CN209541782U - Self-correction intelligence sensor - Google Patents
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- CN209541782U CN209541782U CN201920585724.5U CN201920585724U CN209541782U CN 209541782 U CN209541782 U CN 209541782U CN 201920585724 U CN201920585724 U CN 201920585724U CN 209541782 U CN209541782 U CN 209541782U
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- 238000012937 correction Methods 0.000 title abstract description 19
- 230000008054 signal transmission Effects 0.000 claims abstract description 38
- 239000000523 sample Substances 0.000 claims abstract description 33
- 238000002955 isolation Methods 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 13
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Abstract
The utility model discloses a kind of self-correction intelligence sensors, the self-correction intelligence sensor includes the memory that sensing probe and storage have sensor electronic data form, sensing probe includes positive signal port, negative signal port, positive supply port and negative supply port, the grounding pin of memory and the negative supply port of sensing probe connect, one I/O mouthfuls of memory are used as signal transmission port, are used for and host computer connection communication.In actual use, the information that host computer directly passes through in reading memory can be automatically performed the correction to the sensing probe to the sensor of the utility model, thus realize " plug and play " of sensor, it is time saving and energy saving.
Description
Technical Field
The utility model relates to a sensor field, concretely relates to self-correcting intelligent sensor.
Background
The sensor is a high-technology product with intensive knowledge, intensive technology and intensive skill, and the accuracy, stability and reliability of the strain sensor are greatly influenced by the manufacturing process and the manufacturing technology, so that the technical level and the quality level of the sensor are directly influenced.
The conventional sensor only provides an analog interface for converting physical quantity into electric signal, and in order to obtain correct conversion and interpretation of sensor data, configuration and correction parameters of the sensor, such as zero point compensation, zero point temperature compensation, sensitivity temperature compensation, creep compensation, nonlinear compensation, hysteresis compensation, sensitivity compensation and the like, must be manually input, so that a large amount of work is required for each use of the sensor.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a self-correcting intelligent sensor aims at solving the problem that current sensor uses at every turn and needs the more manpower of cost to accomplish the correction.
In order to achieve the above object, the utility model provides a from correcting intelligent sensor should include sensing probe and deposit the memory that has sensor electronic spreadsheet from correcting intelligent sensor, sensing probe includes positive signal port, negative signal port, positive power port and negative power port, the ground pin of memory with sensing probe's negative power port is connected, an IO mouth of memory is as signal transmission port for with the communication of upper computer link.
Preferably, the memory is 1-wire EEPROM memory.
Preferably, the self-correcting intelligent sensor further comprises a voltage-stabilizing tube, wherein the anode of the voltage-stabilizing tube is connected with the grounding pin of the memory, and the cathode of the voltage-stabilizing tube is connected with the signal transmission port of the memory.
Preferably, the self-correcting intelligent sensor further comprises a self-restoring fuse tube, and the anode of the voltage regulator tube and the grounding pin of the memory are grounded through the self-restoring fuse tube.
Preferably, the self-correcting intelligent sensor further comprises a microcontroller and a power supply module, the microcontroller is connected with the signal transmission port of the memory, and the power supply module is connected with the positive power supply port of the sensing probe and the power supply input pin of the microcontroller and used for supplying power to the sensing probe and the microcontroller.
Preferably, the self-correcting smart sensor further comprises an isolation circuit arranged between the microcontroller and the memory, wherein the isolation circuit comprises an optical coupler U3 and an optical coupler U4; wherein,
the anode of the transmitting end of the optocoupler U3 is connected with the power supply module, the cathode of the transmitting end is connected with the signal transmission port, a power supply pin of the receiving end of the optocoupler U3 is connected with the power supply module, a drain output pin of the receiving end is connected with a signal transmission pin of the microcontroller, and a grounding pin of the receiving end is grounded;
the positive pole of the emitting end of the optocoupler U4 is connected with the power supply module, the negative pole of the emitting end is connected with the signal transmission pin of the microcontroller, the power supply pin of the receiving end of the optocoupler U4 is connected with the power supply module, the drain output pin of the receiving end is connected with the signal transmission pin of the microcontroller, and the grounding pin of the receiving end is grounded.
