CN208297917U - Wavelength changing element and projection arrangement - Google Patents
Wavelength changing element and projection arrangement Download PDFInfo
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- CN208297917U CN208297917U CN201820899566.6U CN201820899566U CN208297917U CN 208297917 U CN208297917 U CN 208297917U CN 201820899566 U CN201820899566 U CN 201820899566U CN 208297917 U CN208297917 U CN 208297917U
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Abstract
A kind of Wavelength changing element, including substrate and wavelength conversion layer.Wavelength conversion layer is configured on substrate.Wavelength conversion layer includes the first inorganic solid and wavelength conversion material, and wavelength conversion material is mixed in the first inorganic solid, and the first inorganic solid includes the inorganic solid of the first alcohol-soluble or the first water-soluble inorganic solid.The utility model separately provides a kind of projection arrangement using above-mentioned Wavelength changing element.
Description
Technical field
The utility model is especially with regard to a kind of Wavelength changing element and to use this wavelength about a kind of display device
The projection arrangement of conversion element.
Background technique
Light source type used in projection arrangement is as market is to projection arrangement brightness, color saturation, service life, nothing
Poison ring protect etc. require, from ultrahigh pressure mercury lamp (UHP lamp), light emitting diode (light emitting diode, LED) into
Change to laser diode (laser diode, LD).
The red laser diode of high brightness and the cost of green laser diode are excessively high at present, in order to reduce cost, lead to
Yellow light, green light are generated frequently with the fluorescent powder on blue laser diode excitated fluorescent powder runner, then via colour wheel (filter
Wheel) required feux rouges is filtered out, then the blue light for blue laser diode sending of arranging in pairs or groups, and constituted needed for projected picture
Red Green Blue.
Fluorescent powder runner is to use laser diode for element particularly important in the projection arrangement of light source at present.However,
The phosphor powder layer of known fluorescent powder runner is using high light transmission silica gel mixed fluorescent powder, due to high light transmission silica gel poor thermal conductivity and resistance to
Warm nature is low, therefore can not be in response to the demand of high-power laser projection device.Furthermore it is known that in fluorescent powder runner, diffuse-reflective material
Need to through greater than 400 DEG C hot setting and form diffusing reflection layer, the diffusing reflection layer after solidification have it is more porous, will cause fluorescence
The decline of powder runner reflectivity.
This " background technique " paragraph is used only to help to understand the content of the present invention, therefore is taken off in " background technique "
The content of dew may include some known technologies without constituting road known to those skilled in the art.In addition, in " background technique "
In disclosed content do not represent the content or the utility model one or more embodiment problem to be solved, also not
Representative has been readily known to those persons skilled in the art or has recognized before the present utility model application.
Utility model content
The utility model provides a kind of Wavelength changing element, can promote temperature tolerance, and can promote the resistance to tolerances of energy.
The case where the utility model provides a kind of projection arrangement, can improve image brilliance decline.
The other objects and advantages of the utility model can be obtained from the technical characteristic disclosed by the utility model into one
The understanding of step.
It is the wave provided by an embodiment of the present invention up to one of above-mentioned or partly or entirely purpose or other purposes
Long conversion element includes substrate and wavelength conversion layer.Wavelength conversion layer is configured on substrate.Wavelength conversion layer includes first inorganic
Solid and wavelength conversion material, wavelength conversion material are mixed in the first inorganic solid, and the first inorganic solid includes first
The inorganic solid of alcohol-soluble or the first water-soluble inorganic solid.
It is that an embodiment of the present invention is provided to throw up to one of above-mentioned or part or all of purpose or other purposes
Image device includes lighting system, light valve and projection lens.Lighting system is adapted to provide for illuminating bundle.Light valve is configured at illuminating bundle
Transmission path on, illuminating bundle is converted into image strip.Projection lens is configured on the transmission path of image strip.Its
Middle lighting system includes excitation light source and above-mentioned Wavelength changing element.Excitation light source is adapted to provide for excitation beam.Wavelength convert
In on the transmission path of excitation beam, the wavelength conversion layer of Wavelength changing element is suitable for for excitation beam being converted into element configuration
Light beam is changed, and illuminating bundle includes commutating optical beam.
In the Wavelength changing element of the utility model embodiment, wavelength conversion layer includes that the first inorganic solid and wavelength turn
Conversion materials, the first inorganic solid include that the inorganic solid of the first alcohol-soluble or the first water-soluble inorganic solid, use are above-mentioned
The first inorganic solid made by wavelength conversion layer, due to can directly configure without again via middle dielectric layer gluing,
Compared to known wavelength conversion layer, image brilliance can be promoted.In addition, using wave made by the first above-mentioned inorganic solid
Long conversion layer can improve in turn substrate softening transform or high reflection material film plating demoulding caused by high temperature sintering or film failure
Problem, and temperature tolerance can be promoted, the resistance to tolerances of energy can be also promoted, therefore can operate with high-power projection arrangement.This reality
With the projection arrangement of new embodiment because using above-mentioned Wavelength changing element, therefore the case where image brilliance declines can be improved.
For the above and other objects, features and advantages of the utility model can be clearer and more comprehensible, preferred reality is cited below particularly
Example is applied, and cooperates attached drawing, is described in detail below.
Detailed description of the invention
Fig. 1 is the schematic diagram of the Wavelength changing element of an embodiment of the present invention.
Fig. 2A is the schematic diagram of the Wavelength changing element of another embodiment of the utility model.
Fig. 2 B is the schematic diagram of the Wavelength changing element of another embodiment of the utility model.
Fig. 3 is the light of an embodiment of the present invention in the schematic diagram for being formed by hot spot on Wavelength changing element.
Fig. 4 A is the flow diagram of the manufacturing method of the Wavelength changing element of an embodiment of the present invention.
Fig. 4 B is the flow diagram of the manufacturing method of the Wavelength changing element of another embodiment of the utility model.
Fig. 5 A is the schematic diagram of the Wavelength changing element of another embodiment of the utility model.
Fig. 5 B is the schematic diagram of the Wavelength changing element of another embodiment of the utility model.
Fig. 6 is the block schematic diagram of the projection arrangement of an embodiment of the present invention.
Specific embodiment
Aforementioned and other technology contents, feature and effect in relation to the utility model refer to the one of schema in following cooperation
In the detailed description of preferred embodiment, can clearly it present.The direction term being previously mentioned in following embodiment, such as: upper,
Under, it is left and right, front or rear etc., be only the direction with reference to annexed drawings.Therefore, the direction term used is for illustrating not to use
To limit the utility model.
Fig. 1 is the schematic diagram of the Wavelength changing element of an embodiment of the present invention.Referring to FIG. 1, the wave of the present embodiment
Long conversion element 100 includes substrate 110 and wavelength conversion layer 120.The for example, chip component, but not office of Wavelength changing element 100
It is limited to this, in other embodiments, Wavelength changing element 100 is also possible to wavelength convert wheel, and substrate 110 is, for example, turntable.
Wavelength conversion layer 120 is configured on substrate 110.Wavelength conversion layer 120 includes the first inorganic solid and wavelength conversion material, wave
Long transition material is mixed in the first inorganic solid, and the first inorganic solid includes the inorganic solid of the first alcohol-soluble or the first water
Insoluble inorganic solid, and the solidification temperature of the first inorganic solid is 200 DEG C~300 DEG C.Wavelength conversion material is for example, glimmering
Light powder or quantum dot (Quantum dot), but not limited to this.Above-mentioned 110 material of substrate is, for example, metal, but is not limited to
This, metal is for example including aluminium, aluminium alloy, copper, copper alloy, aluminium nitride, silicon carbide etc..
The ingredient of the above-mentioned inorganic solid of the first alcohol-soluble is for example comprising siloxanes and metal oxide.Metal oxidation
Metal used in object is, for example, aluminium, titanium, zirconium etc..
The ingredient of the first above-mentioned water-soluble inorganic solid is for example comprising silica solution, phosphate, glass cement and water glass
Glass at least one.Transparent liquid, viscosity is for example, presented in the property of such first water-soluble inorganic solid before curing
Less than 1000cps, the penetrance of light is greater than 90%.
