CN208836020U - Driver, bridge arm, multi-phase inverter circuit and printed circuit board layout based on gallium nitride power device - Google Patents
Driver, bridge arm, multi-phase inverter circuit and printed circuit board layout based on gallium nitride power device Download PDFInfo
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Abstract
The utility model relates to a kind of driver based on gallium nitride power device, bridge arm, multi-phase inverter circuit and printed circuit board layouts, resistance R2, resistance R1, impedance radio-frequency suppressor, zener diode and peak absorbing module between gallium nitride power transistor and driving chip；Resistance R2 is parallel to the output end of driving chip, and resistance R1 connects with impedance radio-frequency suppressor and connect with gallium nitride power transistor de grid, and the end output end GND of driving chip is connected to after zener diode is in parallel with resistance R1 and impedance radio-frequency suppressor；Drain electrode and source electrode of the peak absorbing wired in parallel in gallium nitride power transistor output end.The utility model can be while guaranteeing stabilized driving gallium nitride power device, reduce the component usage quantity of driving circuit, the cost of driving circuit is reduced, while being able to suppress gate driving oscillation under gallium nitride power transistor high-frequency work, reducing the problems such as due to voltage spikes of gallium nitride power transistor switching process.
Description
Technical field
The invention belongs to power conversion field, especially two level of DC-AC, and single-phase, three-phase inversion power conversion technology is led
Domain is related to a kind of driver based on gallium nitride power device, bridge arm, multi-phase inverter circuit and printed circuit board layout.
Background technique
The switching frequency that power device is improved in power conversion application field can be effectively reduced energy conversion output harmonic wave,
Better energy output is obtained, the control effect of higher precision is reached, but the Reverse recovery energy of traditional Si power device is high,
The energy loss in power conversion process has been significantly greatly increased, has reduced the efficiency of power conversion；Meanwhile the application ring of power conversion
There is also the bad working environments such as high temperature in border, and in such a case, the application of traditional Si power device has received certain limitation, high temperature
The output of decline volume, causes power conversion efficiency to reduce.
With the development of modern power device, high efficiency, high frequency, high temperature, high power density be power device development must
Right direction, and the power electronic power device of traditional silicon materials is gradually unable to satisfy power electronics, power and partly leads under this demand
The requirement of body, broad stopband power semiconductor become the ideal material for substituting traditional silicon device.
Break the pattern of existing semiconductor using silicon carbide and gallium nitride as the power semiconductor of representative, high pressure resistant,
Outstanding advantages of high electron mobility and good heat conductivity and strong antijamming capability, is gradually applied to wide bandgap semiconductor
In more extensive field, such as: in the fields such as aerospace, military affairs, radio frequency, wireless charging and Medical Devices.
Currently, the voltage endurance capability of high pressure gallium nitride power device can reach 650V, maximum drain current ability is in 50A
Left and right has larger application potential in middle low power field.
Switching frequency in power conversion although can be improved using gallium nitride power device, but quickly switching process meaning
Higher transient change amount dv/dt, di/dt, this indicates that gallium nitride power device to printed circuit board and loop of power circuit
Stray inductance, parasitic parameter are more sensitive, and oscillation is easy to happen during driving, and oscillation is likely to result in driving out of control, device
Overcurrent is led directly between one bridge arm of hourglass source electrode both ends over-voltage breakdown or device, device can not work normally or even make under this operating condition
At permanent damage.
Publication No. CN105896992A, the applying date are on May 27th, 2016, and date of publication is on August 24th, 2016
State's patent proposes that a kind of hyperfrequency driving method of gallium nitride power device, the driving method of the patent requirements are explained from system
Stated (gate pole) driving method of grid under hyperfrequency and control method, but be directed to gallium nitride power device under high-frequency work by
The problems such as switch interference brought by the parasitic parameter of printed circuit board and system line, grid oscillation, does not suggest that effective
Solution.
Publication No. CN102611288A, the applying date are on March 19th, 2012, and date of publication is on July 25th, 2012
State's patent, proposes a kind of three level driving methods of gallium nitride power transistor, which exists for gallium nitride power transistor
The big problem of conduction voltage drop under reverse-conducting mechanism reduces reverse-conducting loss, can improve converter to a certain extent
Working efficiency, but there is a problem of for driving method and Publication No. CN105896992A similar, details are not described herein.
