CN206992154U - Image-forming component and electronic equipment - Google Patents

Image-forming component and electronic equipment Download PDF

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Publication number
CN206992154U
CN206992154U CN201720194725.8U CN201720194725U CN206992154U CN 206992154 U CN206992154 U CN 206992154U CN 201720194725 U CN201720194725 U CN 201720194725U CN 206992154 U CN206992154 U CN 206992154U
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China
Prior art keywords
electrode
image
forming component
photoelectric conversion
layer
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Inventor
富樫秀晃
古闲史彦
山口哲司
平田晋太郎
渡部泰郎
渡部泰一郎
安藤良洋
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Sony Corp
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Sony Corp
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14607—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
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    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/353—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising blocking layers, e.g. exciton blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

The utility model provides a kind of image-forming component and electronic equipment.The image-forming component may include：Substrate, the substrate have the first photoelectric conversion unit；And second photoelectric conversion unit, second photoelectric conversion unit are located at the light incident side of the substrate.Second photoelectric conversion unit can include：Photoelectric conversion layer；First electrode；Second electrode above the photoelectric conversion layer；3rd electrode；And the insulating materials between the 3rd electrode and the photoelectric conversion layer, wherein, a part for the insulating materials is between the first electrode and the 3rd electrode.

Description

Image-forming component and electronic equipment
Technical field
It the utility model is related to image-forming component, cascade type image-forming component and solid state image pickup device.
Background technology
Organic semiconducting materials are used for the image-forming component of photoelectric conversion layer to carry out photoelectricity to particular color (wave band) Conversion., can be with the case of the image-forming component that the image-forming component is used as in solid state image pickup device further, since the characteristic Realize following sub-pixel structure (cascade type image-forming component)：Wherein, each sub-pixel is configured to piece providing color filters (on-chip Color filter, OCCF) and image-forming component combination, and sub-pixel is two-dimensionally arranged (for example, with reference to JP 2011- 138927A).Further, since demosaicing processing need not be carried out, therefore the advantage is that to be not in false color.Pay attention to, following In explanation, in some cases, for purposes of illustration only, will be arranged on above semiconductor substrate and including photoelectric conversion unit Image-forming component is referred to as " first kind image-forming component "；For purposes of illustration only, the opto-electronic conversion list that first kind image-forming component will be formed Member is referred to as " first kind photoelectric conversion unit "；For purposes of illustration only, the image-forming component being arranged in semiconductor substrate is referred to as " the Two type image-forming components ", and for purposes of illustration only, the photoelectric conversion unit for forming Second Type image-forming component is referred to as " second Type photoelectric conversion unit ".
Figure 49 illustrates the implementation of the structure of cascade type image-forming component in the prior art (cascade type solid state image pickup device) Example.In the embodiment shown in Figure 49, the 3rd photoelectric conversion unit 331 and the second photoelectric conversion unit 321 are to form to make respectively To form the 3rd image-forming component 330 of the Second Type image-forming component in the semiconductor substrate 370 being stacked and the second imaging The Second Type photoelectric conversion unit of element 320.In addition, the first photoelectric conversion unit 311 is to be arranged in semiconductor substrate 370 The first kind photoelectric conversion unit of top (specifically, the top of the second image-forming component 320).The quilt of first photoelectric conversion unit 311 It is configured to include first electrode 311, photoelectric conversion layer 315 and second electrode 316 made of organic material, and the first light Electric converting unit forms the first image-forming component 310 as first kind image-forming component.Due to the difference of absorption coefficient, the second light The electric photoelectric conversion unit 331 of converting unit 321 and the 3rd carries out opto-electronic conversion to such as blue light and red light respectively.In addition, First photoelectric conversion unit 311 carries out opto-electronic conversion to such as green light.
By the opto-electronic conversion in the second photoelectric conversion unit 321 and the 3rd photoelectric conversion unit 331 and the electric charge that generates It is stored temporarily in the second photoelectric conversion unit 321 and the 3rd photoelectric conversion unit 331, hereafter, via vertical transistor npn npn These electric charges are transmitted separately to second and floated by (showing its gate portion 322) and transmission transistor (showing its gate portion 332) Dynamic diffusion layer (Floating Diffusion) FD2With the 3rd floating diffusion layer FD3.These electric charges are further exported to outside Reading circuit (not shown).Above-mentioned transistor and floating diffusion layer FD2、FD3It is also formed in semiconductor substrate 370.
By the opto-electronic conversion in the first photoelectric conversion unit 311 and the electric charge that generates via contact hole portion 361 and distribution Layer 362 stores to formation the first floating diffusion layer FD in semiconductor substrate 3701In.First photoelectric conversion unit 311 The gate portion 318 for the amplifying transistor that the quantity of electric charge is converted into voltage is connected to by contacting hole portion 361 and wiring layer 362.Separately Outside, the first floating diffusion layer FD1Form a part for reset transistor (showing its gate portion 317).Pay attention to, reference 371 represent element isolation zone, and reference 372 represents to form the oxide-film on the surface of semiconductor substrate 370, reference 376 and 381 represent interlayer insulating film, and reference 383 represents protective layer, and reference 390 represents lenticule on piece.
Reference listing
Patent document
Patent document 1：JP 2011-138927A
Utility model content
Technical problem
However, generated by opto-electronic conversion in the second photoelectric conversion unit 321 and the 3rd photoelectric conversion unit 331 Electric charge is stored temporarily in the second photoelectric conversion unit 321 and the 3rd photoelectric conversion unit 331, and hereafter, these electric charges are distinguished Transmit to the second floating diffusion layer FD2With the 3rd floating diffusion layer FD3.Therefore, it is possible to completely depleted second photoelectric conversion unit 321 and the 3rd photoelectric conversion unit 331.However, by the opto-electronic conversion in the first photoelectric conversion unit 311 and the electric charge that generates It is stored directly in the first floating diffusion layer FD1In.Accordingly, it is difficult to completely depleted first photoelectric conversion unit 311.Therefore, kTC makes an uproar Sound increases, random noise deterioration, so that the deterioration in image quality of imaging.
The utility model aims to provide one kind and photoelectric conversion unit is arranged in above semiconductor substrate and has energy Enough suppress the image-forming component of the configuration and structure of image quality degradation, the cascade type image-forming component and bag that the image-forming component is formed Include the solid state image pickup device of the image-forming component or cascade type image-forming component.
Technical scheme
According to the first embodiment of the present utility model, there is provided a kind of image-forming component.The image-forming component can include： Substrate, the substrate have the first photoelectric conversion unit；And the second photoelectric conversion unit of the light incident side in the substrate. Second photoelectric conversion unit can include photoelectric conversion layer, first electrode, second above the photoelectric conversion layer Insulating materials between electrode, the 3rd electrode and the 3rd electrode and the photoelectric conversion layer, wherein, the insulating materials A part between the first electrode and the 3rd electrode.
According to the second embodiment of the present utility model, there is provided a kind of electronic equipment, the electronic equipment include：Imaging Device, the imaging device include：Substrate, the substrate have the first photoelectric conversion unit；And enter in the light of the substrate Penetrate the second photoelectric conversion unit of side.Second photoelectric conversion unit may include photoelectric conversion layer, first electrode, the opto-electronic conversion The insulating materials between second electrode, the 3rd electrode and the 3rd electrode and the photoelectric conversion layer above layer, wherein, A part for the insulating materials is between the first electrode and the 3rd electrode, and lens are configured to draw light It is directed at the surface of the imaging device.
Beneficial effect
In the image-forming component according to embodiment of the present utility model, form according to the layer of embodiment of the present utility model The image-forming component or composition according to embodiment of the present utility model of stack-type image-forming component are real according to of the present utility model first Apply the image-forming component according to embodiment of the present utility model of the solid state image pickup device of scheme or the second embodiment (below In, in some cases, these image-forming components are referred to as " image-forming component according to embodiment of the present utility model etc. ") In, due to comprising discretely being arranged with first electrode and be arranged to the charge storage electrode in face of photoelectric conversion layer (in electric charge Inserted with insulating barrier between storage electrode and photoelectric conversion layer), therefore can store light when using up irradiation photoelectric conversion unit The electric charge of electric conversion layer, and opto-electronic conversion is carried out to light in photoelectric conversion unit.Therefore, when starting exposure, by complete Fully- depleted charge storage elements, electric charge can be removed.Therefore, it is possible to suppress the increase of kTC noises, random noise deterioration and imaging When deterioration in image quality these phenomenons appearance.In the driving side of the solid state image pickup device according to embodiment of the present utility model In method, each image-forming component have from the incident light in second electrode side will not incident structure on the first electrode, therefore all In image-forming component, electric charge is stored in photoelectric conversion layer simultaneously, and the electric charge of first electrode is discharged to outside, enabling Reliably simultaneously first electrode is resetted in all image-forming components.Then, in all image-forming components, it is stored in opto-electronic conversion Electric charge in layer is transferred to first electrode simultaneously, and after the transfer is complete, sequentially reads out in each image-forming component It is transferred to the electric charge of first electrode.Therefore, it is possible to easily realize so-called global shutter function.Pay attention to, in the description The effect of disclosure is exemplary rather than restricted, and can also have additional effect.
Brief description of the drawings
Figure 1A -1D are the image-forming component of embodiment 1 and the schematic partial cross section figure of cascade type image-forming component.
Fig. 2 is the image-forming component of embodiment 1 and the equivalent circuit diagram of cascade type image-forming component.
Fig. 3 is the image-forming component of embodiment 1 and the equivalent circuit diagram of cascade type image-forming component.
Fig. 4 is the first electrode and charge storage electrode and composition control unit for the image-forming component for forming embodiment 1 The schematic layout figure of transistor.
Fig. 5 is the figure for showing the potential state of each part during the operation of the image-forming component of embodiment 1.
Fig. 6 is the first electrode of image-forming component and the schematic layout figure of charge storage electrode for forming embodiment 1.
Fig. 7 is first electrode, charge storage electrode, second electrode and the contact hole for the image-forming component for forming embodiment 1 The schematic perspective view in portion.
Fig. 8 is the concept map of the solid state image pickup device of embodiment 1.
Fig. 9 be embodiment 1 image-forming component and cascade type image-forming component variation equivalent circuit diagram.
Figure 10 is the first electrode and electric charge storage electricity of the variation for the image-forming component for forming embodiment 1 as shown in Figure 9 The schematic layout figure of the transistor of pole and composition control unit.
Figure 11 is the image-forming component of embodiment 2 and the schematic partial cross section figure of cascade type image-forming component.
Figure 12 is the image-forming component of embodiment 3 and the schematic partial cross section figure of cascade type image-forming component.
Figure 13 be embodiment 3 image-forming component and cascade type image-forming component variation schematic partial cross section figure.
Figure 14 is the schematic partial cross section figure of another variation of the image-forming component of embodiment 3.
Figure 15 A-15D are the schematic partial cross section figures of another variation of the image-forming component of embodiment 3.
Figure 16 be embodiment 4 image-forming component and cascade type image-forming component a part schematic partial cross section figure.
Figure 17 is the image-forming component of embodiment 4 and the equivalent circuit diagram of cascade type image-forming component.
Figure 18 is the image-forming component of embodiment 4 and the equivalent circuit diagram of cascade type image-forming component.
Figure 19 be form embodiment 4 image-forming component first electrode, transmission coordination electrode and charge storage electrode and Form the schematic layout figure of the transistor of control unit.
Figure 20 is the figure for showing the potential state of interior each part during the operation of the image-forming component of embodiment 4.
Figure 21 is the potential state for showing interior each part during another operation of the image-forming component of embodiment 4 Figure.
Figure 22 is that the first electrode, transmission coordination electrode and charge storage electrode of the image-forming component for forming embodiment 4 are shown Meaning property layout.
Figure 23 is the first electrode for the image-forming component for forming embodiment 4, transmission coordination electrode, charge storage electrode, second Electrode and the schematic perspective view for contacting hole portion.
Figure 24 is the first electrode, transmission coordination electrode and electric charge storage of the variation for the image-forming component for forming embodiment 4 The schematic layout figure of electrode and the transistor of composition control unit.
Figure 25 be embodiment 5 image-forming component and cascade type image-forming component a part schematic partial cross section figure.
Figure 26 is first electrode, charge storage electrode and the electric charge discharge electrode for the image-forming component for forming embodiment 5 Schematic layout figure.
Figure 27 is to form the first electrode of image-forming component of embodiment 5, charge storage electrode, electric charge discharge electrode, second Electrode and the schematic perspective view for contacting hole portion.
Figure 28 be embodiment 6 image-forming component and cascade type image-forming component a part schematic partial cross section figure.
Figure 29 is the image-forming component of embodiment 6 and the equivalent circuit diagram of cascade type image-forming component.
Figure 30 is the image-forming component of embodiment 6 and the equivalent circuit diagram of cascade type image-forming component.
Figure 31 is the first electrode and charge storage electrode and composition control unit for the image-forming component for forming embodiment 6 The schematic layout figure of transistor.
Figure 32 is the figure for showing the potential state of interior each part during the operation of the image-forming component of embodiment 6.
Figure 33 is to show during another operation of the image-forming component of embodiment 6 each part in (during transmission) The figure of potential state.
Figure 34 is the first electrode of image-forming component and the schematic layout figure of charge storage electrode for forming embodiment 6.
Figure 35 is first electrode, charge storage electrode, second electrode and the contact hole for the image-forming component for forming embodiment 6 The schematic perspective view in portion.
Figure 36 is the first electrode of variation and the schematic cloth of charge storage electrode for the image-forming component for forming embodiment 6 Office's figure.
Figure 37 be embodiment 1 image-forming component and cascade type image-forming component another variation schematic layout figure.
Figure 38 be embodiment 1 image-forming component and cascade type image-forming component another variation schematic layout figure.
Figure 39 A, 39B and 39C be embodiment 1 image-forming component and cascade type image-forming component another variation first The schematic amplification partial cross section view of the parts such as electrode.
Figure 40 be embodiment 5 image-forming component and cascade type image-forming component another variation electric charge discharge electrode etc. Partial schematic amplification partial cross section view.
Figure 41 be embodiment 1 image-forming component and cascade type image-forming component another variation schematic partial cross sectional Face figure.
Figure 42 be embodiment 1 image-forming component and cascade type image-forming component another variation schematic partial cross sectional Face figure.
Figure 43 be embodiment 1 image-forming component and cascade type image-forming component another variation schematic partial cross sectional Face figure.
Figure 44 be embodiment 4 image-forming component and cascade type image-forming component another variation schematic partial cross sectional Face figure.
Figure 45 be embodiment 1 image-forming component and cascade type image-forming component another variation schematic partial cross sectional Face figure.
Figure 46 A-46D be embodiment 1 image-forming component and cascade type image-forming component another variation schematic office Cross section figure.
Figure 47 be embodiment 4 image-forming component and cascade type image-forming component another variation schematic partial cross sectional Face figure.
Figure 48 is to use consolidating comprising the image-forming component according to embodiment of the present utility model and cascade type image-forming component The concept map of the example of the electronic equipment (camera) of state imaging device.
Figure 49 is the concept map of cascade type image-forming component of the prior art (cascade type solid state image pickup device).
Embodiment
Hereinafter, the utility model is illustrated with reference to the accompanying drawings and based on embodiment.However, the utility model is not limited to These embodiments, and the various numerical value and material in embodiment are exemplary.Pay attention to, illustrate in the following order.
1. according to the image-forming component of embodiment of the present utility model, the cascade type according to embodiment of the present utility model Image-forming component, according to the solid state image pickup device of the first embodiment of the present utility model or the second embodiment and according to this reality With the overall description of the driving method of the solid state image pickup device of new embodiment
2. embodiment 1 is (according to the image-forming component of embodiment of the present utility model, according to embodiment of the present utility model Cascade type image-forming component, the solid state image pickup device according to the second embodiment of the present utility model)
3. embodiment 2 (variation of embodiment 1)
4. embodiment 3 (variations of Examples 1 and 2)
5. embodiment 4 (embodiment 1-3 variation, has the image-forming component of transmission coordination electrode)
6. embodiment 5 (embodiment 1-4 variation, has the image-forming component of electric charge discharge electrode)
7. embodiment 6 (embodiment 1-5 variation, has the image-forming component of charge storage electrode section)
It is 8. other
(according to the image-forming component of embodiment of the present utility model, the cascade type according to embodiment of the present utility model Image-forming component, according to the solid state image pickup device of the first embodiment of the present utility model or the second embodiment and according to this reality With the overall description of the driving method of the solid state image pickup device of new embodiment)
In image-forming component according to embodiment of the present utility model etc., image-forming component can further comprise semiconductor-based Plate, photoelectric conversion unit may be arranged above semiconductor substrate.Pay attention to, first electrode, charge storage electrode and second electrode connect It is connected to the drive circuit that will be illustrated later.
Second electrode positioned at light incident side can jointly be set relative to multiple image-forming components.In other words, second Electrode is configured to so-called solid electrode.Photoelectric conversion layer can jointly be set relative to multiple image-forming components.Change Sentence is talked about, and one layer of photoelectric conversion layer can be formed relative to multiple image-forming components, or can be relative to each image-forming component And formed.
In addition, above-mentioned various exemplary forms and construction are being included into pixel according to embodiment of the present utility model In part etc., first electrode can be formed as extending to be connected to photoelectric conversion layer in the opening portion for be arranged at insulating barrier.Can Selection of land, photoelectric conversion layer are formed as extending to be connected to first electrode in the opening portion for be arranged at insulating barrier.This In the case of, image-forming component etc. is configurable to have following form：The edges cover of the top surface of first electrode has an insulating barrier, and first Electrode is exposed to the bottom surface of opening portion, and when the surface contacted with the top surface of first electrode that insulating barrier is limited by first surface And when the surface contacted in face of a part for charge storage electrode with photoelectric conversion layer of insulating barrier is limited by second surface, open The side surface of oral area has the slope extended from first surface to second surface.In addition, image-forming component etc. is configurable to have Following form：The side surface of opening portion with the slope extended from first surface to second surface is located at charge storage electrode Side.In addition, above-mentioned form include wherein between photoelectric conversion layer and first electrode formed with another layer of form (for example, Form formed with the material layer stored suitable for electric charge between photoelectric conversion layer and first electrode).
In addition, above-mentioned various exemplary forms and construction are being included into pixel according to embodiment of the present utility model In part etc., image-forming component etc., which can have, to be constructed as below, wherein, image-forming component further comprises：Control unit, the control unit are set It is placed in semiconductor substrate and there is drive circuit, first electrode and charge storage electrode is connected to the drive circuit, in electric charge During storage, from drive circuit by current potential V11Apply to first electrode, by current potential V12Apply to charge storage electrode, so that electric Lotus is stored in photoelectric conversion layer, and during electric charge transmits, from drive circuit by current potential V21Apply to first electrode, by electricity Position V22Apply to charge storage electrode, so that the electric charge being stored in photoelectric conversion layer is read out to control list by first electrode Member.Here, in the case of current potential of the current potential of first electrode higher than second electrode, V12≥V11And V22<V21；Also, first In the case of current potential of the current potential of electrode less than second electrode, V12≤V11And V22>V21。
In addition, above-mentioned various exemplary forms and construction are being included into pixel according to embodiment of the present utility model In part etc., image-forming component etc. is configurable to have following form：Wherein, further comprise that being arranged in first electrode and electric charge deposits Separated between storing up electricity pole and with first electrode and charge storage electrode, and be arranged to and face photoelectric conversion layer across insulating barrier Transmission coordination electrode (charge transmission electrode).Pay attention to, for purposes of illustration only, by having according to embodiment of the present utility model The image-forming component of this form is referred to as " according to the image-forming component with transmission coordination electrode of embodiment of the present utility model Deng ".
In addition, in image-forming component for including transmission coordination electrode according to embodiment of the present utility model etc., it is described Image-forming component etc., which can have, to be constructed as below：Including control unit, the control unit is arranged at semiconductor substrate and with driving Circuit, first electrode, charge storage electrode and transmission coordination electrode are connected to drive circuit.During electric charge stores, from drive Circuit is moved by current potential V11Apply to first electrode, by current potential V12Apply to charge storage electrode, by current potential V13Apply to transmission control Electrode processed, so that electric charge is stored in photoelectric conversion layer.In addition, in during electric charge transmits, from drive circuit by current potential V21Apply First electrode is added to, by current potential V22Apply to charge storage electrode, by current potential V23Apply to transmission coordination electrode, so that storage Electric charge in photoelectric conversion layer is read out to control unit by first electrode.Here, first electrode current potential higher than the In the case of the current potential of two electrodes, V12>V13And V22≤V23≤V21；It is less than the current potential of second electrode in the current potential of first electrode In the case of, V12<V13And V22≥V23≥V21。
In addition, above-mentioned various exemplary forms and construction are being included into pixel according to embodiment of the present utility model In part etc., image-forming component etc. is configurable to have following form：Further comprise being connected to photoelectric conversion layer and be arranged to The electric charge discharge electrode that first electrode and charge storage electrode separate.Pay attention to, for purposes of illustration only, will be according to of the present utility model Image-forming component with this form of embodiment etc. is referred to as " being discharged with electric charge according to embodiment of the present utility model Image-forming component of electrode etc. ".In addition, in the image-forming component for including electric charge discharge electrode according to embodiment of the present utility model In, image-forming component etc. is configurable to have following form：Electric charge discharge electrode is arranged to deposit around first electrode and electric charge Storing up electricity pole (in other words, is arranged) with frame shape.(shared) electric charge discharge electrode can be shared by multiple image-forming components.In addition, In this case, image-forming component can be constructed the following form of layer：Photoelectric conversion layer is in the second opening portion for being arranged at insulating barrier In be extended to connect to electric charge discharge electrode, the edges cover of the top surface of electric charge discharge electrode has an insulating barrier, electric charge discharge electrode It is exposed to the bottom surface of the second opening portion, and when limiting contacting with the top surface of electric charge discharge electrode for insulating barrier by the 3rd surface Surface and the surface contacted with the part for facing charge storage electrode of photoelectric conversion layer that insulating barrier is limited by second surface When, the side surface of the second opening portion has the slope extended from the 3rd surface to second surface.
In addition, in image-forming component for including electric charge discharge electrode according to embodiment of the present utility model etc., imaging Element etc., which can have, to be constructed as below：Further comprise：Control unit, the control unit are arranged at semiconductor substrate and with drives Dynamic circuit, first electrode, charge storage electrode and electric charge discharge electrode are connected to the drive circuit, during electric charge stores, from Drive circuit is by current potential V11Apply to first electrode, by current potential V12Apply to charge storage electrode, by current potential V14Apply to electricity Lotus discharges electrode, so that electric charge is stored in photoelectric conversion layer.Also, during electric charge transmits, from drive circuit by current potential V21 Apply to first electrode, by current potential V22Apply to charge storage electrode, by current potential V24Apply to electric charge and discharge electrode, so as to deposit The electric charge stored up in photoelectric conversion layer is read out to control unit by first electrode.Here, it is higher than in the current potential of first electrode In the case of the current potential of second electrode, V14>V11And V24<V21；It is less than the situation of the current potential of second electrode in the current potential of first electrode Under, V14<V11And V24>V21。
In addition, above-mentioned various exemplary forms and construction are being included into pixel according to embodiment of the present utility model In part etc., image-forming component etc. is configured as form：Charge storage electrode is configured with multiple charge storage electrode sections.Note Meaning, for purposes of illustration only, image-forming component with this form according to embodiment of the present utility model etc. is referred to as " according to this Image-forming component with multiple charge storage electrode sections of the embodiment of utility model etc. ".The quantity of charge storage electrode section It can be two or more.In addition, in the imaging with multiple charge storage electrode sections according to embodiment of the present utility model In element etc., image-forming component etc. is configurable to have following form：It is higher than the current potential of second electrode in the current potential of first electrode In the case of, during electric charge transmits, apply to the electricity of the charge storage electrode section for the opening position for being located most closely to first electrode Current potential of the position higher than the charge storage electrode section of application to the opening position for being located furthest from first electrode.In the current potential of first electrode In the case of current potential less than second electrode, during electric charge transmits, apply to the opening position for being located most closely to first electrode Electricity of the current potential of charge storage electrode section less than the charge storage electrode section of application to the opening position for being located furthest from first electrode Position.
In addition, above-mentioned various exemplary forms and construction are being included into pixel according to embodiment of the present utility model In part etc., image-forming component etc., which can have, to be constructed as below：At least floating diffusion layer and the amplifying transistor of composition control unit is set In semiconductor substrate, and first electrode is connected to the gate portion of floating diffusion layer and amplifying transistor.In this case, enter The reset transistor for forming control unit and selection transistor are arranged at semiconductor substrate by one step, and floating diffusion layer is connected to multiple One regions and source/drain of bit transistor, a regions and source/drain of amplifying transistor are connected to the one of selection transistor Individual regions and source/drain, and another regions and source/drain of selection transistor is connected to signal wire.
In addition, above-mentioned various exemplary forms and construction are being included into pixel according to embodiment of the present utility model In part etc., image-forming component etc. is configurable to have following form：Charge storage electrode is bigger than first electrode.When electric charge stores electricity The area of pole is by S1' represent and first electrode area by S1It is preferably full although being not limited to following relation during expression The following relation of foot： 4≤S1'/S1。
In addition, above-mentioned various exemplary forms and construction are being included into pixel according to embodiment of the present utility model In part etc., image-forming component etc. is configurable to have following form：Light is incident from second electrode side, and in the light of second electrode Light incident side is formed with light shield layer.Alternatively, image-forming component etc. is configurable to have following form：Light enters from second electrode side Penetrate, but light is not incident in first electrode (in some cases, first electrode and transmission coordination electrode).In this case, Image-forming component etc., which can have, to be constructed as below：In first electrode (in some cases, first electrode and transmission coordination electrode) top Light incident side formed with light shield layer as second electrode.Image-forming component etc., which can have, to be constructed as below：In charge storage electrode and Lenticule on piece is set above second electrode, the light being incident on piece on lenticule is collected in charge storage electrode.Light shield layer The light incident side surface of second electrode is may be arranged at, or may be arranged on the light incident side surface of second electrode.Some In the case of, light shield layer may be formed in second electrode.Such as chromium (Cr), copper (Cu), aluminium (Al), tungsten (W) and light tight can be used Resin (such as polyimide resin) as form light shield layer material.
As the image-forming component according to embodiment of the present utility model, specifically, exemplified with to blue-sensitive and wrapping The photoelectric conversion layer for absorbing blue light (wave-length coverage is 425nm to 495nm light) is included (for purposes of illustration only, being referred to as the " first kind Blue photoelectric conversion layer ") image-forming component (for purposes of illustration only, be referred to as " first kind blueness image-forming component "), to green sensitive And including absorbing the photoelectric conversion layer of green light (wave-length coverage be 495nm to 570nm light) (" for purposes of illustration only, be referred to as One type green light electricity conversion layer ") image-forming component (for purposes of illustration only, be referred to as " first kind green image-forming component ") and right Red sensitive and including absorbing the photoelectric conversion layer of red light (wave-length coverage be 620nm to 750nm light) (for ease of saying Bright, be referred to as " first kind red photoelectric conversion layer ") image-forming component (for purposes of illustration only, being referred to as that " first kind red is into pixel Part ").In addition, as in the prior art without the image-forming component of charge storage electrode, for purposes of illustration only, by blue-sensitive Image-forming component is referred to as " Second Type blueness image-forming component "；For purposes of illustration only, " second will be referred to as to the image-forming component of green sensitive Type green image-forming component "；For purposes of illustration only, will be referred to as that " Second Type red is into pixel to the image-forming component of red sensitive Part "；For purposes of illustration only, the photoelectric conversion layer for forming Second Type blueness image-forming component is referred to as " Second Type blueness photoelectricity turn Change layer "；For purposes of illustration only, the photoelectric conversion layer for forming Second Type green image-forming component is referred to as " Second Type green photoelectricity Conversion layer "；And referred to as " Second Type is red for purposes of illustration only, by the photoelectric conversion layer of composition Second Type red image-forming component Color photoelectric conversion layer ".
Included according to the cascade type image-forming component of embodiment of the present utility model according to embodiment of the present utility model At least one image-forming component (photo-electric conversion element).That is, cascade type image-forming component may include but be not limited to it is following Non-limiting configuration and structure.
[A] configuration and structure
First kind blueness photoelectric conversion unit, first kind green photoelectric conversion unit and first kind red photoelectricity turn Unit is changed vertically to be laminated, and for first kind blueness image-forming component, first kind green image-forming component and first Each control unit of type red image-forming component is arranged in semiconductor substrate.
[B] configuration and structure
First kind blueness photoelectric conversion unit and first kind green photoelectric conversion unit are vertically laminated, and second Type red photoelectric conversion layer is arranged in below this two layers first kind photoelectric conversion unit, and for first kind blueness into Each control unit of element, first kind green image-forming component and Second Type red image-forming component is arranged on semiconductor-based In plate.
[C] configuration and structure
Second Type blueness photoelectric conversion unit and Second Type red photoelectric conversion unit are arranged in first kind green Below photoelectric conversion unit, and it is used for first kind green image-forming component, Second Type blueness image-forming component and Second Type Each control unit of red image-forming component is arranged in semiconductor substrate.
[D] configuration and structure
Second Type green photoelectric conversion unit and Second Type red photoelectric conversion unit are arranged in first kind blueness Below photoelectric conversion unit, and it is used for first kind blueness image-forming component, Second Type green image-forming component and Second Type Each control unit of red image-forming component is arranged in semiconductor substrate.Pay attention to, it is preferable that the opto-electronic conversion list of image-forming component Member in vertical direction put in order for from light incident direction blue photoelectric conversion unit, green photoelectric conversion unit and The order of red photoelectric conversion unit, or be green photoelectric conversion unit, blue photoelectric conversion unit from light incident direction And the order of red photoelectric conversion unit.Because the light with shorter wavelength is more effectively inhaled in incidence surface side Receive.It is preferably red because among these three color of light, the wavelength of red light is most long, therefore when from light incident surface Photoelectric conversion unit is located at orlop.A pixel is configured with the cascade type structure of image-forming component.It may also include the first kind Type infrared ray photoelectric converting unit.Here it is preferred that turned using such as organic material to construct first kind infrared ray photoelectric The photoelectric conversion layer of unit is changed, and the photoelectric conversion layer is located at the orlop of the cascade type structure of first kind image-forming component, And it is arranged in above Second Type image-forming component.In addition, it may further comprise second below first kind photoelectric conversion unit Type infrared ray photoelectric converting unit.
In first kind image-forming component, for example, forming first on the interlayer insulating film set on a semiconductor substrate Electrode.The image-forming component formed in semiconductor substrate is configurable to back-illuminated type image-forming component or preceding illuminated image-forming component.
In the case of photoelectric conversion layer is made of the organic material, photoelectric conversion layer is formed as following non-restrictive form Any of：
(1) photoelectric conversion layer is constructed by p-type organic semiconductor；
(2) photoelectric conversion layer is constructed by n-type organic semiconductor；
(3) photoelectric conversion layer by p-type organic semiconductor layer/n-type organic semiconductor layer cascade type structure construction (for example, Photoelectric conversion layer by p-type organic semiconductor layer/p-type organic semiconductor and n-type organic semi-conductor mixed layer (bulk heterojunction structure)/ The cascade type structure construction of n-type organic semiconductor layer.Photoelectric conversion layer is by p-type organic semiconductor layer/p-type organic semiconductor and n The cascade type structure construction of type organic semi-conductor mixed layer (bulk heterojunction structure).Photoelectric conversion layer by n-type organic semiconductor layer/ P-type organic semiconductor and the cascade type structure of n-type organic semi-conductor mixed layer (bulk heterojunction structure) construction).
(4) photoelectric conversion layer is constructed by p-type organic semiconductor and n-type organic semi-conductor mixed layer (bulk heterojunction structure).
Here, lamination order can arbitrarily be changed.
For p-type organic semiconductor, the one or more in following non-limiting material can be used：Naphthalene derivatives, anthracene spread out Biology, phenanthrene derivative, pyrene derivatives, derivative, aphthacene derivative, pentacene derivative, quinacridone derivative, thiophene Simultaneously benzothiophene derivative, triallylamine spread out for derivative, thienothiophene derivative, benzothiophene derivative, benzothiophene Biology, carbazole derivates, Pi derivative, bend derivative, fluoranthene derivative, phthalocyanine derivates, sub- phthalocyanine derivates, sub- porphyrazine (subporphyrazine) derivative, there is the metal complex of heterocyclic compound as part, polythiofuran derivative, gather Diazosulfide derivative, polyfluorene derivative etc..For n-type organic semiconductor, one in following non-limiting material can be used Kind is a variety of：Fullerene and fullerene derivate are (for example, such as C60, C70, C74 etc. fullerene (higher fullerenes), embedded Type fullerene etc. or fullerene derivate (such as fullerene fluoride, PCBM fullerene compounds, fullerene polymer etc.)), The organic semiconductor and transparent inorganic metal oxide of HOMO and LUMO with than p-type organic semiconductor bigger (deeper) Deng.The one or more that n-type organic semiconductor includes but is not limited in following material：With the part as molecular skeleton The organic molecule or metal-organic complex of heterocyclic compound containing nitrogen-atoms, oxygen atom or sulphur atom, for example, pyridine derived Thing, pyrazines derivatives, pyrimidine derivatives, pyrrolotriazine derivatives, quinoline, quinoxaline derivant, isoquinilone derivatives, acridine Derivative, phenazene derivative, phenanthroline derivative, terazole derivatives, pyrazole derivatives, imdazole derivatives, thiazole, evil Zole derivatives, benzimidizole derivatives, benzotriazole derivatives, benzoxazoles derivative, carbazole derivates, benzofuran derive Thing, dibenzofuran derivative, sub- seaweed oxazine derivatives, polystyrene derivative, poly- diazosulfide derivative, polyfluorene derive Thing etc. and sub- phthalocyanine derivates etc..Contained group etc. can include but is not limited in following material in fullerene derivate It is one or more：Halogen atom；Straight chain, side chain or cyclic alkyl or phenyl；Group with straight chain or condensed ring aromatic compound； Group with halide；Part fluoroalkyl；Perfluoroalkyl；Silyl alkyl；Silicyl alkoxy；Arylsilyl Base；Sulfur alkyl aryl；Alkyl alkylthio base；Aryl sulfonyl；Alkyl sulphonyl；Artyl sulfo；Alkyl sulfenyl；Amino；Alkyl ammonia Base；Arylamino；Hydroxyl；Alkoxy；Acylamino-；Acyloxy；Carbonyl；Carboxyl；Carboxymethyl group amide groups (carboxymethyl kiso amide groups)；Carbon alkoxy；Acyl group；Sulfonyl；Cyano group；Nitro；Group with chalcogenide；Phosphino-；Phosphine Acid esters group；And their derivative.The photoelectric conversion layer constructed by organic material (in some cases, is referred to as " organic Photoelectric conversion layer ") thickness may include but be not limited to following non-limiting scope：1×10-8M to 5 × 10-7M scope, preferably Ground 2.5 × 10-8M to 3 × 10-7M scope, it is highly preferred that 2.5 × 10-8M to 2 × 10-7M scope, it is further preferred that 1 ×10-7M to 1.8 × 10-7M scope.Pay attention to, in many cases, organic semiconductor is divided into p-type and n-type.Here, p-type Expression is easy to transporting holes, and n-type represents to be easy to transmit electronics.Explain to the above-mentioned type property of should not be so limited.
Form for green wavelength light carry out opto-electronic conversion organic photoelectric conversion layer material may include but The one or more being not limited in following component：Dyestuff based on rhodamine, the dyestuff based on merocyanine, quinacridone derive Thing, sub- phthalocyanine dye (sub- phthalocyanine derivates) etc..Form organic light for carrying out opto-electronic conversion to the light with blue wavelength The material of electric conversion layer may include but be not limited to following component one or more：Cumarin acid dye, three -8-hydroxyquinoline Aluminium (Alq3), dyestuff based on merocyanine etc..Form the organic photoelectric for carrying out opto-electronic conversion to the light with red wavelength The one or more that the material of conversion layer may include but be not limited in following component：(sub- phthalocyanine spreads out for phthalocyanine dye, sub- phthalocyanine dye Biology) etc..
The one or more that the inorganic material of photoelectric conversion layer may include but be not limited in following compound semiconductor：Crystal Silicon, non-crystalline silicon, microcrystal silicon, crystallize selenium, amorphous selenium, such as CIGS (CuInGaSe), CIS (CuInSe2)、CuInS2、CuAlS2、 CuAlSe2、CuGaS2、CuGaSe2、AgAlS2、 AgAlSe2、AgInS2Or AgInSe2Deng chalcopyrite based compound, such as GaAs, InP, AlGaAs, InGaP, AlGaInP etc. III-V, or InGaAsP, CdSe, CdS, In2Se3、 In2S3、Bi2Se3、Bi2S3, ZnSe, ZnS, PbSe and PbS.Quantum dot can be used for opto-electronic conversion made of these materials Layer.
Alternatively, photoelectric conversion layer is configurable to have lower semiconductor layer and the stepped construction of upper semiconductor layer.So, By setting lower semiconductor layer, it can prevent from coupling again during electric charge stores, photoelectric conversion layer is stored in so as to improve In electric charge to the efficiency of transmission of first electrode, and can suppress dark current occur.Forming the material of Upper photoelectric conversion layer can fit Locality is selected from the various materials for forming above-mentioned photoelectric conversion layer.On the other hand, it is preferable that the material for forming lower semiconductor layer Material, the mobility of the material of photoelectric conversion layer is formed using band gap magnitude big (for example, band gap magnitude is more than 3.0eV) and mobility ratio High material.Specifically, the non-limiting example of the material may include the one or more in following material：Such as IGZO's Oxide semiconductor material；Transient metal chalcogenide chalcogenide；Carborundum；Diamond；Graphene；CNT；And condensation is more Organic semiconducting materials that cyclic hydrocarbon compound, condensed heterocyclic compouds form etc..Material for forming lower semiconductor layer, In the case that the electric charge of storage is electronics, examples material includes but is not limited to material of the ionization potential than forming photoelectric conversion layer The high material of ionization potential；In the case where the electric charge to be stored is hole, examples material includes but is not limited to electron affinity The material smaller than the electron affinity of the material of composition photoelectric conversion layer.Preferably, the impurity of the material of lower semiconductor layer is formed Concentration is 1 × 1018cm-3It is or smaller.Lower semiconductor layer can have monolayer constructions or can be multi-ply construction.In addition, it can incite somebody to action Form the material of the lower semiconductor layer above charge storage electrode and form the lower semiconductor layer above first electrode Material be configured to it is different from each other.
According to the solid state image pickup device of the first embodiment of the present utility model or the second embodiment, veneer coloured silk can be constructed Color solid state image pickup device.
In the solid state image pickup device with cascade type image-forming component according to the second embodiment of the present utility model, with Solid state image pickup device with the image-forming component arranged with Bayer array is different (in other words, to carry out blueness without using colour filter The spectrum separation of light, green light and red light), by being laminated in same pixel along light incident direction to polytype The image-forming component of the photaesthesia of wavelength constructs a pixel, close so as to improve the sensitivity of per unit volume and pixel Degree.Further, since organic material has high absorption coefficient, therefore organic photoelectric conversion layer can be configured to have than existing skill The smaller thickness of the Si base photoelectric conversion layers of art, and reduce the light leakage from adjacent pixel or reduce to angle of light The limitation of degree.In addition, in the Si base image-forming components of prior art, interpolation processing is carried out between three colored pixels, so as to There is pseudo color coding hologram to produce color signal.However, cascade type imaging is had according to the second embodiment of the present utility model In the solid state image pickup device of element, it can suppress pseudo color coding hologram occur.Because organic photoelectric conversion layer has the function of colour filter in itself, Therefore color separation can be realized in the case where not arranging colour filter.
On the other hand, in the solid state image pickup device using colour filter according to the first embodiment of the present utility model, The requirement to the spectrum stalling characteristic of blue light, green light and red light can be mitigated, and high production rate can be realized.In root Array according to the image-forming component in the solid state image pickup device of the first embodiment of the present utility model includes but is not limited to following battle array One or more in row：Bayer array, in the ranks arrangement, G striped RB grids array, the complete grid arrays of G stripeds RB, grid are mutual Mend color array, striped array, diagonal stripes arrangement, former chrominance arrays, field aberration order array, frame aberration order array, MOS Type array, improved MOS type array, frame intertexture array and field intertexture array.Here, a pixel (or sub-pixel) by one into Element is formed.
It is disposed with according to multiple image-forming components of embodiment of the present utility model and according to embodiment party of the present utility model The pixel region of multiple cascade type image-forming components of case is made up of the multiple pixels arranged with two-dimensional array regular shape.Generally, Pixel region is configurable to include effective pixel area and black benchmark pixel region, wherein, effective pixel area is actual to receive light, Amplification reads into drive circuit by the signal charge of opto-electronic conversion generation and by the signal charge, and black benchmark pixel region Export black as the optics of the benchmark of black level.Generally, black benchmark pixel region is arranged at the periphery of effective pixel area.
In image-forming component for including above-mentioned various exemplary forms and construction according to embodiment of the present utility model etc. In, use up and it is irradiated, and opto-electronic conversion occurs in photoelectric conversion layer, so as to which hole and electronics are separated and are used as current-carrying Son.Then, it is anode by the electrode definition in extraction hole, the electrode definition by extraction electronics is negative electrode.First electrode structure be present Into the form of anode and second electrode composition negative electrode.Conversely, there is also first electrode to form negative electrode and second electrode composition anode Form.
In the case where forming cascade type image-forming component, first electrode, charge storage electrode, transmission coordination electrode, electric charge Discharge electrode and second electrode are configurable to be made up of transparent conductive material.Pay attention to, in some cases, by first electrode, Charge storage electrode, transmission coordination electrode and electric charge discharge electrode are referred to as " first electrode etc. ".Alternatively, according to this practicality In the case that the image-forming component of new embodiment is arranged in the planes with such as Bayer array, second electrode is configurable to It is made up of transparent conductive material, and first electrode is configurable to be made up of metal material.In this case, specifically, Second electrode at light incident side is configurable to be made up of transparent conductive material, and first electrode etc. is configurable to by example As Al-Nd (alloy of aluminium and neodymium) or ASC (alloy of aluminium, samarium and copper) are made.Pay attention to, in some cases, will be led by transparent Electrode made of electric material is referred to as " transparency electrode ".The band-gap energy of transparent conductive material is 2.5eV, more preferably 3.1eV with On.Transparent conductive material for forming transparency electrode, can be exemplary conducting metal oxide.Conductive oxide can wrap The one or more for including but being not limited in following material：(ITO, Sn adulterate In for indium oxide, indium tin oxide2O3, including crystallization ITO and amorphous ITO), by using indium as dopant be added in zinc oxide and formed indium-zinc oxide (IZO), pass through Indium is added to gallium oxide as dopant and formed gallium indium oxide (IGO), added by regarding indium and gallium as dopant Oxide indium gallium zinc (IGZO, the In-GaZnO formed into zinc oxide4), by regarding tin as dopant be added to oxidation (F adulterates In to indium tin zinc oxide (ITZO), the IFO formed in zinc2O3), tin oxide (SnO2), ATO (Sb adulterate SnO2)、FTO (F adulterates SnO2), zinc oxide (including ZnO doped with other elements), by regarding aluminium as dopant be added to zinc oxide In and formed aluminium zinc oxide (AZO), by using gallium as dopant be added in zinc oxide and formation gallium zinc oxide (GZO), titanium oxide (TiO2), by using niobium as dopant be added in titanium oxide and formed niobium titanium oxide (TNO), Sb oxide, spinel oxides and there is YbFe2O4The oxide of structure.Alternately, gallium oxide, oxygen will can be used Change one or more in titanium, niobium oxide, nickel oxide etc. as the transparency electrode of mother layer as example.For the thickness of transparency electrode Degree, the example of non-limiting scope can be 2 × 10-8M to 2 × 10-7M, it is preferable that can be 3 × 10-8M to 1 × 10-7M's Scope.In the case where first electrode needs transparency, from the perspective of manufacturing process is simplified, it is preferable that electric charge discharge electricity Pole is also made up of transparent conductive material.
In the case where not needing transparency, it is preferable that form the positive electrode for the electrode for playing a part of discharging hole Conductive material is the conductive material for having high work function (for example, φ=4.5eV to 5.5eV).Specifically, the conductive material The one or more that may include but be not limited in following material：Golden (Au), silver-colored (Ag), chromium (Cr), nickel (Ni), palladium (Pd), platinum (Pt), iron (Fe), iridium (Ir), germanium (Ge), osmium (Os), rhenium (Re) or tellurium (Te).On the other hand, it is preferable that composition plays discharge The conductive material of the negative electrode of the effect of the electrode of electronics is that have leading for low work function (for example, φ=3.5eV to 4.5eV) Electric material.Specifically, the one or more that the conductive material may include but be not limited in following material：Alkali metal (such as Li, Na or K etc.) and its fluoride or oxide, alkaline-earth metal (such as Mg, Ca etc.) and its fluoride or oxide, aluminium (Al), zinc (Zn), rare earth metal or their conjunction such as tin (Sn), thallium (Tl), Na-K alloy, aluminium lithium alloy, magnesium silver alloy, indium, ytterbium Gold.The material for forming male or female includes but is not limited to one or more of：Such as platinum (Pt), golden (Au), palladium (Pd), chromium (Cr), nickel (Ni), aluminium (Al), silver-colored (Ag), tantalum (Ta), tungsten (W), copper (Cu), titanium (Ti), indium (In), tin (Sn), iron (Fe), cobalt (Co) and metal, the alloy containing these metallic atoms such as molybdenum (Mo), made of these metals conducting particles, contain these gold The conducting particles of the alloy of category or such as polysilicon comprising impurity, carbon-based material, oxide semiconductor, CNT and stone The conductive materials such as black alkene, and the cascade type structure of the multilayer comprising these atoms can be used.In addition, form male or female The one or more that include but is not limited in following material of material：Such as poly- (3,4- ethyldioxythiophenes)/polystyrene The organic material (conducting polymer) of sulfonic acid [PEDOT/PSS] etc..Furthermore, it is possible to will be by making conductive material (poly- with adhesive Compound) mixing and the paste or the curing materials of ink that obtain are used as electrode.
On first electrode etc. or the film forming method of second electrode (male or female), dry or wet can be used. The example of dry method includes but is not limited to：Physical vapour deposition (PVD) (physical vapor deposition, PVD) method and chemical gas Mutually deposition (chemical vapor deposition, CVD) method.Use the example of the film forming method of the principle of PVD methods Including but not limited to：Use resistance heating or the vaccum gas phase sedimentation method of high-frequency heating, electron beam (electron beam, EB) Vapour deposition process, various sputtering methods (magnetron sputtering method, RF-DC coupled mode bias sputterings method, ECR sputtering methods, in face of target sputtering method And high-frequency sputtering), ion plating method, laser ablation method, molecular beam epitaxy and laser transfer method.In addition, the example of CVD method Including but not limited to：Organic (MO) CVD of plasma CVD method, thermal cvd, metal and optical cvd method.On the other hand, wet method Example include but is not limited to：Galvanoplastic or electroless plating method, spin-coating method, ink-jet method, spraying process, impression method, micro-contact-printing, Flexographic plate print process, flexographic printing process, woodburytype and infusion process etc..The example of patterning method includes but is not limited to：It is all Such as chemical etching of shadow mask (shadow mask), laser transfer use ultraviolet light, the photoetching of laser and physical etch etc.. The planarization of first electrode etc. or second electrode can include but is not limited to：Laser planarization method, circumfluence method, chemical machine Tool polishing (chemical mechanical polishing, CMP) method etc..
Insulating barrier may include non-limiting material below one or more：Except such as material based on silica, nitridation Silicon (SiNY) and aluminum oxide (Al2O3) etc. outside the inorganic insulating material of metal oxide high dielectric insulation material, can also be Such as polymethyl methacrylate (PMMA)；Polyvinylphenol (PVP)；Polyvinyl alcohol (PVA)；Polyimides；Makrolon (PC)；Polyethylene terephthalate (PET)；Polystyrene；Silane 01 derivatives (such as N-2 (amino-ethyl) 3- amino Propyl trimethoxy silicane (AEAPTMS), 3-mercaptopropyi trimethoxy silane (MPTMS) or octadecyl trichlorosilane alkane Etc. (OTS) silane coupler)；Novolac type phenolic resin；Fluorine resin；Such as such as octadecanethiol or dodecyl are different Cyanate etc. has the organic insulations such as the straight-chain hydrocarbons of functional group that can be combined with coordination electrode (organic poly- in its one end Compound)；And combinations thereof can be used.Pay attention to, for silica based materials, non-limiting example includes but is not limited to：Oxygen SiClx (SiOX), BPSG, PSG, BSG, AsSG, PbSG, silicon oxynitride (SiON), SOG (spin-coating glass) and low-k material Material is (for example, polyaryl ether (polyaryl ether), ring perfluorocarbon polymer and benzocyclobutene, ring-type fluororesin, polytetrafluoro Ethene, aryl ether fluoride, polyimides fluoride, amorphous carbon and organic SOG).Form various interlayer insulating films or insulation The material of film can also be appropriately selected from above-mentioned material.
Floating diffusion layer, the construction and knot for forming the amplifying transistor of control unit, reset transistor and selection transistor Structure can be formed like the structure of floating diffusion layer of the prior art, amplifying transistor, reset transistor and selection transistor Make and structure.Drive circuit can also be formed with known configuration and structure.
First electrode is connected to the gate portion of floating diffusion layer and amplifying transistor, it is therefore desirable for formed contact hole portion with The connection between connection and first electrode and the gate portion of amplifying transistor between first electrode and floating diffusion layer.Structure The one or more that can include but is not limited in following material into the material of contact hole portion：It is polysilicon doped with impurity, all Such as tungsten, Ti, Pt, Pd, Cu, TiW, TiN, TiNW, WSi2And MoSi2Deng refractory metal or metal silicide, and can be with Use the cascade type structure (for example, Ti/TiN/W) of the multilayer made of these materials.
First carrier barrier layer may be provided between organic photoelectric conversion layer and first electrode, the second carrier barrier layer It may be provided between organic photoelectric conversion layer and second electrode.In addition, the first electric charge injection layer may be provided at the resistance of the first carrier Between barrier and first electrode, and the second electric charge injection layer may be provided between the second carrier barrier layer and second electrode. Form the one or more that the material of electrode injection layer may include but be not limited in following material：Such as lithium (Li), sodium (Na) and The alkaline-earth metal and its fluoride of the alkali metal and its fluoride and oxide of potassium (K) etc., magnesium (Mg) and calcium (Ca) etc. and Oxide.
The one or more that method for forming various organic layers can include but is not limited in following methods：Dry film shape Into method and wet film formation process.Dry film forms the one or more that the example of method includes but is not limited in following methods：Resistance heating Or high-frequency heating method, the vaccum gas phase sedimentation method heated using electron beam, the anxious vapour deposition process of sudden strain of a muscle, plasma gas phase deposition Method, EB vapour deposition processes, (2 pole sputtering methods, DC sputtering methods, DC magnetron sputtering methods, high-frequency sputtering, magnetic control splash various sputtering methods Penetrate method, RF-DC coupled mode bias sputterings method, ECR sputtering methods, in face of target sputtering method, high-frequency sputtering and ion beam sputtering), it is straight (DC) method of stream, RF methods, more cathode methods, priming reaction method, such as electric field vapour deposition method, high frequency ion electroplating method and reactive ion plating side The various ion electroplating methods such as method, laser ablation method, molecular beam epitaxy, laser transfer method and molecular beam epitaxy (molecular Beam epitaxy, MBE) method.In addition, the example of CVD method includes but is not limited to：Plasma CVD method, thermal cvd, Mocvd method and optical cvd method.On the other hand, the example of wet method includes but is not limited to：Spin-coating method；Infusion process；Casting；Micro- contact Print process；Droplet casting method；Silk screen print method, ink jet printing method, flexographic printing process, woodburytype and flexographic plate print process etc. Various printing processes；Pressing；Spray-on process；And such as air knife coating method, blade coating method, stick coating method, scraper for coating method, squeeze Rubbing method, reverse roll coating method, transfer roll rubbing method, gravure coating process are pressed, touches rubbing method, casting coating, spraying process, gap nozzle The rubbing method of rubbing method, grid rubbing method etc..Pay attention to, in rubbing method, solvent includes but is not limited to：Such as toluene, chloroform, oneself The organic solvent low without polarity or polarity of alkane etc., and ethanol can be used.The example of patterning method is included but not The one or more being limited in following methods：The chemical etching of shadow mask etc., laser transfer use ultraviolet light, the light of laser Quarter and physical etch etc..The one kind or more included but is not limited to for the planarization of all kinds organic layer in following methods Kind：Laser planarization method, reflow method etc..
As described above, in image-forming component or solid state image pickup device, lenticule or light shield layer on piece are set if necessary, and It is provided for driving the drive circuit or distribution of image-forming component.If necessary, can be provided for controlling light to be incident to image-forming component Shutter, and solid state image pickup device can be according to its purpose and including optical cutoff filter.
, can will be formed with reading for example, in stacking solid state image pickup device and in the case of reading integrated circuit (ROIC) The integrated circuit and driving substrate of connecting portion and the image-forming component formed with connecting portion overlap each other made of copper (Cu), so as to Each connecting portion is contacted with each other, then, is laminated by being bonded the connecting portion.Alternatively, solder projection can be used It is bonded mutually Deng by connecting portion.
Embodiment 1
Embodiment 1 is related to the image-forming component according to embodiment of the present utility model, according to embodiment party of the present utility model The cascade type image-forming component of case and the solid state image pickup device according to the second embodiment of the present utility model.
Figure 1A shows the schematic partial cross section of the image-forming component of embodiment 1 and a part for cascade type image-forming component Figure.Fig. 2 and Fig. 3 shows the image-forming component of embodiment 1 and the equivalent circuit diagram of cascade type image-forming component.Fig. 4 shows composition The schematic layout of the first electrode and charge storage electrode of the image-forming component of embodiment 1 and the transistor of composition control unit Figure.Fig. 5 shows the potential state of interior each part during the operation of the image-forming component of embodiment 1.In addition, Fig. 6 shows structure Into the first electrode of the image-forming component of embodiment 1 and the schematic layout figure of charge storage electrode.Fig. 7 shows composition embodiment First electrode, charge storage electrode, second electrode and the schematic perspective view for contacting hole portion of 1 image-forming component.Fig. 8 is shown The concept map of the solid state image pickup device of embodiment 1.
The image-forming component (for example, later by the green image-forming component of explanation) of embodiment 1, which is configurable to include, passes through stacking First electrode 11, photoelectric conversion layer 15 and second electrode 16 and formed photoelectric conversion unit.Photoelectric conversion unit is configured to Including charge storage electrode 12, the charge storage electrode is arranged to be separated and is arranged to face photoelectricity with first electrode 11 Conversion layer 15, and inserted with insulating barrier 82 between charge storage electrode 12 and photoelectric conversion layer 15.
As shown in Figure 1B-Fig. 1 D, insulating barrier 82 may include multilayer 82E and 82F.For example, there may be insulating materials 82 First area between charge storage electrode 12 and photoelectric conversion layer 15, also may be present being deposited positioned at electric charge for insulating materials 82 Second area between storing up electricity pole 12 and first electrode 11.In certain embodiments, the second area of insulating materials includes containing First insulating barrier 82E of insulating materials and the second insulating barrier 82F containing insulating materials, and the first insulating materials 82F is layered in On second insulating materials 82E.Figure 1B-Fig. 1 D further illustrate about insulating barrier 82 various constructions (for example, layer 82E and 82F construction changes).
In addition, the cascade type image-forming component of embodiment 1 includes the image-forming component of at least one embodiment 1.In embodiment 1 In, cascade type image-forming component includes an image-forming component of embodiment 1.
In addition, the solid state image pickup device of embodiment 1 includes multiple cascade type image-forming components of embodiment 1.
In addition, the image-forming component further comprises semiconductor substrate (more specifically, silicon semiconductor layer) 70, and photoelectricity Converting unit is arranged in the top of semiconductor substrate 70.In addition, further comprising control unit, described control unit, which is arranged on, partly to be led In structure base board 70 and with the drive circuit for being connected to first electrode 11.Here, the light incident side of semiconductor substrate 70 is set For " on a semiconductor substrate side ", and the opposite side of semiconductor substrate 70 is set as " below semiconductor substrate ".By more The wiring layer 62 of distribution construction is arranged on the lower section of semiconductor substrate 70.Semiconductor substrate 70 is at least provided with floating diffusion layer FD1 With the amplifying transistor TR1 for forming control unitamp, first electrode 11 is connected to floating diffusion layer FD1And amplifying transistor TR1ampGate portion.Semiconductor substrate 70 is further provided with forming the reset transistor TR1 of control unitrstIt is brilliant with selection Body pipe TR1sel.Floating diffusion layer FD1It is connected to reset transistor TR1rstA regions and source/drain, amplifying transistor TR1ampA regions and source/drain be connected to selection transistor TR1selA regions and source/drain, and select crystalline substance Body pipe TR1selAnother regions and source/drain be connected to signal wire VSL1.Amplifying transistor TR1amp, reset transistor TR1rstAnd selection transistor TR1selForm drive circuit.
Specifically, the image-forming component of embodiment 1 and cascade type image-forming component are that back-illuminated type image-forming component and back-illuminated type are laminated Type image-forming component, and include the cascade type structure of following three kinds of image-forming components：To green sensitive and including absorbing the of green light The first kind green image-forming component of the embodiment 1 of one type green light electricity conversion layer (hereinafter, is referred to as " the first imaging Element "), to blue-sensitive and including absorb blue light Second Type blueness photoelectric conversion layer prior art Second Type Blue image-forming component (hereinafter, being referred to as " the second image-forming component ") and to red sensitive and including absorbing the of red light The Second Type red image-forming component of the prior art of two type red photoelectric conversion layers (hereinafter, is referred to as " the 3rd imaging Element ").Red image-forming component (the 3rd image-forming component) and blue image-forming component (the second image-forming component) are arranged on semiconductor substrate In 70, and the second image-forming component than the 3rd image-forming component closer to light incident side.In addition, green image-forming component (the first imaging Element) it is arranged on above blue image-forming component (the second image-forming component).One pixel be configured to the first image-forming component, the second one-tenth The cascade type structure of element and the 3rd image-forming component.It is not provided with colour filter.
In the first image-forming component, first electrode 11 and charge storage electrode 12 are formed in interlayer insulating film disconnected from each otherly On 81.Interlayer insulating film 81 and charge storage electrode 12 are covered with insulating barrier 82.Photoelectric conversion layer 15 is formed in insulating barrier 82 On, second electrode 16 is formed on photoelectric conversion layer 15.Protective layer 83 is formed in the whole surface including second electrode 16, And lenticule on piece 90 is arranged on protective layer 83.First electrode 11, charge storage electrode 12 and second electrode 16 are by for example Transparency electrode constructs made of ITO.Photoelectric conversion layer 15 is by including the known organic photoelectric conversion material (example to green sensitive Such as, such as, but not limited to organic material such as the dyestuff based on rhodamine, the dyestuff based on merocyanine, quinacridone) layer form. In addition, photoelectric conversion layer 15 can also have the material layer for including being suitable to electric charge storage.In other words, the material suitable for electric charge storage Layer may be formed between photoelectric conversion layer 15 and first electrode 11 (for example, being formed in connecting portion 67).Interlayer insulating film 81, absolutely Edge layer 82 and protective layer 83 are by known insulating materials (for example, SiO2Or SiN) construction.Photoelectric conversion layer 15 and first electrode 11 are logical Cross and be arranged at the connecting portion 67 of insulating barrier 82 and interconnect.Photoelectric conversion layer 15 extends in connecting portion 67.In other words, photoelectricity Conversion layer 15 extends to be connected with first electrode 11 in the opening portion 84 for be arranged at insulating barrier 82.
Charge storage electrode 12 is connected to drive circuit.Specifically, charge storage electrode 12 is by being arranged on layer insulation Connecting hole 66, welding disk 64 and distribution V in layer 81OAIt is connected to the vertical drive circuit 112 for forming driver element.
Charge storage electrode 12 is bigger than first electrode 11.When the area of charge storage electrode 12 is by S1' represent and first electricity The area of pole 11 is by S1During expression, although being not limited to following relation, preferably meet 4≤S1'/S1, and in embodiment 1, although being not limited to following relation, set it to S1'/S1=8.
Element isolation zone 71 is formed to be formed in first surface (preceding surface) 70A sides of semiconductor substrate 70, oxide-film 72 On the first surface 70A of semiconductor substrate 70.In addition, the first surface side of semiconductor substrate 70 is provided with the imaging of composition first The reset transistor TR1 of the control unit of elementrst, amplifying transistor TR1ampWith selection transistor TR1sel, and further It is provided with the first floating diffusion layer FD1。
Reset transistor TR1rstBy gate portion 51, channel formation region 51A and regions and source/drain 51B and 51C structure Make.Reset transistor TR1rstGate portion 51 be connected to reset line RST1, reset transistor TR1rstA source/drain regions Domain 51C also serves as the first floating diffusion layer FD1, and its another regions and source/drain 51B is connected to power supply VDD。
First electrode 11 by the connecting hole 65 and welding disk 63 that are arranged in interlayer insulating film 81, be arranged at it is semiconductor-based The contact hole portion 61 of plate 70 and interlayer insulating film 76 and the wiring layer 62 formed in interlayer insulating film 76 are connected to a source Pole/drain region 51C (the first floating diffusion layer FD1)。
Amplifying transistor TR1ampIt is made up of gate portion 52, channel formation region 52A and regions and source/drain 52B and 52C. Gate portion 52 is connected to first electrode 11 and reset transistor TR1 by wiring layer 62rstA regions and source/drain 51C (the first floating diffusion layer FD1).In addition, a regions and source/drain 52B is with forming reset transistor TR1rstAnother source Pole/mutual the shared regions of drain region 51B, and it is connected to power supply VDD。
Amplifying transistor TR1selBy gate portion 53, channel formation region 53A and regions and source/drain 53B and 53C structure Make.Gate portion 53 is connected to selection line SEL1.In addition, a regions and source/drain 53B is with forming amplifying transistor TR1amp's The mutual shared regions of another regions and source/drain 52C, and another regions and source/drain 53C is connected to signal wire (number According to output line) VSL1 (117)。
Second image-forming component includes being arranged at the n-type semiconductor region 41 of semiconductor substrate 70 as photoelectric conversion layer.By The transmission transistor TR2 of vertical-type transistor configurationstrsGate portion 45 extend to n-type semiconductor region 41 and be connected to transmission Gate line TG2.In addition, the second floating diffusion layer FD2Be arranged at semiconductor substrate 70 is located at transmission transistor TR2trsGrid Region 45C near portion 45.The electric charge in n-type semiconductor region 41 is stored in via the transmission channel formed along gate portion 45 It is read out to the second floating diffusion layer FD2。
In the second image-forming component, it is further provided with forming the second imaging in the first surface side of semiconductor substrate 70 The reset transistor TR2 of the control unit of elementrst, amplifying transistor TR2ampWith selection transistor TR2sel。
Reset transistor TR2rstIt is made up of gate portion, channel formation region and regions and source/drain.Reset transistor TR2rstGate portion be connected to reset line RST2, reset transistor TR2rstA regions and source/drain be connected to power supply VDD, And its another regions and source/drain is used as the second floating diffusion layer FD2。
Amplifying transistor TR2ampIt is made up of gate portion, channel formation region and regions and source/drain.The amplifying transistor Gate portion be connected to reset transistor TR2rstAnother regions and source/drain (the second floating diffusion layer FD2).In addition, One regions and source/drain of the amplifying transistor is with forming TR2rstAnother regions and source/drain shared region, and even It is connected to power supply VDD。
Selection transistor TR2selConstructed by gate portion, channel formation region and regions and source/drain.Its gate portion connects To selection line SEL2.In addition, a regions and source/drain of the selection transistor is with forming amplifying transistor TR2ampIt is another Individual regions and source/drain shared region, and its another regions and source/drain is connected to signal wire (DOL Data Output Line) VSL2。
3rd image-forming component includes being arranged at the n-type semiconductor region 43 of semiconductor substrate 70 as photoelectric conversion layer.Pass Defeated transistor TR3trsGate portion 46 be connected to transmission gate line TG3.In addition, the 3rd floating diffusion layer FD3It is arranged at semiconductor Substrate 70 is located at transmission transistor TR3trsGate portion 46 near region 46C.It is stored in n-type semiconductor region 43 Electric charge is read out to the 3rd floating diffusion layer FD via the transmission channel 46A formed along gate portion 463。
In the 3rd image-forming component, it is further provided with forming the 3rd imaging in the first surface side of semiconductor substrate 70 The reset transistor TR3 of the control unit of elementrst, amplifying transistor TR3ampWith selection transistor TR3sel。
Reset transistor TR3rstIt is made up of gate portion, channel formation region and regions and source/drain.Reset transistor TR3rstGate portion be connected to reset line RST3, reset transistor TR3rstA regions and source/drain be connected to power supply VDD, And its another regions and source/drain is used as the 3rd floating diffusion layer FD3。
Amplifying transistor TR3ampIt is made up of gate portion, channel formation region and regions and source/drain.Gate portion is connected to Reset transistor TR3rstAnother regions and source/drain (the 3rd floating diffusion layer FD3).In addition, the one of the amplifying transistor Individual regions and source/drain is with forming TR3rstAnother regions and source/drain shared region, and be connected to power supply VDD。
Selection transistor TR3selIt is made up of gate portion, channel formation region and regions and source/drain.Gate portion is connected to Selection line SEL3.In addition, a regions and source/drain of the selection transistor is with forming amplifying transistor TR3ampAnother Regions and source/drain shared region, and its another regions and source/drain is connected to signal wire (DOL Data Output Line) VSL3。
Reset line RST1、RST2And RST3, selection line SEL1、SEL2And SEL3And transmission gate line TG2And TG3It is connected to Form the vertical drive circuit 112 of drive circuit, and signal wire (DOL Data Output Line) VSL1、VSL2And VSL3It is connected to composition The column signal process circuit 113 of drive circuit.
