CN208315549U - Light emitting device - Google Patents
Light emitting device Download PDFInfo
- Publication number
- CN208315549U CN208315549U CN201820317108.7U CN201820317108U CN208315549U CN 208315549 U CN208315549 U CN 208315549U CN 201820317108 U CN201820317108 U CN 201820317108U CN 208315549 U CN208315549 U CN 208315549U
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- Prior art keywords
- pixel
- fluorescence
- led chip
- light emitting
- emitting device
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- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000000203 mixture Substances 0.000 claims abstract description 6
- 239000000843 powder Substances 0.000 claims description 70
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 57
- 230000004888 barrier function Effects 0.000 claims description 13
- 229910002114 biscuit porcelain Inorganic materials 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000003491 array Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004134 energy conservation Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 238000012958 reprocessing Methods 0.000 description 2
- 239000004568 cement Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000035922 thirst Effects 0.000 description 1
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Abstract
The utility model relates to display field, in particular to a kind of light emitting device that can be applied in display device.The light emitting device includes multiple chip array modules, the multiple chip array module splicing one plane of composition or curved surface, each chip array module includes at least one pixel mould group, each pixel mould group includes multiple led chips, the led chip includes substrate, multiple led chip common substrates in same pixel mould group.The light emitting device of the utility model has the advantages that structure is simple.
Description
[technical field]
The utility model relates to display field, in particular to a kind of light emitting device that can be applied in display device.
[background technique]
With the development of technology with the raising of people's demand, people increasingly thirst for the high display device of display performance.It is existing
In some display devices, led display device performance is brilliant, is able to satisfy most of Man's Demands.And led display device display precision
The led chip that the light emitting device of Gao Shi, led display device needs is more, to show dress in the high led of production display precision
It sets, manufacturing speed is more slow.
Therefore, a kind of simple light emitting device of structure how is provided, just at the demand of display field!
[utility model content]
To overcome the production slow-footed technical problem of led display device with high accuracy, the utility model provides a kind of hair
Electro-optical device.
The scheme that the utility model solves technical problem is to provide a kind of light emitting device, is used as display device
A part, the light emitting device include multiple chip array modules, the multiple chip array module splicing one plane of composition or song
Face, each chip array module include at least one pixel mould group, and each pixel mould group includes multiple led chips, the led core
Piece includes substrate, multiple led chip common substrates in same pixel mould group.
Preferably, the pixel mould group includes a R pixel, a G pixel and a B pixel;Or the pixel mould group includes one
R pixel, a G pixel, a B pixel one or two W pixel;R pixel, G pixel, B pixel are in a column arrangement, the arrangement of L shape or product
Font arrangement, R pixel, G pixel, B pixel, W pixel are in a column or square arrangement.
Preferably, each chip array module includes multiple pixel mould groups, two adjacent led cores in each pixel mould group
The distance between piece is less than or equal to the distance between two led chips adjacent in 1.5mm or adjacent pixel mould group and is less than etc.
In 1.5mm.
Preferably, the size of the led chip is less than or equal to 1mm.
Preferably, the led chip is blue light led chip.
Preferably, the light emitting device further includes phosphor powder layer, and the phosphor powder layer is coated on led chip, described glimmering
Light bisque includes R phosphor powder layer, G phosphor powder layer, B phosphor powder layer, at least two in W phosphor powder layer, each pixel mould
Phosphor powder layer in group includes R phosphor powder layer, G phosphor powder layer, B phosphor powder layer, at least two in W phosphor powder layer fluorescent powder;
The led chip of each pixel mould group generates feux rouges, blue light and green light by fluorescent powder, or generate feux rouges, blue and green light and
White light.
Preferably, the light emitting device further includes fluorescence diaphragm, and the fluorescence diaphragm is arranged above led chip, described
Fluorescence diaphragm includes multiple fluorescence grid, and the fluorescence grid includes R fluorescence grid, G fluorescence grid, B fluorescence grid, W glimmering
At least two in raster grid, the position of the fluorescence grid and the position of led chip correspond, each pixel mould
The corresponding fluorescence grid of group includes R fluorescence grid, G fluorescence grid, B fluorescence grid, at least two in W fluorescence grid;It is described
The led chip of each pixel mould group generates feux rouges, blue light and green light by fluorescence grid, or generates feux rouges, blue and green light and white
Light.
Preferably, the thickness of the fluorescence diaphragm is less than or equal to 1.5mm.
Preferably, each led chip includes independent positive terminal pad, negative terminal pad, the anode weldering of the led chip
Disk, negative terminal pad are used to realize and be electrically connected that described the external circuit board can be controlled separately chip array module with the external circuit board
In each led chip light emitting.
Preferably, the fluorescence diaphragm further includes barrier layer, and the barrier layer is arranged between fluorescence grid.
Compared with prior art, the light emitting device of the utility model includes multiple chip array modules, the multiple chip
Array module splicing one plane of composition or curved surface, each chip array module include at least one pixel mould group, described every
A pixel mould group includes multiple led chips, and the led chip includes substrate, the multiple led chip common substrate, chip array
It does not need to cut after the completion of module making, structure is simple, the light emitting device of various sizes can be combined by splicing, for not
With the display device of size, manufacturing speed is fast, and the structure of obturator chip arrays module can greatly improve the efficiency and core of die bond
The spacing of chip convenient for reprocessing, and can be reduced to minimum, be particularly suitable for the production of the high pixel request of small spacing by the thrust of piece
Product remove a chip array module in a led wafer damage.
When the pixel mould group of the utility model includes R pixel, G pixel, B pixel, W pixel, light emitting device energy conservation meets
Environmentally protective demand.
Each led chip of the utility model includes independent positive terminal pad, negative terminal pad, the anode of the led chip
Pad, negative terminal pad are used to realize and be electrically connected that described the external circuit board can be controlled separately chip array mould with the external circuit board
Each led chip light emitting in block realizes the perfect control of light emitting device.
[Detailed description of the invention]
Fig. 1 is the structural schematic diagram of the light emitting device of the utility model.
Fig. 2 is the enlarged structure schematic diagram of chip array module in Fig. 1.
Fig. 3 is the structural schematic diagram of fluorescent moieties in the utility model.
Fig. 4 is a kind of schematic diagram of deformation of fluorescence diaphragm structure in the utility model.
Description of symbols: 1, light emitting device;10, chip array module;11, pixel mould group;111, led chip;112,
Substrate;20, fluorescence diaphragm;21, fluorescence grid;22, barrier layer.
[specific embodiment]
In order to make the purpose of this utility model, technical solution and advantage are more clearly understood, below in conjunction with attached drawing and implementation
Example, the present invention will be further described in detail.It should be appreciated that specific embodiment described herein is only used to solve
The utility model is released, is not used to limit the utility model.
Referring to Fig. 1, the utility model provides a kind of light emitting device 1, it is used as a part of display device, it should
Light emitting device 1 includes multiple chip array modules 10, the multiple splicing of chip array module 10 one planes of composition or curved surface.Due to whole
A light emitting device 1 is that multiple chip array modules 10 are spliced, and improves manufacturing speed when making the light emitting device 1 of large area.
In the utility model, multiple meanings are at least two.
Referring to Fig. 2, each chip array module 10 includes at least one pixel mould group 11.Chip array module 10 includes
Pixel mould group 11 quantity without limitation, can according to need setting.A R is included with each pixel mould group 11 in the present embodiment
It is illustrated for pixel, a G pixel, a B pixel and a W pixel, each pixel mould group 11 can issue feux rouges, green at this time
Light, blue light and white light.One R pixel, a G pixel, a B pixel and a square arrangement of W pixel.As a kind of selection, W picture
Element can be two, i.e., each pixel mould group 11 include a R pixel, a G pixel, a B pixel and two W pixels, a R pixel,
One G pixel, a B pixel and two W pixels can be in a column arrangements.R pixel, G pixel, the B pixel that each pixel mould group 11 includes
Without limitation with the shape of W pixel arrangement.As a kind of deformation, each pixel mould group 11 includes a R pixel, a G pixel and a B
Pixel, each pixel mould group 11 can issue feux rouges, green light and blue light at this time, and a R pixel, a G pixel and a B pixel can be in a column
Arrangement, the arrangement of L shape or isosceles triangle arrangement.The shape of R pixel, G pixel and B pixel arrangement that each pixel mould group 11 includes is not
It limits.
Please continue to refer to Fig. 2, specifically, each pixel mould group 11 includes multiple led chips 111 and phosphor powder layer
(not shown), the led chip 111 include substrate 112, all 111 common substrates of led chip in same pixel mould group 11
112.Phosphor powder layer is coated on led chip 111.Phosphor powder layer makes pixel mould group 11 issue different coloured light.
The size of led chip 111 be less than or equal to 0.01mm, 0.015mm, 0.05mm, 0.1mm, 0.127mm, 0.2mm,
0.34mm, 0.51mm, 0.6mm, 0.9mm, 0.97mm or 1mm.Led chip 111 is preferably blue light led chip, blue light led core
Piece issues blue light.Preferably, each pixel mould group 11 includes at least three led chips 111, further preferably three, four
A or 5 led chips 111, the distance between two adjacent led chips 111 (pitch) D1 be less than or equal to 1.5mm, 1mm,
0.8mm, 0.5mm, 0.3mm, 0.1mm or 0.05mm.Between the two adjacent led chips 111 in different pixels mould group 11
Distance (pitch) D2 be less than or equal to 1.5mm, 1mm, 0.8mm, 0.5mm, 0.3mm, 0.1mm or 0.05mm.Preferably, appoint
The distance between two led chips of anticipating are equal.It is appreciated that the distance between any two led chip 111 can also have error, no
The precision for influencing light emitting device 1, if error is ± 0.1mm.The led chip 111 at 10 edge of chip array module is away from the core
The distance at 10 edge of chip arrays module distance between two adjacent led chips 111
Each led chip 111 includes independent positive terminal pad, negative terminal pad, and the positive terminal pad of the led chip 111 is born
Pole pad is used to realize and be electrically connected that described the external circuit board can be controlled separately in chip array module 10 with the external circuit board
Each led chip 111 shines.Such as in a pixel mould group 11, need the pixel mould group 11 generate feux rouges when and R fluorescence grid
The corresponding led chip of lattice or led chip coated with R fluorescent powder are supplied by the external circuit board by positive terminal pad, negative terminal pad
Electricity, the light that led chip issues generate feux rouges by R fluorescent powder or R fluorescence grid.Need to generate its allochromatic colour in pixel mould group 11
Light time, corresponding led chip are powered by circuit board.It is appreciated that the external circuit board individually controls chip array module 10
In each led chip 111 when shining, led chip 111 can be controlled by peripheral control unit and shone.
Phosphor powder layer includes R phosphor powder layer (red light fluorescent powder layer), G phosphor powder layer (green-emitting fluorescent bisque), B phosphor powder layer
At least two in (blue light emitting phosphor layer), W phosphor powder layer (white fluorescence bisque), the fluorescent powder in each pixel mould group 11
Layer includes at least two in R phosphor powder layer, G phosphor powder layer, B phosphor powder layer, W phosphor powder layer.Preferably, same pixel mould group
Phosphor powder layer on 11 led chip 111 is made of one piece, and further preferably it is a prefabricated diaphragm.Led chip 111 is logical
It crosses R phosphor powder layer and generates feux rouges, green light is generated by G phosphor powder layer, blue light is generated by B phosphor powder layer, passes through W phosphor powder layer
Generate white light.The led chip 111 of each pixel mould group 11 generates feux rouges, blue light and green light by phosphor powder layer;Or it is every
The led chip 111 of a pixel mould group 11 generates feux rouges, blue and green light and white light by phosphor powder layer.Specifically, such as led chip
111 be blue light led chip 111, if single pixel mould group 11 is enable to issue feux rouges, green light and blue light, each pixel mould group 11
Including three blue light led chips 111, R phosphor powder layer is coated on one of led chip 111, on another led chip 111
G phosphor powder layer is coated, phosphor powder layer can be not coated by a remaining led chip 111.If led chip 111 is blue light led core
Piece 111, if single pixel mould group 11 is enable to issue feux rouges, green light, blue light and white light, each pixel mould group 11 includes four indigo plants
Light led chip 111 or five blue light led chips 111 coat R phosphor powder layer, another led on one of led chip 111
G phosphor powder layer is coated on chip 111, coats W phosphor powder layer, a remaining led core on another or two led chips 111
Phosphor powder layer is not coated by piece 111.It is appreciated that R phosphor powder layer, G phosphor powder layer, B phosphor powder layer, W phosphor powder layer can also
To select the quantum dot substitution that can issue corresponding color.
Referring to Fig. 3, phosphor powder layer can not be used as a kind of deformation, phosphor powder layer is substituted with fluorescence diaphragm 20.It is glimmering
Light diaphragm 20 be arranged above led chip 111, fluorescence diaphragm 20 can be close to led chip or between led chip 111 away from
From in 0-5mm.Fluorescence diaphragm 20 includes multiple fluorescence grids 21, and each fluorescence grid 21 is a fluorescence area, each fluorescence grid
Lattice 21 are converted to other coloured light the coloured light of needs.Specifically, fluorescence grid 21 include R, G, B, W fluorescence grid 21 in extremely
It is two kinds few, when fluorescence diaphragm 20 is placed on led chip 111, the position of fluorescence grid 21 and the position of led chip 111
It corresponds, an all corresponding fluorescence grid 21 on every led chip 111.The size of fluorescence grid 21 is both greater than led chip 111
Size, the edges of two adjacent fluorescence grids 21 covers the size between led chip 111.Each pixel mould group 11 is corresponding
Fluorescence grid 21 include R fluorescence grid (feux rouges fluorescence grid), G fluorescence grid (green-emitting fluorescent grid), B fluorescence grid
At least two in (blue phosphor grid) and W fluorescence grid (white fluorescence grid).Led chip 111 passes through R fluorescence grid 21
Feux rouges is generated, blue light is generated by G fluorescence grid, green light is generated by B fluorescence grid, white light is generated by W fluorescence grid.Institute
The led chip 111 for stating each pixel mould group 11 generates feux rouges, blue light and green light by fluorescence grid 21;Or each pixel
The led chip 111 of mould group 11 generates feux rouges, blue and green light and white light by fluorescence grid 21.In the present embodiment Fig. 3, each picture
Plain mould group 11 includes the led chip 111 of four square arrangements, and every led chip 111 is right respectively in four led chips 111
Answer a R fluorescence grid, G fluorescence grid, B fluorescence grid and W fluorescence grid.It is appreciated that fluorescence diaphragm 20 is described prefabricated
Diaphragm.It is appreciated that the size of fluorescence diaphragm 20 can be matched with the size of a pixel mould group 11, it can also be with a chip array mould
The size of block 10 matches.It is appreciated that fluorescence diaphragm thickness be less than or equal to 1.5mm, can be 0.02mm, 0.05mm,
0.1mm, 0.2mm, 0.5mm, 0.6mm, 0.8mm, 1mm, 1.3mm or 1.5mm, so that the light for issuing led chip 111 exists
The light path propagated on 20 thickness direction of fluorescence diaphragm is shorter, prevents light and scattering occurs in fluorescence diaphragm 20 to influence
The illumination effect of light emitting device 1.
In other embodiments, if led chip 111 is blue light led chip 111, if it is red so that single pixel mould group 11 is issued
Light, green light and blue light, then each pixel mould group 11 includes three blue light led chips 111, is R on one of led chip 111
Fluorescence grid 21 is G fluorescence grid 21 on another led chip 111, is B fluorescence grid on a remaining led chip 111
21.It is appreciated that B fluorescence grid 21 may be transparent fluorescence grid 21 at this time, the color of light will not be converted.Such as led
Chip 111 is blue light led chip 111, if single pixel mould group 11 is enable to issue feux rouges, green light, blue light and white light, each picture
Plain mould group 11 includes four blue light led chips 111 or five blue light led chips 111, is R on one of led chip 111
Fluorescence grid 21 is G fluorescence grid 21 on another led chip 111, is W fluorescent powder on another or two led chips 111
Layer, it is B fluorescence grid 21 or transparent fluorescence grid 21 on a remaining led chip 111.
Referring to Fig. 4, preferably, fluorescence diaphragm 20 further includes barrier layer 22, the setting of barrier layer 22 fluorescence grid 21 it
Between, barrier layer 22 is such as metal material, nonmetallic high reflecting material, height that can obstruct made of the material of light propagation
Light-proof material etc. is spent, barrier layer 22 prevents adjacent cells from light mixing occur.Barrier layer 22 correspond to adjacent two led chip 111 it
Between adjoining position.
The component of fluorescence diaphragm 20 includes fluorescent powder and optical cement, and Optical transparent adhesive and fluorescent powder mixing form fluorescent film
Piece 20.Optical transparent adhesive is preferably OCA (Optically CleaR Adhesive) Optical transparent adhesive.In different fluorescence grid
The fluorescent powder that 21 position of lattice uses is different.Fluorescent powder is not added at transparent fluorescence grid 21.As a kind of selection, fluorescent film
Piece 20 further includes transparent substrate, is arranged on the transparent substrate after Optical transparent adhesive and fluorescent powder mixing.Include in fluorescence diaphragm 20
When barrier layer 22, set barrier layer on the transparent substrate, Optical transparent adhesive and fluorescent powder mixing after be filled in barrier layer it
Between form fluorescence diaphragm.It is appreciated that fluorescent powder can be substituted using corresponding quantum dot.
Compared with prior art, the light emitting device of the utility model includes multiple chip array modules, the multiple chip
Array module splicing one plane of composition or curved surface, each chip array module include at least one pixel mould group, described every
A pixel mould group includes multiple led chips, and the led chip includes substrate, the multiple led chip common substrate, chip array
It does not need to cut after the completion of module making, structure is simple, the light emitting device of various sizes can be combined by splicing, for not
With the display device of size, manufacturing speed is fast, and the structure of obturator chip arrays module can greatly improve the efficiency and core of die bond
The spacing of chip convenient for reprocessing, and can be reduced to minimum, be particularly suitable for the production of the high pixel request of small spacing by the thrust of piece
Product remove a chip array module in a led wafer damage.
When the pixel mould group of the utility model includes R pixel, G pixel, B pixel, W pixel, light emitting device energy conservation meets
Environmentally protective demand.
Each led chip of the utility model includes independent positive terminal pad, negative terminal pad, the anode of the led chip
Pad, negative terminal pad are used to realize and be electrically connected that described the external circuit board can be controlled separately chip array mould with the external circuit board
Each led chip light emitting in block realizes the perfect control of light emitting device.
The above is only the preferred embodiment of the utility model only, is not intended to limit the utility model, all at this
Made any modification within the principle of utility model, equivalent replacement and improvement etc. should all include the protection scope of the utility model
Within.
Claims (10)
1. a kind of light emitting device is used as a part of display device, it is characterised in that: the light emitting device includes multiple
Chip array module, the multiple chip array module splicing one plane of composition or curved surface, each chip array module include extremely
A few pixel mould group, each pixel mould group includes multiple led chips, and the led chip includes substrate, in same pixel mould group
Multiple led chip common substrates.
2. light emitting device as described in claim 1, it is characterised in that: the pixel mould group include a R pixel, a G pixel and
One B pixel;Or the pixel mould group includes a R pixel, a G pixel, a B pixel one or two W pixel;R pixel, G pixel,
B pixel is in a column arrangement, the arrangement of L shape or isosceles triangle arrangement, and R pixel, G pixel, B pixel, W pixel are in a column or square row
Column.
3. light emitting device as described in claim 1, it is characterised in that: each chip array module includes multiple pixel mould groups,
The distance between two adjacent led chips are less than or equal to adjacent in 1.5mm or adjacent pixel mould group in each pixel mould group
The distance between two led chips be less than or equal to 1.5mm.
4. light emitting device as claimed in claim 3, it is characterised in that: the size of the led chip is less than or equal to 1mm.
5. light emitting device as described in claim 1, it is characterised in that: the led chip is blue light led chip.
