CN207596994U - Vertical temperature gradient crystal growing apparatus is rotated after a kind of compound crystal synthesis - Google Patents
Vertical temperature gradient crystal growing apparatus is rotated after a kind of compound crystal synthesis Download PDFInfo
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- CN207596994U CN207596994U CN201721699541.3U CN201721699541U CN207596994U CN 207596994 U CN207596994 U CN 207596994U CN 201721699541 U CN201721699541 U CN 201721699541U CN 207596994 U CN207596994 U CN 207596994U
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Abstract
The utility model rotates vertical temperature gradient crystal growing apparatus after providing a kind of compound crystal synthesis, belong to semiconductor crystal synthesis and grower field, the technical solution adopted is that rotate vertical temperature gradient crystal growing apparatus after a kind of compound crystal synthesis, including furnace body, the synthesis being located in furnace chamber and crystal growth system and its mating heating system, temp measuring system, heat-insulation system and control system, the synthesis includes crucible and the volatile element carrier for being arranged on its horizontal side with crystal growth system, volatile element carrier connects the horizontal injection synthesis of realization by ascending pipe with crucible；Furnace body has rotary freedom by mating rotating mechanism.Advantageous effect is the rotary system of the ingenious setting furnace body of the present apparatus, controls volatile element support container and the change in location of crystal growing crucible, level injection synthesis and the ingenious combination of vertical gradient crystal growth；Apparatus structure is simple, is easy to operate and control, conducive to the industrialization production of semiconductor crystal.
Description
Technical field
The utility model is related to the devices of semiconductor crystal synthesis and growth, and in particular to after a kind of compound crystal synthesis
Vertical temperature gradient crystal growing apparatus is rotated, the needs such as indium phosphide, gallium phosphide is particularly suitable for and volatile element is closed
Into semiconductor crystalline material VGF crystal growths.
Background technology
Compound semiconductor is widely used in electronics industry, is important compound semiconductor materials.For example, InP, GaP,
GaAs etc..Contain volatile element in being formed due to element, synthetic method has horizontal proliferation synthesizes and injection synthesizes etc..Its crystal
Growing method has LEC (Liquid Encapsulated Czochralski：Liquid seal straight pull) method, VGF (Vertical
gradient freezing：Vertical gradient solidification) method etc., since LEC methods need equipment cost higher, crystal stress is larger,
Dislocation density is high, and crystal growth technique is complicated, is unfavorable for growing the large-sized monocrystalline of high quality, therefore, at present using more
It is VGF methods, the container equipped with polycrystal raw material is vertically arranged in the phase set in stove by used device position vertical gradient single crystal growing furnace
Temperature gradient position is answered, after polycrystal raw material fine melt, is slowly crystallized from lower end thereof and is extended to upper one end.VGF methods are given birth to
Long speed is slower, temperature gradient very little, therefore stress is smaller suffered by crystal, it is possible to it is relatively low to grow dislocation density
Crystalline material.Although there are many crystal defect prepared by LEC methods, continuous LEC crystal growths can but obtain high-purity after synthesis
Monocrystal.For VGF, to realize that continuous VGF crystal growths are with regard to highly difficult after synthesizing, this is because before crystal growth,
It needs seed crystal being first placed in crucible, but in building-up process, compound seed crystal by simple metal or can synthesize molten
Body is melted or is eaten away.In order to protect seed crystal, need to by add polycrystal material and cumbersome temperature control program come protect seed crystal not by
Building-up process is melted, and leading to synthetic crystal growth course, time-consuming, process complexity is cumbersome, easy error, it is difficult to be industrialized and big
Scale Growth, continuous VGF prepares the development of semiconductor crystalline material after serious obstruction synthesis.
Invention content
The utility model needs to be put into polycrystal material, growth before VGF crystal growths need to synthesize after current injection method synthesizes to solve
The technical issues of process control very complicated, big industrialization difficulty, provides rotation vertical gradient crystal life after a kind of Opacity in lens
Long device using horizontally disposed volatile element support container and crystal growing crucible, realizes Volatile Elements and simple metal member
Plain horizontal injection synthesis further controls the whole slowly rotation of furnace body by rotary system, and then carries out VGF crystal growths, real
Horizontal injection synthesis and vertical gradient solidification are showed（VGF）Crystal growth combines, and to prepare high-purity compound semiconductor crystal, keeps away
Seed crystal is melted by simple metal before having exempted from VGF growths, and the apparatus structure is simple, is easy to operate and control, conducive to semiconductor crystal
Industrialization production.
The technical solution adopted in the utility model is：Rotation vertical temperature gradient crystal life after a kind of compound crystal synthesis
Long device, including furnace body, the synthesis being located in furnace chamber and crystal growth system and its mating heating system, thermometric system
System, heat-insulation system and control system, which is characterized in that the synthesis includes side with crystal growth system and is equipped with seed crystal accommodating chamber
Crucible and be arranged on the volatile element carrier of its horizontal side, the volatile element carrier connects by ascending pipe and crucible
It is logical to realize horizontal injection synthesis；The furnace body has rotary freedom by mating rotating mechanism, realizes horizontal injection synthesis
Vertical temperature gradient crystal growth is rotated afterwards.
Further, the injection pipe end deviates from or tilting is far from volatile element carrier.
Further, the ascending pipe is multisection type, and latter end tilting is held far from volatile element carrier with volatile element
It is in 60 ° of -85 ° of angles to carry device.
Further, it is further included in the synthesis and crystal growth system and loads the crucible and volatile element carrier
Loading frame, the mating setting sealing cover of loading frame, sealing cover are equipped with exhaust outlet.
Further, the loading frame is quartz, silicon carbide, boron nitride or ceramic material.
Further, the heating system structure includes being set in the multistage heating of synthesis and crystal growth system periphery
Device；The heat-insulation system structure includes being set in the muff outside heating system.
Further, the temp measuring system structure includes being respectively used to measure seed crystal in crucible and accommodates cavity region, synthesizes
With the thermocouple a of crystal growth portion region and the temperature in volatile element carrier region, thermocouple c and/or thermocouple d and/or
Thermocouple e, thermocouple b.
Further, the rotating mechanism driving motor and the retarder being connect with driving motor output shaft, the deceleration
Device output shaft rotates axis connection by shaft coupling and furnace body, and furnace body is limited by furnace body rotary shaft on stent.
Further, it is separated between the crucible and volatile element carrier by thermal insulation board.
Further, crucible supporting of the mating setting of the crucible with support and protective effect.
In above-mentioned technical proposal, a kind of dress of rotation vertical temperature gradient crystal growth after compound crystal synthesis is provided
It puts, including furnace body, synthesis is located in the furnace chamber of furnace body and is set with crystal growth system and mating synthesis with crystal growth system
Heating system, temp measuring system, heat-insulation system and control system, it is critical that furnace body it is mating be provided with for its rotation rotation
Mechanism has rotary freedom；The synthesis and crystal growth system includes crucible and volatile element carrier, crucible one
The position relationship that side is equipped with both seed crystal accommodating chamber, crucible and volatile element carrier is horizontal alignment placement, wherein, crucible water
The funnel-form of similar placement of droping to the ground, structure include the seed crystal accommodating chamber of horizontal strip, are connect with seed crystal accommodating chamber during placing flat
Synthesis and crystal growth portion, injection be inserted into hole；Volatile element carrier is provided with ascending pipe, and ascending pipe passes through injection to be inserted into hole
It stretches in crucible.During using the present apparatus, volatile element assembling is carried in volatile element carrier, and by volatile element
Device is sealed.Seed crystal is put into the seed crystal accommodating chamber of crucible, simple metal and boron oxide are placed in crucible, wherein each substance
Amount need to control the amount of simple metal element be after heating fusing the metallic element melt height that is formed in seed crystal accommodating chamber hereinafter, not
It is contacted with seed crystal；Height is higher than seed crystal accommodating chamber after boron oxide melted by heat is complete, and so as to cover seed crystal, volatile element leads to after being heated
It crosses ascending pipe and enters metallic element melt, realize horizontal injection synthesis, form compound melt, the amount of compound melt will ensure
It is not contacted with seed crystal.Importantly, after the completion of horizontal injection synthesis, start rotating mechanism, control furnace body is rotated by 90 °, in stove
The Temperature Distribution of each heat affected zone is adjusted in body rotary course simultaneously, ensures that the temperature at seed crystal end is less than the fusing point of seed crystal, furnace body
By horizontally rotating for vertical direction, volatile element carrier is located above at this time, and crucible is located at lower section, compound melt and seed crystal
Contact, after furnace body is in vertical, the Temperature Distribution for adjusting each heat affected zone again ensures that realization is hung down in crystal growing crucible
Vertical ladder degree crystal growth.
The beneficial effects of the utility model are：Vertical gradient crystal growth is rotated after Opacity in lens provided by the utility model
The ingenious setting furnace body of device rotary system, control the change in location of volatile element support container and crystal growing crucible, it is real
Horizontal injection synthesis and the ingenious combination of vertical gradient growing method are showed；Without the VGF crystal life after injection method synthesis
Polycrystal material is put into before length, simplifies technique, seed crystal is melted by simple metal before avoiding VGF growths；Apparatus structure is simple, is easy to grasp
Make and control, synthesized semiconductor crystal controlled shape, quality are uniform, conducive to the industrialization production of semiconductor crystal.
Description of the drawings
Fig. 1 is overall structure diagram of the present apparatus furnace body on stent；
Fig. 2 is long crucible structure schematic diagram when the present apparatus is horizontal positioned；
Fig. 3 is the schematic diagram of the horizontal positioned stock stage Opacity in lens growing system of the present apparatus；
Fig. 4 is the schematic diagram of the horizontal positioned synthesis phase Opacity in lens growing system of the present apparatus；
Schematic diagrames of the Fig. 5 for Opacity in lens growing system after the horizontal positioned synthesis of the present apparatus；
Fig. 6 is the schematic diagram of VGF crystal growth phase Opacity in lens growing systems after present apparatus rotation is vertical；
In figure, 1, thermocouple c；2nd, thermal insulation board；3rd, multistage heating device；4th, thermocouple b；5th, loading frame；5-1, sealing cover, 5-1-1,
Gas vent；6th, volatile element carrier；7th, volatile element；8th, ascending pipe；9th, crucible；9-1, seed crystal accommodating chamber；9-2, synthesis with
Crystal growth portion；Hole is inserted into 9-3, injection；10th, metallic element；11st, boron oxide；12：Thermocouple e；13rd, thermocouple d；14th, thermocouple a；
15th, seed crystal；16th, crucible supporting；17th, furnace body；17-1, furnace body rotary shaft；17-2, stent；18：Muff.
Specific embodiment
Vertical gradient crystal is rotated after Opacity in lens provided by the utility model is described in detail with specific embodiment below
The structure and application method of the device of growth, but the scope of protection of the utility model is not limited in any form, fields skill
Art personnel are changed according to the improvement that technical solution is carried out or similar replacement, should be included in the scope of protection of the utility model
Within.
Embodiment 1
The device of vertical temperature gradient crystal growth is rotated after being synthesized the present embodiment provides a kind of compound crystal, referring to figure
1, apparatus structure include furnace body 17, the synthesis being located in furnace body 17 and crystal growth system and its mating heating system,
Temp measuring system, heat-insulation system and control system, furnace body 17 set Packed lid, form seal cavity, are equipped in furnace body 17
Synthesis and crystal growth system, heating system is set in Opacity in lens growing system periphery, for synthesis and crystal growth system
Each section of system accurately heats, and the present embodiment uses multistage heating device 3；Heat-insulation system is arranged on heating system outer layer, this implementation
Example is muff 18, for synthesis and crystal growth system integral heat insulation；Temp measuring system can be multiple thermocouples, dispersion or
It is interspersed to be arranged in synthesis and crystal growth system and heating system or heat-insulation system structure, for the real time measure corresponding region
Temperature, in the present embodiment, the temp measuring system structure includes being respectively used to measure seed crystal in crystal growing crucible 9 and accommodates
The thermocouple a 14 of chamber 9-1 regional temperatures, thermocouple c 1 and heat for measuring synthesis and crystal growth portion 9-2 regional temperatures
Galvanic couple d 13 and thermocouple e 12, the thermocouple b 4 for measuring 6 regional temperature of volatile element carrier；Control system is used for
Receiving and transmitting signal, Comprehensive Control coordinates heating system, temp measuring system etc., specifically, can be PLC controller.
Key Design as the present embodiment, which is that the furnace body 17 is mating, is provided with rotating mechanism, so as to realize furnace body
17 rotation, the positioning of furnace body 17 and rotating mechanism and connection relation, rotating mechanism can be selected conventional rotation, in the present embodiment,
Referring to Fig. 1, furnace body 17 is limited by furnace body rotary shaft 17-1 on stent 17-2, and the rotating mechanism includes driving motor
The retarder being connect with driving motor output shaft, the reducer output shaft connect by shaft coupling and furnace body rotary shaft 17-1
It connects, so as to control the rotation of furnace body 17.
The synthesis includes crucible 9 and the volatile element carrier 6 for being arranged on its horizontal side with crystal growth system,
Wherein, the funnel-form of similar placement of droping to the ground when crucible 9 is horizontal positioned, referring to Fig. 2, structure includes being arranged on the water of side shape
Flat rectangular-shape or the seed crystal accommodating chamber 9-1 of cylindric grade, with the seed crystal accommodating chamber 9-1 synthesis connecting and crystal growth portion 9-2,
Hole 9-3 is inserted into injection, and injection insertion tube 9-3 is located at synthesis and the top or end of crystal growth portion 9-2, and diameter needs to protect
After card synthesis, lower edge of the compound melt height less than injection insertion tube 9-3, so as to will not occur compound melt from
Inject insertion tube 9-3 outflow crucibles 9；Volatile element carrier 6 is provided with ascending pipe 8, and ascending pipe 8 passes through injection to be inserted into hole 9-3
It stretches in crucible 9, the volatile element 7 in volatile element carrier 6 is heated to be entered by ascending pipe 8 in crucible 9, with crucible 9
Metal bath can realize horizontal injection synthesis；After synthesis, rotating mechanism makes furnace body 17 by rotating horizontally as vertical state,
The Temperature Distribution of each heat affected zone is adjusted, ensures that the temperature in seed crystal accommodating chamber 9-1 is less than the fusing point of seed crystal 15, treats at furnace body 17
After vertical, the Temperature Distribution for adjusting each heat affected zone again ensures that the compound melt in crucible 9 contacts realization with seed crystal 15
Vertical gradient crystal growth.
To avoid the rotation of furnace body 17 that the compound melt in crucible 9 is caused to pour in down a chimney to volatile element carrier 6, the note
Enter pipe 8 and be set as multisection type, such as bending shape in Fig. 3, end segment parts tilting is far from volatile element carrier 6, it is preferable that latter end
It is partially away from volatile element carrier 6 and with its lateral edge line in 60 ° of -85 ° of angles.
To be further ensured that the stability of synthesis and crystal growth system, also wrapped in the synthesis and crystal growth system
The loading frame 5 for loading the crucible 9 and volatile element carrier 6 is included, referring to Fig. 3 to Fig. 6, loading frame 5 can be quartz, carbonization
Silicon, boron nitride or ceramic material, the mating setting sealing cover 5-1 of loading frame 5, sealing cover 5-1 are equipped with exhaust outlet 5-1-1.
When assembling device, the injection that the ascending pipe 8 of volatile element carrier 6 is inserted into crucible 9 is inserted into the 9-3 of hole, volatile element carrying
Volatile element carrier 6 and crucible 9, are then put into togerther in loading frame 5, then by thermal insulation board 2 in 9 middle pad of device 6 and crucible
Sealing cover 5-1 is installed, makes sealing cover 5-1 and 5 fixed seal connection of loading frame, exhaust outlet 5-1-1 loads for balancing during synthesis
Air pressure in frame 5 is formed after can discharging volatile element injection metal bath in compound melt process, and pressure increases in loading frame 5
Add generated excessive gas.
It is separated between the crucible 9 and volatile element carrier 6 by thermal insulation board 2, on the one hand the setting of thermal insulation board 2 separates
Crucible 9 and volatile element carrier 6, avoid temperature from interacting；On the other hand, after the rotation of furnace body 17 is in vertical state, every
Hot plate 2 is supported on the upper surface of crucible 9, avoids volatile element carrier 6 and surprisingly falls into crucible 9.
The mating setting crucible supporting 16 of crucible 9, whole to seed crystal accommodating chamber 9-1 and crucible 9 have support and protection
Effect.
Embodiment 2
As different from Example 1, ascending pipe 8 is " Yi shape " multistage pipe in the present embodiment, and end is away from volatilization member
Plain carrier 6.
The loading pipe 5 is quartz material.
Illustrate the specifically used method of device provided by the utility model by taking embodiment 1 as an example：
The first step：Stock and device assembling are carried out first.Furnace body 17 is horizontal positioned, and volatile element 7 is assembled in volatilization member
In plain carrier 6, and volatile element carrier 6 is sealed.Seed crystal 15, metallic element 10 and boron oxide 11 are placed into crucible
In 9, then injection is passed through to be inserted into hole 9-3 the ascending pipe 8 of volatile element carrier 6 and be inserted into crucible 9, then in volatile element
Upper thermal insulation board 2 is padded between carrier 6 and crucible 9, crucible supporting 16 is set around the seed crystal accommodating chamber 9-1 of crucible 9, for protecting
Seed crystal accommodating chamber 9-1 and support crucible are protected, then volatile element carrier 6 and crucible 9 are put into togerther to the loading frame 5 of ceramic material
It is interior, sealing cover 5-1 and loading frame 5 are assembled together later, are integrally put into furnace chamber.The amount for controlling each substance is as follows：Metal
The amount of element 10 be ensure metal molten after the completion of formed metal bath height in seed crystal accommodating chamber 9-1 hereinafter, not with seed crystal
15 contacts；Height so as to cover seed crystal 15, while ensures to volatilize higher than seed crystal accommodating chamber 9-1 after 11 melted by heat of boron oxide is complete
The compound melt formed after the volatilization injection synthesis of element 7 is not contacted with seed crystal 15, referring to Fig. 3.
Second step：Protective gas is filled with, guarantee carries out protective gas pressure when synthesis and crystal growth and is more than compound
The dissociation pressure of melt.For example, usually indium phosphide usually ensures as 4.0MPa.
Third walks：Start heating system, according to the property of metallic element 10 needed for synthesized semiconducting compound, with more
Section heater 3 is heated, and is accurately heated up to 9 region of crucible, and metallic element 10 and boron oxide 11 are heated and become liquid, shape
Into metal bath, 11 sealing metal melt of boron oxide and seed crystal 15.
4th step：Then 6 region of volatile element carrier is heated with multistage heating device 3, volatile element 7 by
Heat volatilization is injected into the metal bath in crucible 9, as shown in figure 4, being added by control system to the monitoring of thermocouple 2 and to multistage
The regulation and control of hot device 3 are adjusted to suitable charge velocity, ensure pressure in volatile element carrier 6 higher than compound melt from
It decompresses, in building-up process, is overflowed after being injected due to volatile element 7, extra volatilization gas can be discharged by exhaust outlet 5-1-1.
5th step：With the progress of synthesis, the melt volume in crucible 9 is continuously increased, but not is contacted with seed crystal 15.It closes
To further regulating and controlling into trip temperature after, melt is stood so that the boron oxide 11 in ascending pipe 8 is instilled in melt, as schemed
Shown in 5.
6th step：Driving motor is opened, entire furnace body 17 is driven slowly to revolve by retarder control furnace body rotary shaft 17-1
Vertical state is gone to, the speed of rotation is such as rotated with the speed of 30 °/h, as shown in Figure 6.During rotation, the temperature of each warm area is adjusted
Degree ensures seed crystal 15 not by Melt molten.Further 9 region of crucible is adjusted into trip temperature with multistage heating device 3, in seed
Crystalline substance 15, by regulating and controlling multistage heating device 3, hangs down with establishing temperature gradient in compound melt contacts interface and compound melt
Vertical ladder degree crystal growth.
Summary finds that apparatus structure simple and compact provided by the utility model, precision is high, and operation is easy, easily
In control, Opacity in lens growth efficiency is high, and extensive crystal is suitble to prepare.
Claims (9)
1. vertical temperature gradient crystal growing apparatus is rotated after a kind of compound crystal synthesis, including furnace body（17）, be located in stove
The synthesis of intracavitary and crystal growth system and its mating heating system, temp measuring system, heat-insulation system and control system, feature
It is, the synthesis includes side with crystal growth system and is equipped with seed crystal accommodating chamber（9-1）Crucible（9）It is horizontal with its is arranged on
The volatile element carrier of side（6）, the volatile element carrier（6）By ascending pipe（8）With crucible（9）Water is realized in connection
Flat injection synthesis；The furnace body（17）There is rotary freedom by mating rotating mechanism, revolved after the injection synthesis of realization level
Turn vertical temperature gradient crystal growth.
2. the apparatus according to claim 1, which is characterized in that the ascending pipe（8）End, which deviates from, or tilting is separate waves
Send out element carrier（6）.
3. the apparatus of claim 2, which is characterized in that the ascending pipe（8）For multisection type, latter end tilting is separate
Volatile element carrier（6）, with volatile element carrier（6）In 60 ° of -85 ° of angles.
4. the apparatus according to claim 1, which is characterized in that further included in the synthesis and crystal growth system and load institute
State crucible（9）With volatile element carrier（6）Loading frame（5）, the loading frame（5）Mating setting sealing cover（5-1）, sealing
Lid（5-1）It is equipped with exhaust outlet（5-1-1）.
5. device according to claim 4, which is characterized in that the loading frame（5）For quartz, silicon carbide, boron nitride or
Ceramic material.
6. the apparatus according to claim 1, which is characterized in that the heating system structure includes being set in synthesis and crystalline substance
The multistage heating device of body growing system periphery（3）；The heat-insulation system structure includes being set in the heat preservation outside heating system
Set（18）.
7. the apparatus according to claim 1, which is characterized in that the temp measuring system structure includes being respectively used to measure earthenware
Crucible（9）Interior seed crystal accommodating chamber（9-1）Region, synthesis and crystal growth portion（9-2）Region and volatile element carrier（6）Region
The thermocouple a of temperature（14）, thermocouple c（1）And/or thermocouple d（13）And/or thermocouple e（12）, thermocouple b（4）.
8. the apparatus according to claim 1, which is characterized in that the rotating mechanism driving motor and with driving motor export
The retarder of axis connection, the reducer output shaft is by shaft coupling and furnace body rotary shaft（17-1）Connection, furnace body（17）By
Furnace body rotary shaft（17-1）Limiting is in stent（17-2）On.
9. the apparatus according to claim 1, which is characterized in that the crucible（9）With volatile element carrier（6）Between borrow
Help thermal insulation board（2）It separates；The crucible（9）Crucible supporting of the mating setting with support and protective effect（16）.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721699541.3U CN207596994U (en) | 2017-12-08 | 2017-12-08 | Vertical temperature gradient crystal growing apparatus is rotated after a kind of compound crystal synthesis |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721699541.3U CN207596994U (en) | 2017-12-08 | 2017-12-08 | Vertical temperature gradient crystal growing apparatus is rotated after a kind of compound crystal synthesis |
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| CN207596994U true CN207596994U (en) | 2018-07-10 |
Family
ID=62764805
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721699541.3U Withdrawn - After Issue CN207596994U (en) | 2017-12-08 | 2017-12-08 | Vertical temperature gradient crystal growing apparatus is rotated after a kind of compound crystal synthesis |
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| CN (1) | CN207596994U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108360060A (en) * | 2017-12-08 | 2018-08-03 | 中国电子科技集团公司第十三研究所 | Vertical temperature gradient crystal growing apparatus is rotated after a kind of synthesis of compound crystal |
| US10519563B2 (en) | 2017-12-08 | 2019-12-31 | The 13Th Research Institute Of China Electronics Technology Group Corporation | Device and method for continuous VGF crystal growth through rotation after horizontal injection synthesis |
-
2017
- 2017-12-08 CN CN201721699541.3U patent/CN207596994U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108360060A (en) * | 2017-12-08 | 2018-08-03 | 中国电子科技集团公司第十三研究所 | Vertical temperature gradient crystal growing apparatus is rotated after a kind of synthesis of compound crystal |
| CN108360060B (en) * | 2017-12-08 | 2019-07-09 | 中国电子科技集团公司第十三研究所 | Vertical temperature gradient crystal growing apparatus is rotated after a kind of synthesis of compound crystal |
| US10519563B2 (en) | 2017-12-08 | 2019-12-31 | The 13Th Research Institute Of China Electronics Technology Group Corporation | Device and method for continuous VGF crystal growth through rotation after horizontal injection synthesis |
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Granted publication date: 20180710 Effective date of abandoning: 20190709 |
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