CN210420255U - Crystal growing device - Google Patents
Crystal growing device Download PDFInfo
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- CN210420255U CN210420255U CN201921488642.5U CN201921488642U CN210420255U CN 210420255 U CN210420255 U CN 210420255U CN 201921488642 U CN201921488642 U CN 201921488642U CN 210420255 U CN210420255 U CN 210420255U
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Abstract
The utility model provides a crystal growth device relates to crystal cultivation equipment technical field, including last heat preservation section of thick bamboo and lower heat preservation section of thick bamboo, lower heat preservation section of thick bamboo is used for the holding crucible, goes up the growth space that a heat preservation section of thick bamboo is used for forming the crystal, and crystal growth device still includes: a first heating device and a second heating device; the first heating device is arranged on the lower heat-preserving cylinder and used for heating a crucible placed in the lower heat-preserving cylinder so as to heat raw materials in the crucible; the second heating device is arranged in the upper heat-preserving cylinder and used for heating the crystal. The temperature through first heating device control raw materials, the temperature through second heating device control crystal to each growth stage that can satisfy lutetium aluminium garnet series crystal is to the requirement of the different temperature gradient between crystal and the fuse-element, makes the utility model provides a lutetium aluminium garnet series crystal can be produced to the crystal growth device.
Description
Technical Field
The utility model belongs to the technical field of crystal cultivation equipment technique and specifically relates to a crystal growth device is related to.
Background
A crystal growing apparatus is an apparatus for producing crystals. At present, a crystal growing device is generally used for producing common Yttrium Aluminum Garnet (YAG) series crystals, the crystal growing device generally comprises a tray, a lower heat-preserving cylinder, a crucible, an upper heat-preserving cylinder, a furnace body, a rotary lifting mechanism, a seed crystal rod, a seed crystal and an inductance coil, the lower heat-preserving cylinder is arranged on the tray, the upper heat-preserving cylinder is arranged on the lower heat-preserving cylinder, the crucible is arranged in the lower heat-preserving cylinder, the inductance coil is sleeved outside the lower heat-preserving cylinder, the rotary lifting mechanism is connected with one end of the seed crystal rod, the other end of the seed crystal rod is connected with the seed crystal, the seed crystal is arranged in the upper heat-preserving cylinder in a penetrating manner, and the furnace body is sleeved.
When the crystal is cultured, the raw material for growing the crystal is filled into the crucible, the inductance coil is connected with the power supply, the crucible is heated, the lower heat-preserving cylinder has the heat-preserving effect on the crucible at the moment, the heat-preserving cylinder upwards transfers heat quantity, the crucible also can directly upwards radiate heat quantity, the upper heat-preserving cylinder also has certain temperature, the raw material in the crucible is heated and melted into a melt, the seed crystal is controlled to descend into the melt through the rotary lifting mechanism, then the seed crystal is slowly lifted upwards through the rotary lifting mechanism, the crystal starts to grow on the seed crystal at the moment, and the crystal is located in the upper heat-preserving cylinder.
When a crystal growing device is adopted to produce lutetium aluminum garnet (LuAG) series crystals with high melting point and large density, the crystal growth is divided into several stages of seeding, shouldering, equal-diameter growth and ending, when the lutetium aluminum garnet series crystals are produced, the shouldering stage needs a larger temperature gradient between the crystals and a melt, the equal-diameter growth stage needs a smaller temperature gradient between the crystals and the melt, and the ending stage needs a larger temperature gradient between the crystals and the melt, however, when the crystal growing device in the prior art is adopted to culture the lutetium aluminum garnet series crystals with high melting point and large density, because the upper heat-preserving cylinder transfers heat upwards through the lower heat-preserving cylinder to obtain heat energy, namely the temperature of the upper heat-preserving cylinder is synchronously increased or synchronously decreased with the temperature of the lower heat-preserving cylinder, the existing crystal growing device can not meet the requirements of different temperature gradients between the crystals and the melt in each growth stage of the lutetium aluminum garnet series crystals, so that the lutetium aluminium garnet series crystal can not be produced by the existing crystal growth device.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a crystal growth device to solve the technical problem that the crystal growth device among the prior art can't produce lutetium aluminium garnet series crystal.
The utility model provides a crystal growth device, including last heat preservation section of thick bamboo and lower heat preservation section of thick bamboo, a heat preservation section of thick bamboo is used for the holding crucible down, it is used for forming the growth space of crystal to go up the heat preservation section of thick bamboo, crystal growth device still includes: a first heating device and a second heating device;
the first heating device is arranged on the lower heat-insulating cylinder and used for heating a crucible placed in the lower heat-insulating cylinder so as to heat raw materials in the crucible;
the second heating device is arranged in the upper heat-preserving cylinder and is used for heating the crystal.
Further, the first heating device is an inductance coil which is sleeved outside the lower heat-insulating cylinder;
the crystal growth device also comprises a crucible which is an iridium crucible.
Furthermore, the crystal growth device also comprises a furnace body, and the lower heat-insulating cylinder and the upper heat-insulating cylinder are both positioned in the furnace body;
and a low-resistance metal cylinder is arranged between the first heating device and the furnace body and sleeved outside the first heating device.
Further, the second heating device is a resistance heater.
Further, the second heating device is cylindrical;
the bottom of going up a heat preservation section of thick bamboo is provided with the brace table, the brace table with go up the inner wall connection of heat preservation section of thick bamboo, second heating device install in on the brace table.
Further, the crystal growing device also comprises a rotary lifting mechanism and a seed rod;
the rotary lifting mechanism is connected with one end of the seed rod, and the other end of the seed rod is used for fixing seed crystals;
the seed rod is used for enabling the seed crystal to penetrate through the second heating device, and the rotary lifting mechanism is connected with the furnace body.
Further, the wall thickness of the upper heat-insulating cylinder is larger than that of the lower heat-insulating cylinder.
Further, a heat insulation brick layer is arranged between the lower heat insulation cylinder and the crucible.
Further, the crystal growth device also comprises a backing plate;
the bottom of the lower heat-insulating cylinder is provided with a tray, and the base plate is arranged between the tray and the crucible.
Further, the backing plate is made of heat-insulating materials.
The utility model provides a crystal growth device is when producing lutetium aluminium garnet series crystal, and first heating device is used for heating the crucible to raw materials to in the crucible heats, and second heating device is used for heating the crystal that is located the heat preservation section of thick bamboo, consequently, through the temperature of first heating device control raw materials, through the temperature of second heating device control crystal, thereby can satisfy each growth phase requirement to the different temperature gradient between crystal and the fuse-element of lutetium aluminium garnet series crystal, make the utility model provides a crystal growth device can produce lutetium aluminium garnet series crystal.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the technical solutions in the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a cross-sectional view of a crystal growing apparatus according to an embodiment of the present invention;
FIG. 2 is a cross-sectional view of a crystal growing apparatus according to another embodiment of the present invention;
FIG. 3 is a cross-sectional view of a crystal growing apparatus according to yet another embodiment of the present invention;
fig. 4 is a cross-sectional view of a crystal growth apparatus according to still another embodiment of the present invention.
Icon: 1-a tray; 11-a backing plate; 2-lower heat preservation cylinder; 21-a first heating device; 22-insulating brick layer; 3, mounting a heat preservation cylinder; 31-a viewing port; 4-a crucible; 5-a second heating device; 6-furnace body; 7-a rotary lifting mechanism; 71-seed rods; 72-seed crystal; 8-low resistance metal cylinder.
Detailed Description
The technical solution of the present invention will be described clearly and completely with reference to the following embodiments, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Fig. 1 is a cross-sectional view of a crystal growth apparatus according to an embodiment of the present invention.
As shown in fig. 1, the crystal growth apparatus provided in this embodiment includes an upper heat-preserving cylinder 3 and a lower heat-preserving cylinder 2, the lower heat-preserving cylinder 2 is used for accommodating a crucible 4, the upper heat-preserving cylinder 3 is used for forming a growth space of a crystal, and the crystal growth apparatus further includes: a first heating device 21 and a second heating device 5; the first heating device 21 is arranged on the lower heat-preserving cylinder 2, and the first heating device 21 is used for heating the crucible 4 placed in the lower heat-preserving cylinder 2 so as to heat the raw material in the crucible 4; the second heating device 5 is arranged in the upper heat-preserving cylinder 3, and the second heating device 5 is used for heating the crystal.
The second heating means 5 may be a resistance heater.
Go up a heat preservation section of thick bamboo 3 and a lower heat preservation section of thick bamboo 2 and make through insulation material respectively, for example, it forms to pile up through insulating brick to when first heating device 21 heats crucible 4, second heating device 5 heats the crystal, lower heat preservation section of thick bamboo 2 and last heat preservation section of thick bamboo 3 can keep warm to the raw materials in crucible 4 and the crystal in last heat preservation section of thick bamboo 3 respectively, reduce the heat and scatter and disappear.
Preferably, the upper heat-insulating cylinder 3 and the lower heat-insulating cylinder 2 are respectively formed by stacking zirconia heat-insulating bricks.
In the crystal growth device provided by the embodiment, when the lutetium aluminum garnet series crystal is produced, the first heating device 21 is used for heating the crucible 4, to heat the raw material in the crucible 4, the second heating device 5 is used for heating the crystal in the upper heat-preserving cylinder 3, therefore, the temperature of the raw material is controlled by the first heating means 21, the temperature of the crystal is controlled by the second heating means 5, so that the temperatures of the melt and the crystal are controlled by the first heating means 21 and the second heating means 5 respectively, thereby controlling the temperature gradient between the melt and the crystal by controlling the first heating means 21 and the second heating means 5, thereby meeting the requirements of each growth stage of the lutetium aluminum garnet series crystal on different temperature gradients between the crystal and the melt, so that the crystal growth device provided by the embodiment can produce lutetium aluminum garnet series crystals.
When the temperature gradient between the melt and the crystal needs to be controlled to be large during the production of the lutetium aluminum garnet series crystal, the first heating device 21 is controlled to heat the crucible 4 at a high temperature, the second heating device 5 stops heating the crystal or heats the crystal at a low temperature, and the temperature difference between the lower heat-preserving cylinder 2 and the upper heat-preserving cylinder 3 meets the growth conditions of the lutetium aluminum garnet series crystal.
Further, in order to make the first heating device 21 heat the crucible 4 better, and thus heat the raw material in the crucible 4 better, in the crystal growth device provided in this embodiment, as shown in fig. 1, the first heating device 21 is an inductance coil, and the inductance coil is sleeved outside the lower heat-preserving cylinder 2; the crystal growth apparatus further includes a crucible 4, and the crucible 4 is an iridium crucible.
An inductor is a device that operates using the principle of electromagnetic induction. When current flows through a wire, a certain electromagnetic field is generated around the wire, and the wire of the electromagnetic field induces the wire in the range of the electromagnetic field. The action on the wire itself generating the electromagnetic field is called self-induction, namely, the changing current generated by the wire itself generates a changing magnetic field, and the magnetic field further influences the current in the wire; the effect on other conductors in this electromagnetic field range is called "mutual inductance".
The crucible 4 may be a metal crucible 4, so that after the induction coil is energized, the crucible 4 can be heated, thereby heating the raw material in the crucible 4 and melting the raw material into a melt.
Preferably, the crucible 4 is made of iridium material, the crucible 4 made of iridium material has metal characteristics, and can be heated under the action of the induction coil, and the iridium material is used for producing crystals, so that the crystals are not polluted, and the purity of the produced crystals is higher.
The inductance coil is sleeved outside the lower heat-insulating cylinder 2, so that the iridium crucible can be heated more uniformly, and the raw materials can be heated more uniformly.
Fig. 4 is a cross-sectional view of a crystal growth apparatus according to still another embodiment of the present invention.
Further, in order to save more electricity during the operation of the crystal growth apparatus and save the cost for producing crystals, in the crystal growth apparatus provided in this embodiment, as shown in fig. 4, the crystal growth apparatus further includes a furnace body 6, and both the lower heat-preserving cylinder 2 and the upper heat-preserving cylinder 3 are located in the furnace body 6; a low resistance metal cylinder 8 is arranged between the first heating device 21 and the furnace body 6, and the low resistance metal cylinder 8 is sleeved outside the first heating device 21.
In the prior art, when the first heating device 21 is energized, not only the iridium crucible but also the furnace body 6 is heated.
The furnace body 6 is generally made of stainless steel material.
The low-resistance metal cylinder 8 may have a cylindrical structure made of a copper material. Copper metal has a resistivity of 1.75 x 10-8Ohm.m, resistivity of stainless steel 7.3 x 10-7Ohm-meter.
Through setting up low resistance metal cylinder 8 between first heating device 21 and furnace body 6, low resistance metal cylinder 8 separates furnace body 6 and first heating device 21, therefore, when first heating device 21 circular telegram, low resistance metal cylinder 8 heats, and furnace body 6 can not heat, because the resistivity of low resistance metal cylinder 8 is lower a lot with the resistivity of furnace body 6 again, consequently, can save the electric energy of crystal growth device during operation greatly to save the cost of crystal growth device production crystal.
Further, in order to enable the second heating device 5 to heat the crystal in the upper heat-preserving cylinder 3 smoothly, in the crystal growth device provided by the present embodiment, as shown in fig. 1, the second heating device 5 is a resistance heater.
The resistance heating is a method for electrically heating materials by using the heat effect of current passing through a resistor body.
The second heating device 5 is arranged in the upper heat-insulating cylinder 3, so that the temperature of the crystal in the upper heat-insulating cylinder 3 is stably controlled.
Further, in order to make the second heating device 5 stably heat the crystal in the upper heat-preserving cylinder 3, and the second heating device 5 does not affect the space required for crystal growth, in the crystal growth device provided in this embodiment, as shown in fig. 1, the second heating device 5 is in a cylindrical shape; the bottom of the upper heat-insulating cylinder 3 is provided with a supporting table, the supporting table is connected with the inner wall of the upper heat-insulating cylinder 3, and the second heating device 5 is installed on the supporting table.
Design into the tube-shape with second heating device 5, and the bottom of going up heat preservation section of thick bamboo 3 sets up a round brace table along the inner wall of last heat preservation section of thick bamboo 3, install the second heating device 5 of tube-shape on brace table, make the outer wall of second heating device 5 and the inner wall butt of last heat preservation section of thick bamboo 3, thereby make the space in heat preservation section of thick bamboo 3 that occupies that second heating device 5 is as few as possible, make the crystal grow in second heating device 5's barrel, second heating device 5 can be more even to the heating of crystal, and can not influence the space that crystal growth needs.
Further, in order to enable the crystal growth apparatus to produce crystals better by the czochralski method, in the crystal growth apparatus provided in this embodiment, as shown in fig. 1, the crystal growth apparatus further includes a rotary lifting mechanism 7 and a seed rod 71; the rotary lifting mechanism 7 is connected with one end of a seed rod 71, and the other end of the seed rod 71 is used for fixing a seed crystal 72; the seed rod 71 is used for inserting a seed crystal 72 into the second heating device 5, and the rotary lifting mechanism 7 is connected with the furnace body 6.
The rotary lifting mechanism 7 is fixedly connected with the furnace body 6.
The rotary lifting mechanism 7 comprises a lifting device and a motor, an output shaft of the motor is connected with the seed rod 71, and the lifting device is connected with the motor.
The lifting device can be an electric push rod, a pneumatic cylinder or a hydraulic cylinder.
When the seed crystal 72 is inserted into the second heating device 5, the seed crystal 72 is located on the axial line of the cylindrical second heating device 5, so that the crystal grows more uniformly on the seed crystal 72.
When producing a crystal, first, the crucible 4 is heated by energizing the first heating device 21 to melt the raw material in the crucible 4 into a melt; then, controlling the rotary lifting mechanism 7 to drive the seed rod 71 to descend, so that the seed crystal 72 enters the melt; finally, by controlling the rotary elevating mechanism 7 to be slowly raised and rotated, the melt is gradually grown into a crystal on the seed crystal 72 while the seed crystal 72 is slowly raised and rotated.
Then, the temperature of the melt is controlled by the first heating device 21, and the temperature of the crystal is controlled by the second heating device 5, so that the requirements of different temperature gradients between the crystal and the melt in each growth stage of the lutetium aluminum garnet series crystal are met, and the lutetium aluminum garnet series crystal can be produced by the crystal growth device.
Further, in order to make the upper heat-insulating cylinder 3 and the lower heat-insulating cylinder 2 simultaneously and well insulate the interior thereof, in the crystal growth apparatus provided in this embodiment, as shown in fig. 1, the thickness of the cylinder wall of the upper heat-insulating cylinder 3 is greater than that of the cylinder wall of the lower heat-insulating cylinder 2.
In general, a viewing port 31 is formed in a side wall of the upper heat-preserving container 3, so that a worker can view the crystal growth inside the upper heat-preserving container 3 through the viewing port 31.
Because the middle part of the upper heat-insulating cylinder 3 is communicated with the interior of the furnace body 6, and the side wall of the upper heat-insulating cylinder 3 is provided with the observation port 31, in order to avoid the excessive dissipation of the heat energy in the upper heat-insulating cylinder 3 into the furnace body 6 due to the structure of the upper heat-insulating cylinder 3, the thickness of the cylinder wall of the upper heat-insulating cylinder 3 can be designed to be thicker than that of the cylinder wall of the lower heat-insulating cylinder 2, so that the upper heat-insulating cylinder 3 and the lower heat-insulating cylinder 2 can have the heat-insulating effect with basically the same effect on the interior.
Fig. 3 is a cross-sectional view of a crystal growing apparatus according to another embodiment of the present invention.
Further, in order to make the crystal growth apparatus capable of preserving heat of the melt well and avoid the problem that the crystal growth apparatus cannot produce crystals well due to excessive heat dissipation, in the crystal growth apparatus provided by this embodiment, as shown in fig. 3, a heat insulating brick layer 22 is disposed between the lower heat insulating cylinder 2 and the crucible 4.
The insulating brick layer 22 can be formed by stacking zirconia insulating bricks.
By stacking a circle of insulating brick layer 22 between the lower insulating cylinder 2 and the crucible 4, the crystal growing device can better insulate the melt, so that the crystal growing device can better produce crystals.
Fig. 2 is a cross-sectional view of a crystal growing apparatus according to another embodiment of the present invention.
Further, in order to enable the crucible 4 to be stably positioned in the space formed by the lower heat-preserving cylinder 2 and the tray 1, in the crystal growth device provided by the embodiment, as shown in fig. 2, the crystal growth device further comprises a backing plate 11; the bottom of the lower heat-insulating cylinder 2 is provided with a tray 1, and a backing plate 11 is arranged between the tray 1 and the crucible 4.
The upper surface flatness of the backing plate 11 is better, so that the backing plate 11 has a certain supporting effect on the crucible 4, and the crucible 4 can be more stably positioned on the backing plate 11.
Further, the crystal growing apparatus can better preserve heat of the melt, so as to avoid the problem that the crystal growing apparatus cannot produce crystals well due to excessive heat dissipation, and in the crystal growing apparatus provided by this embodiment, as shown in fig. 2, the backing plate 11 is made of a heat preservation material.
The backing plate 11 can be made of insulating brick materials, and preferably, the backing plate 11 is formed by stacking zirconia insulating bricks.
Through the insulating brick of piling up certain thickness between tray 1 and crucible 4, not only can possess certain supporting role to crucible 4 to can make crystal growth device keep warm better to the fuse-element, thereby make crystal growth device produce the crystal better.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention.
Claims (10)
1. The utility model provides a crystal growth device, includes a heat preservation section of thick bamboo and a lower heat preservation section of thick bamboo, a heat preservation section of thick bamboo is used for holding crucible down, it is used for forming the growth space of crystal to go up a heat preservation section of thick bamboo, its characterized in that, crystal growth device still includes: a first heating device and a second heating device;
the first heating device is arranged on the lower heat-insulating cylinder and used for heating a crucible placed in the lower heat-insulating cylinder so as to heat raw materials in the crucible;
the second heating device is arranged in the upper heat-preserving cylinder and is used for heating the crystal.
2. The crystal growth apparatus of claim 1, wherein the first heating device is an induction coil, and the induction coil is sleeved outside the lower heat-preserving cylinder;
the crystal growth device also comprises a crucible which is an iridium crucible.
3. The crystal growth apparatus of claim 2, further comprising a furnace body, wherein the lower thermal-insulation barrel and the upper thermal-insulation barrel are both located in the furnace body;
and a low-resistance metal cylinder is arranged between the first heating device and the furnace body and sleeved outside the first heating device.
4. The crystal growth apparatus of claim 3, wherein the second heating device is a resistive heater.
5. The crystal growth apparatus of claim 4, wherein the second heating device is cylindrical;
the bottom of going up a heat preservation section of thick bamboo is provided with the brace table, the brace table with go up the inner wall connection of heat preservation section of thick bamboo, second heating device install in on the brace table.
6. The crystal growth apparatus of claim 5, further comprising a rotary lift mechanism and a seed rod;
the rotary lifting mechanism is connected with one end of the seed rod, and the other end of the seed rod is used for fixing seed crystals;
the seed rod is used for enabling the seed crystal to penetrate through the second heating device, and the rotary lifting mechanism is connected with the furnace body.
7. The crystal growth apparatus of claim 1, wherein a wall thickness of the upper thermal insulating cylinder is greater than a wall thickness of the lower thermal insulating cylinder.
8. The crystal growth apparatus of claim 2, wherein a layer of insulating brick is disposed between the lower insulating cylinder and the crucible.
9. The crystal growth apparatus of claim 1, further comprising a backing plate;
the bottom of the lower heat-insulating cylinder is provided with a tray, and the base plate is arranged between the tray and the crucible.
10. The crystal growth apparatus of claim 9, wherein the backing plate is made of a thermal insulating material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921488642.5U CN210420255U (en) | 2019-09-06 | 2019-09-06 | Crystal growing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921488642.5U CN210420255U (en) | 2019-09-06 | 2019-09-06 | Crystal growing device |
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| CN210420255U true CN210420255U (en) | 2020-04-28 |
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| CN201921488642.5U Active CN210420255U (en) | 2019-09-06 | 2019-09-06 | Crystal growing device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112567076A (en) * | 2019-08-21 | 2021-03-26 | 眉山博雅新材料有限公司 | Open type temperature field |
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2019
- 2019-09-06 CN CN201921488642.5U patent/CN210420255U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112567076A (en) * | 2019-08-21 | 2021-03-26 | 眉山博雅新材料有限公司 | Open type temperature field |
| CN112567076B (en) * | 2019-08-21 | 2021-11-16 | 眉山博雅新材料股份有限公司 | Open type temperature field |
| US11441233B2 (en) | 2019-08-21 | 2022-09-13 | Meishan Boya Advanced Materials Co., Ltd. | Temperature field device comprising a first drum, a second drum, and a filler inside the second drum and a space between the second drum and the first drum |
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