CN209759572U

CN209759572U - Selenium source heating device

Info

Publication number: CN209759572U
Application number: CN201822165257.9U
Authority: CN
Inventors: 瞿佳华
Original assignee: Huaxia Energy (guangdong) Amperex Technology Ltd
Current assignee: Dongjun new energy Co.,Ltd.
Priority date: 2018-12-19
Filing date: 2018-12-19
Publication date: 2019-12-10
Anticipated expiration: 2028-12-19

Abstract

The utility model provides a selenium source heating device, include: the crucible heating device comprises a crucible, a nozzle, a first heating device and a second heating device, wherein the crucible is provided with a cavity, the top end of the cavity is provided with an opening, the nozzle is connected with the opening, the first heating device is arranged along the wall of the crucible, and the second heating device is arranged along the outer wall of the nozzle; the heating temperature of the first heating device enables the selenium source to be evaporated, and the heating temperature of the second heating device is higher than that of the first heating device, so that the selenium source can keep a small molecular structure, the probability of selenium vacancy defects in crystals is reduced, the acceptor concentration in an absorption layer is improved, the carrier concentration is increased, and the battery efficiency is improved.

Description

Selenium source heating device

Technical Field

The utility model relates to an evaporation coating technology field especially relates to a selenium source heating device.

Background

The evaporation coating refers to a process of forming a coating by heating, evaporating or sublimating a substance to be formed into a film, and condensing or depositing the substance on the surface of a low-temperature workpiece or a substrate in a high-temperature environment. Wait that the film forming material heats the evaporation or sublimes the back in the coating by vaporization crucible inside, rise and send through the evaporation orifice of coating by vaporization crucible top, wait that the coating by vaporization base plate is at the uniform velocity through the position in evaporation orifice exit, the evaporation wait that the film forming material leaves the heating after the coating by vaporization crucible and cool down gradually, evaporation motion's speed also reduces gradually, finally at the surperficial deposit formation rete of waiting to coat by vaporization base plate.

in a heating device for preparing a high-efficiency copper indium gallium selenide (CIGS, Cu In Ga Se) thin-film solar cell, a CIGS absorption layer prepared by a co-evaporation method is a core film layer of the whole cell. The factors affecting the layer are many, the main factors are temperature and deposition rate, wherein the temperature includes source temperature, glass substrate temperature and the like, the source temperature has great influence on the deposition rate, and the selenium source is greatly different from other metal sources. In the case of selenium, the melting point is 221 ℃, the heating temperature of the selenium source is generally maintained at 200-300 ℃ during the co-evaporation, and in this temperature condition, selenium atoms can be rapidly evaporated due to the higher vacuum state of the chamber and react with other metal atoms to form a CIGS absorbing layer.

However, the selenium produced by this process is all in the form of molecular clusters, namely: selenium X (X is more than 5), and the energy and chemical activity of the cluster macromolecular selenium are low when the cluster macromolecular selenium reacts with other metal atoms, so that the crystal form and the quality of the generated CIGS thin film are poor. In addition, the initial reaction temperature in the co-evaporation method is low, when selenium is a macromolecule, the surface appearance of the generated CIGS is poor, the number of pinhole defects is large, meanwhile, a plurality of fine grains are generated on the surface of the film, and the fine grains, the corresponding crystal faces and the pinhole defects on the surface can become electron-hole recombination centers in subsequent components, so that the open voltage is reduced, the leakage current is increased, and the battery efficiency is low.

SUMMERY OF THE UTILITY MODEL

The embodiment of the utility model provides a selenium source heating device to the lower selenium that leads to of temperature is taken advantage of the macromolecule cluster to be the main in solving current selenium source heating device, and then leads to the problem that CIGS rete quality is low.

In order to solve the technical problem, the utility model discloses a realize like this: a selenium source heating apparatus comprising: the crucible heating device comprises a crucible, a nozzle, a first heating device and a second heating device, wherein the crucible is provided with a cavity, the top end of the cavity is provided with an opening, the nozzle is connected with the opening, the first heating device is arranged along the wall of the crucible, and the second heating device is arranged along the outer wall of the nozzle; the heating temperature of the first heating device enables the selenium source to be evaporated, and the heating temperature of the second heating device is higher than that of the first heating device.

Optionally, the first heating means is a heating wire disposed around the crucible wall.

Optionally, the second heating means is a heating wire disposed along an outer wall of the nozzle.

Optionally, the second heating means is a heating plate disposed along an outer wall of the nozzle.

Optionally, the nozzle is made of titanium.

Optionally, the nozzle is made of ceramic.

Optionally, the working temperature of the first heating device is between 200 and 300 ℃.

Optionally, the operating temperature of the second heating device is between 400 and 500 ℃.

Optionally, the nozzle has a diameter smaller than a diameter of the crucible.

Compared with the prior art, the utility model provides a selenium source heating device, two-stage process heating through first heating device and second heating device, make selenium be the gaseous state by solid-state sublimation, and the schizolysis is micromolecule cluster structure, realize on the one hand that the selenium source evaporates by vaporization to glass surface and other metal reactions and generates CIGS absorbed layer with micromolecule or even monoatomic molecule, the micromolecule selenium that on the other hand this process generated has higher reactivity, reaction rate is fast, crystal quality is good, and then greatly reduced the probability that selenium vacancy defect appears in the crystal, improve the acceptor concentration in the absorbed layer, thereby increase carrier concentration, and the battery efficiency is improved.

Drawings

Fig. 1 is a schematic structural diagram of a selenium source heating device of the present invention;

FIG. 2 is another schematic structural diagram of the selenium source heating device of the present invention;

FIG. 3 is a schematic structural view of the nozzle of the selenium source heating device of the present invention;

Fig. 4 is another schematic structural diagram of the nozzle of the selenium source heating device of the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.

In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "circumferential", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.

Fig. 1 is a schematic structural view of the selenium source heating device of the present invention, and fig. 2 is another schematic structural view of the selenium source heating device of the present invention. A selenium source heating device comprises a crucible 1, a nozzle 2, a first heating device 3 and a second heating device 4, wherein the crucible 1 is provided with a cavity, an opening is formed in the top end of the cavity, the nozzle 2 is connected with the opening, the first heating device 3 is arranged along the outer wall of the crucible 1, and the second heating device 4 is arranged along the outer wall of the nozzle 2; the heating temperature of the first heating device 3 can evaporate the selenium source, and the heating temperature of the second heating device 4 is higher than that of the first heating device 3.

the embodiment of the utility model provides an in, selenium source heating device is a crucible 1, and its appearance can be for cylindrical, oval etc. is equipped with a cavity in crucible 1 inside, and the solid-state selenium is filled to the cavity under normal atmospheric temperature. The wall of the crucible 1 is provided with a first heating device 3, wherein the first heating device 3 is a heating wire, can be arranged on the wall surface of the cavity of the crucible 1 and can also be positioned in the cavity, and the working temperature of the first heating device 3 is 200-300 ℃, so that the selenium source is cracked, and the solid selenium source is sublimated to form selenium vapor.

It should be noted that the first heating device 3 is actually located inside the crucible 1 and is not visible on the surface, and the embodiment of the present invention is wound around the crucible 1 in fig. 1 and 2 in order to clearly show the structure.

The embodiment of the utility model provides an in, 1 top of crucible is equipped with an trompil, connects the nozzle 2 with the trompil adaptation in trompil department, and the diameter of nozzle 2 is less than the diameter of crucible 1, and wherein, nozzle 2 can be for cylindrical, also can be for the cuboid, and its material can be for not taking place the titanium of chemical reaction with selenium, perhaps pottery, and technical personnel in the field can set up according to actual need, the utility model discloses do not restrict to this.

Fig. 3 is a schematic structural diagram of the second heating device 4 of the selenium source heating apparatus of the present invention, and fig. 4 is another schematic structural diagram of the second heating device 4 of the selenium source heating apparatus of the present invention. The embodiment of the utility model provides an in, set up second heating device 4 along the outer wall of nozzle 2, and not with 2 direct contact of nozzle, continuously provide the heat to the selenium source through this second heating device 4, make the temperature of 2 departments of nozzle be higher than the temperature in the crucible 1, the operating temperature of second heating device 4 can be between 400 ~ 500 ℃ to guarantee the selenium schizolysis.

In a specific implementation, the second heating device 4 may be a heating wire or a heating plate, and the selenium is further cracked by performing a second heating on the selenium vapor passing through the channel of the nozzle 2, so that the selenium is evaporated to the surface of the glass in small molecules or even monoatomic molecules and reacts with other metals to form the CIGS absorbing layer.

It should be noted that the first heating device 3 and the second heating device 4 are also connected to electrode terminals or the like, and will not be described in detail here.

In the coating by vaporization in-process, the utility model discloses first heating device 3 can heat the selenium source sublimation in crucible 1, the selenium source sublimation is behind the selenium vapour, gas rises, and from nozzle 2 process, when the selenium vapour is through nozzle 2, second heating device 4 heats the selenium vapour, make the selenium further take place the schizolysis, spout with the micromolecule or even monoatomic molecule, thereby the coating by vaporization generates the CIGS absorbed layer to glass surface and other metal reactions, greatly reduced the probability of selenium vacancy defect, improve the acceptor concentration in the absorbed layer, thereby increase carrier concentration, improve battery efficiency.

It is to be noted that, in this document, the terms "comprises", "comprising" or any other variation thereof are intended to cover a non-exclusive inclusion, so that an article or apparatus including a series of elements includes not only those elements but also other elements not explicitly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in the article or device comprising the element.

The embodiments of the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to the above-mentioned embodiments, which are only illustrative and not restrictive, and those skilled in the art can make many forms without departing from the spirit and scope of the present invention.

Claims

1. A selenium source heating apparatus, comprising: the crucible heating device comprises a crucible, a nozzle, a first heating device and a second heating device, wherein the crucible is provided with a cavity, the top end of the cavity is provided with an opening, the nozzle is connected with the opening, the first heating device is arranged along the wall of the crucible, and the second heating device is arranged along the outer wall of the nozzle;

The heating temperature of the first heating device enables the selenium source to be evaporated, and the heating temperature of the second heating device is higher than that of the first heating device.

2. A heating device as claimed in claim 1, characterized in that the first heating means are heating wires arranged around the crucible wall.

3. The heating apparatus according to claim 1, wherein the second heating means is a heating wire provided along an outer wall of the nozzle.

4. A heating device according to claim 1, wherein the second heating means is a heating plate arranged along the outer wall of the nozzle.

5. The heating device of claim 1, wherein the nozzle is made of titanium.

6. The heating device of claim 1, wherein the nozzle is made of ceramic.

7. The heating device according to claim 1, wherein the operating temperature of the first heating means is between 200 and 300 ℃.

8. The heating device according to claim 1, wherein the second heating means has an operating temperature of 400 to 500 ℃.

9. the heating device of claim 1, wherein the nozzle has a diameter smaller than a diameter of the crucible.