CN208046465U - A kind of modified is double to clamp submodule and modularization multi-level converter - Google Patents
A kind of modified is double to clamp submodule and modularization multi-level converter Download PDFInfo
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- CN208046465U CN208046465U CN201820184334.2U CN201820184334U CN208046465U CN 208046465 U CN208046465 U CN 208046465U CN 201820184334 U CN201820184334 U CN 201820184334U CN 208046465 U CN208046465 U CN 208046465U
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Abstract
The utility model provides a kind of double clamp submodule modularization multi-level converters of modified, the double clamp submodules of modified include the first half-bridge submodule, the second half-bridge submodule, third half-bridge submodule, diode D1, diode D2, diode D3 and switch transistor T 7, it is simple in structure, need device less, it is at low cost；The modularization multi-level converter being made of the double clamp submodules of modified and half-bridge submodule has fault clearance ability, the increased IGBT of average each semi-bridge type submodule and number of diodes are respectively 1/3 and 4/3, economic cost is relatively low, and the IGBT numbers that modified provided by the utility model double clamp submodule any moment are in current path are less, it is lost relatively low, efficiency is higher, relatively low to the resistance to pressure request of submodule capacitor voltage；The utility model can be adapted for the device being made of modularization multi-level converter, including be not limited to flow controller between THE UPFC, line, flexible DC power transmission, flexible direct current distribution.
Description
Technical field
The utility model is related to technical field of direct current power transmission, and in particular to a kind of modified is double to clamp submodule and modularization
Multilevel converter.
Background technology
THE UPFC (Unified Power Flow Controller, UPFC) is that a kind of function is most powerful, special
The superior flexible AC transmission equipment of new generation of property, the low levels topology such as two traditional level, three level cannot meet UPFC
High voltage, powerful demand, modularization multi-level converter (Modular Multilevel Converter, MMC) is in height
Comparative maturity has been developed in pressure field, the MMC-UPFC systems being made of at present MMC and UPFC --- the western looped network in the Nanjing 220kV
The Suzhou aquatic weeds algae creek UPFC, 500kV, the Shanghai UPFC, 220kV UPFC project inputs use, and fault characteristic is also concerned, due to
MMC-UPFC systems still rely on DC bus transimission power, and current conversion station dc-side short-circuit fault not only results in whole system work(
Rate Transmission, IGBT are also possible to overcurrent damage, half-bridge submodule (Half Bridge Submodule, HBSM) cascade MMC
Do not have fault clearance ability, after the shutdown of failure lower switch pipe, current path such as attached drawing 1, La indicates that bridge arm reactance, Rdc are
Resistance, at this time MMC work under diode uncontrollable rectifier pattern, if exchange side does not trip, DC side fault current will be deposited always
MMC can not restart；If exchange side trips, DC side, which is restarted, needs complicated time cooperation, and alternating voltage reconstruct needs longer
Time, MMC stop transport long-time.Existing MMC mostly uses greatly cable power transmission, and DC side breaks down rate compared with conventional overhead line
It is low, but cable cost is higher, and DC Line Fault incidence can only be reduced, failure can not be removed；Separately have on DC line
It disposes dc circuit breaker and removes malfunction approach, but dc circuit breaker is only more perfect in the development of mesolow field of power transmission at present,
High pressure, the development of extra-high voltage field is still insufficient, and additionally deployment dc circuit breaker can bring higher economic cost.For direct current
Side fault characteristic, failure, such as full-bridge submodule (Full Bridge can effectively be removed by introducing Clamp submodule
Submodule, FBSM), double Clamp submodules (Clamp Double Submodule, CDSM) etc. because such failure is clear
Except mode exchange side does not have to tripping, it is only necessary to which a few tens of milliseconds can complete reclosing and DC voltage reconstruct, but can introduce volume
Outer IGBT can bring additional economic cost and loss.
