CN209993623U - Light emitting diode - Google Patents
Light emitting diode Download PDFInfo
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- CN209993623U CN209993623U CN201921095683.8U CN201921095683U CN209993623U CN 209993623 U CN209993623 U CN 209993623U CN 201921095683 U CN201921095683 U CN 201921095683U CN 209993623 U CN209993623 U CN 209993623U
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Abstract
The utility model discloses a light-emitting diode, include: a transparent substrate; the transparent electrode is positioned on the transparent substrate; an electron transport layer is positioned on the transparent electrode; the light-emitting layer is positioned on the electron transport layer and comprises a lead-based quantum dot layer and a perovskite layer, the lead-based quantum dot layer is positioned on the electron transport layer, the perovskite layer is positioned on the lead-based quantum dot layer, and crack gaps of the lead-based quantum dot layer, caused by ligand exchange, are filled with the perovskite layer; a hole transport layer on the perovskite layer; an anode is on the hole transport layer. The utility model discloses the low defect state and the high carrier transmission rate of perovskite material have been applied and the surface defect and the carrier transmission of luminescent layer are improved to fill the perovskite in the fissured clearance that leads to because of the ligand exchange through at lead-based quantum dot layer, improved the film forming quality of luminescent layer.
Description
Technical Field
The embodiment of the utility model provides a relate to the emitting diode technique, especially relate to a emitting diode.
Background
Quantum Dots (QDs) are composed of a finite number of atoms, all three dimensions on the order of nanometers. The quantum dot material can receive exciting light to generate fluorescence, has the characteristics of narrow excitation spectrum and wide emission spectrum, and can enable the emission spectrum to be different by changing the size of the quantum dot, so that the quantum dot material is applied to the technical field of display at present to improve the luminous efficiency and the color gamut. The quantum dots are used as a novel semiconductor nano material with excellent photoelectric characteristics, have the advantages of simple preparation process, low cost and adjustable spectrum, can be prepared in a large area, and can also enable the wavelength of emitted light of a device to be adjustable due to quantum confinement effect. The lead-based quantum dots are ideal next-generation near-infrared light-emitting diode materials due to the advantages of high quantum yield, uniform particle size distribution and stability in air. However, the near-infrared light emitting diode has the problems of more surface defect states of lead-based quantum dots and low carrier transmission rate, and although the carrier mobility of a light emitting layer can be improved in a ligand exchange mode, the problem of cracking caused by a long-chain short-chain thin film is solved.
SUMMERY OF THE UTILITY MODEL
The utility model provides a light emitting diode and preparation method fills the perovskite through the crack clearance that leads to exchanging at lead-based quantum dot layer ligand to improve light emitting diode's photoelectric properties and stability.
The embodiment of the utility model provides a still provide a light emitting diode, include:
a transparent substrate;
the transparent electrode is positioned on the transparent substrate;
an electron transport layer is positioned on the transparent electrode;
the light-emitting layer is positioned on the electron transport layer and comprises a lead-based quantum dot layer and a perovskite layer, the lead-based quantum dot layer is positioned on the electron transport layer, the perovskite layer is positioned on the lead-based quantum dot layer, and crack gaps of the lead-based quantum dot layer, caused by ligand exchange, are filled with the perovskite layer;
a hole transport layer on the perovskite layer;
an anode is on the hole transport layer.
Optionally, the lead-based quantum dot includes: PbSe quantum dots, PbTe quantum dots or PbS quantum dots.
Optionally, the material of the electron transport layer includes: ZnO, AlQ3Or TiO2。
Optionally, the hole transport layer includes: CBP or NPB.
Optionally, the anode material includes: MoO3Au or MoO3/Al。
Optionally, the material of the transparent electrode includes: ITO, AgNW, or FTO.
Optionally, the material of the transparent substrate includes: glass, transparent PET, polyimide, or sapphire.
Optionally, a hole blocking layer is further included between the electron transport layer and the light emitting layer.
Optionally, an electron blocking layer is further included between the light emitting layer and the hole transport layer.
Optionally, the transparent electrode and the anode are further connected to a lead respectively.
The utility model discloses the low defect state and the high carrier transmission rate of perovskite material have been applied and the surface defect and the carrier transmission of luminescent layer are improved, fill the perovskite through the crack clearance that leads to in the exchange of lead-based quantum dot layer ligand, have improved the film quality of luminescent layer, have realized the effect that improves emitting diode's photoelectric property and stability.
Drawings
Fig. 1 is a flowchart of a method for manufacturing a light emitting diode according to a first embodiment of the present invention;
fig. 2 is a schematic structural diagram of a light emitting diode according to a second embodiment of the present invention;
fig. 3 is a schematic structural diagram of a light emitting layer of a light emitting diode according to a second embodiment of the present invention.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments with reference to the accompanying drawings. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that the described embodiments are only some embodiments of the invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art without any creative work belong to the protection scope of the present invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Furthermore, the terms "first," "second," and the like may be used herein to describe various orientations, actions, steps, elements, or the like, but the orientations, actions, steps, or elements are not limited by these terms. These terms are only used to distinguish one direction, action, step or element from another direction, action, step or element. For example, the first speed difference may be referred to as a second speed difference, and similarly, the second speed difference may be referred to as a first speed difference, without departing from the scope of the present disclosure. The first speed difference and the second speed difference are both speed differences, but they are not the same speed difference. The terms "first", "second", etc. are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise. It should be noted that when a portion is referred to as being "secured to" another portion, it can be directly on the other portion or there can be an intervening portion. When a portion is said to be "connected" to another portion, it may be directly connected to the other portion or intervening portions may be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only and do not denote a unique embodiment.
Before discussing exemplary embodiments in more detail, it should be noted that some exemplary embodiments are described as processes or methods depicted as flowcharts. Although a flowchart may describe the steps as a sequential process, many of the steps can be performed in parallel, concurrently or simultaneously. In addition, the order of the steps may be rearranged. A process may be terminated when its operations are completed, but may have additional steps not included in the figure. A process may correspond to a method, a function, a procedure, a subroutine, a subprogram, etc.
Example one
Fig. 1 is a flowchart of a method for manufacturing a light emitting diode according to an embodiment of the present invention, which specifically includes the following steps:
step 202, forming a transparent electrode on the transparent substrate.
In this embodiment, the transparent substrate is made of one of glass, transparent PET, polyimide, and sapphire; the material of the transparent electrode is a wide band gap oxide semiconductor transparent to visible light, and is preferably: ITO (indium tin oxide), AgNW (silver nanowires), or FTO (tin oxide). For example, taking the preparation of an ITO electrode on a glass substrate as an example, a whole layer of an ITO transparent conductive film is first prepared on the glass substrate, and the preparation process may be one or more of magnetron sputtering, chemical vapor deposition, vacuum reactive evaporation, a sol-gel method, microwave ECR plasma reactive evaporation deposition, pulsed laser deposition, and spray pyrolysis; after the ITO transparent conductive film is prepared, the transparent conductive film is engraved into an electrode (cathode) of a light-emitting diode by laser. Alternative embodiments may also use optical etching to pattern the transparent conductive film into the electrodes of the light emitting diode.
Step 204, forming an electron transport layer on the transparent electrode.
In this embodiment, the material of the electron transport layer includes: ZnO (Zinc oxide) and AlQ3(8-hydroxyquinoline aluminum) or TiO2(titanium dioxide). Illustratively, taking ZnO as an example of a material for preparing an electron transport layer, a ZnO solution is spin-coated on a transparent electrode, in this embodiment, the rotation speed during the suspension coating is 3000 rpm, and the spin-coating time is 1 minute; and then heat-treated in air at a temperature of 100 c for 10 minutes. In other embodiments the ZnO layer also acts simultaneously as a hole blocking layer. In other embodiments, other materials may be used for the hole blocking layer. Alternatively, the electron transport layer may be formed by chemical vapor deposition, vacuum reactive evaporation, or the like.
In an alternative embodiment, step 204 is followed by forming a hole blocking layer on the electron transport layer.
