CN208477138U - A kind of narrow band filter and optical system - Google Patents
A kind of narrow band filter and optical system Download PDFInfo
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- CN208477138U CN208477138U CN201821191900.9U CN201821191900U CN208477138U CN 208477138 U CN208477138 U CN 208477138U CN 201821191900 U CN201821191900 U CN 201821191900U CN 208477138 U CN208477138 U CN 208477138U
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Abstract
The utility model discloses a kind of narrow band filter and optical system, which includes absorbing base, the optical filtering lamination absorbed below base is arranged in and the antireflection lamination absorbed above base being arranged in；The antireflection lamination is alternately stacked by titanium pentoxide layer and silicon dioxide layer to be constituted；The optical filtering lamination is alternately stacked by silicon dioxide layer and silicon layer to be constituted.The preferable filter effect to infrared band may be implemented in the utility model, so that light narrower bandwidth after filtering, and manufacturing process is relatively simple, and cost is relatively low, can be widely applied in various optical systems.
Description
Technical field
The utility model relates to optical device fields, more particularly to a kind of narrow band filter and optical system.
Background technique
Currently, emitting near infrared light to collected object using light source first, to adopt in typical image acquisition field
The light of collected object reflection is detected with imaging sensor to obtain acquisition image.Although light source at present on the market is general nominal
Central wavelength be all relatively common standard value, such as infrared diode, wavelength is in the majority with 850nm and 940nm, purchases on the market
The infrared LED nominal value bought all is 850nm or 940nm, but finds still have not when measuring specific LED product central wavelength
Few deviation, by taking the LED of 850nm as an example, practical central wavelength has 835nm, also there is 865nm's.When using plurality of LEDs battle array
Column constitute light source when, since the central wavelength of each LED is inconsistent, the spectrum of all LED after superimposing, comprehensive band
Width can broaden.The LED bandwidth of single 850nm is in 50nm or so, if multiple LED are superimposed since central wavelength is inconsistent
Spectral bandwidth will will become very wide.For the light source of other wavelength, there is also the same problems.Therefore need using optical filter come
The wavelength shift of light source is eliminated, traditional bandpass filter, although being also able to satisfy optical filtering demand, it needs more plated film
The number of plies, manufacturing process is complicated, higher cost, and filter effect is poor, leads to the broader bandwidth of light after filtering.
Utility model content
In order to solve the above technical problems, the purpose of the utility model is to provide a kind of narrow band filter and optical systems
System.
The technical scheme adopted by the utility model to solve the technical problem is as follows:
A kind of narrow band filter is being inhaled including absorbing base, the optical filtering lamination absorbed below base being arranged in and is arranged
Receive the antireflection lamination above base；
The antireflection lamination is alternately stacked by titanium pentoxide layer and silicon dioxide layer to be constituted；
The optical filtering lamination is alternately stacked by silicon dioxide layer and silicon layer to be constituted.
Further, it is described absorb base by glass baseplate and coated in glass substrate surface for absorb visible light and
The absorbed layer of part infrared light is constituted.
Further, the absorbed layer with a thickness of 1~10um.
Further, in the antireflection lamination, total number of plies of titanium pentoxide layer and silicon dioxide layer is 4~10 layers.
Further, in the antireflection lamination, the thickness in monolayer of each titanium pentoxide layer is 30~200nm, each two
The thickness in monolayer of silicon oxide layer is 30~250nm.
Further, in the optical filtering lamination, total number of plies of silicon dioxide layer and silicon layer is 36~44 layers.
Further, in the optical filtering lamination, in the optical filtering lamination, the thickness in monolayer of each silicon dioxide layer is 80~
300nm, the thickness in monolayer of each silicon layer are 20~80nm.
The utility model solve used by its technical problem another solution is that
A kind of optical system, using the narrow band filter.
The beneficial effects of the utility model are: the utility model is alternately stacked composition by using silicon dioxide layer and silicon layer
Optical filtering lamination is alternately stacked after constituting antireflection lamination, from top to bottom by filtering using titanium pentoxide layer and silicon dioxide layer
Lamination, absorption base and antireflection lamination successively constitute narrow band filter, and the preferable optical filtering to infrared band may be implemented
Effect, so that light narrower bandwidth after filtering, and manufacturing process is relatively simple, and cost is relatively low.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the first embodiment of the narrow band filter of the utility model；
Fig. 2 is the structural schematic diagram of the second embodiment of the narrow band filter of the utility model；
Fig. 3 is the coverage diagram figure when antireflection lamination of the utility model uses 4 layers and 10 layers；
Fig. 4 is the transmitted light spectrogram of traditional optical filter；
Fig. 5 is the transmitted light spectrogram of the narrow band filter of the utility model.
Specific embodiment
Referring to Fig.1, the utility model provides a kind of narrow band filter, including absorbs base 2, setting in absorption base 2
The optical filtering lamination 1 of lower section and the antireflection lamination 3 that 2 top of absorption base is set；
The antireflection lamination 3 is alternately stacked by titanium pentoxide layer and silicon dioxide layer to be constituted；First layer is five oxidations
Three titanium layers, the second layer are silicon dioxide layer, and third layer is titanium pentoxide layer, and the 4th layer is silicon dioxide layer ..., are successively handed over
For stacking, the last layer is silicon dioxide layer；
The optical filtering lamination 1 is alternately stacked by silicon dioxide layer and silicon layer to be constituted；First layer is silicon dioxide layer, the second layer
For silicon layer, third layer is silicon dioxide layer, and the 4th layer is silicon layer ..., is successively alternately stacked, the last layer is silicon layer.
It is folded to be alternately stacked composition optical filtering by using silicon dioxide layer and silicon layer for the narrow-band-filter chip architecture of the utility model
Layer 1 is alternately stacked after constituting antireflection lamination 3, from top to bottom by optical filtering lamination using titanium pentoxide layer and silicon dioxide layer
1, it absorbs base 2 and antireflection lamination 3 successively constitutes narrow band filter, the preferable optical filtering effect to infrared band may be implemented
Fruit, so that light narrower bandwidth after filtering, and manufacturing process is relatively simple, and cost is relatively low.
It is further used as preferred embodiment, referring to shown in Fig. 2, the absorption base 2 is by glass baseplate 21 and applies
The absorbed layer 22 for absorbing visible light and part infrared light for overlaying on 21 surface of glass baseplate is constituted.Specifically, absorbed layer 22
Glass baseplate 21 is spun and coated at using the pigment for absorbing visible light and part infrared light to obtain.In the present embodiment, narrowband
The cutoff range of optical filter is 400~1100nm, mainly absorbs visible light and 1100nm wavelength infrared light below.
Be further used as preferred embodiment, the absorbed layer 22 with a thickness of 1~10um.
It is further used as preferred embodiment, in the antireflection lamination 3, titanium pentoxide layer and silicon dioxide layer
Total number of plies is 4~10 layers.It is constituted since antireflection lamination 3 is alternately stacked by titanium pentoxide layer and silicon dioxide layer, first layer
For titanium pentoxide layer, the last layer is silicon dioxide layer, then total number of plies of titanium pentoxide layer and silicon dioxide layer has here
Body is 4,6,8 or 10 layers.
When total number of plies of antireflection lamination 3 is respectively 4 layers and 10 layers, reflectance spectrum is as shown in figure 3, reflection characteristic compares number
According to as shown in table 1 below:
Table 1
By Fig. 3 and table 1 it is found that the antireflection lamination 3 of the utility model have to the infrared light of 750~950nm wave band it is good
Good transmission effect, may be implemented the preferable anti-reflection effect to infrared light.And the total number of plies is higher has better antireflective effect,
This programme from cost consideration, select 4~10 layers as optimum number of strata.
It is further used as preferred embodiment, in the antireflection lamination 3, the thickness in monolayer of each titanium pentoxide layer
For 30~200nm, the thickness in monolayer of each silicon dioxide layer is 30~250nm.When the thickness in monolayer of titanium pentoxide layer is 30
In~200nm, when the thickness in monolayer of silicon dioxide layer is in 30~250nm, antireflection lamination 3 can keep preferable anti-reflection effect
Fruit, performance are similar to Fig. 3 and table 1.Thickness is thicker, and the transmission effect for increasing infrared light is better, can during concrete application
To select the thickness requirement of optical filter suitable titanium pentoxide layer and silicon dioxide layer according to applied optical system
Thickness.
It is further used as preferred embodiment, in the optical filtering lamination 1, total number of plies of silicon dioxide layer and silicon layer is 36
~44 layers.Similar, because optical filtering lamination 1 is to be alternately stacked to constitute by silicon dioxide layer and silicon layer, first layer is silica
Layer, the last layer is silicon layer, so silicon dioxide layer and total number of plies of silicon layer are 36,38,40,42 or 44 layers here.
When total number of plies of optical filtering lamination 1 is respectively 36 layers and 44 layers, transmissison characteristic contrasting data is as shown in table 2 below:
Table 2
It can be seen that the optical filtering lamination 1 of the utility model has good absorption to the infrared light of 750~780nm wave band
The preferable filter effect to infrared light may be implemented in filter effect.And always the number of plies is higher with better filter effect, we
Case from cost consideration, select 36~44 layers as optimum number of strata.
It is further used as preferred embodiment, in the optical filtering lamination 1, in the optical filtering lamination, each silica
The thickness in monolayer of layer is 80~300nm, and the thickness in monolayer of each silicon layer is 20~80nm.It can be according to applied optical system
Thickness requirement to optical filter and the thickness required to select suitable silicon dioxide layer and silicon layer that filters.
Fig. 4 illustrates traditional optical filter 00Transmission spectrum under incidence angle and transmitted spectrum under 30 of incidence, figure
5 illustrate the optical filter of the utility model 00Transmission spectrum under incidence angle and transmitted spectrum under 30 of incidence.By Fig. 4
Comparison with Fig. 5 can get the utility model narrow band filter and traditional narrow band filter light-filtering characteristic correlation data such as
Shown in the following table 3:
Table 3
In table 3, OD is the abbreviation of optical density, indicates optical density, the specific light for indicating detected material and sponging
Density is the proper noun occurred in optical detection, refers to that visible light passes through detected material, the energy of front and back under normal circumstances
Difference.At a particular wavelength, the concentration of same detected material and absorbed energy are at quantitative relationship.Detect unit OD value
It indicates, OD=lg (1/trans), wherein trans is the light transmission value of detectable substance.
Therefore, the characteristic of bandwidth, angle offset, optical density of the utility model narrow band filter etc. is all substantially better than
Traditional narrow band filter.
Good filter effect is realized correspondingly, can also correspond to using the optical system of above-mentioned narrow band filter.
It is to be illustrated to the preferable implementation of the utility model, but the invention is not limited to the reality above
Example is applied, those skilled in the art can also make various equivalent variations without departing from the spirit of the present invention
Or replacement, these equivalent variation or replacement are all included in the scope defined by the claims of the present application.
Claims (8)
1. a kind of narrow band filter, which is characterized in that including absorb base, be arranged in absorb base below optical filtering lamination and
The antireflection lamination absorbed above base is set；
The antireflection lamination is alternately stacked by titanium pentoxide layer and silicon dioxide layer to be constituted；
The optical filtering lamination is alternately stacked by silicon dioxide layer and silicon layer to be constituted.
2. a kind of narrow band filter according to claim 1, which is characterized in that the absorption base by glass baseplate and
The absorbed layer for absorbing visible light and part infrared light coated in glass substrate surface is constituted.
3. a kind of narrow band filter according to claim 2, which is characterized in that the absorbed layer with a thickness of 1~10um.
4. a kind of narrow band filter according to claim 1, which is characterized in that in the antireflection lamination, five oxidations three
Total number of plies of titanium layer and silicon dioxide layer is 4~10 layers.
5. a kind of narrow band filter according to claim 1, which is characterized in that in the antireflection lamination, each five oxygen
The thickness in monolayer for changing three titanium layers is 30~200nm, and the thickness in monolayer of each silicon dioxide layer is 30~250nm.
6. a kind of narrow band filter according to claim 1, which is characterized in that in the optical filtering lamination, silicon dioxide layer
Total number of plies with silicon layer is 36~44 layers.
7. a kind of narrow band filter according to claim 1, which is characterized in that in the optical filtering lamination, each titanium dioxide
The thickness in monolayer of silicon layer is 80~300nm, and the thickness in monolayer of each silicon layer is 20~80nm.
8. a kind of optical system, which is characterized in that apply the described in any item narrow band filters of claim 1-7.
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| CN201821191900.9U CN208477138U (en) | 2018-07-25 | 2018-07-25 | A kind of narrow band filter and optical system |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111066032A (en) * | 2019-09-27 | 2020-04-24 | 深圳市汇顶科技股份有限公司 | Optical filter, fingerprint detection device and electronic equipment |
| CN111562641A (en) * | 2020-05-25 | 2020-08-21 | 南京邮电大学 | Night vision compatible infrared filter and preparation method thereof |
| CN114199527A (en) * | 2021-12-22 | 2022-03-18 | 长沙麓邦光电科技有限公司 | OD value detection method and system of graded filter and storage medium |
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2018
- 2018-07-25 CN CN201821191900.9U patent/CN208477138U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111066032A (en) * | 2019-09-27 | 2020-04-24 | 深圳市汇顶科技股份有限公司 | Optical filter, fingerprint detection device and electronic equipment |
| WO2021056425A1 (en) * | 2019-09-27 | 2021-04-01 | 深圳市汇顶科技股份有限公司 | Optical filter, fingerprint detection apparatus and electronic device |
| CN111066032B (en) * | 2019-09-27 | 2022-07-12 | 深圳市汇顶科技股份有限公司 | Optical filter, fingerprint detection device and electronic equipment |
| CN111562641A (en) * | 2020-05-25 | 2020-08-21 | 南京邮电大学 | Night vision compatible infrared filter and preparation method thereof |
| CN114199527A (en) * | 2021-12-22 | 2022-03-18 | 长沙麓邦光电科技有限公司 | OD value detection method and system of graded filter and storage medium |
| CN114199527B (en) * | 2021-12-22 | 2023-11-17 | 长沙麓邦光电科技有限公司 | OD value detection method, system and storage medium of graded optical filter |
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