CN207183265U - A kind of high insulation Breakdown Voltage Power semiconductor device - Google Patents
A kind of high insulation Breakdown Voltage Power semiconductor device Download PDFInfo
- Publication number
- CN207183265U CN207183265U CN201721161286.7U CN201721161286U CN207183265U CN 207183265 U CN207183265 U CN 207183265U CN 201721161286 U CN201721161286 U CN 201721161286U CN 207183265 U CN207183265 U CN 207183265U
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- Prior art keywords
- groove
- side wall
- power semiconductor
- connecting rod
- breakdown voltage
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Abstract
The utility model discloses a kind of high insulation Breakdown Voltage Power semiconductor device, including base, the upper surface of the base is provided with the first groove, and first the bottom of groove be provided with multiple cavitys, two gears are rotatably connected to by first rotating shaft in the cavity, the bottom of the cavity is connected with the two-sided rack with two gear matches by multiple first springs, and the two-sided rack is between two gears, the side wall of two gears is connected with first connecting rod by the second axis of rotation, and first connecting rod is set through the upper end side wall of cavity, two one end of the first connecting rod away from gear are connected with supporting plate by the 3rd axis of rotation, the upper end side wall of the supporting plate is provided with power semiconductor, the bottom of first groove is additionally provided with multiple mounting grooves, and mounting groove is between adjacent cavity.The utility model is simple in construction, easy to operate, enhances the resistance to pressure of power semiconductor, and can be to power semiconductor high efficiency insulation.
Description
Technical field
It the utility model is related to power semiconductor technologies field, more particularly to a kind of high insulation Breakdown Voltage Power semiconductor dress
Put.
Background technology
Power semiconductor is mainly that silicon controlled rectifier (SCR) (SCR), huge transistor (GTR) and grid shut-off thereafter are brilliant
Brake tube (GTO) etc..They are mainly applicable to high voltage power transmission, and 380V the or 220V alternating currents of power network are changed into by manufacture
Motor speed control device of the medium-and-large-sized power supply of various direct current and control motor running etc., these equipment be nearly all with
The related forceful electric power device of power network, with the development of science and technology, current power semiconductor requirement will have the performance of pressure-resistant insulation, but
It is that existing power semiconductor facilitates technical need at these, therefore, a kind of it is proposed that high insulation Breakdown Voltage Power semiconductor dress
Put to solve the above problems.
Utility model content
The purpose of this utility model is that to have pressure-resistant, insulation to solve power semiconductor requirement current in the prior art
Performance, but existing power semiconductor facilitates technical need problem at these, and the high insulation Breakdown Voltage Power of the one kind proposed
Semiconductor device.
To achieve these goals, the utility model employs following technical scheme：
A kind of high insulation Breakdown Voltage Power semiconductor device, including base, the upper surface of the base are provided with the first groove, and
The bottom of first groove is provided with multiple cavitys, and two gears, the cavity are rotatably connected to by first rotating shaft in the cavity
Bottom be connected with the two-sided rack with two gear matches by multiple first springs, and the two-sided rack positioned at two gears it
Between, the side wall of two gears is connected with first connecting rod by the second axis of rotation, and first connecting rod is through the upper of cavity
Side wall is set, and two one end of the first connecting rod away from gear are connected with supporting plate, the branch by the 3rd axis of rotation
The upper end side wall of fagging is provided with power semiconductor, and the bottom of first groove is additionally provided with multiple mounting grooves, and mounting groove is located at
Vertical in the mounting groove to be provided with insulation board between adjacent cavity, the insulation board is hollow structure, the two of the insulation board
Side side wall is equipped with the second groove, and the bottom of the second groove is connected with fixture block, the side of the mounting groove by second spring
Wall is provided with the neck matched with fixture block, and the side wall of the insulation board is additionally provided with by bar, and is set by side wall of the bar through insulation board,
Second connecting rod is provided with by bar one end in the insulation board, the second connecting rod connects away from one end by bar provided with the 3rd
Bar, and third connecting rod runs through the side wall of the second groove and is connected with fixture block.
Preferably, the base uses insulating materials.
Preferably, the opening of the mounting groove is arranged with dust cover.
Preferably, the side wall of second groove is additionally provided with two chutes, and two chutes are located at the both sides of fixture block respectively,
The chute is slidably connected by sliding block and fixture block.
Preferably, it is described by being enclosed with rubber protecting jacket on bar.
The utility model is simple in construction, easy to operate, after power semiconductor is under pressure, is pressed down against supporting plate, branch
Fagging drives first connecting rod to move downward, and first connecting rod makes pinion rotation, wheel and rack engagement, and rack makes the first spring-compressed
Deformation, due to the elastic reaction of spring, the first spring reaction turns round gear in rack, rack and pinion engagement, and gear is anti-
First connecting rod is acted on, first connecting rod reacts on supporting plate, and the reaction force that supporting plate is subject to can enter to the pressure that it is subject to
Row balance, so can play a part of buffering, to improve its resistance to pressure, adjacent two power semiconductors to power semiconductor
Between be provided with insulation board, to be insulated to it, when need dismantle insulation board changed when, by pressing rod, lead to by bar
Crossing second connecting rod drives third connecting rod to be retracted to contract, third connecting rod with fixture block in the second groove, fixture block and exact separation,
Insulation board is removed.
Brief description of the drawings
Fig. 1 be the utility model proposes it is a kind of it is high insulation Breakdown Voltage Power semiconductor device structural representation；
Fig. 2 is the structural representation at A in Fig. 1.
In figure：1 base, 2 first grooves, 3 cavitys, 4 first rotating shafts, 5 gears, 6 first springs, 7 the two-sided racks, 8 second
Rotating shaft, 9 first connecting rods, 10 the 3rd rotating shafts, 11 supporting plates, 12 power semiconductors, 13 mounting grooves, 14 insulation boards, 15 second grooves,
16 second springs, 17 fixture blocks, 18 necks, 19 are by bar, 20 second connecting rods, 21 third connecting rods.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the embodiment of the utility model is carried out
Clearly and completely describing, it is clear that described embodiment is only the utility model part of the embodiment, rather than whole
Embodiment.
Reference picture 1-2, a kind of high insulation Breakdown Voltage Power semiconductor device, including base 1, base 1 use insulating materials, increase
Add insulation effect, the upper surface of base 1 is provided with the first groove 2, and the bottom of the first groove 2 is provided with multiple cavitys 3, in cavity 3
Two gears 5 are rotatably connected to by first rotating shaft 4, the bottom of cavity 3 is connected with and two gears by multiple first springs 6
The two-sided rack 7 of 5 matchings, and the two-sided rack 7, between two gears 5, the side wall of two gears 5 passes through the second rotating shaft 8
First connecting rod 9 is rotatably connected to, and first connecting rod 9 is set through the upper end side wall of cavity 3, two first connecting rods 9 are away from gear 5
One end supporting plate 11 is rotatably connected to by the 3rd rotating shaft 10, the upper end side wall of supporting plate 11 is provided with power semiconductor 12,
The bottom of one groove 2 is additionally provided with multiple mounting grooves 13, and the opening of mounting groove 13 is arranged with dust cover, prevents dust from dropping into peace
In tankage 13, made troubles to installation, and mounting groove 13 is between adjacent cavity 3, it is vertical in mounting groove 13 to be provided with insulation
Plate 14, insulation board 14 are hollow structure, and the both sides side wall of insulation board 14 is equipped with the second groove 15, and the side wall of the second groove 15 is also
Provided with two chutes, and two chutes are located at the both sides of fixture block 17 respectively, and chute is slidably connected by sliding block and fixture block 17, prevented
Fixture block 17 skids off the second groove 15, causes to install unstable, and the bottom of the second groove 15 is connected with by second spring 16
Fixture block 17, the side wall of mounting groove 13 are provided with the neck 18 matched with fixture block 17, and the side wall of insulation board 14 is additionally provided with by bar 19, by bar
Rubber protecting jacket is enclosed with 19, prevents hand from abrading, and is set by side wall of the bar 19 through insulation board 14, in insulation board 14
Be provided with second connecting rod 20 by the one end of bar 19, second connecting rod 20 by one end of bar 19 away from being provided with third connecting rod 21, and the 3rd company
Bar 21 runs through the side wall of the second groove 15 and is connected with fixture block 17.
The utility model is simple in construction, easy to operate, after power semiconductor 12 is under pressure, is pressed down against supporting plate
11, supporting plate 11 drives first connecting rod 9 to move downward, and first connecting rod 9 rotates gear 5, and gear 5 engages with the two-sided rack 7, double
Face rack 7 makes the compression of the first spring 6, and due to the elastic reaction of spring, the first spring 6 reacts on the two-sided rack 7, two-sided
Rack 7 engages with gear 5 turns round gear 5, and gear 5 reacts on first connecting rod 9, and first connecting rod 9 reacts on supporting plate 11,
The reaction force that supporting plate 11 is subject to can be balanced to the pressure that it is subject to, and so can play buffering to power semiconductor 12
Effect, to improve its resistance to pressure, insulation board 14 is provided between adjacent two power semiconductors 12, to be insulated to it,
When needing dismounting insulation board 14 to be changed, by pressing rod 19, pass through second connecting rod 20 by bar 19 and drive third connecting rod
21 are retracted in the second groove 15 to contract, third connecting rod 21 with fixture block 17, and fixture block 17 separates with neck 18, the quilt of insulation board 14
Disassemble.
It is described above, the only preferable embodiment of the utility model, but the scope of protection of the utility model is not
This is confined to, any one skilled in the art is in the technical scope that the utility model discloses, according to this practicality
New technical scheme and its utility model design are subject to equivalent substitution or change, should all cover in protection model of the present utility model
Within enclosing.
Claims (5)
1. a kind of high insulation Breakdown Voltage Power semiconductor device, including base (1), it is characterised in that the upper surface of the base (1)
Provided with the first groove (2), and the bottom of the first groove (2) is provided with multiple cavitys (3), passes through first rotating shaft in the cavity (3)
(4) two gears (5) are rotatably connected to, the bottom of the cavity (3) is connected with and two gears by multiple first springs (6)
(5) the two-sided rack (7) of matching, and the two-sided rack (7), between two gears (5), the side wall of two gears (5) is equal
First connecting rod (9) is rotatably connected to by the second rotating shaft (8), and first connecting rod (9) is set through the upper end side wall of cavity (3),
The one end of two first connecting rods (9) away from gear (5) is rotatably connected to supporting plate (11) by the 3rd rotating shaft (10), described
The upper end side wall of supporting plate (11) is provided with power semiconductor (12), and the bottom of first groove (2) is additionally provided with multiple mounting grooves
(13), and mounting groove (13) is between adjacent cavity (3), and insulation board (14), institute are provided with vertically in the mounting groove (13)
It is hollow structure to state insulation board (14), and the both sides side wall of the insulation board (14) is equipped with the second groove (15), and the second groove
(15) bottom is connected with fixture block (17) by second spring (16), and the side wall of the mounting groove (13) is provided with and fixture block (17)
The neck (18) of matching, the side wall of the insulation board (14) are additionally provided with by bar (19), and by bar (19) through insulation board (14)
Side wall is set, and second connecting rod (20), the second connecting rod (20) are provided with by bar (19) one end in the insulation board (14)
Away from being provided with third connecting rod (21) by one end of bar (19), and third connecting rod (21) run through the second groove (15) side wall and with card
Block (17) connects.
A kind of 2. high insulation Breakdown Voltage Power semiconductor device according to claim 1, it is characterised in that the base (1)
Using insulating materials.
A kind of 3. high insulation Breakdown Voltage Power semiconductor device according to claim 1, it is characterised in that the mounting groove
(13) opening is arranged with dust cover.
A kind of 4. high insulation Breakdown Voltage Power semiconductor device according to claim 1, it is characterised in that second groove
(15) side wall is additionally provided with two chutes, and two chutes are located at the both sides of fixture block (17) respectively, the chute by sliding block with
Fixture block (17) is slidably connected.
5. a kind of high insulation Breakdown Voltage Power semiconductor device according to claim 1, it is characterised in that described to press bar (19)
On be enclosed with rubber protecting jacket.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721161286.7U CN207183265U (en) | 2017-09-12 | 2017-09-12 | A kind of high insulation Breakdown Voltage Power semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721161286.7U CN207183265U (en) | 2017-09-12 | 2017-09-12 | A kind of high insulation Breakdown Voltage Power semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207183265U true CN207183265U (en) | 2018-04-03 |
Family
ID=61746093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721161286.7U Expired - Fee Related CN207183265U (en) | 2017-09-12 | 2017-09-12 | A kind of high insulation Breakdown Voltage Power semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207183265U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111473436A (en) * | 2020-04-23 | 2020-07-31 | 河南江扬机电设备安装有限公司 | Fresh air purification central air conditioning unit with double filtration |
| CN112270804A (en) * | 2020-10-29 | 2021-01-26 | 刘亮亮 | Point type fire early warning device utilizing bimetallic strip principle |
-
2017
- 2017-09-12 CN CN201721161286.7U patent/CN207183265U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111473436A (en) * | 2020-04-23 | 2020-07-31 | 河南江扬机电设备安装有限公司 | Fresh air purification central air conditioning unit with double filtration |
| CN112270804A (en) * | 2020-10-29 | 2021-01-26 | 刘亮亮 | Point type fire early warning device utilizing bimetallic strip principle |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180403 Termination date: 20190912 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |