CN210571295U - Device for measuring SOA line width enhancement factor of semiconductor optical amplifier - Google Patents

Device for measuring SOA line width enhancement factor of semiconductor optical amplifier Download PDF

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CN210571295U
CN210571295U CN201921111269.1U CN201921111269U CN210571295U CN 210571295 U CN210571295 U CN 210571295U CN 201921111269 U CN201921111269 U CN 201921111269U CN 210571295 U CN210571295 U CN 210571295U
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light
optical amplifier
soa
semiconductor optical
enhancement factor
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吴重庆
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Nanjing Henggao Photoelectric Research Institute Co ltd
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Nanjing Henggao Photoelectric Research Institute Co ltd
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Abstract

The utility model relates to an all-optical signal processing technology field, especially a measure device of semiconductor optical amplifier SOA linewidth enhancement factor, including light source part and optic fibre Fizeau interferometer two parts, the light source part includes first laser instrument and second laser instrument; the signal light emitted by the first laser sequentially passes through the first polarization controller and the first wavelength division multiplexer and enters the tested semiconductor optical amplifier SOA; control light emitted by the second laser sequentially passes through the second polarization controller and the first wavelength division multiplexer after passing through the modulator and simultaneously enters the SOA of the tested semiconductor optical amplifier; light output from the semiconductor optical amplifier SOA enters a second wavelength division multiplexer; and then entering an optical fiber Fizeau interferometer, and calculating the line width enhancement factor of the tested SOA according to the interference result. The utility model discloses simple structure, insensitive to the external world, measurement accuracy is high, in addition, does not do the restriction to signal light, control luminous power and bias current when measuring nonlinear phase shift and linewidth reinforcing factor, and application scope is wider.

Description

Device for measuring SOA line width enhancement factor of semiconductor optical amplifier
Technical Field
The utility model relates to an all-optical signal processing technology field especially relates to a measure device of semiconductor optical amplifier SOA linewidth enhancement factor.
Background
The Semiconductor Optical Amplifier (SOA) has the characteristics of low power consumption, easy integration and obvious nonlinear effect, and is an important basic device in all-optical signal processing. Cross phase modulation (XPM) is one of the optical-optical interactions of semiconductor optical amplifiers, and has been used in optical signal processing devices such as all-optical buffers, all-optical switches, and exclusive-or gates.
The research on the cross-phase modulation in the SOA is mostly focused on the application aspect, the research on the mechanism aspect is less, and the research generally only considers some factors influencing the cross-phase modulation.
The cross-phase modulation of the SOA is a complex physical process, the nonlinear phase shift generated by the modulation is related to signal light, control light and bias current, and therefore, the phase shift generated by the cross-phase modulation of the SOA needs to be measured. The Mach-Zehnder interference is sensitive to the environment, the measurement result is easily influenced by external factors, and the experimental structure of the spectrum analysis method is complex. Therefore, we propose a device for measuring the line width enhancement factor of the SOA of the semiconductor optical amplifier.
SUMMERY OF THE UTILITY MODEL
The utility model aims at solving the shortcomings existing in the prior art, and providing a device for measuring the SOA line width enhancement factor of a semiconductor optical amplifier.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
a device for measuring the line width enhancement factor of a semiconductor optical amplifier SOA is designed, and comprises a light source part, a semiconductor optical amplifier SOA to be measured and an optical fiber Fizeau interferometer;
the light source part comprises a light source for emitting light with a wavelength of λ1A first laser LD1 for emitting signal light and a laser beam with a wavelength of λ2A second laser LD2 that controls light;
λ emitted from the first laser LD11The signal light enters the tested object through the optical fiber via the first polarization controller PC1 and the first wavelength division multiplexer WDM1 in turnA semiconductor optical amplifier SOA;
λ emitted from the second laser LD22After the continuous light is changed into pulse light through the modulator by the optical fiber, the control light sequentially passes through the second polarization controller PC2 and the first wavelength division multiplexer WDM1 to enter the tested semiconductor optical amplifier SOA;
the modulator is connected with a code pattern generator PPG for modulating signals;
said lambda1Signal light and lambda2After being converged by a first wavelength division multiplexer WDW1, control light passes through a tested semiconductor optical amplifier SOA to be output and then passes through a second wavelength division multiplexer WDM2 for filtering, wherein the optical output end of the second wavelength division multiplexer WDM2 is connected with the input end of the optical fiber Fizeau interferometer through an optical fiber;
a circulator for receiving light is arranged in the optical fiber Fizeau interferometer, and the circulator is provided with a first port, a second port and a third port;
the first port is connected with the output end of the second wavelength division multiplexer WDM2 and is used for receiving the light filtered by the second wavelength division multiplexer WDM 2;
one side of the second port of the circulator is sequentially connected with a self-focusing lens with certain partial reflection/partial transmission and a reflector for reflecting light;
one side of the third port of the circulator is connected with a photoelectric detector for detecting interference signals through an optical fiber, and then is connected with a high-speed oscilloscope for recording waveforms and corresponding data.
Preferably, the phase shift caused by the SOA gain G of the tested semiconductor optical amplifier is passed
Figure DEST_PATH_GDA0002394927120000022
Comprises the following steps:
Figure DEST_PATH_GDA0002394927120000021
wherein, betacIs the linewidth enhancement factor of the SOA.
Preferably, when λ2When the light is "0" and "1" respectively,the gains of the SOA of the semiconductor optical amplifier are respectively G1And G2；
Then λ1The phase shift of the light is respectively
Figure DEST_PATH_GDA0002394927120000031
Thus passing through λ2After modulation of the light, λ1Phase change of light
Figure DEST_PATH_GDA0002394927120000032
Comprises the following steps:
Figure DEST_PATH_GDA0002394927120000033
preferably, the surface of the self-focusing lens is a partially reflective surface, a part of light reaching the surface of the lens is reflected, a part of light is transmitted, the reflected light on the surface of the self-focusing lens is primary reflected light, and the transmitted light is reflected after being irradiated on the reflector and then returns to the self-focusing lens again and is secondary reflected light;
let the complex amplitude of the electric field be
Figure DEST_PATH_GDA0002394927120000034
The complex amplitudes of the primary and secondary reflected optical electric fields are:
Figure DEST_PATH_GDA0002394927120000035
wherein A is1＝r1A10，
Figure DEST_PATH_GDA0002394927120000036
r1And t1Reflectivity and transmissivity, r, of the self-focusing lens, respectively2τ is the time delay of the secondary reflected light to the primary reflected light, τ is 2L/c, ω, for the reflectivity of the mirror10Is the angular frequency of the signal light;
setting modulated signal light into said self-focusingAfter the lens, the complex amplitude of the electric field is
Figure DEST_PATH_GDA0002394927120000037
The complex amplitudes of the primary and secondary reflected optical electric fields are:
Figure DEST_PATH_GDA0002394927120000038
wherein A is3＝r1A20，
Figure DEST_PATH_GDA0002394927120000039
Interference due to the primary and secondary reflected light includes: e1And E2、E3And E4、E1And E4、E2And E3Therefore, by using the square detection characteristic of the photoelectric detector, the interference signal intensities of the interference are respectively:
Figure DEST_PATH_GDA00023949271200000310
Figure DEST_PATH_GDA00023949271200000311
Figure DEST_PATH_GDA0002394927120000041
Figure DEST_PATH_GDA0002394927120000042
wherein, P1、P3Respectively representing the intensity of the reflected light, P, of the primary reflected light when unmodulated and when modulated2、P4The reflected light intensity of the secondary reflected light.
Preferably, the distance L between the self-focusing lens and the mirror is adjusted so that ω is0τ ═ pi, then cos (ω)0τ) — 1, thereforeThe above formula for the interference signal intensity can be further written as:
Figure DEST_PATH_GDA0002394927120000043
Figure DEST_PATH_GDA0002394927120000044
Figure DEST_PATH_GDA0002394927120000045
Figure DEST_PATH_GDA0002394927120000046
preferably, the waveform of the fizeau interferometer output is measured using a high speed oscilloscope and 4 quantities P are read therefrom12、P34、P14、P23Obtaining P of primary reflection signal by shielding secondary reflection signal1And P3The value is then calculated back using the above formula
Figure DEST_PATH_GDA0002394927120000047
the line width enhancement factor β can be obtainedc。
The utility model provides a measure device of semiconductor optical amplifier SOA linewidth enhancement factor, beneficial effect lies in:
(1) the utility model discloses experimental system based on optic fibre fizeau interferometer, through SOA's cross phase modulation characteristic, obtained the nonlinear phase shift that signal light, control luminous power and bias current produced to SOA's cross phase modulation
Figure DEST_PATH_GDA0002394927120000049
And obtain
Figure DEST_PATH_GDA0002394927120000048
The phase modulation surface of the time and the line width of the SOA under different conditions are obtainedEnhancing factors and change rules thereof.
(2) Compared with the prior art, the utility model provides an experimental device simple structure influences insensitivity to external environment, and measurement accuracy is high, in addition, is measuring nonlinear phase shift
Figure DEST_PATH_GDA00023949271200000410
and line width enhancement factor βcThe device does not limit signal light, control light power and bias current, has wide application range, and provides a new measuring device for more comprehensively researching the nonlinear characteristic of the SOA.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention, and together with the description serve to explain the invention and not to limit the invention.
In the drawings:
fig. 1 is a schematic structural diagram of the present invention;
FIG. 2 is a waveform diagram of input signal power versus time for an embodiment of the present invention;
FIG. 3 is a waveform diagram of input control power versus time for an embodiment of the present invention;
FIG. 4 is a waveform diagram of signal power versus time for an embodiment of the present invention;
FIG. 5 is a waveform diagram of interference power versus time for an embodiment of the present invention;
fig. 6 is a graph showing the nonlinear phase shift with the variation of the bias current according to different signal optical powers according to the embodiment of the present invention;
fig. 7 is a graph of nonlinear phase shift as a function of bias current for different control optical powers according to an embodiment of the present invention;
fig. 8 is a graph of line width enhancement factor as a function of bias current for an embodiment of the present invention.
Labeled as: the device comprises a 1-first laser LD1, a 2-second laser LD2, a 3-first polarization controller PC3, a 4-second polarization controller PC4, a 5-modulator, a 6-code type generator PPG, a 7-first wavelength division multiplexer WDM1, an 8-semiconductor optical amplifier SOA to be tested, a 9-second wavelength division multiplexer WDM2, a 10-optical fiber Fizeau interferometer, an 11-circulator, a 12-circulator first port, a 13-circulator second port, a 14-circulator third port, a 15-self-focusing lens, a 16-reflector, a 17-photodetector and an 18-high-speed oscilloscope.
Detailed Description
The present invention will be further described with reference to the following specific examples. These examples are provided only for illustrating the present invention and are not intended to limit the scope of the present invention. In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the term "provided" is to be understood in a broad sense, e.g. fixedly, detachably or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The structural features of the present invention will now be described in detail with reference to the accompanying drawings.
Referring to FIG. 1, a first laser LD1(1) emits light having a wavelength λ1The signal light enters a semiconductor optical amplifier SOA (8) after passing through a first polarization controller PC1(3) and a first wavelength division multiplexer WDM (7); and the wavelength emitted by the second laser LD2(2) is λ2The control light is modulated by a modulator (5), a code pattern generator PPG (6) for modulating signals is connected to the modulator (5), and the continuous light is changed into pulse light which then enters a semiconductor optical amplifier SOA (8) through a second polarization controller PC2(4) and a first wavelength division multiplexer WDM1 (7).
Phase shift caused by SOA gain G of semiconductor optical amplifier
Figure DEST_PATH_GDA0002394927120000066
Comprises the following steps:
Figure DEST_PATH_GDA0002394927120000061
wherein, betacIs the line width enhancement factor of SOA; when lambda is2When the light is respectively '0' and '1', the gain of SOA is respectively G1And G2Then λ1The phase shift of the light is respectively
Figure DEST_PATH_GDA0002394927120000062
Thus passing through λ2After modulation of the light, λ1Phase change of light
Figure DEST_PATH_GDA0002394927120000063
Comprises the following steps:
Figure DEST_PATH_GDA0002394927120000064
injecting signal light power P of SOA at bias current IsigAnd controlling the optical power PconUnder different conditions, accurately measure
Figure DEST_PATH_GDA0002394927120000065
The influence of the above factors on the cross-phase modulation can be obtained, and G is further measured according to the above formula1/G2how to obtain the line width enhancement factor β of the SOAc. How to measure is explained below
Figure DEST_PATH_GDA0002394927120000071
The value of (c).