Summary of the invention
Technical problems to be solved
In order to avoid the shortcomings of the prior art, the present invention propose a kind of driver based on gallium nitride power device,
Bridge arm, multi-phase inverter circuit and printed circuit board layout, carry out DC-AC power conversion with gallium nitride power device, propose
A kind of circuit and corresponding printed circuit board device layout wiring method reducing the oscillation of gallium nitride power device gate pole.
Technical solution
A kind of driver based on gallium nitride power device, including gallium nitride power transistor and driving chip, feature
It is to further include high set on first resistor R2, second resistance R1, the impedance between gallium nitride power transistor and driving chip
Frequency suppressor, zener diode and peak absorbing module；First resistor R2 is parallel to the output end of driving chip, second resistance R1
It connects with impedance radio-frequency suppressor and is connect with gallium nitride power transistor de grid, zener diode and second resistance R1 and change
The end output end GND of driving chip is connected to after impedance radio-frequency suppressor is in parallel；Peak absorbing wired in parallel is in gallium nitride power
The drain electrode of transistor output and source electrode；The impedance radio-frequency suppressor uses magnetic bead；The peak absorbing module is using electricity
The series circuit of R3 and capacitor C1 are hindered, the resistance R3 and capacitor C1 are composed in series a RC absorbing circuit.
The resistance R3=((2~4) × 535) × Iα, capacitor C1=(2~4) × 108×Iα, wherein Iα=0.367*Id,
IdFor power device operating current.
A kind of bridge arm constituted using the driver based on gallium nitride power device, it is characterised in that: drive two
When dynamic device constitutes a bridge arm, one or more Absorption Capacitances are connected at bridge arm both ends.
It is a kind of that multi-phase inverter circuit is constituted using the bridge arm, it is characterised in that: when n bridge arm is constituted inverter circuit,
One or more Absorption Capacitances are connected at each bridge arm both ends；N >=2.
It is a kind of realize described in the driver based on gallium nitride power device printed circuit board layout, it is characterised in that:
Using driving chip as starting point, in the corresponding control output pin right end of driving chip, second resistance R1 connects with magnetic bead FB1 to be put
It sets in same row, a row of first resistor R2 and zener diode composition is placed on this row top, on the right side of zener diode
End is the row that capacitor C1 and resistance R3 are composed in series, and the right part of magnetic bead FB1 is the grid of gallium nitride device Q1, in printing electricity
The side of road plate is equipped with input and output terminal P1, P2 and P3.
Layout when constituting the bridge arm, the placement of upper and lower bridge arm drive part device is identical, above and below gallium nitride device
Close to placing, the RC absorbing circuit device of two devices is individually positioned in the two sides up and down of bridge arm, puts on the right side of bridge arm bridge arm
Set Absorption Capacitance C3.
When the layout for constituting the single-phase inversion circuit, when two gallium nitride device bridge arms and the positive and negative connection of bus, respectively
A bridge arm passes through time line and the positive and negative connection of main bus-bar respectively.
When the layout for constituting the multi-phase inverter circuit, when each gallium nitride device bridge arm and the positive and negative connection of bus, respectively
A bridge arm passes through time line and the positive and negative connection of main bus-bar respectively.
Beneficial effect
A kind of driver based on gallium nitride power device, bridge arm, multi-phase inverter circuit and printing proposed by the present invention
Circuit-board laying-out is carrying out DC-AC power conversion with gallium nitride power device, is proposing a kind of reduction gallium nitride power device door
The circuit and corresponding printed circuit board device layout wiring method of pole oscillation, application range are the nitridation such as single-phase, three-phase inversion
The driving application of gallium power device HF switch, for gallium nitride power device in middle low power driving electricity caused by devices switch
The problems such as pointing peak and output oscillation, effectively inhibits grid when high-frequency drive to vibrate, reduces gallium nitride power device and open, turn off
The due to voltage spikes of device guarantees that gallium nitride power device is normal, reliably working.
The component that the present invention while guaranteeing stabilized driving gallium nitride power device, can reduce driving circuit uses
Quantity, reduces the cost of driving circuit, while being able to suppress gate driving oscillation, drop under gallium nitride power transistor high-frequency work
The problems such as due to voltage spikes of low gallium nitride power transistor switching process.
Detailed description of the invention
Fig. 1 circuit diagram of the present invention；
Fig. 2 one figure of circuit embodiment of the present invention；
Fig. 3 circuit of the present invention implements one bridge arm figure of composition；
Fig. 4 circuit of the present invention is implemented to form the schematic diagram of single-phase two level；
Fig. 5 circuit of the present invention implements the schematic diagram of composition two level of three-phase；
Fig. 6 present invention implements single-phase two level printed circuit board placement-and-routing schematic diagram；
Fig. 7 present invention implements two level printed circuit board placement-and-routing schematic diagram of three-phase；
Fig. 8 circuit of the present invention implements measured waveform figure.
Specific embodiment
Now in conjunction with embodiment, attached drawing, the invention will be further described:
Firstly, the driving method of gallium nitride power transistor high frequency grid, it is characterized in that the control wave in driving chip is defeated
Exit port guarantees that driving can come to ground, clamp diode guarantees driving voltage in normal range of operation, drive by pull down resistor
Dynamic chip output is absorbed on gate driving route close to the grid of gallium nitride power device using impedance radio-frequency suppressor
Interference, guarantee to work normally in the case where low frequency drives, high-frequency signal interference is lower to absorb interference to reduce driving high frequency spikes
Interference is absorbed in switching tube hourglass source electrode both ends peak absorbing module by nitrogenizing with preventing gallium nitride power transistor from misleading
Gallium power device opens due to voltage spikes caused by shutdown.
The gate driving circuit of gallium nitride power device includes: that gallium nitride power transistor, grid drive chip, grid are defeated
Line resistance, zener diode, impedance radio-frequency suppressor and peak absorbing module out.
Impedance radio-frequency suppressor, key property are as follows: very low impedance operator, one of equivalent circuit are presented at low frequency
Can abbreviation be the lesser resistance of resistance value, show higher impedance operator in high frequency, one of equivalent circuit can be seen as inductance L
With the series circuit of resistance R, ultra-high frequency signal can be absorbed, reduces electromagnetic interference, especially for gallium nitride power crystalline substance
The high-frequency drive operating condition of body pipe can effectively inhibit the interference such as oscillation under high-frequency signal.
For the driving of single gallium nitride power transistor, one is first passed through from the control wave output terminal mouth of driving chip
A pull down resistor guarantees that level is reliably low level when without driving wave output, then guarantees driving current by a series resistance
In OK range, a two-way clamp diode will drive the driving voltage of wave to be clamped in normal area of application, important
It is that nestle up the grid of gallium nitride tube device be impedance radio-frequency suppressor, for absorbing the High-frequency Interference of driving signal
Noise, thus guarantee the reliable and stable of driving signal, meanwhile, the drain-source both ends of gallium nitride power transistor are inhaled plus a spike
Module is received, due to voltage spikes caused by device work on-off is absorbed.
For device for power switching, an important indicator for measuring its characteristic is dv/dt and di/dt, dv/dt index
Power device is shown under conditions of rated junction temperature and breaking grid, device for power switching is transferred on the voltage of on-state by off-state
The rate of liter；Di/dt index shows the current changing rate that device for power switching is transferred to end state by opening state, the two transient changings
Amount can generate too high voltages spike and biggish electric current under the action of stray parameter, seriously affect the normal work of switching device
Make.
One in parallel adds an effective absorbed nitrogen of peak absorbing module between the hourglass source electrode of gallium nitride power transistor
Change gallium power transistor open, the due to voltage spikes in turn off process.
When application gallium nitride power transistor is composed in series a bridge arm job up and down, in addition to each nitridation described in upper section
Except the peak absorbing module of gallium power device hourglass source electrode parallel connection, bridge arm also needs peak absorbing module in parallel, this spike is inhaled
Due to voltage spikes caused by devices switch on bridge arm can effectively be absorbed by receiving module, guarantee the steady operation of gallium nitride power transistor,
Reduce voltage output harmonic wave.
Similarly, which proposes a kind of printed circuit board device layout wiring method about gallium nitride power device,
Its main feature includes: first and foremost, successively to be put according to circuit output trend to component in single-phase inversion application,
Shorten distance of the driving chip signal output end to gallium nitride power device grids, while appropriate feelings of cabling needs of driving signal
Increase width under condition to reduce the impedance of route；Before gallium nitride grid pin place impedance radio-frequency suppressor to filter out by
High frequency effect caused by the parasitic parameters such as route stray inductance；Each gallium nitride power device and bus by isolated cabling into
Row connection, is routed when gallium nitride power device is connect with power generatrix using " water flow draws method ", i.e. it is positive and negative to reduce bus for guarantee
Between cabling while distribution capacity, the crosstalk between different bridge arms is reduced；Every bridge arm Absorption Capacitance and every device peak absorbing module
Form and the positive and negative connection of bus are punched close to the pin of power device, and by paving copper, reduces route parasitic parameter bring
It influences；Processing identical with single-phase inversion is identical to be guaranteed for power section in three-phase inversion application, three-phase output is adopted
With expanded letter cabling to meet based on current needs, especially prevents the mutual crosstalk of three-phase outlet chamber and cause the oscillation of system.
Specific embodiment:
Fig. 1 is circuit diagram of the present invention, which includes driving chip, first resistor R1, second resistance R2, impedance high frequency
Suppressor, gallium nitride power transistor, the first zener diode ZN1 and peak absorbing module；The driving chip output end
It is connected to one end of the first resistor R1 and the second resistance R2, the other end connection of the first resistor R1
Extremely one end of the impedance radio-frequency suppressor and first zener diode, the impedance radio-frequency suppressor
Other end is connected to the grid of the gallium nitride power transistor；Then the other end of the second resistance R2 and institute
The other end of the first zener diode ZN1 stated is commonly connected to the source electrode of the gallium nitride power transistor；The point
Peak absorption module one end is connected to the drain electrode of gallium nitride transistor, and other end is connected to the gallium nitride power transistor
Source electrode.
Fig. 2 be wherein implementation diagram of the invention, the circuit include driving chip, first resistor R1, second resistance R2,
3rd resistor R3, the first magnetic bead FB1, gallium nitride power transistor, first capacitor C1 and the first zener diode ZN1；Described
Driving chip output end is connected to one end of the first resistor R1 and the second resistance R2, the first resistor R1
Other end be connected to one end of the first magnetic bead FB1 and first zener diode, first magnetic bead
The other end of FB1 is connected to the grid of the gallium nitride power transistor；Then other the one of the second resistance R2
The other end of end and the first zener diode ZN1 are commonly connected to the source electrode of the gallium nitride power transistor；Institute
The one end 3rd resistor R3 stated is connect with one end of the first capacitor C1, the other end connection of the 3rd resistor R3
To the drain electrode of gallium nitride transistor, the other end of the first capacitor C1 is connected to the gallium nitride power transistor
Source electrode.
The working principle of the circuit is: when the output end of driving chip output control wave is high level, under described
Pull-up resistor R2 stablizes to high level, is then adjusted by current-limiting resistance R1 big to the charging current of gallium nitride power transistor grid
Small, zener diode ZN1 guarantees that the driving wave voltage value of output is stablized in fixed range, and the magnetic bead FB1 is for filtering out
High-frequency signal on driver circuit guarantees the reliable and stable of driving wave；The resistance R3 and capacitor C1 is composed in series a RC
Absorbing circuit is used to absorb the due to voltage spikes of the drain-source interpolar of gallium nitride power transistor, can guarantee under this circuit form
The output control wave energy of chip is enough reliable and stable, reduces the High-frequency Interference on route, guarantees the normal of gallium nitride power transistor
Work.
RC absorbing circuit selects reference principle:
Resistance R3=((2~4) × 535) × Iα, wherein Iα=0.367*Id；
Capacitor's capacity C1=(2~4) × 10-8×Iα, wherein Iα=0.367*Id, IdFor power device operating current；
In practical application circuit, time constant RC usually takes 1~10ms in resistance-capacitance absorption circuit；
In material selection, resistance generally chooses metal film or cement resistor, and capacitor generally chooses CBB or other pressure resistances
Corresponding high frequency capacitor.
This Absorption Capacitance is with reference to the preferable thin-film capacitor of high frequency characteristics is chosen for, and capacitance is in 0.01uF~1.0uF, according to reality
Border selection flexible in application
Fig. 2 is the application allusion quotation example designed when circuit forms a bridge arm, this is that two groups of circuits are composed in series a bridge arm, phase
DC power supply DC and Absorption Capacitance C3 are increased than Fig. 1, the both ends Absorption Capacitance C3 are positive and negative with DC power supply DC respectively
Both ends are connected.
Fig. 3 is that the invention circuit design is single-phase two level inverse conversions application circuit, and compared with Fig. 2, this is by two bridges
Arm composes in parallel；Wherein draw output terminal out1 and out2.
Fig. 4 is that the invention circuit design is two level inverse conversion application circuit of three-phase, and compared with Fig. 3, this is by three bridges
Arm composes in parallel；Wherein draw output terminal U, V, W.
Fig. 5 is printed circuit board device layout schematic wiring diagram when circuit single-phase inversion of the present invention is applied, wherein driving
The cabling of chip controls output end to gallium nitride power device guarantees that distance is most short, using the driving chip as starting point, is driving
The corresponding control output pin right end of chip, the first resistor R1 and the first magnetic bead FB1 are placed in series in same row, at this
The resistance R2 is placed on one row top and zener diode ZN1 group is in a row, is first in the right end close to zener diode ZN1
Capacitor C1 and resistance R3 are composed in series a row, the grid that the right end close to the first magnetic bead FB1 is gallium nitride power device Q1；
This is the upper tube layout type in a bridge arm application, down tube layout are as follows: the resistance R4 and magnetic bead FB3 is placed in series in together
One row places the resistance R5 in this row lower part and zener diode ZN2 group is in a row, close to zener diode ZN2's
Right end is that capacitor C2 and resistance R6 is composed in series a row, the grid that the right end close to the magnetic bead FB3 is gallium nitride power device Q2
Pole；It is capacitor C3 close to the right part of upper tube and down tube, while including connector P1, P2 and P3.
Bridge arm 1 and bridge arm 1_1 form individual event inverter power side, and bus is divided into two cablings of primary and secondary in bus end cabling,
Each gallium nitride power device and positive and negative connect of bus are connected to main line by time line, guarantee equal-wattage cabling point between bridge arm
It opens.
Fig. 6 is printed circuit board device layout schematic wiring diagram when circuit three-phase inversion of the present invention is applied, with single-phase inversion
It is same when being connected with bus to take the form that time line is connected to main line that passes sequentially through compared to one gallium nitride power bridge arm of increase
Cabling.
Fig. 7 is that gallium nitride power transistor work wave is surveyed under the circuit, and the Vgs marked in figure is to drive wave
Shape, Vds are gallium nitride power transistor drain-source voltage waveform, can find out that waveform effect is preferable in this circuit arrangement from figure,
Shutdown voltage waveform burr very little is opened, practical application request is reached.
Experiment condition: DC voltage 200V, the square wave time distinguishes 20us and 10us twice, and driving voltage 10V, resistance R1 take
2 Ω of value, R2 value 10K, FB1 are magnetic bead, and 60 Ω of resistance value when characteristic is 100MH, resistance R3 are 10 Ω, capacitor 100pF, are driven
Dynamic chip is SI8230, gallium nitride power transistor TPH3206.
Claims (7)
1. a kind of driver based on gallium nitride power device, including gallium nitride power transistor and driving chip, feature exist
In further including first resistor R2, second resistance R1, impedance high frequency set between gallium nitride power transistor and driving chip
Suppressor, zener diode and peak absorbing module；First resistor R2 is parallel to the output end of driving chip, second resistance R1 with
The series connection of impedance radio-frequency suppressor is connect with gallium nitride power transistor de grid, zener diode and second resistance R1 and variable resistance
The end output end GND of driving chip is connected to after anti-radio-frequency suppressor is in parallel；Peak absorbing wired in parallel is in gallium nitride power crystalline substance
The drain electrode of body pipe output end and source electrode；The impedance radio-frequency suppressor uses magnetic bead；The peak absorbing module uses resistance
The series circuit of R3 and capacitor C1, the resistance R3 and capacitor C1 are composed in series a RC absorbing circuit.
2. the driver according to claim 1 based on gallium nitride power device, it is characterised in that: the resistance R3=((2
~4) × 535) × Iα, capacitor C1=(2~4) × 10-8×Iα, wherein Iα=0.367*Id, IdFor power device operating current.
3. a kind of bridge arm that the driver using as claimed in claim 1 or 2 based on gallium nitride power device is constituted, feature exist
In: when two drivers are constituted a bridge arm, one or more Absorption Capacitances are connected at bridge arm both ends.
4. a kind of constitute multi-phase inverter circuit using bridge arm described in claim 3, it is characterised in that: n bridge arm is constituted inversion
When circuit, one or more Absorption Capacitances are connected at each bridge arm both ends；N >=2.
5. a kind of layout for the printed circuit board for realizing the driver based on gallium nitride power device described in claim 1, special
Sign is: using driving chip as starting point, in the corresponding control output pin right end of driving chip, and second resistance R1 and magnetic bead FB1
It is placed in series in same row, a row of first resistor R2 and zener diode composition are placed on this row top, in two pole of pressure stabilizing
The right end of pipe is the row that capacitor C1 and resistance R3 are composed in series, and the right part of magnetic bead FB1 is the grid of gallium nitride device Q1, is being printed
The side of circuit board processed is equipped with input and output terminal P1, P2 and P3.
6. layout according to claim 5 and bridge arm as claimed in claim 3, it is characterised in that: when composition claim 3
Layout when the described bridge arm, upper and lower bridge arm drive part device are placed identical, and gallium nitride device upper and lower bridge arm is close to placing, and two
The RC absorbing circuit device of a device is individually positioned in the two sides up and down of bridge arm, places Absorption Capacitance C3 on the right side of bridge arm.
7. layout according to claim 5 and multi-phase inverter circuit as claimed in claim 4, it is characterised in that: work as composition
When the layout of multi-phase inverter circuit as claimed in claim 4, each gallium nitride device bridge arm and the positive and negative connection of bus, each bridge arm
Pass through time line and the positive and negative connection of main bus-bar respectively.
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| CN201821259506.4U CN208836020U (en) | 2018-08-06 | 2018-08-06 | Driver, bridge arm, multi-phase inverter circuit and printed circuit board layout based on gallium nitride power device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109067228A (en) * | 2018-08-06 | 2018-12-21 | 西北工业大学 | A kind of driver and printed circuit layout based on gallium nitride power device |
| CN110048699A (en) * | 2019-05-21 | 2019-07-23 | 哈尔滨工业大学 | A kind of gate driving circuit inhibiting the bridge arm crosstalk of GaN half-bridge module |
| CN110138249A (en) * | 2019-05-30 | 2019-08-16 | 广东美的制冷设备有限公司 | Intelligent power module and air conditioner |
| CN110401365A (en) * | 2019-08-12 | 2019-11-01 | 无锡派微科技有限公司 | GaN non-bridge PFC power module for high-power charger |
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2018
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109067228A (en) * | 2018-08-06 | 2018-12-21 | 西北工业大学 | A kind of driver and printed circuit layout based on gallium nitride power device |
| CN110048699A (en) * | 2019-05-21 | 2019-07-23 | 哈尔滨工业大学 | A kind of gate driving circuit inhibiting the bridge arm crosstalk of GaN half-bridge module |
| CN110048699B (en) * | 2019-05-21 | 2023-04-11 | 哈尔滨工业大学 | Gate drive circuit for restraining bridge arm crosstalk of GaN half-bridge module |
| CN110138249A (en) * | 2019-05-30 | 2019-08-16 | 广东美的制冷设备有限公司 | Intelligent power module and air conditioner |
| CN110138249B (en) * | 2019-05-30 | 2021-05-28 | 广东美的制冷设备有限公司 | Intelligent power module and air conditioner |
| CN110401365A (en) * | 2019-08-12 | 2019-11-01 | 无锡派微科技有限公司 | GaN non-bridge PFC power module for high-power charger |
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