CN207183207U - For handling the plasma reaction device of workpiece - Google Patents
For handling the plasma reaction device of workpiece Download PDFInfo
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- CN207183207U CN207183207U CN201720632439.5U CN201720632439U CN207183207U CN 207183207 U CN207183207 U CN 207183207U CN 201720632439 U CN201720632439 U CN 201720632439U CN 207183207 U CN207183207 U CN 207183207U
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Abstract
The utility model provides a kind of plasma reaction device for being used to handle workpiece, it includes electron beam and produces chamber, filter and process cavity, wherein, electron beam produces the outside that chamber is located at process cavity, and it is connected by filter with process cavity, and electron beam, which produces chamber, includes inductively-coupled plasma sources, the inductively-coupled plasma sources are used to produce the first plasma；Filter is used to make the first plasma when entering process cavity by filter, forms electron beam, and the electron beam is used to encourage the process gas in process cavity to produce the second plasma, and second plasma is used to handle workpiece.The plasma reaction device provided by the utility model for being used to handle workpiece, it can reduce electron temperature, so as to solve the problems, such as that the wafer surface caused by electron temperature is too high is damaged.
Description
Technical field
Microelectronics technology is the utility model is related to, in particular it relates to which a kind of plasma for handling workpiece is anti-
Answer device.
Background technology
With the development of semiconductor technology, the characteristic size of microelectronic component constantly reduces, and this causes people's article on plasma
The index request more and more highers such as body etch rate uniformity, critical size control.It is additionally, since the characteristic size of microelectronic component
Reduction, microelectronic component to caused by plasma wafer surface damage it is also more sensitive.
Generation based on plasma is to be used as the medium of energy transmission by electronics, therefore fundamentally, because wait from
Wafer surface damage caused by daughter generally can be by reducing electron temperature and improving the uniformity of electron density distribution come real
It is existing.
Plasma source is the magnetic excitation formed using induction coil used by existing plasma processing device
Process gas in process cavity forms plasma.Specifically, by using radio-frequency power supply to induction coil load pulses radio frequency
Power, to produce above-mentioned magnetic field.The frequency of the radio-frequency power supply is generally 13.56MHz.
In order to reduce electron temperature, avoid producing wafer surface damage, can be come by adjusting pulse frequency and dutycycle
The average electron temperature in the unit interval is reduced, still, when pulse power is opened, due to enter promoting the circulation of qi during plasma starter
Body breakdown process, now electron temperature is higher, it is easy to which moment causes to damage to wafer surface.
Utility model content
The utility model is intended at least solve one of technical problem present in prior art, it is proposed that one kind is used to handle
The plasma reaction device of workpiece, it can reduce electron temperature, brilliant caused by electron temperature is too high so as to solve
The problem of piece surface damage.
To realize that the purpose of this utility model provides a kind of plasma reaction device for being used to handle workpiece, including electricity
Beamlet produces chamber, filter and process cavity, wherein,
The electron beam produces chamber and is located at the outside of the process cavity, and passes through the filter and the process cavity phase
Connection, and electron beam generation chamber includes inductively-coupled plasma sources, and the inductively-coupled plasma sources are used to produce
Raw first plasma；
The filter is used to make first plasma when entering the process cavity by the filter,
Form electron beam；Process gas the second plasma of generation that the electron beam is used to encourage in the process cavity, described second
Plasma is used to handle workpiece.
Preferably, the inductively-coupled plasma sources include induction coil, the first adaptation and the first radio-frequency power supply, institute
Stating electron beam generation chamber also includes medium cylinder and the first inlet duct, wherein,
The medium cylinder is arranged on the outside of the process cavity, and with the opening being connected with the process cavity；
First inlet duct is used to convey the not first gas with process gas reaction into the medium cylinder；
The induction coil is looped around around the barrel of the medium cylinder, and the axis horizontal of the induction coil is set；
First radio-frequency power supply is electrically connected by first adaptation with the induction coil, for encouraging described
One gas produces first plasma.
Preferably, the first gas includes inert gas or nitrogen.
Preferably, the filter includes battery lead plate and the first dc source, wherein,
The battery lead plate is arranged on the electron beam and produces chamber and the connectivity part of the process cavity, and in the battery lead plate
On be provided with multiple through holes, the multiple through hole is uniformly distributed relative to the radial section of the connectivity part, and each through hole
Diameter is less than 2 times of the sheaths thickness of first plasma；First dc source electrically connects with the battery lead plate, uses
In to the battery lead plate load direct current positive bias
Preferably, the span of the direct current positive bias is in 500~3000V.