Lambda of above1And λ2The light is output from the SOA and then filtered by a second wavelength division multiplexer WDM2(9) < lambda > lambda1The light is filtered out as signal light, enters a first port (12) of a circulator (11) in the fiber Fizeau interferometer (10), is output from a second port (13), and enters a self-focusing lens (15). The surface of the self-focusing lens (15) is a partially reflective surface, and the light reaching the lens surface is partially reflected and partially transmitted. The reflected light on the surface of the self-focusing lens (15) is a primary reflected light, and the transmitted light is irradiated to the reflecting mirror (1)6) Then reflected again and then returned to the self-focusing lens (15) as secondary reflection light. The primary and secondary reflected light enters the second port (13) of the circulator (11) through the self-focusing lens (15) and is output from the third port (14) into the photodetector (17). Using the square detection characteristic of the photodetector (17), interference signals of the primary reflected light, and the primary and secondary reflected lights are detected and then recorded with a high-speed oscilloscope (18). The modulation phase is obtained by analyzing the recorded waveform and corresponding data.
After the unmodulated signal light enters the self-focusing lens (15), the complex amplitude of an electric field is set to be
Figure DEST_PATH_GDA0002394927120000072
The complex amplitudes of the primary and secondary reflected optical electric fields are:
Figure DEST_PATH_GDA0002394927120000073
in the formula A1＝r1A10，
Figure DEST_PATH_GDA0002394927120000074
r1And t1Reflectivity and transmissivity, r, of the self-focusing lens, respectively2τ is the time delay of the secondary reflected light to the primary reflected light, τ is 2L/c, ω, for the reflectivity of the mirror10Is the angular frequency of the signal light.
Let the complex amplitude of the electric field be
Figure DEST_PATH_GDA0002394927120000077
The complex amplitudes of the primary and secondary reflected optical electric fields are:
Figure DEST_PATH_GDA0002394927120000075
in the formula A3＝r1A20，
Figure DEST_PATH_GDA0002394927120000076
Interference due to the primary and secondary reflected light includes: e1And E2、E3And E4、E1And E4、E2And E3Interference between them. Therefore, by using the square detection characteristic of the photoelectric detector (17), the interference signal intensities of the interference are respectively obtained as follows:
Figure DEST_PATH_GDA0002394927120000081
Figure DEST_PATH_GDA0002394927120000082
Figure DEST_PATH_GDA0002394927120000083
Figure DEST_PATH_GDA0002394927120000084
in the formula P1、P3Respectively representing the intensity of the reflected light, P, of the primary reflected light when unmodulated and when modulated2、P4The reflected light intensity of the secondary reflected light. Adjusting the distance L between the self-focusing lens (15) and the reflector (16) to omega0τ ═ pi, then cos (ω)0τ) — 1, the interference intensity (5) - (8) can be further written as:
Figure DEST_PATH_GDA0002394927120000085
Figure DEST_PATH_GDA0002394927120000086
Figure DEST_PATH_GDA0002394927120000087
Figure DEST_PATH_GDA0002394927120000088
by analyzing the interference waveform and corresponding data recorded by the high-speed oscilloscope (18) through solution, P can be obtained12、 P34、P14And P23By masking the secondary reflection signal and obtaining P of the primary reflection signal1And P3The value, P, can be finally calculated according to the equations (9) - (12)2、P4And
Figure DEST_PATH_GDA0002394927120000089
the value of (c). Additionally use of G1/G2＝P1/P3and the formula (2) can obtain the line width enhancement factor β of the SOAcThe value of (c).
In this embodiment, the first laser LD1(1) outputs continuous light with a wavelength of 1557.9nm, as shown in fig. 2; the second laser LD2(2) first outputs continuous light with a wavelength of 1551.0nm, and then generates a pulse light signal with a repetition frequency of 2GHz and a pulse width of 0.5ns after being modulated by the lithium niobate modulator, as shown in fig. 3; a primary reflected signal of the signal light filtered by the second wavelength division multiplexer WDM2(9), as shown in fig. 4; the high level in the figure indicates the optical power P of the signal light without modulation1The low level represents the optical power P of the signal light modulated by the control light3. The interference signals of the primary and secondary reflected light are shown in FIG. 5, interference signal P12、P34、P14、P23Is labeled in the figures.
Measurement of nonlinear phase shift in this example:
FIG. 6 shows P for injecting SOA control optical powercon1.5mW, signal light power Psig0.3, 0.4, 0.5mW, nonlinear phase shift
Figure DEST_PATH_GDA0002394927120000091
As a function of the SOA bias current I.
FIG. 7 shows Psig＝0.3mW，PconWhen the total weight is 0.5, 1.0 or 1.5mW,
Figure DEST_PATH_GDA0002394927120000092
as a function of I.
As is evident from fig. 6 and 7:
Figure DEST_PATH_GDA0002394927120000093
with PconAnd I increases monotonically with PsigIncrease in size and decrease monotonically.
Comparing the curves in fig. 6 further shows that: with PsigIn the case of the increase in the number of,
Figure DEST_PATH_GDA0002394927120000094
the slope of the curve decreases with I, indicating PsigIs increased so that
Figure DEST_PATH_GDA0002394927120000095
The change in (c) is slowed down.
Also, comparing the curves in fig. 7 can be seen: with PconIn the case of the increase in the number of,
Figure DEST_PATH_GDA0002394927120000096
the slope of the curve with I also increases, indicating that PconIs increased so that
Figure DEST_PATH_GDA0002394927120000097
The change with I is accelerated.
from this figure, it can be seen thatcis varied between 5 and 8, and βcIncreases with increasing I, increases with Psighas been reduced, which is consistent with the results given in the prior art, and the feasibility of the experimental protocol proposed by the present invention has been verifiedcControlling the optical power Pconthe law of change of (i.e. beta)cWith PconIs increased, which is a conclusion not given by the prior art.
The utility model discloses use semiconductor optical amplifier as the object, through the reality based on optic fibre fizeau interferometerThe system is tested, and nonlinear phase shift generated by the cross phase modulation of the SOA by the signal light, the control light power and the bias current is obtained through the cross phase modulation characteristic of the SOA
Figure DEST_PATH_GDA0002394927120000098
The influence, still obtained SOA's line width enhancement factor under the different conditions and change law, verified the utility model discloses a feasibility. Compared with the prior art, the utility model provides an experimental device simple structure, it is insensitive to external environment influence, measurement accuracy is high, in addition, is measuring nonlinear phase shift
Figure DEST_PATH_GDA0002394927120000099
and line width enhancement factor βcThe device does not limit signal light, control light power and bias current, has wide application range, and provides a new measuring device for more comprehensively researching the nonlinear characteristic of the SOA.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described in the foregoing embodiments, or equivalents may be substituted for elements thereof. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (6)

1. A device for measuring the line width enhancement factor of a semiconductor optical amplifier SOA is characterized by comprising a light source part, a tested semiconductor optical amplifier SOA (8) and an optical fiber Fizeau interferometer (10);
the light source part comprises a light source for emitting light with a wavelength of λ1A first laser LD1(1) for emitting signal light and a light source for emitting light with a wavelength of λ2A second laser LD2(2) that controls light;
λ emitted from the first laser LD1(1)1The signal light passes through the first polarization controller PC1(3) and the first polarization controller PC in turn through the optical fiberThe wavelength division multiplexer WDM1(7) enters the tested semiconductor optical amplifier SOA (8);
λ emitted from the second laser LD2(2)2After continuous light is changed into pulse light through an optical fiber by a modulator (5), the control light sequentially passes through a second polarization controller PC2(4) and a first wavelength division multiplexer WDM1(7) and enters a tested semiconductor optical amplifier SOA (8);
the modulator (5) is connected with a code pattern generator PPG for modulating signals;
said lambda1Signal light and lambda2After being converged by a first wavelength division multiplexer WDW1, control light passes through a tested semiconductor optical amplifier SOA (8) to be output and then passes through a second wavelength division multiplexer WDM2(9) for filtering, and the optical output end of the second wavelength division multiplexer WDM2(9) is connected with the input end of the optical fiber Fizeau interferometer (10) through an optical fiber;
a circulator (11) used for receiving light is arranged in the optical fiber Fizeau interferometer (10), and the circulator (11) is provided with a first port (12), a second port (13) and a third port (14);
the first port (12) is connected with the output end of the second wavelength division multiplexer WDM2(9) and is used for receiving the light filtered by the second wavelength division multiplexer WDM2 (9);
one side of the second port (13) of the circulator (11) is sequentially connected with a self-focusing lens (15) with certain partial reflection/partial transmission and a reflector (16) for reflecting light;
one side of a third port (14) of the circulator (11) is connected with a photoelectric detector (17) for detecting interference signals through an optical fiber, and then is connected with a high-speed oscilloscope (18) for recording waveforms and corresponding data.
2. The apparatus for measuring the linewidth enhancement factor of the semiconductor optical amplifier SOA as claimed in claim 1, wherein the phase shift caused by the gain G of the tested semiconductor optical amplifier SOA (8) is passed
Figure DEST_PATH_FDA0002394927110000021
Comprises the following steps:
Figure DEST_PATH_FDA0002394927110000022
wherein, betacIs the linewidth enhancement factor of the SOA.
3. The apparatus for measuring the enhancement factor of the line width of the semiconductor optical amplifier SOA according to claim 1, wherein λ is2When the light is respectively '0' and '1', the gain of the semiconductor optical amplifier SOA (8) is respectively G1And G2；
Then λ1The phase shift of the light is respectively
Figure DEST_PATH_FDA0002394927110000023
Thus passing through λ2After modulation of the light, λ1Phase change of light
Figure DEST_PATH_FDA0002394927110000024
Comprises the following steps:
Figure DEST_PATH_FDA0002394927110000025
4. the device for measuring the line width enhancement factor of the SOA of the semiconductor optical amplifier according to claim 1, wherein the surface of the self-focusing lens (15) is a partially reflecting surface, a part of the light reaching the surface of the lens is reflected and a part of the light is transmitted, the reflected light on the surface of the self-focusing lens (15) is a primary reflected light, and the transmitted light which is irradiated to the reflecting mirror (16) and then reflected and returned to the self-focusing lens (15) is a secondary reflected light;
after the unmodulated signal light enters the self-focusing lens (15), the complex amplitude of an electric field is set to be
Figure DEST_PATH_FDA0002394927110000026
The complex amplitudes of the primary and secondary reflected optical electric fields are:
Figure DEST_PATH_FDA0002394927110000027
wherein A is1＝r1A10，
Figure DEST_PATH_FDA0002394927110000028
r1And t1Respectively, the reflectivity and transmissivity of the self-focusing lens (15), r2Tau is the time delay of the secondary reflection light to the primary reflection light, tau is 2L/c, omega10Is the angular frequency of the signal light;
setting the complex amplitude of the electric field as
Figure DEST_PATH_FDA0002394927110000031
The complex amplitudes of the primary and secondary reflected optical electric fields are:
Figure DEST_PATH_FDA0002394927110000032
wherein A is3＝r1A20，
Figure DEST_PATH_FDA0002394927110000033
Interference due to the primary and secondary reflected light includes: e1And E2、E3And E4、E1And E4、E2And E3Therefore, by using the square detection characteristic of the photoelectric detector (17), the interference signal intensities of the interference are respectively obtained as follows:
Figure DEST_PATH_FDA0002394927110000034
Figure DEST_PATH_FDA0002394927110000035
Figure DEST_PATH_FDA0002394927110000036
Figure DEST_PATH_FDA0002394927110000037
wherein, P1、P3Respectively representing the intensity of the reflected light, P, of the primary reflected light when unmodulated and when modulated2、P4The reflected light intensity of the secondary reflected light.
5. Device for measuring the enhancement factor of the line width of a semiconductor optical amplifier SOA according to claim 4, characterized in that the distance L between the self-focusing lens (15) and the reflector (16) is adjusted to make ω0τ ═ pi, then cos (ω)0τ) — 1, the above equation for the interference signal intensity can be further written as:
Figure DEST_PATH_FDA0002394927110000038
Figure DEST_PATH_FDA0002394927110000039
Figure DEST_PATH_FDA00023949271100000310
Figure DEST_PATH_FDA00023949271100000311
6. an apparatus for measuring a linewidth enhancement factor of a semiconductor optical amplifier SOA according to claim 1, wherein the waveform of the output of the fizeau interferometer is measured using a high speed oscilloscope (18) and 4 quantities P thereof are read12、P34、P14、P23Obtaining P of primary reflection signal by shielding secondary reflection signal1And P3The value is then calculated back using the above formula
Figure DEST_PATH_FDA0002394927110000041
the line width enhancement factor β can be obtainedc。
CN201921111269.1U 2019-07-16 2019-07-16 Device for measuring SOA line width enhancement factor of semiconductor optical amplifier Active CN210571295U (en)

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