CN207834288U - The semiconductor package of tin function is climbed with pin side wall - Google Patents

The semiconductor package of tin function is climbed with pin side wall Download PDF

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Publication number
CN207834288U
CN207834288U CN201721888196.8U CN201721888196U CN207834288U CN 207834288 U CN207834288 U CN 207834288U CN 201721888196 U CN201721888196 U CN 201721888196U CN 207834288 U CN207834288 U CN 207834288U
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CN
China
Prior art keywords
pin
sidewall sections
dao
plastic packaging
packaging material
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Active
Application number
CN201721888196.8U
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Chinese (zh)
Inventor
刘恺
梁志忠
王亚琴
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JCET Group Co Ltd
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Jiangsu Changjiang Electronics Technology Co Ltd
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Priority to CN201721888196.8U priority Critical patent/CN207834288U/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The utility model is related to a kind of semiconductor packages for climbing tin function with pin side wall, it includes Ji Dao and pin, the pin is set to around Ji Dao, the pin includes planar section and sidewall sections, it is connected smoothly by arch section between the planar section and sidewall sections, base island front is provided with chip by bonding material or solder, the chip is electrically connected by metal wire and pin, the Ji Dao, pin and chip periphery region are encapsulated with plastic packaging material, the height of the sidewall sections is less than plastic packaging material top surface, the planar section, the outer surface of arch section and sidewall sections is exposed to except plastic packaging material.The utility model is when welding PCB, scolding tin can be climbed along upright side walls to higher height, to increase the bonded area of scolding tin and pin, while the air at pin can be made to be discharged along evagination arc, to improve the welding performance of product, the reliability of welding and visual test welded condition.

