CN207573264U - A kind of electricity energy harvester of the double localization characteristics of application phonon crystal containing defect beam - Google Patents
A kind of electricity energy harvester of the double localization characteristics of application phonon crystal containing defect beam Download PDFInfo
- Publication number
- CN207573264U CN207573264U CN201721571929.5U CN201721571929U CN207573264U CN 207573264 U CN207573264 U CN 207573264U CN 201721571929 U CN201721571929 U CN 201721571929U CN 207573264 U CN207573264 U CN 207573264U
- Authority
- CN
- China
- Prior art keywords
- phonon crystal
- defects
- electricity energy
- energy harvester
- containing defect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Micromachines (AREA)
Abstract
The utility model discloses a kind of electricity energy harvesters of the double localization characteristics of application phonon crystal containing defect beam.Including containing defect phonon crystal beam and piezoelectric material, phonon crystal beam is the period is alternately arranged the cantilever beam formed in the longitudinal direction by two kinds of material cells, the beam of phonon crystal containing defect at least one existing defects in the material cell of fixing end, piezoelectric material are located in the material cell of existing defects.The electricity energy harvester of the utility model using phonon crystal girder construction point defects to bending wave localization the defects of step response and band gap by energy localization front end (close to vibration source) double localized effect, the special efficacy of other corresponding peak power outputs of passband formant is much larger than using the maximum power that output is acquired under defect state frequency, the piezoelectric layer of piezoelectric material is exported alternating voltage by mechanical stress, realizes the acquisition of energy.
Description
Technical field
The utility model belongs to mechanical energy acquisition field more particularly to a kind of double locals of application phonon crystal containing defect beam
Change the electricity energy harvester of characteristic.
Background technology
Phonon crystal is a kind of periodic structure with elastic wave or acoustic band gap.The band gap properties table of phonon crystal
Bright, corresponding elastic wave or sound wave are propagated in periodic structure and can be suppressed in the range of bandgap frequency.When perfect type phonon
When the periodicity of crystal is by destroying, it is possible to defect state occur in original band gap.Defect state is passband, corresponding bullet
Property wave or sound wave can the localizations or along line defect direction direction propagation at the point defect of phonon crystal.
Mechanical vibrational energy is ubiquitous, these vibrational energies may all be collected together and be set applied to the electronics of low-power
It is standby.Most of piezoelectric energy collector employs cantilever beam structure, and acquisition position is generally arranged next to vibration source.Piezoelectric energy
Self-powered system of the acquisition technique as a kind of long-term or even unlimited life cycle (for example can shake the energy of nature
Energy) electronic equipment that electric energy is applied to low-power is acquired and be converted into, advantageously account for conventional batteries service life
The problems such as short, frequent replacement and space occupancy.Most of piezoelectric energy collector employs cantilever beam structure, but it is acquired
Resonant frequency and acquisition position it is single and output power is smaller.At present, a large amount of scholar has used the piezoelectricity of piezoelectric material
Effect acquires the energy in structure.When the piezoelectric layer of piezoelectric material is by mechanical stress, the dynamic strain of piezoelectric layer can lead to
It crosses electrode and directly exports alternating voltage, the quantity of electric charge that piezoelectric layer generates is proportional to the strain that it is generated.The utility model
The beam energy collecting device of phonon crystal containing defect of design takes full advantage of under defect state frequency great dynamic strain spy at point defect
It puts to carry out piezoelectric energy acquisition, while taken into account phonon-side bands by energy localization in front end and by collector close to vibration source cloth
It puts, so as to reach highly efficient energy output under double effect.
Invention content
The purpose of the utility model is to overcome the deficiencies in the prior art, provide a kind of application phonon crystal containing defect beam double offices
The electricity energy harvester of domain characteristic.
The electricity energy harvester of the double localization characteristics of a kind of application phonon crystal containing defect beam, including containing defect phonon crystal
Beam and piezoelectric material, the phonon crystal containing defect beam are that the period is alternately arranged group in the longitudinal direction by two kinds of material cells
Into cantilever beam, the size of two of which material cell is identical, the phonon crystal beam close to one end of fixing end at least
One material cell existing defects, the piezoelectric material are located in the material cell of existing defects.
Preferably, the defects of described is point defect, and the defects of material cell of existing defects is that the thickness of material is lowered；
The material cell of the existing defects is located on first lattice (to be counted), but cannot be directly connected to fixing end from fixing end.
Preferably, ten times or more are differed in the Young's modulus of two kinds of material cells.
Preferably, the period of the cantilever beam is more than 8.
The planform of material cell (cantilever beam) can be cylinder, cuboid, triangular prism etc., but if be cylindricality,
Prism can cause analysis to complicate, and the moment of flexure and neutral axis in section complicate；It is convenient for calculating also just using the rectangular physical efficiency of rule
In excitation source excitation)；Material cell (cantilever beam) length to height ratio is bigger, and low frequency is got in the position of band gap and defect state.Piezoelectric membrane according to
It is attached in material cell by super glue.
The electricity energy harvester of the utility model lacks bending wave localization using phonon crystal girder construction point defects
Fall into step response and band gap by energy localization front end (close to vibration source) double localized effect, it is defeated using being acquired under defect state frequency
The maximum power gone out is much larger than the special efficacy of other corresponding peak power outputs of passband formant, exists to contain defect phonon crystal beam
The application in energy acquisition field provides a kind of new method.The utility model apparatus structure is rearranged by material cell, can be with
The position of meaning adjustment defective unit and defect shape can change the position of cantilever beam defect according to the frequency special efficacy of working environment,
Flexible design, wide application.The utility model overcomes resonant frequency and the acquisition of existing cantilever beam electricity energy harvester acquisition
Position is single and the smaller problem of output power, provides a kind of vibrational energy harvester of long time stability.
Description of the drawings
Fig. 1 is the specific embodiment of cantilever beam structure of the utility model containing defect.
Fig. 2 is the verification device of the vibrational energy harvester comprising the utility model.
The corresponding acquisition characteristics of Fig. 3 bit frequencies 400-1000Hz：(a) transmission curve；(b) different frequency is corresponding optimal defeated
Go out voltage；(c) the corresponding peak power output of different frequency.
Specific embodiment
The electricity energy harvester of the double localization characteristics of application phonon crystal containing defect beam of the utility model, including containing defect
Phonon crystal beam and piezoelectric material, the phonon crystal beam are that the period is alternately arranged in the longitudinal direction by two kinds of material cells
The cantilever beam of composition, the size of two of which material cell is identical, the phonon crystal beam close to one end of fixing end at least
There are one material cell existing defects, the piezoelectric material is located in the material cell of existing defects.
As shown in Figure 1, in a specific embodiment of the utility model, the cantilever beam of the utility model is 10 periods
The phonon crystal beam of aluminium/organic glass composition, wherein material 1 and material 2 represent aluminium and organic glass and corresponding size respectively
Parameter is 0.08m*0.015m*0.015m, and it is 0.08m* that defective material 3, which is organic glass and corresponding dimensional parameters,
0.015m*0.008m.The density of aluminium 6061 is 2735kg/m3, Young's modulus 7.47*1010Pa, the density of organic glass are
1142kg/m3, Young's modulus 4.5*109Pa, the Poisson's ratio of two kinds of materials is all 0.33.Piezoelectric material is thin using PVDF piezoelectricity
Film, on defective material 3.
The defects of cantilever beam structure, state showed as in transmission curve occurring a formant in band gap.The utility model utilizes
The defects of fiber grating measuring technique test measurement obtains Fig. 1 center sill structures state.The utility model is controlled in real time using dSPACE
System connection voltage amplifier input accumulation signal gives piezoelectric stack ceramic actuator, and actuator is located at cantilever beam fixing end bottom
End, the vibration of beam response of excitation phonon crystal.The fiber grating displacement sensor being connected with girder construction free end experiences vibration
Lead to change in displacement, generate the displacement signal of variation by fiber grating sensing system be input to dSPACE real-time control systems into
Row data acquisition and procession.The defects of beam of phonon crystal containing point defect is found by fiber grating measuring technique state frequency location
Afterwards, by piezoelectric membrane PVDF (LDT0-028K/L, Measurement Specialties, USA) along x-axis direction (length side
To) be pasted onto at 3 upper surface of defective material (such as Fig. 1), the output electrode of PVDF is connect with an extraneous impedance (resistance box), is led to
It crosses and measures the voltage at extraneous impedance both ends to calculate the output power of acquisition.It is using signal generator input amplitude in experiment
The sinusoidal voltage of a certain frequency of 1V is conveyed to piezoelectric stack ceramic actuator by power amplifier, and amplifier multiplying power is 15
Times, it is being responded close to the girder construction end of defective material 3 by piezoelectric stack ceramic actuator excited vibrational.Vibrational energy acquisition
Integral erection figure refers to Fig. 2.
It can be expressed from the next in the output power that body structure surface is acquired using PVDF：
Above formula ω is circular frequency, btIt is the width of piezoelectric material, ltBe piezoelectric material along the x-axis direction on length, d31It is
The piezoelectric constant of " 31 " direction, that is, X direction, Y are the Young's modulus of piezoelectric material,It is averagely should in piezoelectricity area coverage
Become, CpIt is the capacitance of piezoelectric material, R is external impedance.
If to obtain maximum output power value under a certain vibration frequency, optimal external impedance size should be at this time
R*=1/ ω Cp (2)
Shown in the obtained transmission curve such as Fig. 3 (a) measured using the experiment of fiber grating measuring technique, can clearly it see
The defects of occurring in first band gap state frequency is about 615Hz.According to formula (2) it is found that defect state 615Hz is corresponding optimal outer
Connecting resistance is 517.6k Ω, measurement obtain corresponding optimal output voltage and peak power output be respectively 169.4mV and
55.4nW.Finally experiment measures the corresponding maximum acquisition performance number of each frequency between 400Hz-1000Hz, as a result sees Fig. 3
(b) and Fig. 3 (b).In the case where acquiring structure determination, formula (1) teaches that maximum output power can be with frequency
Increase and increase.And Fig. 3 shows output voltage under defect state 615Hz and power much larger than neighbouring frequency range (particularly one
As passband resonant frequency) output voltage and power because the beam surface strain response that PVDF pastes under defect state is big, this embodiment
The characteristic of Dimension Phononic Crystal with Defects energy localization.
Claims (5)
1. the electricity energy harvester of the double localization characteristics of a kind of application phonon crystal containing defect beam, it is characterised in that including containing defect
Phonon crystal beam and piezoelectric material, the phonon crystal containing defect beam are that the period hands in the longitudinal direction by two kinds of material cells
For the cantilever beam rearranged, the size of two of which material cell is identical, and the phonon crystal containing defect beam is close to fixed
At least one existing defects in the material cell at end, and it is described the defects of be not located at as in the material cell of fixing end, institute
The piezoelectric material stated is located in the material cell of existing defects.
2. electricity energy harvester according to claim 1, it is characterised in that it is described the defects of incorporation way for reduce material
The thickness of material unit.
3. electricity energy harvester according to claim 1, it is characterised in that the Young's modulus of two kinds of material cells
Ten times or more of difference.
4. electricity energy harvester according to claim 1, it is characterised in that the period of the cantilever beam is more than 8.
5. electricity energy harvester according to claim 1, it is characterised in that the shape of two kinds of material cells is
Rectangle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721571929.5U CN207573264U (en) | 2017-11-22 | 2017-11-22 | A kind of electricity energy harvester of the double localization characteristics of application phonon crystal containing defect beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721571929.5U CN207573264U (en) | 2017-11-22 | 2017-11-22 | A kind of electricity energy harvester of the double localization characteristics of application phonon crystal containing defect beam |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207573264U true CN207573264U (en) | 2018-07-03 |
Family
ID=62691573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721571929.5U Expired - Fee Related CN207573264U (en) | 2017-11-22 | 2017-11-22 | A kind of electricity energy harvester of the double localization characteristics of application phonon crystal containing defect beam |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207573264U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107968599A (en) * | 2017-11-22 | 2018-04-27 | 浙江大学 | Using the electricity energy harvester and method of the double localization characteristics of the beam of phonon crystal containing defect |
| CN113113092A (en) * | 2021-03-25 | 2021-07-13 | 同济大学 | Design method of variable-capacitance piezoelectric cantilever beam phononic crystal plate |
-
2017
- 2017-11-22 CN CN201721571929.5U patent/CN207573264U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107968599A (en) * | 2017-11-22 | 2018-04-27 | 浙江大学 | Using the electricity energy harvester and method of the double localization characteristics of the beam of phonon crystal containing defect |
| CN113113092A (en) * | 2021-03-25 | 2021-07-13 | 同济大学 | Design method of variable-capacitance piezoelectric cantilever beam phononic crystal plate |
| CN113113092B (en) * | 2021-03-25 | 2022-11-18 | 同济大学 | Design method of variable-capacitance piezoelectric cantilever beam phononic crystal plate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107968599A (en) | Using the electricity energy harvester and method of the double localization characteristics of the beam of phonon crystal containing defect | |
| Wang et al. | Acoustic energy harvesting by piezoelectric curved beams in the cavity of a sonic crystal | |
| Hong et al. | Theoretical analysis and experimental study of the effect of the neutral plane of a composite piezoelectric cantilever | |
| EP2777082B1 (en) | Piezoelectric energy harvesting device or actuator | |
| Luo et al. | Design and analysis of a MEMS-based bifurcate-shape piezoelectric energy harvester | |
| Le Scornec et al. | Self-powered communicating wireless sensor with flexible aero-piezoelectric energy harvester | |
| CN207573264U (en) | A kind of electricity energy harvester of the double localization characteristics of application phonon crystal containing defect beam | |
| CN203278696U (en) | Multiple cantilever wideband MEMS piezoelectric energy harvester | |
| Abas et al. | Electrode effects of a cellulose-based electro-active paper energy harvester | |
| Lin et al. | Investigation of resonant and energy harvesting characteristics of piezoelectric fiber composite bimorphs | |
| Fernandes et al. | Design, fabrication, and testing of a low frequency MEMS piezoelectromagnetic energy harvester | |
| US8884496B2 (en) | Fluid current energy capture apparatus and method | |
| Hu et al. | High power density energy harvester with non-uniform cantilever structure due to high average strain distribution | |
| Castagnetti | A wideband fractal-inspired piezoelectric energy converter: design, simulation and experimental characterization | |
| Wang et al. | Design and analysis of a hollow triangular piezoelectric cantilever beam harvester for vibration energy collection | |
| Bhuvana et al. | Design and analysis of piezoelectric cantilever based vibration sensor | |
| Ravanbod et al. | Perforated auxetic honeycomb booster with reentrant chirality: A new design for high-efficiency piezoelectric energy harvesting | |
| CN107147332A (en) | The broad band low frequency vibration energy collector and method of piezoelectric beam lumped mass interphase structure | |
| Borzea et al. | Piezoelectric harvester performance analysis for vibrations harnessing | |
| Wang et al. | Optimal road piezoelectric energy harvester design based on a free-end simply supported beam structure | |
| CN206878724U (en) | The broad band low frequency vibration energy collector of piezoelectric beam lumped mass interphase structure | |
| Yun et al. | The vibrating piezoelectric cantilevered generator under vortex shedding excitation and voltage tests | |
| Khalatkar et al. | Modeling and simulation of cantilever beam for optimal placement of piezoelectric actuators for maximum energy harvesting | |
| CN109617452A (en) | A kind of combined type piezoelectric harvester device of subsidiary quality frame | |
| Wang et al. | The performance of a piezoelectric cantilevered energy harvester with an imperfectly bonded interface |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180703 Termination date: 20211122 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |