CN207418858U - Chemical vapor depsotition equipment - Google Patents
Chemical vapor depsotition equipment Download PDFInfo
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- CN207418858U CN207418858U CN201721380853.8U CN201721380853U CN207418858U CN 207418858 U CN207418858 U CN 207418858U CN 201721380853 U CN201721380853 U CN 201721380853U CN 207418858 U CN207418858 U CN 207418858U
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Abstract
The utility model provides a kind of chemical vapor depsotition equipment, and the chemical vapor depsotition equipment includes：Reaction cavity；Vacuum provides device, and the vacuum provides device and provides the in vivo vacuum of reaction chamber；Reaction gas is supplied in the reaction cavity by source feedway, the source feedway；Tubular heater, the tubular heater are in the reaction cavity, have open both ends and the tube chamber for accommodating growth substrate；Catalyst transmission device, the catalyst transmission device are in the reaction cavity, for catalyst transmission to be passed through tube chamber.
Description
Technical field
The utility model is related to chemical vapour deposition technique field more particularly to a kind of chemical vapor depsotition equipments.
Background technology
CVD technology is the abbreviation of chemical vapor deposition Chemical Vapor Deposition.Chemical vapor deposition is logical
The mode of chemical reaction is crossed, using various energy such as heating, plasma excitation or light radiation, gaseous state or steam are made in reactor
The chemical substance of state forms the technology of solid deposited object in gas phase or gas-solid interface through chemical reaction.
Graphene and hexagonal boron nitride are current popular two-dimensional materials.It all can not be most but any of which is individually a kind of
Bigization realizes their value.Stone can be opened by theoretically and experimentally all pointing out the laminated construction of hexagonal boron nitride and graphene
The energy band band gap of black alkene, and can largely improve the electron mobility of graphene.
At present, for the growth of two-dimensional material, the CVD equipment overwhelming majority of use is all hot-wall tube furnace.Hot-wall tube
Stove can prepare the film not high to growth vacuum level requirements, but the repeatability tested is poor.Moreover, preparing two dimension six
It is found in the practice of square boron nitride-two-dimensional graphene laminated construction, in low vacuum equipment, has grown first layer hexagonal boron nitride
Afterwards, boron nitride can be aoxidized.In addition, for this growth course for being strongly depend on catalyst, it can't based on current source
It is grown in the case where departing from catalyst.However, although the MOCVD device for being directed to preparation iii-v hetero-junctions meets
It is required that but cost is again too expensive.
Utility model content
In view of this, the utility model provides a kind of chemical vapor depsotition equipment.
In one aspect, the utility model provides a kind of chemical vapor depsotition equipment, the chemical vapor depsotition equipment
Including：
Reaction cavity；
Vacuum provides device, and the vacuum provides device and provides the in vivo vacuum of reaction chamber；
Reaction gas is supplied in the reaction cavity by source feedway, the source feedway；
Tubular heater, the tubular heater are in the reaction cavity, have open both ends and for accommodating
The tube chamber of growth substrate；
Catalyst transmission device, the catalyst transmission device is in the reaction cavity, for catalyst to be transmitted
By tube chamber.
Preferably, the cross section of the tubular heater is rectangle.
Preferably, the tubular heater horizontal setting.
Preferably, the chemical vapor depsotition equipment further includes growth substrate apparatus for adjusting position.
Preferably, the growth substrate apparatus for adjusting position is heater height regulating device.
Preferably, the reaction cavity is cold wall reaction cavity.
Preferably, the reaction cavity has double-deck double wall water cooled housing.
Preferably, the source feedway includes reaction source memory.
Preferably, the source of the source feedway is liquid source and/or gaseous source.
Preferably, the source feedway includes for the reaction source memory of liquid source and by reacting source memory
Carrier gas bubbler.
Preferably, the reaction source memory includes cooler.
Preferably, the cooler is semiconductor cold-trap.
Preferably, reaction gas is introduced directly into tube chamber by the source feedway.
Preferably, the catalyst transmission device is roll-to-roll conveyer belt, for catalyst to be made to be heated via the tubulose
One end of device enters the tube chamber, and leaves the tube chamber via the other end of the tubular heater.
Preferably, the cross section of the tubular heater is rectangle, and bottom surface is used to place growth substrate,
The chemical vapor depsotition equipment further includes growth substrate apparatus for adjusting position, and the growth substrate position adjusts dress
It is heater height regulating device to put,
The reaction cavity has double-deck double wall water cooled housing,
The source of the source feedway is liquid source and gaseous source,
The source feedway includes the reaction source memory for liquid source and the load by the reaction source memory
Enraged bubbler, the reaction source memory include semiconductor cold-trap,
The catalyst transmission device is roll-to-roll conveyer belt, for making the one end of catalyst via the tubular heater
The tube chamber is left into the tube chamber, and via the other end of the tubular heater.
The equipment of the utility model can provide the growing environment of high vacuum, and can be that growth hetero-junctions constantly provides
New catalyst.
Description of the drawings
Fig. 1 is the schematic diagram of an embodiment of the equipment of the utility model.
Fig. 2 is the schematic diagram of an embodiment of fluid supply bubbling mode in the feedway of source.
Fig. 3 is the schematic diagram of an embodiment of tubular heater and catalyst transmission device.
Fig. 4 is the configuration diagram of the embodiment preparation process carried out using the equipment of the present embodiment.
Specific embodiment
With reference to the attached drawing in the utility model embodiment, the technical scheme in the embodiment of the utility model is carried out clear
Chu is fully described by, it is clear that the described embodiments are only a part of the embodiments of the utility model rather than whole realities
Apply example.Embodiment based on the utility model, those of ordinary skill in the art are obtained without making creative work
The every other embodiment obtained, belongs to the scope of protection of the utility model.
Fig. 1 is the schematic diagram of an embodiment of the chemical vapor depsotition equipment of the utility model.The utility model
Chemical vapor depsotition equipment includes：Reaction cavity 1；Vacuum provides device 2, provides the vacuum in the reaction cavity 1；Source supplies
To device 3, reaction gas is supplied in the reaction cavity 1；Tubular heater 4, in the reaction cavity 1,
Tube chamber 6 with open both ends and for accommodating growth substrate；Catalyst transmission device 7 is in the reaction cavity 1
In, for transmitting catalyst 8 by tube chamber 6.
The equipment of the utility model is particularly suitable for preparing multilayer two-dimension material hetero-junctions.
The reaction cavity 1 of the utility model is non-hot wall reaction cavity, provides the environment of high vacuum, but itself does not rise
To the effect of heating.Since reaction cavity using all-metal sealing and is equipped with the valve of high vacuum, thus in existing CVD
The hot-wall tube furnace used is compared, and much higher vacuum degree can be reached in reaction cavity, so as to be conducive to have height to vacuum degree
It is required that chemical vapor deposition processes progress.More preferably it is using cold wall reaction cavity, i.e., cavity wall is made by cooling device
Cool down, dust pollution in very big reduction system.As example, cylinder type chamber is used, cavity is using double-deck double wall water cooling knot
Structure.Double-deck double wall water-cooling structure includes inner wall, outer wall and the water-cooling loop being clipped between inside and outside wall.It is all steel material,
Inside and outside polishing, it is desirable that outer leak rate is less than 10-12mbar·l·s-1, interior leak rate ＜ 10-11mbar·l·s-1.Interface uses copper band
Sealing ensures the vacuum degree of cavity with this.
Vacuum provides device 2 and is connected with reaction cavity 1, and high vacuum is provided into reaction cavity 1.In Fig. 1, skeleton map
Show that vacuum provides device 2, but it there can be complicated structure in practice.As example, vacuum, which provides device 2, to be included
Vacuum acquiring system, vacuum measurement and vacuum-control(led) system.Vacuum acquiring system can be for example with mechanical pump and molecular pump
Pump group, to realize the high vacuum of whole system.The target base vacuum of the system design is 10-3~10-6Pa.So it is selecting
When pump group, the preferred larger molecular pump of pumping speed.Vacuum measurement and control system can be for example, by automatic butterfly valves and vacuum
Measuring instrument forms a closed loop feedback, so as to control the indoor air pressure of reaction chamber so that the condition tested every time can be steady
It is fixed.Vacuum measurement instrument can for example include vacuum gauge and mating power supply.
Source feedway 3 is connected with reaction cavity 1, the supply response gas into reaction cavity 1.Source feedway 3 can be with
Including reacting source memory (not shown), for storage reaction source.In view of the material that can be grown by the equipment of the utility model
The expansibility of material, it is preferable that the equipment is simultaneously equipped with liquid source supply mode 31 and gaseous source supply mode 32.In this way,
When carrying out plane SH wave, even if the type in the source that each layer is applicable in is different, this equipment can also be competent at.Correspondingly, source supply dress
It puts the reaction source memory including being used for liquid reaction source and air inlet component and the reaction source suitable for vapor reaction source stores
Device and air inlet component.It is understood that although liquid source 31 and gaseous source 32 are respectively connected to reaction cavity 1 in Fig. 1,
They can also merge before reaction cavity is entered, that is, share same interface and be connected to reaction cavity.The utility model to this not
It is construed as limiting.
Can be for example closed tank body for the reaction source memory of fluid supply.When the reaction for participating in chemical gas phase reaction
When the boiling point of substance in itself is higher, it is difficult to directly obtain reactant steam.In the case, reactant is carried using carrier gas to enter
Reaction cavity.As shown in Fig. 2, the mode of Bubbling method may be employed in liquid source supply, by gas mass flow gauge to closed
Gas of carrier gas is passed through in the tank body of the source of bank savings.When gas of carrier gas is by liquid reaction material resource bubbling, a part of reactant vaporization to load
In gas bubble, until being close to or up to the saturation in carrier gas.Contain reactant molecule in gas of carrier gas after bubbling.Liquid will be contained
The carrier gas of body source molecule is transported in reaction cavity, so as to which gaseous reactant is carried in reaction cavity.In view of liquid
Source may be needed in Cord blood, and reaction source memory can maintain the required storage temperature of liquid source including cooler.
Cooler can be semiconductor cold-trap.
When being passed through carrier gas, to ensure the amount of reactant, controller unit such as gas mass flow gauge control may be employed and carry
Gas supplies.
Can be conventional gas cylinder, gas tank etc. for the reaction source memory of gaseous source.It is supplied for the gas of gaseous source,
Controller unit such as gas mass flow gauge can equally be used.
When using two or more reactants, before reactant is supplied to reaction cavity, reactant can will be contained
Carrier gas and/or or reactant gas access a mixed gas tank for being used for gas buffer, reaction will be re-supplied to after gas mixing
In cavity.
Preferably, by special pipeline, such as airflow duct (not shown), reaction gas or reaction mixture gas are introduced directly into
Reach high-temperature region so that air-flow accurately can smoothly reach growth substrate surface.
The features described above of source feedway can be freely combined, so as to controllably supply gaseous reactant material to reaction zone.
Tubular heater 4 is in the reaction cavity 1, has open both ends and the pipe for accommodating growth substrate 5
Chamber 6.Tubular heater 4 can be disposed with substantial horizontal.In Fig. 1, growth substrate 5 is directly placed at the bottom of tubular heater 4
Portion, but it can not also be contacted with tubular heater, such as be located at by bed support in tube chamber 6.Tubular heater 4 rises
To heating tube chamber 6 so as to providing the effect of the temperature needed for chemical vapor deposition.
Preferably, the cross section of tubular heater 4 is rectangle.In other words, heater is designed to four face closures, such as Fig. 3
It is shown, only reserve the catalyst movement that two sides open end picks and places and supplements for sample.Tantalum wire may be employed in the heater
Or tungsten filament is heated, and can ensure that temperature reaches the growth temperature of material.And this enclosed heating unit in four sides, it can be with
Stable thermal field is effectively formed, flat-temperature zone becomes longer, so as to be conducive to the homoepitaxial of material.And using rectangular section
Heater, be equivalent in the reaction tube of rectangle and carry out Material growth, and the reaction tube of rectangular section is compared with circular anti-
Should for pipe its horizontal uniformity it is more excellent.
Catalyst transmission device 7 is also in the reaction cavity 1, for transmitting catalyst 8 by tube chamber 6.As
One preferred embodiment, as shown in figure 3, realizing roll-to-roll transmission by two motors for being individually positioned in tube chamber both sides.It uses
The sample carrier of tungsten matter carries the catalyst of suspension.Transmission device can be equipped with speed governing power source, with the work(realized crawl, interlocked
Can, it can also realize the regulation and control of speed speed.The distance entirely transmitted is designed as 30cm~40cm.The motor of transmission is placed on pipe
Outside chamber, prevent the lubricant in motor from polluting tube chamber under high temperature high vacuum condition.
In one embodiment, chemical vapor depsotition equipment further includes growth substrate relative position regulating device.Growth
Substrate relative position regulating device is for adjusting growth substrate and the relative position of catalyst, so as to promote to deposit.Therefore, grow
Substrate relative position regulating device can adjust the position of growth substrate or adjust the position of catalyst or adjust the two simultaneously.
In Fig. 1, growth substrate relative position regulating device 9, which is portrayed as, is connected on tubular heater 4, by adjusting tubular heater
4 position drives growth substrate 5, so as to adjust the relative position between catalyst 8.It is to be understood that growth substrate is opposite
Apparatus for adjusting position 9 can also be connected on catalyst transmission device 7, the first-class suitable position of growth substrate 5.
Preferably, heater height regulating device is attached on tubular heater, is adjusted as growth substrate relative position
Device 9.One example of heater height regulating device includes lifting motor and lifting motor axis, and tubular heater can be made whole
It lifts, as shown in FIG. 3 body.Pass through tubular heater integral elevating, thus it is possible to vary place growth base on its bottom surface
Relative distance between bottom and suspended catalyst.
The all parts of the equipment of the utility model are described in detail above in association with Fig. 1, but the utility model is without being limited thereto.
Those skilled in the art can be modified all parts in the case where not departing from the spirit of the utility model.Each component
Feature can be combined as needed.
In an especially preferred embodiment,
The tubular heater is horizontal positioned, and cross section is rectangle, and bottom surface is used to place growth substrate,
The chemical vapor depsotition equipment further includes growth substrate relative position regulating device, and the growth substrate is with respect to position
It is heater height regulating device to put regulating device,
The reaction cavity has double-deck double wall water cooled housing,
The source of the source feedway is liquid source and gaseous source,
The source feedway includes the reaction source memory for liquid source and the carrier gas by the reaction memory
Bubbler, the reaction source memory include semiconductor cold-trap,
The catalyst transmission device is roll-to-roll conveyer belt, for making the one end of catalyst via the tubular heater
The tube chamber is left into the tube chamber, and via the other end of the tubular heater.
The equipment of the utility model can provide high vacuum, while easily can supplement catalyst to reaction zone.This reality
With the new CVD processes particularly suitable for being required to vacuum degree and catalyst change, such as two-dimentional hexagonal boron nitride-two dimension
It is prepared by the CVD of graphene laminated construction.
Therefore, the utility model provides the equipment of the utility model and is used to prepare two-dimentional hexagonal boron nitride-two dimension graphite
The purposes of alkene laminated construction.
" two dimension " described in the utility model includes but not limited to monoatomic layer.
The utility model also relates to the chemical vapor deposition method carried out using the equipment, including：Reaction cavity is provided
Interior vacuum, wherein be provided with tubular heater in the reaction cavity, the tubular heater have open both ends and
For accommodating the tube chamber of growth substrate, wherein the growth substrate has been placed in tube chamber；Reaction gas is passed through into reaction cavity
Body；By catalyst transmission by tube chamber；And heat the tube chamber with the tubular heater；So that the reaction gas is in institute
It states and reacts under the action of catalyst and deposit in the growth substrate.
Chemical vapor deposition method using the equipment of the utility model is individually added in vacuum cavity with tubular heater
Heat pipe chamber is used for deposit growth, and can supplement catalyst to reaction zone at any time, particularly suitable for vacuum degree and catalysis
The CVD processes that agent replacement requires.
The equipment that the utility model also relates to the utility model is used to prepare two-dimentional hexagonal boron nitride-two-dimensional graphene and folds
The purposes of layer structure.
It is further retouched in detail below in conjunction with the preparation process work of two-dimentional hexagonal boron nitride-two-dimensional graphene laminated construction
It states, in favor of understanding the utility model.
The preparation of two-dimentional hexagonal boron nitride-two-dimensional graphene laminated construction
It is prepared using the equipment of the utility model.First using as the 25 of growth substrate microns of thick copper foils and as
50 microns of thick copper foils of catalyst are loaded by living open the door on reaction cavity in reaction cavity.It is provided in reaction cavity
The tubular heater of the rectangular section of horizontal setting as shown in Figure 3 and roll-to-roll catalyst transmission device.Growth substrate is placed on
On the bottom surface of heater, catalyst, which is put on the tungsten bracket of catalyst conveyer belt, is used as suspended catalyst.Tubular heater is with rising
Drop motor is connected.By controlling lifting motor, adjustment the distance between growth substrate and suspended catalyst is within 1 millimeter.So
Afterwards by reaction cavity good seal.The cooling water system of reaction cavity is opened, keeps shell cavity cooling.It opens vacuum and device is provided
Molecule pump group, wait the in vivo base vacuum of reaction chamber reach 10-6pa.Heating unit is connected, 1050 DEG C are carried out to substrate
Annealing.After the completion of annealing, temperature is set to 1000 DEG C of target growth temperature, waiting temperature is stablized.
Then the growth of two-dimentional hexagonal boron is carried out.For hexagonal boron, liquid source borazine is used.It is logical
The source feedway of mistake is passed through process gas.Specifically, in the reaction source memory for accommodating liquid borazine, bubbling is opened
Device valve is passed through the carrier gas nitrogen of 0.5sccm flows by gas mass flow gauge, will be for growing the forerunner of hexagonal boron nitride
Body is loaded into from liquid source in carrier gas nitrogen.By buffering after the mixed gas tank of carrier gas arrival, pass through gas conduit and reach high temperature
Vitellarium.Setting growth air pressure 3Pa, makes the process atmospheric pressures of entire growth course be in a controlled state.During this, hang
Floating catalyst is without mobile, because growth substrate copper foil can be as the catalyst to growth hexagonal boron nitride.At 1000 DEG C by life
After 20 minutes for a long time, two-dimentional hexagonal boron growth finishes.
Then, the air intake valve of liquid source and the gas mass flow gauge on this road are closed, opens inert gas flowmeter
System is purged, in order to make the growth of subsequent graphene from the influence of residual gas.
After purged, inert gas is closed.Reusing vacuum offer device rises system vacuum until stablizing.With
Afterwards, start to grow graphene.The growth of graphene uses gaseous source methane, by air intake valve and mass flowmenter, through too slow
It rushes area and gas conduit reaches high growth temperature area.During graphene growth, start catalyst transmission device, this is because in life
After having grown hexagonal boron, the catalytic action of growth substrate shielded, it is necessary to continually introduce new catalyst copper could be into
The growth of row graphene.The pattern of transmission can select gearing or Manual Mode, under normal circumstances, Manual Mode, and
And the distance of each crawl is determined according to the size of substrate and the speed of growth.In the present embodiment, each crawl away from
From for 1 centimetre.At a temperature of 1000 DEG C, after the growth of 30 minutes, hexagonal boron nitride is completely covered in graphene, obtains two
Tie up hexagonal boron nitride-two-dimensional graphene laminated construction.
Using the equipment of the utility model, good two-dimentional hexagonal boron nitride-two dimension can be made with high repeatability
Graphene laminated construction, and cost is not high.
The equipment of the utility model can not only prepare the lamination of two kinds of materials with chemical vapor deposition, come from autgmentability
It says, can also be used to prepare the lamination of three kinds or more materials, such as hexagonal boron nitride-three layers of graphene-hexagonal boron nitride is heterogeneous
Junction structure, on condition that these materials are synthesized suitable for CVD method.
Fig. 4 is the configuration diagram of the embodiment of the utility model, schematically illustrates each several part of the utility model
Between functional relationship.The system of the utility model can be divided into three parts：Source supply system, growth chamber and periphery system
System.
Source supply system includes liquid source and gaseous source, is respectively provided with flowmeter control gas flow.Reaction gas is through slow
Enter reaction cavity after punching.There are tubular heater and temperature measuring equipment in reaction cavity, middle part constant high temperature and both ends open are provided
Vitellarium.Catalyst transmission system transports catalyst to vitellarium.As growth substrate relative position regulating device, reaction chamber
There can be heater lifting gear in body.Vacuum measurement instrument is further included in reaction cavity, the groups such as vacuum pump with periphery
Vacuum into closed loop feedback provides device.Water-cooling system is further included in reaction cavity, keeps reaction cavity cold wall.In peripheral system
Necessary power supply and control system are further included, such as hardware, software, human-computer interaction interface etc. can be included.
The device structure of the utility model is concise, can keep high vacuum environment, can continue supplement catalyst, Ke Yiling
The position living for adjusting catalyst and growth substrate, and suitable for different types of reactant source.
The utility model is illustrated above by drawings and examples.It should be appreciated that the scope of the utility model is not limited to
This.Those skilled in the art can repair embodiments herein in the case where not departing from the precursor of spirit of the utility model
Change and change.
Claims (15)
1. a kind of chemical vapor depsotition equipment, the chemical vapor depsotition equipment includes：
Reaction cavity；
Vacuum provides device, and the vacuum provides device and provides the in vivo vacuum of reaction chamber；
Reaction gas is supplied in the reaction cavity by source feedway, the source feedway；
Tubular heater, the tubular heater are in the reaction cavity, are had open both ends and are grown for accommodating
The tube chamber of substrate；
Catalyst transmission device, the catalyst transmission device are in the reaction cavity, are passed through for catalyst to be transmitted
The tube chamber.
2. chemical vapor depsotition equipment according to claim 1, wherein,
The cross section of the tubular heater is rectangle.
3. chemical vapor depsotition equipment according to claim 1, wherein,
The tubular heater horizontal setting.
4. chemical vapor depsotition equipment according to claim 1, the chemical vapor depsotition equipment further includes growth substrate
Relative position regulating device.
5. chemical vapor depsotition equipment according to claim 4, wherein,
The growth substrate relative position regulating device is heater height regulating device.
6. chemical vapor depsotition equipment according to claim 1, wherein,
The reaction cavity is cold wall reaction cavity.
7. chemical vapor depsotition equipment according to claim 1, wherein,
The reaction cavity has double-deck double wall water cooled housing.
8. chemical vapor depsotition equipment according to claim 1, wherein,
The source feedway includes reaction source memory.
9. chemical vapor depsotition equipment according to claim 1, wherein,
The source of the source feedway is liquid source and/or gaseous source.
10. chemical vapor depsotition equipment according to claim 1, wherein,
The source feedway includes the reaction source memory for liquid source and the carrier gas bubbler by reacting source memory.
11. chemical vapor depsotition equipment according to claim 10, wherein,
The reaction source memory for liquid source includes cooler.
12. chemical vapor depsotition equipment according to claim 11, wherein,
The cooler is semiconductor cold-trap.
13. chemical vapor depsotition equipment according to claim 1, wherein, the source feedway is direct by reaction gas
It is introduced into the tube chamber.
14. chemical vapor depsotition equipment according to claim 1, wherein,
The catalyst transmission device is roll-to-roll conveyer belt, for catalyst to be made to enter via one end of the tubular heater
The tube chamber, and leave the tube chamber via the other end of the tubular heater.
15. chemical vapor depsotition equipment according to claim 1, wherein,
The cross section of the tubular heater is rectangle, and bottom surface is used to place growth substrate,
The chemical vapor depsotition equipment further includes growth substrate relative position regulating device, the growth substrate relative position tune
Regulating device is heater height regulating device,
The reaction cavity has double-deck double wall water cooled housing,
The source of the source feedway is liquid source and gaseous source,
The source feedway includes rousing for the reaction source memory of liquid source and by the carrier gas of the reaction source memory
Bubbler, the reaction source memory include semiconductor cold-trap,
The catalyst transmission device is roll-to-roll conveyer belt, for catalyst to be made to enter via one end of the tubular heater
The tube chamber, and leave the tube chamber via the other end of the tubular heater.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201721380853.8U CN207418858U (en) | 2017-10-24 | 2017-10-24 | Chemical vapor depsotition equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201721380853.8U CN207418858U (en) | 2017-10-24 | 2017-10-24 | Chemical vapor depsotition equipment |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107815664A (en) * | 2017-10-24 | 2018-03-20 | 中国科学技术大学 | Chemical vapor depsotition equipment, method and purposes |
| CN109402605A (en) * | 2018-11-15 | 2019-03-01 | 中国人民大学 | A kind of preparation method of the graphene that the large area number of plies is controllable and hexagonal boron nitride hetero-junctions |
| CN110894597A (en) * | 2018-09-13 | 2020-03-20 | 长鑫存储技术有限公司 | Chemical vapor deposition device and spray head thereof |
-
2017
- 2017-10-24 CN CN201721380853.8U patent/CN207418858U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107815664A (en) * | 2017-10-24 | 2018-03-20 | 中国科学技术大学 | Chemical vapor depsotition equipment, method and purposes |
| CN110894597A (en) * | 2018-09-13 | 2020-03-20 | 长鑫存储技术有限公司 | Chemical vapor deposition device and spray head thereof |
| CN109402605A (en) * | 2018-11-15 | 2019-03-01 | 中国人民大学 | A kind of preparation method of the graphene that the large area number of plies is controllable and hexagonal boron nitride hetero-junctions |
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