CN207651792U - A kind of integrated erbium-doped fiber amplifier - Google Patents
A kind of integrated erbium-doped fiber amplifier Download PDFInfo
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- CN207651792U CN207651792U CN201721536279.0U CN201721536279U CN207651792U CN 207651792 U CN207651792 U CN 207651792U CN 201721536279 U CN201721536279 U CN 201721536279U CN 207651792 U CN207651792 U CN 207651792U
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- doped fiber
- erbium
- shell
- fiber amplifier
- laser
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Abstract
The utility model is related to fiber amplifier fields, more particularly to a kind of integrated erbium-doped fiber amplifier, the erbium-doped fiber amplifier includes the shell and chip of laser being integrally disposed in shell, wavelength division multiplexer and Er-doped fiber, and the shell is also circumscribed with input terminal and output end；Wherein, optical signal is input to shell by input terminal, and is input to wavelength division multiplexer, the chip of laser emits laser to wavelength division multiplexer, which couples optical signal and laser, and is input to Er-doped fiber, the Erbium-doped fiber amplifier optical signal, and optical signal is exported by output end.The utility model makes erbium-doped fiber amplifier Miniaturization Design, and chip of laser is integrally disposed with erbium-doped fiber amplifier under the premise of not reducing performance, improves integrated level, and reduce production cost.
Description
Technical field
The utility model is related to fiber amplifier fields, and in particular to a kind of integrated erbium-doped fiber amplifier.
Background technology
Fiber amplifier includes a variety of, including erbium-doped fiber amplifier (EDFA:Erbium Doped Fiber
Application Amplifier), it is widely used in the fields such as optical communication, optical-fiber network, cable television and national defence.Er-doped fiber
Amplifier is directly amplified optical signal using Er-doped fiber, has eradicated the electronic bottleneck in Traditional photovoltaic repeater, compensation
The signal decaying that link load is brought.Its advantage includes：High gain, noise are low, power is big, working band is wide, polarization is small, to passing
Defeated code check and format are transparent etc., are optical relay amplifiers ideal in current intensive light wave multiplex system.
Erbium-doped fiber amplifier overall dimensions are determined that stock size is larger by system user, and most of is 180*130*
20mm；Miniaturization erbium-doped fiber amplifier overall dimensions as defined in MSA associations are 90*70*15mm, Half-MSA overall dimensions
Generally 70*40*10mm.The communication apparatus of requirement with to(for) highly integrated, low-power consumption, low cost is more and more stronger, miniaturization
The exploitation of fiber amplifier is one of developing direction of WeiLai Technology, wherein 40G/100G optical transmission systems put Er-doped fiber
The size of big device requires smaller, such as 60*40*10mm.
Also, common erbium-doped fiber amplifier is external by chip of laser, and integration degree is low, is not easy to Er-doped fiber
The use of amplifier.
Therefore, a kind of integrated erbium-doped fiber amplifier is designed, chip of laser and erbium-doped fiber amplifier are integrated
One of the problem of setting is always those skilled in the art's primary study.
Utility model content
The technical problem to be solved by the present invention is to for the drawbacks described above of the prior art, provide a kind of integrated
Erbium-doped fiber amplifier, solve excessively complicated, not integrated enough the problem of erbium-doped fiber amplifier structure.
To solve the technical problem, the utility model provides a kind of integrated erbium-doped fiber amplifier, the er-doped light
Fiber amplifier includes the chip of laser, wavelength division multiplexer and Er-doped fiber being integrally disposed in a shell, and the shell is also outer
It is connected to input terminal and output end；Wherein, optical signal is input to shell by input terminal, and is input to wavelength division multiplexer, the laser
For device chip emission laser to wavelength division multiplexer, which couples optical signal and laser, and is input to er-doped light
Fibre, the Erbium-doped fiber amplifier optical signal, and optical signal is exported by output end.
Wherein, preferred version is：It is also integrally disposed in the shell to have the first isolator and the second isolator, this first every
Input terminal is connected from device, which connects output end；First isolator by the optical signal inputted by input terminal into
Row isolation, and it is input to wavelength division multiplexer；Second isolator is isolated by the optical signal of amplification, and is exported to output end.
Wherein, preferred version is：It is also integrally disposed in the shell to have first collimator and the second collimator, first standard
Straight device is separately connected wavelength division multiplexer and Er-doped fiber, which is separately connected Er-doped fiber and the second isolator；It should
First collimator collimates the optical signal after coupling, and is input to Er-doped fiber；Second collimator is by amplified light
Signal is collimated, and is input to the second isolator.
Wherein, preferred version is：The shell is equipped with the first anode and the first cathode, and first anode and the first cathode are equal
Connecting laser chip, first anode and the first cathode are powered, and chip of laser is made to emit laser.
Wherein, preferred version is：The shell is also integrally disposed refrigerator, and negative equipped with the second anode and second
Pole, second anode connect refrigerator with the second cathode, and second anode and the second cathode are powered, and make in refrigerator control shell
The temperature in portion.
Wherein, preferred version is：It is also integrally disposed in the shell to have a control module, the control module connecting laser
Chip, and the power of control module control chip of laser transmitting laser.
Wherein, preferred version is：The input terminal and output end are set to the same side of shell.
Wherein, preferred version is：The input terminal is set to the side of shell, and the output end is set to the other side of shell.
Wherein, preferred version is：The chip of laser is pump laser chip.
The beneficial effects of the utility model are that compared with prior art, the utility model is a kind of integrated by designing
Erbium-doped fiber amplifier make erbium-doped fiber amplifier Miniaturization Design under the premise of not reducing performance, and by laser
Chip is integrally disposed with erbium-doped fiber amplifier, improves integrated level, and reduce production cost.
Description of the drawings
Below in conjunction with accompanying drawings and embodiments, the utility model is described in further detail, in attached drawing：
Fig. 1 is the schematic diagram of the utility model erbium-doped fiber amplifier；
Fig. 2 is the outside drawing of the utility model erbium-doped fiber amplifier.
Specific implementation mode
In conjunction with attached drawing, elaborate to the preferred embodiment of the utility model.
As depicted in figs. 1 and 2, the utility model provides a kind of preferred embodiment of integrated erbium-doped fiber amplifier.
Specifically, and with reference to figure 1, a kind of integrated erbium-doped fiber amplifier, which includes input
End 10 and the first isolator 20, the input terminal 10 connect the first isolator 20, which further includes output end 90
With the second isolator 80, which connects the second isolator 80.Wherein, first isolator 20 and the second isolator 80 are used
In making optical signal one-way transmission, prevent light reflection, and be isolated the backlight of light path to by optical signal interfere, reduction is mixed
Noise when doped fiber amplifier works improves the reliability and stability of erbium-based amplifier work.
Further, and with reference to figure 1, the erbium-doped fiber amplifier further includes wavelength division multiplexer 30, chip of laser 40
With Er-doped fiber 60；The wavelength division multiplexer 30 is separately connected the first isolator 20 and chip of laser 40, the wavelength division multiplexer 30
First collimator 50 is equipped between Er-doped fiber 60；Wherein, optical signal enters the first isolator 20 by input terminal 10, passes through
Enter wavelength division multiplexer 30 after the buffer action of first isolator 20, which emits laser to wavelength division multiplexer
30, which couples optical signal and laser, and is mixed by entering after the beam collimation of first collimator 50
Erbium optical fiber 60, the Er-doped fiber 60 will export after optical signal amplification to the second isolator 20, and second isolator 20 is to optical signal
Optical signal is exported by output end 90 after being isolated.
Preferably, the chip of laser 40 is pump laser chip, the laser which goes out
For pump light, then the pump light that wavelength division multiplexer 30 goes out in the optical signal and pump laser chip emission for receiving input is laggard
Row coupling, then the optical signal after coupling is inputted into the first collimator 50, followed by the transmission of optical signal.
Further, and with reference to figure 1, the second collimator is equipped between the Er-doped fiber 60 and second isolator
70, which will enter the second collimator 70 after optical signal amplification, and optical signal is accurate by the light beam of the second collimator 70
It is exported to the second isolator 20 after straight.
In the present embodiment, also integrally disposed in the shell 1 to have a control module 41, the control module 41 connection swashs
Light device chip 40, and the control module 41 control chip of laser 40 emits the power of laser.
Wherein, and with reference to figure 2, first isolator 20, wavelength division multiplexer 30, chip of laser 40, first collimator
50, Er-doped fiber 60, the second collimator 70, the second isolator 80 are encapsulated in a shell 1；Improve it is integrated, by laser core
Piece 40 and erbium-doped fiber amplifier are integrally disposed, without that in 1 extra openings of shell, could make external chip of laser 40
Transmitting laser enters shell 1；Also, the shell 1 shields, and external environment is avoided to damage above-mentioned component.
In the present embodiment, and with reference to figure 2, the shell 1 is equipped with the first anode 2 and the first cathode 3, first anode 2
It is the exposed pin outside shell 1 with the first cathode 3, first anode 2 and the first cathode 3 are all connected with chip of laser 40, should
First anode 2 and the first cathode 3 are powered, and to be powered up for chip of laser 40, chip of laser 40 are made to emit laser.
Further, the shell 1 is also integrally disposed refrigerator, and equipped with the second anode 4 and the second cathode 5, should
Second anode 4 and the second cathode 5 are the exposed pin outside shell 1, and second anode 4 and the second cathode 5 connect refrigerator,
The erbium-doped fiber amplifier can distribute heat in use, and second anode 4 and the second cathode 5 are powered, to be refrigeration
Device powers up, and makes the temperature inside refrigerator control shell 1, ensures that 1 inside of shell is a temperature constant state, avoids the excessively high damage of temperature
Erbium-doped fiber amplifier.
Preferably, and with reference to figure 2, the input terminal 10 and output end 90 set on the same side of shell 1 so that optical signal exists
The same side is inputted and is exported.
Alternatively, the input terminal 10 is set to the side of shell 1, the output end 90 is set to the other side of shell 1, avoids light
Signal interferes with each other.
In conclusion the above is only the preferred embodiments of the present utility model only, it is not intended to limit the utility model
Protection domain.Any modification made within the spirit and principle of the utility model, equivalent replacement, improve etc., it should all wrap
Containing within the protection scope of the present utility model.
Claims (9)
1. a kind of integrated erbium-doped fiber amplifier, it is characterised in that：The erbium-doped fiber amplifier includes shell and collection
At the chip of laser, wavelength division multiplexer and Er-doped fiber being arranged in shell, the shell is also circumscribed with input terminal and output
End；Wherein, optical signal is input to shell by input terminal, and is input to wavelength division multiplexer, and chip of laser transmitting laser arrives
Wavelength division multiplexer, which couples optical signal and laser, and is input to Er-doped fiber, the Erbium-doped fiber amplifier
Optical signal, and optical signal is exported by output end.
2. erbium-doped fiber amplifier according to claim 1, it is characterised in that：It is also integrally disposed in the shell to have first
Isolator and the second isolator, first isolator connect input terminal, which connects output end；First isolator
The optical signal inputted by input terminal is isolated, and is input to wavelength division multiplexer；Second isolator believes the light of amplification
Number it is isolated, and is exported to output end.
3. erbium-doped fiber amplifier according to claim 1 or 2, it is characterised in that：It is also integrally disposed in the shell to have
First collimator and the second collimator, the first collimator are separately connected wavelength division multiplexer and Er-doped fiber, second collimator
It is separately connected Er-doped fiber and the second isolator；The first collimator collimates the optical signal after coupling, and is input to and mixes
Erbium optical fiber；Second collimator collimates amplified optical signal, and is input to the second isolator.
4. erbium-doped fiber amplifier according to claim 3, it is characterised in that：The shell is equipped with the first anode and first
Cathode, first anode and the first cathode are all connected with chip of laser, and first anode and the first cathode are powered, and make laser core
Piece emits laser.
5. erbium-doped fiber amplifier according to claim 4, it is characterised in that：The shell is also integrally disposed refrigeration
Device, and equipped with the second anode and the second cathode, which connects refrigerator with the second cathode, second anode and second
Cathode is powered, and makes the temperature of refrigerator control enclosure interior.
6. erbium-doped fiber amplifier according to claim 4 or 5, it is characterised in that：It is also integrally disposed in the shell to have
One control module, the control module connecting laser chip, and the work(of control module control chip of laser transmitting laser
Rate.
7. erbium-doped fiber amplifier according to claim 6, it is characterised in that：The input terminal and output end are set to shell
The same side.
8. erbium-doped fiber amplifier according to claim 6, it is characterised in that：The input terminal is set to the side of shell,
The output end is set to the other side of shell.
9. erbium-doped fiber amplifier according to claim 7 or 8, it is characterised in that：The chip of laser is that pumping swashs
Light device chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721536279.0U CN207651792U (en) | 2017-11-16 | 2017-11-16 | A kind of integrated erbium-doped fiber amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721536279.0U CN207651792U (en) | 2017-11-16 | 2017-11-16 | A kind of integrated erbium-doped fiber amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207651792U true CN207651792U (en) | 2018-07-24 |
Family
ID=62890061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721536279.0U Active CN207651792U (en) | 2017-11-16 | 2017-11-16 | A kind of integrated erbium-doped fiber amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207651792U (en) |
-
2017
- 2017-11-16 CN CN201721536279.0U patent/CN207651792U/en active Active
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Address after: 518000 No. 35, Cuijing Road, Pingshan New District, Shenzhen, Guangdong Patentee after: Ona Technology (Shenzhen) Group Co.,Ltd. Address before: No.35 Cuijing Road, Pingshan District, Shenzhen City, Guangdong Province Patentee before: O-NET COMMUNICATIONS (SHENZHEN) Ltd. |
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