CN208142184U - Display panel - Google Patents
Display panel Download PDFInfo
- Publication number
- CN208142184U CN208142184U CN201820096718.9U CN201820096718U CN208142184U CN 208142184 U CN208142184 U CN 208142184U CN 201820096718 U CN201820096718 U CN 201820096718U CN 208142184 U CN208142184 U CN 208142184U
- Authority
- CN
- China
- Prior art keywords
- layer
- display panel
- metal layer
- overflow structure
- panel according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
A kind of display panel, including underlay substrate, the luminescent layer being formed on the underlay substrate, anti-overflow structure and thin-film encapsulation layer, the luminescent layer is located at display area, the anti-overflow structure is located at non-display area and around the luminescent layer, the thin-film encapsulation layer coats the luminescent layer and the anti-overflow structure, the anti-overflow structure includes the multilayer pad level of main part and the height for increasing the anti-overflow structure, and the multilayer pad level interts with the main part to be stacked.The display panel of the utility model can effectively stop the excessive of organic layer in encapsulation process, improve packaging effect.
Description
Technical field
The utility model relates to a kind of display panels, belong to OLED field of display technology.
Background technique
It is well known that Flexible Displays have been increasingly becoming an important trend of the following display technology development, organic light emission
Diode (Organic Light Emitting Diode, OLED) display has many advantages, such as self-luminous, frivolous power saving, can also base
Flexible display apparatus is made in flexible material, can be curled, fold or as wearable device a part, in flexibility
The advantage of display field has been apparent.OLED flexible display apparatus mainly includes flexible base plate (Flexible
Substrate), buffer layer (Buffer Layer), thin film transistor (TFT) (Thin Film Transistor, TFT), organic light emission
Diode and thin-film encapsulation layer (Thin Film Encapsulation, TFE).Since Organic Light Emitting Diode is contacting
After water, oxygen, electrochemical reaction can be generated with it, component internal electrode and organic material is destroyed, causes the dim spot of luminous zone, and drop
Low component efficiency and service life.Display device is sensitive to water oxygen, and therefore, packaging effect directly affects the use of display device
Service life becomes the important technological problems of Flexible Displays development so how to improve the packaging effect of OLED flexible display apparatus
One of.
The common thin film encapsulation technology of OLED flexible display apparatus is alternately stacked to obstruct using inorganic layer, organic layer at present
The invasion of water oxygen molecule, organic layer will be excessive, and organic layer is excessive more, causes the risk of package failure also bigger.
Utility model content
The purpose of this utility model is to provide a kind of display panels, and organic layer can be effectively stopped in encapsulation process
It is excessive, improve packaging effect.
Display panel provided by the utility model including underlay substrate, the luminescent layer being formed on the underlay substrate, is prevented
Flow structure and thin-film encapsulation layer, the luminescent layer are located at display area, and the thin-film encapsulation layer coats the luminescent layer, described
Anti-overflow structure includes main part and the padded portion of multilayer, and the padded portion of multilayer interts with the main part to be stacked.
Further, the main part of the anti-overflow structure include insulation material layer, first material layer, second material layer and
Third material layer any appoints several.
Further, the anti-overflow structure is not more than far from the upper surface of luminescent layer side close to the lower surface of luminescent layer side
Product.
Further, the anti-overflow structure normal section is in trapezoid or square.
Further, the padded portion of the multilayer includes silicon membrane layer, the first metal layer, second metal layer, third metal layer
It is several with appointing for transparency conducting layer.
Further, the silicon membrane layer with a thickness of 40~60 nanometers and/or the first metal layer with a thickness of 200
~300 nanometers, the second metal layer with a thickness of 200~300 nanometers and/or the third metal layer with a thickness of 400~
600 nanometers and/or the transparency conducting layer with a thickness of 100~150 nanometers.
Further, the first metal layer is a part of grid layer, and the second metal layer is the one of capacitor plate
Part, third metal layer are a part of the source-drain electrode metal layer, and the first material layer is one of the planarization layer
Point, the transparency conducting layer is a part of the anode layer, and the second material layer is a part of the pixel confining layer,
The third material layer is a part of the wall.
Further, the main part height is 4600 nanometers~5800 nanometers.
Further, the effective height of the anti-overflow structure is 5500~7160 nanometers.
