CN207458948U - For improving the LDMOS device and related circuit of high-voltage starting circuit Electro-static Driven Comb ability - Google Patents
For improving the LDMOS device and related circuit of high-voltage starting circuit Electro-static Driven Comb ability Download PDFInfo
- Publication number
- CN207458948U CN207458948U CN201721461224.8U CN201721461224U CN207458948U CN 207458948 U CN207458948 U CN 207458948U CN 201721461224 U CN201721461224 U CN 201721461224U CN 207458948 U CN207458948 U CN 207458948U
- Authority
- CN
- China
- Prior art keywords
- ldmos device
- bore region
- region
- area
- pressure control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
- 230000003766 combability Effects 0.000 title claims abstract description 22
- 230000015556 catabolic process Effects 0.000 claims abstract description 34
- 230000005669 field effect Effects 0.000 claims abstract description 18
- 239000004020 conductor Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000024241 parasitism Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 210000000554 iris Anatomy 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 210000003739 neck Anatomy 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The utility model is related to a kind of for improving the LDMOS device and related circuit of high-voltage starting circuit Electro-static Driven Comb ability, LDMOS device is connected with outer low pressure control circuit, and with external junction field effect transistor common drain, wherein, the close region of LDMOS device including drain electrode end, active area, length and actual area matches the first bore region and length and actual area matches the second bore region, drain electrode end and N traps in outer low pressure control circuit is the easy breakdown area of failure during Electro-static Driven Comb；Drain electrode end includes metallic conductor, the metallic conductor is connected by the first bore region and the second bore region with active area, wherein, easy breakdown area is failed for non-porous structure, and the region is between the first bore region and the second bore region and obstructs first bore region and the second bore region.Using the LDMOS device of this kind of structure, device anti-static electrictity release energy ability can be improved in the case where not changing chip area.
Description
Technical field
The utility model is related to the technology necks that electronic circuit field more particularly to the Electro-static Driven Comb ability of integrated circuit improve
Domain, in particular to a kind of LDMOS device and related circuit for being used to improve high-voltage starting circuit Electro-static Driven Comb ability.
Background technology
The advantages that LED light is with its efficient low-consume, energy conservation and environmental protection, and response is fast, long lifespan and as the lighting source of a new generation,
The LED light of production low cost and high reliability has very important significance.At present, in LED drive circuit, a kind of pole simplifies
Low cost LED drive chip, which carries high-voltage starting circuit, be internally integrated junction field effect transistor adjustment pipe and
High-voltage LDMOS pipe, peripheral circuit eliminate startup resistance, and circuit inside and system peripherals are all extremely simplified, had extraordinary
Market prospects, the chip LED light control system application as shown in Figure 1, driving chip include junction field effect transistor, height
Pressure LDMOS and low-voltage control circuit three parts, junction field effect transistor are connected with high-voltage LDMOS drain terminal, two devices it is resistance to
Pressure value requires that comparison is high, and the high tension apparatus being synthesized together on domain with JEFT and high-voltage LDMOS, two such device shares
Drain region area can save chip area, still, since high tension apparatus and low-voltage device integrate, cause chip electrostatic
Releasability is inadequate, the Electro-static Driven Comb energy force difference of the chip, during test drain electrode one direct impulse Electro-static Driven Comb is inputted to VDD and is lost
Effect, the drain electrode end breakdown of high-voltage LDMOS, as shown in Fig. 2, the drain electrode end that breakdown occurs mainly in high tension apparatus has close to low-pressure area
Include drain terminal 1 in the place of N traps, wherein Fig. 2, other 2, easy breakdown point 3, higher-pressure region 4, low-pressure area 5, N traps 6, PMOS device
7, wherein N traps connection VDD, as shown in figure 3, the N trap Nwell structures in the drain electrode end of LDMOS, substrate sub and low-voltage control circuit
Into NPN structures, when Electro-static Driven Comb is tested, when inputting a positive high-voltage pulse to VDD from drain electrode end, height can be passed through
The drain junction capacitance of pressure pipe injects high current to substrate, raises the base voltage of parasitic NPN pipe, and NPN conductings generate high current,
Electro-static Driven Comb leakage current is concentrated mainly on LDMOS drain terminals close to the place of low pressure N traps, causes to puncture at the drain electrode of LDMOS,
In, in Fig. 3 high-low voltage device include drain terminal 1, N traps 6, JFET8, the NPN9 of parasitism, P type substrate layer 10, deep p-well 11, p-well 12,
Substrate 13, the source 14 of JFET, the grid 15 of JFET, grid 16, deep N-well 17,18, source 19, low-voltage device 21, VDD
22, wherein, the P+ in figure represents the injection of p-type high concentration, and N+ represents that N-type high concentration is injected, the region higher with oblique line in figure
It represents field oxygen, represent grid oxygen with the relatively low region of oblique line.
In the prior art, a kind of way is to add shading ring among high-low pressure, but can waste chip area, and scheme is such as
Under：As shown in figure 4, increasing the TB structures (Nwell meets GND) of ground connection between low-voltage control circuit high tension apparatus, NPN is destroyed
Structure, after increasing TB structures, electric current meeting prioritizing selection flows to GND by TB structures when drain electrode end has high-voltage pulse, avoids electric current
Concentrate on drain electrode end in the place of low pressure, Fig. 4 with TB structures high-low voltage device include drain terminal 1, N traps 6, JFET8,
NPN9, P type substrate layer 10, deep p-well 11, p-well 12, substrate 13, the source 14 of JFET, grid 15, the grid of JFET of parasitism
16th, deep N-well 17,18, source 19, TB shading rings 20, low-voltage device 21, VDD22, P type buried regions 23, the P+ in figure represents p-type
High concentration is injected, and N+ represents that N-type high concentration is injected, and the region higher with oblique line in figure represents field oxygen, with the relatively low area of oblique line
Domain representation grid oxygen, but as shown in figure 5, Fig. 5 includes drain terminal 1, other 2, easy breakdown point 3, higher-pressure region 4, low-pressure area 5, N traps 6,
PMOS device 7, TB shading rings 20, wherein N traps connect VDD, between higher-pressure region 4 and TB shading rings 20 at intervals of 12 μm, increase
TB shading rings can increase chip area, it is necessary to the level made a plate again is more, cost of idleness, wherein, the N well region of Fig. 5 should be
The contour region with the easy breakdown area, but see N traps interior zone in figure clearly in order to clearer, by N well region in figure
It is exaggerated.
Utility model content
The purpose of the utility model is to overcome the shortcomings that the above-mentioned prior art, provide it is a kind of do not increase additional devices and
Chip area, it is cost-effective, effectively improve Electro-static Driven Comb ability, manufacture craft is easy for improving high-voltage starting circuit
The LDMOS device and related circuit of Electro-static Driven Comb ability.
To achieve these goals, the LDMOS for being used to improve high-voltage starting circuit Electro-static Driven Comb ability of the utility model
Device and related circuit have following form：
In the LDMOS device for being used to improve high-voltage starting circuit Electro-static Driven Comb ability and related circuit for improving height
The LDMOS device of start-up circuit Electro-static Driven Comb ability is pressed, the LDMOS device is connected with outer low pressure control circuit, and
With external junction field effect transistor common drain, be mainly characterized by, the LDMOS device include drain electrode end, active area,
Match the first bore region and length and actual area of length and actual area matches the second bore region, the drain electrode end
Close region with N traps in the outer low pressure control circuit is the easy breakdown area of failure during Electro-static Driven Comb；Institute
The drain electrode end stated includes metallic conductor, the metallic conductor by first bore region and the second bore region with it is described
Active area is connected, wherein, the easy breakdown area of the failure is non-porous structure, and the easy breakdown area of the failure is located at described the
Between one bore region and the second bore region and first bore region and the second bore region are obstructed, the non-porous structure adds institute
The drain region resistance for the easy breakdown area of failure stated is forced in the LDMOS device except remaining region for easy breakdown area of failing
Also assist in Electro-static Driven Comb current drain.
Preferably, there are N traps in the outer low pressure control circuit described in the length and transverse direction of the easy breakdown area of failure
The height in region is equal.
High voltage startup electricity in the LDMOS device for being used to improve high-voltage starting circuit Electro-static Driven Comb ability and related circuit
Road is mainly characterized by, and the high-voltage starting circuit includes LDMOS device, junction field effect transistor and low voltage control
Module, the LDMOS device and the junction field effect transistor common drain, the grid of the junction field effect transistor
Pole and source electrode ground connection, the source electrode of the junction field effect transistor are also connected with the low-pressure control module；It is described
LDMOS device source electrode and grid be connected respectively with the low-pressure control module；External electrical source respectively with it is described
Low-pressure control module and the source electrode of the LDMOS device be connected.
The LDMOS device for being used to improve high-voltage starting circuit Electro-static Driven Comb ability and corresponding electricity using the utility model
By changing one layer of hole version in prior art basis, a metallic conductor of drain electrode end near easy breakdown area of failing is arrived for road
The hole of active area removes one section, increases the drain region resistance that neighbouring N traps are arrived at this, other places is forced to also assist in Electro-static Driven Comb electric current
It releases, cost is relatively low, effectively realizes that Electro-static Driven Comb ability improves, change is convenient, and need not increase chip area, applied widely
It is general.
