CN210142660U - Piezoelectric sensor - Google Patents
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- CN210142660U CN210142660U CN201920275145.0U CN201920275145U CN210142660U CN 210142660 U CN210142660 U CN 210142660U CN 201920275145 U CN201920275145 U CN 201920275145U CN 210142660 U CN210142660 U CN 210142660U
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Abstract
The utility model discloses a piezoelectric sensor, including base, the first adhesive layer of setting on the base, set up piezoelectric film layer on first adhesive layer, set up the second adhesive layer on piezoelectric film layer, set up quality piece and the shell of lid on the second adhesive layer and establishing on the base, piezoelectric film layer includes the supporter, sets gradually first electrode, piezoelectric film and the second electrode on the supporter, piezoelectric film's thickness is 0.1-10 mu m, the shell directly or indirectly contacts with the quality piece top, just the cross sectional shape of shell is the polygon. The utility model discloses a piezoelectric sensor simple structure, small, light in weight, and be applicable to mass production.
Description
Technical Field
The utility model relates to a sensor technical field especially relates to a piezoelectric sensor.
Background
Piezoelectric sensors are sensors based on the piezoelectric effect. The piezoelectric sensor can measure various dynamic forces, mechanical impact and vibration, converts the force or deformation into an electric signal, and is widely applied to the fields of acoustics, medicine, mechanics, navigation and the like.
Lead zirconate titanate (PZT) is a PbZrO3And PbTiO3Since the mixed material of (3) has excellent piezoelectric and dielectric properties, PZT is the most widely used piezoelectric material in the conventional piezoelectric sensors. Wherein, the Zr/Ti ratio in PZT is changed or one or two other microelements (such as antimony, tin, manganese, tungsten and the like) are added, and the performance of the PZT is also changed.
The PZT piezoelectric acceleration sensor is one of PZT piezoelectric sensors. The sensor mainly comprises a compression type sensor and a shearing type sensor, and the compression type sensor has higher response frequency compared with the shearing type sensor. Fig. 1 is a schematic structural diagram of a conventional uniaxial compression type piezoelectric acceleration sensor, which includes a center post 1, a piezoelectric plate 2, a mass block 3, a pre-compression spring 4, a fixing member 5, a housing 6, and a base 7.
The conventional piezoelectric sheet 2 is a piezoelectric ceramic sheet and is formed by pressing and sintering piezoelectric ceramic powder, and because the particles of the powder are large, the fired piezoelectric ceramic sheet inevitably has gaps, and the material composition, the density and the thickness also have deviations. In order to reduce the unevenness, it is necessary to polish each piezoelectric ceramic sheet before use, but the unevenness is still present. In addition, the piezoelectric ceramic sheet is brittle, and particularly when the piezoelectric ceramic sheet is thin, the piezoelectric ceramic sheet is easily broken by uneven application of force. In order to prevent the fracture, the thickness of the conventional piezoelectric ceramic plate is generally more than 0.1 mm. Because the intrinsic resonance frequency of the device is inversely proportional to the thickness of the material, the increase of the thickness of the piezoelectric ceramic plate can reduce the resonance frequency of the device and the use frequency range of the device, and the resonance frequency of the existing piezoelectric sensor is only 60 kHz.
In addition, because the density distribution of each component of the piezoelectric ceramic plate is different due to different materials, and machining has errors, the position of the central column is difficult to coincide with the mass center of each component, so that the eccentric phenomenon is generated.
Further, due to the existence of the central column, the size and the mass of the component are increased, the general outer diameter of the existing piezoelectric sensor is 9mm, and the weight is more than 5g, so that the use of the device is limited.
Disclosure of Invention
The utility model aims to solve the technical problem that a piezoelectric sensor is provided, simple structure, small, light in weight just are applicable to mass production.
In order to solve the technical problem, the utility model provides a piezoelectric sensor, including base, the first adhesive layer of setting on the base, set up piezoelectric film layer on first adhesive layer, set up second adhesive layer on piezoelectric film layer, set up quality piece and the shell of lid on the base on the second adhesive layer, piezoelectric film layer includes the supporter, sets gradually first electrode, piezoelectric film and the second electrode on the supporter, piezoelectric film's thickness is 0.1-10 μm, the shell directly or indirectly contacts with the quality piece top, just the cross sectional shape of shell is the polygon.
As a modification of the above, the cross-sectional shape of the housing is hexagonal.
As an improvement of the scheme, an elastic piece is arranged between the shell and the top of the mass block.
As an improvement of the scheme, the support body is made of a hard material which does not generate charges or made of a hard material which generates charges with the quantity smaller than that of the piezoelectric film, and the thickness of the support body is 0.05-2 mm.
As an improvement of the above aspect, the piezoelectric thin film is made of one of Pb, Zr, Ti, Ba, Fe, Bi, Nb, Sr, La, Mn, Co, B, Ni, Li, Na, K, Sn, and Si.
As an improvement of the scheme, the piezoelectric film is a PZT film, a BaTiO film or a BiFeO film3Film, BaSrO3Film, LiNbO3Film, KNbO3Film or LiTaO3A film.
As a modification of the above, the first electrode and the second electrode are made of one of Au, Ti, Pt, Ir, Ni, La, Ni, Ru, Sr, Ag, Cr, Al, Cu.
As an improvement of the scheme, the mass block is made of copper, tungsten or tungsten copper.
As an improvement of the above scheme, the first adhesive layer and the second adhesive layer are made of one of silicone rubber, epoxy resin glue, acrylate glue and polyurethane glue.
As a modification of the above, the base and the housing are made of one of stainless steel, Ti, Al, and Cu.
Implement the utility model discloses, following beneficial effect has:
1. the utility model discloses a little volume piezoelectric sensor is through forming piezoelectric film on the supporter to cooperation first electrode and second electrode are in order to form piezoelectric film layer, are used for replacing traditional piezoceramics piece, the size of device that can significantly reduce, in addition, the utility model discloses a form piezoelectric film layer to form piezoelectric film layer, quality piece and basement through first adhesive layer and second adhesive layer and be connected, need not set up the center post, can avoid traditional compression type acceleration sensor's the eccentric problem of quality, reduce mechanical parts, further heighten the resonant frequency and the homogeneity of device.
2. The utility model discloses set up the cross sectional shape of shell into the polygon, through the edges and corners that increases the shell promptly, reduce the resonance influence of shell to piezoelectric film layer to improve piezoelectric sensor's resonant frequency, and then increase piezoelectric sensor's application scope.
3. The utility model discloses a supporter can also reduce adhesive layer or base and to piezoelectric film's influence under temperature variation or shape change, guarantees measuring result's accuracy.
4. Compare with current piezoceramics piece, the utility model discloses a piezoelectric film layer adopts this kind of structure of supporter, causes piezoelectric film to form on the carrier of large tracts of land, not only can improve production efficiency, can also improve piezoelectric film's homogeneity, makes piezoelectric film's thickness error control within 5%, and roughness is at the nm order of magnitude, compares with current machining mode, the utility model discloses a piezoelectric film has great improvement in the aspect of the homogeneity.
5. Because the piezoelectric film of the utility model is formed on the supporting body, the thickness of the piezoelectric film of the utility model can be controlled within the range of 0.1-10 μm, and the thickness is only below 1/10 of the thickness of the traditional piezoelectric ceramic piece, thereby greatly improving the eigen vibration frequency of the device and enlarging the application range of the device. Furthermore, the utility model discloses piezoelectric film's thickness is very little, can reduce the leading-in error of lateral motion.
6. The utility model discloses a piezoelectric film layer that little volume piezoelectric sensor adopted cuts out in the piezoelectric film material of large size, and consequently each small piezoelectric film performance is close, and the horizontal size error can be controlled at the mu m order of magnitude below 1%, is favorable to little volume piezoelectric sensor's mass production.
Drawings
Fig. 1 is a schematic structural view of a conventional uniaxial compression type piezoelectric acceleration sensor;
fig. 2 is a schematic structural diagram of the piezoelectric sensor of the present invention;
fig. 3 is a schematic structural view of the piezoelectric thin film layer of the present invention;
fig. 4 is a schematic diagram of the resonance frequency test of example 1, example 2, comparative example 1, and comparative example 2 of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the present invention will be described in further detail with reference to the accompanying drawings.
Referring to fig. 2, the utility model provides a pair of piezoelectric sensor, establish shell 6 on base 1 including base 1, the first adhesive layer 2 of setting on base 1, the piezoelectric thin layer 3 of setting on first adhesive layer 2, the second adhesive layer 4 of setting on piezoelectric thin layer 3, the quality piece 5 of setting on second adhesive layer 4 and lid, shell 6 and 5 top direct or indirect contacts of quality piece, just the cross sectional shape of shell 6 is the polygon.
Specifically, the first adhesive layer 2, the piezoelectric film layer 3, the second adhesive layer 4 and the mass block 5 are arranged in an accommodating cavity formed by the base 1 and the shell 6.
An elastic element 7 is arranged between the shell 6 and the top of the mass block 5. Preferably, the elastic member 7 is a spring.
Referring to fig. 3, the piezoelectric thin film layer 3 includes a support 31, a first electrode 32 disposed on the support 31, a piezoelectric thin film 33 disposed on the first electrode 32, and a second electrode 34 disposed on the piezoelectric thin film 33, wherein the thickness of the piezoelectric thin film 33 is 0.1-10 μm.
The supporting body 31 is made of hard material, and in the working process of the sensor, the supporting body 31 does not generate charges or the generated charges are less than the charges generated by the piezoelectric film, so that the influence caused by the charges generated by the supporting body can be avoided or reduced in the action process. Preferably, the material of the support 31 is Si or Al2O3Or SiO2。
The utility model discloses a supporter 31 is used for reducing adhesive layer or base to piezoelectric film's influence under temperature variation or shape change, guarantees measuring result's accuracy. Wherein the thickness of the support 31 is 0.05-2 mm. The thickness of the support body 31 is less than 0.05mm, and the support body is easy to deform in the process of gluing and fixing, so that the piezoelectric property of the piezoelectric film is influenced; when the thickness of the support body 31 is more than 2mm, the effect is not remarkable, but the size and weight of the device are increased. Preferably, the support 31 has a thickness of 0.1 to 1 mm. Specifically, the thickness of the support is 0.05mm, 0.1mm, 0.3mm, 0.5mm, 0.8mm, 1mm, 1.2mm, 1.5mm, 1.8mm or 2 mm.
The piezoelectric film 33 of the present invention is formed on the support 31 having a large area by physical or chemical deposition, wherein the size of the support 31 may be 4 inches, 6 inches or 8 inches. Specifically, a magnetron sputtering method, a hydrothermal method, an electrochemical method, a sol-gel method, organic chemical vapor deposition, pulse laser deposition, or a high-pressure particle-jet substrate method may be employed to form a large-area piezoelectric thin film on the support.
Compare with current piezoceramics piece, the utility model discloses a piezoelectric film layer 3 adopts this kind of structure of supporter, causes piezoelectric film 33 to form on the carrier of large tracts of land, not only can improve production efficiency, can also improve piezoelectric film 33's homogeneity, makes piezoelectric film 33's thickness error control within 5%, and roughness is at the nm order of magnitude, compares with current machining mode, the utility model discloses a piezoelectric film has great improvement in the aspect of the homogeneity.
Because the utility model discloses a piezoelectric film 33 is formed on supporter 31, so the utility model discloses piezoelectric film 33's thickness can be controlled at 0.1-10 mu m within range, and its thickness only is below 1/10 of traditional piezoceramics piece thickness, consequently can improve the eigen vibration frequency of device by a wide margin, enlarges the application range of device, the utility model discloses piezoelectric sensor's vibration frequency can reach 100 kHz. Because the sensor in fig. 1 uses a thick piezoelectric ceramic plate, the induced error of the transverse motion is generated, and the thickness of the piezoelectric film 33 of the present invention is very small, so the induced error of the transverse motion can be reduced. Preferably, the thickness of the piezoelectric film 33 is 0.3 to 5 μm. Specifically, the thickness of the piezoelectric thin film 33 is 0.1 μm, 0.3 μm, 0.5 μm, 0.8 μm, 1 μm, 1.5 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, or 10 μm.
The piezoelectric film 33 is made of one of Pb, Zr, Ti, Ba, Fe, Bi, Nb, Sr, La, Mn, Co, B, Ni, Li, Na, K, Sn, and Si.
Preferably, the piezoelectric film 33 is a PZT film, a BaTiO film, or BiFeO3Film, BaSrO3Film, LiNbO3Film, KNbO3Film or LiTaO3A film.
The utility model discloses a piezoelectric sensor is through forming piezoelectric film on the supporter to cooperation first electrode and second electrode are in order to form piezoelectric film layer, are used for replacing traditional piezoceramics piece, and the size of device that can significantly reduce, in addition, the utility model discloses a form piezoelectric film layer to form piezoelectric film layer, quality piece and basement through first adhesive layer and second adhesive layer and connect, need not set up the center post, can avoid traditional compression type acceleration sensor's the eccentric problem of quality, reduce mechanical parts, further heighten the resonant frequency and the homogeneity of device.
Secondly, the utility model discloses a piezoelectric film that piezoelectric sensor adopted cuts out in large size piezoelectric film, and consequently each small piezoelectric film performance is close, and the micron order of magnitude below 1% can be controlled to horizontal size error, is favorable to piezoelectric sensor's mass production, and is specific, piezoelectric film if adopt square cutting, the length of a side can be less than 5mm, the equipment back, the utility model discloses piezoelectric sensor's weight can fall to 3 g.
And again, the utility model discloses set up the cross sectional shape of shell 6 into the polygon, through the edges and corners that increases shell 6 promptly, reduce the resonance influence of shell to piezoelectric film layer to improve piezoelectric sensor's resonant frequency, and then increase piezoelectric sensor's application scope.
In order to improve the mounting efficiency and reduce the mounting cost, the sectional shape of the housing 6 is preferably hexagonal.
The first electrode 32 and the second electrode 34 are made of one of Au, Ti, Pt, Ir, Ni, La, Ni, Ru, Sr, Ag, Cr, Al, and Cu. In other embodiments of the present invention, the first electrode 32 and the second electrode 34 may also be formed of SrRuO3、LaNiO3、InTiO3Etc. of oxide conductive material.
Wherein the base 1 and the housing 6 are made of a lightweight metal. Preferably, the base 1 and the case 6 are made of one of stainless steel, Ti, Al and Cu, but not limited thereto.
Preferably, the mass 5 is made of copper, tungsten or tungsten copper. The first adhesive layer 2 and the second adhesive layer 4 are made of one or more of silicone rubber, epoxy resin glue, acrylate glue and polyurethane glue.
The invention will be further illustrated by the following specific examples
Example 1
A piezoelectric sensor comprises a base, a first adhesive layer arranged on the base, a piezoelectric thin film layer arranged on the first adhesive layer, a second adhesive layer arranged on the piezoelectric thin film layer, a mass block arranged on the second adhesive layer, and a shell covering the base, wherein the piezoelectric thin film layer comprises a supporting body, a first electrode, a piezoelectric thin film and a second electrode which are sequentially arranged on the supporting body, the thickness of the piezoelectric thin film is 0.5 mu m, the cross section of the shell is hexagonal, and the thickness of the shell is 1 mm.
Example 2
A piezoelectric sensor comprises a base, a first adhesive layer arranged on the base, a piezoelectric thin film layer arranged on the first adhesive layer, a second adhesive layer arranged on the piezoelectric thin film layer, a mass block arranged on the second adhesive layer, and a shell covering the base, wherein the piezoelectric thin film layer comprises a supporting body, a first electrode, a piezoelectric thin film and a second electrode which are sequentially arranged on the supporting body, the thickness of the piezoelectric thin film is 0.5 mu m, the cross section of the shell is hexagonal, and the thickness of the shell is 0.5 mm.
Comparative example 1
A piezoelectric sensor comprises a base, a first adhesive layer arranged on the base, a piezoelectric thin film layer arranged on the first adhesive layer, a second adhesive layer arranged on the piezoelectric thin film layer, a mass block arranged on the second adhesive layer, and a shell covering the base, wherein the piezoelectric thin film layer comprises a supporting body, a first electrode, a piezoelectric thin film and a second electrode which are sequentially arranged on the supporting body, the thickness of the piezoelectric thin film is 0.5 mu m, the cross section of the shell is circular, and the thickness of the shell is 1 mm.
Comparative example 2
A piezoelectric sensor comprises a base, a first adhesive layer arranged on the base, a piezoelectric thin film layer arranged on the first adhesive layer, a second adhesive layer arranged on the piezoelectric thin film layer, a mass block arranged on the second adhesive layer, and a shell covering the base, wherein the piezoelectric thin film layer comprises a supporting body, a first electrode, a piezoelectric thin film and a second electrode which are sequentially arranged on the supporting body, the thickness of the piezoelectric thin film is 0.5 mu m, the cross section of the shell is circular, and the thickness of the shell is 0.5 mm.
The piezoelectric sensors of example 1, example 2, comparative example 1 and comparative example 2 were subjected to a resonance frequency test, and the results are shown in fig. 4.
The above disclosure is only a preferred embodiment of the present invention, and certainly should not be taken as limiting the scope of the invention, which is defined by the claims and their equivalents.
Claims (10)
1. A piezoelectric sensor is characterized by comprising a base, a first adhesive layer arranged on the base, a piezoelectric thin film layer arranged on the first adhesive layer, a second adhesive layer arranged on the piezoelectric thin film layer, a mass block arranged on the second adhesive layer, and a shell covering the base, wherein the piezoelectric thin film layer comprises a supporting body, a first electrode, a piezoelectric thin film and a second electrode which are sequentially arranged on the supporting body, the thickness of the piezoelectric thin film is 0.1-10 mu m, the shell is in direct or indirect contact with the top of the mass block, and the cross section of the shell is polygonal.
2. The piezoelectric sensor of claim 1, wherein the cross-sectional shape of the housing is hexagonal.
3. The piezoelectric transducer of claim 1, wherein a spring is disposed between the housing and the top of the mass.
4. The piezoelectric sensor according to claim 1, wherein the support is made of a hard material that does not generate electric charges or a hard material that generates electric charges less than that of the piezoelectric film, and the support has a thickness of 0.05-2 mm.
5. The piezoelectric sensor according to claim 1, wherein the piezoelectric thin film is made of one of Pb, Zr, Ti, Ba, Fe, Bi, Nb, Sr, La, Mn, Co, B, Ni, Li, Na, K, Sn, and Si.
6. As claimed in claimThe piezoelectric sensor is characterized in that the piezoelectric film is a PZT film, a BaTiO film or a BiFeO film3Film, BaSrO3Film, LiNbO3Film, KNbO3Film or LiTaO3A film.
7. The piezoelectric sensor of claim 1, wherein the first and second electrodes are made of one of Au, Ti, Pt, Ir, Ni, La, Ni, Ru, Sr, Ag, Cr, Al, Cu.
8. The piezoelectric transducer of claim 1, wherein the mass is made of copper, tungsten, or tungsten copper.
9. The piezoelectric sensor of claim 1, wherein the first adhesive layer and the second adhesive layer are made of one of silicone rubber, epoxy glue, acrylate glue, and polyurethane glue.
10. The piezoelectric transducer of claim 1, wherein the base and housing are made of one of stainless steel, Ti, Al, and Cu.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920275145.0U CN210142660U (en) | 2019-03-04 | 2019-03-04 | Piezoelectric sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920275145.0U CN210142660U (en) | 2019-03-04 | 2019-03-04 | Piezoelectric sensor |
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| Publication Number | Publication Date |
|---|---|
| CN210142660U true CN210142660U (en) | 2020-03-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920275145.0U Active CN210142660U (en) | 2019-03-04 | 2019-03-04 | Piezoelectric sensor |
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| Country | Link |
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| CN (1) | CN210142660U (en) |
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- 2019-03-04 CN CN201920275145.0U patent/CN210142660U/en active Active
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