Further, the display panel is OLED display panel.
The anti-overflow structure of display panel provided by the embodiment of the utility model is equipped with multilayer pad level, and anti-spilling structure adds
Height can effectively prevent the excessive caused package failure of organic layer during thin-film package, improve packaging effect.
Detailed description of the invention
Fig. 1 is the schematic diagram of the anti-overflow structure of the display panel of the utility model first embodiment.
Fig. 2 is the structural schematic diagram of the display panel of the utility model first embodiment.
Fig. 3 is the structural schematic diagram of the display panel of the utility model second embodiment.
Fig. 4 is the structural schematic diagram of the display panel of the utility model 3rd embodiment.
Specific embodiment
Further to illustrate that the utility model is to reach the technical approach and effect that predetermined purpose of utility model is taken,
With reference to the accompanying drawings and embodiments, it to specific embodiment of the present utility model, structure, feature and its effect, is described in detail such as
Afterwards.
[first embodiment]
As depicted in figs. 1 and 2, the utility model first embodiment provides a kind of display panel, including underlay substrate 100,
The luminescent layer 200 and anti-overflow structure 300 being formed on underlay substrate 100, luminescent layer 200 is located at display area, described anti-overflow
Flow structure 300 is located at non-display area and around luminescent layer 200, and anti-overflow structure 300 in encapsulating light emitting layer 200 for stopping
Organic layer in encapsulating material is excessive.In the present embodiment, anti-overflow structure 300 is including main part 320 and for increasing anti-overflow
The multilayer pad level 310 of the overall height of structure 300, multilayer pad level 310 interts with main part 320 to be stacked.
Specifically, underlay substrate 100 is flexible base board, including dianegative 101, the resistance being arranged on dianegative 101
Interlayer 102.Dianegative 101 is, for example, the flexible plastic film made by polyimides (PI), but is not limited thereto.Barrier layer
102 are arranged on dianegative 101 and between dianegative 101 and luminescent layer 200, for inhibiting moisture, oxygen etc. past
Element internal penetration.Barrier layer 102 is for example including by silicon nitride (SiNx) and/or Si oxide (SiOx) etc. made of multilayer
Stacked structure.
The main part 320 of anti-overflow structure 300 includes multi-layer insulation layer 330 and is arranged in multi-layer insulation layer
First material layer 321, second material layer 322 and third material layer 323 on 330.
Multilayer pad level 310 is drawn by display area, including silicon membrane layer 311, the first metal layer 312, second metal layer
313, third metal layer 314 and transparency conducting layer 315.
As shown in Figure 1, insulation material layer 330 is specially three layers, including the first insulation material layer 331, the second insulating materials
Layer 332 and third insulation material layer 333.Anti-overflow structure 300 specifically includes the silicon membrane layer for stacking gradually setting from lower to upper
311, the first insulation material layer 331, the first metal layer 312, the second insulation material layer 332, second metal layer 313, third insulation
Material layer 333, third metal layer 314, first material layer 321, transparency conducting layer 315, second material layer 322 and third material layer
323。
Wherein, silicon membrane layer 311 with a thickness of 40~60 nanometers, the first metal layer 312 with a thickness of 200~300 nanometers,
Second metal layer 313 with a thickness of 200~300 nanometers, third metal layer 314 with a thickness of 400~600 nanometers.
The display panel of the present embodiment is, for example, OLED display panel, and luminescent layer 200 is interior more equipped with being arranged in array
A OLED display unit, each OLED display unit is interior to be equipped with thin film transistor (TFT) 210, planarization layer 220 and organic light-emitting diodes
Pipe 230.Planarization layer 220 covers thin film transistor (TFT) 210, and Organic Light Emitting Diode 230 is arranged on planarization layer 220.
In the present embodiment, thin film transistor (TFT) 210 is top gate structure, but is not limited thereto.Specifically, thin film transistor (TFT)
210 include semiconductor layer 211, grid 212, capacitor plate 213, source-drain electrode metal layer 214 and multilayer interlayer insulating film 215.
Specifically, as shown in Fig. 2, semiconductor layer 211 is arranged on underlay substrate 100；First interlayer insulating film 2151 is set
It sets on underlay substrate 100 and covers semiconductor layer 211.Grid 212 is arranged on the first interlayer insulating film 2151 and is located at half
The top of conductor layer 211.Second interlayer insulating film 2152 is arranged on the first interlayer insulating film 2151 and covers grid 212.Electricity
Hold pole plate 213 and the top on second interlayer insulating film 2152 and being located at grid 212 and the formation storage capacitors knot of grid 212 are set
Structure.Third interlayer insulating film 2153 is arranged on the second interlayer insulating film 2152 and covers capacitor plate 213.Source-drain electrode metal layer
214 are arranged on third interlayer insulating film 2153.
The multilayer pad level 310 of anti-overflow structure 300 is drawn by display area, i.e. anti-overflow structure 300 and luminescent layer 200
It is to be formed in same manufacture craft.Wherein, silicon membrane layer 311 is a part of semiconductor layer 211, and the first metal layer 312 is
A part of grid 212, second metal layer 313 are a part of capacitor plate 213, and third metal layer 314 is source-drain electrode metal
A part of layer 214.Silicon membrane layer 311, the first metal layer 312, second metal layer 313 and third metal layer 314 overall thickness
About 840~1260 nanometers.
It is appreciated that the multi-layer insulation layer 330 in anti-overflow structure 300 is drawn by display area.Wherein,
One insulation material layer 331 is a part of the first interlayer insulating film 2151, and the second insulation material layer 332 is the second interlayer insulating film
2152 a part, third insulation material layer 333 are a part of third interlayer insulating film 2153.
Planarization layer 220 is arranged on thin film transistor (TFT) 210 and covers thin film transistor (TFT) 210 far from underlay substrate 100
Surface.
Organic Light Emitting Diode 230 is arranged on planarization layer 220, including anode layer 231, pixel confining layer 232, interval
Layer 233, organic luminous layer 234 and cathode layer 235.The structure of Organic Light Emitting Diode 230 is well known to those skilled in the art,
Details are not described herein.
Wherein first material layer 321 is a part of planarization layer 220, and transparency conducting layer 315 is one of anode layer 231
Point, second material layer 322 is a part of pixel confining layer 232, and third material layer 323 is a part of wall 233.
First material layer 321 with a thickness of 1800~2200 nanometers, transparency conducting layer 315 is received with a thickness of 100~150
Rice, second material layer 322 with a thickness of 1400~1800 nanometers, third material layer 323 with a thickness of 1400~1800 nanometers.
Since the first insulation material layer 331, the second insulation material layer 332 and third insulation material layer 333 are paved with entirely
Underlay substrate 100 does not influence the effective height of stacking in the anti-overflow structure 300 of formation, therefore, anti-overflow structure 300
Effective height for preventing encapsulating material excessive is by silicon membrane layer 311, the first metal layer 312, second metal layer 313,
Three metal layers 314, transparency conducting layer 315, first material layer 321, second material layer 322 and third material layer 323 are cumulative to be obtained,
Its altitude range is 5500~7160 nanometers.
Hold it is above-mentioned, anti-overflow structure 300 have top surface 301, between anti-overflow structure 300 and luminescent layer 200 have groove
400, it is recessed that the effective height excessive for barrier encapsulation material of anti-overflow structure 300 refers to that the top surface 301 of anti-overflow structure 300 is arrived
Vertical range H between the minimum point of slot 400.Vertical range H is by silicon membrane layer 311, the first metal layer 312, second
Metal layer 313, third metal layer 314, first material layer 321, transparency conducting layer 315, second material layer 322 and third material layer
The difference in height that 323 heap poststacks and 300 surrounding of anti-overflow structure are formed.
[second embodiment]
As shown in figure 3, the display surface that display panel and first embodiment that the utility model second embodiment provides provide
The structure of plate is roughly the same, the difference is that：Thin film transistor (TFT) 210 is bottom grating structure, i.e., semiconductor layer 211 is arranged in grid
212 top, therefore, the corresponding silicon membrane layer 311 in anti-overflow structure 300 also are located at the top of the first metal layer 312.Source and drain
Pole metal layer 214 further includes the second capacitor plate 2141, and the second capacitor plate 2141 is located at top and the capacitor of capacitor plate 213
Pole plate 213 forms storage capacitor structure.