Preferably, material includes molybdenum or tungsten used by the battery lead plate.
Preferably, in addition to electron collection device, the electron collection device are arranged on the chamber wall of the process cavity,
And the offside of chamber is produced positioned at the electron beam, for collecting the electricity moved in the electron beam at the electron collection device
Son.
The preferable electron collection device includes metalwork, resistive element and medium separator, wherein,
The metalwork is arranged in the chamber wall of the process cavity, and through the chamber wall thickness, and by positioned at
Resistive element electrical ground outside the process cavity；
The medium separator is arranged between the metalwork and the chamber wall of the process cavity, to the two
Electric insulation.
Preferably, material includes molybdenum or tungsten used by the metalwork.
Preferably, material includes ceramics or quartz used by the medium separator.
Preferably, the span of the resistance value of the resistive element is in 100~1000 Ω.
Preferably, in addition to restraint device, the restraint device are used for the direction of motion for constraining the electron beam, are allowed to edge
Horizontal motion.
Preferably, the restraint device includes the first magnet coil, the second magnet coil and the second dc source, wherein,
First magnet coil is located at the outside of the process cavity, and is looped around the electron beam and produces chamber and the work
The periphery of the connectivity part of skill chamber, second magnet coil are located at the outside of the process cavity, and are looped around the electronics and collect
The periphery of device, first magnet coil and second magnet coil are used to produce the fortune that can constrain the electron beam
The magnetic field in dynamic direction, is allowed to move in the horizontal direction；
Second dc source electrically connects with first magnet coil and second magnet coil respectively, to divide
Direct current is not passed through to first magnet coil and second magnet coil.
Preferably, the span of the intensity in the magnetic field is in 0~1000G.
Preferably, on the chamber wall of the process cavity, and chamber and the company of the process cavity are produced positioned at the electron beam
Logical place's covering matcoveredn, to protect the chamber wall of the process cavity not corroded by the electron beam.
Preferably, material includes molybdenum or tungsten used by the protective layer.
The utility model has the advantages that：
The plasma reaction device provided by the utility model for being used to handle workpiece, it is provided with the outside of process cavity
Electron beam produces chamber, and it is connected by filter with process cavity.Also, electron beam produce chamber be using inductive etc. from
Daughter source produces the first plasma, because inductively-coupled plasma sources are without using metal electrode electric discharge, therefore can keep away
Exempt to produce metallic pollution.Filter is used to make the first plasma form electricity when entering process cavity by the filter
Beamlet.The electron beam is used to encourage the process gas in process cavity to produce the second plasma, for handling workpiece.Due to electronics
Beam can be cooled down after process cavity is entered by the process gas in process cavity, and this to be produced by the Electron Excitation in electron beam
The second plasma in electron temperature it is relatively low, so as to avoid caused by electron temperature is too high wafer surface from damaging.
Brief description of the drawings
Fig. 1 is the partial cutaway for being used to handle the plasma reaction device of workpiece that the utility model first embodiment provides
View；
Fig. 2 is the sectional view that the electron beam that the utility model first embodiment uses produces chamber；
Fig. 3 A are the sectional view for the battery lead plate that the utility model first embodiment uses；
Fig. 3 B are the structure chart for the battery lead plate that the utility model first embodiment uses；And
Fig. 4 is the section view for being used to handle the plasma reaction device of workpiece that the utility model second embodiment provides
Figure.
Embodiment
To make those skilled in the art more fully understand the technical solution of the utility model, come below in conjunction with the accompanying drawings to this
The plasma reaction device for being used to handle workpiece that utility model provides is described in detail.
Referring to Fig. 1, the plasma reaction device that the utility model first embodiment provides, all for being carried out to workpiece
The PROCESS FOR TREATMENT such as etch, deposited.The plasma reaction device includes electron beam and produces chamber 100, process cavity 200 and filtering
Device 300, wherein, electron beam produces chamber 100 and is located at the outside of process cavity 200, and passes through filter 300 and process cavity 200
It is connected.In the present embodiment, electron beam produces chamber 100 and is located on the outside of the chamber sidewall 201 (left side side wall) of process cavity 200,
And the passage 202 of the thickness of chamber sidewall 201 is provided through in the chamber sidewall 201, the passage 202 for example can be straight
Through hole.Electron beam produces chamber 100 by being connected with the passage 202 with the inside of process cavity 200.
In actual applications, the chamber sidewall 201 of process cavity 200 can be cylindrical ring body or square ring body, at this
In the case of kind, the outer surface of chamber sidewall 201 is probably arc surface, or is also likely to be plane, for the side of being of chamber sidewall 201
The situation of shape ring body, electron beam produce chamber 100 and can be directly docked in chamber sidewall 201, and are round for chamber sidewall 201
The situation of cylindrical ring body, electron beam generation chamber 100 can be docking together with chamber sidewall 201 by mounting flange.
Electron beam, which produces chamber 100, includes inductively-coupled plasma sources (ICP, Inductive Coupled Plasma),
The inductively-coupled plasma sources are to produce electromagnetic field of high frequency by induction coil by radio-frequency current, to excite process gas to produce
First plasma.This plasma producing method using the plasma of DC electrode or heated filament (such as tungsten filament) with being produced
Mode is compared, and is discharged without using metal electrode, so as to avoid producing metallic pollution.
Specifically, above-mentioned inductively-coupled plasma sources include medium cylinder 101, induction coil 102, the first inlet duct
105th, the first adaptation 103 and the first radio-frequency power supply 104, wherein, medium cylinder 101 is using the insulating materials system such as quartz
Make, it is arranged on the outside of the chamber sidewall 201 of process cavity 200, and has and be connected with the passage 202 in the chamber sidewall 201
Logical opening, to make the space that medium cylinder 101 is limited and the inside of process cavity 200 be connected.Induction coil 102 is looped around
Around the barrel of medium cylinder 101, and the axis horizontal of the induction coil 102 is set, i.e. the passage with above-mentioned chamber sidewall 201
202 horizontal axis is parallel to each other or overlapped.As shown in Fig. 2 on the radial section of medium cylinder 101, medium cylinder 101
The orthographic projection of barrel be shaped as rectangle, induction coil 102 is wrapped in around the barrel of the medium cylinder 101, to the induction coil
102 senses of current being passed through are as denoted by the arrows in fig. 2.
First radio-frequency power supply 104 is electrically connected by the first adaptation 103 with induction coil 102.First inlet duct 105 with
The space that medium cylinder 101 is limited is connected, for conveyed in the space that is limited to medium cylinder 101 not with process cavity 200
Process gas reaction first gas, the first gas is, for example, the inert gas of nitrogen or helium or argon gas etc..
When carrying out technique, the first inlet duct 105 is opened, it is above-mentioned to be conveyed in the space that is limited to medium cylinder 101
First gas, the first radio-frequency power supply 104 is then turned on, to load radio frequency work(to induction coil 102 by the first adaptation 103
Rate, caused by the induction coil 102 in the RF energy space that it is limited by the feed-in of medium cylinder 101, and excite the first gas
Body forms the first plasma.
Filter 300 is used to make above-mentioned first plasma when entering process cavity 200 by filter 300, shape
Into electron beam S, electron beam S is used to encourage the process gas in process cavity 200 to produce the second plasma, second plasma
Body is used to handle workpiece, such as etches workpiece surface.In the present embodiment, it is straight to include battery lead plate 301 and first for filter 300
Power supply 302 is flowed, wherein, battery lead plate 301 is arranged on electron beam and produces chamber 100 and the connectivity part of process cavity 200, i.e. electron beam produces
Between the opening of chamber 100 and the passage 202 of chamber sidewall 201.As shown in Figure 3 B, battery lead plate 301 is cut in the radial direction of medium cylinder 101
Orthographic projection shape on face can be the rectangle corresponding with the orthographic projection shape of above-mentioned medium cylinder 101, and battery lead plate 301
The above-mentioned opening of plate body closed dielectric cylinder 201.
Preferably, material is the higher metal material of fusing point of molybdenum or tungsten etc. used by battery lead plate 301, the gold
Category material can overcome because the energy density of electron beam is higher and the problem of corroded by electron beam, so as to avoid producing metal
Pollution.
First dc source 302 electrically connects with above-mentioned battery lead plate 301, for loading direct current positive bias to battery lead plate 301.
In plasma, the quality of electronics is small, speed is high, and the quality of ion is big, and speed is low.Based on this, the direct current positive bias is main
The direction of motion of ion is influenceed, is allowed to deflect, and can not be by through hole 302, but the direct current positive bias is to the motion side of electronics
It is smaller to influenceing, so as to which electronics can pass through through hole 302, form electron beam S.Preferably, the value model of direct current positive bias
500~3000V is trapped among, to ensure that the movement velocity of electronics meets to require.
In addition, the area of radial section and the radial section of each through hole 302 by setting different medium cylinders 101
Area, can obtain in different process cavities 200 caused by the first plasma Density Distribution, to improve the first plasma
The density distribution uniformity of body.
Preferably, covered with protective layer (not shown) on the inwall of the passage 202 of chamber sidewall 201, to protect
The chamber sidewall 201 of shield process cavity 200 is not corroded by electron beam S.The protective layer can use the fusing point of molybdenum or tungsten etc.
Higher metal material, the metal material can overcome because the energy density of electron beam is higher and the problem of corrosion by electron beam,
So as to avoid producing metallic pollution.In actual applications, electron beam, which produces chamber 100 and process cavity 200, can also use it
He is connected at any-mode, and is not limited to set passage 202 in the chamber sidewall 201 of process cavity 200, for different
Mode of communicating, as long as above-mentioned protective layer can be covered in produces chamber 100 and the technique of the connectivity part of process cavity 200 positioned at electron beam
On the chamber wall of chamber 200, to reach the purpose for protecting the chamber wall not corroded by electron beam S.
In summary, above-mentioned electron beam S can occur after process cavity 200 is entered with the process gas in process cavity 200
Collision, process gas ionization is produced into the second plasma.The process cavity 200 produces second without using magnetic excitation mechanism
Plasma, and electron beam S enter process cavity 200 after, can by process cavity 200 process gas cool down, this cause by
Electron temperature in second plasma caused by Electron Excitation in electron beam S is relatively low, so as to avoid because of electron temperature
Wafer surface damage caused by too high.
It should be noted that in the present embodiment, electron beam produces chamber 100 and is located at outside the chamber sidewall 201 of process cavity 200
Side, but the utility model is not limited thereto, in actual applications, electron beam produces chamber 100 can also be according to specific needs
Other optional positions outside process cavity 200.
Referring to Fig. 4, the plasma reaction device that the utility model second embodiment provides is implemented above-mentioned first
The improvement carried out on the basis of example.Specifically, the plasma reaction device also includes electron collection device, and the electronics collects dress
Put in the chamber sidewall 201 for being arranged on process cavity 200, and the offside of chamber 100 is produced positioned at above-mentioned electron beam, to collect electronics
The electronics of the electron collection device is moved in beam S.
Specifically, electron collection device includes metalwork 401, resistive element 402 and medium separator 403, wherein, metal
Part 401 is arranged in the chamber sidewall 201 of process cavity 200, and the offside of chamber 100 is produced positioned at above-mentioned electron beam, and the metal
Part 401 runs through the thickness of the chamber sidewall 201, and by the electrical ground of resistive element 402 outside process cavity 200, so that
Grounding path is provided to move to the electronics of metalwork 401.Preferably, used by metalwork 401 material can include it is all
The higher metal material of the fusing point of such as molybdenum or tungsten, the metal material can overcome because the energy density of electron beam is higher and by
The problem of electron beam corrodes, so as to avoid producing metallic pollution.
Resistive element 402 is used to play a part of current-limiting protection.Preferably, the value of the resistance value of the resistive element 402
Scope is in 100~1000 Ω.Medium separator 403 is arranged between metalwork 401 and the chamber sidewall 201 of process cavity 200, is used
With to the two electric insulation.Material includes the insulating materials of ceramics or quartz etc. used by the medium separator 403.
It should be noted that above-mentioned metalwork 401 relative to the passage 202 of the process cavity 200 positioned at its offside height,
Above-mentioned metalwork 401 end surface shape relative with the passage 202 and size can be according to electron beam the S directions of motion and electron beam
The parameters such as S sectional dimension are set, to guarantee to receive electron beam.For example, metalwork 401 is relative with passage 202
End surface shape and size can be corresponding with the radial cross-sectional shape and size of the passage 202.
It should also be noted that, electron beam generation chamber 100 can also be located at its outside process cavity 200 according to specific needs
His optional position, and the electron beam that electron collection device is located at optional position produces the offside of chamber 100.
In the present embodiment, plasma reaction device also includes restraint device, and the restraint device is used to constrain electron beam S
The direction of motion, be allowed to move in the horizontal direction, i.e. electron beam S moves along parallel to the direction of workpiece surface.Specifically, about
Bundle device includes the first magnet coil 501, the second magnet coil 502 and the second dc source (not shown), wherein, first
Magnet coil 501 is located at the outside of process cavity 200, and is looped around the outer of the connectivity part of electron beam generation chamber 100 and process cavity 200
Enclose, i.e. close to the opening position of passage 202.Second magnet coil 502 is located at the outside of process cavity 200, and is looped around above-mentioned electronics
The periphery of collection device.
The axis of the above-mentioned magnet coil 502 of first magnet coil 501 and second be arranged in parallel, i.e. the axle with passage 202
Line is parallel to each other.The mounting means of the above-mentioned magnet coil 502 of first magnet coil 501 and second can be：In process cavity 200
Two ring-shaped steps are respectively formed with chamber sidewall 201, the above-mentioned magnet coil 502 of first magnet coil 501 and second is distinguished
It is wrapped on the two ring-shaped steps.
Second dc source electrically connects with the above-mentioned magnet coil 502 of first magnet coil 501 and second, to respectively to
One magnet coil 501 and the second magnet coil 502 are passed through direct current, make the first magnet coil 501 and the second magnet coil 502 equal
The magnetic field for the direction of motion that can constrain electron beam S is produced, the magnetic field can constrain in electron beam S the space scale specified
It is interior, realize that electron beam S is moved in the horizontal direction.Preferably, the span of the intensity in above-mentioned magnetic field is in 0~1000G.
In actual applications, the above-mentioned magnet coil 502 of first magnet coil 501 and second can share second direct current
Power supply, or the two each can also electrically connect with second dc source.
It should be noted that in actual applications, above-mentioned magnet coil can also be replaced using permanent magnet, the permanent magnet is same
Sample can produce the magnetic field of the direction of motion of constraint electron beam, be allowed to move in the horizontal direction.
In the present embodiment, the pedestal 203 for carrying workpiece is provided with process cavity 200, the pedestal 203 is preferably
Electrostatic chuck.In addition, plasma reaction device also includes the second radio-frequency power supply 213, the second adaptation 212 and the second air inlet dress
Put, wherein, the second radio-frequency power supply 213 is electrically connected by the second adaptation 212 with pedestal 203, to load radio frequency to pedestal 203
Back bias voltage, moved with the second plasma for attracting to be formed in process cavity 200 towards the workpiece surface being placed on pedestal 203.
Second inlet duct is used to be passed through process gas into process cavity 200.In the present embodiment, second inlet duct
Including uniform flow chamber 206, inlet channel 205 and technique source of the gas 204, wherein, uniform flow chamber 206 is arranged on the top of process cavity 200, and
Even flow plate 2062 including cavity 2061 and positioned at the bottom of cavity 2061, cavity 2061 and even flow plate 2062 form the even of closing
Fluid space 208；Also, multiple passages 207 are provided with even flow plate 2062, multiple passages 207 respectively with uniform flow space
208 are connected with the inside of process cavity 200, and multiple passages 207 are distributed relative to the place uniform plane of even flow plate 2062.
Inlet channel 205 is connected with uniform flow chamber 206 and technique source of the gas 204 respectively；Technique source of the gas 204 is by inlet channel 205 to above-mentioned
Uniform flow space 208 provides process gas.Process gas into uniform flow space 208 expands towards the both sides of the edge in uniform flow space 208
Dissipate, and the inside of process cavity 200 is flowed into by each passage 207, so as to serve the effect of uniform flow, and then be advantageous to improve
The distributing homogeneity of process gas.
In the present embodiment, the second radio-frequency power supply 213 has by way of the second adaptation 212 electrically connects with pedestal 203
Body is：The bottom of pedestal 203 is provided with medium separator 210, to support pedestal 203, and by pedestal 203 and process cavity
200 chamber bottom 209 is electrically insulated；Also, the first through hole vertically run through is provided with medium separator 210；
It is corresponding, the second through hole of its thickness is provided through in the chamber bottom 209 of process cavity 200；Plasma adds
Construction equipment also includes electrode 211, and the lower end of the electrode 211 electrically connects with the second adaptation 212, the upper end of electrode 211 vertically to
On sequentially pass through above-mentioned second through hole and first through hole, and electrically connected with pedestal 203.In actual applications, it is logical above-mentioned second
Kong Zhong, and insulating element is provided between electrode 211 and above-mentioned chamber bottom 209, to seal second through hole, and make
Electrode 211 is electrically insulated with chamber bottom 209.
Preferably, plasma reaction device also includes protective cover 107, and the protective cover 107 is located at above-mentioned plasma
The outside in source, to avoid radio-frequency leakage.
In actual applications, electron beam produces chamber 100 and the connectivity part of process cavity 200, i.e. the chamber side of process cavity 200
Vertical range between the passage 202 of wall 201 and the upper surface of pedestal 203 is typically in 10~40mm, to ensure in process cavity 200
Plasma generating area meet require.
In summary, the plasma reaction device provided by the utility model for being used to handle workpiece, it is in process cavity
Outside is provided with electron beam and produces chamber, and it is connected by filter with process cavity.Also, it is to utilize electricity that electron beam, which produces chamber,
Feel coupled plasma source produce the first plasma, due to inductively-coupled plasma sources without using metal electrode discharge,
Therefore can avoid producing metallic pollution.Filter is used to make the first plasma enter process cavity by the filter
When, form electron beam.The electron beam is used to encourage the process gas in process cavity to produce the second plasma, for handling work
Part.Because electron beam is after process cavity is entered, can be cooled down by the process gas in process cavity, this causes by the electricity in electron beam
Electron temperature in second plasma caused by son excitation is relatively low, so as to avoid the chip caused by electron temperature is too high
Surface damage.
It is understood that embodiment of above is merely to illustrate that principle of the present utility model and used exemplary
Embodiment, but the utility model is not limited thereto.For those skilled in the art, this is not being departed from
In the case of the spirit and essence of utility model, various changes and modifications can be made therein, and these variations and modifications are also considered as this reality
With new protection domain.
Claims (16)
1. a kind of plasma reaction device for being used to handle workpiece, it is characterised in that produce chamber, filter including electron beam
And process cavity, wherein,
The electron beam produces chamber and is located at the outside of the process cavity, and is connected by the filter with the process cavity
It is logical, and electron beam generation chamber includes inductively-coupled plasma sources, and the inductively-coupled plasma sources are used to produce
First plasma；
The filter is used to make first plasma be formed when entering the process cavity by the filter
Electron beam；The electron beam is used to encouraging process gas in the process cavity to produce the second plasma, second grade from
Daughter is used to handle workpiece.
2. plasma reaction device according to claim 1, it is characterised in that the inductively-coupled plasma sources bag
Induction coil, the first adaptation and the first radio-frequency power supply are included, the electron beam, which produces chamber, also includes medium cylinder and the first air inlet dress
Put, wherein,
The medium cylinder is arranged on the outside of the process cavity, and with the opening being connected with the process cavity；
First inlet duct is used to convey the not first gas with process gas reaction into the medium cylinder；
The induction coil is looped around around the barrel of the medium cylinder, and the axis horizontal of the induction coil is set；
First radio-frequency power supply is electrically connected by first adaptation with the induction coil, for encouraging first gas
Body produces first plasma.
3. plasma reaction device according to claim 2, it is characterised in that the first gas includes inert gas
Or nitrogen.
4. plasma reaction device according to claim 1, it is characterised in that the filter include battery lead plate and
First dc source, wherein,
The battery lead plate is arranged on the electron beam and produces chamber and the connectivity part of the process cavity, and is set on the battery lead plate
Multiple through holes are equipped with, the multiple through hole is uniformly distributed relative to the radial section of the connectivity part, and the diameter of each through hole
Less than 2 times of the sheaths thickness of first plasma；First dc source electrically connects with the battery lead plate, for
The battery lead plate loads direct current positive bias.
5. plasma reaction device according to claim 4, it is characterised in that the span of the direct current positive bias
In 500~3000V.
6. plasma reaction device according to claim 4, it is characterised in that material bag used by the battery lead plate
Include molybdenum or tungsten.
