CN207490887U - IGBT high-frequency soft switch drives thick film - Google Patents
IGBT high-frequency soft switch drives thick film Download PDFInfo
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- CN207490887U CN207490887U CN201721225247.9U CN201721225247U CN207490887U CN 207490887 U CN207490887 U CN 207490887U CN 201721225247 U CN201721225247 U CN 201721225247U CN 207490887 U CN207490887 U CN 207490887U
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Abstract
IGBT high-frequency soft switch drives thick film, IGBT driving thick films receive the PWM waveform that slave device master control borad is sent out, PWM waveform drives photoelectrical coupler, drive control module sends a control signal to soft switching control module after receiving the output signal of photoelectrical coupler, soft switching control module sends drive signal to push-pull amplifier under driving control signal effect, and push-pull amplifier provides grid current by grid open resistance or gate turn-off resistance according to the control signal behavior of input to IGBT.Relative to the prior art, the utility model circuit signal delay time is short, and working frequency can reach 250kHZ, has filled up the market vacancy of the induction heating apparatus of 100kHZ to 250kHZ, has met the market demand；With powerful driving force；Using light-coupled isolation, isolation effect is good；With outstanding fault feedback circuit, down pulse block is quick, and fault-signal can return lock driving pulse, and realizes overcurrent protection and the drop advanced soft turn-off function of grid voltage；Devise outstanding IGBT drive circuit, solve the problems, such as IGBT fast switching powers loss, realize IGBT high frequencies it is soft open, soft turn-off function, reduce IGBT turn on process in overcurrent, reduce IGBT turn off process in overvoltage；Hardware circuit Highgrade integration, makes that the utility model is small, output pulse width is unrestricted.
Description
Technical field
The utility model is related to IGBT drive circuits, and in particular to IGBT high-frequency soft switch drives thick film.
Background technology
The late 1980s, as the devices such as MOSFET, IGBT, SIT occur in succession, Power Electronic Technique obtains again
Secondary development.It has begun IGBT and MOSFET to be used to open as main power on a large scale to the early 21st century induction heating apparatus
Close device.Domestic and international IGBT is mainly used for higher power device, and MOSFET is mainly used for high-frequency device.Usually induction power supply is pressed
Frequency range can be divided into：Low frequency (below 500Hz), intermediate frequency (1KHz ~ 10KHz), superaudio (20KHz ~ 40KHz), high frequency
(40KHz ~ 200KHz), hyperfrequency (more than 200KHz).
Induction heating technique is swifter and more violent in development abroad, and especially American-European and Japan and other countries, they are in sensing heating
Field substantially represents the exploitation aspect of high frequency and hyperfrequency product the highest application level on induction heating technique.State
The induction heating apparatus that outer certain companies are designed using IGBT can accomplish power frequency reaches simultaneously more than 1000KW
50kHZ；Several kilowatts of power is can be designed that using MOSFET while frequency can reach the sense of more than 500kHZ or even youngster megahertz
Answer heating unit.But it is high-power, working frequency is a market vacancy in the induction heating apparatus of 100kHZ to 250kHZ, and
And the market demand is very big.
Utility model content
In order to solve the above technical problems, the utility model provides IGBT high-frequency soft switch driving thick film.
The technical solution of the utility model is specially：
IGBT high-frequency soft switch drives thick film：Electric coupler and soft switching control module are all connect with drive control module,
Soft switching control module connects push-pull amplifier, and grid open resistance, gate turn-off resistance connect push-pull amplifier respectively
Two output terminals, the conducting of grid open resistance output terminal, push-pull amplifier input terminal are low during push-pull amplifier input terminal high level
Gate turn-off resistance output terminal is connected during level.
Further：The connection load of IGBT emitters, IGBT collectors connection external power supply.
Further：VCE voltage detection modules are further included, IGBT collectors are connected to by the diode of two series connection
VCE voltage detection modules, soft switching control module and VCE voltage detection modules carry out signal and connect.
Further：Failure feedback module is further included, failure feedback module receives the signal of VCE voltage detection modules and leads to
Opto-coupled feedback fault-signal is crossed to equipment master control borad.
Further：Drive control module and failure feedback module are integrated in one piece of modular circuit.
Further：Power supply support module is further included, power supply support module is failure support module, drive control module carries
Power supply source is supported.
Further：Under-voltage protective module and power supply support module are further included, under-voltage protective module detection power supply supports mould
The power supply signal of block simultaneously sends a control signal to soft switching control module.
Relative to the prior art, the technique effect of the utility model is：
Circuit signal delay time is short, and working frequency can reach 250kHZ, has filled up the sensing of 100kHZ to 250kHZ
The market vacancy of heating unit, meets the market demand；With powerful driving force；Using light-coupled isolation, isolation effect is good；
With outstanding fault feedback circuit, down pulse block is quick, and fault-signal can return lock driving pulse, and realize overcurrent
Protection and the drop advanced soft turn-off function of grid voltage；Outstanding IGBT drive circuit is devised, solves IGBT fast switching powers damage
Consumption problem, realize IGBT high frequencies it is soft open, soft turn-off function, reduce IGBT turn on process in overcurrent, reduce IGBT shutdown
Overvoltage in the process；Hardware circuit Highgrade integration, makes that the utility model is small, output pulse width is unrestricted.
Description of the drawings
Fig. 1 is gate charge measured waveform figure.
Fig. 2 is the schematic diagram of the utility model.
Detection waveform figure when Fig. 3 is the utility model short-circuit protection.
Specific embodiment
As shown in Fig. 2, IGBT high-frequency soft switch drives thick film, IGBT driving thick films receive what slave device master control borad was sent out
PWM waveform, PWM waveform driving photoelectrical coupler, drive control module are sent after receiving the output signal of photoelectrical coupler
Signal is controlled to soft switching control module, soft switching control module sends drive signal to recommending under driving control signal effect
Amplifier, push-pull amplifier pass through grid open resistance Rg according to the control signal behavior of input（on）Or gate turn-off resistance
Rg（off）Grid current is provided to IGBT.
The normal opening processes of IGBT：IGBT driving thick films receive the PWM waveform that slave device master control borad is sent out, and input signal is
During high level, upper tube conducting is recommended in drive signal photoelectrical coupler conducting, IGBT drivings, and down tube cut-off driver is defeated by upper tube
Outlet and grid open resistance Rg（on）Grid current is provided to IGBT, is allowed to be connected rapidly, VCE drops to VCES (about 3V).
VCE voltage detecting points current potential by case position in 4V or so, be failure to actuate by protection circuit simultaneously.
IGBT normal turn-off processes：When master control borad PWM input signals are low level, the cut-off of drive signal optocoupler makes
Down tube conducting, upper tube cut-off are recommended in IGBT drivings, and driver passes through down tube output terminal and gate turn-off resistance Rg（off）By IGBT
VGE voltages are pulled low to rapidly negative 5V, rapidly switch off IGBT.Simultaneously by internal circuit by VCE voltage detecting point current potentials by case
It is failure to actuate in 0V or so, protection circuit position.
The switching loss in hard shutdown processing wherein can be effectively avoided using the processing shutdown action of soft switching control module
With the safety of protection IGBT original papers, the stability for improving equipment enhances driveability.
The utility model also has VCE voltage detection modules, failure feedback module, and IGBT collectors pass through two series connection
Diode be connected to VCE voltage detection modules, soft switching control module carries out signal with VCE voltage detection modules and connects, therefore
Barrier feedback module receives the signal of VCE voltage detection modules and passes through opto-coupled feedback fault-signal to equipment master control borad.
VCE voltage detection modules, the short-circuit protection process of failure feedback module：Drive signal is sent by high speed photo coupling isolation
To drive control logic unit, enable signal is controlled as drive signal.Since IGBT has the characteristic for moving back saturation, when IGBT is born
It when carrying RL infinite approachs zero, flows through IGBT collector currents and increased dramatically, at this time the VCEsat voltages raising of IGBT, VCE voltages
Detection circuit detects that IGBT electric currents are excessive, and there are overcurrent short-circuit conditions, and VCE voltage detecting circuits notice drive control is electric at this time
Road turns off drive signal, and at the same time giving fault-signal to equipment master control borad by opto-coupled feedback.VCE voltage detecting circuits are examined
Soft switching control circuit is notified simultaneously when measuring short circuit, overcurrent condition, by the way of soft switching, two of cut-out driving IGBT
The switching signal of pipe is recommended, so as to achieve the purpose that soft switching IGBT.（As shown in Figure 3）
The utility model also has under-voltage protective module and power supply support module, and under-voltage protective module detection power supply supports mould
The power supply signal of block simultaneously sends a control signal to soft switching control module.
The under-voltage protection process of under-voltage protective module and power supply support module：Under-voltage protective module detects power supply support module
Power supply status, when finding to occur under-voltage, under-voltage protective module sends under-voltage signal and IGBT is carried out to soft switching control module
Soft switching processing.
Equipment volume is reduced in order to improve the integrated level of circuit, failure feedback module and drive control module therein integrate
In one piece of modular circuit.
Above-described embodiment parameter calculation procedure：
1.1 determining IGBT gate charges and gate capacitance
For designing a driver, most important parameter is gate charge, in many cases, IGBT data
This parameter does not provide in handbook, in addition, charging process of the gate voltage in uphill process is not also described.No matter such as
What, in contrast the charging process of gate pole can be obtained simply by measuring.An IGBT is thus driven, in the design root
According to the gate voltage needed for IGBT in equipment application（Such as ± 15V）.
First, in the case where load end does not have output voltage, we can be calculated as below.Gate charge can utilize
Formula calculates：
Q=∫ idt=C Δs U
It is determined that Q can observe gate voltage, while the rising Δ U of voltage in the measurements also can be in oscillography with oscillograph
It is clearly observed on device.（See Fig. 1）
Utilize formula CIN=Q/ Δs U.Practical input capacitance can be obtained by calculation.
Empirical equation in conversion
Capacitance Ciss in IGBT handbooks is not a particularly useful parameter in actual circuit application, because
It is measured by electric bridge, and gate pole threshold voltage cannot be reached since measurement voltage is too small, increased in actual switch
Internal feedback effect（Miller effects）In being not included in the measurements.In measuring circuit, the voltage of a 25V is added in
It is smaller when surveying junction capacity than Vce=0V under this measurement framework on collector " C ".Therefore, Ciss is only
It can only be used when IGBT makes comparisons mutually.
For the INFINEON series IGBT of MITSUBISHI and EUPEC, empirical equation below is by verification
It is more accurate believable.
CIN=5Ciss（Ciss can be obtained from IGBT handbooks）
The calculating of 1.3 driving powers
The energy stored in junction capacity is inputted can be by being calculated as below：
W=CIN Δs U2
Here, Δ U is the entire voltage risen on gate pole.For example, under ± 15V driving voltages, Δ U is 30V.
In each work period, gate pole is electrically charged secondary.Driving power needed for one IGBT calculates as follows：
P=f CIN Δs U2
If gate charge had previously been obtained by measuring, then
P=f Q Δs U
This power is necessary when being each IGBT driving, but the charge and discharge of gate pole are no energy losses, this work(
Rate is actually lost in driving resistance and external circuit.
The gross output loss of DC/DC converters is typically to be added by a static, fixed loss in driver
Final drive loss composition.
The calculating of gate drive current
The maximum output current of driver is had to be larger than equal to actually required gate drive current.Calculation formula is as follows：
IGmax=ΔU/R G(min)
Δ U is entire gate pole raised voltage, such as ± 15V drivings, Δ U=30V.And RG (min) is selected in circuit
The minimum gate driving resistance selected.
Calculated examples
For the IGBT modules of a 300A, the BSM200GB120DN2 in the INFINEON series of EUPEC, work are selected
Working frequency is in 200KHZ.
First parameter gate charge measured waveform is as shown in Figure 1：
Q and Δ U values can be measured by oscillograph：
Q=2150nAs Δs U=30V
Gate capacitance CIN=Q/ Δs U=2150nAs/30V=71.6nF.
Required driving power：
P=f*Q* Δs U=200kHZ*2150nAs*30V=12.9W
Next, the internal power consumption plus 1W
12.9W+1W=13.9W
It is+15V that IGBT, which opens high voltage, during driving design, when turning off low-voltage -5V, is calculated also according to above.
Actually required driving power：
P=f*Q* Δs U=200kHZ*2150nAs*20V=8.6W
Next, the internal power consumption plus 1W
8.6W+1W=9.6W
The Ω of grid grade resistance RG in actual use=2.5, then
IGmax=Δ U/RG=20/2.5=8A
1.6 above-described embodiments drive thick film circuit function and parameter：
According to above-described analysis result, we devise a IGBT drivings that can meet our actual needs
Thick film circuit.Design parameter is as follows：
IGBT module driving voltage：Turning-on voltage+15V/ shutdown voltages -5V
Peak drive current：8A
It monitors VCEsat and short-circuit protection and overcurrent protection function is provided
Advanced soft turn-off function
Line under-voltage blocking function
Failure feedback function
Signal-isolated transmission
320nS conversion timing signals
110nS fault-signal feedback times
Above-described is only the preferred embodiment of the utility model, it is noted that for those skilled in the art
For, under the premise of the utility model general idea is not departed from, several changes and improvements can also be made, these should also be considered as
The scope of protection of the utility model.
Claims (7)
1.IGBT high-frequency soft switch drives thick film, it is characterised in that：Electric coupler and soft switching control module all with drive control
Module connects, soft switching control module connection push-pull amplifier, and grid open resistance, gate turn-off resistance connect push away respectively
Draw two output terminals of amplifier, grid open resistance output terminal conducting during push-pull amplifier input terminal high level, push-pull amplifier
Gate turn-off resistance output terminal is connected during input terminal low level.
2. IGBT high-frequency soft switch as described in claim 1 drives thick film, it is characterised in that：The connection load of IGBT emitters,
IGBT collectors connect external power supply.
3. IGBT high-frequency soft switch as described in claim 1 drives thick film, it is characterised in that：Further include VCE voltage detecting moulds
Block, IGBT collectors are connected to VCE voltage detection modules, soft switching control module and VCE electricity by the diode of two series connection
Detection module is pressed to carry out signal connection.
4. IGBT high-frequency soft switch as claimed in claim 3 drives thick film, it is characterised in that：Failure feedback module is further included,
Failure feedback module receives the signal of VCE voltage detection modules and passes through opto-coupled feedback fault-signal to equipment master control borad.
5. IGBT high-frequency soft switch as claimed in claim 4 drives thick film, it is characterised in that：Drive control module and failure are anti-
Feedback module is integrated in one piece of modular circuit.
6. IGBT high-frequency soft switch as claimed in claim 4 drives thick film, it is characterised in that：Power supply support module is further included,
Power supply support module provides power supply for failure support module, drive control module and supports.
7. IGBT high-frequency soft switch as described in claim 1 drives thick film, it is characterised in that：Further include under-voltage protective module and
Power supply support module, the power supply signal of under-voltage protective module detection power supply support module simultaneously send a control signal to soft switching control
Module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721225247.9U CN207490887U (en) | 2017-09-22 | 2017-09-22 | IGBT high-frequency soft switch drives thick film |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201721225247.9U CN207490887U (en) | 2017-09-22 | 2017-09-22 | IGBT high-frequency soft switch drives thick film |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108923623A (en) * | 2018-07-11 | 2018-11-30 | 佛山市众盈电子有限公司 | A kind of IGBT drive circuit |
| CN110474522A (en) * | 2019-08-19 | 2019-11-19 | 阳光电源股份有限公司 | A kind of more level analog driving circuits of I font and its soft breaking circuit |
| CN112130050A (en) * | 2020-11-19 | 2020-12-25 | 杭州飞仕得科技有限公司 | IGBT desaturation fault detection device |
-
2017
- 2017-09-22 CN CN201721225247.9U patent/CN207490887U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108923623A (en) * | 2018-07-11 | 2018-11-30 | 佛山市众盈电子有限公司 | A kind of IGBT drive circuit |
| CN110474522A (en) * | 2019-08-19 | 2019-11-19 | 阳光电源股份有限公司 | A kind of more level analog driving circuits of I font and its soft breaking circuit |
| CN110474522B (en) * | 2019-08-19 | 2020-11-10 | 阳光电源股份有限公司 | I-shaped multi-level analog driving circuit and soft turn-off circuit thereof |
| CN112130050A (en) * | 2020-11-19 | 2020-12-25 | 杭州飞仕得科技有限公司 | IGBT desaturation fault detection device |
| CN112130050B (en) * | 2020-11-19 | 2021-03-23 | 杭州飞仕得科技有限公司 | IGBT desaturation fault detection device |
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