CN207992389U - A kind of full dynamic aging circuit of diode - Google Patents
A kind of full dynamic aging circuit of diode Download PDFInfo
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- CN207992389U CN207992389U CN201721629442.8U CN201721629442U CN207992389U CN 207992389 U CN207992389 U CN 207992389U CN 201721629442 U CN201721629442 U CN 201721629442U CN 207992389 U CN207992389 U CN 207992389U
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Abstract
The full dynamic aging circuit of a kind of diode provided by the utility model, including aging circuit, power circuit, control circuit, aging circuit includes loading-diode D1, the anode of loading-diode D1 is connect with power supply, the cathode of loading-diode D1 is connect with the cathode of the anode of diode D2 and diode D3 jointly, the cathode of diode D2 is connect with forward current sampling resistor R4, the anode of the diode D3 is connected with current-limiting resistance R2 in turn, reverse leakage current sampling resistor R3, it is connect with control circuit between the diode D2 and forward current sampling resistor R4, it access power circuit and is grounded after the forward current sampling resistor R4 and reverse leakage current sampling resistor R3 parallel connections.Positive aging current is more stable, can smaller by external environment influence.It is just advantageous in the stylish design meeting of high-volume aging.Easy to operate, ageing parameter is more stable.
Description
Technical field
The utility model is related to a kind of full dynamic aging circuits of diode.
Background technology
Ageing is the diode for rejecting hidden danger, or rejecting those has the diode of manufacturing defect, these devices
Failure it is related with working time and voltage and current, without ageing, diode in normal conditions of use can initial failure.
The full dynamic aging of diode is exactly to add half-wave current on a 50Hz sine in the forward direction of diode, in diode reversed plus one
A 50Hz positive waves half-wave voltage is like the half-wave voltage under diode both ends alternating plus sinusoidal upper half-wave current source and sine
Source.The circuit (such as attached drawing 2) of full dynamic aging platform on the market now, wherein D1 is the diode for needing aging, UZIt is positive
Alternating voltage, IzIt is forward current, UrIt is Opposed crossing voltage, IrIt is reverse current, Q1 is positive halfwave rectifier and loads reverse-biased
The thyristor in circuit is disconnected when voltage, R1 is forward current regulation resistance, and R3 is forward current sampling resistor, and R2 is reversed electricity
Sampling resistor is flowed, R4 is reverse flow limiting resistance, and D2 is reversed halfwave rectifier diode.It is designed simply, is gone out in use
Existing 3 points insufficient:(1) cause the setting of forward current to adjust complicated, need regulation resistance R1 and forward voltage UZIt realizes, because
As soon as a setting value is realized to adjust two parameters, so adjusting more complicated；(2) positive half-wave voltage is less than 180 °,
Because there are one cut-in voltages for thyristor Q1 conductings, although very little, UZVoltage it is also very low, so influence it is also bigger；
(3) positive aging current is nor half-sinusoid completely in meaning, is only loaded with a sine at loading-diode both ends
Half-wave voltage, and the C-V characteristic of diode is straight line unlike resistance, it can be the characteristic curve approximation of diode
ForIn formula, IsIt is at room temperature constant for reverse saturation current；U is to be added in diode both end voltage；UT
For the voltage equivalent of temperature, U when temperature-resistantTFor constant, because u is half-sinusoid, I can not possibly be half-sinusoid.
Utility model content
In order to solve the above technical problems, the utility model provides a kind of full dynamic aging circuit of diode.
The utility model is achieved by the following technical programs.
The full dynamic aging circuit of a kind of diode provided by the utility model, including aging circuit, power circuit, control electricity
Road, aging circuit include loading-diode D1, and the anode of loading-diode D1 is connect with power supply, the cathode of loading-diode D1
It is connect jointly with the cathode of the anode of diode D2 and diode D3, cathode and the forward current sampling resistor R4 of diode D2 connect
It connects, the anode of the diode D3 is connected with current-limiting resistance R2, reverse leakage current sampling resistor R3, the diode D2 in turn
It is connect with control circuit between forward current sampling resistor R4, the sampling resistor R4 and reverse leakage current sampling resistor R3 are simultaneously
Power circuit is accessed after connection and is grounded.
The power circuit includes forward dc power supply UZWith Opposed crossing power supply Ur, forward dc power supply UZIt is handed over reversed
Galvanic electricity source UrThe two poles of the earth it is in parallel after access aging circuit.
The forward dc power supply UZIncluding positive circuit UZ1With anode circuit UZ2, the anode circuit UZ1With switching tube
The collector of Q1 connects, and the grid and emitter of switching tube Q1 are connect with the two-wire line of voltage signal Uge respectively, switching tube Q1
Emitter access aging circuit and loading-diode anode connect, forward dc power supply UZCathode traces UZ2With resistance R4
Connection.
The Opposed crossing power supply UrThe two poles of the earth connect respectively with current-limiting resistance R1 and rectifier diode D4, resistance R1 connects
Enter the anode of loading-diode, rectifier diode D4 is connect with resistance R3.
The control circuit includes metal-oxide-semiconductor Q2, the drain electrode of metal-oxide-semiconductor Q2 connect with diode D2 and the source electrode of metal-oxide-semiconductor Q2 with
Forward current sampling resistor R4 is connected with the negative terminal of computing circuit U1, and the grid of metal-oxide-semiconductor Q2 is connect with the output of computing circuit U1,
The anode connection voltage signal Iz_Wavc of computing circuit U1.
The voltage signal Iz_Wavc is the voltage signal of setting electric current.
The switching tube Q1 is IGBT.
The beneficial effects of the utility model are：Using direct current as forward voltage UZ, it is only necessary to set Iz_Wavc
Signal is adjusting voltage UZIt can complete diodes age.Using IGBT as switching tube, UZDirect current is changed into from alternating voltage
Voltage, as long as signal Uge is the square wave that duty ratio is 50%, Q1 outputs are exactly the square wave that duty ratio is 50%.Present aging two
The forward current control of pole pipe D1 is completed by metal-oxide-semiconductor Q1, is exactly as long as signal Iz_Wavc is electric current on half-sinusoid D1
Sinusoidal half.Positive aging current is more stable, can smaller by external environment influence.Can just have in the stylish design of high-volume aging excellent
Gesture.Easy to operate, ageing parameter is more stable.
Description of the drawings
Fig. 1 is the structural schematic diagram of the utility model；
Fig. 2 is former aging circuit structural schematic diagram；
Specific implementation mode
Be described further below the technical solution of the utility model, but claimed range be not limited to it is described.
A kind of full dynamic aging circuit of diode as shown in Figure 1, including aging circuit, power circuit, control circuit, always
It includes loading-diode D1 to change circuit, and the anode of loading-diode D1 is connect with power supply, the cathode of loading-diode D1 jointly with
The anode of diode D2 is connected with the cathode of diode D3, and the cathode of diode D2 is connect with forward current sampling resistor R4, institute
The anode for stating diode D3 is connected with current-limiting resistance R2, reverse leakage current sampling resistor R3, the diode D2 and forward direction in turn
It is connect with control circuit between current sampling resistor R4, it is described to adopt forward current sampling resistor R4 and reverse leakage current sampling resistor
Power circuit is accessed after R3 parallel connections and is grounded.
The power circuit includes forward dc power supply UZWith Opposed crossing power supply Ur, forward dc power supply UZIt is handed over reversed
Galvanic electricity source UrThe two poles of the earth it is in parallel after access aging circuit.
The forward dc power supply UZIncluding positive circuit UZ1With anode circuit UZ2, the anode circuit UZ1With switching tube
The collector of Q1 connects, and the grid and emitter of switching tube Q1 are connect with the two-wire line of voltage signal Uge respectively, switching tube Q1
Emitter access aging circuit and loading-diode anode connect, forward dc power supply UZCathode traces UZ2With forward direction electricity
Flow sampling resistor R4 connections.
The Opposed crossing power supply UrThe two poles of the earth connect respectively with current-limiting resistance R1 and rectifier diode D4, resistance R1 connects
Enter the anode of loading-diode, rectifier diode D4 is connect with resistance R3.
The control circuit includes metal-oxide-semiconductor Q2, the drain electrode of metal-oxide-semiconductor Q2 connect with diode D2 and the source electrode of metal-oxide-semiconductor Q2 with
Forward current sampling resistor R4 is connected with the negative terminal of computing circuit U1, and the grid of metal-oxide-semiconductor Q2 is connect with the output of computing circuit U1,
The anode connection voltage signal Iz_Wavc of computing circuit U1.
The voltage signal Iz_Wavc is the voltage signal of setting electric current.
The switching tube Q1 is IGBT.
Q1 is the IGBT for switch forward voltage, and R1 is current-limiting resistance, and D1 is the diode for wanting aging, and the effect of D2 is
It prevents from reversing current through, the effect of D3 is to prevent forward current from passing through, and U1 (computing circuit) is forward current IzAmplifier is controlled,
Q2 is current control metal-oxide-semiconductor, and R4 is forward current sampling resistor, and R2 is reverse flow limiting resistance, and R3 is reverse leakage current sampling electricity
Resistance, D4 halfwave rectifier diodes, UZIt is the forward dc voltage of diode, IzIt is the forward current of diode, UrIt is diode
Opposed crossing voltage, IrIt is the reverse leakage current of diode, Uge is the voltage signal for driving IGBT, and Iz_Wavc is setting electric current
Voltage signal.Uge and Iz_Wavc is with the same phase of frequency, Uge and Iz_Wavc and UrIt is with same frequency and reversed-phase, is all 50Hz.
The size of Iz_Wavc is first set when in use.Adjusting forward dc voltage UZ, make forward current IzWith setting phase
Together.Adjusting backward voltage Ur, reach the value of requirement.Work as UrFor negative voltage when, at this time Q1 be close, reverse current
U can only be returned to by D4 → R3 → R2 → D3 → D1 → R1r.When Q1 is opened, U at this timerFor positive voltage, forward current can pass through
Q1 → D1 → D2 → Q2 → R4 returns to UZ, the electric current meeting very little of R1 is flowed through, because there is the metering function of R1.It thereby realizes complete
Dynamic aging.Forward voltage U after the completion of agingZ, backward voltage Ur, setting electric current Iz_Wavc be all transferred to minimum, it is convenient
Next time is using.
Positive aging current is more stable in a new design, can smaller by external environment influence.It is stylish in high-volume aging
Design can be just advantageous.Easy to operate, ageing parameter is more stable.
Claims (7)
1. a kind of full dynamic aging circuit of diode, it is characterised in that：Including aging circuit, power circuit, control circuit, aging
Circuit includes loading-diode D1, and the anode of loading-diode D1 is connect with power supply, and the cathode of loading-diode D1 is jointly with two
The anode of pole pipe D2 is connected with the cathode of diode D3, and the cathode of diode D2 is connect with forward current sampling resistor R4, described
The anode of diode D3 is connected with current-limiting resistance R2, reverse leakage current sampling resistor R3, the diode D2 and forward direction electricity in turn
It is connect with control circuit between stream sampling resistor R4, the forward current sampling resistor R4 and reverse leakage current sampling resistor R3 are simultaneously
Power circuit is accessed after connection and is grounded.
2. the full dynamic aging circuit of diode as described in claim 1, it is characterised in that：The power circuit includes positive straight
Galvanic electricity source UZWith Opposed crossing power supply Ur, forward dc power supply UZWith Opposed crossing power supply UrThe two poles of the earth it is in parallel after access aging
Circuit.
3. the full dynamic aging circuit of diode as claimed in claim 2, it is characterised in that：The forward dc power supply UZIncluding
Positive circuit UZ1With anode circuit UZ2, the anode circuit UZ1Connect with the collector of switching tube Q1, the grid of switching tube Q1 and
Emitter is connect with the two-wire line of voltage signal Uge respectively, emitter access aging circuit and two poles of load of switching tube Q1
The anode connection of pipe, forward dc power supply UZCathode traces UZ2It is connect with resistance R4.
4. the full dynamic aging circuit of diode as claimed in claim 2, it is characterised in that：The Opposed crossing power supply UrTwo
Pole is connect with current-limiting resistance R1 and rectifier diode D4 respectively, the anode of resistance R1 access loading-diodes, rectifier diode D4
It is connect with resistance R3.
5. the full dynamic aging circuit of diode as described in claim 1, it is characterised in that：The control circuit includes metal-oxide-semiconductor
The drain electrode of Q2, metal-oxide-semiconductor Q2 are connect with diode D2 and the source electrode of metal-oxide-semiconductor Q2 and forward current sampling resistor R4 and computing circuit
The negative terminal of U1 connects, and the grid of metal-oxide-semiconductor Q2 is connect with the output of computing circuit U1, and the anode of computing circuit U1 connects voltage signal
Iz_Wavc。
6. the full dynamic aging circuit of diode as claimed in claim 5, it is characterised in that：The voltage signal Iz_Wavc is
The voltage signal of setting electric current.
7. the full dynamic aging circuit of diode as claimed in claim 3, it is characterised in that：The switching tube Q1 is IGBT.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721629442.8U CN207992389U (en) | 2017-11-29 | 2017-11-29 | A kind of full dynamic aging circuit of diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721629442.8U CN207992389U (en) | 2017-11-29 | 2017-11-29 | A kind of full dynamic aging circuit of diode |
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| CN207992389U true CN207992389U (en) | 2018-10-19 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109765475A (en) * | 2019-03-08 | 2019-05-17 | 重庆平伟实业股份有限公司 | The reverse-biased pilot system of high temperature and humidity and test method for semiconductor devices |
| CN109901040A (en) * | 2019-04-08 | 2019-06-18 | 西安交通大学 | A kind of high-pressure high-power thyristor reverse recovery current test macro and test method |
| CN112014712A (en) * | 2020-09-24 | 2020-12-01 | 中国振华集团永光电子有限公司（国营第八七三厂） | Full-dynamic aging method and device for full-digital diode |
| CN114325282A (en) * | 2021-12-23 | 2022-04-12 | 中国电子科技集团公司第十八研究所 | Space solar cell bypass diode testing arrangement |
-
2017
- 2017-11-29 CN CN201721629442.8U patent/CN207992389U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109765475A (en) * | 2019-03-08 | 2019-05-17 | 重庆平伟实业股份有限公司 | The reverse-biased pilot system of high temperature and humidity and test method for semiconductor devices |
| CN109901040A (en) * | 2019-04-08 | 2019-06-18 | 西安交通大学 | A kind of high-pressure high-power thyristor reverse recovery current test macro and test method |
| CN112014712A (en) * | 2020-09-24 | 2020-12-01 | 中国振华集团永光电子有限公司（国营第八七三厂） | Full-dynamic aging method and device for full-digital diode |
| CN112014712B (en) * | 2020-09-24 | 2023-03-31 | 中国振华集团永光电子有限公司（国营第八七三厂） | Full-dynamic aging method and device for full-digital diode |
| CN114325282A (en) * | 2021-12-23 | 2022-04-12 | 中国电子科技集团公司第十八研究所 | Space solar cell bypass diode testing arrangement |
| CN114325282B (en) * | 2021-12-23 | 2024-01-05 | 中电科蓝天科技股份有限公司 | Space solar cell bypass diode testing device |
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