CN210314469U - Sample changing device of magnetron sputtering reaction equipment - Google Patents
Sample changing device of magnetron sputtering reaction equipment Download PDFInfo
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- CN210314469U CN210314469U CN201920924587.3U CN201920924587U CN210314469U CN 210314469 U CN210314469 U CN 210314469U CN 201920924587 U CN201920924587 U CN 201920924587U CN 210314469 U CN210314469 U CN 210314469U
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 27
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 21
- 230000007306 turnover Effects 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 7
- 230000007246 mechanism Effects 0.000 claims description 4
- 238000004904 shortening Methods 0.000 abstract description 3
- 230000003749 cleanliness Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 abstract description 2
- 230000002349 favourable effect Effects 0.000 abstract description 2
- 230000006872 improvement Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000005070 sampling Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The utility model discloses a magnetron sputtering reaction equipment sample changing piece device, including the sample stock, the device still includes drum, sample piece base and locates the anterior stock tip of sample stock, the stock tip includes stock end, electro-magnet, telescopic machanism and micro-gap switch locate in the drum, the rear of stock end is located to the electro-magnet, telescopic machanism has been installed at the electro-magnet rear, telescopic machanism's the flexible contact micro-gap switch of tail end, sample piece base is including the tail end that is equipped with the sunken mouth, the stock end is in the sunken mouthful business turn over of tail end. The utility model discloses the sample is realized to application magnet suction to use spring and micro-gap switch to realize that the stock is automatic to deviate from, shortening the time of transport, and will avoid the sample wafer to receive the damage in handling, with improvement production efficiency and yield, and be favorable to improving the leakproofness of whole platform equipment, guaranteed technology environment's cleanliness factor.
Description
Technical Field
The utility model relates to a vacuum coating field especially relates to a magnetron sputtering reaction equipment sample changing piece device.
Background
The magnetron sputtering equipment is an experimental instrument for vacuum coating by utilizing a physical vapor deposition method, and can be used for preparing films made of various materials such as metal films, semiconductor films, high polymer films and the like by bombarding a target material by ionized ions and depositing sputtered target material atoms on a substrate to prepare the films.
When magnetron sputtering coating is carried out, after equipment enters a vacuum state, the vacuum degree of a vacuum chamber is required to be constant and the air supply quantity is required to be stable in order to ensure the stability of the process. The utility model is used for realize the transmission of sample wafer between sputter coating main cavity room and accessory cavity to and the getting of sample wafer on the sample wafer frame is put.
As shown in fig. 1, the sample wafer is taken and put between the sample wafer and the sampling rod at the front end of the sampling rod of the existing equipment by adopting the structural matching of the L, because the sampling rod is longer and the matching interface is smaller, and the visual window is small, the successful matching between the sample wafer and the sampling rod can be realized only by higher accuracy and multiple times of visual estimation adjustment, and the matching is not firm, so that the situation of sample wafer sliding is easy to occur. The consumed time is long, and the sample is easy to damage.
Disclosure of Invention
The utility model aims at the defect of prior art, provide a magnetron sputtering reaction equipment sample changing piece device, can avoid the sample piece to receive the damage in handling simultaneously shortening the time of transport.
In order to realize the above purpose, the utility model adopts the following technical scheme:
the utility model provides a magnetron sputtering reaction equipment trades appearance piece device, includes the sample stock, the device still includes drum, appearance piece base and locates the anterior stock tip of sample stock, the stock tip includes stock end, electro-magnet, telescopic machanism and micro-gap switch locate in the drum, the rear of stock end is located to the electro-magnet, telescopic machanism has been installed at the electro-magnet rear, telescopic machanism's the flexible contact micro-gap switch of tail end, appearance piece base is including the tail end that is equipped with sunken mouthful, the stock end is in the sunken mouthful business turn over of tail end.
Further, telescopic machanism includes small pole, screens ring, spring, electro-magnet rear central authorities are equipped with the chamber that holds that supplies the small pole tip to stretch into, the spring housing is established outside the small pole, the front end of spring is fixed at the electro-magnet rear, the rear end of spring is fixed with the contact block, the screens ring is fixed on the drum inner wall, and when long-pole end and electro-magnet removed backward, the contact block contacted with micro-gap switch.
Furthermore, the long rod end is in a round table shape, and the sunken opening of the sample wafer base is a round table-shaped sunken opening matched with the long rod end.
Furthermore, an electromagnet base is fixed behind the electromagnet.
Furthermore, a sample placing area is arranged in the middle of the sample base.
Furthermore, the sample wafer placing area is a magnetron sputtering substrate which is concave downwards into a circular shape.
Furthermore, a contact piece is arranged at the front part of the microswitch, and the tail end of the telescopic mechanism is in telescopic contact with the contact piece.
Further, the micro switch is installed on the switch base.
Further, the sample substrate is sheet-shaped.
Furthermore, the front end of the base of the sample wafer base is a rectangular bulge.
Adopt the technical scheme of the utility model, the beneficial effects of the utility model are that: compared with the prior art, the utility model discloses the sample is realized to application magnet suction to use spring and micro-gap switch to realize that the stock is automatic to deviate from, shortening the time of transport, and will avoid the sample wafer to receive the damage in handling, with improvement production efficiency and yield, and be favorable to improving the leakproofness of whole platform equipment, guaranteed technology environment's cleanliness factor.
Drawings
FIG. 1 is a front end structure view of a prior art long sampling rod as indicated in the background art;
FIG. 2 is a front structure view of a long rod of a sample changing device of a magnetron sputtering reaction device provided by the utility model;
FIG. 3 is a perspective view of the inside of the front part of the long rod of the sample changing device of the magnetron sputtering reaction equipment;
FIG. 4 is a sample substrate structure diagram of a sample changing device of a magnetron sputtering reaction device provided by the present invention;
fig. 5 is an application schematic diagram of a sample changing device of a magnetron sputtering reaction device provided by the present invention.
The device comprises a long rod end 1, a long rod end 2, an electromagnet 3, an electromagnet base 4, a small rod 5, a clamping ring 6, a spring 7, a cylinder 8, a microswitch 9, a contact piece 10, a contact block 11, a switch base 12, a base tail 13, a sample wafer base 14, a magnetron sputtering base 15, a circular truncated cone-shaped sunken port 16, a base front end 17, a first sample frame 18, a main cavity 19, a sample wafer and a sample wafer base 20, a second sample frame 21, a long sampling rod 22, an auxiliary cavity 23 and a long rod shell.
Detailed Description
The specific embodiments of the present invention will be further explained with reference to the accompanying drawings.
As shown in FIG. 1, the front end of the existing long sampling rod 21 is in the shape of a cylinder 7, two L-shaped rails are arranged on two sides of the cylinder 7, and the short ends of the L-shaped rails are along the same clockwise direction. When the sample wafer is taken and put, the height of the sample wafer rack is adjusted to enable two small short rods at the tail end of the sample wafer base 13 to be aligned with the L-shaped track groove, and the long rod is rotated to enable the small short rods to enter the L-shaped short track after the sample wafer enters and touches the bottom end of the L-shaped long track. The matching method has short service life, is not easy to operate, is unstable in matching, and often causes the situation that the sample wafer falls when the long rod is pulled out or the sample wafer falls when the sample wafer is transferred.
As shown in fig. 2-4, a magnetron sputtering reaction equipment trades appearance piece device, including sample stock 21, the device still includes drum 7, appearance piece base 13 and locates the anterior stock tip of sample stock 21, the stock tip includes stock end 1, electro-magnet 2, telescopic machanism and micro-gap switch 8 are located in drum 7, the rear of stock end 1 is located to electro-magnet 2, telescopic machanism has been installed at 2 rear of electro-magnet, telescopic machanism's the flexible contact micro-gap switch 8 of tail end, 2 rear of electro-magnet is fixed with electro-magnet base 3. The end part of the long rod is firmly abutted against the sample wafer substrate under the action of the electromagnet 2.
Telescopic machanism includes small pole 4, screens ring 5, spring 6, 2 rear central authorities of electro-magnet are equipped with the chamber that holds that supplies 4 tip of small pole to stretch into, 6 covers of spring are established outside small pole 4, the front end of spring 6 is fixed in 2 backs of electro-magnet, the rear end of spring 6 is fixed with contact block 10, screens ring 5 is fixed on 7 inner walls of drum, and when stock end 1 and 2 backward movements of electro-magnet, contact block 10 and micro-gap switch 8 contact.
The long rod end 1 is in a round table shape, and the sunken opening of the sample wafer base 13 is a round table-shaped sunken opening 15 matched with the long rod end 1. Namely, the end 1 of the long rod can go deep into the notch, and the two platform surfaces are abutted, so that the contact is stable and the sliding is not easy to occur.
And a sample placing area is arranged in the middle of the sample base 13. The sample wafer placing area is a magnetron sputtering substrate 14 which is concave into a circle.
The front part of the microswitch 8 is provided with a contact piece 9, and the tail end of the telescopic mechanism is in telescopic contact with the contact piece 9. The microswitch 8 is mounted on a switch base 11.
When the electromagnet 2 of the utility model works, the long rod end 1 absorbs the tail part 12 of the base, and the working state is kept in the process of putting the sample wafer into the sample wafer rack; the sample piece accurately enters the sample piece rack track until reaching the designated position until the long sampling rod 21 can not continue to advance, the electromagnet 2 is powered off and has no magnetism, the long sampling rod 21 is separated from the tail part 12 of the sample piece base 13, the long rod is withdrawn, and the sample piece is still left in the sample piece rack.
As shown in fig. 5, 19 is a sample and a sample base, and 23 is a long bar housing. The utility model discloses the application of device is as follows:
in the initial state, the electromagnet 2 is not energized and is in a nonmagnetic state.
In the process of taking out the sample from the first sample rack 17 or the second sample rack 20, the working state of the end of the long rod matching with the sampling base is as follows:
the electromagnet 2 is not electrified and is in a non-working state, and when sampling is carried out, the long rod end 1 is aligned to the circular truncated cone-shaped sunken port 15 of the sample wafer base 13 and roughly matched with the circular truncated cone-shaped sunken port.
The contact piece 9 is moved backwards, the microswitch 8 is pressed down to open the circuit, the electromagnet 2 works to generate attraction force to the tail part of the sample wafer base 13, and the long rod end 1 is tightly matched with the sample wafer base 13.
The long rod is withdrawn, the sample wafer base 13 and the long rod are fixed without relative movement, and the sample wafer base is drawn out from the sample wafer frame to take out the base wafer.
In the process of transferring the sample wafer, the working state of the end part of the long rod matched with the sampling base is as follows:
when the electromagnet 2 works, the long rod end 1 sucks the tail part 12 of the base, the sample wafer is placed in the first sample wafer rack 17 or the second sample wafer rack 20, or the sample wafer is transferred in the main cavity 18 and the auxiliary cavity 22, the electromagnet 2 keeps a working state, and the long sampling rod 21 is tightly matched with the sample wafer base 13 without relative movement.
In the process of putting the sample wafer base 13 into the sample wafer rack, the working state of the end part of the long rod matched with the sampling base is as follows:
The long rod is withdrawn, the sample wafer is stably kept on the sample wafer rack, and the long rod is withdrawn.
It should be noted that the foregoing is only a preferred embodiment of the present invention and the technical principles applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail with reference to the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the scope of the present invention.
Claims (10)
1. The utility model provides a magnetron sputtering reaction equipment trades appearance piece device, includes the sample stock, its characterized in that, the device still includes drum, appearance piece base and locates the anterior stock tip of sample stock, the stock tip includes stock end, electro-magnet, telescopic machanism and micro-gap switch locate in the drum, the rear of stock end is located to the electro-magnet, telescopic machanism has been installed at the electro-magnet rear, telescopic machanism's the flexible contact micro-gap switch of tail end, appearance piece base is including the tail end that is equipped with the recess mouth, the recess mouth business turn over of stock end at the tail end.
2. The magnetron sputtering reaction device sample changing device as claimed in claim 1, wherein the telescoping mechanism comprises a small rod, a clamping ring and a spring, the center of the rear part of the electromagnet is provided with a containing cavity for the end part of the small rod to extend into, the spring is sleeved outside the small rod, the front end of the spring is fixed at the rear part of the electromagnet, the rear end of the spring is fixed with the contact block, the clamping ring is fixed on the inner wall of the cylinder, and when the end of the long rod and the electromagnet move backwards, the contact block is contacted with the micro switch.
3. The magnetron sputtering reaction device sample changing device as claimed in claim 1, wherein the end of the long rod is truncated cone-shaped, and the recess opening of the sample base is a truncated cone-shaped recess opening matched with the end of the long rod.
4. The magnetron sputtering reaction device sample changing device as recited in claim 1, wherein an electromagnet base is fixed behind the electromagnet.
5. The magnetron sputtering reaction device sample changing device as claimed in claim 1, wherein a sample placing area is provided in the middle of the sample base.
6. The magnetron sputtering reaction device sample changing device as claimed in claim 5, wherein the sample placing area is a magnetron sputtering substrate which is recessed in a circular shape.
7. The sample changing device for magnetron sputtering reaction equipment as claimed in claim 1, wherein a contact piece is provided at the front part of the micro switch, and the tail end of the telescopic mechanism is in telescopic contact with the contact piece.
8. The magnetron sputtering reaction device sample changing device as recited in claim 1, wherein the micro switch is mounted on the switch base.
9. The magnetron sputtering reaction device sample changing device as recited in claim 1, wherein the sample base is a plate.
10. The magnetron sputtering reaction device sample changing device as claimed in claim 1, wherein the front end of the base of the sample base is a rectangular protrusion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920924587.3U CN210314469U (en) | 2019-06-19 | 2019-06-19 | Sample changing device of magnetron sputtering reaction equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920924587.3U CN210314469U (en) | 2019-06-19 | 2019-06-19 | Sample changing device of magnetron sputtering reaction equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210314469U true CN210314469U (en) | 2020-04-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920924587.3U Expired - Fee Related CN210314469U (en) | 2019-06-19 | 2019-06-19 | Sample changing device of magnetron sputtering reaction equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210314469U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110129758A (en) * | 2019-06-19 | 2019-08-16 | 浙江工业大学 | A kind of magnetron sputtering consersion unit hook-hang type changes sampling device |
-
2019
- 2019-06-19 CN CN201920924587.3U patent/CN210314469U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110129758A (en) * | 2019-06-19 | 2019-08-16 | 浙江工业大学 | A kind of magnetron sputtering consersion unit hook-hang type changes sampling device |
| CN110129758B (en) * | 2019-06-19 | 2024-02-09 | 浙江工业大学 | Hook type sample replacing device of magnetron sputtering reaction equipment |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200414 |
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| CF01 | Termination of patent right due to non-payment of annual fee |