In an alternative embodiment, step 204 is preceded by washing the structure obtained in step 202 with soap water, deionized water, acetone, and isopropyl alcohol in sequence.
Step 206, a lead-based quantum dot layer is formed on the electron transport layer.
In the present embodiment, the lead-based quantum dots include: one or more of PbSe (lead selenide) quantum dots, PbTe (lead telluride) quantum dots or PbS (lead sulfide) quantum dots.
Illustratively, for the preparation of PbS quantum dots:
step A, spin-coating a PbS solution on the electron transmission layer, wherein the rotation speed during the suspension coating is 1000 revolutions per minute, and the spin-coating time is 30 seconds;
step B, covering for 30 seconds by using a TBAI (tetrabutylammonium iodide) methanol solution, and then carrying out spin coating to carry out ligand replacement;
step C, rinsing by spin coating for 1 minute after covering and standing for 5 seconds with methanol. This step may be repeated 2-4 times in alternative embodiments. The lead-based quantum dot layer prepared by step 206 may develop crack gaps.
Step 208, a perovskite layer is formed on the lead-based quantum dot layer.
In this example, a perovskite precursor solution was spin coated on the lead-based quantum dot layer. Illustratively, the step of spin coating the perovskite precursor solution on the lead-based quantum dot layer comprises: firstly, dripping 500uL of perovskite precursor solution on a lead-based quantum dot layer, standing and covering the lead-based quantum dot layer for 5 seconds; then, the spin coating was carried out at a rotation speed of 2000 rpm for 20 seconds. At this time, the perovskite fills the crack gap of the lead-based quantum dot layer prepared in step 206, a perovskite precursor layer is formed on the lead-based quantum dot layer, and finally, the perovskite precursor layer is heat-treated in a glove box at a temperature of 100 ℃ for 10 minutes to form a perovskite precursor layer, so that a perovskite layer is formed, and the lead-based quantum dot layer and the perovskite layer form a light-emitting layer.
Step 210, forming a hole transport layer on the perovskite layer;
in this embodiment, the materials of the hole transport layer include: CBP or NPB. CPB is 4, 4' -bis (9-carbazole) biphenyl; NPB is N, N '-di (naphthalen-2-yl) -N, N' -diphenyl-bisdiaminobiphenyl. Illustratively, taking CBP as the hole transport layer as an example, the structure obtained in step 208 is transferred into a vacuum chamber (the degree of vacuum is preferably 1 × 10)-7torr) a CBP layer is deposited by thermal evaporation. In other embodiments, the CBP or NPB may also act as both electron blocking layers.
In an alternative embodiment, forming TCTA as an electron blocking layer is also included prior to step 210.
Step 212, an anode is formed on the hole transport layer.
In this embodiment, the anode material includes: MoO3Au or MoO3and/Al. Exemplarily in MoO3And Au as anode material, the structure obtained in step 210 is transferred into a vacuum chamber, and MoO is deposited simultaneously by thermal evaporation3And Au to form the anode. In other embodiments, the method further comprises sequentially evaporating MoO3And Au.
According to the technical scheme, the lead-based quantum dot layer is formed on the electron transmission layer, the perovskite layer is formed on the lead-based quantum dot layer, the crack gaps caused by ligand exchange are effectively filled, the film forming quality of the light emitting layer is improved, the surface defects and carrier transmission of the light emitting layer are improved by applying the low defect state and high carrier transmission rate of the perovskite material, and the photoelectric property and stability of the light emitting diode are improved.
Example two
Fig. 2 is a light emitting diode according to a second embodiment of the present invention, where the light emitting diode specifically includes:
the transparent substrate 1, specifically, the material of the transparent substrate 1 is one of glass, transparent PET, polyimide or sapphire, and preferably, the material of the transparent substrate 1 is glass.
The transparent electrode 2 is located on the transparent substrate 1, and specifically, the material of the transparent electrode 2 includes: ITO, AgNW or FTO, preferably, the material of the transparent electrode 2 is ITO.
The electron transport layer 3 is located on the transparent electrode 2, and specifically, the material of the electron transport layer 3 includes: ZnO, AlQ3 or TiO2, and preferably, the material of the electron transport layer 3 is ZnO.
The light emitting layer 4 is located on the electron transport layer 3, and referring to fig. 3, the light emitting layer 4 includes a lead-based quantum dot layer 41 and a perovskite layer 42, the lead-based quantum dot layer 41 is located on the electron transport layer 3, the perovskite layer 42 is located on the lead-based quantum dot layer 41, and a crack gap 411 of the lead-based quantum dot layer 41 due to ligand exchange is filled. Specifically, the lead-based quantum dots include: the material of the PbSe quantum dots, the PbTe quantum dots or the PbS quantum dots is preferably PbS quantum dots.
The hole transport layer 5 is located on the perovskite layer 42, and specifically, the material of the hole transport layer 5 includes: CBP or NPB, preferably, the material of the hole transport layer 5 is CBP.
The anode 6 is located on the hole transport layer 5, and specifically, the material of the anode 6 includes: MoO3Au and/or Al, preferably MoO3And a complex of Au.
In an alternative embodiment, a hole blocking layer is also included between the electron transport layer 3 and the light emitting layer 4. An electron blocking layer is further included between the light-emitting layer 4 and the hole transport layer 5, and specifically, the material of the electron blocking layer and the material of the hole transport layer are the same.
In an alternative embodiment, the transparent electrode 2 and the anode 6 are each further connected with a wire 7.
According to the technical scheme of the embodiment, the perovskite is filled in the crack gap caused by ligand exchange of the lead-based quantum dot layer 41, the film forming quality of the light emitting layer is improved, meanwhile, the surface defect and carrier transmission of the light emitting layer 4 are improved by applying the low defect state and high carrier transmission rate of the perovskite material, and the photoelectric property and stability of the light emitting diode are improved.
It should be noted that the foregoing is only a preferred embodiment of the present invention and the technical principles applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments illustrated herein, but is capable of various obvious modifications, rearrangements and substitutions without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail with reference to the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the scope of the present invention.
Claims (10)
1. A light emitting diode, comprising:
a transparent substrate;
the transparent electrode is positioned on the transparent substrate;
an electron transport layer is positioned on the transparent electrode;
the light-emitting layer is positioned on the electron transport layer and comprises a lead-based quantum dot layer and a perovskite layer, the lead-based quantum dot layer is positioned on the electron transport layer, the perovskite layer is positioned on the lead-based quantum dot layer, and crack gaps of the lead-based quantum dot layer, caused by ligand exchange, are filled with the perovskite layer;
a hole transport layer on the perovskite layer;
an anode is on the hole transport layer.
2. The light-emitting diode of claim 1, wherein the lead-based quantum dot comprises: PbSe quantum dots, PbTe quantum dots or PbS quantum dots.
3. The led of claim 1, wherein the electron transport layer comprises a material comprising: ZnO, AlQ3Or TiO2。
4. The led of claim 1, wherein the hole transport layer comprises materials comprising: CBP or NPB.
5. The led of claim 1, wherein the anode comprises a material comprising: MoO3Au or MoO3/Al。
6. The led of claim 1, wherein the material of the transparent electrode comprises: ITO, AgNW, or FTO.
7. The led of claim 1, wherein the material of the transparent substrate comprises: glass, transparent PET, polyimide, or sapphire.
8. The led of claim 1, further comprising a hole blocking layer between said electron transport layer and said light emitting layer.
9. The led of claim 1, further comprising an electron blocking layer between said light-emitting layer and said hole transport layer.
10. The led of claim 1, wherein said transparent electrode and said anode are further connected to a conductive wire, respectively.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921095683.8U CN209993623U (en) | 2019-07-12 | 2019-07-12 | Light emitting diode |
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| CN201921095683.8U CN209993623U (en) | 2019-07-12 | 2019-07-12 | Light emitting diode |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364634A (en) * | 2019-07-12 | 2019-10-22 | 南方科技大学 | Light emitting diode and preparation method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110364634A (en) * | 2019-07-12 | 2019-10-22 | 南方科技大学 | Light emitting diode and preparation method |
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