CN207134376U - Epitaxial growth substrate and light emitting diode - Google Patents
Epitaxial growth substrate and light emitting diode Download PDFInfo
- Publication number
- CN207134376U CN207134376U CN201720997124.0U CN201720997124U CN207134376U CN 207134376 U CN207134376 U CN 207134376U CN 201720997124 U CN201720997124 U CN 201720997124U CN 207134376 U CN207134376 U CN 207134376U
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- Prior art keywords
- crackle
- epitaxial growth
- light emitting
- emitting diode
- growth substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 52
- 230000012010 growth Effects 0.000 title claims abstract description 39
- 208000037656 Respiratory Sounds Diseases 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000010329 laser etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 206010011376 Crepitations Diseases 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 210000003746 feather Anatomy 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000002910 structure generation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
The utility model provides a kind of epitaxial growth substrate, including substrate bulk, and the substrate bulk has relative first surface and second surface, and wherein first surface is epitaxial growth surface, it is characterised in that：The fringe region of the first surface has crackle blocking-up structure, and caused crackle is limited into edge region after epitaxial structure layer is grown.The utility model also discloses a kind of light emitting diode formed using aforementioned growth substrate.
Description
Technical field
It the utility model is related to a kind of epitaxial growth substrate and the light emitting diode formed using the epitaxial growth substrate.
Background technology
Ultraviolet LED progresses greatly with technology with product power ascension in recent years, plus advantages such as long lifespan, small volumes, by
Gradually substitute the mercury lamp of lower-wattage.Mercury is prohibited in the world simultaneously《Minamata pact》It will be come into force in the year two thousand twenty, this policy will accelerate purple
The arrival of outer LED scale applications.
Deep ultraviolet LED structure generally grows the AlN after several microns as cushion at present, to reduce dislocation density lifting
The internal quantum efficiency of quantum well active area, but because the lattice constant between AlN and substrate mismatches, easily produced in edges of substrate
Raw substantial amounts of crackle, and epitaxial wafer central area is extended to, cause device property relatively low with yield.Fig. 1 shows that tradition is dark purple
Substrate surface schematic diagram before outer LED growth, sequentially growing AIN cushion on this substrate, is n-type nitridation after cushion
Thing semiconductor layer, quantum trap luminous layer and p-type nitride semiconductor layer.Fig. 2 is the epitaxial wafer schematic surface after growth, can be with
See that many crackles are extended inward to central area from epitaxial wafer edge, cause overall epitaxial wafer yield relatively low.
The content of the invention
In view of the above-mentioned problems, formed the utility model proposes a kind of new epitaxial growth substrate and using the growth substrates
Light emitting diode, it is designing crackle blocking-up structure on substrate, crackle is confined to epitaxial wafer edge toward internal extension,
To lift the crystal mass of central area and yield of devices.
The technical scheme that the utility model solves the above problems is：A kind of epitaxial growth substrate, including substrate bulk, it is described
Substrate bulk has relative a first surface and second surface, and wherein first surface is epitaxial growth surface, the first surface
Fringe region there is crackle blocking-up structure, after epitaxial structure layer is grown by caused crackle limit to edge region.
The crackle blocking-up structure generation type can be laser ablation, mechanical etching or be etched via gold-tinted developer chemical
Technique is reached, and is preferably made with laser etching process.
In certain embodiments, the crackle blocking-up structure is the groove of continuous annular.
In certain embodiments, the crackle blocking-up structure is the groove of form of discontinuity.
Preferably, edges of substrate described in the positional distance of the groove is no more than 7mm.
Preferably, the width of the groove is less than or equal to 1mm.
Preferably, the depth of the groove is more than or equal to 5 microns.
The utility model also provides a kind of light emitting diode, including：Growth substrates and first kind semiconductor layer thereon,
Active layer and Second Type semiconductor layer, the fringe region of the growth substrates upper surface are provided with crackle blocking-up structure, will produced
Crackle limitation edge region.
Preferably, AlN cushions are additionally provided between the growth substrates and first kind semiconductor layer.
In certain embodiments, the crackle blocking-up structure is the groove of continuous annular.
In certain embodiments, the crackle blocking-up structure is the groove of form of discontinuity.
The new further feature of this implementation and advantage will illustrate in the following description, also, partly from specification
In become apparent, or by implement the present invention and understand.The purpose of this utility model and other advantages can be by saying
Specifically noted structure is realized and obtained in bright book, claims and accompanying drawing.
Brief description of the drawings
Fig. 1 is the substrate surface schematic diagram before traditional deep ultraviolet LED growths
Fig. 2 is the epitaxial wafer schematic surface formed using growth substrates shown in Fig. 1.
Fig. 3 is the schematic surface of the growth substrates of the utility model one embodiment.
Fig. 4 is the profile of growth substrates shown in Fig. 3.
Fig. 5 is the epitaxial wafer schematic surface formed using growth substrates shown in Fig. 3.
Fig. 6 is the side sectional view of the light emitting diode formed using growth substrates shown in Fig. 3.
Fig. 7 is the schematic surface of the growth substrates of second embodiment of the utility model.
Label represents as follows in figure：
100：Growth substrates.
Embodiment
For the light emitting diode for making a kind of growth substrates with crackle blocking-up structure of the utility model and growing thereon
Its substantive distinguishing features and its practicality having is more readily understood in structure, below just with reference to accompanying drawing to some tools of the present utility model
Body embodiment is described in further detail.But the description and explanation below in relation to embodiment are not formed to the scope of the present invention
Any restrictions.
Embodiment 1
Fig. 3 is refer to, a kind of epitaxial growth substrate 100 implemented according to the utility model, including substrate bulk 101 and split
Line blocking-up structure 102.The base material that wherein base material of substrate bulk 101 can be is sapphire, gallium nitride, carborundum, silicon, nitridation
Aluminium, zinc oxide etc., preferably sapphire.Crackle blocking-up structure 102 is formed at the fringe region of the growing surface of growth substrates.
In the present embodiment, crackle blocking-up structure 102 is the groove structure of continuous annular.It refer to accompanying drawing 4, the positional distance lining of this groove
Feather edge d is no more than 7mm, and its width L is less than or equal to 1mm, and depth h is more than or equal to 5 microns.Preferably, this groove
Positional distance edges of substrate be 5mm, its width L is less than or equal to 0.5 ~ 1mm, and depth h is more than or equal to 5 ~ 10 microns.
The generation type of crackle blocking-up structure 102 can be laser ablation, mechanically etch or via gold-tinted developer chemical etch process
Reach.By taking Sapphire Substrate as an example, preferably made with laser etching process.
Fig. 5 shows the schematic surface of the epitaxial wafer after complete deep ultraviolet LED is grown on the substrate 100.From signal
It can be seen that in figure, the crackle at script edge is blocked not to be continued, toward internal extension, thereby to lift whole epitaxial wafer in this groove
Yield.
Fig. 6 shows the cross-sectional side view of the light emitting diode formed using above-mentioned growth substrates.The light emitting diode bag
Include：With crackle blocking-up structure substrate 100；Cushion 200 on substrate；N-type layer 300 on cushion, to
The electronics of illuminating is provided；The luminous main region of mqw layer 400 in N-type layer, electronics and hole-recombination；Positioned at mqw layer
On electronic barrier layer 500, to stop electronic carrier overflow；P-type layer 600 on electronic barrier layer, to provide
The hole of illuminating.AlN or AlGaN can be used with example, cushion 200 with ultraviolet LED.
Embodiment 2
Fig. 7 shows second embodiment of the present utility model.Embodiment 1 is different from, in this embodiment, crackle blocks knot
Structure 102 is made up of a series of groove of form of discontinuity.
, it is clear that explanation of the present utility model should not be construed as being limited only within above-described embodiment, but using
The all possible embodiment of the utility model design.
Claims (10)
1. a kind of epitaxial growth substrate, including substrate bulk, the substrate bulk has relative first surface and second surface,
Wherein first surface is epitaxial growth surface, it is characterised in that：The fringe region of the first surface has crackle blocking-up structure,
So that caused crackle is limited into edge region after growth epitaxial structure layer.
2. epitaxial growth substrate according to claim 1, it is characterised in that：The crackle blocking-up structure is continuous annular
Groove structure.
3. epitaxial growth substrate according to claim 1, it is characterised in that：The crackle blocking-up structure is form of discontinuity
Groove structure.
4. the epitaxial growth substrate according to Claims 2 or 3, it is characterised in that：Lining described in the positional distance of the groove
Bottom body edges are no more than 7mm.
5. the epitaxial growth substrate according to Claims 2 or 3, it is characterised in that：The width of the groove is less than or equal to
1mm。
6. the epitaxial growth substrate according to Claims 2 or 3, it is characterised in that：The depth of the groove is more than or equal to 5
Micron.
7. light emitting diode, including：Growth substrates and first kind semiconductor layer, active layer and Second Type semiconductor thereon
Layer, it is characterised in that：The fringe region of the growth substrates upper surface is provided with crackle blocking-up structure, and caused crackle is confined to
Fringe region.
8. light emitting diode according to claim 7, it is characterised in that：The crackle blocking-up structure is the ditch of continuous annular
Slot structure.
9. light emitting diode according to claim 7, it is characterised in that：The crackle blocking-up structure is the ditch of form of discontinuity
Slot structure.
10. light emitting diode according to claim 7, it is characterised in that：Partly led with the first kind in the growth substrates
AlN cushions are additionally provided between body layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720997124.0U CN207134376U (en) | 2017-08-10 | 2017-08-10 | Epitaxial growth substrate and light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720997124.0U CN207134376U (en) | 2017-08-10 | 2017-08-10 | Epitaxial growth substrate and light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207134376U true CN207134376U (en) | 2018-03-23 |
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|---|---|---|---|
| CN201720997124.0U Active CN207134376U (en) | 2017-08-10 | 2017-08-10 | Epitaxial growth substrate and light emitting diode |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019176124A (en) * | 2018-03-26 | 2019-10-10 | 日亜化学工業株式会社 | Method of manufacturing semiconductor device and semiconductor device |
| CN110480192A (en) * | 2019-08-28 | 2019-11-22 | 业成科技（成都）有限公司 | The cutting method of fragile material |
| CN111719136A (en) * | 2019-03-21 | 2020-09-29 | 中微半导体设备(上海)股份有限公司 | Substrate for MOCVD and method for growing buffer layer on substrate |
| CN112382709A (en) * | 2020-12-03 | 2021-02-19 | 至芯半导体(杭州)有限公司 | Manufacturing method of anti-crack AlN epitaxial layer |
| US11101404B2 (en) | 2018-03-26 | 2021-08-24 | Nichia Corporation | Method for manufacturing semiconductor device and semiconductor device |
| CN113652748A (en) * | 2021-08-18 | 2021-11-16 | 山东天岳先进科技股份有限公司 | Seed crystal with annular barrier belt and processing method thereof |
| WO2021237856A1 (en) * | 2020-05-27 | 2021-12-02 | 武汉华星光电半导体显示技术有限公司 | Array substrate, preparation method therefor, and display panel |
| US11695015B2 (en) | 2020-05-27 | 2023-07-04 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Array substrate, method of manufacturing the same, and display panel |
-
2017
- 2017-08-10 CN CN201720997124.0U patent/CN207134376U/en active Active
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2019176124A (en) * | 2018-03-26 | 2019-10-10 | 日亜化学工業株式会社 | Method of manufacturing semiconductor device and semiconductor device |
| CN110364414A (en) * | 2018-03-26 | 2019-10-22 | 日亚化学工业株式会社 | The manufacturing method and semiconductor device of semiconductor device |
| US11101404B2 (en) | 2018-03-26 | 2021-08-24 | Nichia Corporation | Method for manufacturing semiconductor device and semiconductor device |
| CN111719136A (en) * | 2019-03-21 | 2020-09-29 | 中微半导体设备(上海)股份有限公司 | Substrate for MOCVD and method for growing buffer layer on substrate |
| CN110480192A (en) * | 2019-08-28 | 2019-11-22 | 业成科技（成都）有限公司 | The cutting method of fragile material |
| WO2021237856A1 (en) * | 2020-05-27 | 2021-12-02 | 武汉华星光电半导体显示技术有限公司 | Array substrate, preparation method therefor, and display panel |
| US11695015B2 (en) | 2020-05-27 | 2023-07-04 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Array substrate, method of manufacturing the same, and display panel |
| CN112382709A (en) * | 2020-12-03 | 2021-02-19 | 至芯半导体(杭州)有限公司 | Manufacturing method of anti-crack AlN epitaxial layer |
| CN113652748A (en) * | 2021-08-18 | 2021-11-16 | 山东天岳先进科技股份有限公司 | Seed crystal with annular barrier belt and processing method thereof |
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