CN207850916U - A kind of double detection systems of Terahertz - Google Patents
A kind of double detection systems of Terahertz Download PDFInfo
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- CN207850916U CN207850916U CN201820183965.2U CN201820183965U CN207850916U CN 207850916 U CN207850916 U CN 207850916U CN 201820183965 U CN201820183965 U CN 201820183965U CN 207850916 U CN207850916 U CN 207850916U
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Abstract
The utility model discloses a kind of double detection systems of Terahertz, including：800nm light beam splitter, 800nm light reflection mirrors, Terahertz beam splitter, terahertz reflector, the first lens, the second lens, the first silicon chip, the second silicon chip, zinc telluridse crystal, quarter wave plate, bias voltage circuit, optical filter, photomultiplier, lock-in amplifier, prism, balanced detector and computer.The double detection systems of Terahertz provided by the utility model, by electro optic sampling technology and gaseous plasma Detection Techniques set to integrally, electro-optic crystal selects zinc telluridse (ZnTe), can two kinds of detection modes of free switching, or detected simultaneously using two ways, multiple choices mode is provided, it flexibly uses, and over ride any one single detection system, has not only saved cost, and system compact, integrability, convenient for commercialization.It can meet more people's demands, enhance the flexibility of test, be widely used in testing field.
Description
Technical field
The utility model is related to field of detecting, the specially double detection systems of Terahertz.
Background technology
THz wave is located at infrared between microwave, has low photon energy, high penetrability, high bandwidth and high
The special natures such as time and space coherence are a frequency ranges for having very much researching value but being not yet fully developed,
Using covering scientific research, Industrial quality control, national security, environmental monitoring and medical diagnosis and treatment, Terahertz section
Skill is a very important forward position crossing domain, and one is provided newly to scientific and technical innovation, the national economic development and national security
Opportunity.
The critical issue of the development of Terahertz science and technology is THz source and Terahertz detection technique.Wherein Terahertz
Detection is divided into coherent detection and non-coherent detection, and non-coherent detection technology is normally based on photo-thermal effect and photon effect, due to
Non-coherent detection can not detect THz wave intensity and phase therefore coherent detection method it is extremely heavy in research and application
It wants, coherent detection is broadly divided into photoconductive antenna sampling, free space electro-optic sampling, is based on gas plasma detection of gas side
Method.
Photoconductive sampling technique has the shortcomings that photo-generated carrier service life, mobility, breakdown electric field, antenna structure；Electric light
Sampling technique overcomes the limitation in photo-generated carrier service life in photoconductive sampling technique, has faster response speed, higher
Sensitivity and resolution ratio, signal-to-noise ratio higher, and since electro-optic crystal technology of preparing is quite ripe, but electro optic sampling technology by
Limit is limited with the intrinsic phonon absorption of electro-optic crystal, and in the case of wider terahertz emission, the spectrum width that different crystal detects is different,
And when Terahertz is very strong, the Terahertz detected using this method can deform；For gas plasma gas detection method,
It can detect the bandwidth of ultra-wide, superpower field, the frequency discrimination of super superior sensitivity of detection (heterodyne method) and superelevation
Rate.But the disadvantage is that：Probe portion apply spacing be several millimeters, the HVB high voltage bias system of nearly 3kv/cm, increase system tune
Difficulty is saved, and signal-to-noise ratio does not have electro optic sampling technology high.
To sum up, it is necessary to be improved for the technology.
Utility model content
In order to solve the above-mentioned technical problem, the purpose of this utility model is to provide a kind of double detection systems of Terahertz.
Technical solution used by the utility model is：
The utility model provides a kind of double detection systems of Terahertz, including：800nm light beam splitter, 800nm light reflection mirrors,
Terahertz beam splitter, terahertz reflector, the first lens, the second lens, the first silicon chip, the second silicon chip, zinc telluridse crystal, 1/4
Wave plate, bias voltage circuit, optical filter, photomultiplier, lock-in amplifier, prism, balanced detector and computer；Wherein, institute
State 800nm light beam splitter, 800nm light reflection mirrors, Terahertz beam splitter, terahertz reflector, the first silicon chip, the second silicon chip difference
It is parallel and placed at 45 degree of angles with horizontal plane, and THz wave passes through the Terahertz beam splitter, wherein a branch of reach first
Silicon chip is simultaneously transmitted to the first lens, and another beam is re-transmitted to the by the terahertz reflector and reflexing to the second silicon chip
Two lens；800nm light is after the 800nm light beam splitter, and wherein light beam reaches the second silicon chip and reflexes to second again
Lens, another light beam reaches 800nm light reflection mirrors and reflexes to the first silicon chip, and reflexes to the first lens again；The biased electrical
One end of volt circuit is connect with the first lens, and the other end is connect with optical filter；One end of the photomultiplier connects with optical filter
It connects, the other end of the photomultiplier is connect with computer；Second lens are connect with zinc telluridse crystal, and the zinc telluridse is brilliant
Body is also connected by one end of quarter wave plate and prism, and the other end of the prism is connect with balanced detector, the balance detection
One end of device and lock-in amplifier connects, and the other end of the lock-in amplifier is connect with computer.