6. light emitting device as described in claim 1, it is characterised in that: the light emitting device further includes phosphor powder layer, described glimmering
Light bisque is coated on led chip, and the phosphor powder layer includes R phosphor powder layer, G phosphor powder layer, B phosphor powder layer, W phosphor powder layer
In at least two, the phosphor powder layer in each pixel mould group includes R phosphor powder layer, G phosphor powder layer, B phosphor powder layer, W
At least two in phosphor powder layer fluorescent powder;The led chip of each pixel mould group generates feux rouges, blue light by phosphor powder layer
And green light, or generate feux rouges, blue and green light and white light.
7. light emitting device as described in claim 1, it is characterised in that: the light emitting device further includes fluorescence diaphragm, described glimmering
Light diaphragm is arranged above led chip, and the fluorescence diaphragm includes multiple fluorescence grid, and the fluorescence grid includes R fluorescence
Grid, G fluorescence grid, B fluorescence grid, at least two in W fluorescence grid, the position of the fluorescence grid and led chip
Position corresponds, the corresponding fluorescence grid of each pixel mould group include R fluorescence grid, G fluorescence grid, B fluorescence grid,
At least two in W fluorescence grid;The led chip of each pixel mould group generates feux rouges, blue light and green by fluorescence grid
Light, or generate feux rouges, blue and green light and white light.
8. light emitting device as claimed in claim 7, it is characterised in that: the thickness of the fluorescence diaphragm is less than or equal to 1.5mm.
9. light emitting device as described in claim 1, it is characterised in that: the led chip all includes independent positive terminal pad, bears
Pole pad, positive terminal pad, the negative terminal pad of the led chip, which are used to realize with the external circuit board, to be electrically connected, the external electrical
Road plate can be controlled separately each led chip light emitting in chip array module.
10. light emitting device as claimed in claim 7, it is characterised in that: the fluorescence diaphragm further includes barrier layer, the barrier
Layer is arranged between fluorescence grid.
Priority Applications (1)
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CN201820317108.7U CN208315549U (en) | 2018-03-07 | 2018-03-07 | Light emitting device |
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CN201820317108.7U CN208315549U (en) | 2018-03-07 | 2018-03-07 | Light emitting device |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110570798A (en) * | 2019-07-22 | 2019-12-13 | 深圳市艾比森光电股份有限公司 | Color display panel and control method thereof |
TWI685098B (en) * | 2019-02-01 | 2020-02-11 | 同泰電子科技股份有限公司 | Spliced led circuit board |
CN112530926A (en) * | 2020-08-24 | 2021-03-19 | 錼创显示科技股份有限公司 | Splicing type micro light-emitting diode display panel |
CN112599025A (en) * | 2019-10-02 | 2021-04-02 | 北京易美新创科技有限公司 | Small-sized screen structure and manufacturing method thereof |
US11887842B2 (en) | 2020-08-24 | 2024-01-30 | PlayNitride Display Co., Ltd. | Spliced micro light-emitting-diode display panel |
-
2018
- 2018-03-07 CN CN201820317108.7U patent/CN208315549U/en not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI685098B (en) * | 2019-02-01 | 2020-02-11 | 同泰電子科技股份有限公司 | Spliced led circuit board |
CN110570798A (en) * | 2019-07-22 | 2019-12-13 | 深圳市艾比森光电股份有限公司 | Color display panel and control method thereof |
CN112599025A (en) * | 2019-10-02 | 2021-04-02 | 北京易美新创科技有限公司 | Small-sized screen structure and manufacturing method thereof |
CN112530926A (en) * | 2020-08-24 | 2021-03-19 | 錼创显示科技股份有限公司 | Splicing type micro light-emitting diode display panel |
TWI764404B (en) * | 2020-08-24 | 2022-05-11 | 錼創顯示科技股份有限公司 | Spliced micro light emitting diode display panel |
TWI823332B (en) * | 2020-08-24 | 2023-11-21 | 錼創顯示科技股份有限公司 | Spliced micro light emitting diode display panel |
US11887842B2 (en) | 2020-08-24 | 2024-01-30 | PlayNitride Display Co., Ltd. | Spliced micro light-emitting-diode display panel |
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