CN208580758U - A kind of LED epitaxial slice and light emitting diode - Google Patents
A kind of LED epitaxial slice and light emitting diode Download PDFInfo
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- 230000000737 periodic effect Effects 0.000 claims abstract description 30
- 238000005036 potential barrier Methods 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 29
- 229910002601 GaN Inorganic materials 0.000 claims description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 7
- 230000005855 radiation Effects 0.000 abstract description 6
- 230000006798 recombination Effects 0.000 abstract description 5
- 238000005215 recombination Methods 0.000 abstract description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 17
- 230000004888 barrier function Effects 0.000 description 7
- 230000012010 growth Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000032683 aging Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 102000016550 Complement Factor H Human genes 0.000 description 1
- 108010053085 Complement Factor H Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
The utility model provides a kind of LED epitaxial slice and light emitting diode, it includes N-type conductting layer, multiple quantum wells and p-type conductting layer, each period stacking order is the first sublayer, the second sublayer and third sublayer at least two periodic structures of multiple quantum wells, first sublayer is potential well, second sublayer is potential barrier, and the relationship of the energy level band gap Eg3 of the energy level band gap Eg1 of first sublayer, the energy level band gap Eg2 of the second sublayer and third sublayer are Eg1 < Eg2 < Eg3.Extra potential barrier can provide preferably limitation effect, in element operation, energy band inclination caused by under applying bias situation, generate the protrusion (potential barrier spike) of a high band gap potential barrier, by this special energy band difference design, carrier overflow can be more prevented, radiation recombination efficiency is increased, promotes brightness.
Description
Technical field
The utility model relates to semiconductor devices extension fields, and in particular to one kind has high level band gap (Energy
Bandgap, abbreviation Eg) multiple quantum wells light emitting diode.
Background technique
Light emitting diode (LED, Light Emitting Diode) is a kind of semiconducting solid luminescent device, utilizes half
Conductor PN junction can directly convert the electricity into light as luminescent material.Light emitting diode generally comprises n type semiconductor layer, shines
The epitaxial structure in area and p type semiconductor layer.Light emitting region is often used multi-quantum pit structure, and multi-quantum pit structure is initially two kinds not
Same semiconductor material thin film is stacked with the potential well to form electronics or hole, and multiple quantum wells shines by being limited in well layer
Electron hole pair radiation recombination realize.In use, the both ends LED are plus after voltage, carrier by tunnelling, diffusion or
The form of heat emission enters multiple quantum wells, the carrier of injection it is most of by multiple quantum wells capture and limit wherein, by
Radiation recombination issues light in well layer, and luminous wavelength depends on the energy level band gap of used well layer material.Light emission luminance depends on
In internal quantum efficiency and light extraction efficiency, and improving internal quantum efficiency is mainly to pass through the adjusting of multi-quantum pit structure, as well depth,
Thickness, component and structure etc..
Utility model content
The utility model provides a kind of LED epitaxial slice, light emitting diode is used for, by traditional Multiple-quantum
Increase the semiconductor layer of more high level band gap in the periodic structure of two kinds of semiconductor stacks of potential well and potential barrier of trap to improve the period
The energy level band gap of structure is distributed, so as to improve luminous efficiency and leakage function.
The technical solution of the utility model are as follows: a kind of LED epitaxial slice comprising N-type conductting layer, multiple quantum wells
With p-type conductting layer, it is characterised in that: each period stacking order is the first son at least two periodic structures of multiple quantum wells
Layer, the second sublayer and third sublayer, first sublayer are potential well, and second sublayer is potential barrier, and first sublayer
Energy level band gap Eg1, the second sublayer energy level band gap Eg2 and third sublayer energy level band gap Eg3 relationship be Eg1 < Eg2 <
Eg3。
Preferably, the multiple quantum wells includes periodic stacks structure, including the first sublayer and the second sublayer are stacked as
At least one period and above-mentioned at least stacking order are at least two periods of the first sublayer, the second sublayer and third sublayer.
It is highly preferred that the difference of third the sublayer Eg3 and Eg2 are at least 1.5eV.
It is highly preferred that the third sublayer with a thickness of 30 angstroms or less.
It is highly preferred that the overall thickness of the multiple quantum wells is 100 ~ 3000 angstroms.
It is highly preferred that first sublayer with a thickness of 50-80 angstroms.
It is highly preferred that second sublayer with a thickness of 150 ~ 210 angstroms.
It is highly preferred that the light emitting diode is gallium nitride based diode.
The third sublayer is AlwGa1-wN, 0.95≤w≤1.
It is highly preferred that the energy level band gap difference of the Eg1 of the Eg2 and the first sublayer of second sublayer be 0.25 ~
0.30eV range.
It is highly preferred that the lumination of light emitting diode wavelength region be it is ultraviolet, it is highly preferred that the emission wavelength is
350-370nm。
It is highly preferred that the Eg1 range of first sublayer is between 3.3 ~ 3.5eV, the Eg2 range of the second sublayer is
Between 3.55 ~ 3.90.
It is highly preferred that the Eg1 range of first sublayer is between 3.3 ~ 3.4eV, the Eg2 range of the second sublayer is
Between 3.59 ~ 3.7eV, the Eg3 of the third sublayer is between 6.0 ~ 6.2eV.
It is highly preferred that first sublayer is InxGa1-xN(0 < x < 1), Eg1 is adjusted by In content, more
Preferably, the x content is between 0 ~ 0.03.
It is highly preferred that second sublayer is InyAlzGa1-y-zN(0≤y≤1,0≤z≤1), contained by In and Al
The adjustment of amount and adjust Eg2.It is highly preferred that the y content, between 0 ~ 0.02, the z content is located at 0.06 ~ 0.12
Between.
It is highly preferred that the third sublayer is AlwGa1-wN(0≤w≤1), it is adjusted by the adjustment of Al content
Eg3, the w content is between 0.95-1.
More preferably, it is preferable that when the w is 1, the third sublayer is AlN, Eg3 6.2, the third
Sublayer with a thickness of 10 ~ 15 angstroms.
It is highly preferred that the light emitting diode that the multiple quantum wells obtains can be made as formal dress or upside-down mounting or vertical-type or micro-
Type light emitting diode.
Preferably, the multiple quantum wells includes periodic stacks structure, wherein the stacking of all periodic stacks structures
Sequence is to stack at least two periods of the first sublayer, the second sublayer and third sublayer, wherein the energy of first sublayer
The relationship of the energy level band gap Eg3 of grade band gap Eg1, the energy level band gap Eg2 of the second sublayer and third sublayer are Eg1 < Eg2 < Eg3.
Preferably, at least one periodic structure of the multiple quantum wells, the first sublayer is further by least two half
Conductor material stacks, and the stack manner of at least two semiconductor materials is to move closer to the second sublayer side Eg from low to high.
Preferably, at least one periodic structure of the multiple quantum wells, the second sublayer is further by least two half
Conductor material stacks, and the stack manner of at least two semiconductor materials is to be gradually distance from the first sublayer side Eg from low to high.
Preferably, at least one periodic structure of the multiple quantum wells, third sublayer is further by least two half
Conductor material stacks, and the stack manner of at least two semiconductor materials is to be gradually distance from the second sublayer side Eg from low to high simultaneously
And all it is higher than the Eg2 of the second sublayer, it is highly preferred that the Eg of at least two semiconductor materials of the third sublayer is above second
The Eg2 of sublayer at least 1.5eV.
The utility model proposes the epitaxial structure can be widely applicable for the light emitting diodes of all light emitting regions,
The multi-quantum pit structure provides luminous radiation in the light emitting diode, by traditional two layers different semiconductor material group
At trap and build repeat sexual cycle stack multi-quantum pit structure on the basis of, the multiple quantum wells at least two layers every
One band gap of more growths is higher than the additional limitation layer (Eg3) of barrier layer (Eg2) in a stack of barrier layer, and extra potential barrier can mention
For preferably limiting to effect, in element operation, the caused energy band inclination under applying bias situation such as imports third
The difference of layer Eg3 and Eg2 is at least 1.5eV, will generate protrusion (the potential barrier of a high band gap potential barrier
Spike), designed by this special energy band difference, can more prevent carrier overflow, increase radiation recombination efficiency, promote brightness.
In addition, band gap height means to control suitable thickness E g3 layers in each layer of MQW, Neng Gouyou closer to insulation
Effect guarantees its limitation effect to carrier, while can stop backward current, improves the leakage current ability of aging.
Other features and advantages of the utility model will illustrate in the following description, also, partly from specification
In become apparent, or understood and implementing the utility model.The purpose of this utility model and other advantages can pass through
Specifically noted structure is achieved and obtained in the specification, claims and drawings.
Detailed description of the invention
Attached drawing is used to provide a further understanding of the present invention, and constitutes part of specification, practical with this
Novel embodiment is used to explain the utility model together, does not constitute limitations of the present invention.In addition, attached drawing data are
Summary is described, is not drawn to scale.
Fig. 1 is the structural schematic diagram of one light emitting diode of the utility model embodiment a sample.
Fig. 2 a, 2b are that the TEM of one light emitting diode of the utility model embodiment a sample schemes.
Fig. 3 is that the X-ray energy spectral line of the Quantum Well of light emitting diode is scanned into minute wheel exterior feature analysis chart.
Fig. 4 is the wavelength-brightness scatter plot of the utility model embodiment one.
Fig. 5-8 is the structural schematic diagram for the light emitting diode that the utility model embodiment two arrives embodiment seven.
Specific embodiment
For a kind of light emitting diode with high level band gap superlattice layer of the utility model is more readily understood in fact
Matter feature and its practicability having below just are made several specific embodiments of the utility model in conjunction with attached drawing further detailed
It describes in detail bright.But the description and explanation below in relation to embodiment are not limited in any way scope of protection of the utility model.
It should be appreciated that purpose of the term used in the utility model merely for description specific embodiment, rather than purport
In limitation the utility model.As used in the utility model, singular "a", "an" and "the" is also intended to including multiple
Number form formula, in addition to context clearly illustrates.It is to be further understood that term "comprising", " packet ought be used in the present invention
Include ", " containing " when, for show statement feature, entirety, step, operation, the presence of element, and/or packaging part, without arrange
Except the presence or increase of other one or more features, entirety, step, operation, element, packaging part, and/or their combination.
Unless defined otherwise, all terms (including technical terms and scientific terms) used in the utility model have
Meaning identical with the meaning that the utility model those of ordinary skill in the art are generally understood.It is to be further understood that this
Term used in utility model should be understood have with these terms in the context and related fields of this specification
Meaning consistent meaning, and should not be understood with idealization or meaning too formal, except clear such in the utility model
Except definition.
First preferred embodiment of the utility model is gallium nitride based light emitting diode epitaxial structure, but not limited to this.It can
In conversion, light emitting diode can have formal dress or flip chip type structure.Fig. 1 shows epitaxy junction used by the light emitting diode
Structure schematic diagram, the epitaxial structure successively include: N-type conductting layer 110, luminescent layer 120, P-type electron barrier layer from the bottom to top
130 and p-type conductting layer 140.MOCVD growth obtains in the epitaxial structure epitaxial growth substrate of the light emitting diode.Epitaxial structure
Chip is obtained by the way that p-type conductting layer side to be transferred in permanent substrate, the utility model uses existing vertical LED
Preparation method obtains.
Wherein N-type conductting layer 110 and p-type conductting layer 140 are made of nitride based semiconductor layer, have than luminescent layer
120 broader band gap in the particular embodiment can be with AlGaN layer or GaN.
Between luminescent layer 120 and p-type conductting layer 140, energy level band gap is connected P-type electron barrier layer 130 greater than p-type
The energy level band gap of layer 140, is made of the nitride based semiconductor layer containing Al, can be single or multi-layer structure, such as super brilliant
Lattice structure.
Luminescent layer 120 is made of at least two periodic structures, and each periodic structure generally includes at least two different materials
Laminate structure, material be nitride based semiconductor layer, preferably unintentional doping, wherein at least two periodic structure A
Comprising the first sublayer, the second sublayer and third sublayer, wherein stating the energy level band of the energy level band gap Eg1 of the first sublayer, the second sublayer
The relationship of gap Eg2 and the energy level band gap Eg3 of third sublayer are Eg1 < Eg2 < Eg3, wherein the first sublayer is used as trap, the second son
Layer is superimposed one layer of third sublayer as use is built again on the layer at base, and preferably limitation effect can be provided by forming extra potential barrier,
When element operation, under applying bias situation caused by energy band inclination, by this high band gap potential barrier protrusion (Eg3,
Potential barrier spike) carrier overflow can be more prevented, increase radiation recombination efficiency, promotes brightness.In addition, band
Gap height means such as to grow thickness E g3 layers appropriate closer to insulation in each layer of MQW, can will more stop backward current,
Improve the leakage current ability of aging.In addition, the ladder-like potential barrier (Eg2 < Eg3) also contributes to adjusting answering for entire MQW trap base
Power.Third sublayer Eg3 is preferably greater than Eg2 at least 1.5eV, to guarantee its limitation effect to carrier, effectively prevent current-carrying
The overflow situation of son.Thickness is preferably 30 angstroms or less.The thickness of first sublayer and the second sublayer is used to adjust the thickness at trap and base,
If the thickness of third sublayer is relatively thin, the limitation effect that extra potential barrier can provide is not obvious enough, if the thickness of third sublayer is thicker,
It will lead to that its electric conductivity is poor, the reduced performance of luminous zone, voltage increases.
The structure is more preferably suitable for nitride based light-emitting diode, emission wavelength 210-420nm.Preferably, the period ties
Structure A can use InGaN/AlGaN/AlN, GaN/AlGaN/AlN or InGaN/AlInGaN/AlN or InGaN/GaN/
AlN.Such as first sublayer 121 can use InxGa1-xN, wherein the adjustable emission wavelength of x value size is sent out if x is larger
Optical wavelength is shorter, and emission wavelength is longer if x is smaller, and the second sublayer 122 can use InyAlzGa1-y-zWherein 0≤y≤1 N(,
0≤z≤1, y+z≤1), third sublayer 123 is preferably that AlwGa1-wN(w is between 0 ~ 1).Meanwhile passing through the In of the first sublayer
Content can adjust Eg1, adjustable by third sublayer Al content by the second sublayer adjustable Eg2 of Al and In content
Eg3.First sublayer Eg1 is preferably 3.3-3.5eV, more preferably 3.3-3.4eV, and thickness is preferably 300 angstroms hereinafter, the second sublayer
Eg2 is preferably 3.55-3.9eV, and more preferably 3.59-3.70 eV thickness is preferably 300 angstroms or less.The Eg3 of third sublayer is big
In 1.5eV, it is highly preferred that third sublayer is AlN, Eg3 6.2eV, the third sublayer with a thickness of 10-15 angstroms.In addition,
Iii-nitride light emitting devices, the material of the main trap and base that Quantum Well is obtained using In and Al doping, and the arrangement of lattice constant
Trend is InN < GaN < AlN, by the utility model, realizes multi-quantum pit structure by lattice constant change in ladder shape (such as first
The sublayer of sublayer InGaN < second InAlGaN or AlGaN < third sublayer AlGaN or AlN) material stacking constituted, also help
In the Lattice Matching for adjusting entire MQW trap base, facilitates stress release, promote crystal quality.On the contrary, if the Eg3 is set
Between being placed in trap and building, carrier mobility is more difficult relative to the stepped structure of the utility model, and for the third of Eg3
Stress difference between sublayer and the first sublayer is larger, for stress release and suitable not as good as the cascade arrangement of the utility model
Sequence.
The ultraviolet LED vertical chip sample for being below 365-370nm for two kinds of main light emission wavelength, permanent substrate are silicon lining
Bottom, P-type electron barrier layer AlGaN.Chip size is 325 μm * 325 μm, and wherein sample one uses epitaxy junction shown in FIG. 1
Structure, growth substrates are sapphire, n type semiconductor layer AlGaN, p type semiconductor layer AlGaN, the specifically use of luminescent layer 120
InxGa1-xN(x content is 0.5 at%, and layer average thickness is 76 angstroms)/AlzGa1-zN(z content is 8at%, layer average thickness is
177 angstroms) tri- layers of/AlN be alternately stacked (layer average thickness be 10 angstroms), amount of cycles 5, the high level bandgap structure of formation, sample
Unlike product two, multiple quantum wells is using the stacked structure of conventional InGaN and AlGaN, and other layers are identical as sample one, volume
Sub- well layer uses InxGa1-xN(x content for 0.5 at%, and layer average thickness is 76 angstroms)/AlzGa1-zN(z content is 8at%, layer
Average thickness is 177 angstroms) it is alternately stacked to form a cycle for two layers, amount of cycles 5.
Fig. 2 a is the transmission electron microscope picture of sample one, it can be found that luminescent layer multiple quantum wells is the stacking in five periods from figure
Structure.Fig. 2 b is the transmission electron microscope picture of one multiple quantum well layer amplification factor of sample, can be measured first in each periodic structure
Sublayer, the second sublayer, the thickness distribution situation of third sublayer.
Fig. 3 is the EDX linear scan ingredient edge analysis figure of multiple quantum wells, as can be seen from the figure periodic structure quantity
And Al content variation tendency in each period, and generally determine the stack manner of each periodic structure and relatively thick
Degree.
Fig. 4 shows wavelength-brightness scatter plot under sample one (a and b) and sample two (a and b) electric current 150mA, due to
It is circular configuration that MOCVD, which grows used carrier when epitaxial wafer, and the epitaxial wafer of the different location on carrier will lead to life
Long quality is different, therefore two epitaxial wafer samples of the sample one of position same in carrier and sample two are compared,
Wherein the solid dot test data on right side indicates the growth sample of two positions of sample one, the test data of the solid dot in left side
Indicate the growth sample of two positions of sample two.Figure 4, it can be seen that the launch wavelength of two samples is all 365- in wave band
It is distributed between 370nm, the light emission luminance of two samples of sample one is apparently higher than the light emission luminance of sample two, i.e., sample one is bright
Degree is substantially improved.And by testing hot cold conditions factor H/C(brightness ratio under the conditions of 85 DEG C and 25 DEG C), sample one (a and b)
H/C be 78-80%, it is high relative to traditional H/C value (being lower than 70%), effectively improve the brightness constancy of hot operation.
By above two sample under conditions of environment temperature is 65 DEG C, 125 DEG C of junction temperature, applies electric current 150mA aging and survey
48H or 96H is tried, the tracking testing current experiment of backward voltage 5V, electricity when that △ IR is indicated is 48H or 96H are then applied
The difference of the current value of flow valuve and most initial state, this difference is smaller, and the quantum well quality for representing diode is better, and PN junction is anti-
Current lead-through mistake is less tended to have under to voltage, it is meant that element has more stable reverse characteristic on subsequent operate with, and surveys
Try following parameters.From following table one as can be seen that the tracking electric current of sample one (a, b) is obviously improved.
Table one
In embodiment in front, the periodic structure of the luminescent layer 120 of light emitting diode is mainly by the first periodic structure A
(including the first sublayer 121, the second sublayer 122 and third sublayer 123) is constituted.
Utility model is in another embodiment (embodiment two), luminescent layer 120 or fabricated structure, such as extremely
Few to be made of the first periodic structure A and second of periodic structure B, wherein each sublayer of the first periodic structure A can refer to
The structure of embodiment one is configured, and second of periodic structure B only needs to be made of the 4th sublayer 124 and the 5th sublayer 125,
In the materials of the four, the 5th sublayers can be identical to the second sublayer as the first sublayer, can also be different.
In a specific embodiment three, the first periodic structure A is arranged adjacent to P-type electron barrier layer 130, and second
Periodic structure B is arranged adjacent to N-type conductting layer 110, and the 4th sublayer 124 uses material layer identical with the first sublayer 121, the 5th son
Layer 125 uses material identical with the second sublayer 122, such as period 1 structure A is the structure of sample one: InGaN/AlGaN/
AlN, periodicity are two or more, such as 2-29 period, and second round structure B uses the structure I nGaN/AlGaN of sample two
Setting, periodicity are more than one, such as 1-28, referring to Fig. 5.
In another specific embodiment four, the first periodic structure A is arranged adjacent to N-type conductting layer 110, and second week
Phase structure B nearby electron barrier layer 130 is arranged, and the 4th sublayer 124 uses material layer identical with the first sublayer 121, the 5th son
Layer 125 uses material identical with the second sublayer 122, such as period 1 structure A is the InGaN/AlGaN/AlN of sample one,
Its periodicity is two or more, such as 2-29 period, and second round structure B is arranged using the structure I nGaN/AlGaN of sample two,
Its periodicity is more than one, such as 1-28.
In another specific embodiment five, the first sublayer of at least one periodic structure is two kinds of semiconductor materials
It is composed, the stacking order of two kinds of semiconductor layer materials 1211 and 1212 is the form of Eg from low to high.Such as sample one
Structure: InGaN/AlGaN/AlN, periodicity is 2 or more, such as the 2-29 period, InxGa1- in the wherein at least one period
XN is that the specific x content of In(of two kinds of different contents is 0 ~ 0.03) it stacks, such as Fig. 6.
In a specific embodiment six, the second sublayer of at least one periodic structure is two kinds of semiconductor material groups
It closes, the stacking order of two kinds of semiconductor layer materials 1221 and 1222 is the form of Eg from low to high.Such as the knot of sample one
Structure: InGaN/AlGaN/AlN, periodicity is 2 or more, such as the 2-29 period, the second sublayer in the wherein at least one period
It is formed for the InyAlzGa1-y-zN of different y and z, adjusts at least two half of the second sublayer by the adjustment of In and Al content
The Eg of conductor material.It is highly preferred that the y content is between 0 ~ 0.02, the z content between 0.06 ~ 0.12,
Such as Fig. 7.
In a specific embodiment seven, the third sublayer of at least one periodic structure is two kinds of semiconductor material groups
It closes, the stacking order of at least two semiconductor layer materials 1231 and 1232 is the form of Eg from low to high.Such as sample one
Structure: InGaN/AlGaN/AlN, periodicity are 2 or more, such as 2-29 period, it is furthermore preferred that at least one period
AlN replaces with AlGaN and AlN combination stacked and forms, the Eg of at least two semiconductor material of third sublayer be preferably greater than Eg2 extremely
It is less 1.5eV, such as Fig. 8.
The above is only the preferred embodiment of the utility model, it is noted that for the common skill of the art
Art personnel can also make several improvements and modifications without departing from the principle of this utility model, these improvements and modifications
Also it should be regarded as the protection scope of the utility model.
Claims (24)
1. a kind of LED epitaxial slice comprising N-type conductting layer, multiple quantum wells and p-type conductting layer, it is characterised in that: more
Each period stacking order is the first sublayer, the second sublayer and third sublayer, institute at least two periodic structures of Quantum Well
Stating the first sublayer is potential well, and second sublayer is potential barrier, and the energy level band gap Eg1 of first sublayer, the second sublayer
The relationship of energy level band gap Eg2 and the energy level band gap Eg3 of third sublayer are Eg1 < Eg2 < Eg3.
2. LED epitaxial slice according to claim 1, it is characterised in that: the difference of Eg3 and Eg2 is at least
1.5eV。
3. LED epitaxial slice according to claim 1, it is characterised in that: the third sublayer with a thickness of 30 angstroms
Below.
4. LED epitaxial slice according to claim 1-3, it is characterised in that: all weeks of multiple quantum wells
The each period stacking order of phase structure is the first sublayer, the second sublayer and third sublayer, wherein the energy level band of first sublayer
The relationship of the energy level band gap Eg3 of gap Eg1, the energy level band gap Eg2 of the second sublayer and third sublayer are Eg1 < Eg2 < Eg3.
5. LED epitaxial slice according to claim 1-3, it is characterised in that: the multiple quantum wells is extremely
In few a cycle structure, the first sublayer is further formed by least two semiconductor material stacks, at least two semiconductor materials
The stack manner of material is to move closer to the Eg of the second sublayer side from low to high and the Eg2 of below the second sublayer.
6. LED epitaxial slice according to claim 1-3, it is characterised in that: the multiple quantum wells is extremely
In few a cycle structure, the second sublayer is further formed by least two semiconductor material stacks, at least two semiconductor materials
The stack manner of material is to be gradually distance from the Eg of the first sublayer side from low to high.
7. LED epitaxial slice according to claim 1-3, it is characterised in that: the multiple quantum wells is extremely
In few a cycle structure, third sublayer is further formed by least two semiconductor material stacks, at least two semiconductor materials
The stack manner of material is the Eg2 for being gradually distance from the second sublayer side Eg from low to high and being all higher than the second sublayer.
8. LED epitaxial slice according to claim 1-3, it is characterised in that: the multiple quantum wells packet
At least one period and stacking order for including the first sublayer and the second sublayer stacking are the first sublayer, the second sublayer and third
Layer, wherein the energy level band gap Eg3 of the energy level band gap Eg2 of the energy level band gap Eg1 of first sublayer, the second sublayer and third sublayer
Relationship be at least two periodic structure of Eg1 < Eg2 < Eg3.
9. LED epitaxial slice according to claim 1, it is characterised in that: the light emitting diode is gallium nitride hair
Optical diode.
10. according to LED epitaxial slice as claimed in claim 9, it is characterised in that: the third sublayer is AlwGa1-
WN, 0.95≤w≤1.
11. LED epitaxial slice according to claim 1-3, it is characterised in that: the third sublayer is
AlN。
12. LED epitaxial slice according to claim 1-3, it is characterised in that: the third sublayer AlN
With a thickness of 10-15 angstroms.
13. any one of -3 LED epitaxial slice according to claim 1, it is characterised in that: the light emitting diode
Emission wavelength is 350-370nm.
14. 3 LED epitaxial slice according to claim 1, it is characterised in that: the energy level band gap of first sublayer
Eg1 is 3.3 ~ 3.5eV.
15. 3 LED epitaxial slice according to claim 1, it is characterised in that: the energy level band gap of second sublayer
Eg2 is 3.55 ~ 3.9eV.
16. according to LED epitaxial slice described in claim 13, it is characterised in that: the Eg2 and first of second sublayer
The energy level band gap difference of the Eg1 of sublayer is 0.25 ~ 0.30eV.
17. 3 LED epitaxial slice according to claim 1, it is characterised in that: the quantity of the periodic structure be 2 ~
20。
18. 3 LED epitaxial slice according to claim 1, it is characterised in that: first sublayer is InxGa1-
XN, 0≤x≤0.03.
19. 3 LED epitaxial slice according to claim 1, it is characterised in that: second sublayer is
InyAlzGa1-y-zN, 0≤y≤0.02,0.06≤z≤0.12.
20. 3 LED epitaxial slice according to claim 1, it is characterised in that: second sublayer is AlzGa1-
ZN, 0.06≤z≤0.12.
21. any one of -3 LED epitaxial slice according to claim 1, it is characterised in that: first sublayer, second
The thickness of sublayer and third sublayer is respectively 300 angstroms or less.
22. any one of -3 LED epitaxial slice according to claim 1, it is characterised in that: the thickness of first sublayer
Degree for 20 ~ 150 angstroms, the second sublayer with a thickness of 50 ~ 300 angstroms.
23. any one of -3 LED epitaxial slice according to claim 1, it is characterised in that: the total thickness of the Quantum Well
Degree is 100 ~ 3000 angstroms.
24. a kind of light emitting diode, it is characterised in that: the light emitting diode is -23 described in any item according to claim 1
LED epitaxial slice obtains.
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| CN110582857B (en) * | 2018-05-18 | 2023-08-15 | 厦门三安光电有限公司 | Light emitting diode |
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