Description of the drawings
Fig. 1 is LED light activation system circuit structure diagram of the prior art.
Fig. 2 is the domain schematic diagram of the easy breakdown area of failure of LDMOS device in the prior art.
Fig. 3 is high-low voltage device sectional view of the prior art.
Fig. 4 is the high-low voltage device sectional view of the prior art with TB structures.
Fig. 5 is the domain schematic diagram of the high-low voltage device of the prior art with TB structures.
Fig. 6 is a specific embodiment of the utility model for improving high-voltage starting circuit Electro-static Driven Comb ability
The structure improvement of LDMOS device and the domain schematic diagram of peripheral circuits proportionate relationship.
Fig. 7 is a specific embodiment of the utility model for improving high-voltage starting circuit Electro-static Driven Comb ability
The improved domain schematic diagram of structure of LDMOS device.
1 drain terminal
2 is other
3 easy breakdown points
4 higher-pressure regions
5 low-pressure areas
6 N traps
7 PMOS devices
8 JFET
9 parasitic NPN
10 P type substrate layers
11 deep p-wells
12 p-wells
13 substrates
The source of 14 JFET
The grid of 15 JFET
16 grids
17 deep N-wells
18 ground
19 sources
20 TB shading rings
21 low-voltage devices
22 VDD
23 p type buried layers
Specific embodiment
In order to more clearly describe the technology contents of the utility model, come with reference to specific embodiment into traveling one
The description of step.
Embodiment described in following exemplary embodiment does not represent all embodiment party consistent with the application
Formula.On the contrary, they are only the device consistent with some aspects being described in detail in such as the appended claims, the application and side
The example of method.
It is only merely for the purpose of description specific embodiment in term used in this application, and is not intended to be limiting the application.
It is also intended in the application and " one kind " of singulative used in the attached claims, " described " and "the" including majority
Form, unless context clearly shows that other meanings.Below with reference to the accompanying drawings each embodiment of the utility model is described in detail.
In the LDMOS device and the relevant apparatus that are used to improve high-voltage starting circuit Electro-static Driven Comb ability of the utility model,
The LDMOS device for being used to improve high-voltage starting circuit Electro-static Driven Comb ability, the LDMOS device and outer low pressure control
Circuit processed is connected, and with external junction field effect transistor common drain, wherein, the LDMOS device include drain electrode end,
Active area, length and actual area match the first bore region and length and actual area matches the second bore region, it is described
The first bore region and the second bore region be to have pore structure, N in the drain electrode end and the outer low pressure control circuit
The close region of trap is the easy breakdown area of failure during Electro-static Driven Comb；The drain electrode end includes metallic conductor, should
Metallic conductor is connected by first bore region and the second bore region with the active area, wherein, the mistake
Easy breakdown area is imitated as non-porous structure, which easily punctures region between first bore region and the second bore region
And first bore region and the second bore region are obstructed, the non-porous structure adds the drain region of the easy breakdown area of failure
Resistance is forced in the LDMOS device except remaining region for easy breakdown area of failing also assists in Electro-static Driven Comb current drain.
In above-mentioned specific embodiment, the outer low pressure control described in the length and transverse direction of the easy breakdown area of failure
The height for having N well region in circuit is equal.
Based on above-described embodiment, the LDMOS devices for being used to improve high-voltage starting circuit Electro-static Driven Comb ability of the utility model
In part and relevant apparatus, the high-voltage starting circuit based on LDMOS device, wherein, the high-voltage starting circuit includes
LDMOS device, junction field effect transistor and low-pressure control module, the LDMOS device and the junction field
Transistor common drain, grid and the source electrode ground connection of the junction field effect transistor, the junction field effect transistor
Source electrode be also connected with the low-pressure control module；The source electrode and grid of the LDMOS device respectively with it is described
Low-pressure control module is connected；The external electrical source source with the low-pressure control module and the LDMOS device respectively
Pole is connected.
Below in conjunction with the picture of specific embodiment, some structures and principle of the utility model are introduced.
As shown in Fig. 2, ESD (Electro-static Driven Comb) fails, easy breakdown point is in the close low-pressure area N in Drain (drain electrode) ends of high-voltage tube
The spacing of the place of trap, the N well regions and high tension apparatus meets design rule, and it is existing that breakdown is only present with when ESD is tested
As.The utility model employs a kind of rule of thumb, as shown in Figures 6 and 7, by Drain ends near breakdown point
The hole of an aluminium (i.e. metallic conductor) to active area remove one section, increase at this to neighbouring N traps, other places forced to also assist in
ESD current drains can be effectively improved ESD abilities by changing one layer of hole version, and ESD abilities, which can be realized, with relatively low cost changes
Kind, change is convenient, need to only remove part active area hole, saves cost, need to only change one layer of hole version and can be realized.