Utility model content
In order to overcome above-mentioned modularization multi-level converter in the prior art not have fault clearance ability, economic cost
High and loss is big insufficient, and a kind of double clamp submodules of modified of the utility model offer, control method and modular multilevel change
Device is flowed, the double clamp submodules of modified include the first half-bridge submodule, the second half-bridge submodule, third half-bridge submodule, two poles
Pipe D1, diode D2, diode D3 and switch transistor T 7, it is simple in structure, need device less, by the double clamp submodule structures of modified
At modularization multi-level converter have fault clearance ability, do not need additional IGBT, economic cost is low and loss is small.
In order to realize that above-mentioned purpose of utility model, the utility model adopt the following technical scheme that：
On the one hand, the utility model provides a kind of modified double clamp submodules, including the first half-bridge submodule, the second half
Bridge submodule, third half-bridge submodule, diode D1, diode D2, diode D3 and switch transistor T 7；
The anode of the diode D1, the anode of diode D2, switch transistor T 7 collector with third half-bridge submodule
The anode of middle storage capacitor C3 connects, and the anode of storage capacitor C1 connects in the cathode of the diode D1 and the first half-bridge submodule
It connects, the cathode of the diode D2 is connect with the anode of storage capacitor C2 in the second half-bridge submodule, the hair of the switch transistor T 7
Emitter-base bandgap grading connects the cathode of the cathode and diode D3 of storage capacitor C2 in the second half-bridge submodule, the sun of the diode D3 simultaneously
Pole is connect with the cathode of storage capacitor C3 in third half-bridge submodule.
The first half-bridge submodule further includes switch transistor T 1 and switch transistor T 2；
The switch transistor T 1 include IGBT1 and with the antiparallel diode D11 of IGBT1；
The switch transistor T 2 include IGBT2 and with the antiparallel diode D12 of IGBT2；
The anode of the collector connection storage capacitor C1 of the IGBT1, emitter connect common point A, the IGBT2's
Collector connects common point A, and emitter connects the cathode of storage capacitor C1.
The second half-bridge submodule further includes switch transistor T 3 and switch transistor T 4；
The switch transistor T 3 include IGBT3 and with the antiparallel diode D21 of IGBT3；
The switch transistor T 4 include IGBT4 and with the antiparallel diode D22 of IGBT4；
The anode of the collector connection storage capacitor C2 of the IGBT3, emitter connect simultaneously IGBT4 collector and
The cathode of storage capacitor C1, the cathode of the emitter connection storage capacitor C2 of the IGBT4.
The third half-bridge submodule further includes switch transistor T 5 and switch transistor T 6；
The switch transistor T 5 include IGBT5 and with the antiparallel diode D31 of IGBT5；
The switch transistor T 6 include IGBT6 and with the antiparallel diode D32 of IGBT6；
The anode of the collector connection storage capacitor C3 of the IGBT5, emitter connect common point B, the IGBT6's
Collector connects common point B, and emitter connects the cathode of storage capacitor C3.
The switch transistor T 7 include IGBT7 and with the antiparallel diode D7 of IGBT7.
The utility model provides a kind of modularization multi-level converter, including three phase elements, the phase element include upper
Bridge arm and lower bridge arm, the upper bridge arm and lower bridge arm mixed with half-bridge submodule by the double clamp submodules of the modified connect and
At.
Compared with the immediate prior art, technical solution provided by the utility model has the advantages that：
The double clamp submodules of modified provided by the utility model include the first half-bridge submodule, the second half-bridge submodule,
Third half-bridge submodule, diode D1, diode D2, diode D3 and switch transistor T 7, it is simple in structure, need device less, at
This is low；
The modular multilevel provided by the utility model being made of the double clamp submodules of modified and half-bridge submodule changes
Stream device has fault clearance ability, does not need additional IGBT, economic cost is low and loss is small；
The double clamp submodules of modified provided by the utility model are compared with semi-bridge type submodule, average each semi-bridge type
The increased IGBT of module and number of diodes are respectively 1/3 and 4/3, and economic cost is relatively low, and provided by the utility model
The IGBT numbers that modified double clamp submodule any moment are in current path are less, and loss is relatively low, and efficiency is higher；
The utility model is provided in technical solution, and after the double clamp submodule lockings of modified, storage capacitor C1, C2, C3 are simultaneously
Connection, equivalent capacity 3C0, equivalent capacity is larger, and under same current, voltage rises slowly, therefore the double clamp submodules of modified
It is relatively low to the resistance to pressure request of submodule capacitor voltage；
The utility model is provided in technical solution, for dc-side short-circuit fault, the double clamp submodules of modified after locking
Alternating voltage is supported while block isolated DC failure, exchange side is not required to trip, and reboot time is shorter, and electrical stability compared with
It is high；
The utility model offer technical solution is wide suitable for range, specifically can be adapted for by modularization multi-level converter
The device of composition, including it is not limited to flow controller between THE UPFC, line, flexible DC power transmission, flexible direct current distribution.
Description of the drawings
Fig. 1 be in the prior art half-bridge sub-module cascade constitute MMC again failure lower switch pipe shutdown after current path
Schematic diagram；
Fig. 2 is the double clamp sub-modular structure figures of modified in the utility model embodiment 1.
Specific implementation mode
The utility model is described in further detail below in conjunction with the accompanying drawings.
Embodiment 1
The utility model embodiment 1 provides a kind of double clamp submodules of modified, and concrete structure is as shown in Fig. 2, the improvement
The double clamp submodules of type include the first half-bridge submodule, the second half-bridge submodule, third half-bridge submodule, diode D1, two poles
Pipe D2, diode D3 and switch transistor T 7；Switch transistor T 7 include IGBT7 and with the antiparallel diode D7 of IGBT7.
Specifically, the anode of diode D1, the anode of diode D2, switch transistor T 7 collector with third half-bridge submodule
The anode of storage capacitor C3 connects in block, and the anode of storage capacitor C1 connects in the cathode of diode D1 and the first half-bridge submodule
It connects, the cathode of diode D2 is connect with the anode of storage capacitor C2 in the second half-bridge submodule, and the emitter of switch transistor T 7 is simultaneously
Connect the cathode of the cathode and diode D3 of storage capacitor C2 in the second half-bridge submodule, anode and the third half-bridge of diode D3
The cathode connection of storage capacitor C3 in submodule.
The first above-mentioned half-bridge submodule further includes switch transistor T 1 and switch transistor T 2 in addition to including storage capacitor C1；
Switch transistor T 1 therein include IGBT1 and with the antiparallel diode D11 of IGBT1；
Switch transistor T 2 therein include IGBT2 and with the antiparallel diode D12 of IGBT2；
Specifically, the anode of the collector connection storage capacitor C1 of IGBT1 therein, emitter connect common point A；
The collector of IGBT2 therein connects common point A, and emitter connects the cathode of storage capacitor C1.
The second above-mentioned half-bridge submodule further includes switch transistor T 3 and switch transistor T 4 in addition to including storage capacitor C2；
Switch transistor T 3 include IGBT3 and with the antiparallel diode D21 of IGBT3；
Switch transistor T 4 include IGBT4 and with the antiparallel diode D22 of IGBT4；
Specifically, the anode of the collector connection storage capacitor C2 of IGBT3, emitter connect the current collection of IGBT4 simultaneously
The cathode of pole and storage capacitor C1, the cathode of the emitter connection storage capacitor C2 of the IGBT4.
Above-mentioned third half-bridge submodule further includes switch transistor T 5 and switch transistor T 6 in addition to including storage capacitor C3；
Switch transistor T 5 include IGBT5 and with the antiparallel diode D31 of IGBT5；
Switch transistor T 6 include IGBT6 and with the antiparallel diode D32 of IGBT6；
Specifically, the anode of the collector connection storage capacitor C3 of IGBT5, emitter connect common point B；IGBT6's
Collector connects common point B, and emitter connects the cathode of storage capacitor C3.
Economic cost and the loss of the double clamp submodules of modified are introduced separately below：
1) in terms of economic cost：
The resistance to pressure request of diode D1 is 2Uc, and the resistance to pressure request of other devices is all Uc, since diode cost is relatively low,
Obviously increasing in cost will not be brought by increasing by three diodes；Diode D1~D3 is not turned on always in normal operation, is not had
There is electric current to flow through, after the double clamp submodule lockings of modified and when current direction is B → A, three tunnels of fault current point are flowed respectively
Through this 3 diodes of diode D1~D3, so the tolerance current requirements of diode D1, diode D2, diode D3 are relatively low.
