CN210325714U

CN210325714U - Decoupling plasma processing equipment

Info

Publication number: CN210325714U
Application number: CN201921438168.5U
Authority: CN
Inventors: 刘文彬; 廖宜专; 吴宗祐; 林宗贤
Original assignee: Huaian Imaging Device Manufacturer Corp
Current assignee: Huaian Imaging Device Manufacturer Corp
Priority date: 2019-08-29
Filing date: 2019-08-29
Publication date: 2020-04-14
Anticipated expiration: 2029-08-29

Abstract

The utility model provides a decoupling plasma treatment facility, include: an upper chamber into which a reaction gas is introduced to form a plasma; a lower chamber for accommodating the wafer therein; the insulating cover plate is arranged between the upper chamber and the lower chamber; the microwave generating device is arranged above the insulating cover plate and faces the lower cavity to emit microwaves, and the microwave generating device can accelerate the gasification of water molecules when the water molecules are removed from the upper cavity, so that more efficient equipment cleaning is realized, and the utilization rate of decoupling plasma processing equipment is improved.

Description

Decoupling plasma processing equipment

Technical Field

The utility model relates to a semiconductor technology field, more specifically say, the utility model relates to a decoupling plasma treatment device.

Background

In the existing decoupling plasma processing equipment, because the decoupling plasma process needs to be performed under a vacuum condition and has a high requirement on the purity of the reaction gas, the doping amount of the doping element can be affected if other gases or water molecules are mixed, the reaction chamber of the existing decoupling plasma processing equipment is usually cleaned by deionized water, and after the cleaning, the chamber is heated by covering a heating blanket on the outside of the reaction chamber to accelerate the evaporation of the water molecules, so that the time consumption of the process is long, and the utilization rate of the decoupling plasma processing equipment is also affected.

Therefore, there is a need for improvements in existing decoupled plasma processing apparatus.

SUMMERY OF THE UTILITY MODEL

In order to solve the above problems in the prior art, a decoupling plasma processing apparatus capable of increasing the evaporation rate of water molecules in a reaction chamber is provided.

The utility model provides a decoupling plasma treatment facility, include: an upper chamber into which a reaction gas is introduced to form a plasma; a lower chamber for accommodating the wafer therein; the insulating cover plate is arranged between the upper chamber and the lower chamber; and the microwave generating device is arranged above the insulating cover plate and emits microwaves towards the lower cavity.

The arrangement of the microwave generating device can accelerate the gasification of water molecules when the water molecules are removed from the lower cavity, so that more efficient equipment cleaning is realized, and the utilization rate of decoupling plasma processing equipment is improved.

The utility model discloses an among the preferred technical scheme, still include: and the humidity detection device is arranged in the lower chamber.

The utility model discloses an among the preferred technical scheme, humidity detection device and microwave generating device electric connection, microwave generating device open/close by humidity detection device's testing result control.

The utility model discloses an among the preferred technical scheme, microwave generating device includes: a magnetron for generating a high frequency oscillation wave; the power supply is electrically connected with the magnetron to supply power to the magnetron; and the switch is used for controlling the on-off of the power supply and is electrically connected with the humidity detection device.

In the technical scheme, through the arrangement of the humidity detection device, the automatic control of water molecule removal can be realized, the manpower consumption is reduced, meanwhile, the electric energy is saved, and the water molecule removal efficiency is improved.

The utility model discloses an among the preferred technical scheme, microwave generator sets up in the epicoele indoor to attached insulating cover plate surface sets up.

In the preferred technical solution of the present invention, the microwave generating device is adapted to generate microwaves with frequencies within 300-3000 MHz.

In the technical scheme, the frequency of the microwaves is controlled to be 300-3000MHz, so that the penetration capacity of the microwaves can be increased, the water molecules are rapidly gasified, and the water molecule removal efficiency is improved.

The utility model discloses an among the preferred technical scheme, still include vacuum apparatus, vacuum apparatus is linked together with lower cavity.

In the preferred embodiment of the present invention, the decoupling plasma processing apparatus is a decoupling plasma nitridation apparatus.

The utility model discloses an among the preferred technical scheme, insulating cover plate is the quartz material.

Drawings

Fig. 1 is a schematic structural diagram of a decoupling plasma processing apparatus according to a preferred embodiment of the present invention.

Description of the drawings: 100-decoupling a plasma processing apparatus; 1-an upper chamber; 2-a lower chamber; 3-an insulating cover plate; 4-vacuum equipment; 5-microwave generating device.

Specific technical scheme

The preferred embodiments of the present invention will be described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these technical solutions are only used for explaining the technical principles of the present invention, and are not intended to limit the scope of the present invention. And can be modified as needed by those skilled in the art to suit particular applications.

It should be noted that in the description of the preferred embodiments of the present invention, the terms "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "inner", "outer", and the like, which indicate directions or positional relationships, are based on the directions or positional relationships shown in the drawings, which are for convenience of description only, and do not indicate or imply that the devices or components must have specific orientations, be constructed and operated in specific orientations, and therefore, should not be construed as limiting the present invention.

As shown in fig. 1, a decoupling plasma processing apparatus 100 provided in the preferred embodiment of the present invention includes: an upper chamber 1 into which a reaction gas (not shown) is introduced to form a plasma (not shown); an RF oscillator (not shown) capable of generating a high frequency oscillating wave and ionizing the reaction gas is generally disposed in the upper chamber 1; a lower chamber 2, wherein the lower chamber 2 is arranged below the upper chamber 1 for accommodating a wafer (not shown) therein to receive bombardment of plasma; the insulating cover plate 3 is arranged between the upper chamber 1 and the lower chamber 2; and a vacuum device 4, the vacuum device 4 being in communication with the lower chamber 2 to provide vacuum conditions for the lower chamber 2; specifically, taking decoupling plasma processing apparatus 100 as a decoupling plasma nitridation apparatus as an example, the operation principle of decoupling plasma processing apparatus 100 provided in this embodiment is described: when the coupled plasma processing apparatus 100 is a decoupled plasma nitridation apparatus, that is, the reaction gas is nitrogen, an inlet (not shown) for introducing nitrogen is provided on the upper chamber 1, the nitrogen introduced into the upper chamber 1 is ionized under the action of the high-frequency oscillating wave to form a plasma, and the plasma is doped into the wafer disposed in the lower chamber 2 by bombarding the wafer, in order to prevent air or other impurities, such as water molecules, from affecting the concentration of nitrogen in the plasma, the above process is performed under vacuum conditions, and as the mass production is performed, the plasma may be deposited in the lower chamber 2 to form deposits, thereby affecting the concentration of nitrogen in the plasma, and therefore, it is necessary to perform a regular cleaning operation on the lower chamber 2.

In the prior art, the lower chamber 2 is generally cleaned by deionized water, when the lower chamber 2 is cleaned by deionized water, water molecules are attached to the inner wall of the lower chamber 2, in order to evaporate and discharge the water molecules out of the lower chamber 2 more quickly, in this embodiment, the microwave generating device 5 is disposed above the insulating cover plate 3, specifically, the microwave generating device 5 is attached to the surface of the insulating cover plate 3, the microwave generating device 5 can emit microwaves with a frequency within 300 and 3000MHz to the lower chamber 2, in this frequency range, the heating capacity of the microwaves to the water molecules is high, and the microwave penetration capacity is strong, since the water molecules are polar molecules, the microwaves can polarize the water molecules and orient with the polarity change of the applied high-frequency oscillation wave, the water molecules are frequently subjected to friction loss with each other, so that electromagnetic energy is converted into heat energy, and further, the evaporation speed of the water molecules is accelerated, the faster removal of water molecules in the lower chamber 2 is achieved, specifically, when the water molecule removing process is performed, the vacuum equipment 4 is kept in the operating state to draw the air containing water vapor in the lower chamber 2 to the outside of the lower chamber 2, it should be noted that, in order to enable the microwaves emitted by the microwave generating device 5 to pass through the insulating cover plate 3 without acting on the insulating cover plate 3, in this example, the insulating cover plate 3 is made of quartz, and in some alternative embodiments, the insulating cover plate 3 may also be made of other insulating materials meeting the use requirements.

In a preferred technical solution of this embodiment, the method further includes: a humidity detection device (not shown) disposed in the lower chamber 2, the humidity detection device being electrically connected to the microwave generation device 5, the on/off of the microwave generation device 5 being controlled by a detection result of the humidity detection device, that is, when the humidity in the lower chamber 2 is within a preset threshold range, the microwave generation device 5 and the vacuum apparatus 4 can be controlled to be automatically turned off to stop the removal of water molecules.

The utility model discloses an among the preferred technical scheme, concrete address, microwave generating device 5 includes: a magnetron (not shown) for generating a high-frequency oscillation wave; a power supply (not shown) electrically connected to the magnetron to supply power to the magnetron; and a switch (not shown) for controlling the on/off of the power supply, wherein the switch is electrically connected with the humidity detection device.

So far, the technical solutions of the present invention have been described with reference to the accompanying drawings, but it is obvious to those skilled in the art that the scope of the present invention is not limited to these specific technical solutions. Without departing from the principle of the present invention, a person skilled in the art can make equivalent changes or substitutions to the related technical features, and the technical solutions after these changes or substitutions will fall within the protection scope of the present invention.

Claims

1. A decoupled plasma processing apparatus, comprising:

an upper chamber into which a reaction gas is introduced to form a plasma;

a lower chamber for accommodating the wafer therein;

the insulating cover plate is arranged between the upper chamber and the lower chamber;

and the microwave generating device is arranged above the insulating cover plate and emits microwaves towards the lower chamber.

2. The decoupled plasma processing apparatus of claim 1, further comprising:

and the humidity detection device is arranged in the lower chamber.

3. The decoupled plasma processing apparatus of claim 2, wherein said humidity detecting means is electrically connected to said microwave generating means, and the on/off of said microwave generating means is controlled by the detection result of said humidity detecting means.

4. The decoupled plasma processing apparatus of claim 3, wherein said microwave generating means comprises:

a magnetron for generating a high frequency oscillation wave;

the power supply is electrically connected with the magnetron to supply power to the magnetron;

and the switch is used for controlling the on-off of the power supply and is electrically connected with the humidity detection device.

5. The decoupled plasma processing apparatus of claim 1, wherein said microwave generating device is disposed within said upper chamber and attached to a surface of said insulating cover plate.

6. The decoupled plasma processing apparatus of claim 1 wherein said microwave generating means is adapted to generate microwaves having a frequency within 300-3000 MHz.

7. The decoupling plasma processing device of any of claims 1-6 further comprising a vacuum device, said vacuum device in communication with said lower chamber.

8. The decoupled plasma processing apparatus of claim 7 wherein said decoupled plasma processing apparatus is a decoupled plasma nitridation apparatus.

9. The decoupled plasma processing apparatus of claim 1 wherein said insulating cover plate is quartz.