CN207381406U - GaN semiconductor devices - Google Patents
GaN semiconductor devices Download PDFInfo
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- CN207381406U CN207381406U CN201721026156.2U CN201721026156U CN207381406U CN 207381406 U CN207381406 U CN 207381406U CN 201721026156 U CN201721026156 U CN 201721026156U CN 207381406 U CN207381406 U CN 207381406U
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Abstract
The utility model discloses a kind of GaN semiconductor devices, including：Substrate；The aln seed crystal layer being arranged on the substrate；The buffer layer being arranged on the aln seed crystal layer；The gallium nitride layer being arranged on the buffer layer；XN layers of AlxGa1 being arranged on the gallium nitride layer；The aln layer being arranged on the AlxGa1 xN layers；The p GaN layers being arranged on the aln layer.The structure of above-mentioned GaN semiconductor devices, 2DEG is being grown with after AlGAN films, the structure of insertion aln layer before p GaN layer are deposited, i.e., p GaN/AlN/AlGaN composite membranes or p GaN/AlGaN/AlN/AlGaN composite membranes, remaining P classes gallium nitride layer when removal is gate etch in subsequent technique, improves the distribution of p GaNHEMT device properties.
Description
Technical field
The utility model is related to technical field of semiconductors, more particularly to a kind of GaN semiconductor devices.
Background technology
The huge market of the 10% of entire semi-conductor market, but electric semiconductor city before are occupied in electric semiconductor market
Field is based on the power device of utilization silicon.Past 20 years, between 10 years, the electric power that Si power device improves 5~6 times was close
Degree, it is difficult to expect further to improve in performance.
Compared with silicon and GaAs, gallium nitride has band gap wide (Eg=3.4eV), stablizes spies such as (700 DEG C) at high temperature
Sign.Compared to silicon electric semiconductor, gallium nitride electric semiconductor has low temperature resistant characteristic, can not only reduce as electric power is partly led
Caused by body-loss of electric brake, it can also accomplish the advantages that system cost electric power is minimized.By gallium nitride semiconductor device
Part minimizes, high voltage, high speed electric brake, can realize low loss, and efficient next generation's electrical device can meet industry
With, power network, the demand of information Office of the Telecommunications Authority.
But because gallium nitride electric semiconductor has normal pass problem, gallium nitride electric power during which cannot be used alone and partly lead
Body will be used together with Si power device.In this way, act the anode structure for having said function using with normally opened.
Just in exploitation, the GaN high electron that wherein gallium nitride stacked crystal layer structure includes migrates normally opened gallium nitride semiconductor
The degree of applying flexibly of rate transistor also steps up.
To embody using the breakdown voltage in gallium nitride electrical device, and the gallium nitride layer to grow high-quality；
It is grown on silicon substrate, e.g., after the seed layers such as aluminium nitride, the quality for improving buffer layer plays an important role.That is, to be apt to use silicon substrate
The two-dimensional electron gas of the undoped gallium nitride layer/aluminium gallium nitride alloy formed on upper aluminium nitride seed layer/aluminium gallium nitride alloy buffer layer
The quality of (2DEG) structure and management are critically important.
Utility model content
Based on this, the purpose of this utility model is to provide a kind of structure of GaN semiconductor devices.
Specific technical solution is as follows：
A kind of GaN semiconductor devices, including：
Substrate；
The crystal seed layer being arranged on the substrate；
The buffer layer being arranged on the crystal seed layer；
The gallium nitride layer being arranged on the buffer layer；
The AlxGa1-xN layers being arranged on the gallium nitride layer；
The aln layer being arranged on the AlxGa1-xN layers；
The p-GaN layer being arranged on the aln layer.
In wherein some embodiments, the p-GaN layer, the aln layer and it is described AlxGa1-xN layers in Al
Content is incremented by successively.
In wherein some embodiments, aluminum gallium nitride is additionally provided between the aln layer and the p-GaN layer.
In wherein some embodiments, the p-GaN layer, the aln layer, the aluminum gallium nitride and described
The content of Al is incremented by successively in AlxGa1-xN layers.
In wherein some embodiments, the thickness of the aluminum gallium nitride is 3nm~50nm.
In wherein some embodiments, the material of the crystal seed layer is aluminium nitride, gallium nitride or aluminium gallium nitride alloy.
In wherein some embodiments, the material of the buffer layer is aluminium nitride, gallium nitride or aluminium gallium nitride alloy.
In wherein some embodiments, the gallium nitride layer is Carbon deposition gallium nitride layer, undoped gallium nitride layer or compound
Layer, Carbon deposition gallium nitride layer and undoped gallium nitride layer of the composite bed for multilayer interaction cascading.
In wherein some embodiments, the thickness of the crystal seed layer is 0.5um~10um；The thickness of the buffer layer is
0.1um~1um；Thickness AlxGa1-xN layers described is 1nm~10nm；The thickness of the p-GaN layer is 40nm~150nm.
The another object of the utility model is to provide a kind of semiconductor device, including above-mentioned GaN semiconductor devices.
Enhance high electron mobility transistor (Enhancement HEMT) structure to embody, use transistor (MISFET
Transistor) structure and p-type gallium nitride.During using P class gallium nitride HETM structures, P class gallium nitride layers are formed.After next
Continuous technique, especially to be formed in the P class gallium nitride etch process of grid, P classes gallium nitride film etching degree is different, can cause
Remaining p classes gallium nitride layer or the aluminum gallium nitride meeting over etching positioned at p class gallium nitride, cause p-GaN HEMT device characteristics
It is bad to spread (such as Fig. 1-Fig. 3).
The structure of above-mentioned GaN semiconductor devices is growing 2DEG with after AlGAN films, before p-GaN layer vapor depositions
It is inserted into the structure of aln layer, i.e. p-GaN/AlN/AlGaN composite membranes or p-GaN/AlGaN/AlN/AlGaN composite membranes.
In the follow-up p class gallium nitride etch process for grid, since p classes gallium nitride film and aluminium nitride film etch quantity are poor, it can remove
Remaining P classes gallium nitride layer when being gate etch in subsequent technique, aluminium nitride film play the role of etch-stop, can effectively manage
The thickness of aluminum gallium nitride is managed, improves the distribution of p-GaN HEMT device characteristics.
Description of the drawings
Fig. 1 is the structure of existing GaN semiconductor devices；
Fig. 2 is the situation of p class gallium nitride layer over etchings in existing GaN semiconductor devices；
Fig. 3 is the situation of p class gallium nitride layer undercuts in existing GaN semiconductor devices；
Fig. 4 be an embodiment GaN semiconductor devices structure diagram (101, substrate；102nd, crystal seed layer；103rd, buffer
Layer；104th, gallium nitride layer；105th, AlxGa1-xN layers；106 aln layers；107p-GaN layers)；
Fig. 5 is the situation after embodiment GaN semiconductor devices etching；
Fig. 6 is GaN, the etch-rate curve of AlGaN, AlN.
Specific embodiment
For the ease of understanding the utility model, the utility model will be described more fully below.But this practicality
It is new to realize in many different forms, however it is not limited to embodiment described herein.On the contrary, provide these implementations
The purpose of example is to make the more thorough and comprehensive of the understanding to the disclosure of the utility model.
Unless otherwise defined, all of technologies and scientific terms used here by the article is led with belonging to the technology of the utility model
The normally understood meaning of technical staff in domain is identical.It is simply in the term used in the description of the utility model herein
The purpose of description specific embodiment, it is not intended that in limitation the utility model.Term as used herein "and/or" includes
The arbitrary and all combination of one or more relevant Listed Items.
A kind of GaN semiconductor devices, including：
Substrate 101；
The crystal seed layer 102 being arranged on the substrate 101；
It should be understood that the material of the crystal seed layer 102 is aluminium nitride, gallium nitride or aluminium gallium nitride alloy；
The buffer layer 103 being arranged on the crystal seed layer 102；
It should be understood that the material of the buffer layer 103 is aluminium nitride, gallium nitride or aluminium gallium nitride alloy；
The gallium nitride layer 104 being arranged on the buffer layer 103；
It should be understood that the gallium nitride layer 104 is Carbon deposition gallium nitride layer, undoped gallium nitride layer or composite bed, institute
State the Carbon deposition gallium nitride layer and undoped gallium nitride layer that composite bed is multilayer interaction cascading；
The AlxGa1-xN layers 105 being arranged on the gallium nitride layer 104；Wherein 0<x<1；
The aln layer 106 (as shown in Figure 4) being arranged on the AlxGa1-xN layers 105；When etching p class gallium nitride,
The etch stop layer of etching is terminated in aluminium nitride film.
The p-GaN layer 107 being arranged on the aln layer 106.
The p-GaN layer, the aln layer and it is AlxGa1-xN layers described in Al content it is incremented by successively.
Particularly, it is additionally provided with aluminum gallium nitride between the aln layer and the p-GaN layer.
The p-GaN layer, the aln layer, the aluminum gallium nitride and it is AlxGa1-xN layers described in Al content
It is incremented by successively.
The preparation method of above-mentioned GaN semiconductor devices, includes the following steps：
Obtain substrate；
Aln seed crystal layer Seed layer are formed on the substrate；The material of the crystal seed layer can be aluminium nitride, nitrogen
Change gallium or aluminium gallium nitride alloy；Process parameter control forms the aluminium nitride film of 100nm~200nm thickness at 1000~1150 DEG C.
Buffer layer buffer layer are formed on the aln seed crystal layer；The material of the buffer layer can be nitridation
Aluminium, gallium nitride or aluminium gallium nitride alloy can also be formed as the single film of gallium nitride or aluminium gallium nitride alloy/gallium nitride superlattice layer；Technique is joined
At 1000~1150 DEG C, thickness is formed as 0.5um~10um for number control.
