CN209233797U - A kind of X-band 12W power amplifier circuit - Google Patents
A kind of X-band 12W power amplifier circuit Download PDFInfo
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- CN209233797U CN209233797U CN201822195579.8U CN201822195579U CN209233797U CN 209233797 U CN209233797 U CN 209233797U CN 201822195579 U CN201822195579 U CN 201822195579U CN 209233797 U CN209233797 U CN 209233797U
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- resistance
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- triode
- operational amplifier
- inductance
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Abstract
The utility model discloses a kind of X-band 12W power amplifier circuits, including power amplifier module and amplification factor adjustment module, wherein the triode of double parallel organizations connects operational amplifier output terminal, and stable power amplification processing may be implemented；Tunable capacitor is managed by MOSFET and is connect with the input terminal of operational amplifier, can change circuit amplification factor by control amplifier negative feedback voltage.The utility model whole design can neatly carry out power amplification processing, and the operation is stable, low cost.
Description
Technical field
The utility model relates to power amplification field, it particularly relates to a kind of X-band 12W power amplifier circuit, it can
Small signal power enhanced processing is neatly carried out to stablize.
Background technique
With the continuous development of field of telecommunications, wireless communication technique is also being constantly progressive, and in almost all of radio frequency and
In microwave system, it all be unable to do without the amplification of signal.Power amplifier is maximum as power consumption in system, generates non-linear strongest mould
Block, its performance will directly affect the superiority and inferiority of system performance.Just because of protrusion of the power amplifier in radio frequency microwave system
Position, so that being increasingly becoming a highly important direction in frequency microwave field to its research.
Compared to other amplifiers, the characteristics of power amplifier is not pursue output HIGH voltage or the big electricity of output merely
Stream, but pursue in the case where supply voltage determines, export power as big as possible.Current power amplification common on the market
Device can improve power output in the case where sacrificing power consumption, and it is excessive that this method be easy to cause circuit work calories to generate, and causes
The case where electronic component work unstability.Meanwhile the amplification factor of power amplifier usually compares fixation, is difficult to need for circuit
Change is made, so it is inadequate to use flexibility ratio.Flexibility ratio height can be completed at the same time and the preferable power of amplifier effect is put
Big device generally requires higher cost, this compares for small microwave or radio frequency system and do not meet actual cost control
Requirement.
Utility model content
For the problems in the relevant technologies, the utility model proposes a kind of X-band 12W power amplifier circuits, to overcome
Above-mentioned technical problem present in existing the relevant technologies.
The technical solution of the utility model is achieved in that
A kind of X-band 12W power amplifier circuit, which is characterized in that adjusted including power amplifier module and amplification factor
Module；
Power amplifier module, including operational amplifier AR1, resistance R1, resistance R2, resistance R3, resistance R4, inductance L1, electricity
Feel L2, triode Q1, triode Q2, capacitor C1 and capacitor C2, one end of the capacitor C2 is connect with current signal I-in, described
The other end of capacitor C2 is connect with the second pin of one end of the inductance L2, the operational amplifier AR1 respectively, the inductance
The other end of L2 is grounded, and the 7th pin of the operational amplifier AR1 is connect with one end of the capacitor C1, the capacitor C1's
The other end is connect with the collector of one end of the resistance R1, the triode Q1 respectively, the other end ground connection of the resistance R1,
The base stage of the triode Q1 respectively with the 6th pin of the operational amplifier AR1, one end of the inductance L1, three pole
The base stage of pipe Q2 connects, the emitter of the triode Q2 respectively with the emitter of the triode Q1, the inductance L1 it is another
The connection of one end of one end connection of one end, the resistance R2, the collector of the triode Q2 and the resistance R3, the electricity
The other end of resistance R3 is connect with the 4th pin of the operational amplifier AR1, the third pin of the operational amplifier AR1 and institute
The one end for stating resistance R4 connects, the 5th pin of the first pin of the operational amplifier AR1 and the operational amplifier AR1,
The 8th pin of the operational amplifier AR1 is open circuit；
Amplification factor adjustment module, including MOSFET pipe Q3, resistance R5, capacitor C3, variable capacitance CV1, diode D1 and
Loudspeaker LS1, the pole S of the MOSFET pipe Q3 are connect with the other end of the resistance R4, the pole the D difference of the MOSFET pipe Q3
Connect with one end of one end of the variable capacitance CV1, the resistance R5, the pole G of the MOSFET pipe Q3 respectively with the electricity
Hinder one end connection of the other end, the capacitor C3 of R2, the other end of the variable capacitance CV1 and the one of the loudspeaker LS1
End connection, the other end of the resistance R5 are connect with the diode D1, the other end and the loudspeaker of the diode D1
The other end of LS1, the capacitor C3 the other end be grounded.
Further, the triode Q1 is NPN type triode；The triode Q2 is PNP type triode.
Further, the MOSFET pipe Q3 is N-channel transistor npn npn.
Further, the resistance value size of the resistance R1, the resistance R3, the resistance R4 and the resistance R5 are 1k
Ω；The resistance value size of the resistance R2 is 2.2k Ω.
Further, the capacitor C1 and the capacitor C2, the capacitor C3 capacitance size be 100pF.
Further, the inductance value size of the inductance L1 and inductance L2 is 10mH.
The utility model has the following beneficial effects: the utility model is connected by the double parallel triodes of design with operational amplifier
It uses, strengthens the stability of circuit power amplification；The use of tunable capacitor can control the voltage of amplifier negative-feedback circuit, from
And change circuit amplification factor；Whole design can neatly carry out power amplification processing, and the operation is stable, low cost.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description is only the utility model
Some embodiments for those of ordinary skill in the art without creative efforts, can also be according to this
A little attached drawings obtain other attached drawings.
Fig. 1 is a kind of X-band 12W power amplifier circuit according to the utility model embodiment.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art's every other embodiment obtained, all belongs to
In the range of the utility model protection.
Embodiment according to the present utility model provides a kind of X-band 12W power amplifier circuit.
As shown in Figure 1, according to the X-band 12W power amplifier circuit of the utility model embodiment, which is characterized in that packet
Include power amplifier module and amplification factor adjustment module；
Power amplifier module, including operational amplifier AR1, resistance R1, resistance R2, resistance R3, resistance R4, inductance L1, electricity
Feel L2, triode Q1, triode Q2, capacitor C1 and capacitor C2, one end of the capacitor C2 is connect with current signal I-in, described
The other end of capacitor C2 is connect with the second pin of one end of the inductance L2, the operational amplifier AR1 respectively, the inductance
The other end of L2 is grounded, and the 7th pin of the operational amplifier AR1 is connect with one end of the capacitor C1, the capacitor C1's
The other end is connect with the collector of one end of the resistance R1, the triode Q1 respectively, the other end ground connection of the resistance R1,
The base stage of the triode Q1 respectively with the 6th pin of the operational amplifier AR1, one end of the inductance L1, three pole
The base stage of pipe Q2 connects, the emitter of the triode Q2 respectively with the emitter of the triode Q1, the inductance L1 it is another
The connection of one end of one end connection of one end, the resistance R2, the collector of the triode Q2 and the resistance R3, the electricity
The other end of resistance R3 is connect with the 4th pin of the operational amplifier AR1, the third pin of the operational amplifier AR1 and institute
The one end for stating resistance R4 connects, the 5th pin of the first pin of the operational amplifier AR1 and the operational amplifier AR1,
The 8th pin of the operational amplifier AR1 is open circuit；
Amplification factor adjustment module, including MOSFET pipe Q3, resistance R5, capacitor C3, variable capacitance CV1, diode D1 and
Loudspeaker LS1, the pole S of the MOSFET pipe Q3 are connect with the other end of the resistance R4, the pole the D difference of the MOSFET pipe Q3
Connect with one end of one end of the variable capacitance CV1, the resistance R5, the pole G of the MOSFET pipe Q3 respectively with the electricity
Hinder one end connection of the other end, the capacitor C3 of R2, the other end of the variable capacitance CV1 and the one of the loudspeaker LS1
End connection, the other end of the resistance R5 are connect with the diode D1, the other end and the loudspeaker of the diode D1
The other end of LS1, the capacitor C3 the other end be grounded.
In one embodiment, the triode Q1 is NPN type triode；The triode Q2 is PNP type triode.
In one embodiment, the MOSFET pipe Q3 is N-channel transistor npn npn.
In one embodiment, the resistance R1, the resistance R3, the resistance value of the resistance R4 and the resistance R5 are big
Small is 1k Ω；The resistance value size of the resistance R2 is 2.2k Ω.
In one embodiment, the capacitance size of the capacitor C1 and the capacitor C2, the capacitor C3 are
100pF。
In one embodiment, the inductance value size of the inductance L1 and inductance L2 is 10mH.
Working principle: operational amplifier AR1, resistance R1, resistance R2, resistance R3, resistance R4, inductance L1, inductance L2, three poles
Pipe Q1, triode Q2, capacitor C1 and capacitor C2 form power amplifier module, and the effect of the operational amplifier AR1 is to input
Current signal carries out power amplification, is converted to big signal；The resistance R1, the resistance R2, the resistance R3 and the resistance
The effect of R4 is the resistance ratio for balancing each port operational amplifier AR1, adjusts electric current output；The triode Q1,
The effect of the triode Q2 and the inductance L1 are to construct transistor amplifier circuit, carry out exempting to make an uproar to the electric current of amplifier output
Sonication, can be to avoid electronic component because of error caused by circuit working state heat production.
MOSFET pipe Q3, resistance R5, capacitor C3, variable capacitance CV1, diode D1 and loudspeaker LS1 form amplification factor
Adjustment module, the effect of the MOSFET pipe Q3 are to connect the positive input terminal for adjusting circuit and the operational amplifier AR1
It connects, under the action of the variable capacitance CV1, control signal voltage transformation, to change current amplification factor；When can power transformation
When hold the capacitance of CV1 reduces with circuit variation, the amplification factor of circuit is reduced, and power amplification effect reduces, otherwise power is put
Big multiple becomes larger.
In conclusion by means of the above-mentioned technical proposal of the utility model, by designing a kind of X-band 12W power amplification
Device circuit carries out stablizing transmission process using double-triode valve parallel construction to amplification electric current, while external tunable capacitor is to power
Amplification factor can carry out appropriate adjustment so that power amplification effect stability and flexibly.
The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, all at this
Within the spirit and principle of utility model, any modification, equivalent replacement, improvement and so on should be included in the utility model
Protection scope within.
Claims (6)
1. a kind of X-band 12W power amplifier circuit, which is characterized in that adjust mould including power amplifier module and amplification factor
Block；
Power amplifier module, including operational amplifier AR1, resistance R1, resistance R2, resistance R3, resistance R4, inductance L1, inductance L2,
Triode Q1, triode Q2, capacitor C1 and capacitor C2, one end of the capacitor C2 are connect with current signal I-in, the capacitor
The other end of C2 is connect with the second pin of one end of the inductance L2, the operational amplifier AR1 respectively, the inductance L2's
Other end ground connection, the 7th pin of the operational amplifier AR1 are connect with one end of the capacitor C1, and the capacitor C1's is another
End is connect with the collector of one end of the resistance R1, the triode Q1 respectively, the other end ground connection of the resistance R1, described
The base stage of triode Q1 respectively with the 6th pin of the operational amplifier AR1, one end of the inductance L1, the triode Q2
Base stage connection, the emitter of the triode Q2 respectively with the emitter of the triode Q1, the inductance L1 the other end,
One end of the resistance R2 connects, the connection of one end of the collector of the triode Q2 and the resistance R3, the resistance R3
The other end connect with the 4th pin of the operational amplifier AR1, the third pin of the operational amplifier AR1 and the electricity
Hinder one end connection of R4, it is the 5th pin of the first pin of the operational amplifier AR1 and the operational amplifier AR1, described
The 8th pin of operational amplifier AR1 is open circuit；
Amplification factor adjustment module, including MOSFET pipe Q3, resistance R5, capacitor C3, variable capacitance CV1, diode D1 and loudspeaking
Device LS1, the pole S of the MOSFET pipe Q3 are connect with the other end of the resistance R4, the pole D of the MOSFET pipe Q3 respectively with institute
State one end connection of one end of variable capacitance CV1, the resistance R5, the pole G of the MOSFET pipe Q3 respectively with the resistance R2
The other end, the capacitor C3 one end connection, one end of the other end of the variable capacitance CV1 and the loudspeaker LS1 connect
It connects, the other end of the resistance R5 is connect with the diode D1, and the other end of the diode D1 is with the loudspeaker LS1's
The other end, the capacitor C3 the other end be grounded.
2. a kind of X-band 12W power amplifier circuit according to claim 1, which is characterized in that the triode Q1 is
NPN type triode；The triode Q2 is PNP type triode.
3. a kind of X-band 12W power amplifier circuit according to claim 1, which is characterized in that the MOSFET pipe Q3
It is N-channel transistor npn npn.
4. a kind of X-band 12W power amplifier circuit according to claim 1, which is characterized in that the resistance R1, institute
The resistance value size for stating resistance R3, the resistance R4 and the resistance R5 is 1k Ω；The resistance value size of the resistance R2 is
2.2kΩ。
5. a kind of X-band 12W power amplifier circuit according to claim 1, which is characterized in that the capacitor C1 and institute
State capacitor C2, the capacitance size of the capacitor C3 is 100pF.
6. a kind of X-band 12W power amplifier circuit according to claim 1, which is characterized in that the inductance L1 and institute
The inductance value size for stating inductance L2 is 10mH.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822195579.8U CN209233797U (en) | 2018-12-26 | 2018-12-26 | A kind of X-band 12W power amplifier circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822195579.8U CN209233797U (en) | 2018-12-26 | 2018-12-26 | A kind of X-band 12W power amplifier circuit |
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| Publication Number | Publication Date |
|---|---|
| CN209233797U true CN209233797U (en) | 2019-08-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201822195579.8U Active CN209233797U (en) | 2018-12-26 | 2018-12-26 | A kind of X-band 12W power amplifier circuit |
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| Country | Link |
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| CN (1) | CN209233797U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113259048A (en) * | 2021-05-31 | 2021-08-13 | 成都雷通科技有限公司 | X-waveband high-power suppressing interference device |
-
2018
- 2018-12-26 CN CN201822195579.8U patent/CN209233797U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113259048A (en) * | 2021-05-31 | 2021-08-13 | 成都雷通科技有限公司 | X-waveband high-power suppressing interference device |
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