CN207896943U - Wideband impedance matching module and device comprising it - Google Patents
Wideband impedance matching module and device comprising it Download PDFInfo
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- CN207896943U CN207896943U CN201820333594.1U CN201820333594U CN207896943U CN 207896943 U CN207896943 U CN 207896943U CN 201820333594 U CN201820333594 U CN 201820333594U CN 207896943 U CN207896943 U CN 207896943U
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Abstract
The utility model embodiment is related to RF impedance matching technique field, discloses a kind of wideband impedance matching module and the device comprising it.The wideband impedance matching module includes：Impedance matching network, M RF switch and the impedance matching device being connected with each RF switch；M is the natural number more than or equal to 1；The M RF switch and the impedance matching device being connected with each RF switch are connect with the impedance matching network；Each RF switch is used to connection control unit, and under the control of the control unit accesses or disconnect the impedance matching network impedance matching device being connected with each RF switch, to adjust the matching impedance of the wideband impedance matching module.By using the utility model embodiment so that matching impedance can be adjusted according to actual needs, to make it have certain versatility, be conducive to the development efficiency for improving radio frequency front-end product.
Description
Technical field
The utility model embodiment is related to RF impedance matching technique field, more particularly to a kind of wideband impedance matching module
And include its device.
Background technology
With the fast development of the communication technology, requirement of the people to communication speed is higher and higher.However as the upper of frequency
System-level design difficulty caused by liter and complex communication system, proposes radio frequency chip new challenge.For example, in 5G
In the radio frequency chip design of sub-6GHz, since it has the characteristics that wideband, it is desirable to be able to carry out wideband matching to radio-frequency match
Out.In order to realize the matching between high Low ESR, by passive inductance and capacitance matched design can be carried out, and broadband
Width is mainly by way of multistage network.Two-stage shown in a to Fig. 1 c is please referred to Fig.1 to match, in order to realize broader bandwidth,
The matching that more stages can be used please refers to three-level matching shown in Fig. 2.Meanwhile for different needs, low pass, height may be used
The mode of logical or low pass high pass mixing is realized.
Inventor has found that at least there are the following problems in the prior art：The matching way of multistage LC is now commonplace makes
Mode, especially in the radio frequency front-end product of wireless communication.However, due to the ghost effect of component itself, result in
Its quality factor (Q) is poor, therefore multistage LC matchings can cause higher loss.Simultaneously as the size of component is larger, because
This multistage matching can also occupy larger area, bring challenges to the miniaturization of radio frequency design.In addition, once matching network is set
Meter sizing, the adjust automatically that matching can not be also needed according to application scenarios in the product.Please refer to shown in Fig. 3 be directed to
The GaAs HBT of high band (2.3GHz-2.7GHz) LTE (Long Term Evolution, long term evolution, abbreviation LTE) applications
(HeterojunctionBipolar Transistor, Heterojunction Bipolar Transistors, abbreviation HBT) Designing power amplifier,
Which employs two-stage matching networks.Since frequency is higher and bandwidth is higher, matching uses the matching network of two-stage low pass.So
And since inductance is poor in the quality factor of high band, only the Insertion Loss of matching network is just close to 1dB (decibel) left and right.Together
When, which lacks flexibility, can not be adjusted in practical applications to circuit.
Utility model content
The first purpose of the utility model embodiment is to provide a kind of wideband impedance matching module and the dress comprising it
It sets so that matching impedance can be adjusted according to actual needs, to make it have certain versatility, be conducive to improve and be penetrated
The development efficiency of frequency front-end product.
In order to solve the above technical problems, the embodiment of the utility model provides a kind of wideband impedance matching module, use
In formation impedance matching network, including：M RF switch and the impedance matching device being connected with each RF switch；M be more than
Or the natural number equal to 1；Each RF switch is used to connection control unit, and will be with institute under the control of described control unit
It states the connected impedance matching device access of each RF switch or disconnects the impedance matching network, to adjust the wideband impedance
The matching impedance of matching module.
The utility model embodiment further provides a kind of wideband impedance-matching devices, including：Control unit and such as
The upper wideband impedance matching module；Described control unit and each RF switch phase in the wideband impedance matching module
Even；Described control unit is configured to generate multiple control signal, the multiple control signal point according to current Frequency point
The break-make of each RF switch Yong Yu not be controlled, so that the wideband impedance matching module provides the current Frequency point institute
The matching impedance needed.
In terms of existing technologies, wideband impedance matching module includes that multiple radio frequencies are opened to the utility model embodiment
It closes, and the impedance matching device being connected with each RF switch, and each RF switch is also connected with control unit, and in control unit
Control under by the impedance matching device being connected with each RF switch access or disconnect wideband impedance matching module impedance
Distribution network, since the matching impedance of entire wideband impedance matching module can be with the impedance matching device being connected with each RF switch
Change with the connection state of impedance matching network and change so that the matching impedance of wideband impedance matching module can root
It is adjusted according to matched Frequency point is actually needed so that wideband impedance matching module has very strong versatility so that exploitation
Personnel can according to actual needs neatly configure wideband impedance matching module, and then be conducive to improve radio-frequency front-end production
The development efficiency of product.
In addition, the impedance matching device being connected with each RF switch is capacitor element, wherein each RF switch point
It does not connect to form switching capacity branch with an at least capacitance, each switching capacity branch circuit parallel connection forms adjustable condenser group.
In addition, the adjustable condenser group includes the first adjustable groups and the second adjustable groups；The wideband impedance matching mould
Block further includes the first inductance；The output end of first inductance is connected with the first end of first adjustable groups；Described first can
The second end of tune group is connected with the first end of second adjustable groups, the second end ground connection of second adjustable groups, and described first
The first end of the second end of adjustable groups and second adjustable groups is additionally operable to the input terminal of connection load, to pass through the first electricity
Sense, the first adjustable groups and the second adjustable groups can form level-one impedance matching circuit, at the same by adjust the first adjustable groups and
Second adjustable groups make the level-one impedance matching circuit have the impedance matching performance of two level impedance matching circuit, not only contribute to
Insertion Loss, and the use due to reducing inductance are reduced, the quality factor variation under high frequency condition due to inductance is also can avoid and draws
The penalty risen.
In addition, the wideband impedance matching module further includes the second inductance and the first capacitance；Second inductance it is defeated
Outlet connects the input terminal of first inductance；The first end of first capacitance is connected with the output end of second inductance,
The second end of first capacitance is grounded, and so as to form two-stage impedance matching circuit, and the two-stage impedance matching circuit has
The performance of standby three-level impedance matching circuit, to advantageously reduce loss.
In addition, the wideband impedance matching module further includes the second capacitance；The first end of second capacitance and described the
The input terminal of one inductance connects, the second end ground connection of second capacitance, so as to form π type two-stage impedance matching circuits, and
And the two-stage impedance matching circuit has the matching performance of three-level impedance matching circuit, advantageously reduces loss.
In addition, the adjustable condenser group includes third adjustable groups and the 4th adjustable groups；The wideband impedance matching mould
Block includes third inductance and the 4th inductance；The third inductance, the 4th inductance and third adjustable groups are sequentially connected in series；Described
The first end of four adjustable groups is connected with the output end of the third inductance, the second end ground connection of the 4th adjustable groups, so as to
Two-stage T-type impedance matching circuit is formed, and the two-stage impedance matching circuit has the matching performance of three-level impedance matching circuit,
Advantageously reduce loss.
In addition, the M RF switch is made to form RF switch chip of chip technology, so as to save matching
Circuit area advantageously reduces product design complexity.
In addition, the chip technology include it is following any one：Silicon SOI on insulator and counterfeit modulation doping hetero-junctions
Field-effect transistor PMENT, so that the performance and economy of product are more preferably.
In addition, the capacitance being connected with the RF switch is formed on the RF switch chip, since capacitance is integrated in
It is obviously reduced compared to passive capacitance component parasitic parameter on RF switch chip, so being conducive to promote properties of product.
Description of the drawings
One or more embodiments are illustrated by the picture in corresponding attached drawing, these exemplary theorys
The bright restriction not constituted to embodiment, the element with same reference numbers label is expressed as similar element in attached drawing, removes
Non- to have special statement, composition does not limit the figure in attached drawing.
The conspectus of Fig. 1 a to Fig. 1 c two-stage impedance matching circuits in the prior art；
Fig. 2 is a kind of conspectus of three-level impedance matching circuit in the prior art；
Fig. 3 is the conspectus of the power amplifier with two-stage impedance matching circuit in the prior art；
Fig. 4 is a kind of conspectus according to the utility model first embodiment wideband impedance matching module；
Fig. 5 is the conspectus of the power amplifier with wideband impedance matching module shown in Fig. 4；
Fig. 6 is a kind of conspectus according to the utility model second embodiment wideband impedance matching module；
Fig. 7 is a kind of conspectus according to the utility model third embodiment wideband impedance matching module；
Fig. 8 is a kind of conspectus according to the 4th embodiment wideband impedance matching module of the utility model.
Specific implementation mode
To keep the purpose, technical scheme and advantage of the utility model embodiment clearer, below in conjunction with attached drawing to this
Each embodiment of utility model is explained in detail.However, it will be understood by those skilled in the art that in this practicality
In novel each embodiment, in order to make the reader understand this application better, many technical details are proposed.But even if do not have
These technical details and various changes and modifications based on the following respective embodiments can also realize that the application is claimed
Technical solution.
The first embodiment of the utility model is related to a kind of wideband impedance matching module, is used to form impedance matching net
Network, the impedance matching being suitable under the various application scenarios such as active and passive, for example (,) it is power amplifier in active device, low
Noise amplifier and frequency mixer etc., filter and Antenna Impedance Matching in passive device etc., it should be understood that this embodiment party
Formula is not specifically limited its application scenarios.The wideband impedance matching module includes：It M RF switch and is opened with each radio frequency
Connected impedance matching device is closed, M is the natural number more than or equal to 1, and each RF switch is used to connection control unit, and
The impedance matching device being connected with each RF switch is accessed or is disconnected under the control of the control unit impedance matching network, with
Adjust the matching impedance of wideband impedance matching module.The utility model embodiment in terms of existing technologies, wideband impedance
Matching module includes multiple RF switches, and the impedance matching device being connected with each RF switch, and each RF switch also connects
Control unit is connect, and the impedance matching device being connected with each RF switch is accessed or disconnected under the control of the control unit width
The impedance matching network of frequency impedance matching module, due to entire wideband impedance matching module matching impedance can with each radio frequency
It switchs the change of the connection state of connected impedance matching device and impedance matching network and changes, so that wideband impedance
Matching impedance with module matched Frequency point can be adjusted according to actual needs so that wideband impedance matching module has
Very strong versatility so that developer can according to actual needs neatly configure wideband impedance matching module, into
And be conducive to improve the development efficiency of radio frequency front-end product.It is thin to the realization of the wideband impedance matching module of present embodiment below
Section is specifically described, and the following contents only for convenience of the realization details provided is understood, not implements the necessary of this programme.
In present embodiment, the impedance matching device that is connected with each RF switch is capacitor element, and each RF switch
It connects to form switching capacity branch with an at least capacitance respectively, each switching capacity branch circuit parallel connection forms adjustable condenser group.One
In a little examples, the impedance matching device being connected with RF switch may be inductance component, for example, will be as shown in Fig. 1 b or 1c
Two-stage impedance matching circuit in inductance connect with RF switch after be grounded, present embodiment is for being connected with RF switch
The type of impedance matching device is not specifically limited.
In practical applications, above-mentioned adjustable condenser group can be divided into the first adjustable groups and the second adjustable groups, and can
Level-one impedance is built by other impedance matching devices in the first adjustable groups, the second adjustable groups and wideband impedance matching module
Match circuit.Specifically, referring to Fig. 4, adjustable condenser group includes the first adjustable groups 11 and the second adjustable groups 12.First can
Tune group 11 and the second adjustable groups 12 include multiple switch capacitive branch, and each switching capacity branch includes：Impedance matching
Capacitance CsAnd with the CsConcatenated RF switch K.In present embodiment, wideband impedance matching module 1 for example further includes the first electricity
Feel L1, the input terminal of first inductance L1 is connected with the output end of signal source, the output end and the first adjustable groups of the first inductance L1
The first end of L1 is connected, and the second end of the first adjustable groups 11 is connected with the first end of the second adjustable groups 12, the second adjustable groups 12
Second end is grounded, and the first end of the second end of the first adjustable groups 11 and the second adjustable groups 12 is additionally operable to the input of connection load
End.In this way, the first inductance L1, the first adjustable groups 11 and the second adjustable groups 12 can form level-one impedance matching circuit.It needs
Illustrate, the first adjustable groups 11 can be identical with the structure of the second adjustable groups 12, i.e. the switch electricity of the first adjustable groups 11
Quantity and the structure for holding branch are identical as the quantity of the switching capacity branch of the second adjustable groups 12 and structure.In some examples
In, the first adjustable groups can also use different structures from the second adjustable groups, for example, the switching capacity branch of the first adjustable groups 11
Quantity it is different from the second adjustable groups 12, present embodiment is not specifically limited this.It should be noted that the first adjustable groups 11
And the quantity of the second switching capacity branch in adjustable groups 12 is more, then the first adjustable groups 11 and the second adjustable groups 12 can
The impedance adjustable range of offer is bigger, to be advantageously implemented more Frequency points impedance Optimized Matching, present embodiment pair
It is not specifically limited in the quantity of the switching capacity branch of the first adjustable groups and the second adjustable groups.
In present embodiment, 11 equivalent inductance in series of the first inductance L1 and the first adjustable groups, by adjusting first
Adjustable groups 11 access to the i.e. adjustable equivalent inductance of the capacitor element of impedance matching network, and the second adjustable groups 12 be also can power transformation
Hold, therefore, the impedance matching of different frequency point can be realized by adjusting equivalent inductance and the second adjustable groups 12, so that
The Frequency point of design can reach more preferably matches, with can the Frequency point of Optimized Matching increase, also achieve width
Frequently matched effect.For example, in the prior art, 3 ohm to 50 ohm of impedance matching circuit is generally matched using multistage,
Such as it is first matched to medium impedance, then it is matched to final required impedance, existing multistage matching has that loss is high.And it adopts
With the wideband impedance matching module of present embodiment, then can be changed by adjusting the first adjustable groups 11 and the second adjustable groups 12
The impedance of equivalent inductance and the variable capacitance being connect with equivalent inductance, the arbitrary resistance being directly realized by between 3 ohm to 50 ohm
Anti- matching, i.e. the level-one impedance matching circuit that the wideband impedance matching module of present embodiment is realized can replace existing two
Grade impedance matching circuit, also, matching performance more preferably and loss it is lower.
Please refer to the work(shown in fig. 5 for applying the aforementioned wideband impedance matching module 1 with level-one impedance matching circuit
The conspectus of rate amplifier, wherein C12 is decoupling capacitor, and L11 (RF_Choke) is radio-frequency choke, and BJT is NPN type
Radio-frequency power amplifier tube, C11 are capacitance, and the realization method of rf power amplifier circuit is ripe for those skilled in the art
Know, details are not described herein again.
In addition, in some instances, adjustable condenser group can also substitute existing impedance matching electricity as a whole
A capacitor element in road.
In present embodiment, high-speed silicon PIN diode and GaAs PHENT may be used in RF switch
(Pseudomorphic High Electron Mobility Transistor, counterfeit modulation doping hetero junction field effect crystal
Pipe, abbreviation PHEMT) etc. mode well known to those skilled in the art realize, realization method of the present embodiment for RF switch
It is not specifically limited.
Further, in one example, all RF switches in wideband impedance matching module can also be used core
Blade technolgy is realized, i.e., all RF switches is produced in RF switch chip.Wherein, chip technology may be used following arbitrary
It is a kind of：Silicon SOI (Silicon-On-Insulator, abbreviation SOI) on insulator and PMENT, present embodiment is for core
Blade technolgy is not specifically limited.By the way that multiple RF switches in wideband impedance matching module are fabricated to RF switch chip,
So that match circuit area smaller, cost be lower and performance more preferably.
Further, the capacitance being connected with RF switch can also be formed on RF switch chip, i.e., hinder wideband
Adjustable condenser group in anti-matching module is produced on RF switch chip, such as the first adjustable groups and second are adjustable
Each device in group is produced on RF switch chip.Due to be integrated in the parasitic parameter of the capacitance on RF switch chip with
Smaller is compared in passive capacitor element, it is possible to further promote impedance matching performance.
Present embodiment compared with prior art, can be changed by the break-make of the RF switch in wideband impedance matching module
Become the impedance matching device of access impedance matching network, so as to adjust the matching impedance of wideband impedance matching module, therefore
The wideband impedance matching module of present embodiment can be adjusted according to concrete application scene, and then can improve product development
The flexibility of design improves development efficiency.Simultaneously because the matching impedance of wideband impedance matching module can with flexible modulation, to
The matching of each Frequency point can be optimized, and can realize the impedance of existing more stages by the impedance matching circuit of less grade
The wideband matching effect that match circuit can be only achieved, so as to further decrease loss, and can be low-loss same in drop
When obtain broader bandwidth.In addition, due to complete in the adjustable condenser group in the wideband impedance matching module of present embodiment
Portion's device is both formed on RF switch chip, therefore can be further reduced the area of match circuit, is reduced radio frequency products and is set
The complexity of meter.
The second embodiment of the utility model is related to a kind of wideband impedance matching module.Second embodiment is real with first
It is roughly the same to apply mode, is in place of the main distinction：In the first embodiment, wideband impedance matching module can be used as a kind of base
In the restructural level-one impedance matching circuit structure of RF switch.And in the utility model second embodiment, wideband impedance
Matching module can be used as a kind of restructural two level impedance matching circuit, to enrich the embodiment of the utility model.
Referring to Fig. 6, the wideband impedance matching module of present embodiment includes multiple RF switch K and is opened with each radio frequency
Close connected impedance matching device (the i.e. impedance matching capacitances C of Ks).Wherein, each impedance matching capacitances CsIt connects with each RF switch K
Switching capacity branch is formed, each switching capacity branch circuit parallel connection forms adjustable condenser group.Specifically, adjustable condenser group includes the
One adjustable groups 11 and the second adjustable groups 12.Wideband impedance matching module further includes：First inductance L1, the second inductance L2 and
One capacitance C1, wherein the second inductance L2, the first inductance L1 and the first adjustable groups 11 are sequentially connected in series, the first capacitance C1's
First end connects the output end of the second inductance L2, the second end ground connection of the first capacitance C1, the first end connection of the second adjustable groups 11
The second end of first adjustable groups 11, the second end ground connection of the second adjustable groups 12, the second end of the first adjustable groups 11 and second can
The first end of tune group 12 is all connected with the input terminal of load.Each RF switch K is all connected with control unit (not shown), and single in control
The impedance matching capacitances C being connected with each RF switch K under the control of membersAccess disconnects impedance matching network, to adjust
The matching impedance of wideband impedance matching module.
In present embodiment, the first order impedance of the second inductance L2 and the first capacitance C1 formation wideband impedance matching modules
Match circuit, the first inductance L1, the first adjustable groups 11 and the second adjustable groups 12 form second level impedance matching circuit.Due to
The alternative existing two-stage impedance matching circuit of two level impedance matching circuit, therefore, the wideband impedance matching mould of present embodiment
Although block is in form two level impedance matching circuit, the wideband of existing three-level impedance matching circuit can be substantially realized
Impedance matching performance, such as can reach the matching capacity of three-level impedance matching circuit as shown in Figure 2.
Present embodiment compared with prior art, provides a kind of restructural wideband impedance matching circuit of two-stage, reachable
To the matching effect of existing three-level impedance matching circuit, and performance is more preferably and loss is lower.
The third embodiment of the utility model is related to a kind of wideband impedance matching module.Third embodiment provides one
The kind a kind of two level impedance matching circuit arranged side by side with second embodiment, to further enrich the embodiment party of the utility model
Formula.
Referring to Fig. 7, the wideband impedance matching module of present embodiment includes multiple RF switch K and is opened with each radio frequency
Close the connected impedance matching devices (i.e. impedance matching capacitances Cs) of K.Wherein, each impedance matching capacitances Cs and each RF switch K goes here and there
Connection forms switching capacity branch, and each switching capacity branch circuit parallel connection forms adjustable condenser group.Specifically, adjustable condenser group includes
Third adjustable groups 13 and the second adjustable groups 14.Wideband impedance matching module further includes：Third inductance L13 and the 4th inductance
L4.Third inductance L3, the 4th inductance L4 and third adjustable groups 13 are sequentially connected in series, first end and the third electricity of the 4th adjustable groups 14
The output end for feeling L3 is connected, the second end ground connection of the 4th adjustable groups 14.Each RF switch K is used to connection control unit, and (figure is not
Show), and by the impedance matching capacitances Cs accesses being connected with each RF switch K or disconnect impedance under the control of the control unit
Distribution network, to adjust the matching impedance of wideband impedance matching module.
In present embodiment, third inductance L3, the 4th inductance L4, third adjustable groups 13 and the 4th adjustable groups 14 form one
The kind restructural T-type impedance matching circuit of two-stage, the alternative existing three-level impedance matching circuit of the T-type impedance matching circuit, example
The matching of three-level impedance matching circuit as shown in Figure 2 such as can be achieved.
Present embodiment compared with prior art, provides a kind of restructural T-type wideband impedance matching circuit of two-stage, can
Reach the matching effect of existing three-level impedance matching circuit, and performance is more preferably and loss is lower.
4th embodiment of the utility model is related to a kind of wideband impedance matching module.4th embodiment provides one
The kind a kind of two level impedance matching circuit arranged side by side with second and third embodiment, to further enrich the utility model
Embodiment.
Referring to Fig. 8, the wideband impedance matching module of present embodiment includes multiple RF switch K and is opened with each radio frequency
Close connected impedance matching device (the i.e. impedance matching capacitances C of Ks).Wherein, each impedance matching capacitances CsIt connects with each RF switch K
Switching capacity branch is formed, each switching capacity branch circuit parallel connection forms adjustable condenser group.Specifically, adjustable condenser group includes the
One adjustable groups 11 and the second adjustable groups 12.Wideband impedance matching module further includes：First inductance L1 and the second capacitance C2.Its
In, the first end of the second capacitance C2 is connect with the input terminal of the first inductance L1, the second end ground connection of the second capacitance C2, the first inductance
The output end of L1 is connect with the first of the first adjustable groups 11, the first end of the second end of the first adjustable groups 11 and the second adjustable groups 12
The first end of connection, the second end ground connection of the second adjustable groups 12, the second end of the first adjustable groups 11 and the second adjustable groups 12 is equal
Connect the input terminal of load.Each RF switch K is used to connection control unit (not shown), and under the control of the control unit will
The impedance matching capacitances C being connected with each RF switch KsAccess disconnects impedance matching network, to adjust wideband impedance matching
The matching impedance of module.
In present embodiment, the second capacitance C2, the first inductance L1, the first adjustable groups 11 and the second adjustable groups 12 form
A kind of restructural two-stage π type impedance matching circuits, the alternative three-level impedance matching as shown in Figure 2 of the π type impedance matching circuits
Circuit.
It should be noted that in practical applications, those skilled in the art can also be by adjustable condenser group and other resistances
Anti- matching device (i.e. capacitance and/or inductance) flexible combination, so that the wideband impedance matching module of present embodiment is realized
More stages impedance matching, the utility model are not limited the concrete structure of wideband impedance matching module.
Present embodiment compared with prior art, provides a kind of restructural π molded breadths frequency impedance matching circuit of two-stage, can
Reach the matching effect of existing three-level impedance matching circuit, and performance is more preferably and loss is lower.
The 5th embodiment of the utility model is related to a kind of wideband impedance-matching device, including：Control unit and such as the
One, the wideband impedance matching module described in second, third or the 4th embodiment.Control unit and wideband impedance matching module
In each RF switch be connected, control unit is configured to generate multiple control signal, multiple controls according to current Frequency point
Signal processed is respectively used to control the break-make of each RF switch, so that wideband impedance matching module provides current Frequency point institute
The matching impedance needed.Specifically, control unit is, for example, the baseband chip in radio-frequency electronics, and present embodiment is for control
The type of unit is not specifically limited.
In some instances, some or all of RF switch in wideband impedance matching module and with each RF switch
Forming the capacitor element of switching capacity branch can be formed on a radio frequency chip with control unit, so as to further
Integrated level is improved, radio frequency products design complexities are advantageously reduced.
Compared with prior art, the break-make of RF switch is controlled by control unit can change access resistance to present embodiment
The impedance matching device of anti-matching network, so as to adjust matching impedance, therefore the wideband impedance matching dress of present embodiment
Setting can be adjusted according to concrete application scene, and then can improve the flexibility of product development and design, improve development efficiency.
Simultaneously because the matching impedance of wideband impedance-matching device can with flexible modulation, so as to optimize the matching of each Frequency point,
And the wideband matching effect that the match circuit of existing more stages can be only achieved can be realized by the match circuit of less grade, to
Loss can be further decreased, and broader bandwidth can be obtained reducing the while of being lost.
It is noted that each module involved in present embodiment is logic module, and in practical applications, one
A logic unit can be a physical unit, can also be a part for a physical unit, can also be with multiple physics lists
The combination of member is realized.In addition, in order to protrude the innovative part of the utility model, it will not be with this reality of solution in present embodiment
With it is novel proposed the technical issues of the less close unit of relationship introduce, but this does not indicate in present embodiment and it is not present
Its unit.
It will be understood by those skilled in the art that the respective embodiments described above are to realize the specific implementation of the utility model
Example, and in practical applications, can to it, various changes can be made in the form and details, without departing from the spirit of the utility model
And range.
Claims (10)
1. a kind of wideband impedance matching module, is used to form impedance matching network, which is characterized in that including：M RF switch with
And the impedance matching device being connected with each RF switch；M is the natural number more than or equal to 1；
Each RF switch is used to connection control unit, and will be with each RF switch phase under the control of described control unit
Impedance matching device even accesses or disconnects the impedance matching network, to adjust the matching of the wideband impedance matching module
Impedance.
2. wideband impedance matching module according to claim 1, which is characterized in that the impedance being connected with each RF switch
It is capacitor element with device, wherein each RF switch connects to form switching capacity branch with an at least capacitance respectively, respectively
Switching capacity branch circuit parallel connection forms adjustable condenser group.
3. wideband impedance matching module according to claim 2, which is characterized in that the adjustable condenser group includes first
Adjustable groups and the second adjustable groups；
The wideband impedance matching module further includes the first inductance；
The output end of first inductance is connected with the first end of first adjustable groups；
The second end of first adjustable groups is connected with the first end of second adjustable groups, the second end of second adjustable groups
The first end of ground connection, the second end of first adjustable groups and second adjustable groups is additionally operable to the input terminal of connection load.
4. wideband impedance matching module according to claim 3, which is characterized in that the wideband impedance matching module is also wrapped
Include the second inductance and the first capacitance；
The output end of second inductance connects the input terminal of first inductance；
The first end of first capacitance is connected with the output end of second inductance, the second end ground connection of first capacitance.
5. wideband impedance matching module according to claim 3, which is characterized in that the wideband impedance matching module is also wrapped
Include the second capacitance；
The first end of second capacitance is connect with the input terminal of first inductance, the second end ground connection of second capacitance.
6. wideband impedance matching module according to claim 2, which is characterized in that the adjustable condenser group includes third
Adjustable groups and the 4th adjustable groups；
The wideband impedance matching module includes third inductance and the 4th inductance；
The third inductance, the 4th inductance and third adjustable groups are sequentially connected in series；
The first end of 4th adjustable groups is connected with the output end of the third inductance, the second termination of the 4th adjustable groups
Ground.
7. the wideband impedance matching module according to any one of claim 2 to 6, which is characterized in that the M radio frequency is opened
Pass is made to form RF switch chip of chip technology.
8. wideband impedance matching module according to claim 7, which is characterized in that the chip technology includes following arbitrary
It is a kind of：Silicon SOI on insulator and counterfeit modulation doping heterojunction field effect transistor PMENT.
9. wideband impedance matching module according to claim 7, which is characterized in that the capacitance being connected with the RF switch
It is formed on the RF switch chip.
10. a kind of wideband impedance-matching device, which is characterized in that including：It is any in control unit and such as claim 1 to 9
Wideband impedance matching module described in；
Described control unit is connected with each RF switch in the wideband impedance matching module；
Described control unit is configured to generate multiple control signal, the multiple control signal point according to current Frequency point
The break-make of each RF switch Yong Yu not be controlled, so that the wideband impedance matching module provides the current Frequency point institute
The matching impedance needed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820333594.1U CN207896943U (en) | 2018-03-12 | 2018-03-12 | Wideband impedance matching module and device comprising it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820333594.1U CN207896943U (en) | 2018-03-12 | 2018-03-12 | Wideband impedance matching module and device comprising it |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108233886A (en) * | 2018-03-12 | 2018-06-29 | 锐石创芯（深圳）科技有限公司 | Wideband impedance matching module and the device for including it |
| CN110867719A (en) * | 2019-11-27 | 2020-03-06 | 苏州创鑫激光科技有限公司 | Method for controlling Q-switching circuit, circuit board, Q-switching system and eliminating parasitic oscillation |
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2018
- 2018-03-12 CN CN201820333594.1U patent/CN207896943U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108233886A (en) * | 2018-03-12 | 2018-06-29 | 锐石创芯（深圳）科技有限公司 | Wideband impedance matching module and the device for including it |
| CN110867719A (en) * | 2019-11-27 | 2020-03-06 | 苏州创鑫激光科技有限公司 | Method for controlling Q-switching circuit, circuit board, Q-switching system and eliminating parasitic oscillation |
| CN110867719B (en) * | 2019-11-27 | 2020-12-08 | 苏州创鑫激光科技有限公司 | Method for controlling Q-switching circuit, circuit board, Q-switching system and eliminating parasitic oscillation |
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Address after: 518000 room 2001, building 3, Shenzhen new generation industrial park, 136 Zhongkang Road, Meidu community, Meilin street, Futian District, Shenzhen City, Guangdong Province Patentee after: Ruishi Chuangxin (Shenzhen) Technology Co.,Ltd. Address before: 518035 Room 203, building e, Shenzhen International Innovation Center, No. 1006, Shennan Avenue, Huafu street, Futian District, Shenzhen, Guangdong Province Patentee before: AN ADVANCED RF POWER AMPLIFIER AND COMMUNICATION DEVICE |