Description

The semiconductor package of tin function is climbed with pin side wall
Technical field
The utility model is related to a kind of semiconductor packages for climbing tin function with pin side wall, belong to semiconductor packages Technical field.
Background technology
With the development of modern science and technology, semiconductor packages is widely applied.It is in radar, remote-control romote-sensing, aviation boat The extensive application of it etc. proposes increasingly higher demands to its reliability.And it fails caused by semiconductor welding is bad and also gets over More cause the attention of people, it is irreversible because this failure is often fatal.Therefore, it is obtained in semicon industry One good soldering reliability is very important, and the tin layers in semiconductor welding face can make welding more secured, especially Automotive electronics.
It is well known that QFN (Quad Flat No-lead Package, four sides are without pin flat package) and DFN (Duad Flat No-lead Package, bilateral is without pin flat package) it is leadless packages, there are one large area is naked for middle position The pad of dew has conductive force, and the conductive welding disk for realizing electrical connection is with outside the encapsulation of big pad.Usual thermal land With mounted together with conductive welding disk on circuit boards, but exist in the prior art plastic-sealed body cutting after metal pins side because Wuxi bed boundary causes the tin cream on pcb board that can not climb up the metallic region of plastic packaging body side surface, if causing metal pins side The problem of rosin joint or cold welding, clearly can not inspect out in appearance, especially apply the level-one in automotive electronics On safety and secondary safety, the side metal pin of plastic-sealed body to climb tin particularly important.
To solve this problem, industry routine way cuts (referring to Figure 1A) lead frame pin back side outer end, shape Step into a ladder subsequently carries out cutting operation (referring to Figure 1B) again, and can be obtained by has step in this way in pin side Encapsulating structure (referring to Fig. 1 C), to improve its weld PCB when reliability.
But such pin has the hot weld disk in the exposed pads and conductive welding disk and PCB of the encapsulating structure bottom of step When being welded, as shown in A in Fig. 1 D, being easy to remain air at pin step can not be discharged, and cause scolding tin associativity not It is good.Especially when product works, remaining in the air located in step can be because product is heated to generate air expansion, and forms Tin layers cracking between PCB pads and plastic-sealed body pin, leads to the electrical functionality poor contact of integrated circuit, can also be direct when serious Electrical functionality is caused to be stopped.
In addition, such pin have step encapsulating structure manufacturing process in, need first to the lead frame pin back side outside End is cut, and subsequently carries out cutting operation to the lead frame front for completing encapsulation again, needs to carry out cutting twice operation, Cutting efficiency can be caused to reduce, also be easy to accelerate the consume of cutting tool, increase manufacturing cost.
It is to form the groove of drops to the outer end half-etching of the lead frame pin back side to also have other way in the industry（Referring to Fig. 1 E）, due to etching characteristic, the groove formed by such method can be the circular arc of indent, the pin groove of such structure Equally being easy to remain air can not be discharged (referring to Fig. 1 F), cause scolding tin associativity bad.
In addition also have in the industry a kind of with L-shaped outer pin（See Fig. 1 G）Or J-shaped outer pin（See Fig. 1 H）Encapsulating structure, profit The lead frame encapsulated with traditional outer pin carries out load, routing, encapsulating operation, it is with certain length before being punched processing procedure Outer pin（See Fig. 1 I）, need to stretch into molding die between outer pin and plastic-sealed body when being punched processing procedure, and by outer pin The outer pin of L-shaped outer pin or C-shaped, such L-shaped outer pin or C-shaped outer pin envelope are bent and are made towards plastic packaging body side surface Dress can be such that scolding tin edge draws outside because its outer pin has comparable height, when the encapsulating structure is mounted on pcb board Foot has higher weld strength because capillary phenomenon is climbed to certain height when it being made to weld PCB.
However such encapsulating structure that L-shaped outer pin or C-shaped outer pin are formed by Trim Molding, draw being formed outside L-shaped When foot or C-shaped outer pin, as the same there is also following defects：First, when carrying out outer pin molding outer pin towards plastic packaging body side surface Bent, under the influence of the interior pin in Fig. 1 G and Fig. 1 H at A can be because of the reaction force of metal, cause metal pins have by The stress that plastic-sealed body is downwardly and outwardly pushed aside, and in the case where this active force is downward, interior pin upper surface and modeling are be easy to cause at A Envelope material generates lamination between lower surface.It is resulted even under serious situation and forms open circuit at A between bonding wire and interior pin, So as to cause the failure of product；Secondly, this kind of L-shaped outer pin or C-shaped outer pin encapsulating structure are when carrying out outer pin molding, outside It is to stretch into molding die to carry out bending and molding between outer pin and plastic-sealed body again that pin carries out bending towards plastic packaging body side surface, due to Metal pins have certain coefficient of elasticity, and outer pin can be caused to be stressed the relationship that can be sprung back, and outer pin is caused to be formed such as Larger horn opening is formed at B in Fig. 1 J like that, and is hardly formed the shape as being vertically adjacent to plastic packaging body side surface in Fig. 1 G Shape；Finally, this kind of L-shaped outer pin or C-shaped outer pin encapsulating structure have larger volume, due to being to form outer pin bending L-shaped outer pin or C-shaped outer pin encapsulating structure have wider packaging body wide from the point of view of traditional interior pin package Degree, is unfavorable for the development trend of small-sized encapsulated body.
Utility model content
Technical problem to be solved in the utility model is to provide one kind for the above-mentioned prior art there is pin side wall to climb The semiconductor package of tin function, arch section of the pin with evagination and is attached thereto the side wall with certain altitude Part, when welding PCB, scolding tin can be climbed along upright side walls part to higher height, to increase the knot of scolding tin and pin Area is closed, while climbing tin state directly to clearly distinguish the state of welding from appearance.In addition pin while climbing tin Evagination arcuate structure can make the air at pin along evagination arc be discharged, can to avoid remain in scolding tin bubble to The combination for influencing pin and PCB, to improve the welding performance of product, the reliability of welding and visual test welded condition.
The technical scheme in the invention for solving the above technical problem is：It is a kind of to climb the half of tin function with pin side wall Conductor package structure, it includes Ji Dao and pin, and the pin is set to around Ji Dao, and the pin includes planar section and side Wall part, the sidewall sections are located on the outside of planar section, flat by arch section between the planar section and sidewall sections Slip over and cross connection, the arch section convex surface facing outer downside, base island front is provided with by bonding material or solder Chip, the chip are electrically connected by metal wire and pin, the Ji Dao, pin and the encapsulating of chip periphery region Have a plastic packaging material, the height of the sidewall sections is less than plastic packaging material top surface, the planar section, arch section and sidewall sections it is interior Surface is coated within plastic packaging material, and the outer surface of the planar section, arch section and sidewall sections is exposed to except plastic packaging material.
The Ji Dao and pin are the metallic circuit layer that plating is formed.
Compared with prior art, the utility model has the advantage of：
1, a kind of semiconductor package for climbing tin function with pin side wall of the utility model etches shape in support plate At groove in be electroplated and directly form arch section with evagination and be attached thereto the sidewall sections with certain altitude Pin, when welding PCB, scolding tin can be climbed along upright side walls to higher height, to increase the faying face of scolding tin and pin Product, climbs tin state and directly can clearly find out from appearance, and in addition the evagination arcuate structure of pin can be with while climbing tin The air at pin is set to be discharged along evagination arc, so as to avoid remaining bubble in scolding tin to influence pin and PCB Combination, the welding performance of product and the reliability of welding can be improved；
2, a kind of semiconductor package for climbing tin function with pin side wall of the utility model, the vertical side of pin Wall is that plating is formed, rather than the outer pin of conventional frame is carried out Trim Molding and is formed, and the forming process of side wall will not be led The layering between pin and plastic packaging material is caused, to influence the reliability of product；
3, a kind of semiconductor package for climbing tin function with pin side wall of the utility model, Ji Dao and pin are Be electroplated formed line layer, compared to by cutting frame formed have climb the semiconductor package of tin function and by cutting Muscle be molded to be formed with climbing the semiconductor package of tin side wall with smaller encapsulation volume；
4, a kind of semiconductor package for climbing tin function with pin side wall of the utility model, does not have to be cut So the plastic-sealed body singulation of script array can be realized by only needing to remove support plate, so it can save cutting cost.
Description of the drawings
Figure 1A -1B are the cutting twice operation schematic diagram for the encapsulating structure that existing manufacture pin has step.
Fig. 1 C are the schematic diagram for the encapsulating structure that existing pin has step.
Fig. 1 D are the schematic diagram that there is existing pin the encapsulating structure of step to be combined with pcb board.
Fig. 1 E are the schematic diagram for the encapsulating structure that existing pin has drops groove.
Fig. 1 F are the schematic diagram that there is existing pin the encapsulating structure of drops groove to be combined with pcb board.
Fig. 1 G are the schematic diagram of the existing encapsulating structure with L-shaped outer pin.
Fig. 1 H are the schematic diagram of the existing encapsulating structure with C-shaped outer pin.
Fig. 1 I are structure of the existing encapsulating structure with L-shaped outer pin or C-shaped outer pin before carrying out Trim Molding Schematic diagram.
Fig. 1 J are structural schematic diagram of the existing encapsulating structure with L-shaped outer pin after Trim Molding.
Fig. 2 is a kind of schematic diagram of semiconductor package that climbing tin function with pin side wall of the utility model.
Fig. 3 is a kind of stereoscopic schematic diagram of semiconductor package that climbing tin function with pin side wall of the utility model.
Fig. 4 is that the utility model is a kind of with pin side wall climbs the semiconductor package of tin function and pcb board is combined Schematic diagram.
Fig. 5 ~ Figure 14 is a kind of manufacture work of semiconductor package that climbing tin function with pin side wall of the utility model The flow diagram of skill.
Wherein：
Base island 1
Pin 2
Planar section 2.1
Arch section 2.2
Sidewall sections 2.3
Bonding material or solder 3
Chip 4
Metal wire 5
Plastic packaging material 6.
Specific implementation mode
The utility model is described in further detail below in conjunction with attached drawing embodiment.
As shown in Figure 2 and Figure 3, a kind of semiconductor package for climbing tin function with pin side wall in the present embodiment, it Including base island 1 and pin 2, the base island 1 and the metallic circuit layer that pin 2 is plating formation, the pin 2 are set to base island 1 Around, the pin 2 includes planar section 2.1 and sidewall sections 2.3, and the sidewall sections 2.3 are located at outside planar section 2.1 Side is connected smoothly between the planar section 2.1 and sidewall sections 2.3 by arch section 2.2, the arch section 2.2 convex surface facing outer downside, 1 front of the base island is provided with chip 4 by bonding material or solder 3, and the chip 4 passes through Metal wire 5 is electrically connected with pin 2, and the base island 1, pin 2 and 4 peripheral region of chip are encapsulated with plastic packaging material 6, institute The height for stating sidewall sections 2.3 is less than 6 top surface of plastic packaging material, the planar section 2.1, arch section 2.2 and sidewall sections 2.3 Inner surface is coated within plastic packaging material 6, the outer surface exposure of the planar section 2.1, arch section 2.2 and sidewall sections 2.3 Except plastic packaging material 6；
Fig. 4 is that the utility model is a kind of with pin side wall climbs the semiconductor package of tin function and pcb board is combined Schematic diagram, the utility model is electroplated in support plate etches the groove to be formed directly to be formed the arc with evagination and is attached thereto Pin with certain altitude side wall, when welding PCB, scolding tin can be climbed along upright side walls to higher height, to increase The bonded area of scolding tin and pin is climbed tin state and directly can clearly be found out from appearance, in addition pin while climbing tin Evagination arcuate structure can make the air at pin along evagination arc be discharged, so as to avoid remaining bubble in scolding tin To influence the combination of pin and PCB, the welding performance of product and the reliability of welding can be improved.
A kind of manufacturing process of semiconductor package that climbing tin function with pin side wall, the technique includes following step Suddenly：
Step 1: referring to Fig. 5, taking the suitable metal support plate of a piece of thickness, the purpose that this plank uses is made for circuit And line layer structure provides support, the material of this plank is mainly mainly made of metal materials, and the material of metal material can be copper Material, iron material, stainless steel or other metallicses with conducting function；
Step 2: referring to Fig. 6, the photoresist material of development can be exposed by pasting or printing in metal support plate front and the back side Material, to protect subsequent etch metal layer process operation.Photoresist can be photoresistance film, can also be photoresist.Referring to Fig. 7, The photoresist on metal support plate surface is exposed using exposure imaging equipment, is developed and removal part photoresist, with dew Go out metal support plate surface to need to be etched graphics field；
Step 3: referring to Fig. 8, the region that exposure imaging is completed in metal support plate front carries out chemical etching, and etching is formed Groove, bottom portion of groove and side wall are plane, and due to etching characteristic, bottom and side wall junction can be etched to arc.Etching solution Copper chloride either iron chloride or other liquid medicine that can carry out chemical etching may be used.Referring to Fig. 9, gone after the completion of etching Except the photoresistance film on metal support plate surface, the method for removing photoresistance film may be used chemical medicinal liquid and soften and use high pressure water washing Method removes photoresistance film；
Step 4, referring to Figure 10, in metal support plate front, the upper metallic circuit layer of inside grooves point plating, forms pin and base Island, pin include planar section and sidewall sections, and sidewall sections are located on the outside of planar section, between planar section and sidewall sections Be connected smoothly by arch section, the arch section convex surface facing outer downside, the height of sidewall sections is less than groove Top surface, metallic circuit layer material are typically copper, aluminium, nickel etc., can also be other conductive metal substances；
Step 5: coating bonding material or solder referring to Figure 11, on the surfaces Ji Dao, then planted on bonding material or solder Enter chip.The progress bond wire bonding wire operation between chip front side and pin front, the material use gold of the metal wire, The material of silver, copper, aluminium or alloy, it can also be band-like that the shape of metal wire, which can be filiform,；
Step 6: referring to Figure 12, the metal support plate that step 5 is completed to load and routing operation is moulded using plastic packaging material Mold encapsulating mode, spraying equipment spraying method or brush coating mode, the plastic packaging material may be used in envelope, the encapsulating mode of plastic packaging material The epoxy resin of packing material or non-filling substance may be used；
Step 7: referring to Figure 13, Figure 14, metal support plate is removed, exposes the outer surface of pin and Ji Dao, and can be made originally The plastic-sealed body of array is independent, and a kind of semiconductor package for climbing tin function with pin side is made.
The utility model provides a kind of manufacturing process of semiconductor package that climbing tin function with pin side wall, utilizes Etch process forms the groove with certain depth on support plate, by electroplated metal layer in a groove, can be formed with perpendicular The pin of straight sidewall, since the upright side walls of its pin are that plating is formed, rather than the outer pin of conventional frame is carried out rib cutting It is molded with, the forming process of side wall will not lead to the layering between pin and plastic packaging material, to influence the reliability of product. In addition the utility model is without being cut so the plastic-sealed body monomer for only needing removal support plate that can realize script array Change, so it can save cutting cost.
In addition to the implementation, the utility model further includes having other embodiment, all to use equivalents or equivalent The technical solution that alternative is formed, should all fall within the protection domain of the utility model claims.

Claims (2)

1. a kind of semiconductor package for climbing tin function with pin side wall, it is characterised in that：It includes Ji Dao（1）And pin （2）, the pin（2）It is set to Ji Dao（1）Around, the pin（2）Including planar section（2.1）And sidewall sections（2.3）, The sidewall sections（2.3）Positioned at planar section（2.1）Outside, the planar section（2.1）With sidewall sections（2.3）Between lead to Cross arch section（2.2）It is connected smoothly, the arch section（2.2）Convex surface facing outer downside, the Ji Dao（1）Front Pass through bonding material or solder（3）It is provided with chip（4）, the chip（4）Pass through metal wire（5）With pin（2）Form electricity Property connection, the Ji Dao（1）, pin（2）And chip（4）Peripheral region is encapsulated with plastic packaging material（6）, the sidewall sections （2.3）Height be less than plastic packaging material（6）Top surface, the planar section（2.1）, arch section（2.2）And sidewall sections（2.3）'s Inner surface is coated on plastic packaging material（6）Within, the planar section（2.1）, arch section（2.2）And sidewall sections（2.3）It is outer Surface is exposed to plastic packaging material（6）Except.
2. a kind of semiconductor package for climbing tin function with pin side wall according to claim 1, it is characterised in that： The Ji Dao（1）And pin（2）The metallic circuit layer formed for plating.
CN201721888196.8U 2017-12-29 2017-12-29 The semiconductor package of tin function is climbed with pin side wall Active CN207834288U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201721888196.8U CN207834288U (en) 2017-12-29 2017-12-29 The semiconductor package of tin function is climbed with pin side wall

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201721888196.8U CN207834288U (en) 2017-12-29 2017-12-29 The semiconductor package of tin function is climbed with pin side wall

Publications (1)

Publication Number Publication Date
CN207834288U true CN207834288U (en) 2018-09-07

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Country Status (1)

Country Link
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