CN207779552U - A kind of solar simulator detection device - Google Patents
A kind of solar simulator detection device Download PDFInfo
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- CN207779552U CN207779552U CN201721664624.9U CN201721664624U CN207779552U CN 207779552 U CN207779552 U CN 207779552U CN 201721664624 U CN201721664624 U CN 201721664624U CN 207779552 U CN207779552 U CN 207779552U
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Abstract
The utility model embodiment discloses a kind of solar simulator detection device, including：N number of solar cell, N number of resistance, the capture card being connect with N number of resistance, the processor being connect with the capture card, the memory being connect with processor, memory are stored with instruction；Wherein, N is the integer more than or equal to 2, and solar cell is connected in parallel with resistance one-to-one correspondence；Following steps are realized when described instruction is executed by the processor：Under standard test condition, driving capture card acquires the standard voltage value of each resistance；Each resistance is placed in the corresponding region to be tested of solar simulator, driving capture card acquires the measurement voltage value of each resistance；The irradiation level in corresponding region to be tested is calculated according to the measurement voltage value of each resistance and corresponding standard voltage value；Irradiation nonuniformity is calculated according to the irradiation level in all regions to be tested.The utility model embodiment shortens the testing time to solar simulator, to improve production efficiency.
Description
Technical field
The utility model is related to photovoltaic technology, espespecially a kind of solar simulator detection device.
Background technology
Solar simulator is divided by A, B, C three grades according to the performance of solar simulator at present, integrated spectral matching degree,
Irradiation nonuniformity and stability test result judge grade.According to the test request of irradiation nonuniformity by solar simulator
Effective illuminating area is divided at least 64 regions or more, tests the irradiation level in each region, and it is uneven finally to calculate irradiation
Evenness determines whether solar simulator is up to standard according to irradiation nonuniformity.
When solar simulator manufacturer or photovoltaic module manufacturer test irradiation nonuniformity, the crystal silicon of one piece of encapsulation is used
Battery is gradually placed into each region of division and is tested, and records the irradiance value tested every time.Due to solar simulator
Effective illuminating area be divided at least 64 regions, the more big divided region of illuminating area is more, also, adopts each time
Need solar simulator flash of light primary when collecting the irradiation level in region, and it is 10 seconds left sides that solar simulator flash time interval is most short
The right side, the needs of time length 30 seconds to 50 seconds, specific flash time interval is related to the pulse width of solar simulator, therefore,
Unevenness of test usually requires to take 1 hour or more.The photovoltaic module producer of scale of mass production often has ten in workshop
Several solar simulators have all been detected and have been usually required several days.
Utility model content
The utility model embodiment provides a kind of solar simulator detection device, can shorten to solar simulator
Testing time, to improve production efficiency.
The utility model embodiment provides a kind of solar simulator detection device, including：
N number of solar cell, N number of resistance, the capture card being connect with N number of resistance, the place being connect with the capture card
Device, the memory being connect with processor are managed, memory is stored with instruction；
Wherein, N is the integer more than or equal to 2, and solar cell is connected in parallel with resistance one-to-one correspondence；
Following steps are realized when described instruction is executed by the processor：
Under standard test condition, driving capture card acquires the standard voltage value of each resistance；
Each resistance is placed in the corresponding region to be tested of solar simulator, driving capture card acquires each electricity
The measurement voltage value of resistance；
The spoke in corresponding region to be tested is calculated according to the measurement voltage value of each resistance and corresponding standard voltage value
Illumination；
Irradiation nonuniformity is calculated according to the irradiation level in all regions to be tested.
Optionally, further include：
The display module of the irradiation level of standard voltage value and the region to be tested for showing the resistance.
Optionally, each described resistance is connect with a channel of the capture card.
Optionally, the capture card passes through general-purpose serial bus USB interface or external equipment interconnection bus pci interface and institute
State processor connection.
Optionally, the solar cell is thin-film solar cells or crystal silicon battery.
Optionally, the solar cell is the crystal silicon battery of aging.
Optionally, it is realized in the following ways when described instruction is executed by the processor described according to each resistance
Measurement voltage value and corresponding standard voltage value calculate the irradiation level in corresponding region to be tested：
According to formulaCalculate the irradiation level in i-th of region to be tested；
Wherein, IiFor the irradiation level in i-th of region to be tested, RiFor the measurement voltage value of i-th of resistance, RoiIt is i-th
The standard voltage value of resistance.
Optionally, it is realized in the following ways when described instruction is executed by the processor described according to all areas to be measured
The irradiation level in domain calculates irradiation nonuniformity：
According to formulaCalculate irradiation nonuniformity；
Wherein, A is irradiation nonuniformity, ImaxFor the maximum value in the irradiation level in all regions to be tested, IminIt is all
Minimum value in the irradiation level in region to be tested.
Compared with the relevant technologies, the utility model embodiment includes：N number of solar cell, N number of resistance and N number of electricity
The capture card of resistance connection, the processor being connect with the capture card, the memory being connect with processor, memory are stored with finger
It enables；Wherein, N is the integer more than or equal to 2, and solar cell is connected in parallel with resistance one-to-one correspondence；When described instruction is by institute
It states when processor executes and realizes following steps：Under standard test condition, driving capture card acquires the standard electric of each resistance
Pressure value；Each resistance is placed in the corresponding region to be tested of solar simulator, driving capture card acquires each resistance
Measurement voltage value；Corresponding region to be tested is calculated according to the measurement voltage value of each resistance and corresponding standard voltage value
Irradiation level；Irradiation nonuniformity is calculated according to the irradiation level in all regions to be tested.By the utility model embodiment, use
The N number of solar cell to connect one to one and N number of resistance, which are realized, simultaneously surveys N number of region to be tested of solar simulator
Examination, shortens the testing time to solar simulator, to improve production efficiency.
Other features and advantages of the utility model will illustrate in the following description, also, partly from specification
In become apparent, or understood by implementing the utility model.The purpose of this utility model and other advantages can pass through
Specifically noted structure is realized and is obtained in specification, claims and attached drawing.
Description of the drawings
Attached drawing is used for providing further understanding technical solutions of the utility model, and a part for constitution instruction,
With for explaining the technical solution of the utility model, do not constituted to technical solutions of the utility model together with embodiments herein
Limitation.
Fig. 1 is the structure composition schematic diagram of the utility model embodiment solar simulator detection device；
Fig. 2 is the flow chart of the utility model solar simulator detection method.
Specific implementation mode
The embodiments of the present invention are described in detail below in conjunction with attached drawing.It should be noted that not rushing
In the case of prominent, the features in the embodiments and the embodiments of the present application mutually can be combined arbitrarily.
Step shown in the flowchart of the accompanying drawings can be in the computer system of such as a group of computer-executable instructions
It executes.Also, although logical order is shown in flow charts, and it in some cases, can be with suitable different from herein
Sequence executes shown or described step.
Referring to Fig. 1, the utility model embodiment proposes a kind of solar simulator detection device, including：
N number of solar cell 1, N number of resistance 2, the capture card 3 being connect with N number of resistance 2, connect with the capture card 3
Processor 4, the memory 5 being connect with processor 4, memory 5 is stored with instruction；
Wherein, N is the integer more than or equal to 2, and solar cell 1 is connected in parallel with the one-to-one correspondence of resistance 2；
Following steps are realized when described instruction is executed by the processor 1：
Under standard test condition, driving capture card 3 acquires the standard voltage value of each resistance 2；
Each resistance 2 is placed in the corresponding region to be tested of solar simulator, driving capture card acquires each
The measurement voltage value of resistance 2；
The spoke in corresponding region to be tested is calculated according to the measurement voltage value of each resistance 2 and corresponding standard voltage value
Illumination；
Irradiation nonuniformity is calculated according to the irradiation level in all regions to be tested.
In above-mentioned solar simulator detection device, solar cell can be thin-film solar cells or crystal silicon battery.
In above-mentioned solar simulator detection device, since the crystal silicon battery of aging does not decay, crystal silicon battery can
It is realized with crystal silicon battery using aging.
In above-mentioned solar simulator detection device, the capture card that NI usb series may be used in capture card is realized.NI
The acquisition of usb series have multiple channels can simultaneously gathered data, to realize to the multiple to be tested of solar simulator
The test in region.
One channel of each described resistance 2 and the capture card 3 is connected in parallel.
Specifically, each resistance 2 is connected by a channel of bolt connecting terminal corresponding with channel and capture card 3
It connects.
In above-mentioned solar simulator detection device, capture card 3 can pass through universal serial bus (USB, Universal
Serial Bus) interface or external equipment interconnection bus (PCI, Peripheral Component Interconnect) interface
It is connect with the processor 4.
In above-mentioned solar simulator detection device, wherein memory 5 includes at least a type of readable storage medium
Matter, readable storage medium storing program for executing include flash memory, hard disk, multimedia card, card-type memory (for example, safe digital card (SD card, Secure
Digital Memory Card) or data register (DX, Data Register) memory etc.), random access storage device
(RAM, Random Access Memory), static random-access memory (SRAM, Static Random Access
Memory), read-only memory (ROM, Read Only Memory), electrically erasable programmable read-only memory (EEPROM,
Electrically Erasable Programmable Read-Only Memory), programmable read only memory (PROM,
Programmable Read-Only Memory), magnetic storage, disk, CD etc..Processor 4 can be central processing unit
(CPU, Central Processing Unit), controller, microcontroller, microprocessor or other data processing chips etc..
In an alternative embodiment, further include：
The display module 6 of the irradiation level of standard voltage value and the region to be tested for showing resistance.
Display module 6 can be LCD MODULE, touch display module etc..
In above-mentioned test equipment, standard test condition refers to that irradiation level is 1000 watts of every square metre of (W/m2), spectrum be
Am1.5, temperature are 25 DEG C.
Wherein, am1.5 be sunlight by 1.5 times that the actual range of air is SEQUENCING VERTICAL thickness when, the sun is incident
The solar spectrum obtained on unit area on direction.
In above-mentioned test equipment, realized in the following ways according to each resistance 2 when instruction is executed by processor
Measurement voltage value and corresponding standard voltage value calculate the irradiation level in corresponding region to be tested：
According to formulaCalculate the irradiation level in i-th of region to be tested；
Wherein, IiFor the irradiation level in i-th of region to be tested, RiFor the measurement voltage value of i-th of resistance, RoiIt is i-th
The standard voltage value of resistance.
In above-mentioned test equipment, realized in the following ways according to all regions to be measured when instruction is executed by processor
Irradiation level calculates irradiation nonuniformity：
According to formulaCalculate irradiation nonuniformity；
Wherein, A is irradiation nonuniformity, ImaxFor the maximum value in the irradiation level in all regions to be tested, IminIt is all
Minimum value in the irradiation level in region to be tested.
In above-mentioned solar simulator detection device, processor 4, memory 5 and display module 6 may be used terminal and carry out generation
It replaces.Terminal is such as desktop computer, laptop, mobile terminal.
Referring to Fig. 2, the utility model embodiment also proposed a kind of solar simulator detection method, and this method will be N number of
Solar cell and N number of resistance one-to-one correspondence are connected in parallel, and N number of resistance is in parallel with N number of channel of capture card one-to-one correspondence
Connection；
This method includes：
Step 200, under standard test condition, driving capture card acquires the standard voltage value of each resistance.
In the present embodiment, standard test condition refers to that irradiation level is 1000 watts of every square metre of (W/m2), spectrum am1.5,
Temperature is 25 DEG C.
Wherein, am1.5 be sunlight by 1.5 times that the actual range of air is SEQUENCING VERTICAL thickness when, the sun is incident
The solar spectrum obtained on unit area on direction.
Each resistance is placed in the corresponding region to be tested of solar simulator by step 201, driving capture card acquisition
The measurement voltage value of each resistance.
Step 202, calculated according to the measurement voltage value of each resistance and corresponding standard voltage value it is corresponding to be tested
The irradiation level in region.
In the present embodiment, according to formulaCalculate the irradiation level in i-th of region to be tested；
Wherein, IiFor the irradiation level in i-th of region to be tested, RiFor the measurement voltage value of i-th of resistance, RoiIt is i-th
The standard voltage value of resistance.
Step 203 calculates irradiation nonuniformity according to the irradiation level in all regions to be tested.
In the present embodiment, according to formulaCalculate irradiation nonuniformity；
Wherein, A is irradiation nonuniformity, ImaxFor the maximum value in the irradiation level in all regions to be tested, IminIt is all
Minimum value in the irradiation level in region to be tested.
In the above method, by obtaining the standard voltage value of each resistance under standard test condition, to eliminate difference
Error caused by solar cell realizes the calibration to different solar cells, to realize while to solar simulation
Multiple regions to be tested of device are tested, and are shortened the testing time of solar simulator, are improved production efficiency.
Although the embodiment disclosed by the utility model is as above, the content only the utility model for ease of understanding
And the embodiment used, it is not limited to the utility model.Technical staff in any the utility model fields,
Under the premise of not departing from the spirit and scope disclosed by the utility model, it can be carried out in the form and details of implementation any
Modification and variation, but the scope of patent protection of the utility model, still should be subject to the scope of the claims as defined in the appended claims.
Claims (6)
1. a kind of solar simulator detection device, which is characterized in that including：
N number of solar cell, N number of resistance, the capture card being connect with N number of resistance, the processor being connect with the capture card,
The memory being connect with processor, memory are stored with instruction；
Wherein, solar cell is connected in parallel with resistance one-to-one correspondence, each resistance is for acquiring under standard test condition
Measurement voltage value in standard voltage value region to be tested corresponding with solar simulator is placed in is corresponding to be tested to obtain
The irradiation level in region；N is the integer more than or equal to 2.
2. solar simulator detection device according to claim 1, which is characterized in that further include：
The display module of the irradiation level of standard voltage value and the region to be tested for showing the resistance.
3. solar simulator detection device according to claim 1, which is characterized in that each described resistance with it is described
One channel of capture card connects.
4. solar simulator detection device according to claim 1, which is characterized in that the capture card passes through general string
Row bus USB interface or external equipment interconnection bus pci interface are connected to the processor.
5. solar simulator detection device according to claim 1, which is characterized in that the solar cell is film
Solar cell or crystal silicon battery.
6. solar simulator detection device according to claim 1, which is characterized in that the solar cell is aging
Crystal silicon battery.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201721664624.9U CN207779552U (en) | 2017-12-04 | 2017-12-04 | A kind of solar simulator detection device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201721664624.9U CN207779552U (en) | 2017-12-04 | 2017-12-04 | A kind of solar simulator detection device |
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| CN207779552U true CN207779552U (en) | 2018-08-28 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109916593A (en) * | 2019-02-02 | 2019-06-21 | 陕西众森电能科技有限公司 | A kind of solar simulator irradiation nonuniformity test device |
| CN111678589A (en) * | 2020-06-19 | 2020-09-18 | 中国建筑科学研究院有限公司 | Irradiation data acquisition instrument and acquisition method |
| CN112649090A (en) * | 2020-12-25 | 2021-04-13 | 西安隆基绿能建筑科技有限公司 | Irradiation correction method and device and computer storage medium |
-
2017
- 2017-12-04 CN CN201721664624.9U patent/CN207779552U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109916593A (en) * | 2019-02-02 | 2019-06-21 | 陕西众森电能科技有限公司 | A kind of solar simulator irradiation nonuniformity test device |
| CN111678589A (en) * | 2020-06-19 | 2020-09-18 | 中国建筑科学研究院有限公司 | Irradiation data acquisition instrument and acquisition method |
| CN112649090A (en) * | 2020-12-25 | 2021-04-13 | 西安隆基绿能建筑科技有限公司 | Irradiation correction method and device and computer storage medium |
| CN112649090B (en) * | 2020-12-25 | 2024-03-08 | 隆基乐叶光伏科技有限公司 | Irradiation correction method and device and computer storage medium |
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Effective date of registration: 20210105 Address after: 101102 102-lq307, 1-3 / F, building 26, 17 huanke Middle Road, Jinqiao Science and technology industrial base, Tongzhou Park, Zhongguancun Science and Technology Park, Tongzhou District, Beijing Patentee after: Deyun Chuangxin (Beijing) Technology Co.,Ltd. Address before: 100176 7th Floor 805, 66 Building, No. 2 Jingyuan North Street, Daxing Economic and Technological Development Zone, Beijing Patentee before: Juntai innovation (Beijing) Technology Co.,Ltd. |