CN209276630U - A kind of atomic layer deposition apparatus can and atomic layer deposition apparatus - Google Patents
A kind of atomic layer deposition apparatus can and atomic layer deposition apparatus Download PDFInfo
- Publication number
- CN209276630U CN209276630U CN201920063121.9U CN201920063121U CN209276630U CN 209276630 U CN209276630 U CN 209276630U CN 201920063121 U CN201920063121 U CN 201920063121U CN 209276630 U CN209276630 U CN 209276630U
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- Prior art keywords
- atomic layer
- layer deposition
- deposition apparatus
- snorkel
- utility
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Coating Apparatus (AREA)
Abstract
The utility model discloses a kind of atomic layer deposition apparatus cans, are related to technique for atomic layer deposition field；Including multiple snorkels, adjacent two of the snorkel is provided with cross bar, and the snorkel inboard arrays are provided with multiple ventholes, and the ventilation bottom of the tube is provided with air inlet, and the snorkel is hollow structure.The utility model further includes gas outflow supply, is combined into one other than the function of carrying wafer, and gas circuit design is simpler, practical reliable；Reduce the quantity of atomic layer deposition apparatus tracheae, while ensure that the effect of inflation, gas circuit is individually separated, and has prevented the mutual pollution of incompatible gas completely.
Description
Technical field
The utility model relates to technique for atomic layer deposition field, specifically a kind of atomic layer deposition apparatus can and original
Sublayer depositing device.
Background technique
Atomic layer deposition be it is a kind of can the method for being plated in substrate surface by substance with monatomic form membrane in layer.
Atomic layer deposition and common chemical deposition have similarity.But in atomic layer deposition process, the chemistry of new one layer of atomic film
Reaction is that directly preceding layer is associated therewith, and this mode makes each reaction only deposit one layer of atom.
Existing chip metal box is used only to vertical loading wafer, and the gas of atomic layer deposition apparatus is by other
Complicated channel flows to the upper surface of wafer, and after running through technique every time, can needs do overturning fortune function, to increase wafer
Sliding and the caused particle risk that rubs.Therefore a kind of solution that can be avoided such risk is needed.
Utility model content
The purpose of this utility model is to provide a kind of atomic layer deposition apparatus can and atomic layer deposition apparatus, with
Solve the problems mentioned above in the background art.
To achieve the above object, the utility model provides a kind of following technical solution:
A kind of atomic layer deposition apparatus can, including more snorkels, adjacent two of the snorkel are provided with cross
Bar, the snorkel inboard arrays are provided with multiple ventholes, and the ventilation bottom of the tube is provided with air inlet, and the snorkel is
Hollow structure.
As a further solution of the present invention: not being connected to mutually between the more snorkels.
The snorkel upper vent hole gradually becomes smaller in aperture from top to bottom as a further solution of the present invention,.
It is connected with each other at the top of the more snorkels by support rod as a further solution of the present invention,.
The utility model provides another technical solution:
A kind of atomic layer deposition apparatus comprising above-mentioned atomic layer deposition apparatus can.
As a further solution of the present invention, the atomic layer deposition apparatus bottom be provided with on snorkel
The protrusion conduit of air inlet cooperation.
Compared with prior art, the utility model has the beneficial effects that the utility model in addition to carrying wafer function other than,
Further include gas outflow supply, be combined into one, gas circuit design is simpler, practical reliable；Reduce atomic layer deposition apparatus tracheae
Quantity, while ensure that the effect of inflation, gas circuit is individually separated, and has prevented the mutual pollution of incompatible gas completely, is protected
Demonstrate,prove processing quality；The outflow of gas circuit flows directly into the upper surface of wafer, avoids the waste of other complexity flow directions of gas, and energy
Improve process speed；It can be adjusted, be protected according to the position of wafer in metal grain towards the jet size of wafer upper surface
Card instant gas flow is evenly distributed to every wafer, can preferably control the process uniformity of batch-wafer in this way；Ventilation
Hole can allow uniform ion to be effectively covered with the surface of every wafer in technological reaction towards ion source；In automation process
When production, the utility model avoids the particle that wafer is generated due to overturning sliding friction without overturning.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of atomic layer deposition apparatus can.
In figure: snorkel -1, cross bar -2, venthole -3, support rod -4, air inlet -5.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
Embodiment 1
Referring to Fig. 1, in the utility model embodiment 1, a kind of atomic layer deposition apparatus can, including more ventilations
Pipe 1, the snorkel 1 are hollow structure, and the number of locations of the snorkel 1 is selected according to wafer size, the more ventilations
It is connected with each other at the top of pipe 1 by support rod 4, the snorkel 1 adjacent two is provided with cross bar 2, and setting cross bar 2 is easily carried crystalline substance
Circle, 1 inboard arrays of snorkel are provided with multiple ventholes 3, and the venthole 3 is for blowing the wafer on cross bar 2
It is connected to inside gas, the venthole 3 and snorkel 1.
It is not connected to mutually between the more snorkels 1, has prevented the mutual pollution of incompatible gas completely, more to client
Good process results, 1 bottom of snorkel are provided with air inlet 5, pass through 3 pairs of crystalline substances of venthole on snorkel 1 convenient for gas source
Circle is blown.Aperture gradually becomes smaller venthole 3 on the snorkel 1 from top to bottom, is convenient for so that every layer crystal justifies air-blowing quantity
It is equal.
Embodiment 2
A kind of atomic layer deposition apparatus bottom comprising atomic layer deposition apparatus can described in embodiment 1, bottom
Portion is provided with the protrusion conduit cooperated with the air inlet 5 on snorkel 1, the prominent conduit external gas source.
The working principle of the utility model is:
The wafer for needing atomic layer deposition is placed to cross bar 2, then by can and atomic deposition device bottom
Prominent tubes fit, external gas source enters to the snorkel 1 in can by prominent conduit, then passes through snorkel upper vent hole
3 uniformly blow to the wafer on cross bar 2.
The can of the utility model further includes gas outflow supply, is combined into one, gas other than the function of carrying wafer
Road design is more simple and clear, and practical reliable；Reduce the quantity of atomic layer deposition apparatus tracheae, while ensure that the effect of inflation
Fruit, gas circuit are individually separated, and have prevented the mutual pollution of incompatible gas completely, give the better process results of client；Gas circuit
Outflow flows directly into the upper surface of wafer, avoids the waste of other complexity flow directions of gas, and can improve process speed；Direction
The jet size of wafer upper surface can be adjusted according to the position of wafer in metal grain, guarantee that instant gas flow is average
It is assigned to every wafer, can preferably control the process uniformity of batch-wafer in this way；Venthole 3 can allow towards ion source
Uniform ion is effectively covered with the surface of every wafer in technological reaction；In automation process production, the utility model
Without overturning, the particle that wafer is generated due to overturning sliding friction is avoided.
In the description of the present invention, it should be understood that term " center ", " longitudinal direction ", " transverse direction ", "top", "bottom",
The orientation or positional relationship of the instructions such as "inner", "outside", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal" is
It is based on the orientation or positional relationship shown in the drawings, is merely for convenience of describing the present invention and simplifying the description, rather than indicate
Or imply that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore cannot understand
For limitations of the present invention.In addition, term " first ", " second " etc. are used for description purposes only, and should not be understood as indicating
Or it implies relative importance or implicitly indicates the quantity of indicated technical characteristic.As a result, in the description of the present invention,
Unless otherwise indicated, " more " are meant that two or two or more.The feature for defining " first ", " second " etc. can be expressed
Or implicitly include one or more of the features.
It is obvious to a person skilled in the art that the present invention is not limited to the details of the above exemplary embodiments, and
And without departing substantially from the spirit or essential attributes of the utility model, it can realize that this is practical new in other specific forms
Type.Therefore, in all respects, the present embodiments are to be considered as illustrative and not restrictive, this is practical new
The range of type is indicated by the appended claims rather than the foregoing description, it is intended that containing for the equivalent requirements of the claims will be fallen in
All changes in justice and range are embraced therein.It should not treat any reference in the claims as limiting
Related claim.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiments being understood that.
Claims (6)
1. a kind of atomic layer deposition apparatus can, including more snorkels (1), adjacent two of the snorkel (1) is arranged
There are cross bar (2), which is characterized in that snorkel (1) inboard arrays are provided with multiple ventholes (3), snorkel (1) bottom
Portion is provided with air inlet (5), and the snorkel (1) is hollow structure.
2. atomic layer deposition apparatus can according to claim 1, which is characterized in that the more snorkels (1)
Between be not connected to mutually.
3. atomic layer deposition apparatus can according to claim 1, which is characterized in that lead on the snorkel (1)
Stomata (3) gradually becomes smaller in aperture from top to bottom.
4. atomic layer deposition apparatus can according to claim 1, which is characterized in that the more snorkels (1)
Top will be connected with each other by support rod (4).
5. a kind of atomic layer deposition apparatus, which is characterized in that the atomic layer deposition apparatus includes claim 1-4 any described
Atomic layer deposition apparatus can.
6. atomic layer deposition apparatus according to claim 5, which is characterized in that the atomic layer deposition apparatus bottom setting
There is the protrusion conduit with air inlet (5) cooperation on snorkel (1).
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SG10201805699P | 2018-07-02 | ||
| SG10201805699P | 2018-07-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209276630U true CN209276630U (en) | 2019-08-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910036498.XA Active CN109518165B (en) | 2018-07-02 | 2019-01-15 | Atomic layer deposition batch production equipment |
| CN201920063129.5U Active CN209276631U (en) | 2018-07-02 | 2019-01-15 | A kind of atomic layer deposition apparatus |
| CN201920063121.9U Active CN209276630U (en) | 2018-07-02 | 2019-01-15 | A kind of atomic layer deposition apparatus can and atomic layer deposition apparatus |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910036498.XA Active CN109518165B (en) | 2018-07-02 | 2019-01-15 | Atomic layer deposition batch production equipment |
| CN201920063129.5U Active CN209276631U (en) | 2018-07-02 | 2019-01-15 | A kind of atomic layer deposition apparatus |
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| CN (3) | CN109518165B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112481604B (en) * | 2020-12-03 | 2023-09-08 | 无锡邑文电子科技有限公司 | ALD processing equipment and processing method |
| CN118073167B (en) * | 2024-04-19 | 2024-07-05 | 南京原磊纳米材料有限公司 | Multi-disc type anti-coiling automatic cavity taking and placing mechanism |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6916374B2 (en) * | 2002-10-08 | 2005-07-12 | Micron Technology, Inc. | Atomic layer deposition methods and atomic layer deposition tools |
| WO2006055984A2 (en) * | 2004-11-22 | 2006-05-26 | Applied Materials, Inc. | Substrate processing apparatus using a batch processing chamber |
| US7833351B2 (en) * | 2006-06-26 | 2010-11-16 | Applied Materials, Inc. | Batch processing platform for ALD and CVD |
| JP2009203533A (en) * | 2008-02-28 | 2009-09-10 | Nec Electronics Corp | Atomic layer epitaxy apparatus |
| CN102312221A (en) * | 2011-09-06 | 2012-01-11 | 中国科学院长春光学精密机械与物理研究所 | Atomic layer deposition apparatus employing uniform air intake system |
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2019
- 2019-01-15 CN CN201910036498.XA patent/CN109518165B/en active Active
- 2019-01-15 CN CN201920063129.5U patent/CN209276631U/en active Active
- 2019-01-15 CN CN201920063121.9U patent/CN209276630U/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN109518165B (en) | 2021-06-04 |
| CN209276631U (en) | 2019-08-20 |
| CN109518165A (en) | 2019-03-26 |
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