CN207718954U - composite insulator and composite bushing - Google Patents
composite insulator and composite bushing Download PDFInfo
- Publication number
- CN207718954U CN207718954U CN201721656574.XU CN201721656574U CN207718954U CN 207718954 U CN207718954 U CN 207718954U CN 201721656574 U CN201721656574 U CN 201721656574U CN 207718954 U CN207718954 U CN 207718954U
- Authority
- CN
- China
- Prior art keywords
- material layer
- semiconductor material
- layer
- winding layer
- winding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Insulators (AREA)
Abstract
The utility model discloses a kind of composite insulator, including insulation tube and the full skirt being coated on the outside of insulation tube, insulation tube includes the first winding layer, the first semiconductor material layer and the second winding layer, first winding layer is far from full skirt, and the first semiconductor material layer is between the first winding layer and the second winding layer and on the partial cross section on the outside of the first winding layer.A kind of composite bushing is also disclosed in the utility model.In this way, semiconductor material layer is set inside insulation tube, interference of the electric field to composite insulator can be improved, improve internal field's distribution, electric field is mitigated to concentrate, full skirt surface-discharge is avoided by galvanic corrosion, the service life after avoiding insulation tube from being used for a long time declines, which can be applied in support insulator, composite bushing or other high-tension electricity equipment.
Description
Technical field
The utility model is related to external insulation technical field of transmitting electricity, relate more specifically to a kind of composite insulator and compound sleeve
Pipe.
Background technology
Currently, widely used compound sleeve in the high-tension apparatuses such as GIS, H-GIS, DCB, PASS, COMPASS in electric system
Pipe, mostly uses inflation (SF6) sleeve structure.The composite bushing includes composite insulator and internal center conductor, compound inslation
Attached bag includes the silicon rubber umbrella skirt in fiberglass insulating tube and outside, and center conductor is fixed on the upper lower flange at fiberglass insulating tube both ends
On, the outside of upper flange is equipped with connecting terminal and has high potential, and lower flange one end contacts with the shell of high-tension apparatus, is proximate to
The lower part of the shielded segment on ground, composite bushing is connect with high-tension apparatus, by grounded shield electrode improve center conductor and
Field distribution between fiberglass insulating tube, but easy to produce electric field in the end of grounded shield electrode and concentrate, corresponding silicon
Rubber full skirt surface easy tos produce electric discharge to which by galvanic corrosion, insulation life declines fiberglass insulating tube under high field intensity for a long time；Together
When, intensity is concentrated in order to meet certain electric field, the damage of fiberglass insulating tube, fiberglass insulating tube during preventing from being used for a long time
Need that there is larger internal diameter and pipe thickness, spillage of material is larger, is unfavorable for the reduction of cost.
Utility model content
The purpose of this utility model is to provide a kind of composite insulator and composite bushings, can solve electric field to compound exhausted
The problem of interference of edge, full skirt is declined by galvanic corrosion and insulation tube service life, while composite insulator can be solved for multiple
The problem that internal diameter is larger when trap pipe, tube wall is thicker.
To achieve the above object, a kind of technical solution that the utility model uses for：A kind of composite insulator is provided, including
Insulation tube and the full skirt being coated on the outside of insulation tube, insulation tube are twined including the first winding layer, the first semiconductor material layer and second
Winding layer, for the first winding layer far from full skirt, the first semiconductor material layer is between the first winding layer and the second winding layer and is located at
On partial cross section on the outside of first winding layer.
In this way, semiconductor material layer is set inside insulation tube, electric field can be improved to composite insulator
Interference improves internal field's distribution, mitigates electric field and concentrates, avoids full skirt surface-discharge by galvanic corrosion, insulation tube is avoided to make for a long time
Service life after declines, which can be applied in support insulator, composite bushing or other high-tension electricity equipment.
Wherein, the first semiconductor material layer is to brush molding on the first winding layer by coated semiconductor.
Being formed on the partial cross section of the first winding layer by way of brushing has certain thickness first semiconductor material
The bed of material, technique is relatively easy, and coated semiconductor is connect more closely with the interface of the first winding layer and the second winding layer, avoids boundary
Face separation problem.
Wherein, coated semiconductor is the semiconductor silicon rubber coating containing conductive filler.
Using the semiconductor silicon rubber coating containing conductive filler, field distribution can be preferably influenced, improves electric field collection
Middle phenomenon.
Wherein, the first semiconductor material layer is Wrapping formed on the first winding layer by semiconductor fiber yarn.
It is similar with the technique of original winding layer using Wrapping formed first semiconductor material layer of semiconductor fiber yarn, it is easy
Realize industrial production automation.
Wherein, the first winding layer and the second winding layer are Wrapping formed by the glass fiber yarn of impregnation matrix material.
Wherein, insulation tube further includes the second semiconductor material layer, and the second semiconductor material layer is located on the inside of the first winding layer
Partial cross section on or on the partial cross section on the outside of the second winding layer.
By adding the second semiconductor material layer on the partial cross section on the inside or outside of insulation tube so that insulation tube is not
The factor for having electric interfering field to be distributed at stack pile, further can avoid electric field from concentrating, alleviation effects are further.
Second semiconductor material layer is arranged on the partial cross section on the outside of the second winding layer, can be kept away to a certain extent
Exempt from the corrosion generated to it after filling gas in insulation tube such as SF6 gas ionization discharges.
Wherein, the first semiconductor material layer and the second semiconductor material layer have different resistivity.
It, can be according to practical feelings by the way that the first semiconductor material layer and the second semiconductor material layer of different resistivity is arranged
Condition optimizes combination, and practicability is stronger, and accommodation is wider.
Wherein, the thickness of the first semiconductor material layer and the second semiconductor material layer is identical, the first semiconductor material layer and
Second semiconductor material layer it is of different size.
To achieve the above object, another technical solution provided by the utility model is：A kind of composite bushing is provided, including upper
State composite insulator.
Wherein, which further includes grounded shield electrode, the position of the first semiconductor material layer and grounded shield electrode
It sets corresponding.
Above-mentioned composite insulator is applied to the composite bushing, can improve the field distribution near grounded shield electrode, delays
It is concentrated with electric field, avoids full skirt surface galvanic corrosion phenomenon, extended insulation tube service life, make the electric field tolerance of composite bushing more
By force, therefore, under same voltage class, traditional composite bushing, the pipe wall internal diameters of the composite insulator of the composite bushing are compared
It can reduce, pipe thickness can also reduce, to further decrease production cost.It is compound that above-mentioned composite insulator is applied to this
Casing can cancel the setting of grounded shield electrode in some application scenarios, keep composite bushing structure compacter and minimize.
Description of the drawings
Fig. 1 is the schematic cross-sectional view of the utility model composite insulator first embodiment；
Fig. 2 is the schematic cross-sectional view of the utility model composite insulator second embodiment；
Fig. 3 is the schematic cross-sectional view of the utility model composite insulator third embodiment；
Fig. 4 is the schematic cross-sectional view of the 4th embodiment of the utility model composite insulator；
Fig. 5 is the schematic cross-sectional view of one specific embodiment of the utility model composite bushing.
Specific implementation mode
According to requiring, specific embodiment of the present utility model will be disclosed here.It is to be understood, however, that institute here
The embodiment of disclosure is only the exemplary of the utility model, can be presented as various forms.Therefore, it discloses here
Detail be not to be considered as limiting, and be merely possible to the basis of claim and as instructing this field
Technical staff by practice it is any it is appropriate in a manner of differently apply the representative basis of the utility model, including using here
The feature that disclosed various features and combination may not disclosed clearly here.
As shown in Figure 1, one embodiment of the utility model composite insulator, including insulation tube 104 and it is coated on insulation tube
The full skirt 105 in 104 outsides, insulation tube 104 include winding layer 102, semiconductor material layer 103 and winding layer 101, winding layer 102
Far from full skirt 105, semiconductor material layer 103 is between winding layer 102 and winding layer 101 and positioned at 102 outside of winding layer
On partial cross section.
Specifically, the outside of composite insulator 10 is equipped with full skirt 105, is usually chosen as silicon rubber umbrella skirt 105, silicon rubber umbrella
Skirt 105 is in 104 outside integral injection molding of insulation tube.
Ply angles, including winding layer 102 and winding layer 101 are set in insulation tube 104, it is entire relative to winding layer 102
The sectional area of outer surface, semiconductor material layer 103 are set at electric field concentration, and one is coated generally around the periphery of winding layer 102
Circle, the sectional area of semiconductor material layer 103 is far smaller than the sectional area of 102 entire outer surface of winding layer, that is to say, that positioned at twining
On the partial cross section in 102 outside of winding layer.
Winding layer 101 is located at the outside of winding layer 102 and semiconductor material layer 103,101 part of winding layer and winding layer
102 are in direct contact, and another part is in direct contact with semiconductor material layer 103, semiconductor material layer 103 and winding layer 102 and twine
There is good interfacial bonding property, semiconductor material layer 103 to have certain thickness and width, thickness and width between winding layer 101
The order of magnitude of degree can consider the factors such as material character, electric field strength, interfacial bonding property, be selected according to actual conditions.
In present embodiment, winding layer 102 and winding layer 101 are wound by the glass fiber yarn of impregnation matrix material
Molding.
Basis material is chosen as epoxy resin, vinyl ester resin or polyurethane resin.In present embodiment, base
Body material is epoxy resin, in 101 forming process of winding layer 102 and winding layer, epoxy resin adhesive liquid meeting and glass fiber yarn
By a series of physical chemical change, epoxy resin cured product is formed, the epoxy resin cured product is in epoxy resin adhesive liquid and glass
The boundary layer of structure and superior performance is formed between glass silvalin, which is combined into glass fiber yarn and epoxide-resin glue
One entirety so that the winding layer made of the epoxy resin and glass fiber yarn has good mechanical performance and electrical resistance
Energy.
In one specific embodiment of present embodiment, semiconductor material layer 103 is chosen as being wound by coated semiconductor
Molding is brushed on layer 102, coated semiconductor is the semiconductor silicon rubber coating containing conductive filler.
Based on silicon rubber, addition conductive filler makes 103 base material component of semiconductor silicon rubber coating containing conductive filler
It is formed on the partial cross section of winding layer 102 by way of brushing and is partly led with certain thickness with characteristic of semiconductor
Body material layer 103, technique is relatively easy, the interface of semiconductor silicon rubber coating 103 and the glass fiber yarn of epoxy resin impregnation
Connection is more close, avoids interfacial separation problem.
In another specifically embodiment of present embodiment, semiconductor material layer 103 is to be wound by semiconductor fiber yarn
Wrapping formed on layer 102, semiconductor fiber yarn can be selected in epoxide-resin glue and is wound after dipping so that winding layer 101/
102 and semiconductor material layer 103 be tightly combined.Using the Wrapping formed semiconductor material layer 103 of semiconductor fiber yarn, twined with original
The technique of winding layer 101/102 is similar, industrial production automation easy to implement.
In this way, semiconductor material layer 103 is set inside insulation tube 104, electric field can be improved to compound exhausted
The interference of edge 10 improves internal field's distribution, mitigates electric field and concentrates, avoids 105 surface-discharge of full skirt by galvanic corrosion, avoid absolutely
Edge pipe 104 be used for a long time after service life decline, the composite insulator 10 can be applied to support insulator, composite bushing or other
In high-tension electricity equipment.
As shown in Fig. 2, the utility model composite insulator second embodiment, including insulation tube 206 and it is coated on insulation
The full skirt 205 in 206 outside of pipe, insulation tube 206 include winding layer 201, winding layer 202, semiconductor material layer 203 and semiconductor material
The bed of material 204, winding layer 201 is far from full skirt 205, and semiconductor material layer 203 is between winding layer 201 and winding layer 202 and position
In on the partial cross section in 201 outside of winding layer, semiconductor material layer 204 is located on the partial cross section in 202 outside of winding layer.
Specifically, the outside of composite insulator 20 is equipped with full skirt 205, is usually chosen as silicon rubber umbrella skirt 205, silicon rubber umbrella
Skirt 205 is in 206 outside integral injection molding of insulation tube.Winding layer 201 and winding layer 202 are the glass by impregnation matrix material
Glass silvalin is Wrapping formed.
Semiconductor material layer 203 is set at electric field concentration, generally around one circle of periphery cladding of winding layer 201, is partly led
The sectional area of body material layer 203 is far smaller than the sectional area of 201 entire outer surface of winding layer, that is to say, that is located at winding layer 201
On the partial cross section in outside.
Semiconductor material layer 204 position of semiconductor material layer 204 and is partly led between winding layer 202 and full skirt 205
The position of body material layer 203 is corresponding so that has the factor that electric interfering field is distributed, energy at the different-thickness of insulation tube 206
Enough further electric field to be avoided to concentrate, alleviation effects are further.
The material of semiconductor material layer 203 and semiconductor material layer 204 is optional identical or different, if for example, semiconductor material
The bed of material 203 is to be molded by way of brushing by the semiconductor silicon rubber coating containing conductive filler, semiconductor material layer 204
It is chosen as being molded by way of brushing by the semiconductor silicon rubber coating containing conductive filler, certainly, semiconductor material layer 204
Also optional to be molded by way of brushing by other coated semiconductors；If semiconductor material layer 203 is by semiconductor fiber yarn
Wrapping formed, semiconductor material layer 204 is also optional Wrapping formed by semiconductor fiber yarn.
In present embodiment, semiconductor material layer 203 and semiconductor material layer 204 have different resistivity.Specifically may be used
It shows as, semiconductor material layer 203 is identical with the thickness of semiconductor material layer 204, semiconductor material layer 203 and semi-conducting material
Layer 204 it is of different size.
By the way that the semiconductor material layer 203 and semiconductor material layer 204 of different resistivity is arranged, individually partly led compared to setting
The case where body material layer, can optimize combination according to actual conditions, and the field regime that can be adjusted is wider, is done to electric field
It is stronger to disturb ability, practicability is stronger, and accommodation is wider.
Semiconductor material layer 204 is arranged on the partial cross section in 202 outside of winding layer, can be avoided to a certain extent
The corrosion that it is generated after filling gas such as SF6 gas ionization discharges in insulation tube 206.
As shown in figure 3, the utility model composite insulator third embodiment, including insulation tube 306 and it is coated on insulation
The full skirt 305 in 306 outside of pipe, insulation tube 306 include winding layer 301, winding layer 302, semiconductor material layer 303 and semiconductor material
The bed of material 304, winding layer 301 is far from full skirt 305, and semiconductor material layer 303 is between winding layer 301 and winding layer 302 and position
In on the partial cross section in 301 outside of winding layer, semiconductor material layer 304 is located on the partial cross section of 301 inside of winding layer.
Specifically, the outside of composite insulator 30 is equipped with full skirt 305, is usually chosen as silicon rubber umbrella skirt 305, silicon rubber umbrella
Skirt 305 is in 306 outside integral injection molding of insulation tube.Winding layer 301 and winding layer 302 are the glass by impregnation matrix material
Glass silvalin is Wrapping formed.
Liner of the semiconductor material layer 304 as winding layer 301 is incorporated on the partial cross section of 301 inside of winding layer, half
Conductor material layer 303 is located on the partial cross section in 301 outside of winding layer, and the position of the two is corresponding, is usually all disposed within electric field
At concentration.
The material of semiconductor material layer 303 and semiconductor material layer 304 is optional identical or different, if for example, semiconductor material
The bed of material 303 is to be molded by way of brushing by the semiconductor silicon rubber coating containing conductive filler, semiconductor material layer 304
It is chosen as being molded by way of brushing by the semiconductor silicon rubber coating containing conductive filler, certainly, semiconductor material layer 304
Also optional to be molded by way of brushing by other coated semiconductors；If semiconductor material layer 303 is by semiconductor fiber yarn
Wrapping formed, semiconductor material layer 304 is also optional Wrapping formed by semiconductor fiber yarn.
The resistivity of semiconductor material layer 303 and semiconductor material layer 304 is optional identical or different, and the half of different resistivity
Conductor material layer can optimum organization, stronger to the control and regulation ability of electric field, the scope of application is wider.
As shown in figure 4, the 4th embodiment of the utility model composite insulator, including insulation tube 407 and it is coated on insulation
The full skirt 405 in 407 outside of pipe, insulation tube 407 include winding layer 401, winding layer 402, semiconductor material layer 403, semiconductor material
The bed of material 406 and semiconductor material layer 404, winding layer 401 are located at 401 He of winding layer far from full skirt 405, semiconductor material layer 403
Between winding layer 402 and on the partial cross section in 401 outside of winding layer, semiconductor material layer 406 is located at 401 inside of winding layer
Partial cross section on, semiconductor material layer 404 is located on the partial cross section in the outside of winding layer 402.