Preferably, the signal transmission pin of the microcontroller comprises a signal input pin connected with a drain output pin of the optocoupler U3 and a signal output pin connected with a cathode of an emitting end of the optocoupler U4.
Preferably, the isolation circuit further includes a resistor R1, a resistor R2, and a resistor R3, the positive electrode of the emitting end of the optical coupler U3 is connected to the power supply module through the resistor R1, the positive electrode of the emitting end of the optical coupler U4 is connected to the power supply module through the resistor R2, and a power supply pin of the receiving end of the optical coupler U3 is connected to the drain output pin through the resistor R3.
The utility model is characterized in that a memory is connected with the sensing probe, and the memory contains electronic data forms, such as information of sensor model, serial number, sensitivity, manufacturer of last calibration date, technical specification, measurement standard and the like; and the correction parameters obtained after the performances of zero point, linearity, hysteresis, repeatability, creep, zero point temperature, sensitivity temperature and the like of the sensor are detected in the test production stage are stored by the upper computer, and the correction parameters are stored, so that when the sensor is actually used, the upper computer can automatically correct the sensing probe directly by reading the information in the memory, thereby realizing the plug-and-play of the sensor and saving time and labor.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of the self-correcting smart sensor of the present invention;
FIG. 2 is a circuit diagram of the self-correcting intelligent sensor of the present invention;
fig. 3 is a circuit diagram of an isolation circuit in an embodiment of the self-correcting smart sensor of the present invention;
fig. 4 is a circuit diagram of an isolation circuit in another embodiment of the self-correcting smart sensor of the present invention.
Detailed Description
Reference will now be made in detail to the embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same elements or elements having the same function throughout. The embodiments described below with reference to the drawings are exemplary and intended to be used for explaining the present invention, and should not be construed as limiting the present invention, and all other embodiments obtained by those skilled in the art without creative efforts based on the embodiments of the present invention belong to the protection scope of the present invention.
The utility model discloses can use the sensor of measurement class such as pressure sensor, weight sensor, temperature sensor, luminosity sensor, CO2 consistency transmitter, the measurement process of current sensor is generally for reading the signal of telecommunication that the sensing probe sensed output according to the physical quantity or the chemical quantity of testee, and this signal of telecommunication is read in order to obtain digital reading to the rethread host computer.
The common four-wire system sensor comprises a positive signal port, a negative signal port, a positive power port, a negative power port and a shielding wire, and the six-wire system sensor comprises a positive signal port, a negative signal port, a positive power port, a negative power port, a positive feedback port, a negative feedback port and a shielding wire. Which typically employs compensating resistors to adjust a wheatstone bridge within the sensor to achieve zero point compensation, zero point temperature compensation, sensitivity temperature compensation, creep temperature compensation, non-linear compensation, hysteresis compensation, and the like. The method specifically comprises the following steps: two ends of each bridge arm resistor of the Wheatstone bridge are respectively connected with a parallel branch consisting of a current meter and a switch; only one ammeter is switched on to work each time, the current corresponding to each bridge arm resistor is respectively measured, and then the resistance value of the resistor is obtained by using a formula or calculation. The correction process is complex, long in time consumption, low in efficiency, low in accuracy, difficult to operate and low in long-term stability. And due to the manufacturing process, after the strain sensor is manufactured, parameters cannot be secondarily corrected for unqualified products, and the sensor can only be scrapped.
The utility model provides a solve above-mentioned problem, as shown in FIG. 1 and FIG. 2, the utility model provides a self-correction intelligent sensor, this self-correction intelligent sensor includes sensing probe 1 and the memory U1 that has deposited the sensor spreadsheet, and sensing probe 1 includes positive SIGNAL port S +, negative SIGNAL port S-, positive power port V + and negative power port V-, memory U1 ' S ground pin GND with sensing probe 1 ' S negative power port V-is connected, and memory U1 ' S an IO mouth is as SIGNAL transmission port (like the SIGNAL shown in FIG. 2) for with the host computer connection communication.
In the embodiment, a four-wire system sensor is used as a basis for improvement, wherein the sensing probe 1 comprises a positive signal port S +, a negative signal port S-, a positive signal port V +, a negative signal port V-, a positive signal port S +, a negative signal port S-, wherein the positive signal port S +, the negative signal port S-are used for transmitting a detection signal to an upper computer, and the positive signal port V + and the negative signal port V-are used for connecting a power supply to receive a working voltage. The ground pin GND of the memory U1 is connected to the negative power port V-, which is the same external connection port (i.e., pin 1 of J1 in fig. 2 and 3) for connecting the negative terminal of the power supply. The memory U1 has a plurality of I/O ports, one of which is used as a signal transmission port for connecting and communicating with the upper computer. From the external structure, four ports of the original four-wire system sensor are changed into five ports, and for sensors of other systems, such as a six-wire system sensor, a signal transmission port is correspondingly added, namely, the N-wire system sensor is changed into an N + 1-wire system sensor.
The memory U1 is written with an electronic data sheet, which specifically comprises information conforming to the IEEE1451.4 standard, such as the model number of the sensor, the serial number, the sensitivity, the date of the last calibration, the manufacturer, the technical specification, the metering standard and the like; the method also comprises the steps of detecting the performances of zero point, linearity, hysteresis, repeatability, creep, zero point temperature, sensitivity temperature and the like of the sensor in the test production or correction stage to obtain correction parameters written in by an upper computer, and storing the correction parameters, so that when the sensor is actually used, the upper computer can automatically finish the correction of the sensing probe 1 directly by reading the information in the memory U1, thereby realizing the plug-and-play of the sensor and saving time and labor.
Furthermore, after the sensor used a definite time, because the influence of various conditions, the degree of accuracy of possible sensor can the deviation take place, the utility model discloses can mark the sensor again to only need revise the zero parameter of sensor during the calibration, the linearity can, the rethread host computer writes into memory U1 with new revise parameter, accomplishes the secondary of sensor promptly and rectifies, for the sensor that can not secondary revise, the utility model discloses greatly prolonged the life of sensor.
Preferably, the memory U1 is a 1-wire EEPROM memory.
The 1-Wire bus memory U1 adopts a very simple signaling protocol, and realizes bidirectional communication between the single chip microcomputer and the memory U1 through a common data line (i.e. a signal transmission line). Both power and data communications to and from memory U1 are accomplished via this 1-Wire line. The power supply is realized by the following modes: during data transfer, the internal capacitor of the memory U1 is charged when the bus state is high, and the device is powered by the charge stored by the capacitor when the bus state is low. A typical 1-Wire host includes an open drain I/O port and is pulled up through a resistor to a 3V to 5V supply.
The memory U1 of this embodiment is preferably of the DS2431GA type, and its memory U1 employs the 1-Wire bus protocol of the Dallas Semiconductor standard and is comprised of four pages of memory, 256 bits per page. Data is written into an 8-byte register, verified and copied to memory U1. The method is characterized in that four pages of storage areas are independent from each other, and can be independently subjected to write protection or enter an EPROM emulation mode, and the states of all bits can only be changed from 1 to 0 in the mode. The DS2431 communicates over a 1-Wire bus. The communication uses the standard 1-Wire protocol. Each device has an unalterable, unique 64-bit ROM registration number that is written to the chip by factory lithography.
Further, the memory U1 can be built in the sensor or be externally arranged outside the sensor, that is, the sensor is provided with a housing for enclosing the sensing probe 1 and the microcontroller, and the memory U1 can be selectively arranged in or outside the sensor housing due to its small external dimension, i.e., the volume of about 9 × 20 mm.
In a preferred embodiment, as shown in fig. 2, the self-correcting smart sensor further includes a voltage regulator D1, the anode of the voltage regulator D1 is connected to the ground pin GND of the memory U1, and the cathode is connected to the signal transmission port of the memory U1.
In this embodiment, the sensor operates normally when the negative power port V-is connected to the positive power supply and the positive power port V + is connected to the negative power supply. However, when the components in the sensor are spliced, the positive electrode and the negative electrode of the power supply can be mistakenly connected to the two ports of the storage U1: negative power port V- (i.e. ground pin GND) and signal transmission port, such as: when the negative power supply port V-is connected to the positive pole of the power supply and the signal transmission port is connected to the negative pole of the power supply, the voltage at the two ends of the memory U1 is clamped to a lower voltage value, such as-0.7V, due to the voltage limiting effect of the voltage regulator tube D1, and the memory U1 cannot be damaged due to overlarge negative voltage. When the signal transmission port is connected with the positive electrode of the power supply, and the negative power port V-is connected with the negative electrode of the power supply, the voltage is clamped at 4.7V by the voltage-regulator tube D1, the U1 of the memory is also prevented from working at high voltage, the voltage at two ends of the U1 of the memory is always smaller than the maximum allowable working voltage, and overload damage to the U1 of the memory is avoided.
In a preferred embodiment, as shown in fig. 2, the self-correcting smart sensor further includes a self-healing fuse PTC through which the positive electrode of the voltage regulator D1 and the ground pin GND of the memory U1 are grounded.
In this embodiment, if the voltage on the line is too high and the current exceeds the minimum blocking current of the PTC of the self-recovery safety tube, the PTC of the self-recovery safety tube blocks the current, thereby preventing the short circuit of the power supply and the passing of the current. Therefore, when the positive and negative electrodes of the power supply are mistakenly connected to two ports (a negative power supply port V and a signal transmission port) of the memory U1, the positive-going conduction current of the voltage regulator tube D1 is large, so that the PTC of the self-recovery fuse tube automatically cuts off the power supply, and the power supply is prevented from continuously supplying power to the memory U1 to cause the damage of the memory U1. When the positive power port V + of the sensing probe 1 is correctly connected to the positive electrode of the power supply and the negative power port V-is connected to the negative electrode of the power supply or grounded, the PTC (Positive temperature coefficient) of the self-recovery protective tube can be in self-recovery connection, so that the sensing probe 1 is ensured to be normally powered.
In the embodiment, the voltage-stabilizing tube D1 is preferably BZT52B series, the self-recovery fuse tube is preferably SMD0805 series PTC, and the self-recovery fuse tube can be self-recovered and can be automatically recovered for multiple use. The arrangement of the self-recovery fuse tube and the voltage regulator tube in the embodiment not only protects the memory U1, but also can self-recover to work normally when being connected correctly, thereby protecting the power supply of the sensor from being damaged.
In a preferred embodiment, as shown in fig. 3, the self-correcting smart sensor further includes a microcontroller MCU connected to the signal transmission port of the memory U1, and a power supply module connected to the positive power port V + of the sensing probe 1 and the power input pins (VDD pin and VDD1 pin in fig. 3 and 4) of the microcontroller MCU for supplying power to the sensing probe 1 and the microcontroller MCU.
In this embodiment, the microcontroller MCU is preferably a 6pin MCU with a small size, for example, a model PIC10F202, so as to save the internal space of the sensor, and the microcontroller MCU is configured to transmit the detection data acquired by the sensing probe 1 to the upper computer according to the instruction of the upper computer, and also configured to write and read data such as product information and correction parameters into and from the memory U1 according to the instruction of the upper computer, that is, the microcontroller MCU is responsible for completing external sequential operations. The power supply module is used for supplying the sensing probe 1 and the microcontroller MCU with the required working voltage.
In a preferred embodiment, as shown in fig. 3 and 4, the self-correcting smart sensor further comprises an isolation circuit arranged between the microcontroller MCU and the memory U1, wherein the isolation circuit comprises an optical coupler U3 and an optical coupler U4; wherein,
the positive electrode of the transmitting end of the optocoupler U3 is connected with the power supply module, the negative electrode of the transmitting end is connected with the signal transmission port, the power supply pin VCC of the receiving end of the optocoupler U3 is connected with the power supply module, the drain output pin V0 of the receiving end is connected with the signal transmission pin of the MCU, and the grounding pin GND of the receiving end is grounded;
the positive pole of the transmitting end of the optocoupler U4 is connected with a power supply module, the negative pole of the transmitting end is connected with a signal transmission pin of the microcontroller MCU, a power supply pin VCC of the receiving end of the optocoupler U4 is connected with the power supply module, a drain output pin V0 of the receiving end is connected with the signal transmission pin of the microcontroller MCU, and a grounding pin GND of the receiving end is grounded.
In this embodiment, the optocoupler includes a transmitting end and a receiving end, also referred to as an input end and an output end, and when the diode at the transmitting end emits light under the action of current, the receiving end receives the light and then outputs photocurrent.
The emitting end of the optocoupler U3 is a diode, the anode of the diode is connected with the power supply module to input 5V working voltage, and the cathode of the diode is connected with the SIGNAL transmission port (SIGNAL port in FIGS. 2-4) of the memory U1. The receiving end of opto-coupler U3 includes three pins: the power supply circuit comprises a power supply pin VCC, a drain output pin V0 and a ground pin GND, wherein the ground pin GND is grounded, the power supply pin VCC is connected with a power supply module to input a 3.3V working voltage, and the drain output pin V0 is connected with a SIGNAL transmission pin (i.e. SIGNAL _ IO IN FIG. 3 or SIGNAL _ IN IN FIG. 4) of the microcontroller MCU.
The positive electrode of the transmitting end of the optocoupler U4 is connected with the power supply module to input 3.3V working voltage, and the negative electrode of the optocoupler U4 is connected with a SIGNAL transmission pin (namely SIGNAL _ IO in fig. 3 or SIGNAL _ OUT in fig. 4) of the microcontroller MCU; the receiving end of opto-coupler U4 includes three pins: the power supply circuit comprises a power supply pin VCC, a drain output pin V0 and a ground pin GND, wherein the ground pin GND is grounded, the power supply pin VCC is connected with a power module to input 5V working voltage, and the drain output pin V0 and the cathode of the emission end of the optocoupler U3 are jointly connected to a SIGNAL transmission port (SIGNAL port in FIGS. 2-4) of the memory U1.
The isolation circuit has the following functions: in the stage of test production or correction, when the upper computer writes product information such as product models and technical specifications and correction parameters obtained by detecting performances such as zero point, linearity, hysteresis, repeatability, creep, zero point temperature, sensitivity temperature and the like of the sensing probe 1 into the memory U1 through the microcontroller; in the practical use of the sensor, when the upper computer reads various parameters stored in the memory U1 through the microcontroller for correction, the input and output of the two optocouplers are isolated from each other, the electrical signal transmission has the characteristic of unidirectionality, and the like, so that the single-bus transceiving of the sensor is changed into two circuits of receiving isolation and transmitting isolation, namely, the interference and noise on the MCU side of the microcontroller are isolated from the memory U1 and the sensing probe 1, and the interference of the noise and the like on the MCU side and the upper computer side is prevented from being coupled to the sensing probe 1 and the memory U1 side through the circuits to influence the normal measurement of the sensing probe 1 and the memory U1.
IN a preferred embodiment, as shown IN fig. 3 and 4, the SIGNAL transmission pins of the microcontroller MCU include a SIGNAL input pin SIGNAL _ IN connected to the drain output pin V0 of the optocoupler U3 and a SIGNAL output pin SIGNAL _ OUT connected to the cathode of the emitting terminal of the optocoupler U4, i.e., the SIGNAL transmission and reception between the microcontroller MCU and the memory U1 are respectively performed by two different IO ports on the microcontroller.
In a preferred embodiment, as shown in fig. 3 and 4, the isolation circuit further includes a resistor R1, a resistor R2, and a resistor R3, a positive electrode of an emitting end of the optical coupler U3 is connected to the power module through the resistor R1, a positive electrode of an emitting end of the optical coupler U4 is connected to the power module through the resistor R2, and a power supply pin VCC of a receiving end of the optical coupler U3 is connected to the drain output pin V0 through the resistor R3.
In this embodiment, the resistor R1 is a current-limiting resistor of the positive pole of the emitting end of the optocoupler U3, the resistor R2 is a current-limiting resistor of the positive pole of the emitting end of the optocoupler U4, and both resistors are used for preventing an excessive current input into the optocoupler, so that the problem that the optocoupler is prone to aging due to large light attenuation is solved. Meanwhile, because both the optocouplers adopt a drain-open mode, the resistor R1 is also a pull-up resistor at the receiving end of the optocoupler U4, and the resistor R3 is a pull-up resistor at the receiving end of the optocoupler U3. Preferably, the working voltages connected to the emitting end of the optocoupler U3 and the receiving end of the optocoupler U4 are both 5V, the working voltages connected to the output end of the optocoupler U3 and the output end of the optocoupler U4 are both 3.3V, and the resistors R1, R2 and R3 respectively take values of 500 Ω, 1K Ω and 5.1K Ω. The foregoing is only a part or preferred embodiment of the present invention,
no matter the characters or the drawings can not restrict the protection scope of the utility model, all with the utility model discloses a holistic design down, utilize the equivalent structure transform of what the content of the description and the drawings was done, or direct/indirect application all is included in other relevant technical field the utility model protects within the scope.
Claims (8)
1. A self-correcting intelligent sensor is characterized by comprising a sensing probe and a memory storing a sensor electronic data form, wherein the sensing probe comprises a positive signal port, a negative signal port, a positive power port and a negative power port, a grounding pin of the memory is connected with the negative power port of the sensing probe, and an I/O port of the memory is used as a signal transmission port and is used for being connected and communicated with an upper computer.
2. The self-modifying smart sensor of claim 1 wherein the memory is a 1-wire EEPROM memory.
3. The self-correcting intelligent sensor according to claim 1, further comprising a voltage regulator tube, wherein the anode of the voltage regulator tube is connected with the grounding pin of the memory, and the cathode of the voltage regulator tube is connected with the signal transmission port of the memory.
4. The self-modifying smart sensor of claim 3 further comprising a self-healing fuse, the positive electrode of the voltage regulator tube and the ground pin of the memory being grounded through the self-healing fuse.
5. The self-modifying smart sensor of claim 1 further comprising a microcontroller and a power module, wherein the microcontroller is connected to the signal transmission port of the memory, and the power module is connected to the positive power port of the sensing probe and the power input pin of the microcontroller for supplying power to the sensing probe and the microcontroller.
6. The self-modifying smart sensor of claim 5 further comprising an isolation circuit disposed between the microcontroller and the memory, the isolation circuit including an opto-coupler U3 and an opto-coupler U4; wherein,
the anode of the transmitting end of the optocoupler U3 is connected with the power supply module, the cathode of the transmitting end is connected with the signal transmission port, a power supply pin of the receiving end of the optocoupler U3 is connected with the power supply module, a drain output pin of the receiving end is connected with a signal transmission pin of the microcontroller, and a grounding pin of the receiving end is grounded;
the positive pole of the emitting end of the optocoupler U4 is connected with the power supply module, the negative pole of the emitting end is connected with the signal transmission pin of the microcontroller, the power supply pin of the receiving end of the optocoupler U4 is connected with the power supply module, the drain output pin of the receiving end is connected with the signal transmission pin of the microcontroller, and the grounding pin of the receiving end is grounded.
7. The self-modifying smart sensor of claim 6 wherein the signal transmission pins of the microcontroller include a signal input pin connected to a drain output pin of the optocoupler U3 and a signal output pin connected to a cathode of the emitter of the optocoupler U4.
8. The self-correcting intelligent sensor according to claim 6, wherein the isolation circuit further comprises a resistor R1, a resistor R2 and a resistor R3, the anode of the emitting end of the optical coupler U3 is connected with the power supply module through the resistor R1, the anode of the emitting end of the optical coupler U4 is connected with the power supply module through the resistor R2, and a power supply pin of the receiving end of the optical coupler U3 is connected with a drain output pin through the resistor R3.
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| CN201920585724.5U CN209541782U (en) | 2019-04-26 | 2019-04-26 | Self-correction intelligence sensor |
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| CN109990821A (en) * | 2019-04-26 | 2019-07-09 | 深圳市卓航自动化设备有限公司 | Self-correction intelligence sensor |
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| CN109990821A (en) * | 2019-04-26 | 2019-07-09 | 深圳市卓航自动化设备有限公司 | Self-correction intelligence sensor |
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