Gallium nitride layer GaN layer are formed on the buffer layer；Process parameter control is in 1000~1150 DEG C of temperature, thickness
Spend 0.1um~1um.
AlxGa1-xN layers are formed on the gallium nitride layer；Process parameter control is in 1000~1150 DEG C of temperature, thickness
3nm~50nm, 0<x<1 Al content.
AlN layers of aluminium nitride is formed on the AlxGa1-xN layers；Process parameter control is in 1000~1150 DEG C of temperature, thickness
Spend 1nm~10nm.
P-GaN layer is formed on the aln layer；Process parameter control in 1000~1150 DEG C of temperature, thickness 40nm~
150nm, Mg concentration 5e18~5e19/cm3The p-GaN layer of doping.
In one embodiment, one layer of aluminum gallium nitride AlGaN is also formed between the aln layer and the p-GaN layer
between AlN and p-GaN；Process parameter control is in 1000~1150 DEG C, thickness 3nm~50nm of temperature, Al content 0
<x<1。
The structure of above-mentioned GaN semiconductor devices is growing 2DEG with after AlGAN films, before p-GaN layer vapor depositions
It is inserted into the structure of aln layer, i.e. p-GaN/AlN/AlGaN composite membranes or p-GaN/AlGaN/AlN/AlGaN composite membranes.
In the follow-up p class gallium nitride etch process for grid, since p classes gallium nitride film and aluminium nitride film etch quantity are poor, it can remove
Remaining P classes gallium nitride layer when being gate etch in subsequent technique, aluminium nitride film play the role of etch-stop, can effectively manage
The thickness of aluminum gallium nitride is managed, improves the distribution of p-GaN HEMT device characteristics.(as shown in Figure 5, Figure 6).
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope that this specification is recorded all is considered to be.
Embodiment described above only expresses the several embodiments of the utility model, and description is more specific and detailed,
But therefore it can not be interpreted as the limitation to utility model patent scope.It should be pointed out that the common skill for this field
For art personnel, without departing from the concept of the premise utility, various modifications and improvements can be made, these are belonged to
The scope of protection of the utility model.Therefore, the protection domain of the utility model patent should be determined by the appended claims.
Claims (10)
1. a kind of GaN semiconductor devices, which is characterized in that including：
Substrate；
The crystal seed layer being arranged on the substrate；
The buffer layer being arranged on the crystal seed layer；
The gallium nitride layer being arranged on the buffer layer；
The AlxGa1-xN layers being arranged on the gallium nitride layer；
The aln layer being arranged on the AlxGa1-xN layers；
The p-GaN layer being arranged on the aln layer.
2. GaN semiconductor devices according to claim 1, which is characterized in that the p-GaN layer, the aln layer with
And it is AlxGa1-xN layers described in Al content it is incremented by successively.
3. GaN semiconductor devices according to claim 1, which is characterized in that the aln layer and the p-GaN layer it
Between be additionally provided with aluminum gallium nitride.
4. GaN semiconductor devices according to claim 3, which is characterized in that the p-GaN layer, the aln layer, institute
State aluminum gallium nitride and it is AlxGa1-xN layers described in Al content it is incremented by successively.
5. GaN semiconductor devices according to claim 4, which is characterized in that the thickness of the aluminum gallium nitride for 3nm~
50nm。
6. according to claim 1-5 any one of them GaN semiconductor devices, which is characterized in that the material of the crystal seed layer is
Aluminium nitride, gallium nitride or aluminium gallium nitride alloy.
7. according to claim 1-5 any one of them GaN semiconductor devices, which is characterized in that the material of the buffer layer is
Aluminium nitride, gallium nitride or aluminium gallium nitride alloy.
8. according to claim 1-5 any one of them GaN semiconductor devices, which is characterized in that the gallium nitride layer sinks for carbon
Product gallium nitride layer, undoped gallium nitride layer or composite bed, the composite bed for multilayer interaction cascading Carbon deposition gallium nitride layer and
Undoped gallium nitride layer.
9. according to claim 1-5 any one of them GaN semiconductor devices, which is characterized in that the thickness of the crystal seed layer is
0.5um~10um；The thickness of the buffer layer is 0.1um~1um；Thickness AlxGa1-xN layers described is 1nm~10nm；Institute
The thickness for stating p-GaN layer is 40nm~150nm.
10. a kind of semiconductor device, which is characterized in that including claim 1-9 any one of them GaN semiconductor devices.
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| CN201721026156.2U CN207381406U (en) | 2017-08-16 | 2017-08-16 | GaN semiconductor devices |
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| CN201721026156.2U CN207381406U (en) | 2017-08-16 | 2017-08-16 | GaN semiconductor devices |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107331699A (en) * | 2017-08-16 | 2017-11-07 | 英诺赛科（珠海）科技有限公司 | GaN semiconductor devices and its preparation method and application |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107331699A (en) * | 2017-08-16 | 2017-11-07 | 英诺赛科（珠海）科技有限公司 | GaN semiconductor devices and its preparation method and application |
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