CN207460131U - A kind of low consumption circuit that power supply positive and negative can be connect using metal-oxide-semiconductor realization - Google Patents
A kind of low consumption circuit that power supply positive and negative can be connect using metal-oxide-semiconductor realization Download PDFInfo
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- CN207460131U CN207460131U CN201721507157.9U CN201721507157U CN207460131U CN 207460131 U CN207460131 U CN 207460131U CN 201721507157 U CN201721507157 U CN 201721507157U CN 207460131 U CN207460131 U CN 207460131U
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Abstract
The utility model provides a kind of low consumption circuit that power supply positive and negative can be connect using metal-oxide-semiconductor realization, including current input terminal interface V1 and V2, current output terminal interface V3 and V4 and four metal-oxide-semiconductor Q1, Q2, Q3 and Q4, the metal-oxide-semiconductor Q1 and Q4 is N-type metal-oxide-semiconductor, and the metal-oxide-semiconductor Q2 and Q3 is p-type metal-oxide-semiconductor；The drain electrode of metal-oxide-semiconductor Q1 and source electrode difference connecting interface V1 and V4, the drain electrode of metal-oxide-semiconductor Q2 and source electrode difference connecting interface V2 and V3, the drain electrode of metal-oxide-semiconductor Q3 and source electrode difference connecting interface V1 and V3, the drain electrode of metal-oxide-semiconductor Q4 and source electrode difference connecting interface V2 and V4, and the grid of metal-oxide-semiconductor Q1 and Q3, by the way that resistance is driven to be indirectly connected with interface V2, the grid of metal-oxide-semiconductor Q2 and Q4 are by driving resistance to be indirectly connected with interface V1.The circuit power supply just connecing or reversal connection under the conditions of can be achieved normal work and small power consumption.
Description
Technical field
The utility model is related to printed wiring board protection technique fields, and in particular, to a kind of to utilize metal-oxide-semiconductor (metal-oxygen
Compound-semiconductor field effect transistor) it realizes and positive and negative can connect the low consumption circuit of power supply.
Background technology
Multiple independent power modules are typically designed in electronic system, occur reverse power connection phenomenon in order to prevent, often
Method is that polarity is distinguished with apparent mark in the input terminal of power module, since manual operation is inevitably deposited
In error, therefore reverse power connection problem can not also prevent completely, once and power supply will necessarily then damage the input of power supply by reversal connection
Port, the situation that power module is even caused integrally to burn.In order to reduce loss, need design one kind that can fit simultaneously in the industry
The protection circuit with reversal connection is just being connect for power supply.
It is existing can reverse-connection protection circuit include it is following two：
1st, the one-way conduction of diode is utilized
Referring to Fig. 1, as power end V12When connecting anode and interface 2 for positive voltage, that is, interface 1 and connecting cathode, diode D1 and
D2 forward conductions and diode D3 and D4 are reversely not turned on, electric current from interface 1 begin flow through diode D1, interface 3, load RL,
Interface 4 and diode D2 eventually arrive at interface 2 and are formed into a loop, at this time load end V34For positive voltage；And as power end V12For negative electricity
When pressure is that interface 1 connects cathode and interface 2 and connects anode, diode D3 and D4 forward conduction and diode D1 and D2 are not led reversely
Logical, electric current begins flow through diode D4, interface 3, load RL, interface 4 and diode D3 from interface 2 and eventually arrives at interface 1 and formed
Circuit, at this time load end V34Still it is positive voltage；It can be seen that no matter how power end connects, the load end V of entire circuit34Begin
Positive voltage is kept eventually.
2nd, circuit is switched over using relay
Referring to Fig. 2, as power end V12When connecting anode and the connection cathode of interface 2 for positive voltage, that is, interface 1, due to diode
D2 is reversely not turned on, and relay is not attracted i.e. change-over switch and is connected with K2 and K5, and electric current begins flow through K1, K2, interface from interface 1
3rd, load, interface 4, K5 and K4 eventually arrive at interface 2 and are formed into a loop, at this time load end V34For positive voltage；And as power end V12For
When negative voltage, that is, interface 1 connects cathode and interface 2 and connects anode, diode D1 forward conductions, it is change-over switch that relay, which is attracted,
It is connected with K3 and K6, electric current begins flow through K4, K6, interface 3, load, interface 4, K3 and K1 from interface 2 and eventually arrives at 1 shape of interface
Into circuit, load end V at this time34Still it is positive voltage；It can be seen that no matter how power end connects, the load end V of entire circuit34
Remain positive voltage.
Although the above method all realizes the protective effect to circuit and ensures the normal work of load, also exist with
Lower problem：The diode used in scheme 1 is big (being at least depressured 0.5V) there are problem of pressure drop and Amplitude of Hypotensive, so not being suitable for
Voltage change is required in stringenter equipment, in addition when by electric current it is larger when, diode can seriously generate heat, and equipment is held
Easily break down because of diode burnout problems；It is big compared with the relay occupied space used in scheme 2, it is small-sized to be unfavorable for equipment
Metaplasia is produced, and the switching action of relay will inherently consume electric energy, not be suitable for the equipment stringenter to power consumption requirements.
Utility model content
The purpose of this utility model is to provide it is a kind of it is simple in structure, low in energy consumption, pressure drop is small, occupies little space and can be same
When protection circuit with reversal connection is just being connect suitable for power supply, to solve the problems, such as to propose in background technology.
To achieve the above object, the utility model provides a kind of low-power consumption that power supply positive and negative can be connect using metal-oxide-semiconductor realization
Circuit, including current input terminal interface V1 and V2, current output terminal interface V3 and V4, four metal-oxide-semiconductors Q1, Q2, Q3 and Q4 and
Resistance is driven, and the metal-oxide-semiconductor Q1 and Q4 is N-type metal-oxide-semiconductor, the metal-oxide-semiconductor Q2 and Q3 is p-type metal-oxide-semiconductor；
For the metal-oxide-semiconductor Q1, connecting interface V1 is drained and source electrode connecting interface V4, and its grid is by driving resistance
It is indirectly connected with interface V2；For the metal-oxide-semiconductor Q2, connecting interface V2 is drained and source electrode connecting interface V3, and its grid leads to
Resistance of overdriving is indirectly connected with interface V1；For the metal-oxide-semiconductor Q3, connecting interface V1 is drained and source electrode connecting interface V3,
And its grid is by driving resistance to be indirectly connected with interface V2；For the metal-oxide-semiconductor Q4, connecting interface V2 is drained and source electrode connects
Connection interface V4, and its grid is by driving resistance to be indirectly connected with interface V1.
MOS (Metal-Oxide-Semiconductor) is managed, i.e. metal-oxide semiconductor fieldeffect transistor,
Including three grid G, source S and drain D pins, when metal-oxide-semiconductor is connected into circuit, the voltage change between grid G and source S is
VGSThe variation of conducting resistance between source S and drain D can be caused, and then influences the break-make of metal-oxide-semiconductor place circuit.Common metal-oxide-semiconductor point
For N-type and p-type：For N-type metal-oxide-semiconductor, work as VGSCircuit communication during for just and more than certain value, and works as VGSTo bear and being less than
Circuit disconnects during certain value；For p-type metal-oxide-semiconductor, work as VGSFor negative and circuit communication during less than certain value, and work as VGSFor just
And circuit disconnects during more than certain value.
Preferably, the quantity of the driving resistance is four and respectively R1, R2, R3 and R4, four drivings resistance
The grid with four metal-oxide-semiconductors is correspondingly connected with respectively.
Preferably, the quantity of the driving resistance is two and respectively R1 and R2, the driving resistance R1 and metal-oxide-semiconductor Q1
Grid connection, the driving resistance R2 is connected with the grid of metal-oxide-semiconductor Q2, and the grid of the metal-oxide-semiconductor Q3 is by driving resistance R1
It is indirectly connected with interface V2, the metal-oxide-semiconductor Q4 is by driving resistance R2 to be indirectly connected with interface V1.
Preferably, the Standard resistance range of the driving resistance is 5-50k Ω, and effect is to reduce the electric current of grid and ensure each
Metal-oxide-semiconductor it is safe to use.The driving resistance is controlled before and after pulse by changing along steepness and preventing from shaking, and reduces collector
Due to voltage spikes, the switching speed of each metal-oxide-semiconductor is controlled, so as to prevent metal-oxide-semiconductor from damaging.
Preferably, the circuit further includes both ends difference the connecting interface V3 and V4 of load RL, the load RL.
Technical solution provided by the utility model at least has the advantages that：
1st, using the on state characteristic of metal-oxide-semiconductor come the folding of control circuit, no matter power end is in just connects or anti-the circuit
In the case of connecing, so that the voltage of load end remains and stablizes constant, the normal work and circuit of load are ensured that
It is safe to use；
2nd, since the conducting resistance of metal-oxide-semiconductor can be made very small (existing process can accomplish milliohm grade), so metal-oxide-semiconductor
High current can be carried and consume considerably less electric energy, while its pressure drop can be ignored, the circuit is very suitable for big electricity
Stream, low pressure drop, low power consuming requirement equipment；
3rd, the circuit structure is simple and easy to use, occupies little space, and is conducive to device miniaturization production.
Description of the drawings
It is required in being described below to embodiment in order to illustrate more clearly of the technical scheme in the embodiment of the utility model
Attached drawing to be used is briefly described, it should be apparent that, drawings discussed below is only some implementations of the utility model
Example, for those of ordinary skill in the art, without creative efforts, can also obtain according to these attached drawings
Other attached drawings are obtained, wherein：
Fig. 1 be it is existing using diode realize power supply can positive-negative connected circuit protection scheme；
Fig. 2 be it is existing using relay realize power supply can positive-negative connected circuit protection scheme；
Fig. 3 is a kind of structure diagram of embodiment of circuit described in the utility model；
Fig. 4 is the structure diagram of another embodiment of circuit described in the utility model；
In figure：Current input terminal interface：V1, V2, current output terminal interface：V3, V4, metal-oxide-semiconductor：Q1、Q2、Q3、Q4；Driving
Resistance：R1、R2、R3、R4；Load RL.
Specific embodiment
The following is a combination of the drawings in the embodiments of the present utility model, and the technical scheme in the embodiment of the utility model is carried out
It clearly and completely describes, it is clear that described embodiment is only the part of the embodiment rather than whole of the utility model
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are without making creative work
The all other embodiment obtained, shall fall within the protection scope of the present invention.
Embodiment one
Referring to Fig. 3, a kind of low consumption circuit that power supply positive and negative can be connect using metal-oxide-semiconductor realization, including current input terminal interface
V1 and V2, current output terminal interface V3 and V4, four metal-oxide-semiconductors Q1, Q2, Q3 and Q4, four driving resistance R1, R2, R3 and R4, with
And load RL, and the metal-oxide-semiconductor Q1 and Q4 is N-type metal-oxide-semiconductor, the metal-oxide-semiconductor Q2 and Q3 is p-type metal-oxide-semiconductor.
For the metal-oxide-semiconductor Q1, connecting interface V1 is drained and source electrode connecting interface V4, and its grid is by driving resistance
R1 is indirectly connected with interface V2；For the metal-oxide-semiconductor Q2, connecting interface V2 is drained and source electrode connecting interface V3, and its grid
By the way that resistance R2 is driven to be indirectly connected with interface V1；For the metal-oxide-semiconductor Q3, connecting interface V1 is drained and source electrode connecting interface
V3, and its grid is by driving resistance R3 to be indirectly connected with interface V2；For the metal-oxide-semiconductor Q4, drain connecting interface V2 and
Source electrode connecting interface V4, and its grid, by the way that resistance R4 is driven to be indirectly connected with interface V1, the both ends of the load RL connect respectively
Connection interface V3 and V4.
In the present embodiment, the model IRF9317PbF of described metal-oxide-semiconductor Q2, Q3, conducting resistance is 6.6m Ω, described
The model IRF7413 of metal-oxide-semiconductor Q1, Q4, conducting resistance are 11m Ω, and the resistance value of described driving resistance R1, R2, R3, R4 are
10Ω.When supply voltage is 12V, electric current is 10A, circuit pressure drop itself is only 0.176V, and power consumption only encloses 1.76W.
Under equal conditions, minimum more than the 1V of pressure drop, more than power consumption 10W if diode design is selected；If select relay
Device scheme, it is contemplated that the contact resistance of relay is then depressured at least generally more than 20m Ω more than 0.4V, and relay
Itself electric current is consumed, overall power must be in more than 4W.In conclusion the effect of the utility model is best.
Embodiment two
Referring to Fig. 4, a kind of low consumption circuit that power supply positive and negative can be connect using metal-oxide-semiconductor realization, in the structure of embodiment one
On the basis of eliminate driving resistance R3 and R4, and the grid of metal-oxide-semiconductor Q3 is by driving resistance R1 to be indirectly connected with interface V2, MOS
For pipe Q4 by the way that resistance R2 is driven to be indirectly connected with interface V1, its in the present embodiment is identical with embodiment one with structure.
The operation principle of foregoing circuit is as follows：
As power end V12For be just interface V1 connection positive poles and during interface V2 connection power cathodes, N-type metal-oxide-semiconductor Q1's
VGSIt is negative, the V of p-type metal-oxide-semiconductor Q2GSFor just, therefore metal-oxide-semiconductor Q1 and Q2 are closed, interface V1 is not connected with V4, interface V2 and V3 not
Connection, while the V of p-type metal-oxide-semiconductor Q3GSIt is negative, the V of N-type metal-oxide-semiconductor Q4GSFor just, therefore metal-oxide-semiconductor Q3 and Q4 are opened, interface V1 and
V3 connections, interface V2 are connected with V4；At this time electric current from interface V1 begin flow through metal-oxide-semiconductor Q3, interface V3, load RL, interface V4 and
Metal-oxide-semiconductor Q4 is finally reached interface V2 forming circuits, load end V34For positive voltage.
As power end V12For negative i.e. interface V1 connection power cathodes during interface V2 connection positive poles, p-type metal-oxide-semiconductor Q3's
VGSFor just, the V of N-type metal-oxide-semiconductor Q4GSBe it is negative, therefore metal-oxide-semiconductor Q3 and Q4 close, interface V1 is not connected with V3, interface V2 and V4 not
Connection, while the V of N-type metal-oxide-semiconductor Q1GSFor just, the V of p-type metal-oxide-semiconductor Q2GSBe it is negative, therefore metal-oxide-semiconductor Q1 and Q2 open, interface V1 and
V4 connections, interface V2 are connected with V3；At this time electric current from interface V2 begin flow through metal-oxide-semiconductor Q2, interface V3, load RL, interface V4 and
Metal-oxide-semiconductor Q1 is finally reached interface V1 forming circuits, load end V34Still it is positive voltage.
In conclusion no matter how power end connects, the load end V of entire circuit34Remain positive voltage.
The above is only the preferred embodiment of the present invention, not thereby limits the patent protection model of the utility model
It encloses, for those skilled in the art, the present invention may have various modifications and changes.In the spirit of the utility model
Within principle, every any improvement made based on the specification and figures of the utility model or equivalent substitution, directly or
Other relevant technical fields are used in indirectly, should all be included in the scope of patent protection of the utility model.
Claims (5)
1. a kind of low consumption circuit that power supply positive and negative can be connect using metal-oxide-semiconductor realization, which is characterized in that connect including current input terminal
Mouth V1 and V2, current output terminal interface V3 and V4, four metal-oxide-semiconductors Q1, Q2, Q3 and Q4 and driving resistance, and the metal-oxide-semiconductor
Q1 and Q4 is N-type metal-oxide-semiconductor, and the metal-oxide-semiconductor Q2 and Q3 is p-type metal-oxide-semiconductor；
For the metal-oxide-semiconductor Q1, connecting interface V1 is drained and source electrode connecting interface V4, and its grid is by driving resistance with connecing
Mouth V2 is indirectly connected with；For the metal-oxide-semiconductor Q2, connecting interface V2 is drained and source electrode connecting interface V3, and its grid passes through drive
Dynamic resistance is indirectly connected with interface V1；For the metal-oxide-semiconductor Q3, connecting interface V1 is drained and source electrode connecting interface V3, and its
Grid is by driving resistance to be indirectly connected with interface V2；For the metal-oxide-semiconductor Q4, connecting interface V2 is drained and source electrode connects
Mouth V4, and its grid is by driving resistance to be indirectly connected with interface V1.
2. low consumption circuit according to claim 1, which is characterized in that the quantity of the driving resistance is four and difference
For R1, R2, R3 and R4, grid of the four drivings resistance respectively with four metal-oxide-semiconductors is correspondingly connected with.
3. low consumption circuit according to claim 1, which is characterized in that the quantity of the driving resistance is two and difference
For R1 and R2, the driving resistance R1 is connected with the grid of metal-oxide-semiconductor Q1, and the driving resistance R2 is connected with the grid of metal-oxide-semiconductor Q2,
The grid of the metal-oxide-semiconductor Q3 is by driving resistance R1 to be indirectly connected with interface V2, and the metal-oxide-semiconductor Q4 is by driving resistance R2 with connecing
Mouth V1 is indirectly connected with.
4. low consumption circuit according to claim 1, which is characterized in that the Standard resistance range of the driving resistance is 5-50k
Ω ensures the safe to use of each metal-oxide-semiconductor by reducing the electric current of grid.
5. according to the low consumption circuit described in any one in claim 1-4, which is characterized in that the circuit further includes load
Both ends difference the connecting interface V3 and V4 of RL, the load RL.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721507157.9U CN207460131U (en) | 2017-11-13 | 2017-11-13 | A kind of low consumption circuit that power supply positive and negative can be connect using metal-oxide-semiconductor realization |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201721507157.9U CN207460131U (en) | 2017-11-13 | 2017-11-13 | A kind of low consumption circuit that power supply positive and negative can be connect using metal-oxide-semiconductor realization |
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| CN207460131U true CN207460131U (en) | 2018-06-05 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109149971A (en) * | 2018-09-26 | 2019-01-04 | 深圳市三旺通信技术有限公司 | Low-loss is nonpolarity high-power MOS tube rectifying circuit |
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2017
- 2017-11-13 CN CN201721507157.9U patent/CN207460131U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109149971A (en) * | 2018-09-26 | 2019-01-04 | 深圳市三旺通信技术有限公司 | Low-loss is nonpolarity high-power MOS tube rectifying circuit |
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