The double clamp submodules of 1 modified can replace 3 semi-bridge type submodules in output voltage function, and 1 changes
Into the double clamp submodules of type compared with 3 semi-bridge type submodules, 1 IGBT7 is increased, 4 diodes are D1, D2, D3 respectively
And D7.Average each semi-bridge type submodule increases 4/3 diode and 1/3 IGBT.
2) in terms of loss：
2-1) switching loss：
When normal work, IGBT7 is open-minded always, is pressed in identical modulation and without switching loss without switch on-off
Under strategy, the switching of other 6 IGBT is as semi-bridge type submodule, therefore the switch of its switching loss and semi-bridge type submodule damages
It consumes completely the same, does not increase additionally；
2-2) conduction loss：
No electric current flows through in normal operation by diode D1, D2 and D3, so being not turned on loss；IGBT1~
The on-off modes of IGHBT6 in normal operation are consistent with half-bridge, therefore this 6 IGBT will not increase conduction loss；IGBT7 and two
Pole pipe D7 in normal operation under it is constantly on, increased conduction loss mostlys come from IGBT7 and diode D7, according to conducting
The on-state loss of loss calculation mode, IGBT is the integral of forward conduction voltage drop and conducting electric current in an electric current cycle, is increased
On-state loss carry out standardization with capacitance number, average each semi-bridge type submodule conduction loss increases 1/3.
Embodiment 2
The utility model embodiment 2 provides a kind of modularization multi-level converter, including three phase elements, the phase element
Including upper bridge arm and lower bridge arm, the upper bridge arm and lower bridge arm clamp submodule and half-bridge by the modified pair that embodiment 1 provides
Submodule mixing is connected in series, and the modularization multi-level converter that embodiment 2 provides has failure and understands ability.
For convenience of description, each section of apparatus described above is divided into various modules with function or unit describes respectively.
Certainly, each module or the function of unit can be realized in same or multiple softwares or hardware when implementing the application.
It should be understood by those skilled in the art that, embodiments herein can be provided as method, system or computer program
Product.Therefore, complete hardware embodiment, complete software embodiment or reality combining software and hardware aspects can be used in the application
Apply the form of example.Moreover, the application can be used in one or more wherein include computer usable program code computer
The computer program production implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.)
The form of product.
The application is with reference to method, the flow of equipment (system) and computer program product according to the embodiment of the present application
Figure and/or block diagram describe.It should be understood that can be realized by computer program instructions every first-class in flowchart and/or the block diagram
The combination of flow and/or box in journey and/or box and flowchart and/or the block diagram.These computer programs can be provided
Instruct the processor of all-purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices to produce
A raw machine so that the instruction executed by computer or the processor of other programmable data processing devices is generated for real
The device for the function of being specified in present one flow of flow chart or one box of multiple flows and/or block diagram or multiple boxes.
These computer program instructions, which may also be stored in, can guide computer or other programmable data processing devices with spy
Determine in the computer-readable memory that mode works so that instruction generation stored in the computer readable memory includes referring to
Enable the manufacture of device, the command device realize in one flow of flow chart or multiple flows and/or one box of block diagram or
The function of being specified in multiple boxes.
These computer program instructions also can be loaded onto a computer or other programmable data processing device so that count
Series of operation steps are executed on calculation machine or other programmable devices to generate computer implemented processing, in computer or
The instruction executed on other programmable devices is provided for realizing in one flow of flow chart or multiple flows and/or block diagram one
The step of function of being specified in a box or multiple boxes.
Finally it should be noted that：Above example is only to illustrate the technical solution of the utility model rather than limits it
System, those of ordinary skill in the art can still carry out specific embodiment of the present utility model with reference to above-described embodiment
Modification either equivalent replacement these without departing from any modification of the spirit and scope of the utility model or equivalent replacement, in Shen
Within the claims of the utility model that please be pending.
Claims (6)
1. a kind of double clamp submodules of modified, which is characterized in that including the first half-bridge submodule, the second half-bridge submodule, the
Three half-bridge submodules, diode D1, diode D2, diode D3 and switch transistor T 7；
The anode of the diode D1, the anode of diode D2, switch transistor T 7 collector stored up with third half-bridge submodule
The anode connection of energy capacitance C3, the cathode of the diode D1 are connect with the anode of storage capacitor C1 in the first half-bridge submodule,
The cathode of the diode D2 is connect with the anode of storage capacitor C2 in the second half-bridge submodule, the emitter of the switch transistor T 7
Simultaneously connect the second half-bridge submodule in storage capacitor C2 cathode and diode D3 cathode, the anode of the diode D3 with
The cathode connection of storage capacitor C3 in third half-bridge submodule.
2. the double clamp submodules of modified according to claim 1, which is characterized in that the first half-bridge submodule also wraps
Include switch transistor T 1 and switch transistor T 2；
The switch transistor T 1 include IGBT1 and with the antiparallel diode D11 of IGBT1；
The switch transistor T 2 include IGBT2 and with the antiparallel diode D12 of IGBT2；
The anode of the collector connection storage capacitor C1 of the IGBT1, emitter connect common point A, the current collection of the IGBT2
Pole connects common point A, and emitter connects the cathode of storage capacitor C1.
3. the double clamp submodules of modified according to claim 2, which is characterized in that the second half-bridge submodule also wraps
Include switch transistor T 3 and switch transistor T 4；
The switch transistor T 3 include IGBT3 and with the antiparallel diode D21 of IGBT3；
The switch transistor T 4 include IGBT4 and with the antiparallel diode D22 of IGBT4；
The anode of the collector connection storage capacitor C2 of the IGBT3, emitter connect collector and the energy storage of IGBT4 simultaneously
The cathode of capacitance C1, the cathode of the emitter connection storage capacitor C2 of the IGBT4.
4. the double clamp submodules of modified according to claim 3, which is characterized in that the third half-bridge submodule also wraps
Include switch transistor T 5 and switch transistor T 6；
The switch transistor T 5 include IGBT5 and with the antiparallel diode D31 of IGBT5；
The switch transistor T 6 include IGBT6 and with the antiparallel diode D32 of IGBT6；
The anode of the collector connection storage capacitor C3 of the IGBT5, emitter connect common point B, the current collection of the IGBT6
Pole connects common point B, and emitter connects the cathode of storage capacitor C3.
5. the double clamp submodules of modified according to claim 4, which is characterized in that the switch transistor T 7 includes IGBT7
With with the antiparallel diode D7 of IGBT7.
6. a kind of modularization multi-level converter, which is characterized in that including three phase elements, the phase element include upper bridge arm and
Lower bridge arm, the upper bridge arm and lower bridge arm are by the double clamp submodules of any modifieds of claim 1-5 and half-bridge submodule
Block mixing is connected in series.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201820184334.2U CN208046465U (en) | 2018-02-02 | 2018-02-02 | A kind of modified is double to clamp submodule and modularization multi-level converter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201820184334.2U CN208046465U (en) | 2018-02-02 | 2018-02-02 | A kind of modified is double to clamp submodule and modularization multi-level converter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110535359A (en) * | 2019-08-29 | 2019-12-03 | 华北电力大学（保定） | A kind of diode clamp mixing MMC circuit with from equal pressure energy power |
| CN113824344A (en) * | 2021-11-01 | 2021-12-21 | 广东工业大学 | Double-clamping self-blocking self-balancing submodule and modular multilevel converter |
-
2018
- 2018-02-02 CN CN201820184334.2U patent/CN208046465U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110535359A (en) * | 2019-08-29 | 2019-12-03 | 华北电力大学（保定） | A kind of diode clamp mixing MMC circuit with from equal pressure energy power |
| CN113824344A (en) * | 2021-11-01 | 2021-12-21 | 广东工业大学 | Double-clamping self-blocking self-balancing submodule and modular multilevel converter |
| CN113824344B (en) * | 2021-11-01 | 2023-08-04 | 广东工业大学 | Doubly clamped self-blocking self-balancing sub-module and modularized multi-level converter |
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