CN207009481U - A kind of polarized electric field regulates and controls two-dimensional semiconductor band structure - Google Patents
A kind of polarized electric field regulates and controls two-dimensional semiconductor band structure Download PDFInfo
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- CN207009481U CN207009481U CN201720838135.4U CN201720838135U CN207009481U CN 207009481 U CN207009481 U CN 207009481U CN 201720838135 U CN201720838135 U CN 201720838135U CN 207009481 U CN207009481 U CN 207009481U
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Abstract
This patent discloses a kind of polarized electric field to regulate and control two-dimensional semiconductor band structure.This method directly contacts polarization material with two-dimensional semiconductor, polarization material polarization after caused polarized electric field can Effective Regulation two-dimensional semiconductor band structure.Used device architecture is followed successively by dielectric substrate, two-dimensional semiconductor, metal and draws combination electrode, polarization material and electrode of metal from bottom to top.Metal polarization material two-dimensional semiconductor device architecture is formed, applies extra electric field, polarization material is polarized, then remove extra electric field.Other two-dimensional semiconductor band engineering methods are different from, this method can be achieved off field to regulate and control two-dimensional semiconductor band structure without outer using the retention performance that polarizes.Photoluminescence spectra result shows, in the presence of polarized electric field, the band structure of two-dimensional semiconductor has obtained Effective Regulation, therefore has expanded the application of such material.This method be provided simultaneously with extremely low power dissipation, it is easy to operate, stability is good the features such as.
Description
Technical field
This patent is related to a kind of polarized electric field regulation and control two-dimensional semiconductor band structure and preparation method, refers specifically to one kind and is based on
The residual polarization electric field regulation and control two-dimensional semiconductor band structure of iron electric polarization material.
Background technology
The two-dimensional semiconductor of layer structure, such as graphene, transient metal sulfide, due to the physical arrangement and light of uniqueness
Electrical property, them are made to possess huge potential in the field such as nanoelectronics and nanophotonics.Wherein, the energy of two-dimensional semiconductor
Band structure is rich and varied, and wave-length coverage can cover all band [Nature Photonics 8,899 (2014)], apply it
When possess very more selectivity.However, for single two-dimensional semiconductor material, its band structure still possesses certain limitation
Property, such as zero band gap feature of graphene, cause it not apply and [Nature Physics 9,49 in logic electronics device
(2013)]；And the band gap of transient metal sulfide causes it to be responded when photodetection is applied generally between 1-2eV
Visible ray is near infrared band [Nature Nanotechnology 8,497 (2013)].Therefore, in order to further optimizing
The performance of two-dimensional semiconductor, finds a kind of method and can effectively regulate and control the band structure of two-dimensional semiconductor and just seem particularly heavy
Will.For conventional semiconductor material, generally can using adulterate and regulation element proportioning by the way of etc. come realize can band adjust
Section.As silicon can make the band gap of silicon increase 325-750meV [Nature 410,192 by the boron ion injection of high dose
(2001)]；Mercury cadmium telluride can regulate and control its energy gap size [Journal of by adjusting element proportioning
Semiconductors 11,332 (2001)] [Chinese science:Mathematics 5,515 (1990)]；Zinc oxide can by with other gold
Belong to alloying to increase energy gap [Applied Physics Letters 72,2466 (1998)].And partly led to two dimension
In the research of the band engineering of body, a variety of other manners can also be used to manipulate its energy band in addition to above method.Change
The number of plies of two-dimensional semiconductor, by controlling the number of plies to reach to regulate and control the purpose of its band structure, such as molybdenum disulfide semiconductor, its
The band structure of monolayer material is direct band gap, has 1.8eV energy gap, and the band structure of body material is indirect belt
Gap, there is 1.2eV energy gap [Nanoscale 6,13283 (2014)].Chemical doping is carried out to two-dimensional semiconductor also may be used
To obtain certain band engineering effect, such as S.Tongay observes it by carrying out gas molecule doping to molybdenum disulfide
Band structure produces certain change [Nano Letter 13,2831 (2013)].Ion insertion is to improve two-dimensional semiconductor
A kind of new method of energy, the band structure of two-dimensional semiconductor can be equally adjusted, as Jiayu Wan et al. use different kinds of ions
Intercalation method realizes regulation and control [the Chemical Society Reviews 45,6742 to the band structure of two-dimensional semiconductor
(2016)].The purpose for adjusting its band structure can also be reached by applying stress to two-dimensional semiconductor surface, such as Yeung Yu Hui
Et al. stress is applied in vertical direction to three layers of molybdenum disulfide, observe that obvious move occurs for the peak value of its photoluminescence spectra
It is dynamic, illustrate that the energy band of two-dimensional semiconductor can also be regulated and controled [Acs Nano 7,7126 by additional vertical stress
(2013)], the same year, Hiram J.Conley et al. applies stress to individual layer curing horizontal direction, observes its luminescence generated by light
Spectrum also generates obvious movement, illustrates that lateral stress equally can cause the band structure of two-dimensional semiconductor to change
[Nano Letters 13,3626(2013)].In addition, also a kind of conventional method applies outer power up to two-dimensional semiconductor
Regulate and control its band structure, 2009, Yuanbo Zhang et al. when applying the voltage more than 100V to bilayer graphene,
As a result show the band gap of bilayer graphene can be opened, be expected to make graphene be applied to logic electronics device [Nature 459,
820(2009)]；2011, Ashwin Ramasubramaniam et al. utilized first-principles calculations, and transition metal is vulcanized
Beyond the region of objective existence adds a vertical electric field, can be compressed its band gap [Physical Review B 84,205325 (2011)].It is above-mentioned
It is many regulation and control two-dimensional semiconductor band structure method be enough to illustrate, by artificial mode regulate and control two-dimensional semiconductor can band tie
Structure can effectively improve material property, it is preferably applied in nanoelectronic and nano photoelectronic devices.
However, the method for regulation and control two-dimensional semiconductor band structure can not all realize stable regulation and control effect substantially based on more than
Fruit, and it is limited in one's ability to the band-gap tuning of two-dimensional semiconductor, many additional energies, or trivial operations are also add in addition,
These methods can not meet photodetector, or the practical application request of electronic device etc. to greatest extent.In order to effective
Ground solves this problem, and this patent proposes a kind of method of polarized electric field regulation and control two-dimensional semiconductor band structure.This method will
Organic ferroelectric polymers is combined with two-dimensional semiconductor, prepares the capacitor devices of metal-dielectric-two-dimensional semiconductor structure,
Applying extra electric field to device first causes organic ferroelectric polymers to polarize, and then removes extra electric field again, makes two-dimensional semiconductor
Only act upon under ferroelectric remnant polarization electric field, the residual polarization electric field can effectively regulate and control the energy band knot of two-dimensional semiconductor
Structure, improve the performance of material.
The content of the invention
This patent proposes a kind of polarized electric field regulation and control two-dimensional semiconductor band structure, be two-dimensional semiconductor energy band engineering with
And improve a kind of new approach of performance offer of two-dimensional semiconductor.
Above-mentioned patent directly contacts organic ferroelectric polymers with two-dimensional semiconductor, forms metal-polarization material-two dimension half
The device of conductor structure, after extra electric field makes organic ferroelectric polymers polarize, then extra electric field is removed, the residual polarization formed
Electric field can effectively regulate and control the band structure of two-dimensional semiconductor, to reach the purpose for improving two-dimensional semiconductor performance.
This patent refers to a kind of polarized electric field regulation and control two-dimensional semiconductor band structure and preparation method.Characterized in that, the party
Method directly contacts polarization material with two-dimensional semiconductor, and caused polarized electric field can Effective Regulation two dimension after polarization material polarization
The band structure of semiconductor；
This patent refers to a kind of polarized electric field regulation and control two-dimensional semiconductor band structure and preparation method.Characterized in that, the party
Method is at work without additional any electric field, and two-dimensional semiconductor material is only under the residual polarization electric field action of polarization material, i.e.,
Realize the regulation and control of band structure.
This patent refers to a kind of polarized electric field regulation and control two-dimensional semiconductor band structure and preparation method.Characterized in that, at this
In the presence of polarized electric field, the energy gap of two-dimensional semiconductor can be compressed.
