CN207116469U - A kind of high-power ultraviolet LED Vacuum Package device - Google Patents
A kind of high-power ultraviolet LED Vacuum Package device Download PDFInfo
- Publication number
- CN207116469U CN207116469U CN201721016413.4U CN201721016413U CN207116469U CN 207116469 U CN207116469 U CN 207116469U CN 201721016413 U CN201721016413 U CN 201721016413U CN 207116469 U CN207116469 U CN 207116469U
- Authority
- CN
- China
- Prior art keywords
- ultraviolet led
- substrate
- glass sheet
- cup
- reflecting cup
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 239000011521 glass Substances 0.000 claims description 27
- 229910052782 aluminium Inorganic materials 0.000 claims description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 22
- 238000009461 vacuum packaging Methods 0.000 claims description 16
- 239000005341 toughened glass Substances 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 abstract description 8
- 229910010272 inorganic material Inorganic materials 0.000 abstract description 2
- 239000011147 inorganic material Substances 0.000 abstract description 2
- 238000007711 solidification Methods 0.000 abstract description 2
- 230000008023 solidification Effects 0.000 abstract description 2
- 239000005357 flat glass Substances 0.000 abstract 2
- -1 reflector Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000005457 optimization Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 239000005022 packaging material Substances 0.000 description 3
- 239000011265 semifinished product Substances 0.000 description 3
- 239000000741 silica gel Substances 0.000 description 3
- 229910002027 silica gel Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model discloses a kind of high-power ultraviolet LED Vacuum Package device, including substrate, reflector, sheet glass and at least one ultraviolet LED chip;The bottom of substrate is provided with positive terminal pad, negative terminal pad and radiator, and radiator is located at the centre of positive terminal pad and negative terminal pad, and the upper surface of substrate is provided with crystal bonding area and adhesion zone;Reflector is fixed on the adhesion zone of substrate, and ultraviolet LED chip is fixed on the crystal bonding area of substrate, and the positive pole of ultraviolet LED chip is connected with positive terminal pad, and the negative pole of ultraviolet LED chip is connected with negative terminal pad, and sheet glass is covered on reflector and Nian Jie with reflector.The utility model realizes the high-power encapsulation of ultraviolet LED, is more suitable for using in the case of the high-power UV solidification fields of needs or demand are efficient.The utility model is also encapsulated using full-inorganic material vacuum, is adapted to the encapsulation of 200 420nm all bands LED wafers.
Description
Technical Field
The utility model relates to a LED encapsulates the field, especially a high-power ultraviolet LED vacuum packaging device.
Background
In the prior art, a shallow ultraviolet LED is applied more, usually 3535 ceramic package is adopted, but the package size is smaller, and the high power is difficult to realize; in addition, most of the 1-3W LED device packaging materials adopt molding silica gel no matter light ultraviolet or ultraviolet, and the device is easy to cause yellowing, cracking and even falling of the silica gel after being used for a long time. Silica gel encapsulation is only suitable for shallow ultraviolet low-power products. Therefore, the prior art cannot realize high power and effectively solve the problem of damage of ultraviolet light to materials.
Disclosure of Invention
The utility model aims to solve the technical problem that overcome prior art not enough and provide a high-power ultraviolet LED vacuum packaging device, the utility model discloses realize great powerful encapsulation demand completely.
The utility model discloses a solve above-mentioned technical problem and adopt following technical scheme:
according to the utility model provides a high-power ultraviolet LED vacuum packaging device, which comprises a substrate, a reflecting cup, a glass sheet and at least one ultraviolet LED wafer; the bottom of the substrate is provided with an anode bonding pad, a cathode bonding pad and a radiator, the radiator is positioned between the anode bonding pad and the cathode bonding pad, and the upper surface of the substrate is provided with a die bonding area and an adhesion area; wherein,
the reflecting cup is fixed on the bonding area of the substrate, the ultraviolet LED wafer is fixed on the crystal fixing area of the substrate, the anode of the ultraviolet LED wafer is connected with the anode bonding pad, the cathode of the ultraviolet LED wafer is connected with the cathode bonding pad, and the glass sheet covers the reflecting cup and is bonded with the reflecting cup; the cup mouth of the reflecting cup is designed into a step shape, the height of the step is consistent with the thickness of a glass sheet, and the glass sheet is fixed on the step of the reflecting cup, so that the surface of the glass sheet and the surface of the reflecting cup are on the same plane.
As a further optimization scheme of high-power ultraviolet LED vacuum packaging device, the surface of reflection cup is glossy.
As a further optimization scheme of high-power ultraviolet LED vacuum packaging device, the reflection cup is aluminium system reflection cup.
As a further optimization scheme of the high-power ultraviolet LED vacuum packaging device, the wavelength band of the ultraviolet LED wafer is 200-420 nm.
As a further optimization scheme of high-power ultraviolet LED vacuum packaging device, the glass piece is the toughened glass piece.
As a further optimization scheme of high-power ultraviolet LED vacuum packaging device, the material of base plate is alumina ceramics.
The utility model adopts the above technical scheme to compare with prior art, have following technological effect:
(1) the bottom of a substrate comprises a positive electrode, a negative electrode bonding pad and a radiator, and the front surface of the substrate comprises a die bonding area and a bonding area; the substrate is formed by taking alumina ceramic as a base material and making a circuit on the surface of the alumina ceramic, wherein the circuit takes copper metal as a bottom layer, and nickel and silver or gold are electroplated on the copper layer;
(2) the upper surface of the substrate is provided with a die bonding area and a bonding area, and the bonding area is used for bonding the substrate and the reflecting cup;
(3) an aluminum reflecting cup is adopted to replace the plastic material on the market at present;
(4) the cup mouth of the reflecting cup is designed into a step shape, and the height of the step is consistent with the thickness of the glass sheet;
(5) the toughened glass sheet is adopted for packaging, so that the mechanical impact resistance is strong;
(6) the periphery of the cup mouth of the reflecting cup is wrapped with the glass sheet, so that the product avoids the failure risk of vacuum breaking or glass sheet breakage caused by external force on the side surface;
(7) the wafer can be selected from any wave band of an ultraviolet LED chip (200nm-420 nm);
(8) the inside vacuum state that becomes of device does not receive external environment influence life-span, the utility model discloses use ceramic substrate, aluminium system reflection cup and glass's full inorganic packaging material to overcome regardless of the material destruction that shallow ultraviolet or ultraviolet ray shines for a long time and bring, great size ceramic substrate of collocation again realizes great powerful encapsulation demand completely, has realized the application scenario of great power demand.
Drawings
Fig. 1 shows a front structure of a substrate.
Fig. 2 shows a substrate bottom structure.
Fig. 3 is an aluminum reflector cup structure.
Fig. 4 is a schematic view of an aluminum reflector cup after it is bonded to a substrate.
Fig. 5 shows the finished device after die bonding and wire bonding.
The reference signs are interpreted as: the LED chip comprises a substrate 1, a die bond 2, an ultraviolet LED chip 3, a gold bonding wire 4, an adhesive 5, a toughened glass sheet 6, an aluminum reflector 7, a substrate die bond region 8, a substrate bonding wire region 9, a substrate bonding region 10, an anode bonding pad at the bottom of the substrate 11, a radiator 12 and a cathode bonding pad at the bottom of the substrate 13.
Detailed Description
The technical scheme of the utility model is further explained in detail with the attached drawings as follows:
as shown in fig. 5, the high-power ultraviolet LED vacuum package device of the present invention comprises a substrate 1, an aluminum reflector 7, a tempered glass sheet 6 and at least one ultraviolet LED chip 3; the bottom of the substrate is provided with an anode bonding pad 11, a cathode bonding pad 13 and a radiator 12, the radiator is positioned between the anode bonding pad and the cathode bonding pad, and the upper surface of the substrate is provided with a die bonding area 8 and a bonding area 10; wherein,
the reflection cup is fixed on the bonding area of the substrate, the ultraviolet LED wafer is fixed on the crystal fixing area of the substrate, the anode of the ultraviolet LED wafer is connected with the anode bonding pad, the cathode of the ultraviolet LED wafer is connected with the cathode bonding pad, and the glass sheet covers the reflection cup and is bonded with the reflection cup. The reflection cup is an aluminum reflection cup. The cup mouth of the reflection cup is designed in a step shape, the height of the step is consistent with the thickness of a glass sheet, the glass sheet is fixed on the step of the reflection cup, so that the surface of the glass sheet and the surface of the reflection cup are on the same plane, and the periphery of the cup mouth of the reflection cup is wrapped with the glass sheet, so that the product avoids the failure risk of vacuum breaking or glass sheet damage caused by side external force.
Fig. 1 shows the front structure of the substrate, fig. 2 shows the bottom structure of the substrate, and fig. 3 shows the structure of the aluminum reflector cup. Fig. 4 is a schematic view of an aluminum reflector cup after it is bonded to a substrate.
The utility model discloses use the base plate to overcome regardless of shallow ultraviolet or ultraviolet ray and shine the material destruction that brings for a long time for ceramic substrate, aluminium system reflection cup and glass's full inorganic packaging material, arrange the great size ceramic substrate of collocation again, realize great powerful encapsulation demand completely. The application occasions with larger power requirements are realized.
A manufacturing method of a high-power ultraviolet LED vacuum packaging device comprises the following steps:
step one, printing the adhesive 5 on the substrate bonding area by using a printing process, wherein the printing and coating are uniform.
Step two, fixing the aluminum reflecting cup base on the substrate bonding area, as shown in fig. 4;
thirdly, placing the substrate bonded with the aluminum reflecting cup into an oven to bake and cure the adhesive;
placing the substrate bonded with the aluminum reflecting cup on a die bonder to fix the ultraviolet LED wafer by using high-thermal-conductivity die bonder glue 2;
putting the semi-finished product with the LED wafer fixed into an oven for baking to solidify the crystal fixing glue;
placing the cured semi-finished product on a wire bonding machine for bonding a bonding alloy wire 4, wherein 9 is a substrate bonding area, and connecting the positive electrode and the negative electrode of the ultraviolet LED wafer with positive and negative electrode bonding pads of the substrate respectively;
seventhly, placing the semi-finished product after the wire welding in a vacuum environment, bonding toughened glass on the aluminum reflecting cup, and curing to form a finished product device; fig. 5 shows a finished device after die bonding and wire bonding.
And step eight, classifying the inspected finished device according to voltage, brightness and wavelength.
Bonding and adhering the aluminum reflection cup base subjected to surface treatment with the front surface adhesion area of the ceramic substrate; then carrying out die bonding and routing operation on the die bonding area of the substrate; and finally, bonding the toughened glass sheet on the aluminum reflecting cup in a vacuum environment to form the LED device. The utility model uses 5 × 5mm large-size substrate to package multiple LED chips, which is suitable for 5-10W operation; the ceramic substrate can be used for better heat dissipation. The utility model discloses a high-power encapsulation of ultraviolet LED more is fit for using under the efficient condition of UV solidification field or demand that needs the high power. The utility model discloses also use full inorganic material vacuum packaging, be fit for 200 and increase 420nm full wave band LED wafer encapsulation.
The bonding area in the substrate is used for bonding the substrate and the aluminum reflecting cup base to form a whole.
The adhesive needs to have good sealing performance and resist high temperature of more than 200 ℃.
The glass sheet is toughened to increase the mechanical impact strength.
The aluminum reflection cup is a smooth high reflection cup after surface polishing treatment.
And fixing the ultraviolet LED wafer by using high-thermal-conductivity solid crystal glue, and welding positive and negative electrode bonding pads by using a wire bonding machine.
And covering the toughened glass sheet on the aluminum reflecting cup in a vacuum state, and bonding to form a vacuum packaging closed device.
The reflecting cup is made of aluminum materials and is subjected to surface treatment to have the characteristics of high brightness and high reflection.
The glass sheet is made of glass material, and is toughened, so that the glass sheet has strong mechanical impact resistance and is not easy to break.
In addition to the above embodiments, the present invention can also have other embodiments, and all technical solutions formed by equivalent replacement or equivalent transformation fall within the protection scope of the present invention.
Claims (6)
1. A high-power ultraviolet LED vacuum packaging device is characterized by comprising a substrate, a reflecting cup, a glass sheet and at least one ultraviolet LED wafer; the bottom of the substrate is provided with an anode bonding pad, a cathode bonding pad and a radiator, the radiator is positioned between the anode bonding pad and the cathode bonding pad, and the upper surface of the substrate is provided with a die bonding area and an adhesion area; wherein,
the reflecting cup is fixed on the bonding area of the substrate, the ultraviolet LED wafer is fixed on the crystal fixing area of the substrate, the anode of the ultraviolet LED wafer is connected with the anode bonding pad, the cathode of the ultraviolet LED wafer is connected with the cathode bonding pad, and the glass sheet covers the reflecting cup and is bonded with the reflecting cup; the cup mouth of the reflecting cup is designed into a step shape, the height of the step is consistent with the thickness of a glass sheet, and the glass sheet is fixed on the step of the reflecting cup, so that the surface of the glass sheet and the surface of the reflecting cup are on the same plane.
2. The vacuum packaging device for high power ultraviolet LED as claimed in claim 1, wherein the surface of the reflecting cup is smooth.
3. The high power ultraviolet LED vacuum package device as claimed in claim 1, wherein the reflective cup is an aluminum reflective cup.
4. The vacuum packaging device for high power UV LED as recited in claim 1, wherein the wavelength band of the UV LED chip is 200-420 nm.
5. The high power ultraviolet LED vacuum package device according to claim 1, wherein the glass sheet is a tempered glass sheet.
6. The vacuum packaging device for high power ultraviolet LED as claimed in claim 1, wherein the substrate is made of alumina ceramic.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201721016413.4U CN207116469U (en) | 2017-08-15 | 2017-08-15 | A kind of high-power ultraviolet LED Vacuum Package device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201721016413.4U CN207116469U (en) | 2017-08-15 | 2017-08-15 | A kind of high-power ultraviolet LED Vacuum Package device |
Publications (1)
Publication Number | Publication Date |
---|---|
CN207116469U true CN207116469U (en) | 2018-03-16 |
Family
ID=61571483
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201721016413.4U Active CN207116469U (en) | 2017-08-15 | 2017-08-15 | A kind of high-power ultraviolet LED Vacuum Package device |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN207116469U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107527978A (en) * | 2017-08-15 | 2017-12-29 | 江苏稳润光电科技有限公司 | A kind of high-power ultraviolet LED Vacuum Package device and its manufacture method |
-
2017
- 2017-08-15 CN CN201721016413.4U patent/CN207116469U/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107527978A (en) * | 2017-08-15 | 2017-12-29 | 江苏稳润光电科技有限公司 | A kind of high-power ultraviolet LED Vacuum Package device and its manufacture method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104716247B (en) | Light emitting device | |
CN107527978A (en) | A kind of high-power ultraviolet LED Vacuum Package device and its manufacture method | |
CN204130585U (en) | A kind of uv-LED device | |
CN213242589U (en) | Ultraviolet LED device with adjustable light-emitting angle | |
TWI476877B (en) | Structure and method for air cavity packaging | |
CN102222625A (en) | Manufacturing method of light-emitting diode (LED) packaging structure and base thereof | |
WO2013075393A1 (en) | Led device with a light extracting rough structure and manufacturing methods thereof | |
CN103943763B (en) | A kind of encapsulating structure and method of flip LED chips | |
CN109888081B (en) | Full-inorganic ultraviolet LED wafer level packaging method | |
CN106328639A (en) | LED encapsulating structure and preparing method thereof | |
CN102231372B (en) | Multi-turn arranged carrier-free IC (Integrated Circuit) chip packaging component and manufacturing method thereof | |
CN207116469U (en) | A kind of high-power ultraviolet LED Vacuum Package device | |
CN205692861U (en) | A kind of UV LED encapsulating structure | |
CN208093589U (en) | A kind of ceramic circuit harden structure with box dam | |
CN102222658B (en) | Multi-circle arranged IC (integrated circuit) chip packaging member and producing method thereof | |
CN106764560B (en) | Manufacturing method of LED lamp | |
CN106981555A (en) | A kind of tazza high reliability purple LED packaging and its manufacture method | |
CN206480621U (en) | A kind of LED chip inverted structure | |
CN104810462A (en) | ESOP8 lead frame of medium-and high-power LED driving chip | |
CN106058031B (en) | A kind of integrated form high power ultraviolet LED heat sink | |
KR20050035638A (en) | Manufacturing method and product of high power type led | |
CN209000902U (en) | A kind of encapsulating structure of frame clsss product enhancing heat dissipation | |
CN207503960U (en) | The encapsulating structure of the enhancing heat dissipation of encapsulated moulding | |
CN109244214A (en) | A kind of flip LED and packaging method | |
CN112635635A (en) | Glass lens UVCLED lamp bead and packaging method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180806 Address after: 212009 88 Wei Yi Road, Ding Mao Development Area, Zhenjiang, Jiangsu Patentee after: Wenrui Photoelectric Co., Ltd., Jiangsu Address before: 212009 88 Wei Yi Road, Ding Mao Development Area, Zhenjiang, Jiangsu Patentee before: Jiangsu Wenrun Optoelectronic Technology Co., Ltd. |
|
TR01 | Transfer of patent right |