CN208299012U - A kind of differential bipolar antenna based on substrate integration wave-guide - Google Patents
A kind of differential bipolar antenna based on substrate integration wave-guide Download PDFInfo
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- CN208299012U CN208299012U CN201820589405.7U CN201820589405U CN208299012U CN 208299012 U CN208299012 U CN 208299012U CN 201820589405 U CN201820589405 U CN 201820589405U CN 208299012 U CN208299012 U CN 208299012U
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- gap
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- microstrip line
- substrate
- differential bipolar
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Abstract
The utility model discloses a kind of differential bipolar antenna based on substrate integration wave-guide, including medium substrate, mutually orthogonal the first microstrip line and the second microstrip line is arranged in the medium substrate upper surface, intersection point is located at the central point of medium substrate, the medium substrate lower surface setting gap radiation structure and substrate integrated wave-guide cavity wave structure, the substrate integrated wave-guide cavity wave structure is connected with gap radiation structure, and the middle part of second microstrip line and gap radiation structure are shorted.The utility model has good radiation characteristic.
Description
Technical field
The utility model relates to wireless communication fields, and in particular to a kind of differential bipolar day based on substrate integration wave-guide
Line.
Background technique
The radio systems such as radio broadcasting, communication, telemetering, remote control and navigation are all to transmit letter using radio wave
Number, and the transmitting of radio wave and reception are all completed by antenna.Therefore antenna equipment be in radio system can not or
Scarce important component.Satellite and the communication technology develop very fast in recent years, and satellite broadcasting is also come China is universal, ku
Band satellite digital broadcasting just has small in size compared to wave band c, facilitates receptions, the advantages that small is interfered on ground.It needs sometimes in the communications
Transmit big information content, the low-frequency range of microwave current oneself through very crowded, ku wave band and ka wave band these high frequencies can only be turned to
Section transmits large information capacity, and the antenna of research ku wave band has actual application value.
Substrate integrated waveguide technology be it is proposed in recent years it is a kind of can integrate in dielectric substrate have filter with low insertion loss and
The novel waveguide structure of the characteristics such as Low emissivity, it is by low loss dielectric substrate (such as LTCC that upper bottom surface is metal layer
Dielectric substrate) on, it opens periodical plated-through hole array and realizes.Substrate integrated wave guide structure inherits traditional waveguide device
The good characteristics such as high quality factor and high power capacity, while active and passive integration can be effectively realized again, using SIW reality
Entire microwave and millimeter wave system, can be produced on an encapsulating structure by the passive device of the existing high q-factor such as filter and duplexer
It is interior, make microwave and millimeter wave system compact, and substrate integrated wave guide structure can use PCB or LTCC technique and accurately realize,
Compared with the microwave device of conventional waveguide form, processing cost is very cheap, thus microwave&millimeter-wave IC design and
Have broad application prospects in production.
Differential antennae changes the single port feed design of traditional antenna, straight to two feed ports using duplex feeding port
Connect input differential signal.Differential antennae has following advantage compared with traditional antenna: 1) not needing radio frequency using switching devices such as baluns
The differential signal of front end output is converted to single port signal, can effectively reduce signal in the loss of input port, improve day
The efficiency of line.2) differential antennae can directly connect with the differential signal of radio-frequency front-end system output, possess radio-frequency front-end higher
Integrated level.3) dual polarized antenna uses differential feed, can obtain higher differential port isolation.
Utility model content
In order to overcome shortcoming and deficiency of the existing technology, the utility model provides a kind of based on substrate integration wave-guide
Differential bipolar antenna.
The utility model is by using single-layer medium plate, two microstrip feed lines, " ten " word chiasma type gap structure and base
Piece integral waveguide cavity structure is combined, the substrate collection for proposing that a kind of structure is simple, interport isolation is high, realizing convenient for production
At the differential bipolar antenna of waveguide.
The utility model adopts the following technical solution:
A kind of differential bipolar antenna based on substrate integration wave-guide, including medium substrate, the medium substrate upper surface
Mutually orthogonal the first microstrip line and the second microstrip line be set, and intersection point is located at the central point of medium substrate, under the medium substrate
Gap radiation structure and substrate integrated wave-guide cavity wave structure, the substrate integrated wave-guide cavity wave structure and gap radiation is arranged in surface
Structure is connected, and the middle part of second microstrip line and gap radiation structure are shorted.
The gap radiation structure be " ten " word chiasma type gap, two gaps using medium substrate central point as crosspoint,
+ 45 ° and -45 ° of directions in crosspoint are located at, gap radiation structure is about medium substrate central point and with medium substrate center
Point is symmetrical for the X-axis and Y-axis of origin.
The length and width in two gaps are all the same, and slit width is 0.01 λ0-0.3λ0, a length of 0.5 λ in gap0-2λ0；
Wherein λ0For the corresponding free space wavelength in center of antenna resonance frequency place.
The crosspoint of the gap radiation structure is covered with four rectangle metal structures, four rectangle metal knots
A length of 0.1 λ of structure0-0.5λ0, width is 0.01 λ0-0.4λ0, carrying out width in+45 ° and -45 ° of directions to cross section is 0.01 λ0-
0.2λ0Corner cut, wherein λ0For the corresponding free space wavelength in center of antenna resonance frequency place.
Setting metallization VIA and square gap in the substrate integrated wave-guide cavity wave structure, square gap is located at base
The bottom of piece integral waveguide cavity structure.
The first metallization VIA and second that the middle part setting of second microstrip line is shorted with radiating slot structure metallized
Hole.
First microstrip line and the second microstrip line are located at using medium substrate central point as in the X-axis of origin and Y-axis.
It further include external SMA head, the external SMA head has two groups, and one group of its internal and external conductor connects the first micro-strip respectively
Line and gap radiation structure feed gap, form vertical polarization electromagnetic wave；
Seam gap irradiation structure and the second microstrip line feed gap to another group of internal and external conductor respectively, form horizontal pole
Change electromagnetic wave.
The structure size of first microstrip line and the second microstrip line is identical, is connected by the different microstrip line of three sections of long width
It constitutes.
The gap radiation structure is fed by differential signal, is fed directly into that amplitude is equal and the difference of phase phase difference 180 degree
Signal.
The utility model has the beneficial effects that
The impedance relative bandwidth of the differential bipolar antenna of the substrate integration wave-guide of the utility model be greater than 21%, port every
It is greater than 58dB from degree, antenna pattern keeps stablizing, and structure is simple, is easily worked, and has good application in wireless communication field
Prospect.
Detailed description of the invention
Fig. 1 is the schematic perspective view of the utility model；
Fig. 2 is the top view of Fig. 1；
Fig. 3 is the side view of Fig. 1；
Fig. 4 is the top view of the gap radiation structure in Fig. 1；
Fig. 5 is the top view of the first microstrip line and the second microstrip line in Fig. 1；
Fig. 6 is the substrate integrated wave-guide cavity wave structure in Fig. 1；
Fig. 7 is the impedance and isolation frequency characteristic of the differential bipolar antenna of the substrate integration wave-guide of the utility model
Figure；
Fig. 8 is XOZ plane of the differential bipolar antenna of the substrate integration wave-guide of the utility model at frequency 14.5GHz
Antenna pattern；
Fig. 9 is YOZ plane of the differential bipolar antenna of the substrate integration wave-guide of the utility model at frequency 14.5GHz
Antenna pattern.
Specific embodiment
Below with reference to examples and drawings, the utility model is described in further detail, but the reality of the utility model
It is without being limited thereto to apply mode.
Embodiment
As shown in figs 1 to 6, a kind of differential bipolar antenna based on substrate integration wave-guide, including medium substrate 1, it is described
Mutually orthogonal the first microstrip line 3a and the second microstrip line 3b is arranged in medium substrate upper surface, and intersection point is located at the center of medium substrate
Point, the first microstrip line are located at using medium substrate central point as in the X-axis of origin, the second microstrip line is located in Y-axis, the medium base
Plate lower surface setting gap radiation structure 2 and substrate integrated wave-guide cavity wave structure 5, gap radiation structure are located at medium substrate and base
The centre of piece integral waveguide cavity structure, and connect with substrate integrated wave-guide cavity wave structure, the interposition of second microstrip line
It installs the first metallization VIA 4a and the second metallization VIA 4b and gap radiation structure to be shorted, the first metallization VIA and the
The diameter range of two metallization VIAs is 0.005 λ0-0.2λ0。
The gap radiation structure 2 is " ten " word chiasma type gap, is made of two gaps, is with medium substrate central point
Crosspoint is located at+45 ° and -45 ° of directions in crosspoint, constitutes " ten " word chiasma type gap structure, intersect four of gap
End is in+45 ° and -45 °, and gap radiation structure is about medium substrate central point and using medium substrate central point as the X-axis of origin
And Y-axis is symmetrical.
The structure in two gaps and equal sized, slit width w1 range is 0.01 λ0-0.3λ0, the long w2 range in gap is 0.5
λ0-2λ0.Wherein λ0For the corresponding free space wavelength in center of antenna resonance frequency place.
Wherein λ0For the corresponding free space wavelength in center of antenna resonance frequency place.
Gap crosspoint carries out part covering with four rectangle metal structures, and four rectangle structures are about medium substrate
Center point symmetry, gap radiation structure are class petal design, and the width of rectangle metal structure is w3, a length of w4, to cross section
The corner cut that width is w5 is carried out in+45 ° and -45 ° of directions, wherein the wide w3 range of rectangle metal structure is 0.01 λ0-0.4λ0,
Long w4 range is 0.1 λ0-0.5λ0, the wide w5 range of corner cut is 0.01 λ0-0.2λ0, angle is 45 degree.
Setting metallization VIA 6 and square gap 7 in the substrate integrated wave-guide cavity wave structure, square gap is located at
The bottom of substrate integrated wave-guide cavity wave structure, side length W6 range are 0.15 λ0-0.25λ0。
The a height of d1*d1*h1 of medium substrate length and width, the substrate integrated wave-guide cavity wave structure 5 are located under medium substrate 1
Side and closely medium substrate 1, size d2*d2*h2.Metallization VIA 6 in substrate integrated wave-guide cavity wave structure 5, metallized
The diameter range in hole 6 is 0.005 λ0-0.2λ0, the opposite dielectric of the medium substrate 1 and substrate integrated wave-guide cavity wave structure 5 is normal
Range is counted as 1-10, the thickness range of medium substrate 1 and substrate integrated wave-guide cavity wave structure 5 is 0.03 λ0-0.6λ0。
The first microstrip line 3a and the second microstrip line 3b is micro- by growing respectively s1, s2, s3 and wide respectively g1, g2, g3
Band line forms；The first microstrip line 3a is located in X-axis, and the second microstrip line 3b is located in Y-axis, the first microstrip line 3a
And second microstrip line 3b each parameter area range for being are as follows: the range of s1 is 0.1 λ0-0.6λ0, the range of s2 is 0.1 λ0-0.6
λ0, the range of s3 is 0.1 λ0-0.3λ0, the range of g1 is 0.02 λ0-0.2λ0, the range of g2 is 0.02 λ0-0.2λ0, the range of g3
For 0.005 λ0-0.2λ0。
Impedance matching circuit between the first microstrip line 3a composition and antenna, the second microstrip line 3b and the first gold medal
Categoryization via hole 4a and the second metallization VIA 4b collectively constitute the impedance matching circuit between antenna.
It further include external SMA head, the external SMA head has two groups, and one group of its internal and external conductor connects the first micro-strip respectively
Line and gap radiation structure feed the gap of gap irradiation structure, form vertical polarization electromagnetic wave；
Seam gap irradiation structure and the second microstrip line feed gap to another group of internal and external conductor respectively, form horizontal pole
Change electromagnetic wave.
The gap radiation structure is fed by differential signal, is fed directly into that amplitude is equal and the difference of phase phase difference 180 degree
Signal.
Specific size is as follows in the present embodiment:
Attached drawing 7 is compareed, attached drawing 7 gives when medium substrate 1, substrate integrated wave-guide cavity wave structure 5 are respectively according to opposite Jie
Electric constant is 2.2,3.55, with a thickness of 0.508mm, 4mm；W1 is 0.224 λ in gap radiation structure 20, w2 λ0, w3 0.04
λ0, w4 be 0.0925 λ0, w5 be 0.0165 λ0, w6 be 0.22 λ0, s1 be 0.55 λ0, s2 be 0.55 λ0, s3 be 0.23 λ0, g1 be
0.07λ0, g2 be 0.07 λ0, g3 be 0.015 λ0When, the reflection coefficient of the antenna calculated by HFSS simulation software and isolation
Spend frequency characteristic.
Visible according to the result of Fig. 7, substrate integration wave-guide differential bipolar antenna is when working band is 13GHz-16GHz
Return loss reaches -10dB, and opposite working band width is greater than 21%, and isolation is more than 58dB, and the work with high-isolation is special
Property.
Attached drawing 8,9, attached drawing 8,9 give when medium substrate area is 1.335 λ0*1.335λ0, substrate integrated wave-guide cavity wave
Area is 1.02 λ0*1.02λ0When, the antenna obtained using HFSS Software simulation calculation is when working frequency is 14.5GHz, antenna
In the face XOZ and the face YOZ gain pattern.From attached drawing 8,9, antenna has good radiation characteristic.
Above-described embodiment is the preferable embodiment of the utility model, but the embodiments of the present invention is not by described
The limitation of embodiment, it is made under other any spiritual essence and principles without departing from the utility model to change, modify, replacing
In generation, simplifies combination, should be equivalent substitute mode, is included within the protection scope of the utility model.
Claims (10)
1. a kind of differential bipolar antenna based on substrate integration wave-guide, which is characterized in that including medium substrate, the medium base
Mutually orthogonal the first microstrip line and the second microstrip line is arranged in plate upper surface, and intersection point is located at the central point of medium substrate, is given an account of
Matter base lower surface is arranged gap radiation structure and substrate integrated wave-guide cavity wave structure, the substrate integrated wave-guide cavity wave structure with
Gap radiation structure is connected, and the middle part of second microstrip line and gap radiation structure are shorted.
2. differential bipolar antenna according to claim 1, which is characterized in that the gap radiation structure is the friendship of " ten " word
Forked type gap, two gaps are located at+45 ° and -45 ° of directions in crosspoint using medium substrate central point as crosspoint, about
Medium substrate center point symmetry.
3. differential bipolar antenna according to claim 2, which is characterized in that the length and width in two gaps are equal
Identical, slit width is 0.01 λ0-0.3λ0, a length of 0.5 λ in gap0-2λ0；Wherein λ0To be corresponded at the center of antenna resonance frequency
Free space wavelength.
4. differential bipolar antenna according to claim 2, which is characterized in that use in the crosspoint of the gap radiation structure
Four rectangle metal structures are covered, a length of 0.1 λ of four rectangle metal structures0-0.5λ0, width is 0.01 λ0-0.4
λ0, carrying out width in+45 ° and -45 ° of directions to cross section is 0.01 λ0-0.2λ0Corner cut, wherein λ0For the center of antenna resonance
The corresponding free space wavelength in frequency place.
5. differential bipolar antenna according to claim 1, which is characterized in that in the substrate integrated wave-guide cavity wave structure
Metallization VIA and square gap are set, and square gap is located at the bottom of substrate integrated wave-guide cavity wave structure.
6. differential bipolar antenna according to claim 1, which is characterized in that the middle part setting and radiation of the second microstrip line
The first metallization VIA and the second metallization VIA that gap structure is shorted.
7. differential bipolar antenna according to claim 1, which is characterized in that first microstrip line and the second microstrip line
It is located at using medium substrate central point as in the X-axis of origin and Y-axis.
8. differential bipolar antenna according to claim 1, which is characterized in that it further include external SMA head, it is described external
SMA head have two groups, one group of its internal and external conductor connects the first microstrip line and gap radiation structure respectively to feed to gap, shape
At vertical polarization electromagnetic wave；
Seam gap irradiation structure and the second microstrip line feed gap to another group of internal and external conductor respectively, form horizontal polarization electricity
Magnetic wave.
9. differential bipolar antenna according to claim 1, which is characterized in that first microstrip line and the second microstrip line
Structure size it is identical, connected and composed by three sections of different microstrip lines of long width.
10. differential bipolar antenna according to claim 1, which is characterized in that the gap radiation structure is believed by difference
Number feed, feed-in amplitude is equal and the differential signal of phase phase difference 180 degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820589405.7U CN208299012U (en) | 2018-04-24 | 2018-04-24 | A kind of differential bipolar antenna based on substrate integration wave-guide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820589405.7U CN208299012U (en) | 2018-04-24 | 2018-04-24 | A kind of differential bipolar antenna based on substrate integration wave-guide |
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| Publication Number | Publication Date |
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| CN208299012U true CN208299012U (en) | 2018-12-28 |
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| CN201820589405.7U Expired - Fee Related CN208299012U (en) | 2018-04-24 | 2018-04-24 | A kind of differential bipolar antenna based on substrate integration wave-guide |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108767437A (en) * | 2018-04-24 | 2018-11-06 | 华南理工大学 | A kind of differential bipolar antenna based on substrate integration wave-guide |
| CN110061357A (en) * | 2019-05-09 | 2019-07-26 | 东南大学 | A kind of ipsilateral differential feed formula chip integrated waveguide slot antenna |
-
2018
- 2018-04-24 CN CN201820589405.7U patent/CN208299012U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108767437A (en) * | 2018-04-24 | 2018-11-06 | 华南理工大学 | A kind of differential bipolar antenna based on substrate integration wave-guide |
| CN110061357A (en) * | 2019-05-09 | 2019-07-26 | 东南大学 | A kind of ipsilateral differential feed formula chip integrated waveguide slot antenna |
| CN110061357B (en) * | 2019-05-09 | 2021-05-11 | 东南大学 | Homonymy differential feed type substrate integrated waveguide slot antenna |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
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Granted publication date: 20181228 Termination date: 20210424 |