This patent refers to a kind of polarized electric field regulation and control two-dimensional semiconductor band structure and preparation method, it is characterised in that is adopted
Device architecture is followed successively by from bottom to top：
- substrate 1,
- two-dimensional semiconductor 2,
- metal extraction combination electrode 3,
- polarization material 4,
- electrode of metal 5,
Wherein substrate 1 is dielectric substrate, and silica or quartz or sapphire may be selected；
Wherein two-dimensional semiconductor 2 is two-dimensional semiconductor material, and thickness is 2 layers to 5 layers molecule；
It is chromium and golden (Cr/Au) or titanium and golden (Ti/Au) or palladium and golden (Pd/Au) electricity that wherein metal, which draws combination electrode 3,
Pole, lower metal chromium or titanium or palladium thickness are thickness 5-10 nanometers, and upper strata metallic gold thickness is 30-50 nanometers, and the metal draws
Going out combination electrode and described two-dimensional semiconductor 2 has good Ohmic contact；
Wherein polarization material 4 is polyvinylidene fluoride ferroelectric polymers, and thickness is 50-300 nanometers；
Wherein electrode of metal 5 is metallic aluminium, and thickness is 8-10 nanometers.
This patent refers to a kind of polarized electric field regulation and control two-dimensional semiconductor band structure and preparation method, it is characterised in that required
Device prepare comprise the following steps：
1) substrate cleans
Dielectric substrate silica or quartz or sapphire are sequentially placed into acetone, alcohol, deionized water and are cleaned by ultrasonic 5
Nitrogen dries up after minute, then is placed in baking oven 105 DEG C and dries 10 minutes.
2) two-dimensional semiconductor is prepared and shifted
Two-dimensional semiconductor is transferred to by insulated substrate surface using mechanical stripping transfer method, thickness is 2 layers to 5 layers points
Son.
3) metal draws the preparation of combination electrode
Using electron beam lithography or ultraviolet photolithographic technology, prepare metal with reference to thermal evaporation metal and stripping technology and draw
Combination electrode, electrode are chromium and golden (Cr/Au) or titanium and golden (Ti/Au) or palladium and gold (Pd/Au) electrode, lower metal chromium or titanium
Or palladium thickness is thickness 5-10 nanometers, upper strata metallic gold thickness is 30-50 nanometers, then passes through 2 hours very at a temperature of being placed in 200 DEG C
Sky annealing, it is ensured that metal, which is drawn between combination electrode and two-dimensional semiconductor, possesses good Ohmic contact.
4) prepared by polarization material
After preparing metal and drawing combination electrode, prepare polarization material polyvinylidene fluoride ferroelectricity with spin coating method and gather
Compound polyvinylidene fluoride (P (VDF-TrFE)), and annealing 4-6 hours ensure ferroelectric thin film at a temperature of 110 DEG C -140 DEG C
Crystallization property, the thickness 50-300 nanometers of the polarization material polyvinylidene fluoride ferroelectric polymer film.
5) prepared by electrode of metal
Electrode of metal is prepared in polarization material, passes through thermal evaporation metal combination negtive photoresist ultraviolet photolithographic and argon ion etching
Method obtains the electrode pattern of special pattern structure.Electrode of metal material is aluminium, and thickness is 8-10 nanometers.
In the presence of extra electric field, dipole inside polarization material will proper alignment in one direction, then remove
Extra electric field, the direction of dipole still keep polarized electric field that is constant, and can producing certain, and the effect is polarization material
Polarity effect.Polyvinylidene fluoride ferroelectric polymers polyvinylidene fluoride (P (VDF-TrFE)) has this conclusion of polarity effect
Early have been found, it is 7 μ C/cm that its remanent polarization is reachable2, such as 300nm, thick P (VDF-TrFE) acts on few layer of curing
During molybdenum surface, caused electric field is up to 10 after polarization9V/m.P (VDF-TrFE) is directly contacted with two-dimensional semiconductor, formed
The device of metal-polarization material-two-dimensional semiconductor structure, after P (VDF-TrFE) polarizes, in the effect of residual polarization electric field
Under, the band structure of two-dimensional semiconductor obtains Effective Regulation.This method not only reduces complex process degree, also reduces simultaneously
Power consumption when device works, the band structure of two-dimensional semiconductor is set only to obtain Effective Regulation under polarized electric field effect.Device exists
Principle schematic during work is as shown in Fig. 2 schematic diagrames of the wherein Fig. 2 (a) for P (VDF-TrFE) polarization when upward, Fig. 2 (b)
For schematic diagram of P (VDF-TrFE) polarization when downward, Fig. 2 (c) is the energy band of two-dimentional semi-conducting material before P (VDF-TrFE) polarization
Structural representation, Fig. 2 (d) are band structure of the two-dimensional semiconductor material under polarized electric field effect after P (VDF-TrFE) polarization
Schematic diagram.Before P (VDF-TrFE) polarization and after polarization, the energy gap of two-dimensional semiconductor material is by Eg1It is adjusted to Eg2, its
Middle Eg1>Eg2.Shown in the application example of this method such as Fig. 3 (a)-(c), two-dimensional semiconductor material is that molybdenum disulfide is respectively acting on P
(VDF-TrFE) photoluminescence spectra such as Fig. 3 (a) before and after polarized electric field downwardly and upwardly and 3 (b) are shown；Two-dimensional semiconductor
Material is shown in photoluminescence spectra such as Fig. 3 (c) before and after two tungsten selenides act on the downward polarized electric fields of P (VDF-TrFE).
The advantages of this patent patent, is：This patent directly contacts polarization material with two-dimensional semiconductor material, based on gold
Category-polarization material-two-dimensional semiconductor structure, after extra electric field makes polarization material polarize, then remove extra electric field.Wherein, utilize
The polarization characteristic of polarization material polyvinylidene fluoride (P (VDF-TrFE)) is straight by residual polarization electric field caused by P (VDF-TrFE)
Connect and act on two-dimensional semiconductor surface so that the band structure of two-dimensional semiconductor obtains Effective Regulation.Thick P (the VDF- such as 300nm
When TrFE) acting on few layer of molybdenum disulfide surface, caused local poling electric field can reach 109V/m, fully meet electricity
The requirement of field regulation and control two-dimensional semiconductor band structure, is now not required to any extra electric field.In addition, this method is also provided simultaneously with stabilization
Property is good, simple in construction, the features such as easily preparing.
Brief description of the drawings
Fig. 1 is 3 layers of MoS2In the front and rear photoluminescence spectra of the polarized electric field effect of polarization material, left inset is polarization
The schematic cross-section that material directly contacts with two-dimensional semiconductor material, right side illustration are two-dimensional semiconductor before polarized electric field regulation and control
Band structure schematic diagram afterwards, Eg1For the energy gap of two-dimentional semi-conducting material before regulation and control, Eg2For two-dimensional semiconductor material after regulation and control
The energy gap of material, wherein Eg1>Eg2。
Fig. 2 is principle schematic when polarized electric field regulates and controls the device work needed for two-dimensional semiconductor band structure method.
In figure：(a) principle schematic of the two-dimensional semiconductor material effects in the upward polarized electric fields of P (VDF-TrFE), in figure：1 is exhausted
Edge substrate, 2 two-dimensional semiconductors, 3 metals draw combination electrode, 4 polarization materials, 5 electrode of metal；(b) two-dimensional semiconductor material
Principle schematic during the downward polarized electric fields of P (VDF-TrFE) is acted on, wherein, P represents P (VDF-TrFE) residual polarization
Intensity, E represent polarized electric field caused by P (VDF-TrFE) residual polarization；(c) two dimension is partly led before P (VDF-TrFE) polarization
The band structure schematic diagram of body material, Eg1For the energy gap of now two-dimensional semiconductor material；(d) after P (VDF-TrFE) polarization
The band structure schematic diagram of two-dimensional semiconductor material, Eg2For the energy gap of now two-dimensional semiconductor material.
Fig. 3 polarized electric fields regulate and control two-dimensional semiconductor band structure method application example.In figure：(a) two-dimensional semiconductor is 5 layers
Molybdenum disulfide (MoS2) when, when the P (VDF-TrFE) thick with 50nm is directly contacted, the unpolarized and downward polarization of P (VDF-TrFE)
When photoluminescence spectra；(b) two-dimensional semiconductor is 3 layers of molybdenum disulfide (MoS2), it is direct with P (VDF-TrFE) thick 300nm
During contact, P (VDF-TrFE) is unpolarized and photoluminescence spectra during upward polarization；(c) two-dimensional semiconductor is 2 layer of two tungsten selenide
(WSe2), when the P (VDF-TrFE) thick with 200nm is directly contacted, P (VDF-TrFE) is unpolarized and photic hair during downward polarization
Light spectrum.
Embodiment
Example 1：
The example 1 of this patent is elaborated below in conjunction with the accompanying drawings：
This patent proposes a kind of polarized electric field regulation and control two-dimensional semiconductor band structure and preparation method.Utilize P (VDF-
TrFE) polarized electric field caused by the polarity effect of ferroelectric polymer material, can be with Effective Regulation be carried out to two-dimensional semiconductor, can
To realize the band gap of compression two-dimensional material, the purpose of material property is improved.
Comprise the following steps that：
1. substrate selects
From 0.5 millimeter of thickness heavily doped n-type silicon as substrate, by thermal oxidation method in surface of silicon, oxidation system
The silica of standby 300 nano thickness.
2. silicon dioxide insulator substrate cleans
Dielectric substrate silica is sequentially placed into nitrogen after in acetone, alcohol, deionized water being cleaned by ultrasonic 5 minutes to blow
It is dry, then be placed in baking oven 105 DEG C and dry 10 minutes.
3. two-dimensional semiconductor material prepares and transfer
With adhesive tape by two-dimensional semiconductor MoS2Carry out mechanical stripping, after transfer them to SiO2Insulated substrate surface, MoS2It is thick
Degree 5 molecular layers of selection.
4. metal is drawn combination electrode and prepared
Metal, which is prepared, using electron beam exposure method draws combination electrode figure；Metal composite is prepared using thermal evaporation techniques
Electrode, 5 nanometers of chromium, 30 nanometers of gold；With reference to stripping means, stripping metal film, obtain metal and draw combination electrode.
5. annealing
Sample is placed at a temperature of 200 DEG C of vacuum annealing furnace and annealed 2 hours, it is ensured that metal draws combination electrode and MoS2It
Between form good Ohmic contact.
6. prepared by polarization material layer
Polarization material P (VDF-TrFE) layer is prepared with spin coating method on the basis of more than, and is annealed at a temperature of 140 DEG C
4 hours crystallization properties for ensureing P (VDF-TrFE) film, the thickness of P (VDF-TrFE) ferroelectric dielectric layer is 50 nanometers.
7. prepared by electrode of metal
Prepare 8 nano metal aluminium by thermal evaporation techniques first on polarization material layer, then using negtive photoresist ultraviolet photolithographic and
Argon ion etching method obtains the electrode of metal of special pattern structure.
8. electrical testing
After the completion of prepared by device, to 5 layers of MoS of two-dimensional semiconductor2Carry out luminescent spectrum sign (PL).Wherein test is used
Optical maser wavelength is 532nm, and power 2mW, facula area is 2-3 μm.PL spectrum during unpolarized and downward polarization are tested respectively.
P (VDF-TrFE) thick 50nm is after external electric field poling, caused residual polarization electric field P ≈ 7uC/cm2, the polarized electric field
Act on 5 layers of MoS2Surface, by calculating polarized electric field E ≈ 109V/m.As shown in Fig. 3 (a), it can be seen that 5 layers of MoS2In P
(VDF-TrFE) under the regulation and control of downward polarized electric field, its PL peak produces obvious red shift, and 686.14nm is moved to by 677.69nm,
Wavelength change is Δ λ=8.45nm, and energy gap is about compressed by 23meV, i.e. Δ Eg=23meV.As a result this patent one is illustrated
The method of kind polarized electric field regulation and control two-dimensional semiconductor band structure is applied to 5 layers of MoS of two-dimensional semiconductor2When, polarized electric field can be with
Effectively compress 5 layers of MoS2Band gap.This method possesses the features such as low in energy consumption, easy and effective simultaneously.
Example 2：
The example 2 of this patent is elaborated below in conjunction with the accompanying drawings：
This patent proposes a kind of polarized electric field regulation and control two-dimensional semiconductor band structure and preparation method.Utilize P (VDF-
TrFE) polarized electric field caused by the polarity effect of ferroelectric polymer material, can be with Effective Regulation be carried out to two-dimensional semiconductor, can
To realize the band gap of compression two-dimensional material, the purpose of material property is improved.
Comprise the following steps that：
1. substrate selects
From 1 millimeter of thickness quartz as substrate.
2. quartz insulator substrate cleans
Dielectric substrate quartz is sequentially placed into nitrogen after in acetone, alcohol, deionized water being cleaned by ultrasonic 5 minutes to dry up, then
105 DEG C are placed in baking oven to dry 10 minutes.
3. two-dimensional semiconductor material prepares and transfer
With adhesive tape by two-dimensional semiconductor MoS2Carry out mechanical stripping, after transfer them to quartz insulator substrate surface, MoS2It is thick
Degree 3 molecular layers of selection.
4. metal is drawn combination electrode and prepared
Metal, which is prepared, using ultraviolet photolithographic method draws combination electrode figure；Metal is prepared using thermal evaporation techniques to draw again
Composite electrode, 7 nanometers of titanium, 40 nanometers of gold；With reference to stripping means, stripping metal film, obtain metal and draw combination electrode.
5. annealing
Sample is placed at 200 DEG C of vacuum annealing furnace and annealed 2 hours, it is ensured that metal draws combination electrode and MoS2Between shape
Into good Ohmic contact.
6. prepared by polarization material layer
Polarization material P (VDF-TrFE) layer is prepared with spin coating method on the basis of more than, and is annealed at a temperature of 130 DEG C
5 hours crystallization properties for ensureing P (VDF-TrFE) film, the thickness of P (VDF-TrFE) layer film is 300 nanometers.
7. prepared by electrode of metal
Prepare 9 nano metal aluminium by thermal evaporation techniques first on polarization material layer, then using negtive photoresist ultraviolet photolithographic and
Argon ion etching method obtains the electrode of metal of special pattern structure.
8. electrical testing
After the completion of prepared by device, to 3 layers of MoS of two-dimensional semiconductor2Carry out luminescent spectrum sign (PL).Wherein test is used
Optical maser wavelength is 532nm, and power 2mW, facula area is 2-3 μm.PL spectrum during unpolarized and upward polarization are tested respectively.
P (VDF-TrFE) thick 300nm is after external electric field poling, caused residual polarization electric field P ≈ 7uC/cm2, polarization electricity
Field action is in 3 layers of MoS2Surface, by calculating polarized electric field E ≈ 109V/m.As shown in Fig. 3 (b), it can be seen that 3 layers of MoS2
Under the upward polarized electric field regulation and control of P (VDF-TrFE), its PL peak produces obvious red shift, is moved to by 678.86nm
687.08nm, wavelength change are Δ λ=8.22nm, and energy gap is about compressed by 21.8meV, i.e. Δ Eg=21.8meV.As a result
Illustrate that a kind of method of polarized electric field regulation and control two-dimensional semiconductor band structure of this patent is applied to 3 layers of MoS of two-dimensional semiconductor2When,
Polarized electric field can effectively compress 3 layers of MoS2Band gap.This method possesses the features such as low in energy consumption, easy and effective simultaneously.
Example 3：
The example 3 of this patent is elaborated below in conjunction with the accompanying drawings：
This patent proposes a kind of polarized electric field regulation and control two-dimensional semiconductor band structure and preparation method.Utilize P (VDF-
TrFE) polarized electric field caused by the polarity effect of ferroelectric polymer material, can be with Effective Regulation be carried out to two-dimensional semiconductor, can
To realize the band gap of compression two-dimensional material, the purpose of material property is improved.
Comprise the following steps that：
1. substrate selects
From 0.5 millimeter of thickness sapphire as substrate.
2. sapphire edge substrate cleans
Dielectric substrate sapphire is sequentially placed into nitrogen after in acetone, alcohol, deionized water being cleaned by ultrasonic 5 minutes to dry up,
105 DEG C are placed in baking oven again to dry 10 minutes.
3. two-dimensional semiconductor material prepares and transfer
With adhesive tape by two-dimensional semiconductor WSe2Carry out mechanical stripping, after transfer them to sapphire insulated substrate surface, WSe2
Thickness selects 2 molecular layers.
4. metal is drawn combination electrode and prepared
Metal, which is prepared, using electron beam exposure method draws combination electrode figure；Metal is prepared using thermal evaporation techniques to draw
Combination electrode, 10 nanometers of palladium, 50 nanometers of gold；With reference to stripping means, stripping metal film, obtain metal and draw combination electrode.
5. annealing
Sample is placed at 200 DEG C of vacuum annealing furnace and annealed 2 hours, it is ensured that metal draws combination electrode and WSe2Between shape
Into good Ohmic contact.
6. prepared by polarization material layer
Polarization material P (VDF-TrFE) layer is prepared with spin coating method on the basis of more than, and is annealed at a temperature of 110 DEG C
6 hours crystallization properties for ensureing P (VDF-TrFE) film, the thickness of P (VDF-TrFE) layer film is 200 nanometers.
7. prepared by electrode of metal
Prepare 10 nano metal aluminium by thermal evaporation techniques first on polarization material layer, then using negtive photoresist ultraviolet photolithographic and
Argon ion etching method obtains the electrode of metal of special pattern structure.
8. electrical testing
After the completion of prepared by device, to 2 layers of WSe of two-dimensional semiconductor2Carry out luminescent spectrum sign (PL).Wherein test is used
Optical maser wavelength is 532nm, and power 2mW, facula area is 2-3 μm.PL spectrum during unpolarized and upward polarization are tested respectively.
P (VDF-TrFE) thick 200nm is after external electric field poling, caused residual polarization electric field P ≈ 7uC/cm2, polarization electricity
Field action is in 2 layers of WSe2Surface, by calculating polarized electric field E ≈ 109V/m.As shown in Fig. 3 (c), it can be seen that 2 layers of WSe2
Under the upward polarized electric field regulation and control of P (VDF-TrFE), its PL peak produces obvious red shift, is moved to by 811.2nm
823.3nm, wavelength change are Δ λ=12.1nm, and energy gap is about compressed by 22.5meV, i.e. Δ Eg=22.5meV.As a result
Illustrate that a kind of method of polarized electric field regulation and control two-dimensional semiconductor band structure of this patent is applied to 2 layers of WSe of two-dimensional semiconductor2When,
Polarized electric field can effectively compress 2 layers of WSe2Band gap.This method possesses the features such as low in energy consumption, easy and effective simultaneously.
Claims (1)
1. a kind of polarized electric field regulates and controls two-dimensional semiconductor band structure, it is characterised in that
Described two-dimensional semiconductor band structure is directly to contact polarization material with two-dimensional semiconductor, after being polarized by polarization material
Caused polarized electric field regulates and controls the band structure of two-dimensional semiconductor；
Required device architecture is followed successively by from bottom to top：Dielectric substrate (1), two-dimensional semiconductor (2), metal draw combination electrode
(3), polarization material (4), electrode of metal (5)；Wherein：
Described dielectric substrate (1) is silica or quartz or sapphire；
Described two-dimensional semiconductor (2) material, thickness are 2 layers to 5 layers molecular layer；
It is chromium and golden (Cr/Au) or titanium and golden (Ti/Au) or palladium and golden (Pd/Au) that described metal, which draws combination electrode (3),
Combination electrode, lower metal chromium or titanium or palladium thickness are thickness 5-10 nanometers, and upper strata metallic gold thickness is 30-50 nanometers, and should
Metal, which draws combination electrode and described two-dimensional semiconductor (2), has good Ohmic contact；
Described polarization material (4) is polyvinylidene fluoride ferroelectric polymers, and thickness is 50-300 nanometers；It is electric on described metal
Pole (5) is metallic aluminium, and thickness is 8-10 nanometers.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107170893A (en) * | 2017-07-12 | 2017-09-15 | 中国科学院上海技术物理研究所 | A kind of polarized electric field regulation and control two-dimensional semiconductor band structure and preparation method |
| CN113782667A (en) * | 2021-09-15 | 2021-12-10 | 湘潭大学 | Method for regulating and controlling piezoelectric performance of two-dimensional material based on substrate and irradiation |
| CN109950403B (en) * | 2019-03-29 | 2024-03-26 | 中国科学院上海技术物理研究所 | Ferroelectric field regulated two-dimensional material PN junction photoelectric detector and preparation method thereof |
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2017
- 2017-07-12 CN CN201720838135.4U patent/CN207009481U/en not_active Withdrawn - After Issue
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107170893A (en) * | 2017-07-12 | 2017-09-15 | 中国科学院上海技术物理研究所 | A kind of polarized electric field regulation and control two-dimensional semiconductor band structure and preparation method |
| CN107170893B (en) * | 2017-07-12 | 2023-07-04 | 中国科学院上海技术物理研究所 | Two-dimensional semiconductor energy band structure regulated and controlled by polarized electric field and preparation method |
| CN109950403B (en) * | 2019-03-29 | 2024-03-26 | 中国科学院上海技术物理研究所 | Ferroelectric field regulated two-dimensional material PN junction photoelectric detector and preparation method thereof |
| CN113782667A (en) * | 2021-09-15 | 2021-12-10 | 湘潭大学 | Method for regulating and controlling piezoelectric performance of two-dimensional material based on substrate and irradiation |
| CN113782667B (en) * | 2021-09-15 | 2023-11-14 | 湘潭大学 | Method for regulating and controlling piezoelectric performance of two-dimensional material based on substrate and irradiation |
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