Make wavelength conversion layer 120 in the Wavelength changing element 100 of the present embodiment using the first inorganic solid, first
Inorganic solid includes the inorganic solid of alcohol-soluble or water-soluble inorganic solid, is had in the inorganic solid of the first of above-mentioned formula
There is hydroxyl (- OH), during solidifying heating, about in the case where 200 DEG C~300 DEG C, adjacent hydroxyl can be dehydrated and shape
At bond.For example, the colloidal particle surface of the silica solution in water-soluble inorganic solid has a large amount of silanol group (Si-
OH), during heating, colloidal particle can be adjacent to each other, and adjacent hydroxyl can be dehydrated and form-Si-O-Si- in silanol group
Key reaches cured effect.The solidification temperature of such mode is only 200 DEG C~300 DEG C, compared to the solidification temperature of known materials
400 DEG C need to be greater than, the wavelength conversion layer 120 of the utility model embodiment can improve the Small Holes that (> 400 DEG C) of high temperature sintering generate
The characteristic of gap and easily absorption liquid.In addition, the wavelength conversion layer 120 of the present embodiment can mention compared to known wavelength conversion layer
Temperature tolerance is risen, and under same thickness, the resistance to tolerances of energy can be promoted.Using known materials as the wavelength conversion layer of phosphorus silica gel
For, the temperature tolerance of the wavelength conversion layer 120c of the present embodiment is up to 400 DEG C~600 DEG C, and known phosphorus silica gel wavelength convert
The temperature tolerance of layer is only about 200 DEG C.And the excitation beam energy that the wavelength conversion layer 120c of the present embodiment can bear, about
The 150%~180% of the phosphorus silica gel wavelength conversion layer known.
To reach said effect, thickness of the wavelength conversion layer 120 of the present embodiment on the direction C perpendicular to substrate 110
Range is, for example, 0.10mm~0.25mm.First inorganic solid account for the volume ratio for example 5% of wavelength conversion layer 120~
50%, weight percent is, for example, 5%~50%.
Fig. 2A, 2B are the schematic diagrames of the Wavelength changing element of another two embodiment of the utility model.Please refer to Fig. 2A, 2B, wave
Long conversion element 100a, 100b are similar to the features and benefits of above-mentioned Wavelength changing element 100, and difference is Wavelength changing element
100a, 100b for example further include reflecting layer.
In the Wavelength changing element 100a of the embodiment of Fig. 2A, reflectance layer for example high reflection layer 130 is configured at substrate
Between 110 and wavelength conversion layer 120.The material of high reflection layer 130 is for example including silver, silver alloy, aluminium, aluminium alloy or dielectric medium.
When the material of high reflection layer 130 is by the above-mentioned metal illustrated, additionally dielectric substance layer and protective layer can be added at least within again
One of, protective layer can protect metal to avoid being oxidized.
In the Wavelength changing element 100b of the embodiment of Fig. 2 B, reflectance layer for example diffusing reflection layer 140 is configured at substrate
Between 110 and wavelength conversion layer 120, diffusing reflection layer 140 is including the second inorganic solid and is mixed in diffusing reflection grain therein
Son, the second inorganic solid include the inorganic solid of the second alcohol-soluble or the second water-soluble inorganic solid.Wherein second is inorganic
Solid can be the inorganic solid of any of the above-described embodiment.
The material of above-mentioned diffusing reflection particle is, for example, white particles, and including titanium dioxide, silica, aluminium oxide,
Boron nitride and zirconium dioxide at least one, but not limited to this.
Diffusing reflection layer 140 is made using the second inorganic solid in the Wavelength changing element 100b of the present embodiment, due to
Second inorganic solid can be the inorganic solid of any of the above-described embodiment, therefore the solidification temperature of the second inorganic solid is only
It is 200 DEG C~300 DEG C, the solidification temperature compared to known materials need to be greater than 400 DEG C, the diffusing reflection layer of the utility model embodiment
140 can improve the characteristic of the tiny hole that (> 400 DEG C) of high temperature sintering generate and easily absorption liquid, and light is made to be incident to diffusing reflection
It is easier to be reflected when layer 140, therefore the reflectivity of Wavelength changing element 100b can be promoted.For the utility model embodiment,
The reflectivity for the light that diffusing reflection layer 140 is 400nm~700nm for wavelength is more than or equal to 92%.
