CN209434227U - Light emitting structure, display panel and display device - Google Patents
Light emitting structure, display panel and display device Download PDFInfo
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- CN209434227U CN209434227U CN201920586289.8U CN201920586289U CN209434227U CN 209434227 U CN209434227 U CN 209434227U CN 201920586289 U CN201920586289 U CN 201920586289U CN 209434227 U CN209434227 U CN 209434227U
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- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 10
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- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 3
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Abstract
A kind of light emitting structure, display panel and display device.The light emitting structure includes the first light-emitting component；First light-emitting component includes the first luminescent layer, the first electron transfer layer and the first cathode；First cathode contacts setting with the first electron transfer layer, and the conduction band bottom energy level of the first electron transfer layer is greater than the fermi level of the first cathode, and the range of the difference of the fermi level of the conduction band bottom energy level and the first cathode of the first electron transfer layer is in 0.3-0.6eV.The electron injection efficiency of the first light-emitting component can be suitably reduced in the light emitting structure and is matched with the hole injection efficiency of the first light-emitting component, and then improves the luminous efficiency and stability of the first light-emitting component.
Description
Technical field
Embodiment of the disclosure is related to a kind of light emitting structure, display panel and display device.
Background technique
With the continuous development of display technology, the type of display device is also more and more.Light emitting diode (Light
Emitting Diode, LED) display device due to its with self-luminous, brightness is high, operating voltage is low, small power consumption, service life are long,
Impact resistance and steady performance are widely paid close attention to by industry.Also, since light emitting display device does not need volume
Outer setting backlight module has lighter weight, to be conducive to the lightening of display device, therefore with before preferable market
Scape.
Quantum dot (Quantum Dot, QD) is a kind of novel luminescent material, has photochromic purity is high, luminescent quantum effect
The advantages that rate is high, luminescent color is adjustable, long service life becomes the research hotspot of LED luminescent material novel at present.Therefore,
Using quanta point material as luminescent layer light emitting diode with quantum dots (Quantum Dot Light Emitting Diode,
QLED) become the Main way of current New Type Display Devices research.
Utility model content
The embodiment of the present disclosure provides a kind of light emitting structure, display panel and display device.The light emitting structure includes the first hair
Optical element；First light-emitting component includes the first luminescent layer, the first electron transfer layer and the first cathode；First cathode and the first electronics
Transport layer contact setting, the conduction band bottom energy level of the first electron transfer layer are greater than the fermi level of the first cathode, the first electron-transport
The range of the difference of the fermi level of the conduction band bottom energy level and the first cathode of layer is in 0.3-0.6eV.In the light emitting structure, due to
The conduction band bottom energy level of one electron transfer layer is greater than the fermi level of the first cathode, therefore electronics is passed from the first cathode to the first electronics
Defeated layer is needed across potential barrier, and the range of the difference of the fermi level of the conduction band bottom energy level and the first cathode of the first electron transfer layer
In 0.3-0.6eV, so as to suitably reduce the electron injection efficiency of the first light-emitting component and the hole with the first light-emitting component
Injection efficiency matches, and then improves the luminous efficiency and stability of the first light-emitting component.
At least one embodiment of the disclosure provides a kind of light emitting structure comprising: the first light-emitting component, including first shine
Layer, the first electron transfer layer and the first cathode, first cathode contact setting with first electron transfer layer, and described first
The conduction band bottom energy level of electron transfer layer is greater than the fermi level of first cathode, the conduction band bottom energy of first electron transfer layer
The range of the difference of the fermi level of grade and first cathode is in 0.3-0.6eV.
For example, the material of first luminescent layer includes no cadmium amount in the light emitting structure that one embodiment of the disclosure provides
Son point material, first electron transfer layer includes ZnMgO nanoparticle, the Mole percent of Mg in first electron transfer layer
Than for 10%-20%.
For example, the material of first luminescent layer includes indium phosphide in the light emitting structure that one embodiment of the disclosure provides.
For example, in the light emitting structure that one embodiment of the disclosure provides, moles the hundred of Mg in first electron transfer layer
Divide than being 13%-16%.
For example, the light emitting structure that one embodiment of the disclosure provides further include: the second light-emitting component, including the second luminescent layer,
Second electron transfer layer and the second cathode, second cathode contact setting, first hair with second electron transfer layer
The conduction band bottom energy level of photosphere is less than the conduction band bottom energy level of second luminescent layer, the conduction band bottom energy level of first electron transfer layer
Greater than the conduction band bottom energy level of second electron transfer layer.
For example, electronics is from first cathode to first electricity in the light emitting structure that one embodiment of the disclosure provides
The potential barrier of sub- transport layer is greater than electronics from second cathode to the potential barrier of second electron transfer layer.
For example, the conduction band bottom energy level of first luminescent layer is less than in the light emitting structure that one embodiment of the disclosure provides
The conduction band bottom energy level of the conduction band bottom energy level of first electron transfer layer, second luminescent layer is greater than second electron-transport
The conduction band bottom energy level of layer, the conduction band bottom energy level substantially phase of the fermi level of second cathode and second electron transfer layer
Deng.
For example, first electron transfer layer includes ZnMgO nanometers in the light emitting structure that one embodiment of the disclosure provides
Particle, second electron transfer layer include ZnO nanoparticle or ZnMgO nanoparticle, Mg in first electron transfer layer
Molar percentage be greater than second electron transfer layer in Mg molar percentage.
For example, in the light emitting structure that one embodiment of the disclosure provides, moles the hundred of Mg in first electron transfer layer
Divide than being 10%-20%, the molar percentage of Mg is less than 5% in second electron transfer layer.
For example, in the light emitting structure that one embodiment of the disclosure provides, first luminescent layer and second luminescent layer
At least one be quantum dot light emitting layer, first cathode and the second cathode are same conductive layer.
For example, the light emitting structure that one embodiment of the disclosure provides further include: third light-emitting component, including third luminescent layer,
Third electron transfer layer and third cathode, the third cathode contact setting, the third hair with the third electron transfer layer
The conduction band bottom energy level of photosphere is greater than the conduction band bottom energy level of first luminescent layer, less than the conduction band bottom energy of second luminescent layer
Grade, the conduction band bottom energy level of the third electron transfer layer are less than the conduction band bottom energy level of first electron transfer layer, the third
The conduction band bottom energy level of electron transfer layer is greater than the conduction band bottom energy level of second electron transfer layer.
For example, electronics is from the third cathode to the third electricity in the light emitting structure that one embodiment of the disclosure provides
The potential barrier of sub- transport layer is greater than electronics from second cathode to the potential barrier of second electron transfer layer, and is less than electronics from institute
State the first cathode to first electron transfer layer potential barrier.
For example, first electron transfer layer includes ZnMgO nanometers in the light emitting structure that one embodiment of the disclosure provides
Particle, second electron transfer layer include ZnO nanoparticle or ZnMgO nanoparticle, and the third electron transfer layer includes
ZnMgO nanoparticle, the molar percentage of Mg is less than Mg in first electron transfer layer in the third electron transfer layer
Molar percentage, and it is greater than the molar percentage of Mg in second electron transfer layer.
For example, in the light emitting structure that one embodiment of the disclosure provides, moles the hundred of Mg in first electron transfer layer
Divide than being 10%-20%, the molar percentage of Mg is less than 5% in second electron transfer layer, the third electron transfer layer
The molar percentage of middle Mg is 5%-10%.
For example, in the light emitting structure that one embodiment of the disclosure provides, the electron mobility of first electron transfer layer
Less than the electron mobility of second electron transfer layer.
For example, in the light emitting structure that one embodiment of the disclosure provides, the electron mobility of the third electron transfer layer
Greater than the electron mobility of second electron transfer layer, and it is less than the electron mobility of second electron transfer layer.
For example, first luminescent layer is configured as glowing, institute in the light emitting structure that one embodiment of the disclosure provides
It states the second luminescent layer and is configured as blue light-emitting.
For example, first luminescent layer is configured as glowing, institute in the light emitting structure that one embodiment of the disclosure provides
It states the second luminescent layer and is configured as blue light-emitting, the third luminescent layer is configured as green light.
At least one embodiment of the disclosure also provides a kind of display panel, multiple light emitting structures including array setting, respectively
The light emitting structure is above-mentioned light emitting structure.
At least one embodiment of the disclosure also provides a kind of display device, including above-mentioned display panel.
Detailed description of the invention
In order to illustrate more clearly of the technical solution of the embodiment of the present disclosure, the attached drawing to embodiment is simply situated between below
It continues, it should be apparent that, the accompanying drawings in the following description merely relates to some embodiments of the present disclosure, rather than the limitation to the disclosure.
Fig. 1 is a kind of structural schematic diagram of the light emitting structure provided according to one embodiment of the disclosure；
Fig. 2 is that a kind of the first light-emitting component of the light emitting structure provided according to one embodiment of the disclosure is passed using different electronics
The electron injection efficiency of defeated layer and the comparison diagram of hole injection efficiency；
Fig. 3 is that a kind of the first light-emitting component of the light emitting structure provided according to one embodiment of the disclosure is passed using different electronics
The comparison diagram of the current efficiency of defeated layer；
Fig. 4 is different luminescent layers and different electron transfer layers in a kind of light emitting structure provided according to one embodiment of the disclosure
Energy level schematic diagram；And
Fig. 5 is different luminescent layers and different electron-transports in another light emitting structure provided according to one embodiment of the disclosure
The energy level schematic diagram of layer.
Specific embodiment
To keep the purposes, technical schemes and advantages of the embodiment of the present disclosure clearer, below in conjunction with the embodiment of the present disclosure
Attached drawing, the technical solution of the embodiment of the present disclosure is clearly and completely described.Obviously, described embodiment is this public affairs
The a part of the embodiment opened, instead of all the embodiments.Based on described embodiment of the disclosure, ordinary skill
Personnel's every other embodiment obtained under the premise of being not necessarily to creative work, belongs to the range of disclosure protection.
Unless otherwise defined, the technical term or scientific term that the disclosure uses should be tool in disclosure fields
The ordinary meaning for thering is the personage of general technical ability to be understood." first ", " second " used in the disclosure and similar word are simultaneously
Any sequence, quantity or importance are not indicated, and are used only to distinguish different component parts." comprising " or "comprising" etc.
Similar word means that the element or object before the word occur covers the element or object for appearing in the word presented hereinafter
And its it is equivalent, and it is not excluded for other elements or object.The similar word such as " connection " or " connected " is not limited to physics
Or mechanical connection, but may include electrical connection, it is either direct or indirectly.
In common QLED device, due to level of energy of quanta point material etc., red, green quantum dot light emitting layer
Electron injection efficiency is generally better than hole injection efficiency, causes the quantity of electronics in the carrier of red, green quantum dot light emitting layer big
Quantity in hole；On the contrary, the electron injection efficiency of blue quantum dot light emitting layer is weaker than hole injection efficiency, lead to amount of blue
The quantity in hole is greater than the quantity of electronics in the carrier of son point luminescent layer.Therefore, quantum dot light emitting layer in QLED device
The imbalance of electrons and holes, and the charge conversion that the imbalance of electron-hole can not only reduce injection is the ability of exciton,
Also charge can be made to accumulate in QLED device, increases the nonradiative transition of charged exciton, so that efficiency reduces and use the longevity
Life decaying, thus the bottleneck further increased as limitation QLED device efficiency and stability.
In this regard, the embodiment of the present disclosure provides a kind of light emitting structure, display panel and display device.The light emitting structure includes the
One light-emitting component；First light-emitting component includes the first luminescent layer, the first electron transfer layer and the first cathode；First cathode and first
Electron transfer layer contact setting, the conduction band bottom energy level of the first electron transfer layer are greater than the fermi level of the first cathode, the first electronics
The range of the difference of the fermi level of the conduction band bottom energy level and the first cathode of transport layer is in 0.3-0.6eV.In the light emitting structure, by
It is greater than the fermi level of the first cathode in the conduction band bottom energy level of the first electron transfer layer, therefore electronics is electric from the first cathode to first
Sub- transport layer is needed across potential barrier, and the difference of the fermi level of the conduction band bottom energy level and the first cathode of the first electron transfer layer
Range in 0.3-0.6eV, so as to suitably reduce the first light-emitting component electron injection efficiency and with the first light-emitting component
Hole injection efficiency matches, and then improves the luminous efficiency and stability of the first light-emitting component.
In the following, the light emitting structure, display panel and the display device that provide in conjunction with attached drawing the embodiment of the present disclosure are illustrated.
Fig. 1 is a kind of structural schematic diagram of the light emitting structure provided according to one embodiment of the disclosure.As shown in Figure 1, the hair
Photo structure 100 includes the first light-emitting component 110；First light-emitting component 110 includes the first luminescent layer 111, the first electron transfer layer
112 and first cathode 113；First cathode 113 contacts setting with the first electron transfer layer 112, carries out in the first light-emitting component 110
When shining, the first cathode 113 is for providing electronics.The conduction band bottom energy level of first electron transfer layer 112 is greater than the first cathode 113
The range of the difference of the fermi level of fermi level, the conduction band bottom energy level of the first electron transfer layer 112 and the first cathode 113 is in 0.3-
0.6eV。
In the light emitting structure that the embodiment of the present disclosure provides, when the electron injection efficiency of the first luminescent layer is injected better than hole
When efficiency, since the conduction band bottom energy level of the first electron transfer layer is greater than the fermi level of the first cathode, electronics is negative from first
Pole is needed to the first electron transfer layer across potential barrier, and the Fermi of the conduction band bottom energy level of the first electron transfer layer and the first cathode
The range of the difference of energy level is in 0.3-0.6eV, so as to suitably reduce the electron injection efficiency of the first light-emitting component and with first
The hole injection efficiency of light-emitting component matches, and then improves the luminous efficiency and stability of the first light-emitting component.
For example, in some instances, as shown in Figure 1, the first luminescent layer 111 and the contact setting of the first electron transfer layer 112,
That is, the first light-emitting component 110 is not provided with electron injecting layer, so as in the electronics note for reducing the first light-emitting component 110
The thickness of the first light-emitting component 110 is reduced while entering efficiency, to can provide a kind of frivolous light emitting structure.
For example, in some instances, the first luminescent layer 111 can be red quantum dot luminescent layer.Due to common amount of red
The electron injection efficiency of son point luminescent layer is generally better than hole injection efficiency, in the carrier for leading to red quantum dot luminescent layer
Hole and electronics are very uneven；And the light emitting structure that the embodiment of the present disclosure provides is by selecting suitable material to make the first electricity
The conduction band bottom energy level of sub- transport layer is greater than the fermi level of the first cathode, and the conduction band bottom energy level of the first electron transfer layer and the
The range of the difference of the fermi level of one cathode is in 0.3-0.6eV, so that the electron injection efficiency of the first light-emitting component and hole note
Enter efficiency to match, so that the luminous efficiency and stability of the first light-emitting component can be improved.
For example, in some instances, the material of the first luminescent layer 111 may include cadmium-free quantum dots material, thus reduction pair
The pollution of environment.First electron transfer layer 112 includes ZnMgO nanoparticle, that is, adulterates the ZnO nanoparticle of Mg, and first
The molar percentage of Mg is 10%-20% in electron transfer layer 112, to may make the conduction band bottom of the first electron transfer layer 112
The range of the difference of the fermi level of energy level and the first cathode 113 is in 0.3-0.6eV.
For example, in some instances, the material of the first cathode 113 can be silver or aluminium.The Fermi of first cathode 113 as a result,
The range that energy level can arrive -4.2eV -4.3.
For example, in some instances, the material of the first luminescent layer 111 may include indium phosphide (InP), the first electron transfer layer
The molar percentage of Mg is 13%-16% in 112.At this point, the conduction band bottom energy level of the first electron transfer layer 112 substantially-
3.83eV, and the fermi level range of the first cathode 113 can arrive -4.2eV for -4.3, so that the first electron transfer layer 112
Conduction band bottom energy level and the first cathode 113 fermi level difference substantially 0.37-0.47eV.At this point, the first light-emitting component 110
Luminous efficiency and stability can greatly increase.
Fig. 2 is that a kind of the first light-emitting component of the light emitting structure provided according to one embodiment of the disclosure is passed using different electronics
The electron injection efficiency of defeated layer and the comparison diagram of hole injection efficiency；Fig. 3 is a kind of hair provided according to one embodiment of the disclosure
First light-emitting component of photo structure uses the comparison diagram of the current efficiency of different electron transfer layers.First in Fig. 2 and Fig. 3 shines
Element is red quantum dot light-emitting component, and the first luminescent layer is made of indium phosphide (InP).
As shown in Fig. 2, curve 1 is the hole injection efficiency of the first light-emitting component；Curve 2 is electron transfer layer using Mg's
The electron injection efficiency of first light-emitting component of the ZnMgO nanoparticle that molar percentage is 15%；Curve 3 is electron transfer layer
Use the molar percentage of Mg for 5% ZnMgO nanoparticle the first light-emitting component electron injection efficiency；Curve 4 is electricity
Sub- transport layer uses the molar percentage of ZnO nanoparticle or Mg for 0% ZnMgO nanoparticle, i.e. ZnO nanoparticle
The electron injection efficiency of first light-emitting component.Experimental result is shown, shown in electron injection efficiency shown in curve 2 and curve 1
Hole injection efficiency more matches, and is conducive to the luminous efficiency and stability that improve the first light-emitting component.It should be noted that bent
It only includes the curve that luminescent layer and hole transmission layer measure that the hole injection efficiency of line 1, which is in the first light-emitting component,；The electricity of curve 2
It only includes the curve that luminescent layer and electron transfer layer measure that sub- injection efficiency, which is in the first light-emitting component,；The electron injection of curve 3
It only includes the curve that luminescent layer and electron transfer layer measure that efficiency, which is in the first light-emitting component,；The electron injection efficiency of curve 4 is
It only include the curve that luminescent layer and electron transfer layer measure in the first light-emitting component.
As shown in figure 3, curve 5 be electron transfer layer use the molar percentage of Mg for 15% ZnMgO nanoparticle
The current efficiency of first light-emitting component；Curve 6 be electron transfer layer use the molar percentage of Mg for 5% ZnMgO nanoparticle
The current efficiency of first light-emitting component of son；Curve 7 is electron transfer layer using ZnO nanoparticle or the molar percentage of Mg
For 0% ZnMgO nanoparticle, the i.e. current efficiency of the first light-emitting component of ZnO nanoparticle.Experimental result shows, curve 5
Shown in the current efficiency of the first light-emitting component be apparently higher than curve 6 and curve 7；Also, with mentioning for the molar percentage of Mg
Height, the current efficiency of the first light-emitting component shown in curve 5 and non-linear raising, but mutate, it is much higher than 6 He of curve
Curve 7.As a result, when electron transfer layer uses the molar percentage of Mg as 15% ZnMgO nanoparticle, the first light-emitting component
Current efficiency with higher.It should be noted that other films of the first light-emitting component shown in curve 5, curve 6 and curve 7
Layer (for example, hole transmission layer etc.) is all made of identical material and structure.
For example, in some instances, as shown in Figure 1, the first light-emitting component 110 further includes the first hole transmission layer 114,
One hole injection layer 115 and the first anode 116.First hole transmission layer 114 is arranged in the first luminescent layer 111 far from the first electronics
One of the first hole transmission layer 114 far from the first luminescent layer 111 is arranged in the side of transport layer 112, the first hole injection layer 115
Side of first hole injection layer 115 far from the first hole transmission layer 114 is arranged in side, the first anode 116.
For example, transparent conductive oxide or conducting polymer can be used in the first anode 116, transparent conductive oxide can be
Tin indium oxide (ITO), FTO (SnO2) etc..In addition, the material of the first hole transmission layer 114 and the first hole injection layer 115 can root
It is selected according to actual conditions, this is not restricted for the embodiment of the present disclosure.
For example, in some instances, as shown in Figure 1, the light emitting structure further includes underlay substrate 101, it is above-mentioned for carrying
The first light-emitting component 110.For example, underlay substrate 101 can be transparent substrate, for example, glass substrate, quartz base plate, plastics base
Plate etc..Underlay substrate 101 can also be flexible transparent substrate, for example, poly terephthalic acid class plastics (PET) substrate.
For example, in some instances, as shown in Figure 1, the light emitting structure 100 further includes the second light-emitting component 120；First hair
Optical element 110 and the second light-emitting component 120 can be used for issuing the light of different colours.Second light-emitting component 120 includes second luminous
The 121, second electron transfer layer 122 of layer and the second cathode 123.Second cathode 123 contacts setting with the second electron transfer layer 122,
The conduction band bottom energy level of first luminescent layer 111 less than the conduction band bottom energy level of the second luminescent layer 121, lead by the first electron transfer layer 112
It is greater than the conduction band bottom energy level of the second electron transfer layer 122 with bottom energy level.
In the light emitting structure that the example provides, different light-emitting components (such as the first light-emitting component and the second luminous member
Part) using the electron transfer layer of different materials production.Since the conduction band bottom energy level of the first luminescent layer 111 is less than the second luminescent layer
121 conduction band bottom energy level, electronics are less than electronics from the second electricity from the difficulty of first the 112 to the first luminescent layer of electron transfer layer 111
The difficulty of sub- the 122 to the second luminescent layer of transport layer 121, at this point, the conduction band bottom energy level due to the first electron transfer layer 112 is greater than the
The conduction band bottom energy level of two electron transfer layers 122, when the fermi level of the first cathode 113 and the second cathode 123 is roughly the same, electricity
Son is greater than electronics from second the 123 to the second electron transfer layer of cathode 122 from the potential barrier of first the 113 to the first transport layer of cathode 112
Potential barrier, so that the efficiency of the first luminescent layer of electron injection 111 is reduced to a certain extent, thus with the first luminescent layer 111
In hole injection efficiency reach balance；Also, since the conduction band bottom energy level of the first electron transfer layer 112 is passed greater than the second electronics
The conduction band bottom energy level of defeated layer 122, the light emitting structure which provides can also reduce electronics and pass from second the 123 to the second electronics of cathode
The potential barrier of defeated layer 122 improves the efficiency of the second luminescent layer of electron injection 121 to a certain extent, thus with the second luminescent layer
Hole injection efficiency in 121 reaches balance, and then improves the first light-emitting component 110 and the second light-emitting component 120 simultaneously
Luminous efficiency and stability.
For example, in some instances, the first cathode 113 and the second cathode 123 are same conductive layer, i.e. the first light-emitting component
110 and 120 common cathode layer of the second light-emitting component.At this point, gesture of the electronics from first the 113 to the first electron transfer layer of cathode 112
It builds and is greater than potential barrier of the electronics from second the 123 to the second electron transfer layer of cathode 122.
Fig. 4 is different luminescent layers and different electron transfer layers in a kind of light emitting structure provided according to one embodiment of the disclosure
Energy level schematic diagram.As shown in figure 4, conduction band bottom of the conduction band bottom energy level of the first luminescent layer 111 less than the first electron transfer layer 112
Energy level, the conduction band bottom energy level of the second luminescent layer 121 are greater than the conduction band bottom energy level of the second electron transfer layer 122, that is to say, that electronics
Potential barrier is not present or there's almost no from first the 112 to the first luminescent layer of electron transfer layer 111, and electronics is from the second electron-transport
The 122 to the second luminescent layer 121 of layer is needed across potential barrier.At this point, the fermi level and the second electron transfer layer of the second cathode 123
122 conduction band bottom energy level is roughly equal, that is to say, that electronics be not present from second the 123 to the second electron transfer layer of cathode 122 or
It there's almost no potential barrier.The light emitting structure can improve electronics from second the 123 to the second luminescent layer of cathode to a certain extent as a result,
121 electron injection efficiency, to reach balance with the hole injection efficiency in the second luminescent layer 121, to improve the second hair
The luminous efficiency and stability of optical element 120.It should be noted that the fermi level of the second above-mentioned cathode and the second electronics pass
The conduction band bottom energy level of the roughly equal fermi level for referring to the second cathode of conduction band bottom energy level and the second electron transfer layer of defeated layer
The proportional region of the absolute value of the fermi level of difference and the second cathode is within 4%.
For example, in some instances, the first electron transfer layer 112 includes ZnMgO nanoparticle, the second electron transfer layer
122 include ZnO nanoparticle or ZnMgO nanoparticle, and the molar percentage of Mg is greater than the second electricity in the first electron transfer layer 112
The molar percentage of Mg in sub- transport layer 122.
For example, in some instances, the molar percentage of Mg is 10%-20%, the second electricity in the first electron transfer layer 112
The molar percentage of Mg is less than 5% in sub- transport layer 122.It should be noted that when the second electron transfer layer 122 is ZnO nano
When particle, it is believed that the ZnMgO nanoparticle that the molar percentage that the second electron transfer layer 122 is Mg is 0.
Table 1 is a kind of energy level tables of data of the electron transfer layer provided according to one embodiment of the disclosure.In table 1, first
Electron transfer layer 112 is the ZnMgO nanoparticle that the molar percentage of Mg is 15%, and the second electron transfer layer 122 is rubbing for Mg
The ZnMgO nanoparticle that your percentage is 0%.As it can be seen that the conduction band bottom energy level of the first electron transfer layer 112 is passed greater than the second electronics
The conduction band bottom energy level of defeated layer 122.When the fermi level range of the first cathode 113 and the second cathode 123 is -4.3 to -4.2eV,
The difference substantially 0.37-0.47eV of the fermi level of the conduction band bottom energy level of first electron transfer layer 112 and the first cathode 113, the
The difference of the fermi level of the conduction band bottom energy level of two electron transfer layers 122 and the second cathode 123 is less than 0.1eV.The light-emitting junction as a result,
Structure can reduce the efficiency of the first luminescent layer of electron injection 111 to a certain extent, thus with the hole in the first luminescent layer 111
Injection efficiency reaches balance；And the efficiency for improving the second luminescent layer of electron injection 121 to a certain extent, thus with second
Hole injection efficiency in luminescent layer 121 reaches balance.
The energy level tables of data of table 1- electron transfer layer
For example, in some instances, the electron mobility of the first electron transfer layer 112 is less than the second electron transfer layer 122
Electron mobility, to also reduce the efficiency of the first luminescent layer of electron injection 111 to a certain extent, thus with the first hair
Hole injection efficiency in photosphere 111 reaches balance；And the second luminescent layer of electron injection 121 is improved to a certain extent
Efficiency, to reach balance with the hole injection efficiency in the second luminescent layer 121.For example, when the first electron transfer layer 112 is Mg
Molar percentage be 15% ZnMgO nanoparticle, the molar percentage that the second electron transfer layer 122 is Mg is 0%
When ZnMgO nanoparticle, the electron transfer of the electron mobility of the first electron transfer layer 112 less than the second electron transfer layer 122
Rate.
For example, in some instances, at least one the first luminescent layer and the second luminescent layer are quantum dot light emitting layer.For example,
First luminescent layer can be red quantum dot luminescent layer, and the second luminescent layer can be blue quantum dot light emitting layer；First luminescent layer can be adopted
With red cadmium-free quantum dots luminescent material, for example, indium phosphide (InP), such as InP/ZnS core-shell quanta dots material；Second shines
Blue quantum dot luminescent material can be used in layer, for example, cadmium selenide (CdSe), such as CdSe/ZnS core-shell quanta dots material.
For example, in some instances, as shown in Figure 1, the second light-emitting component 120 further includes the second hole transmission layer 124,
Two hole injection layers 125 and second plate 116.Second hole transmission layer 124 is arranged in the second luminescent layer 121 far from the second electronics
One of the second hole transmission layer 124 far from the second luminescent layer 121 is arranged in the side of transport layer 122, the second hole injection layer 125
Side of second hole injection layer 125 far from the second hole transmission layer 124 is arranged in side, second plate 126.
For example, transparent conductive oxide or conducting polymer can be used in second plate 126, transparent conductive oxide can be
Tin indium oxide (ITO), FTO (SnO2) etc..In addition, the material of the second hole transmission layer 124 and the second hole injection layer 125 can root
It is selected according to actual conditions, this is not restricted for the embodiment of the present disclosure.
For example, in some instances, as shown in Figure 1, the first light-emitting component 110 and the setting of 120 same layer of the second light-emitting component
On underlay substrate 101.That is, the second of the first anode 116 of the first light-emitting component 110 and the second light-emitting component 120
Anode 126 can same layer setting；First hole injection layer 115 of the first light-emitting component 110 and the second sky of the second light-emitting component 120
Cave implanted layer 125 can same layer setting；The of first hole transmission layer 114 of the first light-emitting component 110 and the second light-emitting component 120
Two hole transmission layers 124 can same layer setting；The of first luminescent layer 111 of the first light-emitting component 110 and the second light-emitting component 120
Two luminescent layers 121 can same layer setting；The of first electron transfer layer 112 of the first light-emitting component 110 and the second light-emitting component 120
Two electron transfer layers 122 can same layer setting.It should be noted that the first hole injection layer 115 and the second hole injection layer 125 can
Different thickness is selected according to the actual situation；First hole transmission layer 114 and the second hole transmission layer 124 can be according to the actual situation
Select different thickness.
For example, since identical material production can be used in the first anode 116 and second plate 126, the first anode
116 and second plate 126 same conductive layer pattern can be used and formed.
For example, underlay substrate 101 can be transparent substrate, for example, glass substrate, quartz base plate, plastic base etc..Substrate base
Plate 101 can also be flexible transparent substrate, for example, poly terephthalic acid class plastics (PET) substrate.
For example, in some instances, as shown in Figure 1, the light emitting structure 100 further includes third light-emitting component 130；Third hair
Optical element 130 includes third luminescent layer 131, third electron transfer layer 132 and third cathode 133.Third cathode 133 and third electricity
The sub- contact of transport layer 132 setting, the conduction band bottom energy level of third luminescent layer 131 is greater than the conduction band bottom energy level of the first luminescent layer 111, small
In the conduction band bottom energy level of the second luminescent layer 121, the conduction band bottom energy level of third electron transfer layer 132 is less than the first electron transfer layer
112 conduction band bottom energy level, the conduction band bottom energy level of third electron transfer layer 132 are greater than the conduction band bottom energy of the second electron transfer layer 122
Grade.
In the light emitting structure that the example provides, different light-emitting components (such as the first light-emitting component and the second luminous member
Part) using the electron transfer layer of different materials.Since the conduction band bottom energy level of third luminescent layer 131 is greater than the first luminescent layer 111
Conduction band bottom energy level, less than the conduction band bottom energy level of the second luminescent layer 121, i.e., the conduction band bottom energy level of third luminescent layer 131 is between first
Between luminescent layer 111 and the second luminescent layer 121, electronics is also situated between from third electron transfer layer 132 to the difficulty of third luminescent layer 131
In electronics from the difficulty of first the 112 to the first luminescent layer of electron transfer layer 111 and electronics from the second electron transfer layer 122 to the second
Between the difficulty of luminescent layer 121, at this point, since the conduction band bottom energy level of third electron transfer layer 132 is less than the first electron transfer layer
112 conduction band bottom energy level, and it is greater than the conduction band bottom energy level of the second electron transfer layer 122, when the first cathode 113, the second cathode 123
When roughly the same with the fermi level of third cathode 133, electronics is less than from third cathode 133 to the potential barrier of third transport layer 132
Electronics is greater than electronics from second the 123 to the second electronics of cathode from the potential barrier of first the 113 to the first electron transfer layer of cathode 112
The potential barrier of transport layer 122, so that the efficiency of electron injection third luminescent layer 131 is reduced to a certain extent, thus and third
Hole injection efficiency in luminescent layer 131 reaches balance, and then can improve the first light-emitting component 110, the second light-emitting component simultaneously
120 and third light-emitting component 130 luminous efficiency and stability.
For example, in some instances, the first cathode 113, the second cathode 123 and third cathode 133 are same conductive layer, i.e.,
130 common cathode layer of first light-emitting component 110, the second light-emitting component 120 and third light-emitting component.Electronics is from third cathode 133
Potential barrier to third electron transfer layer 132 is greater than potential barrier of the electronics from second the 123 to the second electron transfer layer of cathode 122, and small
In electronics from the potential barrier of first the 113 to the first electron transfer layer of cathode 112.
Fig. 5 is different luminescent layers and different electron-transports in another light emitting structure provided according to one embodiment of the disclosure
The energy level schematic diagram of layer.As shown in figure 5, conduction band of the conduction band bottom energy level of the first luminescent layer 111 less than the first electron transfer layer 112
Bottom energy level, the conduction band bottom energy level of the second luminescent layer 121 are greater than the conduction band bottom energy level of the second electron transfer layer 122, third luminescent layer
131 conduction band bottom energy level is slightly larger than the conduction band bottom energy level of third electron transfer layer 132.That is, electronics is passed from the first electronics
Defeated the 112 to the first luminescent layer of layer 111 is not present or there's almost no potential barrier, and electronics is sent out from the second electron transfer layer 122 to the second
Photosphere 121 is needed across biggish potential barrier (relative to third light-emitting component), and electronics is sent out from third electron transfer layer 132 to third
Photosphere 131 is needed across lesser potential barrier.At this point, electronics from the potential barrier of first the 113 to the first electron transfer layer of cathode 112 compared with
Greatly, electronics is not present or there's almost no potential barrier from second the 123 to the second electron transfer layer of cathode 122, and electronics is from third cathode
The potential barrier of 133 to third electron transfer layer 132 is smaller.The light emitting structure, which can be improved significantly, as a result, reduces electronics from the first yin
The electron injection efficiency of the 113 to the first luminescent layer of pole 111 reduces electronics from third cathode 133 to third luminescent layer 131 smaller
Electron injection efficiency, and electron injection efficiency of the electronics from second the 123 to the second luminescent layer of cathode 121 is improved, thus together
When make the hole-electron injection efficiency in the first luminescent layer 111, the second luminescent layer 121 and third luminescent layer 131 reach flat
Weighing apparatus, to improve the luminous efficiency and stability of the light emitting structure.
For example, in some instances, the first electron transfer layer 112 includes ZnMgO nanoparticle, the second electron transfer layer
122 include ZnO nanoparticle or ZnMgO nanoparticle, and third electron transfer layer 132 includes ZnMgO nanoparticle, third electronics
Molar percentage of the molar percentage of Mg less than Mg in the first electron transfer layer 112 in transport layer 132, and it is greater than the second electronics
The molar percentage of Mg in transport layer 122.
For example, in some instances, the molar percentage of Mg is 10%-20%, the second electricity in the first electron transfer layer 112
The molar percentage of Mg is less than 5% in sub- transport layer 122, and the molar percentage of Mg is 5%- in third electron transfer layer 132
10%.It should be noted that when the second electron transfer layer 122 is ZnO nanoparticle, it is believed that the second electron transfer layer 122
The ZnMgO nanoparticle that molar percentage for Mg is 0.
Table 2 is the energy level tables of data of another electron transfer layer provided according to one embodiment of the disclosure.In table 2, the
The ZnMgO nanoparticle that the molar percentage that one electron transfer layer 112 is Mg is 15%, the second electron transfer layer 122 are Mg's
The ZnMgO nanoparticle that molar percentage is 0%, third electron transfer layer 132 is the ZnMgO that the molar percentage of Mg is 5%
Nanoparticle.As it can be seen that the conduction band bottom energy level of the first electron transfer layer 112 is greater than the conduction band bottom energy level of third electron transfer layer 132,
The conduction band bottom energy level of third electron transfer layer 132 is greater than the conduction band bottom energy level of the second electron transfer layer 122.When the first cathode 113,
When the fermi level range of second cathode 123 and third cathode 133 is -4.3 to -4.2eV, the first electron transfer layer 112 is led
The difference substantially 0.37-0.47eV of fermi level with bottom energy level and the first cathode 113, the conduction band of the second electron transfer layer 122
The difference of the fermi level of bottom energy level and the second cathode 123 is less than 0.1eV, the conduction band bottom energy level of third electron transfer layer 132 and the
The difference of the fermi level of three cathodes 133 is less than 0.2eV.The light emitting structure can reduce electron injection to a certain extent as a result,
The efficiency of first luminescent layer 111, to reach balance with the hole injection efficiency in the first luminescent layer 111, to a certain extent
The efficiency of the second luminescent layer of electron injection 121 is improved, to reach flat with the hole injection efficiency in the second luminescent layer 121
Weighing apparatus, and the efficiency of electron injection third luminescent layer 131 is reduced to a certain extent, thus with third luminescent layer 131
Hole injection efficiency reaches balance.
The energy level tables of data of table 2- electron transfer layer
For example, in some instances, the electron mobility of third electron transfer layer 132 is greater than the second electron transfer layer 122
Electron mobility, and less than the electron mobility of the second electron transfer layer 112.The light emitting structure can be further as a result,
Significantly improve reduce electron injection efficiency of the electronics from first the 113 to the first luminescent layer of cathode 111, smaller reduce electronics from
Third cathode 133 arrives the electron injection efficiency of third luminescent layer 131, and improves electronics and shine from the second cathode 123 to the second
The electron injection efficiency of layer 121, to make in the first luminescent layer 111, the second luminescent layer 121 and third luminescent layer 131 simultaneously
Hole-electron injection efficiency reach balance, to improve the luminous efficiency and stability of the light emitting structure.
For example, work as the ZnMgO nanoparticle that the molar percentage that the first electron transfer layer 112 is Mg is 15%, the second electricity
The ZnMgO nanoparticle that the molar percentage that sub- transport layer 122 is Mg is 0%, third electron transfer layer 132 are moles the hundred of Mg
When dividing the ZnMgO nanoparticle than being 5%, the electron mobility of third electron transfer layer 132 is greater than the second electron transfer layer 122
Electron mobility, and less than the electron mobility of the second electron transfer layer 112.
For example, in some instances, the first luminescent layer can be red quantum dot luminescent layer, and the second luminescent layer can be amount of blue
Son point luminescent layer, third luminescent layer are green quantum dot light emitting layer；The luminous material of red cadmium-free quantum dots can be used in first luminescent layer
Material, for example, indium phosphide (InP), such as InP/ZnS core-shell quanta dots material；Blue quantum dot light emitting can be used in second luminescent layer
Material, for example, cadmium selenide (CdSe), such as CdSe/ZnS core-shell quanta dots material；Green can be used without cadmium amount in third luminescent layer
Son point luminescent material, for example, indium phosphide (InP), such as InP/ZnS core-shell quanta dots material.
For example, in some instances, as shown in Figure 1, third light-emitting component 130 further includes third hole transmission layer 134,
Three hole injection layers 135 and third anode 136.Third hole transmission layer 134 is arranged in third luminescent layer 131 far from third electronics
One of third hole transmission layer 134 far from third luminescent layer 131 is arranged in the side of transport layer 132, third hole injection layer 135
Side of the third hole injection layer 135 far from third hole transmission layer 134 is arranged in side, third anode 136.
For example, transparent conductive oxide or conducting polymer can be used in third anode 136, transparent conductive oxide can be
Tin indium oxide (ITO), FTO (SnO2) etc..In addition, the material of third hole transmission layer 134 and third hole injection layer 135 can root
It is selected according to actual conditions, this is not restricted for the embodiment of the present disclosure.
For example, in some instances, as shown in Figure 1, the first light-emitting component 110, the second light-emitting component 120 and third shine
Element 130 can same layer be arranged on underlay substrate 101.That is, the first anode 116, second of the first light-emitting component 110 is sent out
The second plate 126 of optical element 120 and the third anode 136 of third light-emitting component 130 can same layer settings；First light-emitting component
110 the first hole injection layer 115, the second hole injection layer 125 of the second light-emitting component 120 and third light-emitting component 130
Third hole injection layer 135 can same layer setting；The first hole transmission layer 114, the second light-emitting component of first light-emitting component 110
The third hole transmission layer 134 of 120 the second hole transmission layer 124 and third light-emitting component 130 can same layer setting；First shines
The third of first luminescent layer 111 of element 110, the second luminescent layer 121 and third light-emitting component 130 of the second light-emitting component 120
Luminescent layer 131 can same layer setting；The second of first electron transfer layer 112 of the first light-emitting component 110, the second light-emitting component 120
The third electron transfer layer 132 of electron transfer layer 122 and third light-emitting component 130 can same layer setting.It should be noted that first
Hole injection layer 115, the second hole injection layer 125 and third hole injection layer 135 can select different thickness according to the actual situation
Degree；First hole transmission layer 114, the second hole transmission layer 124 and third hole transmission layer 134 can select according to the actual situation not
Same thickness.
For example, since identical material production can be used in the first anode 116, second plate 126 and third anode 127, because
This, the first anode 116, second plate 126 and third anode 137 can be used same conductive layer pattern and formed.
For example, underlay substrate 101 can be transparent substrate, for example, glass substrate, quartz base plate, plastic base etc..Substrate base
Plate 101 can also be flexible transparent substrate, for example, poly terephthalic acid class plastics (PET) substrate.
For example, as shown in Figure 1, the light emitting structure 100 further includes between different light-emitting components (for example, first shines
Between element 110 and the second light-emitting component 120, between the second light-emitting component 120 and third light-emitting component 130, third shines first
Between part 130 and the first light-emitting component 110) pixel confining layer 180.
At least one embodiment of the disclosure provides a kind of production method of light emitting structure.The production method includes the following steps
S201-S205。
Step S201: the first anode, second plate and third anode are formed on underlay substrate.
For example, deposition method can be used forms anode layer on underlay substrate, then patterning anode layer forms the first sun
Pole, second plate and third anode；Underlay substrate can be transparent substrate, for example, glass substrate, quartz base plate, plastic base etc.；
Transparent conductive oxide or conducting polymer can be used in anode layer, and transparent conductive oxide can be tin indium oxide (ITO), FTO
(SnO2) etc..
Step S202: first is respectively formed far from the side of underlay substrate in the first anode, second plate and third anode
Hole injection layer, the second hole injection layer and third hole injection layer.
For example, the mode that inkjet printing or nano impression can be used is remote in the first anode, second plate and third anode
Side from underlay substrate is respectively formed the first hole injection layer, the second hole injection layer and third hole injection layer.First is empty
The material of cave implanted layer, the second hole injection layer and third hole injection layer can be organic hole injection material, such as: PEDOT:
PSS (poly- (3,4-rthylene dioxythiophene)-polystyrolsulfon acid) or inorganic oxide, such as molybdenum oxide (MoOx).
Step S203: in the first hole injection layer, the second hole injection layer and third hole injection layer far from underlay substrate
A survey be respectively formed the first hole transmission layer, the second hole transmission layer and third hole transmission layer.
For example, the first hole transmission layer, the second hole transmission layer and third hole transmission layer can transmit material for organic hole
Material, for example, PVK (polyvinylcarbazole), TFB (poly- (9,9- dioctyl fluorene-CO-N- (4- butyl phenyl) diphenylamines)) and TPD (N,
N '-diphenyl-N, N '-bis (3-methyllphenyl)-(1,1 '-biphenyl) -4,4 '-diamine) and its it is derivative
Object or inorganic hole transporter, such as nickel oxide (NiOx) and vanadium oxide (VOx).
Step S204: in the first hole transmission layer, the second hole transmission layer and third hole transmission layer far from underlay substrate
Side be respectively formed the first luminescent layer, the second luminescent layer and third luminescent layer.
Step S205: shape is distinguished far from the side of underlay substrate in the first luminescent layer, the second luminescent layer and third luminescent layer
At the first electron transfer layer, the second electron transfer layer and third electron transfer layer.
For example, the ZnMgO nanoparticle that the molar percentage that the first electron transfer layer is Mg is 10%-20%, the second electricity
Sub- transport layer is ZnMgO nanoparticle of the molar percentage less than 5% of Mg, and third electron transfer layer is the molar percentage of Mg
For the ZnMgO nanoparticle of 5%-10%.
Step S206: in the first electron transfer layer, the second electron transfer layer and third electron transfer layer far from underlay substrate
Side formed cathode layer.
For example, the mode of vapor deposition can be used in the first electron transfer layer, the second electron transfer layer and third electron transfer layer
Side far from underlay substrate forms cathode layer；The material of cathode layer can be aluminium or silver；The thickness range of cathode layer can be 100-
150 nanometers.
At least one embodiment of the disclosure also provides a kind of display panel.The display panel includes multiple hairs of array setting
Photo structure 100, the light emitting structure are light emitting structure provided by the above embodiment.The display panel can suitably reduce by as a result,
The electron injection efficiency of one light-emitting component simultaneously matches with the hole injection efficiency of the first light-emitting component, and then improves first and shine
The luminous efficiency and stability of element.Also, when the display panel uses difference using different light-emitting components in above-described embodiment
Electron transfer layer light emitting structure when, which can improve the first light-emitting component, the second light-emitting component and third simultaneously
The luminous efficiency and stability of light-emitting component, for details, reference can be made to the specific descriptions of the embodiment of light emitting structure.
At least one embodiment of the disclosure also provides a kind of display device, including display panel provided by the above embodiment.
The display panel can suitably reduce the electron injection efficiency of the first light-emitting component and infuse with the hole of the first light-emitting component as a result,
Enter efficiency to match, and then improves the luminous efficiency and stability of the first light-emitting component.Also, when the display panel is using above-mentioned
When different light-emitting components use the light emitting structure of different electron transfer layers in embodiment, which can improve first simultaneously
The luminous efficiency and stability of light-emitting component, the second light-emitting component and third light-emitting component, for details, reference can be made to the realities of light emitting structure
Apply the specific descriptions of example.
For example, in some instances, which can be smart phone, tablet computer, television set, display, pen
Remember any products or components having a display function such as this computer, Digital Frame, navigator.
There is the following to need to illustrate:
(1) in embodiment of the present disclosure attached drawing, the structure being related to the embodiment of the present disclosure is related only to, other structures can join
It examines and is commonly designed.
(2) in the absence of conflict, the feature in disclosure the same embodiment and different embodiment can be combined with each other.
More than, the only specific embodiment of the disclosure, but the protection scope of the disclosure is not limited thereto, and it is any to be familiar with
Those skilled in the art can easily think of the change or the replacement in the technical scope that the disclosure discloses, and should all cover
Within the protection scope of the disclosure.Therefore, the protection scope of the disclosure should be subject to the protection scope in claims.
Claims (20)
1. a kind of light emitting structure characterized by comprising
First light-emitting component, including the first luminescent layer, the first electron transfer layer and the first cathode,
Wherein, first cathode contacts setting, the conduction band bottom of first electron transfer layer with first electron transfer layer
Energy level is greater than the fermi level of first cathode, the conduction band bottom energy level of first electron transfer layer and first cathode
The range of the difference of fermi level is in 0.3-0.6eV.
2. light emitting structure according to claim 1, which is characterized in that the conduction band bottom energy level of first luminescent layer is less than institute
The conduction band bottom energy level of the first electron transfer layer is stated, first electron transfer layer includes ZnMgO nanoparticle, first electronics
The molar percentage of Mg is 10%-20% in transport layer.
3. light emitting structure according to claim 2, which is characterized in that the Mole percent of Mg in first electron transfer layer
Than for 13%-16%.
4. light emitting structure according to claim 2, which is characterized in that the material of first luminescent layer includes red without cadmium
Quanta point material.
5. light emitting structure according to claim 4, which is characterized in that the material of first luminescent layer includes indium phosphide.
6. light emitting structure according to claim 1, which is characterized in that further include:
Second light-emitting component, including the second luminescent layer, the second electron transfer layer and the second cathode,
Wherein, second cathode contacts setting, the conduction band bottom energy level of first luminescent layer with second electron transfer layer
Less than the conduction band bottom energy level of second luminescent layer, the conduction band bottom energy level of first electron transfer layer is greater than second electronics
The conduction band bottom energy level of transport layer.
7. light emitting structure according to claim 6, which is characterized in that electronics is from first cathode to first electronics
The potential barrier of transport layer is greater than electronics from second cathode to the potential barrier of second electron transfer layer.
8. light emitting structure according to claim 6, which is characterized in that the conduction band bottom energy level of first luminescent layer is less than institute
The conduction band bottom energy level of the first electron transfer layer is stated, the conduction band bottom energy level of second luminescent layer is greater than second electron transfer layer
Conduction band bottom energy level, the fermi level of second cathode and the conduction band bottom energy level of second electron transfer layer are roughly equal.
9. light emitting structure a method according to any one of claims 6-8, which is characterized in that first electron transfer layer includes
ZnMgO nanoparticle, second electron transfer layer include ZnO nanoparticle or ZnMgO nanoparticle, and first electronics passes
The molar percentage of Mg is greater than the molar percentage of Mg in second electron transfer layer in defeated layer.
10. light emitting structure according to claim 9, which is characterized in that moles the hundred of Mg in first electron transfer layer
Divide than being 10%-20%, the molar percentage of Mg is less than 5% in second electron transfer layer.
11. light emitting structure a method according to any one of claims 6-8, which is characterized in that first luminescent layer and described
At least one second luminescent layer is quantum dot light emitting layer, and first cathode and the second cathode are same conductive layer.
12. light emitting structure a method according to any one of claims 6-8, which is characterized in that further include:
Third light-emitting component, including third luminescent layer, third electron transfer layer and third cathode,
Wherein, the third cathode contacts setting, the conduction band bottom energy level of the third luminescent layer with the third electron transfer layer
Greater than the conduction band bottom energy level of first luminescent layer, less than the conduction band bottom energy level of second luminescent layer, the third electronics is passed
The conduction band bottom energy level of defeated layer is less than the conduction band bottom energy level of first electron transfer layer, the conduction band bottom of the third electron transfer layer
Energy level is greater than the conduction band bottom energy level of second electron transfer layer.
13. light emitting structure according to claim 12, which is characterized in that electronics is from the third cathode to the third electricity
The potential barrier of sub- transport layer is greater than electronics from second cathode to the potential barrier of second electron transfer layer, and is less than electronics from institute
State the first cathode to first electron transfer layer potential barrier.
14. light emitting structure according to claim 12, which is characterized in that first electron transfer layer includes that ZnMgO receives
Rice corpuscles, second electron transfer layer include ZnO nanoparticle or ZnMgO nanoparticle, the third electron transfer layer packet
ZnMgO nanoparticle is included, the molar percentage of Mg is less than Mg in first electron transfer layer in the third electron transfer layer
Molar percentage, and be greater than second electron transfer layer in Mg molar percentage.
15. light emitting structure according to claim 14, which is characterized in that moles the hundred of Mg in first electron transfer layer
Divide than being 10%-20%, the molar percentage of Mg is less than 5% in second electron transfer layer, the third electron transfer layer
The molar percentage of middle Mg is 5%-10%.
16. light emitting structure a method according to any one of claims 6-8, which is characterized in that first electron transfer layer
Electron mobility is less than the electron mobility of second electron transfer layer.
17. light emitting structure according to claim 12, which is characterized in that the electron mobility of the third electron transfer layer
Greater than the electron mobility of second electron transfer layer, and it is less than the electron mobility of second electron transfer layer.
18. light emitting structure a method according to any one of claims 6-8, which is characterized in that first luminescent layer is configured
To glow, second luminescent layer is configured as blue light-emitting.
19. a kind of display panel, which is characterized in that multiple light emitting structures including array setting,
Wherein, each light emitting structure is the light emitting structure according to any one of claim 1-18.
20. a kind of display device, which is characterized in that including display panel according to claim 19.
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| CN111129332A (en) * | 2019-12-31 | 2020-05-08 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel |
| WO2020215882A1 (en) * | 2019-04-26 | 2020-10-29 | 京东方科技集团股份有限公司 | Light-emitting structure, display panel and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020215882A1 (en) * | 2019-04-26 | 2020-10-29 | 京东方科技集团股份有限公司 | Light-emitting structure, display panel and display device |
| CN111129332A (en) * | 2019-12-31 | 2020-05-08 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel |
| WO2021134830A1 (en) * | 2019-12-31 | 2021-07-08 | 深圳市华星光电半导体显示技术有限公司 | Oled display panel and display apparatus |
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