CN207050863U - 一种立体双层结构的热释电非制冷自选频红外探测器 - Google Patents
一种立体双层结构的热释电非制冷自选频红外探测器 Download PDFInfo
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- CN207050863U CN207050863U CN201720843886.5U CN201720843886U CN207050863U CN 207050863 U CN207050863 U CN 207050863U CN 201720843886 U CN201720843886 U CN 201720843886U CN 207050863 U CN207050863 U CN 207050863U
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- 238000000034 method Methods 0.000 title abstract description 7
- 239000002355 dual-layer Substances 0.000 title abstract 4
- 230000005616 pyroelectricity Effects 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 65
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 32
- 239000006096 absorbing agent Substances 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims description 69
- 239000002184 metal Substances 0.000 claims description 69
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 44
- 229920005591 polysilicon Polymers 0.000 claims description 30
- 235000012239 silicon dioxide Nutrition 0.000 claims description 28
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 17
- 239000002120 nanofilm Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 abstract description 9
- 239000012528 membrane Substances 0.000 abstract 1
- 230000004043 responsiveness Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 92
- 238000001514 detection method Methods 0.000 description 11
- 239000010408 film Substances 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000007123 defense Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000005678 Seebeck effect Effects 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Application Number | Priority Date | Filing Date | Title |
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CN201720843886.5U CN207050863U (zh) | 2017-07-12 | 2017-07-12 | 一种立体双层结构的热释电非制冷自选频红外探测器 |
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CN201720843886.5U CN207050863U (zh) | 2017-07-12 | 2017-07-12 | 一种立体双层结构的热释电非制冷自选频红外探测器 |
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Publication Number | Publication Date |
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CN207050863U true CN207050863U (zh) | 2018-02-27 |
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CN201720843886.5U Expired - Fee Related CN207050863U (zh) | 2017-07-12 | 2017-07-12 | 一种立体双层结构的热释电非制冷自选频红外探测器 |
Country Status (1)
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CN (1) | CN207050863U (zh) |
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2017
- 2017-07-12 CN CN201720843886.5U patent/CN207050863U/zh not_active Expired - Fee Related
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Date | Code | Title | Description |
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210422 Address after: 611730 station 1, 7th floor, building 3, 66 Dayu East Road, Deyuan town (Jingrong town), Pixian County, Chengdu City, Sichuan Province Patentee after: Chengdu chuangdi Photoelectric Technology Co.,Ltd. Address before: 611731 Sichuan city of Chengdu province high tech Zone (West) Tianchen Road No. 88 Patentee before: CHENGDU YITAI TECHNOLOGY Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210826 Address after: 215163 No. 8 Xiangjie street, high tech Zone, Suzhou, Jiangsu Patentee after: Suzhou Zhongde Photoelectric Technology Co.,Ltd. Address before: 611730 station 1, 7th floor, building 3, 66 Dayu East Road, Deyuan town (Jingrong town), Pixian County, Chengdu City, Sichuan Province Patentee before: Chengdu chuangdi Photoelectric Technology Co.,Ltd. |
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TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180227 Termination date: 20210712 |
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CF01 | Termination of patent right due to non-payment of annual fee |