To reach above-mentioned diffusing reflection effect, thickness of the above-mentioned diffusing reflection layer 140 on the direction C perpendicular to substrate 110
Degree for example, 0.03mm~0.15mm, the partial size of diffusing reflection particle is, for example, 5nm~500nm.In addition, above-mentioned inorganic solid
The volume ratio for example 10%~80% of diffusing reflection layer 140 is accounted for, weight percent is, for example, 30%~70%.
Fig. 3 is the light of an embodiment of the present invention in the schematic diagram for being formed by hot spot on Wavelength changing element.Please
With reference to Fig. 1,2 and Fig. 3, configured by above-mentioned wavelength conversion layer 120 and reflecting layer (high reflection layer 130 or diffusing reflection layer 140)
When on substrate 110, wavelength conversion layer 120 and reflecting layer (high reflection layer 130 or diffusing reflection layer 140) are being parallel to substrate 110
Direction A on width D (two layers of same size in the present embodiment, therefore only represent with D two layers of width) all need to be greater than light
Line in the hot spot S formed on Wavelength changing element 100,100a, 100b long axis B (with the wavelength conversion layer of top layer in Fig. 3
120 signals), enable light to be irradiated in Wavelength changing element 100, on 100a, 100b, to promote the utilization rate of light.
Fig. 4 A is the flow diagram of the manufacturing method of the Wavelength changing element of an embodiment of the present invention.Please refer to figure
1 and Fig. 4 A, the manufacturing method of the Wavelength changing element 100 of the present embodiment is the following steps are included: carry out step S101: providing substrate
110, then, carries out step S103: wavelength conversion layer 120 is formed on substrate 110.
Fig. 4 B is the flow diagram of the manufacturing method of the Wavelength changing element of another embodiment of the utility model.It please refers to
The manufacturing method of Fig. 2A, 2B and Fig. 4 B, Wavelength changing element 100a, 100b of the present embodiment are the following steps are included: carry out step
S201 provides substrate 110, then, carries out step S202, reflecting layer is formed on substrate 110, executes step again later
Wavelength conversion layer 120 is formed on reflecting layer by S203.In the embodiment of Fig. 4 B, reflecting layer is located at substrate 110 and wavelength turns
It changes between layer 120.
In the manufacturing method of Fig. 4 B, by taking the embodiment of Fig. 2A as an example, specifically, reflecting layer is high reflection layer 130,
Carry out step 201 after, then step S202 be, for example, by high reflection layer 130 by be deposited or sputter in a manner of plated film in substrate
110 first surface 111, then, step S203 are, for example, to be coated with or be printed in high reflection layer 130 for wavelength conversion layer 120
Far from substrate 110 second surface 131, then make wavelength conversion layer 120 200 DEG C~300 DEG C at a temperature of solidified.
In the manufacturing method of Fig. 4 B, if by taking the embodiment of Fig. 2 B as an example, specifically, reflecting layer is diffusing reflection layer 140,
It is, for example, then the first table that diffusing reflection layer 140 is coated with or is printed in substrate 110 in step S202 after carrying out step 201
Face 111, then make diffusing reflection layer 140 200 DEG C~300 DEG C at a temperature of solidified, then, step S203 is, for example, by wavelength
Conversion layer 120 is coated with or is printed in the second surface 141 of the separate substrate 110 of diffusing reflection layer 140, then makes wavelength conversion layer 120
200 DEG C~300 DEG C at a temperature of solidified.
By taking Fig. 2 B as an example, when manufacturing above-mentioned Wavelength changing element 100b, diffusing reflection layer 140 and wavelength conversion layer 120
Width D on the direction A for being parallel to substrate 110 can be identical or different, however to reach preferred diffusing reflection effect, overflow
The width of 120 the two of reflecting layer 140 and wavelength conversion layer is, for example, 0.7~1.5 than range.Different implementations will be illustrated below
Coating condition in example.
Diffusing reflection layer 140 and width of the wavelength conversion layer 120 on the direction A for being parallel to substrate 110 in the embodiment of Fig. 2 B
It is identical for spending D (hereinafter referred to as width).Fig. 5 A is the signal of the Wavelength changing element 100c of another embodiment of the utility model
Figure.Fig. 5 B is the schematic diagram of the Wavelength changing element 100d of another embodiment of the utility model.Fig. 5 A and Fig. 5 B is please referred to, unrestrained
In the embodiment of width D 2 of the width D 1 of reflecting layer 140c less than wavelength conversion layer 120c (Fig. 5 A), by wavelength conversion layer 120c
When being coated on diffusing reflection layer 140c, the periphery of wavelength conversion layer 120c can for example cover the two sides of diffusing reflection layer 140c and straight
It connects and is coated on substrate 110, the gluing for enabling wavelength conversion layer 120c more firm allows Wavelength changing element 100c in substrate 110
Overall structure it is more stable.In addition, can also make width D 4 of the width D 3 of diffusing reflection layer 140 greater than wavelength conversion layer 120d (such as
Shown in Fig. 5 B).
Fig. 6 is the block schematic diagram of the projection arrangement of an embodiment of the present invention.Referring to FIG. 6, in the present embodiment,
Above-mentioned Wavelength changing element 100 is, for example, wavelength convert wheel, and substrate 110 therein is, for example, turntable.The projection of the present embodiment
Device 1 includes lighting system 10, light valve 20 and projection lens 30.Lighting system 10 is adapted to provide for illuminating bundle L1.Lighting system
10 include excitation light source 11 and above-mentioned Wavelength changing element 100 (wavelength convert wheel).Excitation light source 11 is adapted to provide for exciting light
Beam Le.Wavelength changing element 100 is configured on the transmission path of excitation beam Le, and including wavelength-converting region (not shown).Wave
Long transition zone includes above-mentioned wavelength conversion layer 120 and reflecting layer (can be high reflection layer 130 or diffusing reflection layer 140), and wavelength turns
The wavelength-converting region for changing element 100 is suitable for for excitation beam Le being converted into commutating optical beam Lp, and illuminating bundle L1 includes conversion
Light beam Lp, but not limited to this.Lighting system 10 can further include other optical elements, such as: light combination element, colour wheel, light uniformization
Element and collector lens, so that illuminating bundle L1 is transferred to light valve 20.Light valve 20 is configured on the transmission path of illuminating bundle L1,
Illuminating bundle L1 is converted into image strip L2.Light valve 20 can be perforation light-valve or optical valve in reflection type, wherein penetration
Light valve can be liquid crystal display panel, and optical valve in reflection type can be digital micromirror elements (digital micro-mirror
Device, DMD) or silica-based liquid crystal panel (liquid crystal on silicon panel, LCoS panel).According to difference
Design architecture, the quantity of light valve can be one or more.Projection lens 30 is configured on the transmission path of image strip L2, and
For making image strip L2 project projection arrangement 1.
It is by taking the Wavelength changing element 100 of Fig. 1 as an example in Fig. 6, but Wavelength changing element 100 is alternatively at any of the above-described reality
Apply the Wavelength changing element of example.
And when the projection arrangement 1 of the present embodiment uses above-mentioned Wavelength changing element 100,100a, 100b, 100c, 100d
When, since wavelength conversion layer 120,120c, 120d use above-mentioned inorganic solid, on manufacturing method thereof, wavelength conversion layer 120
It can be directly coated on substrate 110, alternatively, high reflection layer 130, diffusing reflection layer 140,140c can be directly coated on substrate 110,
Wavelength conversion layer 120,120c, 120d are coated on high reflection layer 130, diffusing reflection layer 140,140c, thus be not necessary to again via
Middle dielectric layer gluing is to substrate 110, and since middle dielectric layer may will affect the thermally conductive of Wavelength changing element and reflection effect
Fruit, thus above-mentioned Wavelength changing element 100,100a, 100b, 100c can improve compared to known Wavelength changing element it is sharp
Because influencing the situation of reflecting effect by middle dielectric layer when luminous beam Le incidence, and then improve the feelings of image brilliance decline
Condition.In addition, by taking aluminum base plate as an example, more than 300 DEG C at a temperature of may generate substrate softening transform the case where, furthermore,
The high reflection layer material of general aforementioned plated film more than 300 DEG C at a temperature of may generate demoulding or film failure the case where, if
Using above-mentioned manufacturing method thereof, wavelength conversion layer 120 is directly coated at when being solidified on substrate 110 or diffusing reflection layer 140,
140c is directly coated at when being solidified on substrate or wavelength conversion layer 120 is coated on high reflection layer 130 and is solidified
When, since solidification temperature is 200 DEG C~300 DEG C, known materials of the solidification temperature greater than 400 DEG C can be improved and be directly coated at
Substrate softening transform problem caused by substrate, or known materials of the solidification temperature greater than 400 DEG C can be improved and be coated on height
Demoulding or film Problem of Failure caused by reflecting material.Furthermore compared to known wavelength conversion layer, above-mentioned wavelength convert
Layer 120,120c, 120d can promote temperature tolerance, and can promote the resistance to tolerances of energy.
The projection arrangement 1 of the present embodiment due to use the above-mentioned Wavelength changing element 100b, 100c for promoting reflectivity,
100d, therefore image brilliance can be promoted.For example, will use material is that the wavelength conversion layer of phosphorus glass adds the utility model real
It applies the Wavelength changing element 100b of the diffusing reflection layer 140 of example and is added using the wavelength conversion layer that material is phosphorus glass known unrestrained anti-
The Wavelength changing element for penetrating layer carries out integrating sphere brightness measurement, the Wavelength changing element 100b of the utility model embodiment compared to
Using the Wavelength changing element of known diffusing reflection layer, brightness can promote about 3%.
In conclusion in the Wavelength changing element of the utility model embodiment, wavelength conversion layer include first it is inorganic then
Agent and wavelength conversion material, the first inorganic solid include the inorganic solid of the first alcohol-soluble or the first water-soluble inorganic then
Agent, using wavelength conversion layer made by the first above-mentioned inorganic solid, due to can directly be coated with without again via centre
Dielectric layer gluing can promote image brilliance compared to known wavelength conversion layer.In addition, inorganic then using above-mentioned first
It is de- that wavelength conversion layer made by agent can improve substrate softening transform or high reflection material film plating caused by high temperature sintering in turn
The problem of film or film fail, and temperature tolerance can be promoted, the resistance to tolerances of energy can be also promoted, therefore can operate with high-power throwing
Image device.The production method of the Wavelength changing element of the utility model embodiment due to using the inorganic solid of above-mentioned first,
Therefore above-mentioned Wavelength changing element can be produced.The projection arrangement of the utility model embodiment is because using above-mentioned wavelength to turn
The case where changing element, therefore image brilliance decline can be improved.
The above, the only preferred embodiment of the utility model are implemented when that cannot limit the utility model with this
Range, i.e., it is all according to simple equivalence changes made by the utility model claims book and specification and modification, all still belong to
In the range of the utility model patent covers.In addition, any embodiment or claim of the utility model are not necessary to reach this reality
With novel disclosed whole purposes or advantage or feature.In addition, abstract part and topic are intended merely to auxiliary patent document inspection
Rope is used, and not is used to limit the interest field of the utility model.In addition, referred in this specification or claims " the
One ", the terms such as " second " are only to name the title of element (element) or distinguish different embodiments or range, and not use
Come the quantitative upper limit of restriction element or lower limit.
Appended drawing reference
1: projection arrangement
10: lighting system
11: excitation light source
20: light valve
30: projection lens
100,100a, 100b, 100c, 100d: Wavelength changing element
110: substrate
111: first surface
120,120c, 120d: wavelength conversion layer
140,140c: diffusing reflection layer
131,141: second surface
A: parallel direction
C: vertical direction
B: long axis
D, D1, D2, D3, D4: width
L1: illuminating bundle
L2: image strip
Le: excitation beam
Lp: commutating optical beam
S: hot spot
S101, S103, S201, S202, S203: step
Claims (14)
1. a kind of Wavelength changing element, which is characterized in that including substrate and wavelength conversion layer:
The wavelength conversion layer is disposed on the substrate, and the wavelength conversion layer includes the first inorganic solid and wavelength convert
Material, the wavelength conversion material are mixed in the described first inorganic solid, and the first inorganic solid includes that the first alcohol is molten
The inorganic solid of property or the first water-soluble inorganic solid.
2. Wavelength changing element as described in claim 1, which is characterized in that described the first of the wavelength conversion layer is inorganic to be connect
Agent be the inorganic solid of the first alcohol-soluble, the ingredient of the inorganic solid of the first alcohol-soluble includes siloxanes and gold
Belong to oxide.
3. Wavelength changing element as described in claim 1, which is characterized in that described the first of the wavelength conversion layer is inorganic to be connect
Agent be the first water-soluble inorganic solid, the ingredient of the first water-soluble inorganic solid includes silica solution, phosphoric acid
Salt, glass cement and waterglass at least one.
4. Wavelength changing element as described in claim 1, which is characterized in that the Wavelength changing element further includes reflecting layer,
The reflecting layer is configured between the substrate and the wavelength conversion layer.
5. Wavelength changing element as claimed in claim 4, which is characterized in that the reflecting layer of the Wavelength changing element is
High reflection layer, the material of the high reflection layer include silver, silver alloy, aluminium, aluminium alloy and dielectric medium at least one.
6. Wavelength changing element as claimed in claim 4, which is characterized in that the reflecting layer of the Wavelength changing element is
Diffusing reflection layer, the diffusing reflection layer include the second inorganic solid and are mixed in multiple diffusing reflection particles therein, and described the
Two inorganic solids include the inorganic solid of the second alcohol-soluble or the second water-soluble inorganic solid.
7. Wavelength changing element as claimed in claim 6, which is characterized in that described the second of the diffusing reflection layer is inorganic then
Agent is the inorganic solid of the second alcohol-soluble, and the ingredient of the inorganic solid of the second alcohol-soluble includes siloxanes and metal
Oxide.
8. Wavelength changing element as claimed in claim 6, which is characterized in that described the second of the diffusing reflection layer is inorganic then
Agent be the second water-soluble inorganic solid, the ingredient of the second water-soluble inorganic solid include silica solution, phosphate,
Glass cement and waterglass at least one.
9. Wavelength changing element as claimed in claim 6, which is characterized in that the material of the multiple diffusing reflection particle includes two
Titanium oxide, silica, aluminium oxide, boron nitride and zirconium dioxide at least one.
10. Wavelength changing element as claimed in claim 6, which is characterized in that the diffusing reflection layer and the wavelength conversion layer
Width ratio on the direction for being parallel to the substrate is 0.7~1.5.
11. Wavelength changing element as described in claim 1, which is characterized in that described the first of the wavelength conversion layer is inorganic
The solidification temperature of solid is 200 DEG C~300 DEG C.
12. Wavelength changing element as claimed in claim 6, which is characterized in that described the second of the diffusing reflection layer is inorganic to be connect
Agent solidification temperature be 200 DEG C~300 DEG C.
13. Wavelength changing element as described in claim 1, which is characterized in that the Wavelength changing element is wavelength convert wheel,
The substrate is turntable.
14. a kind of projection arrangement, which is characterized in that including lighting system, light valve and projection lens,
The lighting system is adapted to provide for illuminating bundle,
The light valve is configured on the transmission path of the illuminating bundle, and the illuminating bundle is converted into image strip,
The projection lens is configured on the transmission path of the image strip,
Wherein the lighting system includes excitation light source and Wavelength changing element:
The excitation light source is adapted to provide for excitation beam；And
The Wavelength changing element is configured on the transmission path of the excitation beam, the wavelength of the Wavelength changing element
Conversion layer is suitable for the excitation beam being converted into commutating optical beam, and the illuminating bundle includes the commutating optical beam, and wherein
The Wavelength changing element includes substrate and wavelength conversion layer:
The wavelength conversion layer is disposed on the substrate, and the wavelength conversion layer includes the first inorganic solid and wavelength convert
Material, the wavelength conversion material are mixed in the described first inorganic solid, and the first inorganic solid includes that the first alcohol is molten
The inorganic solid of property or the first water-soluble inorganic solid.
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