7. plasma reaction device according to claim 1, it is characterised in that described also including electron collection device
Electron collection device is arranged on the chamber wall of the process cavity, and the offside of chamber is produced positioned at the electron beam, for collecting
The electronics moved in the electron beam at the electron collection device.
8. plasma reaction device according to claim 7, it is characterised in that the electron collection device includes metal
Part, resistive element and medium separator, wherein,
The metalwork is arranged in the chamber wall of the process cavity, and through the thickness of the chamber wall, and by positioned at described
Resistive element electrical ground outside process cavity；
The medium separator is arranged between the metalwork and the chamber wall of the process cavity, to exhausted to the two electricity
Edge.
9. plasma reaction device according to claim 8, it is characterised in that material bag used by the metalwork
Include molybdenum or tungsten.
10. plasma reaction device according to claim 8, it is characterised in that used by the medium separator
Material includes ceramics or quartz.
11. plasma reaction device according to claim 8, it is characterised in that the resistance value of the resistive element
Span is in 100~1000 Ω.
12. plasma reaction device according to claim 1, it is characterised in that also including restraint device, the constraint
Device is used for the direction of motion for constraining the electron beam, is allowed to move in the horizontal direction.
13. plasma reaction device according to claim 12, it is characterised in that the restraint device includes the first electricity
Magnetic coil, the second magnet coil and the second dc source, wherein,
First magnet coil is located at the outside of the process cavity, and is looped around the electron beam and produces chamber and the process cavity
Connectivity part periphery, second magnet coil is located at the outside of the process cavity, and is looped around the electron beam and produces chamber
With the periphery of the connectivity part of the process cavity, first magnet coil and second magnet coil are used to generation can be about
The magnetic field of the direction of motion of Shu Suoshu electron beams, it is allowed to move in the horizontal direction；
Second dc source electrically connects with first magnet coil and second magnet coil respectively, to respectively to
First magnet coil and second magnet coil are passed through direct current.
14. plasma reaction device according to claim 13, it is characterised in that the value model of the intensity in the magnetic field
It is trapped among 0~1000G.
15. plasma reaction device according to claim 1, it is characterised in that on the chamber wall of the process cavity,
And chamber and the connectivity part covering matcoveredn of the process cavity are produced positioned at the electron beam, to protect the chamber of the process cavity
Locular wall is not corroded by the electron beam.
16. plasma reaction device according to claim 15, it is characterised in that material used by the protective layer
Including molybdenum or tungsten.
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| CN108987228A (en) * | 2017-06-02 | 2018-12-11 | 北京北方华创微电子装备有限公司 | For handling the plasma reaction device of workpiece |
| CN109587921A (en) * | 2018-11-16 | 2019-04-05 | 中国科学院合肥物质科学研究院 | A kind of plasma jet generating device coupling high energy electron |
| CN110797245A (en) * | 2019-10-28 | 2020-02-14 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
| CN112738968A (en) * | 2020-12-18 | 2021-04-30 | 北京北方华创微电子装备有限公司 | Plasma generating device and semiconductor processing equipment |
| CN112899662A (en) * | 2019-12-04 | 2021-06-04 | 江苏菲沃泰纳米科技股份有限公司 | DLC production apparatus and production method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108987228A (en) * | 2017-06-02 | 2018-12-11 | 北京北方华创微电子装备有限公司 | For handling the plasma reaction device of workpiece |
| CN108987228B (en) * | 2017-06-02 | 2024-05-17 | 北京北方华创微电子装备有限公司 | Plasma reactor for processing workpieces |
| CN109587921A (en) * | 2018-11-16 | 2019-04-05 | 中国科学院合肥物质科学研究院 | A kind of plasma jet generating device coupling high energy electron |
| CN110797245A (en) * | 2019-10-28 | 2020-02-14 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
| CN112899662A (en) * | 2019-12-04 | 2021-06-04 | 江苏菲沃泰纳米科技股份有限公司 | DLC production apparatus and production method |
| WO2021110111A1 (en) * | 2019-12-04 | 2021-06-10 | 江苏菲沃泰纳米科技有限公司 | Dlc preparation apparatus and preparation method |
| CN112738968A (en) * | 2020-12-18 | 2021-04-30 | 北京北方华创微电子装备有限公司 | Plasma generating device and semiconductor processing equipment |
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