CN207430271U - A kind of granular polycrystalline silicon fluid bed process units of sound wave auxiliary - Google Patents
A kind of granular polycrystalline silicon fluid bed process units of sound wave auxiliary Download PDFInfo
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- CN207430271U CN207430271U CN201721439055.8U CN201721439055U CN207430271U CN 207430271 U CN207430271 U CN 207430271U CN 201721439055 U CN201721439055 U CN 201721439055U CN 207430271 U CN207430271 U CN 207430271U
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Abstract
A kind of granular polycrystalline silicon fluid bed process units of sound wave auxiliary is made of sonic generator, fluid bed outer wall, cone-shaped ring face, inner sleeve, annulus even gas distribution device, annulus closing surface, cone-shaped ring even gas distribution device, discharge nozzle, concentric tubes and heater.The utility model strengthens gas, the mass transfer of solid phase in fluid bed using the sound wave of sonic generator production, so as to accelerate the speed that is vapor-deposited, is conducive to the loss of material accelerated speed of production, reduce homogeneous decomposition；The perforate on inner sleeve forms air cushion on interior sleeve lining, it is therefore prevented that silicon reduces maintenance time and loss of material in the deposition of wall surface.
Description
Technical field
The present invention relates to the granular polycrystalline silicon fluid bed lifes that granular polycrystalline silicon production field more particularly to a kind of sound wave aid in
Produce device.
Background technology
Polysilicon（polycrystalline silicon）, a kind of form of elemental silicon.Under high temperature fused state, have
Larger chemical activity, can be with substantially any material effects.It is particularly important defect semiconductor material with semiconductor property
Material.Polysilicon is the direct material for producing monocrystalline silicon again, be contemporary artificial intelligence, automatically control, information processing, opto-electronic conversion etc.
The electronics and information infrastructure material of semiconductor devices is referred to as " foundation stone of Microelectronics Building ".The production technology of polysilicon is mainly
Improved Siemens and fluidized bed process.Siemens Method produces column of polysilicon by way of vapor deposition, in order to improve raw material
Utilization rate and environmental-friendly, employs closed loop production technology i.e. improved Siemens on the basis of the former.Fluidized bed process is
During silane is passed through using polycrystalline silicon seed as the fluid bed of fluidized particles, cracks silane and deposited on crystal seed, so as to
To granulated polycrystalline silicon.Two kinds of technologies but almost start to walk simultaneously in history, and Siemens Method is shown one's talent by feat of purity advantage,
The market share of dominant position, at present fluidized bed process grain silicon is obtained in the 1960s（About 15% or so）Much smaller than west gate
Sub- method.Before in photovoltaic industry, this huge application market is not turned on, the production in polysilicon of cost is without so
Sensitivity, thus buried the advantage of fluidized bed process low energy consumption, development fluidized bed process production granulated polycrystalline silicon tool can be reduced effectively
Production cost.
Fluidized bed process production granulated polycrystalline silicon is the high-purity reaction gas utilized by rectification and purification or adsorption treatment
SiH4 or SiHCl3 with fluidizing gas H2, is passed through, high-purity silicon powder from fluidized-bed reactor bottom or side gas feed（Crystal seed）
Enter from reactor head in reactor.Reaction gas can blow the silica flour that grain size is 0.01~1 mm under suitable gas velocity
It sweeps and shows fluidized state.At the same time, under the action of reactor external heater, inside reactor maintains constant temperature
Chemical vapor deposition phenomenon occurs for degree, high-purity silicon powder surface, and high-purity silicon powder is grown into the approximation of a diameter of 0.2 ~ 3.0 mm
Spheric granules.There are three technologies are unfavorable for fluidized bed process production granulated polycrystalline silicon：What the 1st, the homogeneous decomposition of silane was formed is small
Amorphous silicon particle is easily blown away, and causes damages；2nd, the heteropical deposit of silane（Vapor deposition, abbreviation CVD）It can also happen that
On the wall of fluid bed, loss of material is caused；3rd, the friction of graininess silane and fluid bed wall surface introduces metal impurities, reduction
The purity of grain silicon.
