CN210394588U

CN210394588U - Device for improving growth rate of single crystal

Info

Publication number: CN210394588U
Application number: CN201921349280.1U
Authority: CN
Inventors: 马腾飞; 汪奇; 马新成; 邹昌盛; 段永兵; 王军; 陈龑
Original assignee: Xinjiang Jinko Energy Co ltd
Current assignee: Xinjiang Jinko Energy Co ltd
Priority date: 2019-08-20
Filing date: 2019-08-20
Publication date: 2020-04-24
Anticipated expiration: 2029-08-20

Abstract

The utility model discloses a device for improving the growth rate of single crystal in the technical field of photovoltaic equipment, which comprises a storage box and a heat exchange device, wherein a crystal bar is inserted in the middle position of the bottom of an inner cavity of the storage box, a plurality of support columns are fixed at the bottom of the inner cavity of the storage box by welding, a water inlet pipe and a water outlet pipe are inserted in the left side wall of the inner cavity of the storage box, the water inlet pipe and the water outlet pipe are fixed with the storage box by welding, the heat exchange device is fixed at the tops of the support columns by welding, and the heat exchange device is positioned outside the crystal bar; this improve setting of single crystal growth rate device, structural design is reasonable, has heat transfer device at the externally mounted of crystal bar, and heat transfer device's outer wall and inner wall are respectively through oxidant oxidation, improve coefficient of thermal radiation, and it has the swell to open at heat transfer device's inside wall, and the swell can increase heat transfer area to can take away more heats, improve the growth rate of monocrystalline silicon.

Description

Device for improving growth rate of single crystal

Technical Field

The utility model relates to a photovoltaic equipment technical field specifically is an improve single crystal growth rate device.

Background

In Czochralski silicon, the improvement of the production efficiency is mainly to reduce the time of ineffective output and to improve the efficiency in effective output. The effective output time of the single crystal is only in the equal diameter stage, and the equal diameter stage accounts for more than half of the total time. The existing single crystal growing device has a serious problem that when the device is used, the heat exchange area is small, the heat radiation coefficient is small, so that heat cannot be discharged in time, and the growth speed of single crystals is influenced.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide an improve single crystal growth rate device to the single crystal growth device who provides in solving above-mentioned background art is when using, and heat transfer area is little, and the coefficient of thermal radiation is little, thereby can not be timely discharge the heat, and influences the problem of the growth rate of single crystal.

In order to achieve the above object, the utility model provides a following technical scheme: a device for improving the growth rate of single crystals comprises a storage box and a heat exchange device, wherein a crystal bar is inserted in the middle position of the bottom of an inner cavity of the storage box, a plurality of support columns are fixed to the bottom of the inner cavity of the storage box in a welded mode, a water inlet pipe and a water outlet pipe are inserted in the left side wall of the inner cavity of the storage box in a welded mode, the water inlet pipe and the water outlet pipe are fixed to the storage box in a welded mode, the heat exchange device is fixed to the tops of the support columns in a welded mode and located outside the crystal bar, the heat exchange device comprises a main box body, a first extension body and a second extension body, the first extension body is fixed to the top of the main box body in a welded mode, the second extension body is fixed to the bottom of the main box body in a welded mode, the inner cavities of the main box body, the first extension body and the, the outer side wall of the first extension body is fixedly welded with a first connecting pipe, the outer side wall of the second extension body is fixedly welded with a second connecting pipe, and the water inlet pipe and the water outlet pipe are respectively communicated with the second connecting pipe and the first connecting pipe.

Preferably, the water inlet pipe with the inside of outlet pipe all overlaps there is the rubber circle, the water inlet pipe with the outlet pipe passes through the rubber circle cover in the second connecting pipe with the outside of first connecting pipe.

Preferably, the bulge is of a semicircular structure.

Preferably, the number of the supporting columns is three, and the three supporting columns are annularly distributed outside the crystal bar.

Compared with the prior art, the beneficial effects of the utility model are that: this improve setting of single crystal growth rate device, structural design is reasonable, has heat transfer device at the externally mounted of crystal bar, and heat transfer device's outer wall and inner wall are respectively through oxidant oxidation, improve coefficient of thermal radiation, and it has the swell to open at heat transfer device's inside wall, and the swell can increase heat transfer area to can take away more heats, improve the growth rate of monocrystalline silicon.

Drawings

FIG. 1 is a schematic structural view of the present invention;

fig. 2 is the schematic structural diagram of the heat exchange device of the present invention.

In the figure: the material storage tank 100, the crystal bar 110, the support column 120, the water inlet pipe 130, the water outlet pipe 140, the heat exchange device 200, the main tank body 210, the bulge 211, the first extension body 220, the first connection pipe 221, the second extension body 230, and the second connection pipe 231.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

The utility model provides a device for improving the growth rate of single crystal, which is used for improving the thermal radiation coefficient, increasing the heat exchange area and taking away more heat, please refer to fig. 1-2, comprising a storage box 100 and a heat exchange device 200.

Referring to fig. 1-2 again, a crystal bar 110 is inserted in the middle of the bottom of the inner cavity of the storage box 100, a plurality of support columns 120 are fixed to the bottom of the inner cavity of the storage box 100 by welding, a water inlet pipe 130 and a water outlet pipe 140 are inserted in the left side wall of the inner cavity of the storage box 100, the water inlet pipe 130 and the water outlet pipe 140 are fixed to the storage box 100 by welding, the storage box 100 is used for storing monocrystalline silicon solution, the support columns 120 are used for supporting the heat exchange device 200, and the water inlet pipe 130 and the water outlet pipe 140 form a circulating water system.

Referring to fig. 1-2 again, the heat exchanging device 200 is fixed to the top of the supporting column 120 by welding, the heat exchanging device 200 is located outside the ingot 110, the heat exchanging device 200 includes a main box 210, a first extending body 220 and a second extending body 230, the first extending body 220 is fixed to the top of the main box 210 by welding, the second extending body 230 is fixed to the bottom of the main box 210 by welding, inner cavities of the main box 210, the first extending body 220 and the second extending body 230 are communicated, a bulge 211 is stamped on an inner sidewall of the main box 210, a first connecting pipe 221 is fixed to an outer sidewall of the first extending body 220 by welding, a second connecting pipe 231 is fixed to an outer sidewall of the second extending body 230 by welding, the water inlet pipe 130 and the water outlet pipe 140 are respectively communicated with the second connecting pipe 231 and the first connecting pipe 221, the heat exchanging device 200 is used for absorbing and taking away heat on the crystal bar 110, and the bulge 211 is used for increasing the heat absorbing area.

Referring to fig. 1-2 again, in order to improve the sealing performance of the pipe connection, rubber rings are sleeved inside the water inlet pipe 130 and the water outlet pipe 140, the water inlet pipe 130 and the water outlet pipe 140 are sleeved outside the second connection pipe 231 and the first connection pipe 221 through the rubber rings, and the rubber rings are used for eliminating gaps between the water inlet pipe 130 and the second connection pipe 231 and between the water outlet pipe 140 and the first connection pipe 221.

Referring to fig. 1-2 again, in order to improve the heat absorption efficiency of the cooling water in the inner cavity of the heat exchange device 200, the bulges 211 are in a semicircular structure, and the bulges 211 are used to increase the heat absorption area.

Referring to fig. 1 again, in order to improve the stability of the heat exchanging device 200, the number of the supporting pillars 120 is three, and the three supporting pillars 120 are annularly distributed outside the ingot 110, and the supporting pillars 120 are used for supporting the heat exchanging device 200.

The number of the support pillars 120 is not limited to the specific number described in the embodiment, and those skilled in the art can increase or decrease the number as required on the premise that the apparatus can achieve the function of increasing the growth rate of the single crystal silicon.

The working principle is as follows: the liquid containing monocrystalline silicon crystals in a high-temperature melting state is poured into the inner cavity of the storage box 100, a valve (not shown in the figure) on the water inlet pipe 130 is opened, cooling water enters the inner cavity of the heat exchange device 200 through the water inlet pipe 130 until the inner cavity of the heat exchange device 200 is filled, the bulge 211 is used for increasing the surface area of the heat exchange device 200, and then the heat on the crystal bar 110 is transferred to the inner cavity of the heat exchange device 200 through the heat exchange device 200, so that the cooling water absorbs the heat and is discharged through the water outlet pipe 140, and the crystallization speed of the monocrystalline silicon is accelerated.

While the invention has been described above with reference to an embodiment, various modifications may be made and equivalents may be substituted for elements thereof without departing from the scope of the invention. In particular, as long as there is no structural conflict, the various features of the disclosed embodiments of the present invention can be used in any combination with each other, and the description of such combinations is not exhaustive in the present specification only for the sake of brevity and resource conservation. Therefore, it is intended that the invention not be limited to the particular embodiments disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.

Claims

1. An apparatus for increasing the growth rate of a single crystal, comprising: the crystal bar storage box comprises a storage box (100) and a heat exchange device (200), a crystal bar (110) is inserted in the middle of the bottom of an inner cavity of the storage box (100), a plurality of support columns (120) are fixed to the bottom of the inner cavity of the storage box (100) in a welded mode, a water inlet pipe (130) and a water outlet pipe (140) are inserted in the left side wall of the inner cavity of the storage box (100), the water inlet pipe (130) and the water outlet pipe (140) are fixed to the storage box (100) in a welded mode, the heat exchange device (200) is fixed to the tops of the support columns (120) in a welded mode, the heat exchange device (200) is located outside the crystal bar (110), the heat exchange device (200) comprises a main box body (210), a first extension body (220) and a second extension body (230), the first extension body (220) is fixed to the tops of the main box body (210) in a welded mode, and the second extension body (230, the main tank body (210), first extension body (220) with the inner chamber intercommunication of second extension body (230), the inside wall stamping forming of main tank body (210) has swell (211), the lateral wall welded fastening of first extension body (220) has first connecting pipe (221), the lateral wall welded fastening of second extension body (230) has second connecting pipe (231), inlet tube (130) with outlet pipe (140) respectively with second connecting pipe (231) with first connecting pipe (221) intercommunication.

2. An apparatus for increasing the growth rate of a single crystal as defined in claim 1, wherein: the water inlet pipe (130) and the water outlet pipe (140) are sleeved with rubber rings, and the water inlet pipe (130) and the water outlet pipe (140) are sleeved outside the second connecting pipe (231) and the first connecting pipe (221) through the rubber rings.

3. An apparatus for increasing the growth rate of a single crystal as defined in claim 1, wherein: the bulge (211) is of a semicircular structure.

4. An apparatus for increasing the growth rate of a single crystal as defined in claim 1, wherein: the number of the supporting columns (120) is three, and the three supporting columns are annularly distributed outside the crystal bar (110).