CN208548348U - A kind of semiconductor power device of band detection and defencive function - Google Patents
A kind of semiconductor power device of band detection and defencive function Download PDFInfo
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- CN208548348U CN208548348U CN201821206889.9U CN201821206889U CN208548348U CN 208548348 U CN208548348 U CN 208548348U CN 201821206889 U CN201821206889 U CN 201821206889U CN 208548348 U CN208548348 U CN 208548348U
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Abstract
The utility model discloses a kind of semiconductor power devices of band detection and defencive function; including semiconductor power device ontology and integrated IC; semiconductor power device ontology and integrated IC are the chip of encapsulation, and semiconductor power device ontology and the integrated IC are integrated in the same module；The input terminal connection semiconductor power device ontology and its output end of the detection circuit are connected to the sampled signal input of logic control element, and the signal output end of logic control element is connected by driving unit with semiconductor power device ontology；The protection circuit connection is to driving unit.The semiconductor power device; in such a way that dual chip is integrated; there is the IC chip of detection and defencive function to be integrated on same plate body in the way of routing semiconductor power device ontology and set; its processing flow that can shorten semiconductor power device integrated circuit reduces cost; and the area of integrated circuit is reduced, improve the stability of integrated circuit.
Description
Technical field
The utility model relates to technical field of semiconductors, more specifically, it relates to a kind of detection of band and defencive function
Semiconductor power device.
Background technique
Currently, in power electronics field, semiconductor power device ontology, such as common MOSFET, IGBT,
GTO etc. is widely applied.However, since the characteristic of semiconductor material determines the resistance to electricity of semiconductor power device ontology
The performances such as pressure, resistance to electric current, heatproof are restricted.
So semiconductor power device ontology, generally requires and protects circuit for its detection for being equipped with periphery, in its work
It needs to check its voltage, electric current and temperature in the process, and the case where over-voltage, under-voltage, overcurrent or excess temperature occur at it
Under safeguard measure is taken to it, to guarantee the stability of its work and reliability, it be prevented to be damaged.
Existing semiconductor power device ontology, be all by power it is integrated i.e. by the technology of complexity by itself and its
The detection of periphery is protected inside circuit integration to integrated circuit, and powerful purpose, such integration mode processing flow are reached
It is long, at high cost, and arrange it is not compact enough cause entire integrated circuit area very big, and due to interfering with each other between component
So that ghost effect is complicated, the stability of integrated circuit is influenced.
Utility model content
In view of the deficienciess of the prior art, the purpose of this utility model is to provide a kind of detections of band and defencive function
The semiconductor power device of semiconductor power device, band detection and defencive function can shorten the integrated electricity of semiconductor power device
The processing flow on road reduces cost, and reduces the area of integrated circuit, improves the stability of integrated circuit.
To achieve the above object, the utility model provides following technical solution:
A kind of semiconductor power device of band detection and defencive function, including semiconductor power device ontology and integrated IC,
The semiconductor power device ontology and integrated IC are the chip of encapsulation, and the semiconductor power device ontology is integrated with described
IC is integrated in the same module；The integrated IC is integrated with detection circuit, driving unit, logic control element and protection electricity
Road；The input terminal of the detection circuit connects the semiconductor power device ontology and its output end is connected to logic control element
Sampled signal input, the signal output end of logic control element connected by driving unit and semiconductor power device ontology
It connects；The protection circuit connection is to driving unit.
Preferably, the semiconductor power device ontology is connect by the way of routing with the integrated IC.
Preferably, the detection circuit includes temperature sensing circuit, voltage detecting circuit and current detection circuit.
Preferably, the protection circuit includes thermal-shutdown circuit, overvoltage crowbar, under-voltage protecting circuit and overcurrent
Protect circuit.
Preferably, the semiconductor power device ontology is field-effect tube and freewheeling diode；The leakage of the field-effect tube
Pole connects working power, and the grid of the field-effect tube is connected with the output end of driving unit, and the source electrode of the field-effect tube is
Output end, the source electrode of the anode connection field-effect tube of the freewheeling diode, the cathode of the freewheeling diode connect field-effect
The drain electrode of pipe.
Preferably, the integrated IC further include be connected to it is anti-between the semiconductor power device ontology and working power
To protection circuit.
Preferably, the described and integrated IC further includes that circuit occurs for oscillating circuit and two-frequency signal；The two-frequency signal occurs
Circuit is connected by oscillating circuit with logic control element.
It preferably, further include capacitor charging unit and external capacitor；The external capacitor passes through capacitor charging unit and work
Make power supply connection.
Preferably, the semiconductor power device with detection and defencive function is patch type.
Compared with prior art, the utility model has the advantages that:
The semiconductor power device with detection with defencive function of the utility model will in such a way that dual chip is integrated
Semiconductor power device ontology and set have the IC chip of detection and defencive function to be integrated in same plate in the way of routing
On body.Since detection is fully integrated with protection circuit and is encapsulated in inside IC chip, and semiconductor power device ontology
Also it is packaged into chip, therefore the foot position of two chips is correspondingly connected with together, compared to traditional semiconductor power
Printing, patch type integration mode used by device body and periphery detection protection circuit, the patch type module can substantially contract
The processing flow of short semiconductor power device Ontology integration circuit reduces cost, and reduces the area of integrated circuit, additionally, due to
Component is packaged in inside chip, has prevented the phase of the component and semiconductor power device ontology in detection protection circuit
Mutually interference, improves the stability of integrated circuit.
Detailed description of the invention
Fig. 1 is the structural schematic diagram with detection with the semiconductor power device of defencive function；
Fig. 2 is the functional block diagram with detection with the semiconductor power device of defencive function.
Specific embodiment
Referring to Fig.1-2, a kind of semiconductor power device of band detection and defencive function, including semiconductor power device ontology
With integrated IC, the semiconductor power device ontology and integrated IC are the chip of encapsulation, the semiconductor power device ontology
It is integrated in the same module with the integrated IC；The integrated IC is integrated with detection circuit, driving unit, logic control element
With protection circuit；The input terminal of the detection circuit connects the semiconductor power device ontology and its output end is connected to logic
The signal output end of the sampled signal input of control unit, logic control element passes through driving unit and semiconductor power device
Ontology connection；The protection circuit connection is to driving unit.
In the present embodiment, semiconductor power device ontology is field-effect tube (MOSFET chip) and freewheeling diode.It is described
The drain electrode of field-effect tube connects working power VCC, and the grid of the field-effect tube is connected with the output end of driving unit, the field
The source electrode of effect pipe is output end OUT, the source electrode of the anode connection field-effect tube of the freewheeling diode, the freewheeling diode
Cathode connection field-effect tube drain electrode.
The present embodiment, detection circuit include temperature sensing circuit, voltage detecting circuit and current detection circuit, wherein temperature
Detection circuit includes the thermistor contacted with MOSFET chip, the output end connection logic control element of temperature sensing circuit
Sampled signal input, the temperature data of output are used to generate the logical signal of MOSFET excess temperature for logic control element；Electricity
Positive supply VCC, negative supply VEE(in the input terminal connection driving unit of pressure detection circuit are not shown in the figure), voltage detecting electricity
The sampled signal input of the output end connection logic control element on road, the generating positive and negative voltage data of acquisition are used for for logic control
The logical signal of unit generation MOSFET grid overvoltage/undervoltage；Current detection circuit input terminal connection MOSFET chip drain electrode and
Source electrode, for acquiring drain current and source current, the sampling letter of the output end connection logic control element of current detection circuit
Number input terminal, the drain current data and source current data of acquisition are used to generate MOSFET overcurrent for logic control element
Logical signal.
The present embodiment, protection circuit includes the thermal-shutdown circuit connecting with driving unit, overvoltage crowbar, under-voltage guarantor
Protection circuit and current foldback circuit.
Thermal-shutdown circuit is comparator, when sentencing for the temperature data that logic control element is detected according to temperature sensing circuit
It is disconnected go out MOSFET chip temperature it is excessively high when, logic control element sends an overheat protector signal to driving unit, and driving unit connects
Thermal-shutdown circuit is started to work after receiving the overheat protector signal, is issued a level signal to driving unit, is made to drive
Unit turns off MOSFET chip, prevents its temperature from continuing to increase.
What overvoltage crowbar and under-voltage protecting circuit were all made of is voltage regulator circuit.When logic control element is examined according to voltage
When the working power VCC for judging MOSFET chip of the generating positive and negative voltage data of slowdown monitoring circuit detection is fluctuated, logic control list
Member sends an overvoltage protection electric signal to driving unit or UVP signal, driving unit receive overvoltage protection electric signal
Perhaps corresponding overvoltage crowbar or under-voltage protecting circuit are started to work after UVP signal, make to be added on MOSFET
Working power VCC stablize in normal section, guarantee the normal work of MOSFET.
Current foldback circuit is using current limiter.When the drain electrode electricity that logic control element is detected according to current detection circuit
When flow data and the drain current and/or excessive source current for judging MOSFET chip of source current data, logic control
Unit sends an overcurrent protection signal to driving unit, and driving unit receives current foldback circuit after the overcurrent protection signal
Current limiter is started to work, and plays the role of limiting electric current, MOSFET is prevented to be burned out.
In the present embodiment, described and integrated IC further includes that circuit occurs for oscillating circuit and two-frequency signal；The two-frequency signal
Circuit occurs to connect by oscillating circuit with logic control element.Circuit occurs for oscillating circuit and two-frequency signal for generating logic
The operation clock of control unit.
It further include capacitor charging unit and external capacitor CEXT in the present embodiment；The external capacitor CEXT passes through capacitor
Charhing unit is connected with working power VCC.
In addition, integrated IC further includes the reversed guarantor being connected between semiconductor power device ontology and its working power VCC
Protection circuit.When the case where reverse power connection occurs in MOSFET, can be damaged to MOSFET, so, it is necessary to add in circuit
Enter reverse protection circuit, reaches the purpose that even if reversed power supply, will not be damaged.
In the present embodiment, the semiconductor power device with detection and defencive function is patch type.It is easy to use, it answers
It is wide with range.
The semiconductor power device of the band detection and defencive function, in such a way that dual chip is integrated, by semiconductor power
Device body and set have the IC chip of detection and defencive function to be integrated on same plate body in the way of routing.Due to inspection
It surveys and is fully integrated and is encapsulated in inside IC chip with protection circuit, and semiconductor power device ontology is also packaged into core
Piece, therefore the foot position of two chips is correspondingly connected with together, compared to traditional semiconductor power device ontology and outside
Printing, patch type integration mode used by detection protection circuit are enclosed, which can substantially shorten semiconductor power
The processing flow of device body integrated circuit reduces cost, and reduces the area of integrated circuit, is encapsulation additionally, due to component
Inside chip, the component and semiconductor power device ontology prevented in detection protection circuit is interfered with each other, raising
The stability of integrated circuit.
The above is only the preferred embodiment of the utility model, and the protection scope of the utility model is not limited merely to
Above-described embodiment, technical solution belonging to the idea of the present invention belong to the protection scope of the utility model.It should refer to
Out, for those skilled in the art, it is without departing from the principle of the utility model it is several improvement and
Retouching, these improvements and modifications also should be regarded as the protection scope of the utility model.
Claims (9)
1. the semiconductor power device of a kind of band detection and defencive function, it is characterized in that: include semiconductor power device ontology and
Integrated IC, the semiconductor power device ontology and integrated IC are the chip of encapsulation, the semiconductor power device ontology with
The integrated IC is integrated in the same module；
The integrated IC is integrated with detection circuit, driving unit, logic control element and protection circuit；The detection circuit it is defeated
Enter end and connect the sampled signal input that the semiconductor power device ontology and its output end are connected to logic control element, patrols
The signal output end for collecting control unit is connected by driving unit with semiconductor power device ontology；The protection circuit connection is extremely
Driving unit.
2. the semiconductor power device of band detection and defencive function according to claim 1, it is characterized in that: the semiconductor
Power device ontology is connect by the way of routing with the integrated IC.
3. the semiconductor power device of band detection and defencive function according to claim 2, it is characterized in that: the detection is electric
Road includes temperature sensing circuit, voltage detecting circuit and current detection circuit.
4. the semiconductor power device of band detection and defencive function according to claim 3, it is characterized in that: the protection is electric
Road includes thermal-shutdown circuit, overvoltage crowbar, under-voltage protecting circuit and current foldback circuit.
5. the semiconductor power device of band detection and defencive function according to claim 4, it is characterized in that: the semiconductor
Power device ontology is field-effect tube and freewheeling diode；
The drain electrode of the field-effect tube connects working power, and the grid of the field-effect tube is connected with the output end of driving unit,
The source electrode of the field-effect tube is output end, the source electrode of the anode connection field-effect tube of the freewheeling diode, the afterflow two
The drain electrode of the cathode connection field-effect tube of pole pipe.
6. the semiconductor power device of band detection and defencive function according to claim 5, it is characterized in that: the integrated IC
It further include the reverse protection circuit being connected between the semiconductor power device ontology and working power.
7. the semiconductor power device of band detection and defencive function according to claim 6, it is characterized in that: the integrated IC
It further include that circuit occurs for oscillating circuit and two-frequency signal；
The two-frequency signal occurs circuit and is connected by oscillating circuit with logic control element.
8. the semiconductor power device of band detection and defencive function according to claim 5, it is characterized in that: further including capacitor
Charhing unit and external capacitor；
The external capacitor is connected by capacitor charging unit with working power.
9. the semiconductor power device of band detection and defencive function according to any one of claims 1 to 8, it is characterized in that:
The semiconductor power device with detection and defencive function is patch type.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821206889.9U CN208548348U (en) | 2018-07-27 | 2018-07-27 | A kind of semiconductor power device of band detection and defencive function |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821206889.9U CN208548348U (en) | 2018-07-27 | 2018-07-27 | A kind of semiconductor power device of band detection and defencive function |
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| CN208548348U true CN208548348U (en) | 2019-02-26 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108962885A (en) * | 2018-07-27 | 2018-12-07 | 广州华微电子有限公司 | A kind of semiconductor power device of band detection and defencive function |
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2018
- 2018-07-27 CN CN201821206889.9U patent/CN208548348U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108962885A (en) * | 2018-07-27 | 2018-12-07 | 广州华微电子有限公司 | A kind of semiconductor power device of band detection and defencive function |
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