Sound wave（Sound Wave or Acoustic Wave）It is the mode of propagation of sound, sound wave is a kind of mechanical wave, by
Object（Sound source）Vibration generates.Propagation of the sound wave in gas can cause the vibration of gas, for the solid particle in gas,
Since the effect bulky grain of inertia tends not to be maintained at original position with Gas Vibration, little particle inertia is small with gas
Body shakes.Mass transfer between gas and particle, bulky grain and short grained this non synchronous vibration reinforcing particle and gas.
The content of the invention
The present invention provides a kind of granular polycrystalline silicon fluid bed process units of sound wave auxiliary to solve the above-mentioned state of the art,
Acoustic wave device is introduced into granular polycrystalline silicon fluid bed process units, using the reinforcing particle of sound wave and the characteristic of gas transfer from
And the production for strengthening granular polycrystalline silicon reduces the adverse effect of homogeneous decomposition.The present invention solves skill used by above-mentioned technical problem
Art scheme is a kind of granular polycrystalline silicon fluid bed process units of sound wave auxiliary, it is characterised in that the process units is by sound wave
Generator 1, fluid bed outer wall 3, cone-shaped ring face 4, inner sleeve 5, annulus even gas distribution device 6, annulus closing surface 7, cone-shaped ring
Even gas distribution device 8, discharge nozzle 9, concentric tubes 10 and heater 12 are formed；The fluid bed outer wall 3 by upper circular cone end socket 31,
Cylindrical wall 32 and lower circular cone end socket 33 form；The side of the upper circular cone end socket 31 is provided with crystal seed inlet tube 2 and exhaust gas discharge
Mouth 14；The cylindrical wall 32 is connected by cone-shaped ring face 4 with the upper end of inner sleeve 5, by annulus even gas distribution device 6 and inner sleeve
It connects among cylinder 5, be connected by annulus closing surface 7 with the lower end of inner sleeve 5；The cone-shaped ring face 4, inner sleeve 5, cylinder
Wall 32 and annulus even gas distribution device 6 define first gas cushion chamber；The annulus closing surface 7, inner sleeve 5,32 and of cylindrical wall
Annulus even gas distribution device 6 defines second gas cushion chamber；Second hydrogen inlet 13 is arranged on cylindrical wall 32 and with
One gas buffer chamber connects；The heater 12 is arranged on the inside of second gas cushion chamber；The cone-shaped ring gas is equal
The outer edge of cloth device 8 is connected with the inside edge of annulus closing surface 7, and the discharge port 82 of even gas distribution device 8 connects with one end of discharge nozzle 9
It connects, the discharge nozzle 9 passes through lower circular cone end socket；The annulus closing surface 7, cone-shaped ring even gas distribution device 8, discharge nozzle 9 and under
Circular cone end socket 33 defines third gas cushion chamber；First hydrogen inlet 11 is arranged on lower circular cone end socket 33 and with the 3
Gas buffer chamber connects；The concentric tubes 10 are through discharge nozzle 9 and are deep into the inside of process units.
As an improvement, the center overlapping of axles of the central shaft of the concentric tubes 10 and discharge nozzle 9, and concentric tubes 10
Outer diameter is less than 10 ~ 50 mm of internal diameter of discharge nozzle 9.
As an improvement, be provided with the stomata 51 of a diameter of 1 ~ 3 mm on the inner sleeve 5, the percent opening of inner sleeve 5 for 5 ~
10%。
As an improvement, being provided with the stomata 61 of a diameter of 0.5 ~ 2 mm on the annulus even gas distribution device 6, annulus gas is equal
The percent opening of cloth device 6 is 10 ~ 15%.
It is further improved, the stomata 81 of a diameter of 2 ~ 5 mm, taper circle is provided on the cone-shaped ring even gas distribution device 8
The percent opening of ring even gas distribution device 8 is 10 ~ 18%.
It improves again, the angle value that the central shaft of the stomata 51 is crossed to form the angle of cut ɑ, ɑ with the central shaft of inner sleeve 5 is
10 ~ 45 degree.
Compared with prior art, the advantage of the invention is that：Sound wave using sonic generator production is strengthened in fluid bed
The mass transfer of gas, solid phase so as to accelerate the speed that is vapor-deposited, is conducive to the loss of material accelerated speed of production, reduce homogeneous decomposition；
The perforate on inner sleeve forms air cushion on interior sleeve lining, it is therefore prevented that silicon wall surface deposition, reduce maintenance time and
Loss of material.
Description of the drawings
Fig. 1 is a kind of structure diagram of the granular polycrystalline silicon fluid bed process units of sound wave auxiliary of the present invention.
Fig. 2 is the structure diagram of the inner sleeve of the present invention.
Fig. 3 is the structure diagram of the annulus even gas distribution device of the present invention.
Fig. 4 is the overlooking the structure diagram of the cone-shaped ring even gas distribution device of the present invention.
Fig. 5 is the positive structure diagram of the cone-shaped ring even gas distribution device of the present invention.
Wherein：1 is sonic generator, and 2 be crystal seed inlet tube, and 3 be fluid bed outer wall, and 4 be cone-shaped ring face, and 5 be inner sleeve
Cylinder, 6 be annulus even gas distribution device, and 7 be annulus closing surface, and 8 be cone-shaped ring even gas distribution device, and 9 be discharge nozzle, and 10 be concentric locking collar
Pipe, 11 be the first hydrogen inlet, and 12 be heater, and 13 be the second hydrogen inlet, and 14 be outlet port, and 31 seal for upper circular cone
Head, 32 be cylindrical wall, and 33 be lower circular cone end socket, and 51 be stomata, and 61 be stomata, and 81 be stomata, and 82 be discharge port.
Specific embodiment
Below in conjunction with attached drawing 1, attached drawing 2, attached drawing 3, attached drawing 4 and attached drawing 5 are made the present invention by embodiment further detailed
Description.
Embodiment 1
A kind of granular polycrystalline silicon fluid bed process units of sound wave auxiliary is by sonic generator 1, fluid bed outer wall 3, taper
Anchor ring 4, inner sleeve 5, annulus even gas distribution device 6, annulus closing surface 7, cone-shaped ring even gas distribution device 8, discharge nozzle 9, with one heart
Casing 10 and heater 12 are formed；Fluid bed outer wall 3 is made of upper circular cone end socket 31, cylindrical wall 32 and lower circular cone end socket 33；Circle
The side of cone end socket 31 is provided with crystal seed inlet tube 2 and outlet port 14；Cylindrical wall 32 passes through cone-shaped ring face 4 and inner sleeve
5 upper end connection is connected, with the intermediate of inner sleeve 5 by annulus closing surface 7 and inner sleeve 5 by annulus even gas distribution device 6
Lower end connects；Cone-shaped ring face 4, inner sleeve 5, cylindrical wall 32 and annulus even gas distribution device 6 define first gas cushion chamber；Circle
Ring closing surface 7, inner sleeve 5, cylindrical wall 32 and annulus even gas distribution device 6 define second gas cushion chamber；Second hydrogen inlet
13 are arranged on cylindrical wall 32 and are connected with first gas cushion chamber；The heater 12 is arranged on the interior of second gas cushion chamber
Portion；The outer edge of cone-shaped ring even gas distribution device 8 is connected with the inside edge of annulus closing surface 7, the discharge port 82 of even gas distribution device 8
It is connected with one end of discharge nozzle 9, discharge nozzle 9 passes through lower circular cone end socket；The annulus closing surface 7, cone-shaped ring even gas distribution device
8th, discharge nozzle 9 and lower circular cone end socket 33 define third gas cushion chamber；It states the first hydrogen inlet 11 and is arranged on lower circular cone end socket
It is connected on 33 and with third gas cushion chamber；Concentric tubes 10 are through discharge nozzle 9 and are deep into the inside of process units.Concentric locking collar
The central shaft of pipe 10 and the center overlapping of axles of discharge nozzle 9, and the outer diameter of concentric tubes 10 is less than 10 mm of internal diameter of discharge nozzle 9.It is interior
The stomata 51 of a diameter of 3 mm is provided on sleeve 5, the percent opening of inner sleeve 5 is 5%.It is provided on annulus even gas distribution device 6 a diameter of
The stomata 61 of 0.5 mm, the percent opening of annulus even gas distribution device 6 is 15%.A diameter of 5 are provided on cone-shaped ring even gas distribution device 8
The stomata 81 of mm, the percent opening of cone-shaped ring even gas distribution device 8 is 10%.The central shaft phase of the central shaft of stomata 51 and inner sleeve 5
The angle value that friendship forms the angle of cut ɑ, ɑ is 10 degree.
Embodiment 2
A kind of granular polycrystalline silicon fluid bed process units of sound wave auxiliary is by sonic generator 1, fluid bed outer wall 3, taper
Anchor ring 4, inner sleeve 5, annulus even gas distribution device 6, annulus closing surface 7, cone-shaped ring even gas distribution device 8, discharge nozzle 9, with one heart
Casing 10 and heater 12 are formed；Fluid bed outer wall 3 is made of upper circular cone end socket 31, cylindrical wall 32 and lower circular cone end socket 33；Circle
The side of cone end socket 31 is provided with crystal seed inlet tube 2 and outlet port 14；Cylindrical wall 32 passes through cone-shaped ring face 4 and inner sleeve
5 upper end connection is connected, with the intermediate of inner sleeve 5 by annulus closing surface 7 and inner sleeve 5 by annulus even gas distribution device 6
Lower end connects；Cone-shaped ring face 4, inner sleeve 5, cylindrical wall 32 and annulus even gas distribution device 6 define first gas cushion chamber；Circle
Ring closing surface 7, inner sleeve 5, cylindrical wall 32 and annulus even gas distribution device 6 define second gas cushion chamber；Second hydrogen inlet
13 are arranged on cylindrical wall 32 and are connected with first gas cushion chamber；The heater 12 is arranged on the interior of second gas cushion chamber
Portion；The outer edge of cone-shaped ring even gas distribution device 8 is connected with the inside edge of annulus closing surface 7, the discharge port 82 of even gas distribution device 8
It is connected with one end of discharge nozzle 9, discharge nozzle 9 passes through lower circular cone end socket；The annulus closing surface 7, cone-shaped ring even gas distribution device
8th, discharge nozzle 9 and lower circular cone end socket 33 define third gas cushion chamber；It states the first hydrogen inlet 11 and is arranged on lower circular cone end socket
It is connected on 33 and with third gas cushion chamber；Concentric tubes 10 are through discharge nozzle 9 and are deep into the inside of process units.Concentric locking collar
The central shaft of pipe 10 and the center overlapping of axles of discharge nozzle 9, and the outer diameter of concentric tubes 10 is less than 50 mm of internal diameter of discharge nozzle 9.It is interior
The stomata 51 of a diameter of 2 mm is provided on sleeve 5, the percent opening of inner sleeve 5 is 10%.Diameter is provided on annulus even gas distribution device 6
For the stomata 61 of 2 mm, the percent opening of annulus even gas distribution device 6 is 10%.A diameter of 2 are provided on cone-shaped ring even gas distribution device 8
The stomata 81 of mm, the percent opening of cone-shaped ring even gas distribution device 8 is 18%.The central shaft phase of the central shaft of stomata 51 and inner sleeve 5
The angle value that friendship forms the angle of cut ɑ, ɑ is 45 degree.
Embodiment 3
A kind of granular polycrystalline silicon fluid bed process units of sound wave auxiliary is by sonic generator 1, fluid bed outer wall 3, taper
Anchor ring 4, inner sleeve 5, annulus even gas distribution device 6, annulus closing surface 7, cone-shaped ring even gas distribution device 8, discharge nozzle 9, with one heart
Casing 10 and heater 12 are formed；Fluid bed outer wall 3 is made of upper circular cone end socket 31, cylindrical wall 32 and lower circular cone end socket 33；Circle
The side of cone end socket 31 is provided with crystal seed inlet tube 2 and outlet port 14；Cylindrical wall 32 passes through cone-shaped ring face 4 and inner sleeve
5 upper end connection is connected, with the intermediate of inner sleeve 5 by annulus closing surface 7 and inner sleeve 5 by annulus even gas distribution device 6
Lower end connects；Cone-shaped ring face 4, inner sleeve 5, cylindrical wall 32 and annulus even gas distribution device 6 define first gas cushion chamber；Circle
Ring closing surface 7, inner sleeve 5, cylindrical wall 32 and annulus even gas distribution device 6 define second gas cushion chamber；Second hydrogen inlet
13 are arranged on cylindrical wall 32 and are connected with first gas cushion chamber；The heater 12 is arranged on the interior of second gas cushion chamber
Portion；The outer edge of cone-shaped ring even gas distribution device 8 is connected with the inside edge of annulus closing surface 7, the discharge port 82 of even gas distribution device 8
It is connected with one end of discharge nozzle 9, discharge nozzle 9 passes through lower circular cone end socket；The annulus closing surface 7, cone-shaped ring even gas distribution device
8th, discharge nozzle 9 and lower circular cone end socket 33 define third gas cushion chamber；It states the first hydrogen inlet 11 and is arranged on lower circular cone end socket
It is connected on 33 and with third gas cushion chamber；Concentric tubes 10 are through discharge nozzle 9 and are deep into the inside of process units.Concentric locking collar
The central shaft of pipe 10 and the center overlapping of axles of discharge nozzle 9, and the outer diameter of concentric tubes 10 is less than 25 mm of internal diameter of discharge nozzle 9.It is interior
The stomata 51 of a diameter of 1 mm is provided on sleeve 5, the percent opening of inner sleeve 5 is 8%.It is provided on annulus even gas distribution device 6 a diameter of
The stomata 61 of 1 mm, the percent opening of annulus even gas distribution device 6 is 12%.A diameter of 4 mm is provided on cone-shaped ring even gas distribution device 8
Stomata 81, the percent opening of cone-shaped ring even gas distribution device 8 is 13%.The central shaft of stomata 51 intersects with the central shaft of inner sleeve 5
The angle value for forming the angle of cut ɑ, ɑ is 15 degree.
Embodiment 4
A kind of granular polycrystalline silicon fluid bed process units of sound wave auxiliary is by sonic generator 1, fluid bed outer wall 3, taper
Anchor ring 4, inner sleeve 5, annulus even gas distribution device 6, annulus closing surface 7, cone-shaped ring even gas distribution device 8, discharge nozzle 9, with one heart
Casing 10 and heater 12 are formed；Fluid bed outer wall 3 is made of upper circular cone end socket 31, cylindrical wall 32 and lower circular cone end socket 33；Circle
The side of cone end socket 31 is provided with crystal seed inlet tube 2 and outlet port 14；Cylindrical wall 32 passes through cone-shaped ring face 4 and inner sleeve
5 upper end connection is connected, with the intermediate of inner sleeve 5 by annulus closing surface 7 and inner sleeve 5 by annulus even gas distribution device 6
Lower end connects；Cone-shaped ring face 4, inner sleeve 5, cylindrical wall 32 and annulus even gas distribution device 6 define first gas cushion chamber；Circle
Ring closing surface 7, inner sleeve 5, cylindrical wall 32 and annulus even gas distribution device 6 define second gas cushion chamber；Second hydrogen inlet
13 are arranged on cylindrical wall 32 and are connected with first gas cushion chamber；The heater 12 is arranged on the interior of second gas cushion chamber
Portion；The outer edge of cone-shaped ring even gas distribution device 8 is connected with the inside edge of annulus closing surface 7, the discharge port 82 of even gas distribution device 8
It is connected with one end of discharge nozzle 9, discharge nozzle 9 passes through lower circular cone end socket；The annulus closing surface 7, cone-shaped ring even gas distribution device
8th, discharge nozzle 9 and lower circular cone end socket 33 define third gas cushion chamber；It states the first hydrogen inlet 11 and is arranged on lower circular cone end socket
It is connected on 33 and with third gas cushion chamber；Concentric tubes 10 are through discharge nozzle 9 and are deep into the inside of process units.Concentric locking collar
The central shaft of pipe 10 and the center overlapping of axles of discharge nozzle 9, and the outer diameter of concentric tubes 10 is less than 40 mm of internal diameter of discharge nozzle 9.It is interior
The stomata 51 of a diameter of 2 mm is provided on sleeve 5, the percent opening of inner sleeve 5 is 6%.It is provided on annulus even gas distribution device 6 a diameter of
The stomata 61 of 1.5 mm, the percent opening of annulus even gas distribution device 6 is 14%.A diameter of 3 are provided on cone-shaped ring even gas distribution device 8
The stomata 81 of mm, the percent opening of cone-shaped ring even gas distribution device 8 is 15%.The central shaft phase of the central shaft of stomata 51 and inner sleeve 5
The angle value that friendship forms the angle of cut ɑ, ɑ is 35 degree.
Claims (6)
1. a kind of granular polycrystalline silicon fluid bed process units of sound wave auxiliary, it is characterised in that the process units is sent out by sound wave
Raw device, fluid bed outer wall, cone-shaped ring face, inner sleeve, annulus even gas distribution device, annulus closing surface, cone-shaped ring even gas distribution
Device, discharge nozzle, concentric tubes and heater are formed；The fluid bed outer wall is sealed by upper circular cone end socket, cylindrical wall and lower circular cone
Head composition；The side of the upper circular cone end socket is provided with crystal seed inlet tube and outlet port, and the cylindrical wall side surface upper part is set
There is the second hydrogen inlet, the lower circular cone end socket side is equipped with the first hydrogen inlet；The cylindrical wall by cone-shaped ring face with
The upper end connection of inner sleeve is connected by the centre of annulus even gas distribution device and inner sleeve, passes through annulus closing surface and inner sleeve
Lower end connection；The cone-shaped ring face, inner sleeve, cylindrical wall and annulus even gas distribution device define first gas cushion chamber；
The annulus closing surface, inner sleeve, cylindrical wall and annulus even gas distribution device define second gas cushion chamber；Second hydrogen
Import is connected with first gas cushion chamber；The heater is arranged on the inside of second gas cushion chamber；The cone-shaped ring
The outer edge of even gas distribution device is connected with the inside edge of annulus closing surface, and the discharge port of even gas distribution device and one end of discharge nozzle connect
It connects, the discharge nozzle passes through lower circular cone end socket；The annulus closing surface, cone-shaped ring even gas distribution device, discharge nozzle and lower circular cone
End socket defines third gas cushion chamber；First hydrogen inlet is connected with third gas cushion chamber；The concentric tubes are worn
It crosses discharge nozzle and is deep into the inside of process units.
2. process units according to claim 1, it is characterised in that the central shafts of the concentric tubes and discharge nozzle
Center overlapping of axles, and the outer diameter of concentric tubes is less than 10 ~ 50 mm of internal diameter of discharge nozzle.
3. process units according to claim 1, it is characterised in that be provided with a diameter of 1 ~ 3 mm's on the inner sleeve
Stomata, the percent opening of inner sleeve is 5 ~ 10%.
4. process units according to claim 1, it is characterised in that be provided on the annulus even gas distribution device a diameter of
The stomata of 0.5 ~ 2 mm, the percent opening of annulus even gas distribution device is 10 ~ 15%.
5. process units according to claim 1, it is characterised in that be provided on the cone-shaped ring even gas distribution device straight
Footpath is the stomata of 2 ~ 5 mm, and the percent opening of cone-shaped ring even gas distribution device is 10 ~ 18%.
6. process units according to claim 3, it is characterised in that the central shaft of the stomata and the center of inner sleeve
The angle value that axis is crossed to form the angle of cut ɑ, ɑ is 10 ~ 45 degree.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107715815A (en) * | 2017-11-01 | 2018-02-23 | 宁波工程学院 | A kind of granular polycrystalline silicon fluid bed process units of sound wave auxiliary |
| CN110052314A (en) * | 2019-05-22 | 2019-07-26 | 福州大学 | The structure and application method of enhanced type fluidized bed |
| CN112996592A (en) * | 2018-11-14 | 2021-06-18 | 巴斯夫欧洲公司 | Process for producing superabsorbers |
-
2017
- 2017-11-01 CN CN201721439055.8U patent/CN207430271U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107715815A (en) * | 2017-11-01 | 2018-02-23 | 宁波工程学院 | A kind of granular polycrystalline silicon fluid bed process units of sound wave auxiliary |
| CN112996592A (en) * | 2018-11-14 | 2021-06-18 | 巴斯夫欧洲公司 | Process for producing superabsorbers |
| CN110052314A (en) * | 2019-05-22 | 2019-07-26 | 福州大学 | The structure and application method of enhanced type fluidized bed |
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