As the improvement of the technical solution, the 800nm light passes through the focal point positioned at the first lens with THz wave
Laser second harmonic is generated after bias voltage circuit effect.
As the improvement of the technical solution, the prism will detect light and be divided into mutually perpendicular two components and be incident to flat
In weighing apparatus detector.
Further, first silicon chip, the second silicon chip material be silicon that purity reaches 99%.
Further, the prism is to hold Lars prism.
Further, the thickness of the zinc telluridse crystal is 1mm.
Further, the model SR830 of the lock-in amplifier.
The utility model has the beneficial effects that：The double detection systems of Terahertz provided by the utility model, by electro optic sampling skill
Art selects zinc telluridse (ZnTe) with gaseous plasma Detection Techniques set to one, electro-optic crystal, can two kinds of spies of free switching
Survey pattern, or detected simultaneously using two ways, provides multiple choices mode, flexibly use, and over ride any one list
A detection system has not only saved cost, and system compact, integrability, convenient for commercialization.It can meet more people's need
It asks, enhances the flexibility of test.
Description of the drawings
Specific embodiment of the present utility model is described further below in conjunction with the accompanying drawings：
Fig. 1 is the schematic diagram of one embodiment of the utility model.
Specific implementation mode
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase
Mutually combination.
Referring to Fig.1, the utility model provides a kind of double detection systems of Terahertz, including：800nm light beam splitter, 800nm light
Speculum, Terahertz beam splitter, terahertz reflector, the first lens, the second lens, the first silicon chip, the second silicon chip, zinc telluridse are brilliant
Body, quarter wave plate, bias voltage circuit, optical filter, photomultiplier, lock-in amplifier, prism, balanced detector and computer；Its
In, the 800nm light beam splitter, 800nm light reflection mirrors, Terahertz beam splitter, terahertz reflector, the first silicon chip, the second silicon
Piece difference is parallel and is placed at 45 degree of angles with horizontal plane, and THz wave passes through the Terahertz beam splitter, wherein a branch of arrive
Up to the first silicon chip and the first lens are transmitted to, another beam is by the terahertz reflector and reflexes to the second silicon chip, passes again
Transport to the second lens；800nm light is after the 800nm light beam splitter, and wherein light beam reaches the second silicon chip and again secondary reflection
To the second lens, another light beam reaches 800nm light reflection mirrors and reflexes to the first silicon chip, and reflexes to the first lens again；It is described
One end of bias voltage circuit is connect with the first lens, and the other end is connect with optical filter；One end of the photomultiplier and filter
Mating plate connects, and the other end of the photomultiplier is connect with computer；Second lens are connect with zinc telluridse crystal, the tellurium
Change zinc crystal also to connect by one end of quarter wave plate and prism, the other end of the prism is connect with balanced detector, described flat
One end of weighing apparatus detector and lock-in amplifier connects, and the other end of the lock-in amplifier is connect with computer.
As the improvement of the technical solution, the 800nm light passes through the focal point positioned at the first lens with THz wave
Laser second harmonic is generated after bias voltage circuit effect.
As the improvement of the technical solution, terahertz light and detection light pass through zinc telluridse crystal simultaneously, quarter wave plate and hold drawing
After this prism, become the unequal S light of light intensity and P light.
As the improvement of the technical solution, the prism will detect light and be divided into mutually perpendicular two components and be incident to flat
In weighing apparatus detector.
Further, first silicon chip, the second silicon chip material be the silicon of high-purity, such as purity reaches 99%.
Further, the prism is to hold Lars prism.
Further, the thickness of the zinc telluridse crystal is 1mm.
Further, the model SR830 of the lock-in amplifier.
As a specific embodiment：Laser wavelength 800nm that this programme uses, pulsewidth 35fs, repetition rate are
1KHz generates Terahertz and Terahertz is divided into two beams by Terahertz beam splitter, first wherein a branch of arrival pure silicon piece (the first silicon
Piece), another beam terahertz light passes through terahertz reflector (second silicon chip) at another pure silicon piece.
The detection light of 800nm also passes through beam splitter and is divided into two beams, a branch of after transmitting mirror, with first at the first silicon chip
Road terahertz light overlaps, and the first silicon chip can reflect 800n light by Terahertz.Generated by the first lens focus to air etc.
Gas ions, and apply the HVB high voltage bias of alternately variation in focal point, under bias voltage effect, 800nm laser and terahertz light
Laser second harmonic will be generated；The laser of 800nm is filtered by optical filter again；Photomultiplier is recycled to detect two
The strength signal of subharmonic, you can to obtain Terahertz shape information by computer software etc..The branch can detect ultra-wide
Bandwidth, the THz wave of superpower field.
In addition all the way, the light of Terahertz and 800nm are at the second silicon chip and beam, by the second lens focus to ZnTe crystal
On (thickness 1mm), and Terahertz electric field and light polarization are parallel to [110] direction and are orientated on ZnTe crystal, the light of linear polarization
When pulse and terahertz pulse are propagated in ZnTe crystal, it is small that field causes birefringence that the index ellipsoid of direct impulse can be made to occur
Variation, detection light becoming elliptically polarized light by quarter wave plate.Lars prism (Wollaston) is held detection light point
It is incident in balanced detector at mutually perpendicular two components.Balanced detector measures the strong of two vertical components of direct impulse
Degree is poor.Signal is amplified by lock-in amplifier (model SR830), terahertz signal is read by computer software.
The double detection systems of Terahertz that this programme provides, integrated height more economical compared to existing single system can be certainly
By selecting optimal detection mode, meets the needs of more testing.
The double detection systems of Terahertz provided by the utility model, by electro optic sampling technology and gaseous plasma Detection Techniques
Gather one, electro-optic crystal selects zinc telluridse (ZnTe), can two kinds of detection modes of free switching, or use two ways simultaneously
Detection, provides multiple choices mode, flexibly uses, and over ride any one single detection system, has not only saved cost,
And system compact, integrability, convenient for commercialization.It can meet more people's demands, enhance the flexibility of test.
It is to be illustrated to the preferable implementation of the utility model, but the invention is not limited to the reality above
Example is applied, those skilled in the art can also make various equivalent changes without departing from the spirit of the present invention
Shape or replacement, these equivalent deformations or replacement are all contained in the application claim limited range.
Claims (7)
1. a kind of double detection systems of Terahertz, which is characterized in that including：800nm light beam splitter, 800nm light reflection mirrors, Terahertz
Beam splitter, terahertz reflector, the first lens, the second lens, the first silicon chip, the second silicon chip, zinc telluridse crystal, quarter wave plate, partially
Set potential circuit, optical filter, photomultiplier, lock-in amplifier, prism, balanced detector and computer；Wherein, the 800nm
Light beam splitter, 800nm light reflection mirrors, Terahertz beam splitter, terahertz reflector, the first silicon chip, the second silicon chip difference it is parallel and
It is placed at 45 degree of angles with horizontal plane, and THz wave passes through the Terahertz beam splitter, wherein the first silicon chip of a branch of arrival is simultaneously
The first lens are transmitted to, another beam is by the terahertz reflector and reflexes to the second silicon chip, is re-transmitted to the second lens；
800nm light is after the 800nm light beam splitter, and wherein light beam reaches the second silicon chip and reflexes to the second lens again, separately
Light beam reaches 800nm light reflection mirrors and reflexes to the first silicon chip, and reflexes to the first lens again；The bias voltage circuit
One end is connect with the first lens, and the other end is connect with optical filter；One end of the photomultiplier is connect with optical filter, the light
The other end of electric multiplier tube is connect with computer；Second lens are connect with zinc telluridse crystal, and the zinc telluridse crystal also passes through
One end of quarter wave plate and prism connects, and the other end of the prism is connect with balanced detector, the balanced detector and locking phase
One end of amplifier connects, and the other end of the lock-in amplifier is connect with computer.
2. the double detection systems of Terahertz according to claim 1, it is characterised in that：The 800nm light is passed through with THz wave
Laser second harmonic is generated after crossing the bias voltage circuit effect of the focal point positioned at the first lens.
3. the double detection systems of Terahertz according to claim 2, it is characterised in that：The prism is divided into light is detected mutually
Vertical two components are simultaneously incident in balanced detector.
4. the double detection systems of Terahertz according to claim 3, it is characterised in that：First silicon chip, the second silicon chip
Material is the silicon that purity reaches 99%.
5. the double detection systems of Terahertz according to claim 4, it is characterised in that：The prism is to hold Lars prism.
6. the double detection systems of Terahertz according to claim 5, it is characterised in that：The thickness of the zinc telluridse crystal is
1mm。
7. the double detection systems of Terahertz according to claim 6, it is characterised in that：The model of the lock-in amplifier
SR830。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820183965.2U CN207850916U (en) | 2018-02-02 | 2018-02-02 | A kind of double detection systems of Terahertz |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820183965.2U CN207850916U (en) | 2018-02-02 | 2018-02-02 | A kind of double detection systems of Terahertz |
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| CN207850916U true CN207850916U (en) | 2018-09-11 |
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