The resistivity of semiconductor material layer 406, semiconductor material layer 403 and semiconductor material layer 404 is optional identical or not
Together, the optional stepped distribution of different resistivity.
By being arranged alternately three layers of semiconductor material layer between two layers of winding layer, with stronger practicability and more
The wide scope of application can preferably mitigate electric field concentration, improve field distribution, the galvanic corrosion to full skirt 405 is avoided to damage, extend
The service life of insulation tube 407.
One embodiment of the utility model composite bushing, includes the composite insulator of the respective embodiments described above.
In a specific embodiment, as shown in figure 5, the composite bushing 500 includes composite insulator 50 and earth shield
Electrode 51, composite insulator 50 include insulation tube 504 and the full skirt 505 for being coated on 504 outside of insulation tube, and insulation tube 504 includes
Winding layer 501, semiconductor material layer 503 and winding layer 502, far from full skirt, semiconductor material layer 503 is located to be twined winding layer 501
Between winding layer 501 and winding layer 502 and on the partial cross section in 501 outside of winding layer.
Semiconductor material layer 503 in composite insulator 50 corresponds to the position of grounded shield electrode 51, can mitigate electricity
Field is concentrated, and is avoided 505 surface-discharge of corresponding silicon rubber umbrella skirt by galvanic corrosion, is avoided insulation tube 504 exhausted under high field intensity for a long time
The edge service life declines；Simultaneously as the electric field strength at same location declines, the internal diameter and pipe thickness of insulation tube 504 can subtract
It is small, it still disclosure satisfy that the requirement of composite bushing 500, in the case of same voltage class, the composite bushing 500 is corresponding multiple
It closes 50 internal diameter of insulator and pipe thickness reduces, spillage of material reduces, and can significantly reduce production cost, and it is multiple to be conducive to miniaturization
The realization of trap pipe.
In some application scenarios, keep semiconductor material layer 503 and the lower flange 52 of composite bushing 500 in electrical contact, it can
The effect for substituting grounded shield electrode 51, to cancel the setting of grounded shield electrode 51 so that composite bushing structure is more stepped up
It gathers and minimizes, save space and reduce cost.
It should be noted that the protection of the utility model composite insulator is characterized by winding layer and semiconductor material layer
It is staggered, the number of plies of winding layer and the number of plies of semiconductor material layer are configured according to actual conditions, it is not limited to above-mentioned
Each embodiment.
The technology contents and technical characterstic of the utility model have revealed that as above, it being understood, however, that in the utility model
Under creative ideas, those skilled in the art can make various changes and improve to above structure and material, including here individually
The combination for the technical characteristic for disclosing or being claimed, it will be apparent that other combinations including these features.These deformations and/or combination
It each falls in the technical field involved by the utility model, and falls into the protection domain of the utility model claims.
Claims (10)
1. a kind of composite insulator, which is characterized in that described exhausted including insulation tube and the full skirt being coated on the outside of the insulation tube
Edge pipe includes the first winding layer, the first semiconductor material layer and the second winding layer, and first winding layer is far from the full skirt, institute
The first semiconductor material layer is stated between first winding layer and second winding layer and is located at first winding layer
On the partial cross section in outside.
2. composite insulator as described in claim 1, which is characterized in that first semiconductor material layer is to be applied by semiconductor
Layer brushes molding on first winding layer.
3. composite insulator as claimed in claim 2, which is characterized in that the coated semiconductor is half containing conductive filler
Conductor silicon rubber coating.
4. composite insulator as described in claim 1, which is characterized in that first semiconductor material layer is by semiconductor fibre
It is Wrapping formed on first winding layer to tie up yarn.
5. composite insulator as described in claim 1, which is characterized in that first winding layer and second winding layer are equal
It is Wrapping formed by the glass fiber yarn of impregnation matrix material.
6. composite insulator as described in claim 1, which is characterized in that the insulation tube further includes the second semi-conducting material
Layer, second semiconductor material layer are located on the partial cross section on the inside of first winding layer or are wound positioned at described second
On the partial cross section in layer outside.
7. composite insulator as claimed in claim 6, which is characterized in that first semiconductor material layer and described the second half
Conductor material layer has different resistivity.
8. composite insulator as claimed in claim 7, which is characterized in that first semiconductor material layer and described the second half
The thickness of conductor material layer is identical, first semiconductor material layer and second semiconductor material layer it is of different size.
9. a kind of composite bushing, which is characterized in that including such as claim 1-8 any one of them composite insulator.
10. composite bushing as claimed in claim 9, which is characterized in that further include grounded shield electrode, first semiconductor
Material layer is corresponding with the position of the grounded shield electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721656574.XU CN207718954U (en) | 2017-12-01 | 2017-12-01 | composite insulator and composite bushing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721656574.XU CN207718954U (en) | 2017-12-01 | 2017-12-01 | composite insulator and composite bushing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207718954U true CN207718954U (en) | 2018-08-10 |
Family
ID=63058116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721656574.XU Active CN207718954U (en) | 2017-12-01 | 2017-12-01 | composite insulator and composite bushing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207718954U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109830892A (en) * | 2019-03-04 | 2019-05-31 | 江苏神马电力股份有限公司 | A kind of bucking electrode and its preparation process anticorona for gas casing |
| WO2019105126A1 (en) * | 2017-12-01 | 2019-06-06 | 江苏神马电力股份有限公司 | Composite insulator and method for manufacturing same, and composite casing |
| CN113412522A (en) * | 2019-02-11 | 2021-09-17 | 赫兹曼电力公司 | Elastic tubular high voltage insulator |
-
2017
- 2017-12-01 CN CN201721656574.XU patent/CN207718954U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019105126A1 (en) * | 2017-12-01 | 2019-06-06 | 江苏神马电力股份有限公司 | Composite insulator and method for manufacturing same, and composite casing |
| CN113412522A (en) * | 2019-02-11 | 2021-09-17 | 赫兹曼电力公司 | Elastic tubular high voltage insulator |
| CN109830892A (en) * | 2019-03-04 | 2019-05-31 | 江苏神马电力股份有限公司 | A kind of bucking electrode and its preparation process anticorona for gas casing |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN207718954U (en) | composite insulator and composite bushing | |
| JP4361488B2 (en) | Highly isolated inductive data coupler | |
| CN109559861A (en) | A kind of dry type high-voltage capacitor core | |
| KR20150101353A (en) | Power cable having termination connection box | |
| CN205406106U (en) | Middle and high voltage oil resistant rubber semiconduction shielded cable | |
| CN109872848A (en) | Composite insulator and its manufacturing method, composite bushing | |
| CN206412103U (en) | Coaxial special type heavy current pulse cable | |
| EA001725B1 (en) | Power transformer/inductor | |
| CN106782940A (en) | A kind of high-voltage direct-current sleeve of electric resistance partial pressure | |
| CN100449653C (en) | High-pressure insulation core with lining layer | |
| WO2019084999A1 (en) | Equipment wiring outlet bushing employing electrical conductivity self-adaptively regulating composite material | |
| CN114400814A (en) | Stator bar, stator and generator | |
| KR101547419B1 (en) | High voltage arrangement comprising an insulating structure | |
| CN204390798U (en) | Be applicable to the serial communication cable of electric cable failure detector | |
| WO2018132951A1 (en) | Wall bushing using non-linear conductive composite material-based voltage equalization structure | |
| CN206432124U (en) | The lead wire insulation structure of dry-type transformer | |
| CN108630361A (en) | A kind of insulating sleeve | |
| CN209461225U (en) | A kind of solid insulation high-voltage capacitance sleeving core | |
| CN201191751Y (en) | Cable terminal head | |
| CN208570226U (en) | A kind of insulating sleeve | |
| CN207558550U (en) | A kind of isolating transformer | |
| CN216649359U (en) | Stator bar, stator and generator | |
| US3033915A (en) | Potheads and cable terminals | |
| CN108447601A (en) | A kind of solid-liquid mix insulation cable | |
| CN213042703U (en) | Woven high-frequency connecting wire with signal transmission function |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |