CN208836011U - A kind of high-voltage large current mixed type SiC-IGBT applying unit - Google Patents
A kind of high-voltage large current mixed type SiC-IGBT applying unit Download PDFInfo
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- CN208836011U CN208836011U CN201821404074.1U CN201821404074U CN208836011U CN 208836011 U CN208836011 U CN 208836011U CN 201821404074 U CN201821404074 U CN 201821404074U CN 208836011 U CN208836011 U CN 208836011U
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Abstract
The utility model discloses a kind of high-voltage large current mixed type SiC-IGBT applying units, including radiator, mixed type SiC-IGBT power device, driving plate, electric connecting part, insulating element, Absorption Capacitance, discharge resistance, fender bracket and frame assembly；Mixed type SiC-IGBT power device unilateral side is placed on radiator side, and the frame assembly equipped with driving plate is placed on the other side of radiator, and Absorption Capacitance and discharge resistance are placed on rear side of radiator；Mixed type SiC-IGBT power device, Absorption Capacitance and discharge resistance are connect with electric connecting part；Electric connecting part is equipped with the output interface for docking with external device (ED), which is placed on insulating element.It can be applied in High power AC drive system, for realizing characteristics such as the lightweight of High power AC drive system, low-loss and high switching frequencies.
Description
Technical field
The utility model belongs to power electronics field, is related to power device, and especially a kind of high-voltage large current is mixed
Mould assembly SiC-IGBT applying unit.
Background technique
With the development of power electronics technology, Technics of Power Electronic Conversion system puts forward higher requirements efficiency and volume,
Currently, device power consumption and the contradiction of switching frequency become increasingly conspicuous in Si-IGBT application, to further increase system effectiveness and power
Density, under the same conditions, compared with Si-IGBT, wide band gap semiconductor device (based on SiC device) of new generation has low function
The performance characteristics of consumption, miniaturization and high power density, to realize the small of power cell, periphery component and cooling system
Type, light-weight design.
At this stage, SiC power device mainly includes SiC mixed type IGBT (Si-IGBT and SiC Schottky diode) and complete
SiC power device.
External multiple companies have developed the high-power full SiC and SiC of suitable track transportation industry application at present
Mixed type IGBT module；But for mixed type SiC-IGBT more than 3300V grade, external and domestic corporation surveys also in product
The examination stage does not generate batch application state also.
And the power device of the prior art is Si-IGBT, loss is high, limits the growth of switching frequency, characteristic limit
The development of High-power AC drives technology has been made, specifically:
Si-IGBT refers to that IGBT material is silicon materials (chemical symbol Si).Current Semiconductor Converting Technology developing stage, Si-
IGBT is the main product of power conversion, and Si-IGBT is mature, high volume applications are in great power conversion circuit drive technology.Tradition
The freewheeling diode that Si-IGBT power device internal parallel uses is Si power diode, and reverse recovery loss is larger, makes power
Device overall losses are bigger than normal.In High power AC drive system, switching frequency is higher, and control is more accurate, voltage needed for loading,
Current harmonics is smaller, but since Si-IGBT power loss is directly proportional to switching frequency, power loss is too big, and Si-IGBT occurs
Failure and stop working, therefore the characteristic of Si-IGBT make the control technology of Large-power Driving System application be very limited.
Simultaneously because Si-IGBT device loss increases, to guarantee that its reliably working, cooling system also need to be made big, cause entirely to become
Weight, the volume for flowing device are also very big.
Utility model content
The shortcomings that the purpose of the utility model is to overcome the above-mentioned prior arts provides a kind of high-voltage large current mixed type
SiC-IGBT applying unit can be applied in High power AC drive system, for realizing High power AC drive system
The characteristics such as lightweight, low-loss and high switching frequency.
The purpose of this utility model is achieved through the following technical solutions:
This high-voltage large current mixed type SiC-IGBT applying unit, including radiator, mixed type SiC-IGBT function
Rate device, driving plate, electric connecting part, insulating element, Absorption Capacitance, discharge resistance, fender bracket and frame assembly；It is described mixed
Mould assembly SiC-IGBT power device unilateral side is placed on radiator side, and the frame assembly equipped with driving plate is placed on radiator
The other side, Absorption Capacitance and discharge resistance are placed on rear side of radiator；Mixed type SiC-IGBT power device, Absorption Capacitance
It is connect with discharge resistance with electric connecting part；The output that the electric connecting part is equipped with for docking with external device (ED) connects
Mouthful, which is placed on insulating element.
Further, above-mentioned driving plate is the IGBT driving board of 3300V/1200A.
Further, above-mentioned Absorption Capacitance and discharge resistance composition RC absorbing circuit are to reduce mixed type SiC-IGBT power
The shutdown voltage of device.RC absorbing circuit is arranged on a bridge arm of mixed type SiC-IGBT power device.
Further, above-mentioned Absorption Capacitance is 8.7uF.
Further, above-mentioned discharge resistance is 500K Ω, power 250W.
Compared with prior art, the utility model has the following beneficial effects:
The high-voltage large current mixed type SiC-IGBT applying unit of the utility model, can make mixed type SiC-IGBT
Power dissipation ratio Si-IGBT reduce about one third under the conditions of comparable applications, to make entire applying unit power consumption reduce, effectively
Reduce the complexity of cooling system.
Further, the applying unit of the utility model is compact-sized, and volume is obviously reduced compared with the existing technology, so that
The total of current transformer becomes smaller.
Detailed description of the invention
Fig. 1 is that four-quadrant rectifies applying unit main circuit topological structure figure in the utility model embodiment；
Fig. 2 is the applying unit assembled view of the utility model.
Wherein: 1 is radiator；2 be mixed type SiC-IGBT；3 be driving plate；4 be electric connecting part；5 be insulation
Component；6 be Absorption Capacitance C；7 be discharge resistance；8 be fender bracket；9 be frame assembly.
Specific embodiment
The utility model is described in further detail with reference to the accompanying drawing:
Referring to fig. 2: the high-voltage large current mixed type SiC-IGBT applying unit of the utility model, including radiator 1,
Mixed type SiC-IGBT power device 2, driving plate 3, electric connecting part 4, insulating element 5, Absorption Capacitance 6, discharge resistance 7,
Fender bracket 8 and frame assembly 9；2 unilateral side of mixed type SiC-IGBT power device is placed on 1 side of radiator, and driving plate 3 is housed
Frame assembly 9 be placed on the other side of radiator 1, Absorption Capacitance 6 and discharge resistance 7 are placed on 1 rear side of radiator；It is mixed
Mould assembly SiC-IGBT power device 2, Absorption Capacitance 6 and discharge resistance 7 are connect with electric connecting part 4；Electric connecting part 4 is set
There is the output interface for docking with external device (ED), which is placed on insulating element 5.
Absorption Capacitance 6 and discharge resistance 7 form pass of the RC absorbing circuit to reduce mixed type SiC-IGBT power device 2
Power-off pressure.RC absorbing circuit is arranged on a bridge arm of mixed type SiC-IGBT power device 2.
The utility model is described in further details with attached drawing with reference to embodiments:
Embodiment
The present embodiment describes power by taking four-quadrant rectified power unit most common in High power AC drive system as an example
Device is the applying unit design process of mixed type SiC-IGBT:
Driving problems: since IGBT material is still Si, inverse parallel two inside mixed type SiC-IGBT power device package
Pole pipe material is SiC, therefore the driving circuit of mixed type SiC-IGBT power device is still identical as IGBT.
Absorbing circuit: mixed type SiC-IGBT power device opens turn off process due to inverse parallel in mixed type SiC-IGBT
Diode material is SiC, and Reverse recovery speed is fast, and loss is low, this results in the shutdown voltage of entire IGBT module can be high, directly
Connecing influences IGBT performance, therefore RC absorbing circuit is filled on a bridge arm.RC absorbing circuit is inhaled by a discharge resistance R and spike
Receive capacitor C composition.The calculating of Absorption Capacitance is as follows:
Inhibit the voltage value between C-E of IGBT using the method for connecing Absorption Capacitance in DC loop.
Lp---- main circuit busbar distributed inductance, generally takes 1uH/m；
Δ U--- maximum voltage spike
The maximum operating currenbt of I0----- switching device
The calculating of discharge resistance: the voltage of module capacitance need to be by conductive discharge, and R can value, i.e. R=t/ (Cs* as the following formula
|ln(50/Umax) |), in which: t is discharge time；UmaxFor DC loop maximum voltage.
Topology layout: since mixed type SiC-IGBT encapsulation is made into system type with Si-IGBT, therefore the three-dimensional structure of Si-IGBT
It is completely suitable for mixed type SiC-IGBT；Specific structure is as shown in Figure 2.
Power consumption calculation: since mixed type SiC-IGBT input-output characteristic and Si-IGBT characteristic are completely the same, therefore its power consumption
Calculation is identical.But since the anti-paralleled diode material of mixed type SiC-IGBT is SiC, therefore its loss is less than Si-IGBT.
Fig. 1 is that the present embodiment four-quadrant rectifies applying unit main circuit topological structure, and it includes power device, driving are single
Member, absorbing circuit, high-voltage connection device composition.
Further, the present embodiment is 3300V/1200A mixed type SiC-IGBT applying unit, which makes
With the IGBT driving board of 3300V/1200A.By calculating, the Absorption Capacitance value and resistance value of selection are respectively 8.7uF, 500K Ω
(resistor power 250W).
In conclusion mixed type SiC-IGBT is using diode material is that (chemical symbol is silicon carbide in encapsulation in IGBT
SiC characteristic) reduces diode reverse recovery losses, and then reduces IGBT overall losses.The driving for solving power device is asked
The problem of topic, switching frequency turn off overvoltage caused by increasing and power module architectures and loss calculation problem.This is practical new
Type is suitable for the applying unit of mixed type SiC-IGBT characteristic, applies in High power AC drive system, for realizing big function
The characteristics such as lightweight, low-loss and the high switching frequency of rate alternating-current actuating system.
Claims (6)
1. a kind of high-voltage large current mixed type SiC-IGBT applying unit, which is characterized in that including radiator (1), mixing
Type SiC-IGBT power device (2), driving plate (3), electric connecting part (4), insulating element (5), Absorption Capacitance (6), electric discharge
Resistance (7), fender bracket (8) and frame assembly (9)；Mixed type SiC-IGBT power device (2) unilateral side is placed on heat dissipation dress
(1) side is set, the frame assembly (9) equipped with driving plate (3) is placed on the other side of radiator (1), Absorption Capacitance (6) and puts
Resistance (7) is placed on rear side of radiator (1)；Mixed type SiC-IGBT power device (2), Absorption Capacitance (6) and electric discharge electricity
Resistance (7) is connect with electric connecting part (4)；The output that the electric connecting part (4) is equipped with for docking with external device (ED) connects
Mouthful, which is placed on insulating element (5).
2. high-voltage large current mixed type SiC-IGBT applying unit according to claim 1, which is characterized in that the drive
Movable plate (3) is the IGBT driving board of 3300V/1200A.
3. high-voltage large current mixed type SiC-IGBT applying unit according to claim 1, which is characterized in that the suction
Receive the shutdown electricity of capacitor (6) and discharge resistance (7) composition RC absorbing circuit to reduce mixed type SiC-IGBT power device (2)
Pressure.
4. high-voltage large current mixed type SiC-IGBT applying unit according to claim 3, which is characterized in that the RC
Absorbing circuit is arranged on a bridge arm of mixed type SiC-IGBT power device (2).
5. high-voltage large current mixed type SiC-IGBT applying unit according to claim 1, which is characterized in that the suction
Receiving capacitor (6) is 8.7uF.
6. high-voltage large current mixed type SiC-IGBT applying unit according to claim 1, which is characterized in that described to put
Resistance (7) is 500K Ω, power 250W.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821404074.1U CN208836011U (en) | 2018-08-29 | 2018-08-29 | A kind of high-voltage large current mixed type SiC-IGBT applying unit |
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| CN201821404074.1U CN208836011U (en) | 2018-08-29 | 2018-08-29 | A kind of high-voltage large current mixed type SiC-IGBT applying unit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109494993A (en) * | 2018-08-29 | 2019-03-19 | 西安中车永电电气有限公司 | A kind of high-voltage large current mixed type SiC-IGBT applying unit |
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2018
- 2018-08-29 CN CN201821404074.1U patent/CN208836011U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109494993A (en) * | 2018-08-29 | 2019-03-19 | 西安中车永电电气有限公司 | A kind of high-voltage large current mixed type SiC-IGBT applying unit |
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