CN210467888U - Boron nitride packaged two-dimensional organic-inorganic heterojunction - Google Patents
Boron nitride packaged two-dimensional organic-inorganic heterojunction Download PDFInfo
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Abstract
The utility model discloses a two-dimentional organic-inorganic heterojunction of boron nitride encapsulation belongs to two-dimentional semiconductor material field. The packaging structure comprises a substrate, a bottom packaging layer, a two-dimensional nano layer and a top packaging layer. Wherein the substrate is made of a silicon wafer; the bottom packaging layer is made of two-dimensional boron nitride and is arranged on the substrate; the two-dimensional nano layer is a layered heterojunction structure formed by at least two layers of two-dimensional organic materials and/or two-dimensional inorganic materials and is arranged on the bottom packaging layer; the top packaging layer is made of two-dimensional boron nitride and is arranged on the other side of the two-dimensional nano layer. The utility model discloses an adopt boron nitride to replace traditional glass film as the encapsulated layer, not only can play fine encapsulation effect, can completely cut off external water oxygen to two-dimensional material's influence, can increase electron mobility moreover.
Description
Technical Field
The utility model belongs to two-dimentional semiconductor material field, especially a two-dimentional organic-inorganic heterojunction of boron nitride encapsulation.
Background
Two-dimensional semiconductor materials have attracted general attention since the discovery of single-layer graphene in 2004 as a new class of materials. The material is a novel material with the advantages of high mechanical strength, high heat conductivity coefficient, high mobility, ultrathin transparency, flexibility, crimpability and the like. The excellent optical and electrical characteristics of the material make a breakthrough in the fields of photoelectricity, biology, storage, flexibility, integrated circuits and the like.
There are two main methods for preparing the heterojunction: chemical epitaxial growth and physical vapor deposition, among which Molecular Beam Epitaxy (MBE) and Metal Organic Chemical Vapor Deposition (MOCVD) are relatively well known. The high-quality heterostructure prepared by the two methods makes an important contribution to the construction of advanced functional devices such as high-electron-mobility transistors, LEDs, quantum cascade lasers and the like.
However, the heterojunctions constructed by the two technologies depend on one-to-one chemical bonding, and the lattice matching degree of the two materials is extremely high. For the chemical epitaxial growth method, the formation of polycrystal is easily caused by lattice mismatch, and the interface is greatly influenced by strain; for physical vapor deposition, the requirements for material type and lattice matching degree are relatively flexible, but most deposited materials are amorphous or polycrystalline, and the interface is easily interfered by defects or chemical disorder.
Van der Waals heterojunctions are physically assembled together through relatively weak van der Waals interaction forces, do not depend on chemical bonds, are not limited by the lattice matching degree of materials, and bring new eosin for the electronic and optoelectronic device industries. In principle, this van der waals heterojunction integration strategy is applicable to any material, in particular to the flexible integration of materials with different crystal structures, different electronic properties, different dimensions and dimensions, if no special requirements are placed on lattice similarity and processing compatibility.
The covalently bonded atomic layers in a two-dimensional layered material are weakly bonded to each other by van der waals interactions, which provides considerable flexibility for separating, mixing, and matching individual atomic layers without lattice and process compatibility constraints. It can therefore open up a wide range of possibilities for combining multiple materials almost arbitrarily on an atomic scale and integrating different properties, thereby enabling entirely new opportunities not accessible by existing materials.
In the manufacturing, transferring and packaging processes of the two-dimensional organic-inorganic Van der Waals heterojunction at the present stage, dry transferring or wet transferring is mainly used. In the wet transfer process, a chemical assistant is required to be introduced to assist the dissociation of the two-dimensional nano material, the two-dimensional nano material is separated from the surface of the original substrate, a transfer medium is removed, and other chemical reagents are introduced to pollute the interface, so that the quality of the two-dimensional nano material is reduced. While dry transfer requires a Polydimethylsiloxane (PDMS) substrate as a transfer medium and hardly introduces contamination, so the quality of the obtained sample is generally higher than that of wet transfer, but the defects are that the adhesion force is weaker when the (PDMS) substrate is used as the substrate, and the transfer success rate is not high.
SUMMERY OF THE UTILITY MODEL
Utility model purpose: there is provided a boron nitride-encapsulated two-dimensional organic-inorganic heterojunction to solve the above-mentioned problems involved in the background art.
The technical scheme is as follows: a boron nitride encapsulated two-dimensional organic-inorganic heterojunction, comprising: the packaging structure comprises a substrate, a bottom packaging layer, a two-dimensional nano layer and a top packaging layer.
Wherein, the substrate is made of silicon wafers; the bottom packaging layer is made of two-dimensional boron nitride and is arranged on the substrate; the two-dimensional nano layer is a layered heterojunction structure formed by at least two layers of two-dimensional organic materials and/or two-dimensional inorganic materials and is arranged on the bottom packaging layer; and the top packaging layer is made of two-dimensional boron nitride and is arranged on the other side of the two-dimensional nano layer.
The preparation method of the two-dimensional organic-inorganic heterojunction based on the boron nitride package comprises the following steps:
s1, transferring the two-dimensional boron nitride to a silicon wafer substrate to serve as a bottom packaging layer for packaging, and epitaxially growing an organic film on the boron nitride of the bottom packaging layer by using a chemical vapor deposition method;
s2, transferring the two-dimensional boron nitride of the top packaging layer to the surface of the silicon wafer, covering a gold electrode with a hole on the boron nitride, placing an exposed area with the hole of the gold electrode on the two-dimensional layered boron nitride, wherein the area of the two-dimensional boron nitride is larger than that of the square hole, and heating at high temperature;
s3, using a fine needle to take up the gold electrode and the two-dimensional boron nitride of the top packaging layer, and placing the two-dimensional boron nitride on the two-dimensional inorganic material to be transferred;
s4, under an optical microscope, taking a gold electrode, two-dimensional boron nitride of a top packaging layer and a two-dimensional inorganic material by a fine needle, placing the gold electrode, the two-dimensional boron nitride of the top packaging layer and the two-dimensional inorganic material on the boron nitride of a bottom packaging layer on which an organic film grows, aligning the two-dimensional inorganic material and the two-dimensional organic layer through a square hole on the gold electrode, and placing the whole on the boron nitride of the bottom packaging layer on which the organic film grows;
s5, lift off the gold electrode on the two-dimensional boron nitride of the top package with a fine needle.
S6, finally, placing the prepared boron nitride packaged heterojunction in a vacuum device to enable the two-dimensional organic material and/or the two-dimensional inorganic material to be tightly attached.
As a preferable mode, the two-dimensional boron nitride is prepared by a mechanical stripping method or a chemical vapor deposition method.
As a preferable scheme, the organic thin film comprises one or more organic semiconductor materials of semiconductor perylenetetracarboxylic dianhydride, semiconductor perylenediimide, semiconductor dioctylbenzothiophenobenzothiophene and N, N' -dimethyldicarboximide.
As a preferable scheme, the gold electrode is made by adopting an electron beam exposure technology, a hollow small hole is arranged on the gold electrode, and a hollow square small hole with the side length of 20um is arranged on the gold electrode.
Preferably, the gold electrode is covered on the boron nitride and then heated in vacuum at 200-260 ℃.
As a preferred scheme, the two-dimensional material to be transferred is obtained by a mechanical stripping method to obtain a two-dimensional inorganic material on the silicon oxide.
Preferably, the fine needle tip is dipped with a metal glue which is liquid at room temperature and is used as a glue for bonding the gold electrode.
Has the advantages that: the utility model relates to a two-dimentional organic-inorganic heterojunction of boron nitride encapsulation through adopting boron nitride to replace traditional glass film as the encapsulated layer, not only can play fine encapsulation effect, can completely cut off external water oxygen to the influence of two-dimensional material, can increase electron mobility moreover. The liquid metal adhesive is matched with the gold electrode with the hole, so that the adhesion between the gold electrode with the hole and the two-dimensional material is improved, the transfer success rate and accuracy are improved, and the gold electrode with the hole is used as a supporting layer, so that the gold electrode with the hole is convenient to remove in the later period, and quick transfer and accurate alignment can be realized.
Drawings
Fig. 1 is a schematic structural diagram of a boron nitride encapsulated organic-inorganic van der waals heterojunction in accordance with the present invention.
Fig. 2 is a schematic diagram of the present invention with gold electrodes placed on the top encapsulation layer as a support level top encapsulation.
Fig. 3 is a schematic diagram of the present invention transferring a bottom encapsulation layer coated with gold electrodes onto a two-dimensional inorganic material.
Fig. 4 is a schematic diagram of the present invention transferring a two-dimensional inorganic material layer and a top encapsulation layer onto a two-dimensional organic material and a bottom encapsulation layer.
The reference signs are: the device comprises a substrate 1, a bottom packaging layer 2, a two-dimensional organic material 3, a two-dimensional inorganic material 4, a top packaging layer 5, a gold electrode 6 and a fine needle 7.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the present invention.
As shown in fig. 1, a boron nitride encapsulated two-dimensional organic-inorganic heterojunction, comprising: the packaging structure comprises a substrate 1, a bottom packaging layer 2, a two-dimensional nano layer and a top packaging layer 5. Wherein, the substrate 1 is made of silicon wafer; a bottom encapsulation layer 2 made of two-dimensional boron nitride and arranged on the substrate 1; a two-dimensional nano-layer, which is a layered heterojunction structure formed by at least two layers of two-dimensional organic materials 3 and/or two-dimensional inorganic materials 4 and is arranged on the bottom packaging layer 2; and the top packaging layer 5 is made of two-dimensional boron nitride and is arranged on the other side of the two-dimensional nano layer. More specifically, the thickness of the bottom packaging layer and the thickness of the bottom packaging layer are 40-50 nm, and the thickness of the two-dimensional nano layer is 4-10 nm; wherein the thickness ratio between the two-dimensional organic material and the two-dimensional inorganic material is 1: (1-2). The two-dimensional nano layer is connected with the top packaging layer and the top packaging layer through liquid metal glue, preferably indium gallium alloy is used as glue for bonding the gold electrode 6, the thickness of the glue is 10-20 nm, and the glue has stronger bonding force compared with the bonding force between atomic layers.
Since hexagonal boron nitride is an insulating layered two-dimensional material, it possesses a highly similar crystal structure to graphene. Therefore, the hexagonal boron nitride is directly used for encapsulation in the preparation process of the two-dimensional organic-inorganic heterojunction, so as to further enhance the optical and electrical properties of the heterojunction. This structure gives him extremely high temperature stability and a smooth surface at the atomic level. And the surface of the hexagonal boron nitride has few dangling bonds and charge traps, so that a uniform dielectric environment is provided for the two-dimensional material. The scattering or the capture of a photon-generated carrier by impurity defects is effectively reduced, so that the material has an ultra-long carrier migration distance, a long carrier life and a high carrier mobility, and the optical and electrical properties of the material are improved. Therefore, compared with the traditional packaging process of the glass film, the hexagonal boron nitride has a good packaging effect, can isolate the influence of external water and oxygen on the two-dimensional material, and increases the electron mobility. As a preferable mode, the two-dimensional boron nitride is prepared by a mechanical stripping method or a chemical vapor deposition method.
Wherein the two-dimensional nanolayer is a layered heterojunction structure formed by at least two layers of two-dimensional organic materials 3 and/or two-dimensional inorganic materials 4. The functional semiconductor material determining the application of the semiconductor sensor may be, but is not limited to, a photosensitive material, a temperature sensitive material, and a pressure sensitive material for a solar cell, and the two-dimensional organic material 3 and the two-dimensional inorganic material 4 are conventionally known materials, and thus are not particularly limited herein. In specific implementation, the two-dimensional organic material 3 includes, but is not limited to, organic semiconductor materials such as semiconductor perylenetetracarboxylic dianhydride (PTCDA), semiconductor Perylenediimide (PTCDI), semiconductor dioctylbenzothiophenobenzothiophene (C8-BTBT), N' -dimethyldicarboximide (MEPTCDI), and the like. The inorganic material includes, but is not limited to, cadmium sulfide, tin sulfide, silver sulfide, antimony sulfide, lead sulfide, zinc sulfide, indium sulfide, cadmium selenide, tin selenide, silver selenide, antimony selenide, lead selenide, zinc selenide, indium selenide and other inorganic semiconductor materials, and may also be an inorganic semiconductor material composed of sulfides or selenides of metal elements in the third main group, the fourth main group and the fifth main group. Taking a photosensitive material for a solar cell as an example, C8-BTBT of a two-dimensional organic material 3 is preferably used as a hole transport layer for collecting electron-hole pairs and realizing the transport of electrons, and two-dimensional silver selenide is preferably used as a photosensitive material and realizing the absorption of light energy.
The invention will be further described with reference to the following examples, which are intended to illustrate the invention and are not to be construed as limiting the invention.
Example 1
A preparation method of the two-dimensional organic-inorganic heterojunction based on the boron nitride package comprises the following process steps:
and S1, transferring the two-dimensional boron nitride to the silicon wafer substrate 1 for bottom packaging. The method for mechanically stripping and transferring the two-dimensional boron nitride comprises the following steps: and placing the hexagonal boron nitride of the block material on the sticky surface of the adhesive tape, repeatedly tearing the adhesive tape with other adhesive tapes to ensure that the boron nitride is thinned to a preset thickness, and finally, adhering the adhesive tape with the hexagonal boron nitride to the surface of the silicon dioxide, slightly pressing the adhesive tape and removing the adhesive tape, thereby obtaining the two-dimensional boron nitride on the silicon wafer.
S2, epitaxially growing an organic thin film on the boron nitride by Chemical Vapor Deposition (CVD). And (3) placing the two-dimensional boron nitride as the bottom package in a CVD (chemical vapor deposition) tube furnace for growing, so that an organic film is uniformly grown on the two-dimensional boron nitride. The CVD growth method comprises the following steps: 1. respectively placing a growth source (C8-BTBT is selected as a growth source in the embodiment) of a two-dimensional organic material 3 and a hexagonal boron nitride substrate in a CVD tube furnace at intervals; 2. introducing argon, and heating for 3 hours at 200-260 ℃; 3. naturally cooling to obtain the layered organic material grown on the boron nitride.
And S3, transferring the two-dimensional boron nitride of the top packaging layer to the surface of the silicon chip, and covering the boron nitride of the top packaging layer 5 with a gold electrode 6 with a hole. Under the assistance of an optical microscope, a gold electrode 6 with a hole is covered on the boron nitride as the top package (and the area of the two-dimensional boron nitride is larger than that of the square hole, and high-temperature heating is carried out), and the gold electrode 6 is covered on the boron nitride and then heated for 45min at the temperature of 200-260 ℃ in vacuum. The method comprises the following specific steps of adhering a gold electrode 6 with holes by using a metal needle as shown in fig. 2, wherein the gold electrode 6 is provided with a hollow small hole, the length and the width of the small hole are respectively 20um, and the gold electrode is prepared by using an electron beam exposure method. The electron beam exposure method comprises the following specific steps: coating a bottom layer electron beam resist on the two-dimensional boron nitride, and covering a metal layer, preferably gold, on the bottom layer electron beam resist, wherein the gold is softer, so that the later-stage further processing is facilitated; coating a layer of top electron beam resist on the non-etching area of the metal layer; the temperature resistance of the electron beam resist is higher than the electron beam exposure temperature, and then electron beam exposure is performed to form a gold electrode 6 with holes. Or on other processing materials after being prepared by using an electron beam exposure method and then transferred to the two-dimensional boron nitride.
S4, taking the gold electrode 6 covered with the hole and the two-dimensional boron nitride by the fine needle 7 under the assistance of the optical microscope, and placing the material on the two-dimensional inorganic material 4 to be transferred; the needle tip of the fine needle 7 is dipped with metal glue which is liquid at room temperature and is used as glue for bonding the gold electrode 6, in the embodiment, indium gallium alloy is selected as the glue for bonding the gold electrode 6, and silver selenide is selected as the two-dimensional inorganic material 4. The specific steps are as shown in fig. 2, wherein the two-dimensional organic material 3 to be transferred is mechanically stripped to obtain the two-dimensional inorganic material 4 on the silicon oxide. The specific mechanical stripping process is the same as step S1.
And S5, taking up the gold electrode 6, the boron nitride of the top packaging layer and the two-dimensional inorganic material 4 by the fine needle 7, aligning the two-dimensional inorganic material and the two-dimensional organic layer through the square hole on the gold electrode, and placing the whole on the boron nitride of the bottom packaging layer on which the organic film grows. The specific steps are shown in fig. 3.
S6, operating under an optical microscope by using the fine needle 7, and lifting off the gold electrode 6 with the hole; and finally, placing the prepared boron nitride packaged heterojunction in a vacuum device to enable the two-dimensional organic material 3 and/or the two-dimensional inorganic material 4 to be tightly attached.
When the organic-inorganic van der waals heterojunction is encapsulated by boron nitride, the battery conversion efficiency of the organic-inorganic van der waals heterojunction before encapsulation is 1.06%, the battery conversion efficiency after encapsulation is 1.18%, and the battery after encapsulation is 1.09% after being placed in an atmospheric environment for 1000 hours. And the carrier mobility can reach 53.14cm after the organic-inorganic Van der Waals heterojunction is packaged2V.s. On the other hand, the average time taken during the transfer process is about 2 min.
Example 2
A preparation method of the two-dimensional organic-inorganic heterojunction based on the boron nitride package comprises the following process steps:
and S1, transferring the two-dimensional layered material of the glass film to the silicon wafer substrate 1 for bottom packaging. The methods of peeling and transferring were the same as in example 1.
And S2, epitaxially growing an organic film on the glass film by using a Chemical Vapor Deposition (CVD) method, and putting the glass film serving as the bottom package into a CVD tube furnace for growing so that a layer of organic film is uniformly grown on the glass film. The CVD growth method was the same as in example 1.
And S3, covering a gold electrode 6 with a hole on the glass film of the top packaging layer 5. Under the assistance of an optical microscope, a glass film used as a top package is covered with a gold electrode 6 with a hole, and the gold electrode 6 is covered on the glass film and then heated for 45min at the temperature of 200-260 ℃ in vacuum. The specific procedure is as in example 1.
S4, under the assistance of an optical microscope, taking the gold electrode 6 covered with a holed gold electrode and a glass film material with a fine needle 7 (the needle tip of the fine needle 7 is dipped with a metal glue which is liquid at room temperature and is used as a glue for bonding the gold electrode 6, in this embodiment, indium gallium alloy is selected), and placing the material on the two-dimensional inorganic material 4 to be transferred; the specific steps are shown in fig. 2. Wherein, the two-dimensional organic material 3 to be transferred obtains the two-dimensional inorganic material 4 on the silicon oxide by a mechanical stripping method. The specific process is the same as step S1 in example 1.
S5, taking up the gold electrode 6, the glass film and the two-dimensional inorganic material 4 by the fine needle 7, aligning the two-dimensional inorganic material and the two-dimensional organic layer through the square hole on the gold electrode, and placing the whole on the glass film on which the organic film grows; the specific steps are shown in fig. 3.
S6, operating under an optical microscope by using the fine needle 7, and lifting off the gold electrode 6 with the hole; and finally, placing the prepared heterojunction packaged by the glass film in a vacuum device to enable the two-dimensional organic material 3 and/or the two-dimensional inorganic material 4 to be tightly attached.
When the organic-inorganic van der Waals heterojunction is packaged by the glass film, the battery conversion efficiency of the organic-inorganic van der Waals heterojunction before packaging is 1.06%, the battery conversion efficiency after packaging is 0.88%, and the battery after packaging is placed in an atmospheric environment for 1000 hoursAfter time, the efficiency was 0.74%. And the carrier mobility can reach 42.25cm after the organic-inorganic Van der Waals heterojunction is packaged2V.s. On the other hand, the average time taken during the transfer process is about 2 min.
Example 3
A preparation method of the two-dimensional organic-inorganic heterojunction based on the boron nitride package comprises the following process steps:
and S1, transferring the two-dimensional layered material of the glass film to the surface of a silicon wafer to be used as the substrate 1 and bottom packaging. The method of peeling and transferring is referred to example 1.
S2, uniformly spin-coating a layer of polymethyl methacrylate on the silicon wafer substrate 1 at a high speed to serve as a release agent, baking for 5min at 250 ℃ to remove the solvent, taking up the glass film material by using a capillary, and placing the glass film on the silicon wafer substrate 1.
And S3, epitaxially growing an organic film on the glass film by using a Chemical Vapor Deposition (CVD) method, and putting the glass film serving as the bottom package into a CVD tube furnace for growing so that a layer of organic film is uniformly grown on the glass film. The CVD growth method was the same as in example 1.
S4, the two-dimensional inorganic material 4 to be transferred is thereby brought by the capillary band, and the glass film is placed on the organic film, likewise with the aid of an optical microscope.
S5, finally, placing the prepared glass film packaged heterojunction in a vacuum device to enable the two-dimensional organic material 3 and/or the two-dimensional inorganic material 4 to be tightly attached.
When the organic-inorganic van der waals heterojunction is packaged by using the glass film, the battery conversion efficiency of the organic-inorganic van der waals heterojunction before packaging is 1.06%, the battery conversion efficiency after packaging is 0.90%, and the battery after packaging is 0.74% after being placed in an atmospheric environment for 1000 hours. And the carrier mobility can reach 40.98cm after the organic-inorganic Van der Waals heterojunction is packaged2V.s. On the other hand, the average time consumed in the transfer process is about 10min, which is far longer than the time consumed in the transfer process by adopting a gold electrode.
Contrast embodiment 1 ~ 3 adopts boron nitride to replace traditional glass film as the encapsulation layer, not only can play fine encapsulation effect, can completely cut off external water oxygen to the influence of two-dimensional material, can increase electron mobility moreover. In addition, the gold electrode is a flexible and mechanically strong support material with a thickness of about 100 nm. The thin two-dimensional boron nitride is transparent when no substrate is available, and the thin two-dimensional boron nitride can be clearly seen to be transferred to a target substrate by utilizing the square hole. And the thin two-dimensional boron nitride is used as a supporting layer to have less refraction to light, so that the alignment is more convenient. The liquid metal adhesive is matched with the gold electrode 6 with the hole, so that the adhesion force between the metal adhesive and the two-dimensional material is increased, and the transfer success rate is greatly improved. The force between the gold electrode and the two-dimensional material is relatively weak, so that the gold electrode can be separated without damage, has no residue, and is convenient to remove at the later stage.
It should be noted that the various features described in the above embodiments may be combined in any suitable manner without departing from the scope of the invention. In order to avoid unnecessary repetition, the present invention does not separately describe various possible combinations.
Claims (8)
1. A boron nitride encapsulated two-dimensional organic-inorganic heterojunction, comprising:
a substrate made of a silicon wafer;
the bottom packaging layer is made of two-dimensional boron nitride and is arranged on the substrate;
the two-dimensional nano layer is a layered heterojunction structure formed by at least two layers of two-dimensional organic materials and/or two-dimensional inorganic materials and is arranged on the bottom packaging layer;
and the top packaging layer is made of two-dimensional boron nitride and is arranged on the other side of the two-dimensional nano layer.
2. The boron nitride encapsulated two-dimensional organic-inorganic heterojunction as claimed in claim 1 wherein said two-dimensional boron nitride is layered hexagonal boron nitride.
3. The boron nitride encapsulated two-dimensional organic-inorganic heterojunction as claimed in claim 1 wherein the thickness of the bottom encapsulation layer and the bottom encapsulation layer is 40 to 50nm, and the thickness of the two-dimensional nanolayer is 4 to 10 nm; wherein the thickness ratio between the two-dimensional organic material and the two-dimensional inorganic material is 1: (1-2).
4. The boron nitride encapsulated two-dimensional organic-inorganic heterojunction as claimed in claim 1, wherein said two-dimensional organic material is one of semiconductor perylenetetracarboxylic dianhydride, semiconductor perylenediimide, semiconductor dioctylbenzothiophenobenzothiophene, N' -dimethyldicarboximide.
5. The boron nitride encapsulated two-dimensional organic-inorganic heterojunction as claimed in claim 1, wherein said two-dimensional inorganic material is an inorganic semiconductor material composed of sulfide or selenide of a metal element in the third main group, the fourth main group, the fifth main group.
6. The boron nitride encapsulated two-dimensional organic-inorganic heterojunction as claimed in claim 4, wherein said two-dimensional inorganic material is an inorganic semiconductor material selected from cadmium sulfide, tin sulfide, silver sulfide, antimony sulfide, lead sulfide, zinc sulfide, indium sulfide, cadmium selenide, tin selenide, silver selenide, antimony selenide, lead selenide, zinc selenide, and indium selenide.
7. The boron nitride encapsulated two-dimensional organic-inorganic heterojunction as claimed in claim 1, wherein the two-dimensional nanolayer is connected with the top encapsulation layer and the top encapsulation layer through liquid metal glue.
8. The boron nitride encapsulated two-dimensional organic-inorganic heterojunction as claimed in claim 7 wherein said metal glue is an indium gallium alloy.
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