CN208890640U - A kind of booster plate with high safety performance - Google Patents

A kind of booster plate with high safety performance Download PDF

Info

Publication number
CN208890640U
CN208890640U CN201821737307.XU CN201821737307U CN208890640U CN 208890640 U CN208890640 U CN 208890640U CN 201821737307 U CN201821737307 U CN 201821737307U CN 208890640 U CN208890640 U CN 208890640U
Authority
CN
China
Prior art keywords
resistance
connect
capacitor
diode
pwm chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201821737307.XU
Other languages
Chinese (zh)
Inventor
王�琦
傅治顺
***
赵俊
戴无病
陈德才
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chengdu Wanster Measurement And Control Technology Co Ltd
Original Assignee
Chengdu Wanster Measurement And Control Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chengdu Wanster Measurement And Control Technology Co Ltd filed Critical Chengdu Wanster Measurement And Control Technology Co Ltd
Priority to CN201821737307.XU priority Critical patent/CN208890640U/en
Application granted granted Critical
Publication of CN208890640U publication Critical patent/CN208890640U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Dc-Dc Converters (AREA)

Abstract

The utility model discloses a kind of booster plates with high safety performance, power input passes through PMOS tube and inductance connection, PMOS tube drain electrode is connected by inductance and first diode anode, NMOS tube drain electrode, and NMOS tube grid and PWM chip control connect, and the first diode cathode is exported as power supply;First capacitor is connect with the first diode cathode, first diode cathode is also connect with breakdown diode cathode, breakdown diode anode is connect by the second diode with NPN transistor base, NPN triode collector is connect with PMOS tube grid, and reset switch is connect by third diode with NPN transistor base.The utility model has the beneficial effects that detecting by output protection circuit to output voltage, input power and each electronic device are protected;Output voltage is detected whether, having power input in the case where output voltage is normally late-class circuit power supply;In the case where no output voltage, that is, short circuit when, pass through close PMOS tube, protect input and output.

Description

A kind of booster plate with high safety performance
Technical field
The utility model belongs to boosting electronic technology field, and in particular to a kind of booster plate with high safety performance.
Background technique
Booster plate is the circuit integration plate with booster circuit, and booster circuit can make output voltage higher than input voltage. By the way that input voltage to be boosted to certain voltage value, to provide pumping signal for other equipment.Existing booster plate protection Function is not perfect, and input and output do not obtain real protection, be easy to cause integrated circuit in entire booster plate due to some failure Damage increases production cost.
Utility model content
To overcome technological deficiency of the existing technology, the utility model discloses a kind of boostings with high safety performance Plate detects output voltage by output protection circuit, protects input power and each electronic device.
Technical solution adopted by the utility model to solve its technical problems is a kind of booster plate with high safety performance, The booster plate includes output protection circuit, and output protection circuit includes PMOS tube, NMOS tube, NPN triode, inductance, first Resistance, second resistance, 3rd resistor, first diode, the second diode, third diode, first capacitor, breakdown diode, PWM chip and reset switch;
Power input is connect with PMOS tube source electrode, first resistor of connecting between PMOS tube source electrode and grid, PMOS tube drain electrode It is connect with inductance one end, the inductance other end is connected with first diode anode, NMOS tube drain electrode respectively, NMOS tube grid and PWM Chip controls connection, the first diode cathode are exported as power supply;First capacitor one end is connect with the first diode cathode, another One end ground connection, first diode cathode are also connect with breakdown diode cathode, breakdown diode anode and the second diode cathode Connection, the second diode cathode are connect by second resistance with NPN transistor base, NPN triode collector and gate pmos Pole connection, 3rd resistor of connecting between NPN transistor base and its emitter, reset switch are connect with third diode cathode, Third diode cathode is connect by second resistance with NPN transistor base.
Preferably, the model UC3842 of the PWM chip.
Preferably, output protection circuit further includes the 4th resistance, the 5th resistance, the 6th resistance, the 7th resistance, the 8th electricity Resistance, the 9th resistance, the tenth resistance, eleventh resistor, twelfth resistor, third capacitor, the 4th capacitor, the 5th capacitor and the second electricity Hold, the 5th resistance one end and power supply output connect, and the other end passes through the 4th resistance eutral grounding, 1 foot and the 7th resistance of PWM chip 2 feet of one end connection, the 7th resistance other end and PWM chip connect, and third capacitor is connected in parallel on the 7th resistance both ends, the 4th resistance It is connect with the common end of the 5th resistance with the 7th resistance, 8 feet of PWM chip are connect with the 6th resistance one end, and the 6th resistance is another End is connect with the 4th capacitor one end, and the 4th capacitor other end is connect with the second capacitor, the tenth resistance common end, and the 4th capacitor is another End is also connect with 3 feet of PWM chip, and 4 feet of PWM chip are connect with the 4th capacitor, the 6th resistance common end, 4 feet of PWM chip It is also connect respectively with the 8th resistance one end, the 5th capacitor one end, the 8th resistance other end and the second capacitor, the tenth resistance common end Connection, the 5th capacitor other end ground connection, 5 foot of PWM chip connect with second capacitor one end, the second capacitor other end and passes through the tenth Resistance is connect with NMOS tube source electrode, and 6 feet of PWM chip connects by twelfth resistor with NMOS tube grid, NMOS tube drain and The connection of first diode anode, NMOS tube source electrode are grounded by eleventh resistor, and 7 feet of PWM chip are connect with power input.
Preferably, the reset switch is single-chip processor i/o interface.
Preferably, the reset switch is touch-switch.
The utility model has the beneficial effects that structure is simple and component is few, by output protection circuit to output voltage into Row detection, protects input power and each electronic device;Breakdown diode has detected whether output voltage, it is ensured that has output voltage In the case where power input be normally late-class circuit power supply;In the case where no output voltage, that is, short circuit when, pass through closing PMOS tube protects input and output.
Detailed description of the invention
Fig. 1 is a kind of specific embodiment schematic illustration of the utility model.
Fig. 2 is another specific embodiment schematic illustration of the utility model.
Appended drawing reference: VIN- power input, the output of VOUT- power supply, Q1-PMOS pipe, Q2-NPN triode, Q3-NMOS pipe, L- inductance, D1- first diode, the second diode of D2-, D3- third diode, ZD- breakdown diode, R1- first resistor, R2- second resistance, R3- 3rd resistor, the 4th resistance of R4-, the 5th resistance of R5-, the 6th resistance of R6-, the 7th resistance of R7-, R8- Eight resistance, the 9th resistance of R9-, the tenth resistance of R10-, R11- eleventh resistor, R12- twelfth resistor, C1- first capacitor, C2- Second capacitor, C3- third capacitor, the 4th capacitor of C4-, the 5th capacitor of C5-.
Specific embodiment
More detailed description is done to the embodiments of the present invention below in conjunction with attached drawing and appended drawing reference, makes to be familiar with ability The technology people in domain can implement accordingly after studying this specification carefully.It should be appreciated that specific embodiment described herein is only to solve The utility model is released, is not used to limit the utility model.
In the description of the present invention, it should be noted that the orientation of the instructions such as term " on ", "horizontal", "inner" or Positional relationship is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of describing the present invention and simplifying the description, Rather than the device or element of indication or suggestion meaning must have a particular orientation, be constructed and operated in a specific orientation, because This should not be understood as limiting the present invention.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " is pacified Dress ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected;It can To be mechanical connection, it is also possible to be electrically connected;It can be directly connected, can also can be indirectly connected through an intermediary Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition Concrete meaning in utility model.
Embodiment 1: a kind of booster plate with high safety performance referring to figure 1, the booster plate include output Circuit is protected, output protection circuit includes PMOS tube Q1, NMOS tube Q3, NPN triode Q2, inductance L, first resistor R1, second Resistance R2,3rd resistor R3, first diode D1, the second diode D2, third diode D3, first capacitor C1, two poles of breakdown Pipe ZD, PWM chip and reset switch;
Power input VIN is connect with PMOS tube Q1 source electrode, first resistor of connecting between PMOS tube Q1 source electrode and grid R1, PMOS tube Q1 drain electrode is connect with the one end inductance L, and the inductance L other end connects with first diode D1 anode, NMOS tube Q3 drain electrode respectively It connects, NMOS tube Q3 grid and PWM chip control connect, and the first diode D1 cathode exports VOUT as power supply;First capacitor C1 One end is connect with the first diode D1 cathode, the other end ground connection, first diode D1 cathode also with breakdown diode ZD cathode Connection, breakdown diode ZD anode connect with the second diode D2 anode, the second diode D2 cathode pass through second resistance R2 and The connection of NPN triode Q2 base stage, NPN triode Q2 collector are connect with PMOS tube Q1 grid, and NPN triode Q2 base stage is sent out with it Connect 3rd resistor R3 between emitter-base bandgap grading, and reset switch connect with third diode D3 anode, and third diode D3 cathode passes through the Two resistance R2 are connect with NPN triode Q2 base stage.
In the present embodiment, output voltage is detected by output protection circuit, protects input power and each electronics Device.
Specifically, reset switch is placed in high level when powering on, and when power supply output VOUT has voltage, breakdown diode ZD Conducting, the second diode D2 conducting, NPN triode Q2 base stage obtain high level, NPN triode Q2 conducting, PMOS tube Q1 grid It is pulled low, PMOS tube Q1 conducting, and when PWM exports high level, NMOS tube Q3 grid receives high level and causes its conducting, the one or two Pole pipe D1 cut-off, power input VIN is that inductance L stores electric energy by PMOS tube Q1, when PWM exports low level, NMOS tube Q3 Grid receives low level and causes its cut-off, and the electric discharge polarity of inductance L is identical as power input VIN, is equal to inductance L and power input VIN connects, and the electric energy stored on inductance L is loaded directly on power input VIN, is equal to and increases input voltage, therefore realizes and rise Pressure effect, is placed in low level for reset switch at this time, and first capacitor C1 and first diode D1 form filter circuit.
When a short circuit occurs, since power supply output VOUT is zero, breakdown diode ZD cut-off, due to the second diode D2's One-way conduction, the second diode D2 cut-off, power input VIN provide high level by first resistor R1 for PMOS tube Q1, make PMOS tube Q1 cut-off, power input VIN and power supply output VOUT are disconnected, and protect input and output.Since reset switch is low level, When then only having short trouble to release, reset switch is being placed in high level, when output to be entered works normally, then will automatically reset Switch is placed in low level.
Wherein, reset switch is single-chip processor i/o interface or touch-switch, and single-chip processor i/o directly exports low and high level realization Reset switch opens or closes, touch-switch, that is, key switch, to meet the condition of operating force to switch operation side when use It is connected to pressure switching function closure, switchs and disconnect when cancelling pressure, internal structure is changed by metal clips stress To realize on-off.
Embodiment 2: preferably, output protection circuit further includes the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, Seven resistance R7, the 8th resistance R8, the 9th resistance R9, the tenth resistance R10, eleventh resistor R11, twelfth resistor R12, third electricity Hold C3, the 4th capacitor C4, the 5th capacitor C5 and the second capacitor C2, the 5th one end resistance R5 is connect with power supply output VOUT, another One end is grounded by the 4th resistance R4, and 1 foot of PWM chip is connect with the 7th one end resistance R7, the 7th resistance R7 other end and PWM 2 feet of chip connect, and third capacitor C3 is connected in parallel on the 7th both ends resistance R7, the common end of the 4th resistance R4 and the 5th resistance R5 with 7th resistance R7 connection, 8 feet of PWM chip are connect with the 6th one end resistance R6, the 6th resistance R6 other end and the 4th capacitor C4 One end connection, the 4th capacitor C4 other end are connect with the second capacitor C2, the tenth common end resistance R10, the 4th capacitor C4 other end Also it is connect with 3 feet of PWM chip, 4 feet of PWM chip are connect with the 4th capacitor C4, the 6th common end resistance R6, and the 4 of PWM chip Foot is also connect with the 8th one end resistance R8, the 5th one end capacitor C5 respectively, the 8th resistance R8 other end and the second capacitor C2, the tenth The connection of the common end resistance R10, the 5th capacitor C5 other end ground connection, 5 foot of PWM chip are connect with second one end capacitor C2, the second electricity Hold the C2 other end to connect with by the tenth resistance R10 with NMOS tube Q3 source electrode, 6 feet of PWM chip pass through twelfth resistor R12 and The connection of NMOS tube Q3 grid, NMOS tube Q3 drain electrode are connect with first diode D1 anode, and NMOS tube Q3 source electrode passes through the 11st electricity R11 ground connection is hindered, 7 feet of PWM chip are connect with power input VIN.
In the present embodiment, there is the booster plate of high safety performance, PWM in the present embodiment referring to attached another kind shown in Fig. 2 The model UC3842 of chip, power input VIN realize boosting inverter, are chip power supply also by 7 feet of PWM chip, 7th resistance R7 and third capacitor C3 compensate the slope of inductive current, make the peak point current of inductance L and the average electricity of inductance L Rheologyization is consistent, and the duty ratio of PWM chip is made to be greater than 50%, avoids causing the concussion of high frequency subharmonic;
6th resistance R6 and the 5th capacitor C5 is the oscillation frequency of PWM chip, changes the working condition of NMOS tube Q3, when When 6 feet of PWM chip export high level, NMOS tube Q3 conducting, inductance L stores electric energy, and when NMOS tube Q3 cut-off, inductance L is produced Induced voltage is given birth to, the electric energy stored on inductance L is loaded directly on power input VIN, is equal to and is increased input voltage, therefore realizes Boosting;
4th resistance R4 and the 5th resistance R5 acquires output voltage, and the output voltage is fed back to 2 feet of PWM chip, Error voltage is generated with the comparator inside PWM chip;
Eleventh resistor R11 is current sense resistor, and the electric current during NMOS tube Q3 conducting is on eleventh resistor R11 Voltage is generated to send to 3 feet of PWM chip, the pulsewidth of control modulation pulse after being compared with error voltage, to keep stable Output voltage.
The above content is the further descriptions made in conjunction with specific preferred embodiment to the utility model, cannot recognize Determine specific embodiment of the present utility model to be only limited to these instructions.For the common skill of the utility model technical field For art personnel, the other embodiments obtained in the case where not departing from the technical solution of the utility model be should be included in practical In novel protection scope.

Claims (5)

1. a kind of booster plate with high safety performance, it is characterised in that: the booster plate includes output protection circuit, and output is protected Protection circuit include PMOS tube, NMOS tube, NPN triode, inductance, first resistor, second resistance, 3rd resistor, first diode, Second diode, third diode, first capacitor, breakdown diode, PWM chip and reset switch;
Power input is connect with PMOS tube source electrode, first resistor of connecting between PMOS tube source electrode and grid, PMOS tube drain electrode and electricity Feel one end connection, the inductance other end is connected with first diode anode, NMOS tube drain electrode respectively, NMOS tube grid and PWM chip Control connection, the first diode cathode are exported as power supply;First capacitor one end is connect with the first diode cathode, the other end Ground connection, first diode cathode are also connect with breakdown diode cathode, and breakdown diode anode is connect with the second diode cathode, Second diode cathode is connect by second resistance with NPN transistor base, and NPN triode collector and PMOS tube grid connect It connects, 3rd resistor of connecting between NPN transistor base and its emitter, reset switch is connect with third diode cathode, third Diode cathode is connect by second resistance with NPN transistor base.
2. as described in claim 1 with the booster plate of high safety performance, it is characterised in that: the model of the PWM chip UC3842。
3. as claimed in claim 2 with the booster plate of high safety performance, it is characterised in that: output protection circuit further includes the Four resistance, the 5th resistance, the 6th resistance, the 7th resistance, the 8th resistance, the 9th resistance, the tenth resistance, eleventh resistor, the tenth Two resistance, third capacitor, the 4th capacitor, the 5th capacitor and the second capacitor, the 5th resistance one end and power supply output connect, another End is connect by the 4th resistance eutral grounding, 1 foot of PWM chip with the 7th resistance one end, and the 2 of the 7th resistance other end and PWM chip Foot connection, third capacitor are connected in parallel on the 7th resistance both ends, and the common end of the 4th resistance and the 5th resistance is connect with the 7th resistance, 8 feet of PWM chip are connect with the 6th resistance one end, and the 6th resistance other end is connect with the 4th capacitor one end, and the 4th capacitor is another End is connect with the second capacitor, the tenth resistance common end, and the 4th capacitor other end is also connect with 3 feet of PWM chip, and the 4 of PWM chip Foot is connect with the 4th capacitor, the 6th resistance common end, 4 feet of PWM chip also respectively with the 8th resistance one end, the 5th capacitor one end Connection, the 8th resistance other end are connect with the second capacitor, the tenth resistance common end, the 5th capacitor other end ground connection, PWM chip 5 Foot is connect with second capacitor one end, and the second capacitor other end is connect with by the tenth resistance with NMOS tube source electrode, and the 6 of PWM chip Foot is connect by twelfth resistor with NMOS tube grid, and NMOS tube drain electrode is connect with first diode anode, and NMOS tube source electrode is logical Eleventh resistor ground connection is crossed, 7 feet of PWM chip are connect with power input.
4. as described in claim 1 with the booster plate of high safety performance, it is characterised in that: the reset switch is single-chip microcontroller I/O interface.
5. as described in claim 1 with the booster plate of high safety performance, it is characterised in that: the reset switch is to touch out It closes.
CN201821737307.XU 2018-10-25 2018-10-25 A kind of booster plate with high safety performance Active CN208890640U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201821737307.XU CN208890640U (en) 2018-10-25 2018-10-25 A kind of booster plate with high safety performance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201821737307.XU CN208890640U (en) 2018-10-25 2018-10-25 A kind of booster plate with high safety performance

Publications (1)

Publication Number Publication Date
CN208890640U true CN208890640U (en) 2019-05-21

Family

ID=66517220

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201821737307.XU Active CN208890640U (en) 2018-10-25 2018-10-25 A kind of booster plate with high safety performance

Country Status (1)

Country Link
CN (1) CN208890640U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111273593A (en) * 2020-03-23 2020-06-12 珠海嘉润医用影像科技有限公司 Endoscope intelligent control circuit
CN111682761A (en) * 2020-05-22 2020-09-18 深圳市优必选科技股份有限公司 Power supply control circuit and method and wearable electronic equipment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111273593A (en) * 2020-03-23 2020-06-12 珠海嘉润医用影像科技有限公司 Endoscope intelligent control circuit
CN111273593B (en) * 2020-03-23 2021-09-21 珠海嘉润医用影像科技有限公司 Endoscope intelligent control circuit
CN111682761A (en) * 2020-05-22 2020-09-18 深圳市优必选科技股份有限公司 Power supply control circuit and method and wearable electronic equipment

Similar Documents

Publication Publication Date Title
CN101882879B (en) Circuit converting constant current source to constant voltage source and light using same
CN202373957U (en) Over-voltage and under-voltage protection circuit
CN104242249A (en) Protective circuit of switching power supply
CN203536942U (en) A novel ring choke converter output overvoltage protection circuit
CN101123399A (en) Switching power supply device
CN208890640U (en) A kind of booster plate with high safety performance
CN103595256A (en) DC/DC power system for electric vehicle
CN202488350U (en) Fly-back switching power supply circuit suitable for photovoltaic system
CN109245082A (en) Two-way switch circuit that is a kind of anti-reverse and inhibiting power-on surge current
CN208589916U (en) It is a kind of with overvoltage protection and it is anti-sparking function dc power interface circuit
CN201846229U (en) Soft start circuit
CN204424894U (en) A kind of DC power supply input protection circuit
CN203445602U (en) Flyback overvoltage protection circuit
CN203368003U (en) Dual protection device for Boost circuit
CN203398768U (en) Low-cost AC input overvoltage protection circuit and switching power supply
CN203707751U (en) RCC overvoltage protection circuit
CN204205548U (en) Circuit overcurrent protection
CN103852676A (en) Passive contact detection device and method
CN106253719A (en) A kind of load power source control circuit and device
CN204721240U (en) A kind of switching power circuit
CN209200928U (en) A kind of electric current plate with delay startup
CN103441672A (en) Self-excitation BUCK circuit based on auxiliary winding sampling circuit
CN210037954U (en) Power supply voltage overvoltage and undervoltage protection indicating circuit
CN206004528U (en) A kind of high power booster circuit
CN208226868U (en) A kind of circuit of reversed excitation

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant