CN207894829U - The complete ultrafast imaging detector of light solid of image intensifying type - Google Patents
The complete ultrafast imaging detector of light solid of image intensifying type Download PDFInfo
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- CN207894829U CN207894829U CN201820203457.6U CN201820203457U CN207894829U CN 207894829 U CN207894829 U CN 207894829U CN 201820203457 U CN201820203457 U CN 201820203457U CN 207894829 U CN207894829 U CN 207894829U
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- ultrafast
- semiconductor
- light solid
- image intensifying
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- 238000003384 imaging method Methods 0.000 title claims abstract description 28
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- Solid State Image Pick-Up Elements (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Abstract
The utility model belongs to ultrafast diagnostic techniques field, and in particular to a kind of complete ultrafast imaging detector of light solid of image intensifying type.The detector includes shell and Vacuum Package photocathode inside the housing and the ultrafast detection chip of semiconductor；Input window is arranged in one end of shell, and output window is arranged in the other end of shell, and the photocathode is located at close to one end of input window, and the ultrafast detection chip of semiconductor is located at close to one end of output window；A piece of or multi-disc microchannel plate is provided between the photocathode and the ultrafast detection chip of semiconductor.The utility model solves the low technical problem of the existing ultrafast diagnostic techniques detectivity of full light solid.Combine the low-light image intensifying technology based on microchannel plate and the complete ultrafast imaging technique of light solid based on semicoductor radiating optical effect, by the high time resolution characteristic of the multiplication function and the complete ultrafast detection chip of light solid of microchannel plate, the high time resolution imaging under low light condition may be implemented.
Description
Technical field
The utility model belongs to ultrafast diagnostic techniques field, and in particular to a kind of ultrafast imaging spy of the full light solid of image intensifying type
Survey device.
Background technology
The development of ultrafast diagnostic techniques is to the energy, material, biology, optical physics, photochemistry, strong optical physics and high-energy physics etc.
The research in field has extremely important scientific meaning, is the necessary condition that the mankind expand cognitive domain, obtain original innovation.With
The instrument and equipment that ultrafast diagnostic techniques is associated is the indispensable research tool and means of front line science and hard-core technology field.
Traditional high speed diagnostic device includes high speed image intensifying CCD, high speed gate framing camera, travelling wave gating framing camera, striped phase
Machine etc..Wherein, one-dimensional picosecond, the time resolution of even femtosecond magnitude may be implemented in streak camera；Travelling wave gating type framing camera,
Pulse gate is charged by microstrip line, tens to hundred picoseconds of time resolution may be implemented, but X-ray can only be responded, is limited
The application of the technology；High speed gate framing camera realizes the super of nanosecond order by loading the ultra-fast electrical pulse on cathode
The short time for exposure, but it is limited by the limitation of CCD pixel charge readout time, it often can only achieve tens under the conditions of complete differentiate
Frame reading speed per second.
The complete ultrafast diagnostic techniques of light solid is a kind of completely new based on the ultrafast variation characteristic of semiconductor refractive index, can be realized
Several picoseconds even time resolution of hundred femtoseconds.Ultrahigh time resolution can be realized by being combined with ordered spaces framing technology when full light
More frame imagings.But the shortcomings that technology is that detectivity is low, and by taking InP materials as an example, a length of 532nm of signal light-wave is
When system time resolution reaches 1ps, the corresponding signal light power of sensitivity of system is 1.3 × 105W/cm2.Letter needed for detection system
Number optical energy density is far above the letter that Planar laser induced fluorescence (PLIF) in the diagnosis of supersonic combustion flow field can be provided
Number luminous intensity, therefore significantly limit the application field of the complete ultrafast diagnostic techniques of light solid.
Utility model content
In order to solve the problems, such as that the existing ultrafast diagnostic techniques detectivity of full light solid is low, the utility model provides one
The kind complete ultrafast imaging detector of light solid of image intensifying type, the electron multiplication ability and semiconductor for having played microchannel plate (MCP) are visited
The advantage for surveying the ultrafast time response of chip, realizes the ultrafast imaging under low light condition.
The technical solution of the utility model is：A kind of complete ultrafast imaging detector of light solid of image intensifying type, it is special
Place is：Including shell and Vacuum Package photocathode inside the housing and the ultrafast detection chip of semiconductor；Shell
Input window is arranged in one end, and output window is arranged in the other end of shell, and the photocathode is located at close to one end of input window,
The ultrafast detection chip of semiconductor is located at close to one end of output window；The photocathode and the ultrafast detection chip of semiconductor
Between be provided with a piece of or multi-disc microchannel plate.
Further, the ultrafast detection chip of above-mentioned semiconductor includes the modulation light set gradually along input signal transmission direction
Grid, conductive layer, semiconductor response unit and anti-reflection film.
Further, above-mentioned modulated grating is the metal grating for being 50-100lp/mm in the period.
Further, the thickness of above-mentioned conductive layer is 180-220nm.
Further, the carrier lifetime of above-mentioned semiconductor response unit is less than 30ps.
Further, the thickness of above-mentioned semiconductor response unit is 4.8-5.2 μm.
Preferably, the vacuum gap of 0.1-0.2mm, the microchannel are provided between above-mentioned photocathode and microchannel plate
The vacuum gap of 0.5-1.0mm is provided between plate and the ultrafast detection chip of semiconductor.
Preferably, the quantity of the microchannel plate between above-mentioned photocathode and the ultrafast detection chip of semiconductor is two panels.
Further, the inner surface of above-mentioned input window is provided with layer of conductive film, and the photocathode, which is made in, leads
On conductive film.
Further, above-mentioned shell is glassy metal shell or ceramic and metal package.
The beneficial effects of the utility model are：
1, the complete ultrafast imaging detector of light solid of the utility model image intensifying type is combined with the low-light based on microchannel plate
Image intensifying technology and the complete ultrafast imaging technique of light solid based on semicoductor radiating optical effect, pass through the multiplication work(of microchannel plate
The high time resolution imaging under low light condition can may be implemented with the high time resolution characteristic of the complete ultrafast detection chip of light solid,
It can be applied to the fields such as fluorescence imaging and fluorescence lifetime imaging.
2, the spectral response range of the utility model can be determined that response wave band is easily controllable by photocathode.
3, the photocathode of the utility model and MCP, MCP and semiconductor probe chip use double close-up structure, not only subtract
Disperse and the transition time for having lacked electronics, space charge effect is decreased, image quality is improved.
4, the utility model core component is in vacuum, few by external interference, and stability is good.
Description of the drawings
Fig. 1 is the structural schematic diagram of the complete ultrafast imaging detector of light solid of the utility model image intensifying type.
Fig. 2 is the preferred embodiment principle schematic of the complete ultrafast imaging detector of light solid of the utility model image intensifying type.
Wherein, reference numeral is：1- input windows, 2- photocathodes, 3- microchannel plates, 4- output windows, 5- semiconductors
Ultrafast detection chip, 6- shells, 7- conductive films, the first vacuum gaps of 8-, the second vacuum gaps of 9-, 10- modulated gratings, 11-
Conductive layer, 12- semiconductor response units, 13- anti-reflection films, 14- phase gratings, 15- incoming signal light, 16- emission of cathode electronics,
17- high energy electron pulses, 18- detecting optical pulses, 19- diffraction lights.
Specific implementation mode
Referring to Fig. 1, the utility model is a kind of complete ultrafast imaging detector of light solid of image intensifying type, preferred embodiment
Structure includes the ultrafast detection chip of the photocathode 2 and semiconductor of shell 6 and Vacuum Package inside shell 65；Shell 6
Input window 1 is arranged in one end, and output window 4 is arranged in the other end of shell 6.Photocathode 2 is located at one close to input window 1
End, the ultrafast detection chip 5 of semiconductor are located at close to one end of output window 4；Photocathode 2 and the ultrafast detection chip of semiconductor 5
Between be provided with a piece of or multi-disc microchannel plate 3.
MgF can be used according to the material of signal light wave band Response to selection, UV signal light in input window 12Or GaF2, can
Pyrex can be used in light-exposed wave band.The thickness of input window 1 is advisable in 3~5mm.The inner surface of input window 1 is provided with one
Layer conductive film 7, for supplementing electronics for photocathode 2；Aluminium or silver specifically can be used in conductive film 7, and thickness is in 100nm or so
It is advisable.Photocathode 2 is made on conductive film 7, and different cathode materials responds the signal light of different-waveband；As double alkali are cloudy
Pole can respond the signal light of 300-650nm wave bands.
The first vacuum gap 8 being arranged between photocathode 2 and microchannel plate 3 is preferred with 0.1-0.2mm, and when work loads
The positive voltage of 200V.Microchannel plate 3 uses planar structure, can be selected one or more pieces microchannel plates (with two according to gain requirement
Piece is preferred).
Microchannel plate 3 uses planar structure, one or more pieces microchannel plates can be selected according to gain requirement.It is micro- when work
The voltage of 800-1000V is loaded between the input of channel plate, output face.
The second vacuum gap 9 being arranged between microchannel plate 3 and the ultrafast detection chip of semiconductor 5 is preferred with 0.5-1.0mm.
The positive voltage of 4-8kV is loaded when work therebetween.
Shell 6 is preferred using ceramic and metal package, and High-Temperature Mo-manganese method manufacture craft can be used；In addition, shell 6 can also
Using glassy metal shell.
Referring to Fig. 2, the ultrafast detection chip of semiconductor 5 can specifically include the tune set gradually along input signal transmission direction
Grating 10, conductive layer 11, semiconductor response unit 12 and anti-reflection film 13 processed.
Anti-reflection film 13 is designed for the detection optical wavelength of detector.
The semiconductor super fast response material (such as GaAs) of low-temperature epitaxy growth, this material can be used in semiconductor response unit 12
There is material ultrafast Carrier recombination rate, nonequilibrium carrier lifetime can reach picosecond magnitude (preferably smaller than 30ps).Outside
The thickness of the semiconductor response unit 12 of epitaxial growth is 5 μm or so (can be specifically 4.8-5.2 μm).One layer is plated in material surface
Anti-reflection film 13, and then hot melt adhesive removes the substrate of semiconductor super fast response material in 4 inner surface of output window,
In the conductive layer 11 of material surface plating last layer 200nm or so, and modulated grating 10 is made on conductive layer 11.
It is the metal grating of 50-100lp/mm that modulated grating 10, which can select the period, and thickness is more than 800nm, for adjusting
System is by the electron beam after the multiplication of microchannel plate 3 so that part electronics is blocked in except semiconductor response unit 12, enters to inject half
The high energy electron of conductor response unit 12 can form phase grating 14.
It is the aluminium film of 100-200nm that conductive layer 11, which can specifically select thickness,.
The basic functional principle of the complete ultrafast imaging detector of light solid of the present embodiment image intensifying type is：
The ultrafast signal light 15 of objective emission is converged to through optical system on photocathode 2, is emitted by photocathode 2 ultrashort
Photoelectronic pulse 16, into having in the microchannel of microchannel plate 3 at certain inclination angle, electronics doubles wherein, and gain mainly takes
Certainly in the operating voltage on MCP.It is ultrafast to be incident on semiconductor for high energy electron pulse 17 after by the multiplication of microchannel 3 and electric field acceleration
In detection chip 5, the modulated grating 10 on chip is modulated high energy electron pulse 17, and part electronics is blocked in semiconductor
Other than response unit 12, enters to inject the high energy electron inside semiconductor response unit 12 and more non-equilibrium loads are gone out by collision excitation
Stream, to form instantaneous phase grating 14, the load of phase grating 14 duration and semiconductor inside semi-conducting material
Flow that the sub- service life is related, the diffracted intensity of phase grating 14 is related with incident electron intensity.Signal read when, detecting optical pulses 18 from
Output window 4 is incident, and by output window 4, anti-reflection film 13, semiconductor response unit 12, it is anti-finally to press former road by conductive layer 11
It is emitted back towards and, while carrying signal light intensity information in the diffraction light 19 of phase grating 14.
Claims (10)
1. a kind of complete ultrafast imaging detector of light solid of image intensifying type, it is characterised in that：Outside including shell and Vacuum Package
The ultrafast detection chip of photocathode and semiconductor inside shell；Input window, the other end setting of shell is arranged in one end of shell
Output window, the photocathode are located at close to one end of input window, and the ultrafast detection chip of semiconductor is located at close to defeated
Go out one end of window；A piece of or multi-disc microchannel plate is provided between the photocathode and the ultrafast detection chip of semiconductor.
2. the complete ultrafast imaging detector of light solid of image intensifying type according to claim 1, it is characterised in that：The semiconductor
Ultrafast detection chip include the modulated grating set gradually along input signal transmission direction, conductive layer, semiconductor response unit and
Anti-reflection film.
3. the complete ultrafast imaging detector of light solid of image intensifying type according to claim 2, it is characterised in that：The modulation light
Grid are the metal gratings for being 50-100lp/mm in the period.
4. the complete ultrafast imaging detector of light solid of image intensifying type according to claim 3, it is characterised in that：The conductive layer
Thickness be 180-220nm.
5. the complete ultrafast imaging detector of light solid of image intensifying type according to claim 4, it is characterised in that：The semiconductor
The carrier lifetime of response unit is less than 30ps.
6. the complete ultrafast imaging detector of light solid of image intensifying type according to claim 5, it is characterised in that：The semiconductor
The thickness of response unit is 4.8-5.2 μm.
7. according to any complete ultrafast imaging detector of light solid of image intensifying type in claim 1-6, it is characterised in that：Institute
State the vacuum gap that 0.1-0.2mm is provided between photocathode and microchannel plate, the microchannel plate and the ultrafast spy of semiconductor
The vacuum gap of 0.5-1.0mm is provided between survey chip.
8. according to any complete ultrafast imaging detector of light solid of image intensifying type in claim 1-6, it is characterised in that：Institute
The quantity for stating the microchannel plate between photocathode and the ultrafast detection chip of semiconductor is two panels.
9. the complete ultrafast imaging detector of light solid of image intensifying type according to claim 8, it is characterised in that：The input window
The inner surface of mouth is provided with layer of conductive film, and the photocathode is made on conductive film.
10. the complete ultrafast imaging detector of light solid of image intensifying type according to claim 8, it is characterised in that：The shell
For glassy metal shell or ceramic and metal package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820203457.6U CN207894829U (en) | 2018-02-02 | 2018-02-02 | The complete ultrafast imaging detector of light solid of image intensifying type |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820203457.6U CN207894829U (en) | 2018-02-02 | 2018-02-02 | The complete ultrafast imaging detector of light solid of image intensifying type |
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| Publication Number | Publication Date |
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| CN207894829U true CN207894829U (en) | 2018-09-21 |
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| CN201820203457.6U Withdrawn - After Issue CN207894829U (en) | 2018-02-02 | 2018-02-02 | The complete ultrafast imaging detector of light solid of image intensifying type |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108254349A (en) * | 2018-02-02 | 2018-07-06 | 中国科学院西安光学精密机械研究所 | The complete ultrafast imaging detector of light solid of image intensifying type |
-
2018
- 2018-02-02 CN CN201820203457.6U patent/CN207894829U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108254349A (en) * | 2018-02-02 | 2018-07-06 | 中国科学院西安光学精密机械研究所 | The complete ultrafast imaging detector of light solid of image intensifying type |
| CN108254349B (en) * | 2018-02-02 | 2024-04-05 | 中国科学院西安光学精密机械研究所 | Image enhancement type all-optical solid ultrafast imaging detector |
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Granted publication date: 20180921 Effective date of abandoning: 20240405 |
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