CN210490077U

CN210490077U - High-power pulse semiconductor laser

Info

Publication number: CN210490077U
Application number: CN201921639317.4U
Authority: CN
Inventors: 范隆泉; 宋梦芹
Original assignee: Wuhan Gaoyue Technology Co Ltd
Current assignee: Wuhan Gaoyue Technology Co Ltd
Priority date: 2019-09-27
Filing date: 2019-09-27
Publication date: 2020-05-08
Anticipated expiration: 2029-09-27

Abstract

The utility model relates to a high-power pulse semiconductor laser, which comprises a base, wherein the base comprises a plurality of support legs, a cylinder body and a semi-cylinder body, the cylinder body is jointly supported by the plurality of support legs, the semi-cylinder body is fixedly arranged on the upper part of the cylinder body, a transitional heat sink is fixedly arranged on the rectangular side surface of the semi-cylinder body, a normal chip is fixedly arranged on the opposite side surface of the transitional heat sink, a flip chip electrically connected with the normal chip is fixedly arranged on the opposite side surface of the normal chip, the light emitting surface of the normal chip is aligned with the light emitting surface of the flip chip, so that the light emitting positions of the two chips are jointed together, the length of the normal chip is larger than that of the flip chip, or the width of the normal chip is larger than that of the flip chip, a positioning glass sheet is fixedly arranged on the top of the semi-cylinder body, a beam shaping lens is fixedly arranged on the side surface, the purpose of improving the power of the components and remarkably improving the coupling efficiency of the components is achieved.

Description

High-power pulse semiconductor laser

Technical Field

The utility model relates to a laser instrument field, concretely relates to high power pulse semiconductor laser.

Background

A laser is a device capable of emitting laser light, and the types of lasers are increasing nowadays. According to the working medium, the laser can be classified into a gas laser, a solid laser, a semiconductor laser and a dye laser 4. Recently, free electronic lasers have been developed, and high-power lasers are generally pulse output, and most of the lasers currently adopt single-chip lasers regardless of the applied lasers, so that the current situation that the light output power of components is small due to the fact that the power of chips cannot be improved exists, and therefore the existing problems need to be solved urgently.

SUMMERY OF THE UTILITY MODEL

In order to solve the technical problem, an object of the present invention is to provide a high power pulse semiconductor laser, which can improve the light output power and the light spot quality.

In order to achieve the above object, the present invention provides a high power pulse semiconductor laser, including a base, the base includes a plurality of support legs, a column and a semi-column, the column is supported by a plurality of support legs, the semi-column is fixedly disposed on the upper portion of the column, a transition heat sink is fixedly disposed on the rectangular side of the semi-column, a front chip is fixedly disposed on the opposite side of the transition heat sink, a flip chip electrically connected to the front chip is fixedly disposed on the opposite side of the front chip, the P pole of the front chip is attached to the P pole of the flip chip, the length of the front chip is greater than the length of the flip chip, or the width of the front chip is greater than the width of the flip chip, and the light emitting end of the front chip is aligned with the light emitting end of the flip chip;

the top of the semi-cylinder is fixedly provided with a positioning glass sheet, the side surface of the positioning glass sheet is fixedly provided with a beam shaping lens, and the beam shaping lens is positioned above the light-emitting surface of the front chip and the light-emitting surface of the flip chip.

Furthermore, the half column body and the transitional heat sink are fixedly connected in a welding mode, and the medium adopted for welding is AuSn.

Further, the transition heat sink and the front chip are fixedly connected in a welding mode, and the medium used for welding is AuSn.

Further, the upright chip and the flip chip are fixedly connected in a pasting mode, and the medium for pasting is high-thermal-conductivity silver adhesive.

Further, the beam shaping lens and the positioning glass sheet are pasted and fixed by adopting UV glue.

Furthermore, the top of the cylinder is detachably provided with a pipe cap, and the positioning glass sheet, the beam shaping lens, the half cylinder, the face-up chip and the flip chip are all wrapped by the pipe cap.

Furthermore, the positioning glass sheet and the top of the semi-column body are pasted and fixed by UV glue.

Compared with the prior art, the utility model, its beneficial effect is:

the transition heat sink plays roles of padding up and heat conduction, ensures that the forward chip and the flip chip emit light at the circle center of the cylinder and well guides away heat generated by the two chips, the forward chip and the flip chip on the transition heat sink emit light after current is injected, the emitted light is scattered light, a beam shaping lens is required to compress the light emitted by the forward chip and the flip chip at the same time, the light spot quality is improved, and the positioning glass sheet is used for fixing the beam shaping lens;

through using just installing the mode that chip and flip chip piled up and encapsulating, the effectual problem of single-chip components and parts power is not enough leading of having solved, simultaneously, just installing chip and flip chip emergent facula and compressing through beam shaping lens, the facula quality is better, further promotes the coupling efficiency of components and parts.

Drawings

Fig. 1 is a perspective view of the high power pulsed semiconductor laser of the present invention.

In the figure: 1. a base; 11. a support leg; 12. a cylinder; 13. a half cylinder; 2. a transitional heat sink; 3. positively installing a chip; 4. flip chip mounting; 5. positioning the glass sheet; 6. a beam shaping lens; 7. and (4) a pipe cap.

Detailed Description

In order to explain the technical content, structural features, achieved objects and functions of the present invention in detail, the following embodiments are described in detail with reference to the accompanying drawings.

In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element so referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be taken as limiting the scope of the invention.

Referring to fig. 1, the present invention provides an embodiment:

the utility model provides a high-power pulse semiconductor laser for realizing the purpose, which comprises a base 1, the base 1 comprises a plurality of legs 11, a column 12 and a semi-column 13, the column 12 being commonly supported by the plurality of legs 11, the half column 13 is fixedly arranged at the upper part of the column 12, the rectangular side surface of the half column 13 is fixedly provided with a transitional heat sink 2, a positive chip 3 is fixedly arranged on the opposite side surface of the transitional heat sink 2, a flip chip 4 electrically connected with the positive chip 3 is fixedly arranged on the opposite side surface of the positive chip 3, the light-emitting surface of the face-up chip 3 and the light-emitting surface of the face-down chip 4 are aligned with each other, the length of the face-up chip 3 is greater than that of the face-down chip 4, or the width of the face-up chip 3 is larger than that of the flip chip 4, so as to reserve a P-level bonding region;

the top of the semi-cylinder 13 is fixedly provided with a positioning glass sheet 5, the side surface of the positioning glass sheet 5 is fixedly provided with a beam shaping lens 6, and the beam shaping lens 6 is positioned above the light-emitting surface of the front chip 3 and the light-emitting surface of the flip chip 4.

The transitional heat sink 2 plays a role of heightening, so that the heat generated by the forward chip 3 and the flip chip 4 is well conducted away while the forward chip 3 and the flip chip 4 emit light at the circle center of the cylinder 12, the forward chip 3 and the flip chip 4 on the transitional heat sink 2 emit light, the emitted light is scattered light, the light emitted by the forward chip 3 and the flip chip 4 needs to be compressed by the beam shaping lens 6, the spot quality is improved, and the positioning glass sheet 5 is used for fixing the beam shaping lens 6;

the packaging is carried out in a stacking mode of the forward chip 3 and the flip chip 4, the problem that the power of a single-chip component is not enough to conduct is effectively solved, meanwhile, the forward chip 3 and the flip chip 4 are compressed through the beam shaping lens 6, the light spot quality is better, and the coupling efficiency of the component is effectively improved;

further, the half column 13 and the transition heat sink 2 are fixedly connected by welding, and the medium used for welding is AuSn.

Further, the transition heat sink 2 and the front chip 3 are fixedly connected by welding, and the medium used for welding is AuSn.

Further, the face-up chip 3 and the flip chip 4 are fixedly connected by adopting a pasting mode, and the medium adopted by pasting is high-thermal-conductivity silver adhesive.

Further, the beam shaping lens 6 and the positioning glass sheet 5 are stuck and fixed by UV glue.

Further, the cylinder 12 is detachably provided with a cap 7 at the top, and the positioning glass sheet 5, the beam shaping lens 6, the half cylinder 13, the face-up chip 3 and the flip chip 4 are all wrapped by the cap 7.

The installation steps are as follows:

1) with the base as a reference, welding a transition heat sink 2 on the front surface of the semi-cylinder 13 and welding a normal chip 3 on the transition heat sink 2, wherein the welding medium is AuSn;

2) bonding the flip chip 4 by using high-thermal-conductivity silver adhesive in front of the forward chip 3, so that the light-emitting end faces of the P electrodes of the forward chip 3 and the flip chip 4 are bonded to be aligned, and the widths of the P electrodes are aligned;

3) a positioning glass sheet 5 is adhered to the semi-column body 13, and the adhering medium is UV glue;

4) after the assembly is finished, gold wires are bonded and punched, so that the interior of the device is connected into an effective circuit through the gold wires, and the forward chip 3 and the flip chip 4 are connected in parallel;

5) a light beam shaping lens 6 is fixed at the front ends of the light emitting surfaces of the forward chip 3 and the flip chip 4, and UV glue is dispensed to fix the light beam shaping lens and the positioning glass sheet 5, so that the light emitting spot quality of the forward chip 3 and the flip chip 4 is improved;

6) after the above processes are completed, the pipe cap 7 is sealed to form a complete laser assembly.

Claims

1. The utility model provides a high power pulse semiconductor laser, includes base (1), base (1) includes a plurality of stabilizer blades (11), cylinder (12) and half cylinder (13), cylinder (12) are by a plurality of stabilizer blade (11) support jointly, half cylinder (13) are fixed to be set up the upper portion of cylinder (12), its characterized in that: a transitional heat sink (2) is fixedly arranged on the rectangular side face of the semi-cylinder (13), a front-mounted chip (3) is fixedly arranged on the opposite side face of the transitional heat sink (2), a flip chip (4) electrically connected with the front-mounted chip (3) is fixedly arranged on the opposite side face of the front-mounted chip (3), the P pole of the front-mounted chip (3) is attached to the P pole of the flip chip (4), the length of the front-mounted chip (3) is greater than that of the flip chip (4), or the width of the front-mounted chip (3) is greater than that of the flip chip (4), and the light emitting end of the front-mounted chip (3) is aligned with the light emitting end of the flip chip (4);

the light-emitting diode is characterized in that a positioning glass sheet (5) is fixedly arranged at the top of the semi-cylinder body (13), a beam shaping lens (6) is fixedly arranged on the side face of the positioning glass sheet (5), and the beam shaping lens (6) is positioned above the light-emitting face of the front-mounted chip (3) and the light-emitting face of the flip chip (4).

2. A high power pulsed semiconductor laser as claimed in claim 1 wherein: the semi-column (13) and the transition heat sink (2) are fixedly connected in a welding mode, and the medium adopted by welding is AuSn.

3. A high power pulsed semiconductor laser as claimed in claim 1 wherein: the transition heat sink (2) and the front chip (3) are fixedly connected in a welding mode, and the medium adopted by welding is AuSn.

4. A high power pulsed semiconductor laser as claimed in claim 1 wherein: the face-up chip (3) and the flip chip (4) are fixedly connected in a pasting mode, and the medium for pasting is high-thermal-conductivity silver adhesive.

5. A high power pulsed semiconductor laser as claimed in claim 1 wherein: and the beam shaping lens (6) and the positioning glass sheet (5) are adhered and fixed by adopting UV glue.

6. A high power pulsed semiconductor laser as claimed in claim 1 wherein: the top of the cylinder (12) is detachably provided with a pipe cap (7), and the positioning glass sheet (5), the beam shaping lens (6), the semi-cylinder (13), the face-up chip (3) and the flip chip (4) are all wrapped in the pipe cap (7).

7. A high power pulsed semiconductor laser as claimed in claim 1 wherein: and the positioning glass sheet (5) and the top of the half cylinder (13) are adhered and fixed by UV glue.