In Fig. 6, pointed by the arrow and part of amplification is by the easy breakdown area of failure (arrow marks region), the area
The upper part in domain is the first bore region, and lower end is the second bore region.In Fig. 6 the LDMOS device of the leftmost side include drain terminal 1,
Other 2, N traps 6, in Fig. 6 among then left side LDMOS device irises out the enlarged drawing in region, i.e. failure easily in expression figure for part
Breakdown area, and the part on right side then represents that the signal in the region behind active area hole is removed in the easy breakdown area of the failure in figure
Figure, in the figure 7, the center section of Fig. 7 represent the enlarged drawing of the easy breakdown area of failure of left side LDMOS device in figure, right in figure
The part of side then represents that the schematic diagram in the region behind active area hole is removed in the easy breakdown area of the failure.
The length for removing hole can be set to：Laterally there is the place of N traps, hole is all removed, you can with according to N traps
Size determines to remove the length in hole.
Compared with prior art, the present embodiment only needs to remove in one section of active area hole that drain terminal nearby has N traps, no
Increase chip area；If pinpointing the problems after plate-making, as long as correcting changes one layer of version, unlike in the prior art, if to increase
It is that place is more that TB shading rings, which then need change,.
The LDMOS device for being used to improve high-voltage starting circuit Electro-static Driven Comb ability and corresponding electricity using the utility model
By changing one layer of hole version in prior art basis, a metallic conductor of drain electrode end near easy breakdown area of failing is arrived for road
The hole of active area removes one section, increases the drain region resistance that neighbouring N traps are arrived at this, other places is forced to also assist in Electro-static Driven Comb electric current
It releases, cost is relatively low, effectively realizes that Electro-static Driven Comb ability improves, change is convenient, and need not increase chip area, applied widely
It is general.
It will be appreciated by those skilled in the art that attached drawing is the schematic diagram of a preferred embodiment, module or stream in attached drawing
Journey is not necessarily implemented necessary to the utility model.The foregoing is merely specific embodiment of the present utility model, but this
The protection domain of utility model is not limited thereto, and any one skilled in the art discloses in the utility model
In technical scope, change or replacement can be readily occurred in, should be covered within the scope of the utility model.Therefore, this reality
It should be based on the protection scope of the described claims with new protection domain.
Claims (3)
1. a kind of for improving the LDMOS device of high-voltage starting circuit Electro-static Driven Comb ability, the LDMOS device is low with outside
Pressure control circuit is connected, and with external junction field effect transistor common drain, which is characterized in that the LDMOS device
Match the first bore region and length including drain electrode end, active area, length and actual area and actual area matches second
The close region of N traps is during Electro-static Driven Comb in bore region, the drain electrode end and the outer low pressure control circuit
The easy breakdown area of failure；The drain electrode end includes metallic conductor, the metallic conductor by first bore region with
And second bore region be connected with the active area, wherein, the easy breakdown area of the failure is non-porous structure, and the failure is easy
Breakdown area is between first bore region and the second bore region and obstructs first bore region and the second bore region.
2. according to claim 1 for improving the LDMOS device of high-voltage starting circuit Electro-static Driven Comb ability, feature exists
In the length of the easy breakdown area of failure is with there is the height phase of N well region in the outer low pressure control circuit described in transverse direction
Deng.
A kind of 3. high-voltage starting circuit of the LDMOS device based in claim 1, which is characterized in that the high voltage startup
Circuit includes LDMOS device, junction field effect transistor and low-pressure control module, the LDMOS device and the knot
Type field-effect transistor common drain, grid and the source electrode ground connection of the junction field effect transistor, junction type field effect
The source electrode of transistor is answered also to be connected with the low-pressure control module；Source electrode and the grid difference of the LDMOS device
It is connected with the low-pressure control module；External electrical source respectively with the low-pressure control module and the LDMOS
The source electrode of device is connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721461224.8U CN207458948U (en) | 2017-11-06 | 2017-11-06 | For improving the LDMOS device and related circuit of high-voltage starting circuit Electro-static Driven Comb ability |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721461224.8U CN207458948U (en) | 2017-11-06 | 2017-11-06 | For improving the LDMOS device and related circuit of high-voltage starting circuit Electro-static Driven Comb ability |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207458948U true CN207458948U (en) | 2018-06-05 |
Family
ID=62253940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721461224.8U Withdrawn - After Issue CN207458948U (en) | 2017-11-06 | 2017-11-06 | For improving the LDMOS device and related circuit of high-voltage starting circuit Electro-static Driven Comb ability |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207458948U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108925009A (en) * | 2018-08-15 | 2018-11-30 | 深圳市锐拓显示技术有限公司 | Electrostatic discharge protection circuit and antistatic mould group |
| CN109755313A (en) * | 2017-11-06 | 2019-05-14 | 无锡华润矽科微电子有限公司 | For improving the LDMOS device and related circuit of high-voltage starting circuit Electro-static Driven Comb ability |
| WO2020052244A1 (en) * | 2018-09-14 | 2020-03-19 | 贵州大学 | Led linear constant current driving circuit within adaptive wide voltage range |
| CN113595416A (en) * | 2021-07-28 | 2021-11-02 | 深圳市长运通半导体技术有限公司 | High-voltage-resistant voltage-stabilizing integrated circuit |
-
2017
- 2017-11-06 CN CN201721461224.8U patent/CN207458948U/en not_active Withdrawn - After Issue
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109755313A (en) * | 2017-11-06 | 2019-05-14 | 无锡华润矽科微电子有限公司 | For improving the LDMOS device and related circuit of high-voltage starting circuit Electro-static Driven Comb ability |
| CN109755313B (en) * | 2017-11-06 | 2024-02-20 | 华润微集成电路(无锡)有限公司 | LDMOS device and circuit for improving electrostatic discharge capacity of high-voltage starting circuit |
| CN108925009A (en) * | 2018-08-15 | 2018-11-30 | 深圳市锐拓显示技术有限公司 | Electrostatic discharge protection circuit and antistatic mould group |
| WO2020052244A1 (en) * | 2018-09-14 | 2020-03-19 | 贵州大学 | Led linear constant current driving circuit within adaptive wide voltage range |
| CN113595416A (en) * | 2021-07-28 | 2021-11-02 | 深圳市长运通半导体技术有限公司 | High-voltage-resistant voltage-stabilizing integrated circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN207458948U (en) | For improving the LDMOS device and related circuit of high-voltage starting circuit Electro-static Driven Comb ability | |
| CN102903715B (en) | Semiconductor integrated circuit | |
| JP5172654B2 (en) | Semiconductor device | |
| CN104218077B (en) | ESD transistor | |
| CN105122452B (en) | Semiconductor device | |
| CN105934818A (en) | Integrated high side gate driver structure and circuit for driving high side power transistors | |
| CN104662762B (en) | Semiconductor device | |
| JPS62298152A (en) | Semiconductor device | |
| JP2006100532A (en) | Electrostatic protective circuit | |
| WO2012124677A1 (en) | High-voltage integrated circuit device | |
| CN102254912B (en) | Controlled silicon device under auxiliary trigger of embedded P-type MOS (Metal Oxide Semiconductor) transistor | |
| CN101106127A (en) | Electrostatic breakdown protection circuit | |
| CN103579224B (en) | ESD protects | |
| CN103384143A (en) | Amplification circuit comprising input signal limiting network | |
| CN108122904A (en) | A kind of esd protection structure | |
| JP2005203736A (en) | Electrostatic discharge protection circuit | |
| CN104867922B (en) | Conductor integrated circuit device and the electronic equipment for using the device | |
| CN109755313A (en) | For improving the LDMOS device and related circuit of high-voltage starting circuit Electro-static Driven Comb ability | |
| CN108321144A (en) | Static discharge clamps and static discharge clamp circuit | |
| CN109449156B (en) | Port electrostatic discharge protection circuit | |
| CN104137251B (en) | Semiconductor device | |
| US8698247B2 (en) | Semiconductor device | |
| CN104578025B (en) | Overvoltage crowbar for high voltage integrated circuit | |
| JP2003068872A (en) | Semiconductor device having high dielectric strength | |
| CN209045551U (en) | A kind of port static release protection circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 214135 -6, Linghu Avenue, Wuxi Taihu international science and Technology Park, Wuxi, Jiangsu, China, 180 Patentee after: China Resources micro integrated circuit (Wuxi) Co.,Ltd. Address before: No.180-22, Linghu Avenue, Taihu International Science and Technology Park, Wuxi, Jiangsu 214135 Patentee before: WUXI CHINA RESOURCES SEMICO Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20180605 Effective date of abandoning: 20240220 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20180605 Effective date of abandoning: 20240220 |
|
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |