CN209312775U - A kind of field-effect tube with self-aligned gate electrode structure - Google Patents
A kind of field-effect tube with self-aligned gate electrode structure Download PDFInfo
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- CN209312775U CN209312775U CN201821960447.3U CN201821960447U CN209312775U CN 209312775 U CN209312775 U CN 209312775U CN 201821960447 U CN201821960447 U CN 201821960447U CN 209312775 U CN209312775 U CN 209312775U
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Abstract
The utility model discloses a kind of field-effect tube with self-aligned gate electrode structure, including substrate, substrate is equipped with layer of channel material, it is gate electrode region in the middle part of layer of channel material, gate electrode region two sides are source region and drain region, are deposited with the first metal layer on source region and drain region, second metal layer is deposited on the first metal layer, it is deposited with third metal layer in second metal layer, gate dielectric layer is deposited on gate electrode region, grid metal is deposited on gate dielectric layer to form gate electrode.In the field-effect tube of the utility model, it is initially formed the source-drain electrode of three-layer metal stacking, corrode second layer metal to reselection, form the source-drain electrode of lateral concave, self aligned gate electrode is eventually formed, since the first layer metal being in contact with graphene will not be corroded, the length of grid and the join domain of source and drain interpolar will not be changed, therefore, the degree of source-drain electrode lateral concave will not change the size of connection resistance.
Description
Technical field
The utility model relates to microelectronics technology, in particular to a kind of field-effect with self-aligned gate electrode structure
Pipe.
Background technique
The progress of CMOS fabrication technology will lead to the channel length of device less than 10 nm, and into nm regime, traditional is pressed
Scale smaller will no longer be enough to continue the raising that device performance is obtained by manufacturing smaller transistor, therefore, several from device
What set about being feasible new solution in terms of shape, structure and material.
Graphene is as a kind of novel electronic functional material, due to its unique physical structure and excellent electrical property
Can, become the research hotspot of current microelectronic material, is with a wide range of applications in microelectronic field.New semiconductor material
(such as MoS2, MoSe2, WSe2, BP, CNT, silene) more and more attention has been paid to.
The connection resistance that the region un-gated (join domain) between gate electrode and source electrode and drain electrode generates is to influence field
One of the key factor of effect pipe performance is to solve the problems, such as this feasible solution using self-alignment structure.Have proposed from right
Quasi- nano structural material field-effect tube, preparation process is complicated, and (10 receive the very thin thickness of self aligned source/drain electrode metal
Rice or so), the non-self-aligned metal of one layer of thickening must be expanded with a photoetching and primary depositing technique again.
Summary of the invention
In order to solve the above-mentioned technical problem, the utility model, which provides a kind of make, simple, at low cost has sag
The field-effect tube of electrode structure.
The technical solution that the utility model solves the above problems is: a kind of field-effect with self-aligned gate electrode structure
Pipe, it is characterised in that: including substrate, substrate is equipped with layer of channel material, is gate electrode region, gate electrode in the middle part of layer of channel material
Region two sides are respectively source region and drain region, are deposited with the first metal layer on the source region and drain region,
It is deposited with second metal layer on the first metal layer, third metal layer is deposited in second metal layer, is sunk on the gate electrode region
Product has gate dielectric layer, and grid metal is deposited on gate dielectric layer to form gate electrode；The substrate include basal layer and be located at basal layer
The insulating layer of top；The gate dielectric layer be deposition aluminium autoxidation after the medium that is formed.
The above-mentioned field-effect tube with self-aligned gate electrode structure, the first metal layer, third metal layer are not etched
Agent is corroded, and be etched agent corrosion on the inside of second layer metal, to form the source-drain electrode for being used for self aligned lateral concave shape.
The above-mentioned field-effect tube with self-aligned gate electrode structure, the layer of channel material is graphene, carbon nanotube, black
One of phosphorus, molybdenum disulfide, two selenizing molybdenums, tungsten disulfide, two tungsten selenides, silene, silicon nanowires.
The above-mentioned field-effect tube with self-aligned gate electrode structure, the insulating layer are SiO2、Si3N4、BN、Al2O3、
HfO2, AlN, SiC, Si, Sapphire, glass, pet material PET, polyimides PI, poly- diformazan
The mixture of one or more of radical siloxane.
The above-mentioned field-effect tube with self-aligned gate electrode structure, between the first metal layer and second metal layer,
The additional metal layer for increasing adhesiveness is equipped between two metal layers and third metal layer.
The utility model has the beneficial effects that: being initially formed three-layer metal stacking in the field-effect tube of the utility model
Source-drain electrode corrodes second layer metal to reselection, forms the source-drain electrode of lateral concave, eventually forms self aligned grid electricity
Pole, since the first layer metal being in contact with graphene will not be corroded, the length of the join domain of grid and source and drain interpolar is not
It can be changed, therefore, the degree of source-drain electrode lateral concave will not change the size of connection resistance, and only use primary depositing work
Skill is formed sufficiently thick source-drain electrode metal and realizes autoregistration, simplifies manufacture craft, also saves cost of manufacture.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the field-effect tube of the utility model.
Fig. 2 is the schematic diagram of the utility model production method first step.
Fig. 3 is the schematic diagram of the utility model production method second step.
Fig. 4 is the schematic diagram of the utility model production method third step.
Fig. 5 is the schematic diagram of the 4th step of the utility model production method.
Fig. 6 is the schematic diagram of the 5th step of the utility model production method.
Fig. 7 is the schematic diagram of the 6th step of the utility model production method.
Fig. 8 is the schematic diagram of the 7th step of the utility model production method.
Fig. 9 is the schematic diagram of the 8th step of the utility model production method.
Figure 10 is the schematic diagram of the 9th step of the utility model production method.
Figure 11 is the schematic diagram of the tenth step of the utility model production method.
Specific embodiment
The utility model is further described with reference to the accompanying drawings and examples.
As shown in Figure 1, a kind of field-effect tube with self-aligned gate electrode structure, including substrate 1, substrate 1 include substrate
The layer 1-1 and insulating layer 1-2 above basal layer 1-1.The insulating layer 1-2 is SiO2、Si3N4、BN、Al2O3、HfO2、
AlN, SiC, Si, Sapphire, glass, pet material PET, polyimides PI, poly dimethyl silicon
The mixture of one or more of oxygen alkane etc..The basal layer 1-1 is semiconductor material, conductive material or is different from exhausted
The mixture of one or more of the material of edge layer.
As shown in Figure 1, substrate 1 be equipped with layer of channel material 2, layer of channel material 2 be graphene, carbon nanotube, black phosphorus,
Group III-V compound semiconductor (such as: molybdenum disulfide, two selenizing molybdenums, tungsten disulfide, two tungsten selenides), silene, silicon nanowires (Si
One of Nanowire)；In the middle part of layer of channel material 2 be gate electrode region, gate electrode region two sides be respectively source region and
Drain region is deposited with the first metal layer 4 on the source region and drain region, is deposited with second on the first metal layer 4
Metal layer 5 is deposited with third metal layer 6 in second metal layer 5, between the first metal layer 4 and second metal layer 5, the second metal
The additional metal layer for increasing adhesiveness is equipped between layer 5 and third metal layer 6；The first metal layer 4, third metal layer
6 are not etched agent corrosion, and be etched agent corrosion on the inside of second layer metal, to be formed for self aligned lateral concave shape
Source-drain electrode；Be deposited with gate dielectric layer 8 on the gate electrode region, gate dielectric layer 8 be deposition aluminium autoxidation after Jie for being formed
Matter is also possible to the other media of deposition；Grid metal 9 is deposited on gate dielectric layer 8 to form gate electrode.
A kind of production method of the field-effect tube with self-aligned gate electrode structure, comprising the following steps:
1) transfer or deposition or epi channels material layer 2 on substrate 1, and it is graphical, as shown in Figure 2；
2) lithographic definition source, drain regions 3 on layer of channel material 2, as shown in Figure 3；
3) the first metal layer 4 is formed in the source of definition, drain regions area deposition first layer source and drain metal, as shown in Figure 4；The
One layer of source and drain metal is that a kind of and nano structural material contacts good metal；
4) second layer source and drain metal is deposited on the first metal layer 4 and form second metal layer 5, as shown in Figure 5；It can also be
The first additional metal layer for increasing adhesiveness is deposited between one metal layer 4 and second metal layer 5；
5) third layer source and drain metal is deposited in second metal layer 5 and form third metal layer 6, as shown in Figure 6；It can also be
The second additional metal layer for increasing adhesiveness is equipped between two metal layers 5 and third metal layer 6；
6) removing removes the photoresist for defining source, drain regions, as shown in Figure 7；
7) with etching agent slightly source of corrosion, the inside of the second metal layer of drain regions 5, and the first metal layer 4, third are golden
Belong to layer 6 not to be corroded, so that the source-drain electrode for being used for self aligned lateral concave shape (shown in the position Q) is formed, such as Fig. 8 institute
Show；
8) the lithographic definition gate electrode region 7 on layer of channel material 2, as shown in Figure 9；
9) in the gate electrode area area deposition gate dielectric layer 8 of definition, in order to ensure gate metal will not occur with source-drain electrode
Short circuit, the thickness of gate dielectric layer 8 less times greater than the first metal layer 4 thickness, as shown in Figure 10；
10) grid metal 9 is deposited on gate medium, forms gate electrode, as shown in figure 11；
11) removing removes the photoresist for defining gate electrode region, forms self aligned nano field-effect pipe, such as Fig. 1
It is shown.
It should be noted that first layer source and drain metal not necessarily non-deposited can not, in other words can also be with second layer source and drain
Metal is same metal；In this case, as long as second layer source and drain metal is to contact good metal (contact electricity with channel material
Hinder small), but can be etched agent corrosion, but third layer metal be not etched agent corrosion can form barrier layer.But in this case, with
The first layer metal that graphene is in contact is corroded, and corrosion can change the length of join domain, therefore, source-drain electrode lateral concave
Degree can change connection resistance size.
The thickness of gate medium is without the thickness for being greater than first layer metal.In addition, the step 7) and step 8) are interchangeable.
Claims (4)
1. a kind of field-effect tube with self-aligned gate electrode structure, it is characterised in that: including substrate, substrate is equipped with channel material
The bed of material, layer of channel material middle part is gate electrode region, and gate electrode region two sides are respectively source region and drain region, the source
It is deposited with the first metal layer on polar region domain and drain region, second metal layer, second metal layer are deposited on the first metal layer
On be deposited with third metal layer, be deposited with gate dielectric layer on the gate electrode region, grid metal deposited on gate dielectric layer to be formed
Gate electrode；The substrate includes basal layer and the insulating layer above basal layer；The gate dielectric layer is the aluminium of deposition from oxygen
The medium formed after change；The first metal layer, third metal layer are not etched agent corrosion, and be etched agent on the inside of second layer metal
Corrosion, to form the source-drain electrode for being used for self aligned lateral concave shape.
2. the field-effect tube according to claim 1 with self-aligned gate electrode structure, it is characterised in that: the channel material
The bed of material is graphene, carbon nanotube, black phosphorus, molybdenum disulfide, two selenizing molybdenums, tungsten disulfide, two tungsten selenides, silene, silicon nanowires
One of.
3. the field-effect tube according to claim 1 with self-aligned gate electrode structure, it is characterised in that: the insulating layer
For SiO2、Si3N4、BN、Al2O3、HfO2, AlN, SiC, Si, Sapphire, glass, pet material
The mixture of one or more of PET, polyimides PI, dimethyl silicone polymer.
4. the field-effect tube according to claim 1 with self-aligned gate electrode structure, it is characterised in that: first gold medal
The additional metal for increasing adhesiveness is equipped between category layer and second metal layer, between second metal layer and third metal layer
Layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821960447.3U CN209312775U (en) | 2018-11-27 | 2018-11-27 | A kind of field-effect tube with self-aligned gate electrode structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821960447.3U CN209312775U (en) | 2018-11-27 | 2018-11-27 | A kind of field-effect tube with self-aligned gate electrode structure |
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| Publication Number | Publication Date |
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| CN209312775U true CN209312775U (en) | 2019-08-27 |
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| CN201821960447.3U Expired - Fee Related CN209312775U (en) | 2018-11-27 | 2018-11-27 | A kind of field-effect tube with self-aligned gate electrode structure |
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2018
- 2018-11-27 CN CN201821960447.3U patent/CN209312775U/en not_active Expired - Fee Related
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20190827 Termination date: 20201127 |
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| CF01 | Termination of patent right due to non-payment of annual fee |