The anti-overflow structure 300 of the present embodiment is exhausted including the first metal layer 312, first for stacking gradually setting from lower to upper
Edge material layer 331, silicon membrane layer 311, the second insulation material layer 332, second metal layer 313, third insulation material layer 333,
Three metal layers 314, first material layer 321, transparency conducting layer 315, second material layer 322 and third material layer 323.
[3rd embodiment]
As shown in figure 4, display panel further includes packaging film structure 500, packaging film structure 500 is arranged in underlay substrate
On 100 and coat luminescent layer 200 and anti-overflow structure 300.Packaging film structure 500 is alternately stacked by inorganic layer, organic layer, this
In embodiment, packaging film structure 500 includes at least the first inorganic layer 501 stacked gradually from the bottom to top, organic layer 502, the
Two inorganic layers 503.Wherein, the first inorganic layer 501 and the second inorganic layer 503 gluing, sealing above anti-overflow structure 300 contact,
The organic layer 502 being clamped between the first inorganic layer 501 and the second inorganic layer 503 is then the next in the blocking of anti-overflow structure 300
In the inside (close to the side of luminescent layer 200) of anti-overflow structure 300, i.e. organic packages during being coated with organic packaging materials
Material is blocked by anti-overflow structure 300.When the encapsulating material of these inorganic layers, organic layer is arranged, due to anti-overflow structure
300 height is higher, and it is excessive effectively to block organic layer, it is therefore prevented that and steam is penetrated into inside luminescent layer 200 by organic layer,
And then improve packaging effect.
The utility model has the beneficial effects that：The anti-overflow structure of display panel is equipped with multilayer pad level, and anti-spilling structure adds
Height can effectively prevent the excessive caused package failure of organic layer during thin-film package, improve packaging effect.
The above descriptions are merely preferred embodiments of the present invention, not makees in any form to the utility model
Limitation be not intended to limit the utility model although the utility model has been disclosed with preferred embodiment as above, it is any ripe
Professional and technical personnel is known, is not being departed within the scope of technical solutions of the utility model, when in the technology using the disclosure above
Hold the equivalent embodiment made a little change or be modified to equivalent variations, but all without departing from technical solutions of the utility model
Hold, any simple modification, equivalent change and modification made by the above technical examples according to the technical essence of the present invention, still
It is within the scope of the technical solutions of the present invention.
Claims (10)
1. a kind of display panel, which is characterized in that including underlay substrate (100), the hair being formed on the underlay substrate (100)
Photosphere (200), anti-overflow structure (300) and thin-film encapsulation layer (500), the luminescent layer (200) is located at display area, described thin
Film encapsulated layer (500) coats the luminescent layer (200), and the anti-overflow structure (300) includes that main part (320) and multilayer are padded
Portion (310), the padded portion of multilayer (310) is interted with the main part (320) to be stacked.
2. display panel according to claim 1, which is characterized in that the main part (320) of the anti-overflow structure (300)
Including any of insulation material layer (330), first material layer (321), second material layer (322) and third material layer (323)
Or appoint several.
3. display panel according to claim 2, which is characterized in that the anti-overflow structure (300) is far from luminescent layer side
Upper surface be not more than close to luminescent layer side following table area.
4. display panel according to claim 3, which is characterized in that anti-overflow structure (300) normal section is in positive ladder
Shape or square.
5. display panel according to claim 2, which is characterized in that the padded portion of multilayer (310) includes silicon membrane layer
(311), the first metal layer (312), second metal layer (313), third metal layer (314) and transparency conducting layer (315) appoint it is several
Kind.
6. display panel according to claim 5, which is characterized in that the silicon membrane layer (311) with a thickness of 40~60
Nanometer and/or the first metal layer (312) with a thickness of 200~300 nanometers, the second metal layer (313) with a thickness of
200~300 nanometers and/or the third metal layer (314) with a thickness of 400~600 nanometers and/or the transparency conducting layer
(315) with a thickness of 100~150 nanometers.
7. display panel according to claim 5, which is characterized in that the luminescent layer (200) includes thin film transistor (TFT)
(210), planarization layer (220) and Organic Light Emitting Diode (230), the planarization layer (220) cover the thin film transistor (TFT)
(210), the Organic Light Emitting Diode (230) is arranged on the planarization layer (220)；Thin film transistor (TFT) (210) packet
Include grid (212), capacitor plate (213) and source-drain electrode metal layer (214)；The Organic Light Emitting Diode (230) includes anode
Layer (231), pixel confining layer (232), wall (233), organic luminous layer (234) and cathode layer (235)；First metal
Layer (312) is a part of the grid (212), and the second metal layer (313) is one of the capacitor plate (213)
Point, the third metal layer (314) is a part of the source-drain electrode metal layer (214), and the first material layer (321) is institute
State a part of planarization layer (220), the transparency conducting layer (315) is a part of the anode layer (231), described second
Material layer (322) is a part of the pixel confining layer (232), and the third material layer (323) is the wall (233)
A part.
8. display panel according to claim 2, which is characterized in that the main part height is received for 4600 nanometers~5800
Rice.
9. display panel according to claim 2, which is characterized in that the effective height of the anti-overflow structure (300) is
5500~7160 nanometers.
10. display panel according to claim 1, which is characterized in that the display panel is OLED display panel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820096718.9U CN208142184U (en) | 2018-01-19 | 2018-01-19 | Display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820096718.9U CN208142184U (en) | 2018-01-19 | 2018-01-19 | Display panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN208142184U true CN208142184U (en) | 2018-11-23 |
Family
ID=64285041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820096718.9U Active CN208142184U (en) | 2018-01-19 | 2018-01-19 | Display panel |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN208142184U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111430566A (en) * | 2020-03-30 | 2020-07-17 | 武汉华星光电半导体显示技术有限公司 | O L ED display panel and display device |
| WO2020224009A1 (en) * | 2019-05-07 | 2020-11-12 | 武汉华星光电半导体显示技术有限公司 | Display panel, display module and electronic device |
| CN112002737A (en) * | 2020-08-07 | 2020-11-27 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
-
2018
- 2018-01-19 CN CN201820096718.9U patent/CN208142184U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020224009A1 (en) * | 2019-05-07 | 2020-11-12 | 武汉华星光电半导体显示技术有限公司 | Display panel, display module and electronic device |
| CN111430566A (en) * | 2020-03-30 | 2020-07-17 | 武汉华星光电半导体显示技术有限公司 | O L ED display panel and display device |
| CN112002737A (en) * | 2020-08-07 | 2020-11-27 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| CN112002737B (en) * | 2020-08-07 | 2023-05-02 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11849599B2 (en) | Display device having a sealing film including multiple layers | |
| CN107482042B (en) | OLED display substrate, manufacturing method thereof and OLED display device | |
| CN104347673B (en) | Organic light-emitting display device and its manufacturing method | |
| CN110943108B (en) | Folding display panel, manufacturing method thereof and display device | |
| CN208142184U (en) | Display panel | |
| CN108281458A (en) | Flexible OLED display and preparation method thereof | |
| CN104779269B (en) | Oled display device | |
| CN105374946B (en) | A kind of flexible display apparatus and preparation method thereof | |
| CN109546002A (en) | Organic electroluminescent display panel and display device | |
| CN206293441U (en) | Organic EL display panel and display device | |
| CN110265443B (en) | Display panel and display device | |
| CN108428728A (en) | Array substrate and production method, display panel and production method, display device | |
| CN105633304B (en) | The method for packing of oled substrate and OLED encapsulating structures | |
| US20210083225A1 (en) | Display panel and manufacturing method thereof | |
| US20210351376A1 (en) | Oled display panel and fabrication method thereof | |
| WO2016177252A1 (en) | Packaging method of oled device, packaging structure and display apparatus | |
| CN111433915A (en) | Display screen, manufacturing method thereof and display device | |
| CN109473459B (en) | Packaging structure of organic light-emitting diode device and manufacturing method thereof | |
| US20200251681A9 (en) | Film structure, display device and method for fabricating the film structure | |
| WO2020133848A1 (en) | Oled display panel | |
| CN206685388U (en) | A kind of encapsulating structure, display panel and display device | |
| KR100711889B1 (en) | Organic light-emitting display device and manufacturing method thereof | |
| KR20170003298A (en) | Organic light emitting diode display and manufacturing method of the same | |
| KR20150136246A (en) | Organic light emitting display apparatus and manufacturing the same | |
| CN104795429B (en) | Oled display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |