CN208904051U - Flip-chip, area source and the display device using the area source - Google Patents
Flip-chip, area source and the display device using the area source Download PDFInfo
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- CN208904051U CN208904051U CN201821579160.6U CN201821579160U CN208904051U CN 208904051 U CN208904051 U CN 208904051U CN 201821579160 U CN201821579160 U CN 201821579160U CN 208904051 U CN208904051 U CN 208904051U
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Abstract
The utility model discloses a kind of flip-chip, area source and using the display device of the area source, the flip-chip includes Metal gate layer, has the metal wire being arranged parallel to each other；Wafer substrates, set on the lower section of the Metal gate layer；N doped layer and cathode conductor are set to the lower section of the wafer substrates；Quantum well layer, set on the lower section of the N doped layer；P doped layer, set on the lower section of the quantum well layer；Optical rotatory substance layer, set on the lower section of the P doped layer；Reflecting layer, set on the lower section of the optical rotatory substance layer；Positive wire, set on the lower section in the reflecting layer.The flip-chip, area source and the display device using the area source of the utility model, effectively improve area source in the light extraction efficiency in wide-angle direction, expand the visual angular region of area source.
Description
Technical field
The utility model relates to the fields such as display device, and in particular to a kind of flip-chip, area source and use the face light
The display device in source.
Background technique
With the continuous development of science and technology, contact of the people with electronic equipment is more and more frequent, to display device (or display
Screen) requirement also constantly get higher.MiniLED display device is as future market OLED display (organic electroluminescent two
Pole pipe display device) strong competing product, MiniLED display device have it is highlighted, flexible, high dynamic can be made
Many advantages, such as contrast display technology, narrow frame display technology, special-shaped display technology, it has also become market survey hot spot.
However, at present miniLED display device in terms of light extraction efficiency, even light mixing, cost, mould group with it is normal
It advises product backlight and OLED display compares also some gaps.For light efficiency, miniLED display device uses flexible electrical
Road plate (Flexible Printed Circuit abbreviation FPC) or printed circuit board (Printed Circuit Board, abbreviation
PCB) cause a part of light of area source in optics due to the refractive index difference of material as the direct-type backlight framework of substrate
Outgoing is constrained between diaphragm and substrate, light is repeatedly reflected and reflected between optical diaphragm, and luminous energy is caused
The decline of loss and light efficiency.Even if using some functional films in microLED display device or miniLED display device
Piece framework can only also guarantee microLED display device or miniLED display device in the emitting brightness of positive apparent direction, and big
In view directions, it is still unable to satisfy the requirement of high light-emitting efficiency.For the problem, there is not preferable settling mode temporarily at present.
Utility model content
Technical problem to be solved by the utility model is to provide a kind of flip-chip, area source and use the area source
Display device make chip emergent ray that there is linearly polarized light characteristic by the way that metal wire grid layer and optical rotatory substance layer is added, and
In conjunction with bandpass filtering film structure, guarantees that area source has higher light extraction efficiency in bigger angular field of view, expand area source
Visual angular region.
In order to solve the above-mentioned technical problem, the utility model provides a kind of flip-chip, including Metal gate layer, if having
The dry metal wire being arranged parallel to each other；Wafer substrates, set on the lower section of the Metal gate layer；N doped layer and cathode conductor, are all provided with
In the lower section of the wafer substrates；Quantum well layer, set on the lower section of the N doped layer；P doped layer is set to the quantum well layer
Lower section；Optical rotatory substance layer, set on the lower section of the P doped layer；Reflecting layer, set on the lower section of the optical rotatory substance layer；Anode
Conducting wire, set on the lower section in the reflecting layer.
In an embodiment of the utility model, the flip-chip is blue light flip-chip, feux rouges flip-chip and green light
One of flip-chip.
In an embodiment of the utility model, relative to the wafer substrates, the metal wire is in the blue light upside-down mounting core
Orientation in piece is perpendicular to orientation of the metal wire in the feux rouges flip-chip or the metal wire in institute
State orientation of the orientation perpendicular to the metal wire in the green light flip-chip in blue light flip-chip.
In an embodiment of the utility model, the metal wire is nano wire；The metal wire selects silver nanowires, Tong Na
One of rice noodles, nickel nano wire, cobalt nanowire, aluminium nano wire and alumina nanowires.
In an embodiment of the utility model, the spacing between the adjacent metal wire is 50nm-200nm.
In an embodiment of the utility model, the Metal gate layer with a thickness of 50nm-100nm.
The utility model additionally provides a kind of area source, including substrate；Chip layer, wherein there is the flip-chip,
There is gap between the flip-chip；Bandpass filters, sputter is on the substrate and in the gap；Optical diaphragm
Layer is set in the chip layer.
In an embodiment of the utility model, several blue light flip-chips, feux rouges upside-down mounting core are distributed in the chip layer
Piece and green light flip-chip.
In an embodiment of the utility model, the metal wire orientation in the blue light flip-chip is perpendicular to described red
Metal wire orientation in light flip-chip or green light flip-chip.
The utility model additionally provides a kind of display device using the area source, includes the area source, Yi Jiyi
Display panel above the area source.
The beneficial effects of the utility model are: the flip-chip of the utility model, area source and and using the area source
Display device guarantees that flip-chip being capable of efficient emergent ray by the way that Metal gate layer and optical rotatory substance layer are added in flip-chip
Polarised light, as P-polarized light or S polarized light effectively improve area source in wide-angle direction by optimizing bandpass filtering membrane structure
Light extraction efficiency, expand the visual angular region of area source.
Detailed description of the invention
The utility model is further explained with reference to the accompanying drawings and examples.
Fig. 1 is the blue light flip-chip layer structure figure of an embodiment of the present invention.
Fig. 2 is the feux rouges flip-chip of an embodiment of the present invention or the layer structure figure of green light flip-chip.
Fig. 3 is the area source layer structure figure of an embodiment of the present invention.
Fig. 4 is the bandpass filter schematic diagram of bandpass filters in the area source of an embodiment of the present invention.
Fig. 5 is the light penetration frequency spectrum of an embodiment of the present invention.
Fig. 6 is the schematic diagram of the display device of an embodiment of the present invention.
Appended drawing reference:
10 area sources；
1 substrate；2 chip layers；
3 fluorescent films；4 bandpass filters；
5 optical diaphragm layers；
51 diffusion sheets；52 brightness enhancement films；
20 flip-chips；210 blue light flip-chips；
220 feux rouges flip-chips；230 green light flip-chips；
201 Metal gate layers；202 wafer substrates；
203N doped layer；204 quantum well layers；
205P doped layer；206 optical rotatory substance layers；
207 reflecting layer；208 cathode conductors；
209 positive wires；2011 metal wires；
100 display devices；30 display panels；
601 first curves；602 second curves；
603 third curves.
Specific embodiment
The explanation of following embodiment is to can be used to the specific reality of implementation to illustrate the utility model with reference to additional schema
Apply example.The direction term that the utility model is previously mentioned, such as "upper", "lower", "front", "rear", "left", "right", "top", "bottom"
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the utility model, rather than
To limit the utility model.
As shown in Figure 1 and Figure 2, in one embodiment, the flip-chip 20 of the utility model, according to the light of area source
Line primary colours design requirement, in the present embodiment, the flip-chip 20 is blue light flip-chip 210, feux rouges flip-chip 220 and green
One of light flip-chip 230.Wherein Fig. 1 is the layer structure of the blue light flip-chip 210 of an embodiment of the present invention
Figure, and Fig. 2 is the feux rouges flip-chip 220 of an embodiment of the present invention or the layer structure figure of green light flip-chip 230.
As shown in Figure 1 and Figure 2, each flip-chip 20 successively includes Metal gate layer 201, wafer substrates from top to bottom
202, N doped layer 203, quantum well layer 204, P doped layer 205, optical rotatory substance layer 206 and reflecting layer 207.The upside-down mounting core
Piece 20 further includes having cathode conductor 208 and positive wire 209, wherein the cathode conductor 208 is set to the wafer substrates 202
Lower section, the positive wire 209 be set to the reflecting layer 207 lower section.
The Metal gate layer 201 has several metal wires 2011；The metal wire 2011 is arranged parallel to each other and is distributed in
Metal gate layer 201 is formed in the wafer substrates 202.According to chip design requirement, the general Metal gate layer 201 with a thickness of
50nm-100nm.Spacing between the adjacent metal wire 2011 is 50nm-200nm.The metal wire 2011 is nano wire；This
In embodiment, the nano wire selects silver nanowires, copper nano-wire, nickel nano wire, cobalt nanowire, aluminium nano wire and aluminium oxide to receive
One of rice noodles.
Relative to the wafer substrates 202, in the flip-chip 20 of different base colors, the metal wire 2011 is served as a contrast in chip
Arragement direction on bottom 202 is also different.In the present embodiment, referring also to Fig. 1 and Fig. 2, the metal wire 2011 is in the blue light
Orientation of the orientation perpendicular to the metal wire 2011 in the feux rouges flip-chip 220 in flip-chip 210,
Or orientation of the metal wire 2011 in the blue light flip-chip 210 perpendicular to the metal wire 2011 described green
Orientation in light flip-chip 230.
The wafer substrates 202 are set to the lower section of the Metal gate layer 201.In the present embodiment, the wafer substrates 202 are selected
Use Sapphire Substrate.
The N doped layer 203 is set to the lower section of the wafer substrates 202.The quantum well layer 204 is adulterated set on the N
The lower section of layer 203；The P doped layer 205 is set to the lower section of the quantum well layer 204；
The optical rotatory substance layer 206 is set to the lower section of the P doped layer 205.After light passes through optical rotatory substance layer 206,
Vibration plane will turn over certain angle as axis using the direction of propagation of light.Under normal circumstances, it is all linearly polarized light can be made to pass through after will
The substance that its vibration plane rotates by a certain angle, referred to as optically active substance.Rotation in the present embodiment, in the optical rotatory substance layer 206
Stimulative substance can be liquid crystal material, mica (quartz) or small organic molecule optically activ material.
The reflecting layer 207 is set to the lower section of the optical rotatory substance layer 206；The positive wire 209 is set to the reflection
The lower section of layer 207, the cathode conductor 208 are set to the lower section of the wafer substrates 202.
By taking the blue light flip-chip 210 as an example, the optical path for the emergent light that the quantum well layer 204 issues is said
Bright: the emergent light of the quantum well layer 204 is the non-polarized light of approximate natural light, non-polarized light after the Metal gate layer 201,
The Metal gate layer 201 can seem a polarization spectro unit, and non-polarized light is divided into the first polarised light and the second polarization of chopped-off head
Light；If the first polarised light is P-polarized light, the second polarised light is S polarized light, at this point, only the first polarised light can be through described
Metal gate layer 201, the second polarised light cannot be reflected back through the Metal gate layer 201；When second be reflected back toward is inclined
Light shake when by the optical rotatory substance layer 206, polarization direction changes, and is again introduced into the Metal gate layer 201, this
When, the second polarised light into the Metal gate layer 201 is divided into and is divided into the first polarised light and the second polarization of next stage
Light, likewise, first polarised light of only this grade can penetrate the Metal gate layer 201, and second polarised light of this grade is anti-
It is emitted back towards and, so repeatedly reciprocal, the second polarised light is completely converted into the first polarised light from institute step by step by the optical rotatory substance layer 206
It states Metal gate layer 201 to appear, appears rate to effectively improve from the emergent light of the quantum well layer 204 sending.
By taking the feux rouges flip-chip 220 as an example, the optical path for the emergent light that the quantum well layer 204 issues is said
It is bright: since orientation of the metal wire 2011 in the blue light flip-chip 210 exists perpendicular to the metal wire 2011
Orientation in the feux rouges flip-chip 220, therefore, the emergent light of the quantum well layer 204 are the non-of approximate natural light
Polarised light, for non-polarized light after the Metal gate layer 201, the Metal gate layer 201 can seem a polarization spectro unit, unpolarized
Light is divided into the second polarised light and the first polarised light of chopped-off head；At this point, only the second polarised light can penetrate the Metal gate layer
201, the first polarised light cannot be reflected back through the Metal gate layer 201；When the first polarised light being reflected back toward is passing through
When crossing the optical rotatory substance layer 206, polarization direction changes, and is again introduced into the Metal gate layer 201, at this point, into
First polarised light of the Metal gate layer 201 is divided into and is divided into the second polarised light and the first polarised light of next stage, equally
, only second polarised light of this grade can penetrate the Metal gate layer 201, and first polarised light of this grade is reflected back,
So repeatedly reciprocal, the first polarised light is completely converted into the second polarised light from the metal step by step by the optical rotatory substance layer 206
Grid layer 201 appears, and appears rate to effectively improve from the emergent light of the quantum well layer 204 sending.
Since orientation of the metal wire 2011 in the blue light flip-chip 210 is also perpendicular to the metal
Orientation of the line 2011 in the green light flip-chip 230；Therefore, in the green light flip-chip 230, emergent light
Optical path can refer to the example of the feux rouges flip-chip 220, this is no longer repeated one by one.
As shown in figure 3, completely realizing it in area source in order to using the flip-chip 20 in above-described embodiment
It is capable of the light extraction efficiency of raising in bigger angular field of view, expands the visual angular region of area source, the invention also discloses
A kind of area source 10 comprising substrate 1, chip layer 2, bandpass filters 4 and optical diaphragm layer 5.
The substrate 1 can be FPC substrate or PCB substrate.In the present embodiment, the substrate 1 is FPC flexible base board.
There are several flip-chips 20 in the chip layer 2, there is gap between the flip-chip 20.The core
Several blue light flip-chips 210, feux rouges flip-chip 220 and green light flip-chip 230 are distributed in lamella 2.The blue light
It is sequentially arranged at intervals respectively between flip-chip 210, feux rouges flip-chip 220 and green light flip-chip 230.As its arrangement is suitable
Sequence is followed successively by blue light flip-chip 210, feux rouges flip-chip 220, green light flip-chip 230, so recycles, and forms array square
Battle array.In the chip layer 2,2011 orientation of metal wire in the blue light flip-chip 210 is fallen perpendicular to the feux rouges
2011 orientation of metal wire in cartridge chip 220 or green light flip-chip 230.
The bandpass filters 4 are prepared using low temperature coating process.More particularly, the bandpass filters 4
It is by forming bandpass filter material at low temperature sputter and in a fluorescence film surface.The bandpass filters 4 are located at described
In the gap between flip-chip 20.The bandpass filter material filming is on area source, and on the flip-chip 20
Fang Wei is covered by the bandpass filters 4.
The optical diaphragm layer 5 is arranged on the flip-chip 20, and in the present embodiment, the optical diaphragm includes expanding
Discrete piece 51, brightness enhancement film 52.Diffusion sheet 51 is set in the chip layer 2；The brightness enhancement film 52 is set on the diffusion sheet 51.
Fig. 4 is positive the bandpass filter schematic diagrames of bandpass filters 4 in apparent direction, issues from the flip-chip 20
For light after the diffusion sheet 51 by upper layer, part reflected light enters the bandpass filters 4, the bandpass filters 4
Feux rouges and green light to long wavelength realize total reflection, to improve feux rouges and green light utilization rate.
As shown in figure 5, the first curve 601 in Fig. 5 is the bandpass filtering film in positive apparent direction, specific transmitance frequency
Spectrum.If the chip of area source uses conventional structure chip, then on wide-angle direction, general bandpass filtering film fails to reach
Ideal blue light high transmission, red-green glow high reflection effect, if but being improved to the polarization state that goes out of chip, the band of appropriate mix
Logical 4 architecture of filter coating, can realize preferable light extraction efficiency in polarizers of big angle scope.The second curve 602 in Fig. 5 be
P polarization light transmission rate frequency spectrum when 70 ° of visual angles, S-polarization light transmission rate frequency spectrum when third curve 603 is 70 ° of visual angles.The present embodiment
In, if the P of blue light in the blue flip-chip can be realized using blue flip-chip as shown in Figure 1 in the area source
Polarised light outgoing can be real if the area source uses the red flip-chip or the green flip-chip as shown in Figure 2
In the existing red flip-chip in the S polarized light outgoing of feux rouges or the green flip-chip green light S polarized light outgoing, from
And guarantee the high reflectance of the high transmittance of blue light and red-green glow in polarizers of big angle scope.
As shown in fig. 6, the utility model display device 100 includes the area source 10 and one on the area source
The display panel 30 of side, wherein the area source 10 provides light for the display panel.In one embodiment, described aobvious
Show that panel 30 is a liquid crystal display panel.Focus on the area source 10 and the upside-down mounting core due to the utility model
Piece 20, therefore just not for other components of display device (such as pedestal, frame or other diaphragms for improving optical quality etc.)
It repeats one by one here.
The above is only the preferred embodiments of the present utility model only, is not intended to limit the utility model, all practical at this
Made any modifications, equivalent replacements, and improvements etc., should be included in the guarantor of the utility model within novel spirit and principle
Within the scope of shield.
Claims (10)
1. a kind of flip-chip, which is characterized in that including
Metal gate layer has several metal wires being arranged parallel to each other；
Wafer substrates, set on the lower section of the Metal gate layer；
N doped layer and cathode conductor are set to the lower section of the wafer substrates；
Quantum well layer, set on the lower section of the N doped layer；
P doped layer, set on the lower section of the quantum well layer；
Optical rotatory substance layer, set on the lower section of the P doped layer；
Reflecting layer, set on the lower section of the optical rotatory substance layer；
Positive wire, set on the lower section in the reflecting layer.
2. flip-chip according to claim 1, which is characterized in that the flip-chip is blue light flip-chip, feux rouges
One of flip-chip and green light flip-chip.
3. flip-chip according to claim 2, which is characterized in that relative to the wafer substrates, the metal wire exists
Orientation of the orientation perpendicular to the metal wire in the feux rouges flip-chip in the blue light flip-chip, or
The metal wire the orientation in the blue light flip-chip perpendicular to the metal wire in the green light flip-chip
Orientation.
4. flip-chip according to claim 1, which is characterized in that the metal wire is nano wire；The nanometer line selection
With one of silver nanowires, copper nano-wire, nickel nano wire, cobalt nanowire, aluminium nano wire and alumina nanowires.
5. flip-chip according to claim 1, which is characterized in that the spacing between the adjacent metal wire is 50nm-
200nm。
6. flip-chip according to claim 1, which is characterized in that the Metal gate layer with a thickness of 50nm-100nm.
7. a kind of area source using the flip-chip as described in any one of claim 1-6, which is characterized in that including
Substrate；
Chip layer has gap with the flip-chip between the flip-chip；
Bandpass filters are set in the gap；
Optical diaphragm layer is set in the chip layer.
8. area source according to claim 7, which is characterized in that several blue light upside-down mounting cores are distributed in the chip layer
Piece, feux rouges flip-chip and green light flip-chip.
9. area source according to claim 8, which is characterized in that the metal wire orientation in the blue light flip-chip
Perpendicular to the metal wire orientation in the feux rouges flip-chip or green light flip-chip.
10. a kind of display device using area source as claimed in claim 7, which is characterized in that it include the area source,
An and display panel above the area source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821579160.6U CN208904051U (en) | 2018-09-27 | 2018-09-27 | Flip-chip, area source and the display device using the area source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821579160.6U CN208904051U (en) | 2018-09-27 | 2018-09-27 | Flip-chip, area source and the display device using the area source |
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| Publication Number | Publication Date |
|---|---|
| CN208904051U true CN208904051U (en) | 2019-05-24 |
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ID=66573928
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| Application Number | Title | Priority Date | Filing Date |
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| CN201821579160.6U Active CN208904051U (en) | 2018-09-27 | 2018-09-27 | Flip-chip, area source and the display device using the area source |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109244200A (en) * | 2018-09-27 | 2019-01-18 | 武汉华星光电技术有限公司 | Flip-chip, area source and the display device using the area source |
-
2018
- 2018-09-27 CN CN201821579160.6U patent/CN208904051U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109244200A (en) * | 2018-09-27 | 2019-01-18 | 武汉华星光电技术有限公司 | Flip-chip, area source and the display device using the area source |
| CN109244200B (en) * | 2018-09-27 | 2024-03-29 | 武汉华星光电技术有限公司 | Flip chip, area light source and display device using the same |
| US12021176B2 (en) | 2018-09-27 | 2024-06-25 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Flip chip, surface light source, and display device using surface light source thereof |
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