P+ layers 44 are arranged between n-type semiconductor region 43 and the surface 70A of semiconductor substrate 70, dark so as to suppress to occur Electric current.P+ layers 42 are formed between n-type semiconductor region 41 and n-type semiconductor region 43, and the one of n-type semiconductor region 43 Component side surface is surrounded by p+ layers 42.P+ layers 73 are formed in the back side 70B sides of semiconductor substrate 70, are partly being led from p+ layers 73 Formation contact hole portion 61 is formed in part with HfO inside structure base board 702Film 74 and dielectric film 75.In interlayer insulating film 76 In, although omitting its diagram formed with distribution on multiple layers.
HfO2Film 74 is the film with negative fixed charge, by film as preparation, can suppress dark current occur.Note Meaning, except HfO2Outside film, aluminum oxide (Al can be also used2O3) film, zirconium oxide (ZrO2) film, tantalum oxide (Ta2O5) film, titanium oxide (TiO2) film, lanthana (La2O3) film, praseodymium oxide (Pr2O3) film, cerium oxide (CeO2) film, neodymia (Nd2O3) film, Yangization promethium (Pm2O3) film, samarium oxide (Sm2O3) film, europium oxide (Eu2O3) film, gadolinium oxide (Gd2O3) film, terbium oxide (Tb2O3) film, oxidation Dysprosium (Dy2O3) film, holimium oxide (Ho2O3) film, thulium oxide (Tm2O3) film, ytterbium oxide (Yb2O3) film, luteium oxide (Lu2O3) film, oxygen Change yttrium (Y2O3) film, hafnium nitride film, aluminium nitride film, nitrogen oxidation hafnium film or oxynitriding aluminium film.As the film build method of these films, example Such as can be CVD, PVD method and ALD.
Hereinafter, operation of the reference picture 5 to the image-forming component (the first image-forming component) according to embodiment 1 is said It is bright.Here, it is the current potential higher than second electrode by the potential setting of first electrode 11.In other words, for example, working as first electrode 11 be set to positive potential and by the potential setting of second electrode into negative potential when, pass through the photoelectricity carried out in photoelectric conversion layer 15 Electronics is read out to floating diffusion layer by conversion.To carry out similar operations in other examples.Pay attention to, set when by first electrode 11 It is fixed into negative potential and by the potential setting of second electrode into positive potential when, pass through the photoelectricity carried out in photoelectric conversion layer 15 and turn Hole of changing commanders reads out to floating diffusion layer, and can set the level for the current potential hereinafter mentioned on the contrary.
The reference used Fig. 5, Figure 20 of embodiment 4 and Figure 21 is illustrated later, and will be carried out later The description of reference numerals that Figure 32 and Figure 33 of the embodiment 6 of explanation are used is as follows.
PA...... the point PA in the region faced with charge storage electrode 12 of photoelectric conversion layer 15 current potential or photoelectricity turn Change the point PA in the region faced with charge storage electrode section 12C of layer 15 current potential；
PB...... photoelectric conversion layer 15 is practised physiognomy with the region among charge storage electrode 12 and first electrode 11 To the point PB current potential in region, photoelectric conversion layer 15 the region faced with transmission coordination electrode (charge transmission electrode) 13 Point PB current potential or photoelectric conversion layer 15 the region faced with charge storage electrode section 12B point PB current potential；
PC...... the point PC in the region faced with first electrode 11 of photoelectric conversion layer 15 current potential or photoelectric conversion layer The point PC in 15 region faced with charge storage electrode section 12A current potential；
PD...... photoelectric conversion layer 15 with the region among charge storage electrode section 12C and first electrode 11 The point PD in the region faced current potential；
FD...... the first floating diffusion layer FD1Current potential；
VOA...... the current potential of charge storage electrode 12；
VOA-A...... charge storage electrode section 12A current potential；
VOA-B...... charge storage electrode section 12B current potential；
VOA-C...... charge storage electrode section 12C current potential；
VOT...... the current potential of coordination electrode (charge transmission electrode) 13 is transmitted；
RST...... reset transistor TR1rstGate portion 51 current potential；
VDD...... the current potential of power supply；
VSL_1...... signal wire (DOL Data Output Line) VSL1；
TR1_rst...... reset transistor TR1rst；
TR1_amp...... amplifying transistor TR1amp；And
TR1_sel...... selection transistor TR1sel。
During electric charge stores, from drive circuit by current potential V11Apply to first electrode 11, by current potential V12Apply to electric charge Storage electrode 12.By the light being incident on photoelectric conversion layer 15, opto-electronic conversion is carried out in photoelectric conversion layer 15.Pass through photoelectricity The hole of generation is changed via distribution VOUDrive circuit is transferred to from second electrode 16.On the other hand, due to first electrode 11 Potential setting is into the current potential higher than second electrode 16, in other words, for example, being incited somebody to action due to positive potential being applied to first electrode 11 Negative potential applies to second electrode 16, therefore, electric potential relation is set into V12≥V11, it is preferable that V12>V11.Therefore, light is passed through The electronics of electricity conversion generation is attracted by charge storage electrode 12, so as to which what electrons rested on photoelectric conversion layer 15 faces electric charge In the region of storage electrode 12.In other words, electric charge is stored in photoelectric conversion layer 15.Due to V12>V11, in opto-electronic conversion The electronics of the inside of layer 15 generation will not move towards first electrode 11.With the progress of opto-electronic conversion, the face of photoelectric conversion layer 15 More negative value is become to the current potential in the region of charge storage electrode 12.
In the final stage of electric charge storing time intervals, reset operation is carried out.Therefore, the first floating diffusion layer FD1Current potential It is reset, and the first floating diffusion layer FD1Current potential become the current potential V of power supplyDD。
After resetting operation and completing, electric charge reading is carried out.In other words, will from drive circuit during electric charge transmits Current potential V21Apply to first electrode 11, by current potential V22Apply to charge storage electrode 12.Here, it is set to V22<V21.So, stop The electronics in the region of charge storage electrode 12 for staying in photoelectric conversion layer 15 is read out to first electrode 11, and further It is read out to the first floating diffusion layer FD1.In other words, the electric charge being stored in photoelectric conversion layer 15 is read out into control list Member.
Structure including the insulating barrier 82 between charge storage electrode 12 and first electrode 11 can suppress PB current potentials Change.If there is no insulating barrier 82 in the opening position, except the distance between charge storage electrode 12 and first electrode 11 Outside, the different positions at the edge of insulating barrier 82 can also cause the change of PB current potentials.On the contrary, in the He of charge storage electrode 12 Insulating barrier 82 is provided with opening between first electrode 11, enabling pass through charge storage electrode 12 and first electrode 11 The distance between determine the influence of PB current potentials.Therefore, by that can make most including insulating barrier 82 as described above, insulating barrier 82 Small PB current potentials increase, electronics is effectively limited in PA positions by this, and also reduces current leakage.
In a manner of being described above, electric charge storage can be completed, reset the sequence of operations of operation and electric charge transmission.
Electronics is being read out into the first floating diffusion layer FD1Amplifying transistor TR1 afterwardsampWith selection transistor TR1sel Operation it is identical with the operation of above-mentioned transistor of the prior art.In addition, the electricity of the second image-forming component and the 3rd image-forming component The sequence of operations of lotus storage, reset operation and electric charge transmission is similar to electric charge of the prior art storage, reset operation and electricity The sequence of operations of lotus transmission.In addition, being similar to prior art, can be handled by correlated-double-sampling (CDS) to remove first Floating diffusion layer FD1Reset noise.
As described above, in embodiment 1, because there is provided be arranged to separate with first electrode and be arranged to turn in face of photoelectricity The charge storage electrode of layer is changed, and inserted with insulating barrier between charge storage electrode and photoelectric conversion layer, therefore, when using up When irradiating photoelectric conversion unit and opto-electronic conversion is carried out in photoelectric conversion unit, photoelectric conversion layer, insulating barrier and electric charge are deposited Storing up electricity pole forms certain capacitor so that electric charge can be stored in photoelectric conversion layer.Therefore, when starting exposure, by complete Fully- depleted charge storage elements, electric charge can be removed.Therefore, it is possible to suppress the increase of kTC noises, random noise deterioration and imaging When deterioration in image quality these phenomenons appearance.Further, since it can once reset whole pixels, it is possible to which it is so-called to realize Global shutter function.
Fig. 8 shows the concept map of the solid state image pickup device of embodiment 1.The solid state image pickup device 100 of embodiment 1 is constructed Into including：Imaging region 111, wherein cascade type image-forming component 101 is with two-dimensional array arrangements；And such as vertical drive electricity The driving of road 112, column signal process circuit 113, horizontal drive circuit 114, output circuit 115 and drive control circuit 116 etc. Circuit (peripheral circuit).Pay attention to, these circuits can be constructed by known circuit.Obviously, these circuits can also be by using existing There are other circuit structures (for example, for CCD imaging devices or various circuits of CMOS imaging devices) in technology to construct. Pay attention to, in fig. 8, reference " 101 " only denotes a line cascade type image-forming component 101.
Drive control circuit 116 is based on vertical synchronizing signal, horizontal-drive signal and master clock and generates and driven as vertical The clock signal and control signal of the benchmark of the operation of dynamic circuit 112, column signal process circuit 113 and horizontal drive circuit 114. Then, the clock signal of generation or control signal are inputted to vertical drive circuit 112, column signal process circuit 113 and level Drive circuit 114.
Vertical drive circuit 112 is for example made up of shift register, and with behavior unit sequence in vertical direction The optionally cascade type image-forming component 101 in scanning imagery region 111.Then, will be based on according to each cascade type into pixel The reception light quantity of part 101 and the picture element signal (picture signal) of electric current (signal) that generates passes through signal wire (DOL Data Output Line) 117 and VSL is transmitted to column signal process circuit 113.
Column signal process circuit 113 is for example arranged for each row of cascade type image-forming component 101, and according to next From the signal of the black reference pixel of each image-forming component (be not shown, but formed in the periphery of effective pixel area) to from a line layer The picture signal that stack-type image-forming component 101 exports carries out the signal transacting of noise remove or signal amplification etc..Set horizontal Selecting switch (not shown) is to be connected between the output stage of column signal process circuit 113 and horizontal signal lines 118.
Horizontal drive circuit 114 is for example made up of shift register, and by sequentially output level scanning impulse come Column signal process circuit 113 is sequentially selected, by the signal output of column signal process circuit 113 to horizontal signal lines 118.
Output circuit 115 is carried out to the signal sequentially provided from column signal process circuit 113 by horizontal signal lines 118 Signal transacting, and export the signal.
Fig. 9 shows the image-forming component of embodiment 1 and the equivalent circuit diagram of the variation of cascade type image-forming component.Figure 10 shows The first electrode and charge storage electrode of the variation of the image-forming component for the composition embodiment 1 that place goes out and form control unit The schematic layout figure of transistor, reset transistor TR1rstAnother regions and source/drain 51B can be grounded, rather than It is connected to power supply VDD。
For example, the image-forming component of embodiment 1 and cascade type can be manufactured into pixel by the method being described below Part.I.e., first, SOI substrate is prepared.Then, the first silicon layer is formed on the surface of SOI substrate based on epitaxial growth method, and And p+ layers 73 and n types semiconductor regions 41 are formed on the first silicon layer.Then, the second silicon layer is formed based on epitaxial growth method On the first silicon layer, element isolation zone 71, oxide-film 72, p+ layers 42, n-type semiconductor region 43 and p are formed on the second silicon layer + layer 44.In addition, various transistors of control unit for forming image-forming component etc. are formed in the second silicon layer, and in shape thereon Into wiring layer 62, interlayer insulating film 76 and various distributions.Interlayer insulating film 76 and supporting substrate (not shown) is set to be bonded mutually. Afterwards, by removing SOI substrates, expose the first silicon layer.Pay attention to, the surface of the second silicon layer corresponds to semiconductor substrate 70 Surface 70A, the surface of the first silicon layer correspond to the back side 70B of semiconductor substrate 70.In addition, the first silicon layer and the second silicon layer are united Referred to as semiconductor substrate 70.Then, in the back side 70B sides of semiconductor substrate 70, formed for forming opening for contact hole portion 61 Oral area；Form HfO2Film 74, dielectric film 75 and contact hole portion 61；And form welding disk 63 and 64, interlayer insulating film 81, connection Hole 65 and 66, first electrode 11, charge storage electrode 12 and insulating barrier 82.However, connecting portion 67 is formed into opening, and form light Lenticule 90 on electric conversion layer 15, second electrode 16, protective layer 83 and piece.So, the image-forming component and layer of embodiment 1 can be obtained Stack-type image-forming component.
Embodiment 2
Embodiment 2 is the variation of embodiment 1.Figure 11 illustrates the embodiment 2 of schematic partial cross section figure Image-forming component and cascade type image-forming component are preceding illuminated image-forming component and preceding illuminated cascade type image-forming component, and including following three kinds The cascade type structure of image-forming component：To green sensitive and including absorb green light first kind green photoelectric conversion layer implementation The first kind green image-forming component (the first image-forming component) of example 1, to blue-sensitive and include absorb blue light Second Type The Second Type blueness image-forming component (the second image-forming component) of the prior art of blue photoelectric conversion layer and to red sensitive and (the three one-tenth of the Second Type red image-forming component of the prior art of Second Type red photoelectric conversion layer including absorption red light Element).Here, red image-forming component (the 3rd image-forming component) and blue image-forming component (the second image-forming component) are arranged on and partly led In structure base board 70, and the second image-forming component than the 3rd image-forming component closer to light incident side.In addition, green image-forming component ( One image-forming component) it is arranged on above blue image-forming component (the second image-forming component).
Similar to embodiment 1, the various transistors for forming control unit are arranged on the surface 70A sides of semiconductor substrate 70 In.These transistors can be formed as with the essentially identical configuration and structure of those transistors with illustrating in embodiment 1.This Outside, although the second image-forming component and the 3rd image-forming component are arranged in semiconductor substrate 70, these image-forming components can be with shape As with the essentially identical configuration and structure of the second image-forming component with illustrating in embodiment 1 and the 3rd image-forming component.
Interlayer insulating film 77 and 78 is formed on the surface 70A of semiconductor substrate 70, and form embodiment 1 into pixel The photoelectric conversion unit (first electrode 11, photoelectric conversion layer 15 and second electrode 16) of part, charge storage electrode 12 etc. are set On interlayer insulating film 78.
So, in addition to image-forming component and cascade type image-forming component are preceding illuminated, due to embodiment 2 image-forming component and The configuration and structure of cascade type image-forming component can be formed like image-forming component and cascade type image-forming component in embodiment 1 Configuration and structure, therefore description is omitted.
Embodiment 3
Embodiment 3 is the variation of Examples 1 and 2.
Figure 12 illustrates the image-forming component of the embodiment 3 of schematic partial cross section figure and cascade type image-forming component to be Back-illuminated type image-forming component and back-illuminated type cascade type image-forming component, and the image-forming component of the first kind first including embodiment 1 and The cascade type structure of two the second image-forming component of type both image-forming components.In addition, figure 13 illustrates schematic local horizontal The image-forming component of the embodiment 3 of sectional view and cascade type image-forming component are preceding illuminated image-forming component with preceding illuminated cascade type into pixel Part, and the image-forming component of the first kind first including embodiment 1 and the second image-forming component of Second Type both image-forming components Cascade type structure.Here, the first image-forming component absorbs primitive color light, and the second image-forming component absorbs complementary color light.Alternately, One image-forming component absorbs white light, and the second image-forming component absorbs infrared ray.
It is back-illuminated type image-forming component figure 14 illustrates the image-forming component of the embodiment 3 of schematic partial cross section figure, And constructed by the image-forming component of the first kind first of embodiment 1.Alternately, schematic partial cross sectional is shown in Figure 15 A The variation of the image-forming component of the embodiment 3 of face figure is preceding illuminated image-forming component, and is imaged by the first kind first of embodiment 1 Element constructs.Here, the first image-forming component is constructed by following three kinds of image-forming components：Image-forming component, the absorption for absorbing red light are green The image-forming component of coloured light and the image-forming component for absorbing blue light.In addition, the solid-state according to the first embodiment of the present utility model Imaging device is made up of multiple image-forming components.Example that can be using Bayer array as the array of multiple image-forming components.If necessary, will The colour filter that spectrum for carrying out blue light, green light and red light separates is arranged in the light incident side of each image-forming component. In addition, as shown in Figure 15 B- Figure 15 D, insulating barrier 82 may include multilayer.As shown in Figure 15 B- Figure 15 D, insulating barrier 82 may include more Layer 82E and 82F.For example, there may be between charge storage electrode 12 and photoelectric conversion layer 15 of insulating materials 82 One region, the second area between charge storage electrode 12 and first electrode 11 of insulating materials 82 also may be present.At certain In a little embodiments, the second area of insulating materials includes the first insulating barrier 82E containing insulating materials and the containing insulating materials Two insulating barrier 82F, and the first insulating materials 82F is layered on the second insulating materials 82E.Figure 15 B- Figure 15 D are further shown Various constructions about insulating barrier 82 (for example, layer 82E and 82F construction change).
Pay attention to, as the alternative solution for a first kind image-forming component for preparing embodiment 1, two imagings can be laminated Element (that is, is laminated two photoelectric conversion units, and the control list for two image-forming components is prepared in semiconductor substrate Member) or three image-forming components of stacking (that is, three photoelectric conversion units of stacking, and prepared in semiconductor substrate for three The control unit of image-forming component).The stacking knot of first kind image-forming component and Second Type image-forming component is listed in the following table The example of structure.
Form 1
Embodiment 4
Embodiment 4 is the variation of embodiment 1 to 3, and is related to and is transmitted according to having for embodiment of the present utility model Image-forming component of coordination electrode (charge transmission electrode) etc..Figure 16 shows the image-forming component of embodiment 4 and cascade type into pixel The schematic partial cross section figure of a part for part.Figure 17 and Figure 18 shows image-forming component and the cascade type imaging of embodiment 4 The equivalent circuit diagram of element.Figure 19 shows the first electrode, transmission coordination electrode and electric charge for the image-forming component for forming embodiment 4 The schematic layout figure of storage electrode and the transistor of composition control unit.Figure 20 and Figure 21 show embodiment 4 into The figure of the potential state of interior each part during element operates.In addition, Figure 22 shows the of the image-forming component for forming embodiment 4 The schematic layout figure of one electrode, transmission coordination electrode and charge storage electrode.Figure 23 show form embodiment 4 into pixel First electrode, transmission coordination electrode, charge storage electrode, second electrode and the schematic perspective view for contacting hole portion of part.
The image-forming component and cascade type image-forming component of embodiment 4 are configured to further comprise transmitting coordination electrode (electric charge Transmission electrode) 13, transmission coordination electrode 13 be arranged between first electrode 11 and charge storage electrode 12 and with first electrode 11 Separated with charge storage electrode 12, and transmit coordination electrode 13 and be arranged to face photoelectric conversion layer 15 across insulating barrier 82. Transmission coordination electrode 13 passes through the connecting hole 68B, welding disk 68A and distribution V that are arranged in interlayer insulating film 81OTIt is connected to structure Into the pixel-driving circuit of drive circuit.Pay attention to, in order to simplify accompanying drawing, by positioned at the image-forming component of the lower section of interlayer insulating film 81 Various parts are jointly represented by reference 91.
Hereinafter, reference picture 20 and Figure 21 are entered come the operation of the image-forming component (the first image-forming component) to embodiment 4 Row explanation.Pay attention to, especially, be in application to the aspect of the current potential of charge storage electrode 12 and point PB current potential, Figure 20 and Figure 21 It is different.
During electric charge stores, from drive circuit by current potential V11Apply to first electrode 11, by current potential V12Apply to electric charge Storage electrode 12, and by current potential V13Apply to transmission coordination electrode 13.By the light being incident on photoelectric conversion layer 15, in light Opto-electronic conversion is carried out in electric conversion layer 15.The hole generated by opto-electronic conversion is via distribution VOUDrive is transferred to from second electrode 16 Dynamic circuit.On the other hand, because the current potential of first electrode 11 is configured to the current potential higher than second electrode 16, i.e. for example, due to Positive potential is applied to first electrode 11 and applies negative potential to second electrode 16, therefore, electric potential relation is configured to V12 >V13(for example, V12>V11>V13Or V11>V12>V13).Therefore, the electronics generated by opto-electronic conversion is inhaled by charge storage electrode 12 Draw, so as to electrons rest on photoelectric conversion layer 15 in the region of charge storage electrode 12.In other words, electric charge is deposited Storage is in photoelectric conversion layer 15.Due to V12>V13, can reliably prevent the electronics that is generated in photoelectric conversion layer 15 towards the One electrode 11 moves.With the progress of opto-electronic conversion, the current potential in face of the region of charge storage electrode 12 of photoelectric conversion layer 15 It is changed into more negative value.
In the final stage of electric charge storing time intervals, reset operation is carried out.Therefore, the first floating diffusion layer FD1Current potential It is reset, and the first floating diffusion layer FD1Current potential become the current potential V of power supplyDD。
After resetting operation and completing, electric charge reading is carried out.That is, during electric charge transmits, from drive circuit by current potential V21 Apply to first electrode 11, by current potential V22Apply to charge storage electrode 12, and by current potential V23Apply to transmission coordination electrode 13.Here, it is set to V22≤V23≤V21.So, rest on photoelectric conversion layer 15 in the region of charge storage electrode 12 Electronics reliably read out to first electrode 11, and be further read out to the first floating diffusion layer FD1.In other words, deposit The electric charge stored up in photoelectric conversion layer 15 is read out to control unit.
In the way of illustrating before this, electric charge storage can be completed, reset the sequence of operations of operation and electric charge transmission.
Electronics is being read out into the first floating diffusion layer FD1Amplifying transistor TR1 afterwardsampWith selection transistor TR1sel Operation it is identical with the operation of above-mentioned transistor of the prior art.In addition, such as the second image-forming component and the 3rd image-forming component Electric charge storage, reset operation and electric charge transmission sequence of operations be similar to electric charge of the prior art storage, reset operation With the sequence of operations of electric charge transmission.
Figure 24 shows the first electrode and charge storage electrode and structure of the variation for the image-forming component for forming embodiment 4 Into the schematic layout figure of the transistor of control unit, reset transistor TR1rstAnother regions and source/drain 51B can be with Ground connection, rather than it is connected to power supply VDD。
Embodiment 5
Embodiment 5 is the variation of embodiment 1 to 4, and is related to and has electric charge according to embodiment of the present utility model Discharge image-forming component of electrode etc..Figure 25 shows showing for the image-forming component of embodiment 5 and a part for cascade type image-forming component Yi Xing partial cross section views.Figure 26 shows first electrode, charge storage electrode and the electric charge for the image-forming component for forming embodiment 5 Discharge the schematic layout figure of electrode.Figure 27 shows the first electrode for the image-forming component for forming embodiment 5, electric charge storage electricity Pole, electric charge discharge electrode, second electrode and the schematic perspective view for contacting hole portion.
In the image-forming component and cascade type image-forming component of embodiment 5, image-forming component is configured to further comprise electric charge Discharge electrode 14, the electric charge discharge electrode by connecting portion 69 be connected to photoelectric conversion layer 15 and be arranged to first electrode 11 and Charge storage electrode 12 separates.Electric charge discharge electrode 14 is arranged to (changes sentence around first electrode 11 and charge storage electrode 12 Talk about, electric charge discharge electrode is arranged to framework shape).Electric charge discharge electrode 14 is connected to the pixel driver electricity for forming drive circuit Road.Photoelectric conversion layer 15 extends in connecting portion 69.In other words, photoelectric conversion layer 15 in insulating barrier 82 is arranged at Electric charge discharge electrode 14 is extended to connect in two opening portions 85.It is shared (altogether by multiple image-forming components that electric charge discharges electrode 14 With).
In embodiment 5, during electric charge stores, by current potential V11Apply from drive circuit to first electrode 11, by current potential V12Apply to charge storage electrode 12, and by current potential V14Apply to electric charge and discharge electrode 14, so that electric charge is stored in photoelectricity In conversion layer 15.By the light being incident on photoelectric conversion layer 15, opto-electronic conversion is carried out in photoelectric conversion layer 15.Pass through photoelectricity The hole of generation is changed via distribution VOUDrive circuit is transferred to from second electrode 16.On the other hand, due to first electrode 11 Potential setting is into the current potential higher than second electrode 16, in other words, for example, being incited somebody to action due to positive potential being applied to first electrode 11 Negative potential applies to second electrode 16, therefore, electric potential relation is set into V14>V11(for example, V12>V14>V11).Therefore, pass through Opto-electronic conversion generation electronics attracted by charge storage electrode 12, so as to electrons rest on photoelectric conversion layer 15 in face of electricity In the region of lotus storage electrode 12, so that it can be reliably prevented that electronics moves towards first electrode 11.However, do not deposited by electric charge Storing up electricity pole 12 fully attracts or is not stored in the electronics (so-called spilling electronics) in photoelectric conversion layer 15 to be discharged by electric charge Electrode 14 is transferred to drive circuit.
In the final stage of electric charge storing time intervals, reset operation is carried out.Therefore, the first floating diffusion layer FD1Current potential It is reset, and the first floating diffusion layer FD1Current potential become the current potential V of power supplyDD。
After resetting operation and completing, electric charge reading is carried out.In other words, will from drive circuit during electric charge transmits Current potential V21Apply to first electrode 11, by current potential V22Apply to charge storage electrode 12, and by current potential V24Apply to electric charge and discharge Electrode 14.Here, it is set to V24<V21(for example, V24<V22<V21).So, being deposited in face of electric charge for photoelectric conversion layer 15 is rested on Electronics in the region of storing up electricity pole 12 is reliably read out to first electrode 11, and is further read out to the first floating diffusion layer FD1.In other words, the electric charge being stored in photoelectric conversion layer 15 is read out to control unit.
According to mode described above, electric charge storage can be completed, reset the sequence of operations of operation and electric charge transmission.
Electronics is being read out into the first floating diffusion layer FD1Amplifying transistor TR1 afterwardsampWith selection transistor TR1sel Operation it is identical with the operation of this transistor of the prior art.In addition, such as the second image-forming component and the 3rd image-forming component Electric charge storage, reset operation and electric charge transmission sequence of operations be similar to electric charge of the prior art storage, reset operation With the sequence of operations of electric charge transmission.
In embodiment 5, electrode 14 is discharged by electric charge due to the electronics of spilling and is transferred to drive circuit, therefore can be with Suppress the electronics leakage of spilling to the charge storage elements of adjacent pixel, so as to suppress blooming occur (blooming).In addition, therefore, it is possible to improve the imaging performance of image-forming component.
Embodiment 6
Embodiment 6 is the variation of embodiment 1 to 5, and is related to multiple according to having for embodiment of the present utility model Image-forming component of charge storage electrode section etc..
Figure 28 shows the schematic partial cross section figure of a part for the image-forming component of embodiment 6.Figure 29 and Figure 30 figures The image-forming component of embodiment 6 and the equivalent circuit diagram of cascade type image-forming component are shown.Figure 31 shows the imaging for forming embodiment 6 The schematic layout figure of the first electrode and charge storage electrode of element and the transistor of composition control unit.Figure 32 and Figure 33 Show the potential state of interior each part during the operation of the image-forming component of embodiment 6.In addition, Figure 34 shows that composition is implemented The first electrode of example 6 and the schematic layout figure of charge storage electrode.Figure 35 shows the of the image-forming component for forming embodiment 6 One electrode, charge storage electrode, second electrode and the schematic perspective view for contacting hole portion.
In embodiment 6, charge storage electrode 12 is made up of multiple charge storage electrode section 12A, 12B and 12C.Electric charge The quantity of storage electrode section can be two or more, and in embodiment 6, the quantity set is " 3 ".Then, embodiment 6 into In element and cascade type image-forming component, because the current potential of first electrode is higher than the current potential of second electrode 16, i.e. for example, due to Positive potential applies to first electrode 11 and negative potential applies to second electrode 16, during electric charge transmits, applies to being located at from the The current potential of charge storage electrode section 12A at the proximal most position of one electrode 11 is higher than application to positioned at from the highest distance position of first electrode 11 The charge storage electrode section 12C at place current potential.So, charge storage electrode 12 has electric potential gradient so that rests on photoelectricity and turns The electronics in the region of charge storage electrode 12 for changing layer 15 is more reliably read out to first electrode 11, and further by Read out to the first floating diffusion layer FD1.In other words, the electric charge being stored in photoelectric conversion layer 15 is read out to control unit.
In the example shown in Figure 32, during electric charge transmits, because electric potential relation is configured to：Charge storage electrode section 12C current potential<Charge storage electrode section 12B current potential<Charge storage electrode section 12A current potential, therefore rest on opto-electronic conversion Layer 15 region in electron synchrotron when be read out to the first floating diffusion layer FD1.On the other hand, in Figure 33 example, in electricity During lotus is transmitted, it is allowed to charge storage electrode section 12C current potential, charge storage electrode section 12B current potential and charge storage electrode Section 12A current potential is gradually changed and (in other words, changed with stepped or ramped shaped).Therefore, photoelectric conversion layer 15 is rested on What the electronics in charge storage electrode section 12C region can be moved to photoelectric conversion layer 15 faces charge storage electrode section 12B region.Then, the movement of the electronic energy in charge storage electrode section 12B region of photoelectric conversion layer 15 is rested on To photoelectric conversion layer 15 in face of charge storage electrode section 12A region.Then, rest on photoelectric conversion layer 15 faces electric charge Electronics in storage electrode section 12A region is enough reliably read the first floating diffusion layer FD1。
Illustrated in Figure 36 form embodiment 6 image-forming component variation first electrode and charge storage electrode and Form the schematic layout figure of the transistor of control unit, reset transistor TR1rstAnother regions and source/drain 51B can With ground connection, rather than it is connected to power supply VDD。
So far, although being illustrated based on preferred embodiment to the utility model, the utility model is not limited to these Embodiment.The image-forming component that illustrates in embodiment, the structure of cascade type image-forming component and solid state image pickup device, construction, manufacture Condition, manufacture method and the material that uses are exemplary, and therefore, suitably these features can be changed.Except one Outside the form that floating diffusion layer is set for an image-forming component, multiple imagings can also be directed to using a floating diffusion layer The form that element is set.In other words, by suitably controlling electric charge to transmit the sequential of period, multiple image-forming components can be allowed to be total to With a floating diffusion layer.In addition, in this case, multiple image-forming components are also allowed for share a contact hole portion.
As the variation of image-forming component and cascade type image-forming component illustrated in the embodiment 1 shown in Figure 37, first Electrode 11 is configurable to be extended to connect to photoelectric conversion layer 15 in the opening portion 84A for being arranged at insulating barrier 82.
Alternately, Figure 38 illustrates the variation of image-forming component illustrated in embodiment 1 and cascade type image-forming component And Figure 39 A illustrate the schematic amplification partial cross section view of a part for first electrode etc., the top surface side of first electrode 11 Edge is covered with insulating barrier 82；First electrode 11 is exposed to opening portion 84B bottom surface；And work as and insulation is limited by first surface 82a The surface contacted with the top surface of first electrode 11 of layer 82 and insulating barrier 82 is limited by second surface 82b with photoelectric conversion layer 15 In face of the surface of the part contact of charge storage electrode 12 when, opening portion 84B side surface has from first surface 82a The slope extended to second surface 82b.So, due to being provided with slope in opening portion 84B side surface, therefore electric charge can be more suitable Moved from photoelectric conversion layer 15 to first electrode 11 on sharp ground.Pay attention to, in the example shown in Figure 39 A, use opening portion 84B's Axis has rotational symmetry as center, opening portion 84B side surface.However, as shown in Figure 39 B, opening portion 84C can be with It is arranged to having from first surface 82a towards the side surface on the second surface 82b slopes extended for opening portion 84C is located at electricity The side of lotus storage electrode 12.Therefore, it is difficult to from photoelectric conversion layer 15 with the electric charge of the part of 12 opposite side of charge storage electrode Movement is (inserted with opening portion 84C between the part and charge storage electrode).In addition, although opening portion 84B side surface tool There is the slope extended from first surface 82a towards second surface 82b, but as shown in Figure 39 A, opening portion 84B side surface Edge in second surface 82b can be located at the outside at the edge of first electrode 11, or as shown in Figure 39 C, can be located at The inner side at the edge of first electrode 11.By using former structure, electric charge transmission can be more easily carried out；And by adopting Constructed with latter, the property in irregular shape when can reduce to form opening portion.
Opening portion 84B and 84C can be formed as follows：Backflow is being formed out in a insulating layer based on engraving method The etching mask made of anticorrosive additive material formed when oral area, set as the side surface of the opening portion of etching mask Slope, and carry out etching isolation layer 82 using etching mask.
Alternately, as shown in figure 40, electrode 14 is discharged for the electric charge illustrated by embodiment 5, photoelectric conversion layer 15 can Be formed as being extended to connect to electric charge discharge electrode 14 in the second opening portion 85A for being arranged at insulating barrier 82；Electric charge discharge electricity The top edge of pole 14 is covered with insulating barrier 82；Electric charge discharge electrode 14 is exposed to the second opening portion 85A bottom surface；And when by 3rd surface 82c limits the surface contacted with the top surface of electric charge discharge electrode 14 of insulating barrier 82 and limited by second surface 82b When determining the surface contacted in face of a part for charge storage electrode 12 with photoelectric conversion layer 15 of insulating barrier 82, the second opening portion 85A side surface has from the slope that the 3rd surface 82c extends to second surface 82b.
Alternatively, the variation of the image-forming component illustrated by embodiment 1 as shown in figure 41 and cascade type image-forming component, Light is configurable in the incidence of the side of second electrode 16, and light shield layer 92 may be structured to form the light incidence in second electrode 16 Side.Pay attention to, be arranged to may be used as light shield layer than the various distributions of photoelectric conversion layer closer to light incident side.
Pay attention to, in the example shown in Figure 41, although light shield layer 92 is formed above second electrode 16, in other words, to the greatest extent Pipe light shield layer 92 is formed on the top of first electrode 11 as the light incident side of second electrode 16, still, as shown in figure 42, hides Photosphere may be arranged on the surface of the light incident side of second electrode 16.In addition, in some cases, as shown in figure 43, light shield layer 92 may be formed in second electrode 16.
Alternately, the structure that light is incident on from the side incidence of second electrode 16 without light in first electrode 11 can be set. Specifically, as shown in figure 41, light shield layer 92 forms the light incident side as second electrode 16 above first electrode 11.It is alternative Ground, as shown in figure 45, lenticule 90 is arranged on the structure of charge storage electrode 12 and the top of second electrode 16 on settable piece, and And the light being incident on piece on lenticule 90 is collected in charge storage electrode 12, so as to which light can not reach first electrode 11. Pay attention to, as illustrated by embodiment 4, in the case where being provided with transmission coordination electrode 13, can realize that light is not incident to the first electricity Pole 11 and the form of transmission coordination electrode 13.Specifically, as shown in figure 44, light shield layer 92 can be set to be formed in the He of first electrode 11 Transmit the form of the top of coordination electrode 13.Alternately, the light being incident on piece on lenticule 90 can be set and do not reach the first electricity Pole 11 and the structure of transmission coordination electrode 13.
By using above-mentioned configuration and structure, alternately, light shield layer 92 is set, light is only incident on photoelectric conversion layer 15 On the part of the top of charge storage electrode 12, or alternately, lenticule 90 on piece is designed, due to photoelectric conversion layer Do not play opto-electronic conversion in 15 part of (or first electrode 11 and the top of transmission coordination electrode 13) above first electrode 11 Effect, therefore can more reliably simultaneously reset whole pixels, so as to more easily realize global shutter function.That is, In the driving method of the solid state image pickup device including multiple image-forming components with above-mentioned configuration and structure, following locate is repeated Reason：
In all image-forming components, electric charge is stored in photoelectric conversion layer 15 simultaneously, and the electric charge of first electrode 11 It is discharged to outside；In all image-forming components, the electric charge being stored in photoelectric conversion layer 15 is simultaneously transmitted to first electrode 11；And the electric charge for the first electrode 11 that after the transfer is complete, will be transmitted in each image-forming component is sequentially read out.
Photoelectric conversion layer is not limited to the construction that photoelectric conversion layer is one layer.For example, the institute of embodiment 1 as shown in Figure 46 A The image-forming component of explanation and the variation of cascade type image-forming component, photoelectric conversion layer 15 are configurable to have such as lower semiconductor Layer 15A and upper semiconductor layer 15B layer stacked structure, wherein lower semiconductor layer are made up of IGZO, and upper semiconductor layer is by forming reality The material for applying the photoelectric conversion layer 15 illustrated in example 1 is made.So, by setting lower semiconductor layer 15A, it can prevent electric charge from depositing Coupled again in during storage, so as to improve the electric charge being stored in photoelectric conversion layer 15 to the efficiency of transmission of first electrode 11, And it can suppress dark current occur.In addition, the variation as embodiment 4, as shown in figure 47, can be near the first electricity The charge storage electrode 12 that is positioned against of pole 11 sets multiple transmission coordination electrodes.Pay attention to, Figure 47, which is shown, is provided with two biographies Defeated coordination electrode 13A and 13B example.
As shown in Figure 46 B- Figure 46 D, insulating barrier 82 may include multilayer 82E and 82F.For example, there may be insulating materials 82 The first area between charge storage electrode 12 and photoelectric conversion layer 15, insulating materials 82 also may be present is located at electric charge Second area between storage electrode 12 and first electrode 11.In certain embodiments, the second area of insulating materials includes The first insulating barrier 82E containing insulating materials and the second insulating barrier 82F containing insulating materials, and the first insulating materials 82F is laminated On the second insulating materials 82E.Figure 46 B- Figure 46 D further illustrate the various constructions about insulating barrier 82 (for example, layer 82E Changed with 82F construction).
Various variations of repairing described above can be suitably applied to embodiment 1 or other embodiments.
In embodiment, although it is signal charge by electronic settings, and the photoelectricity that will be formed in semiconductor substrate turns The conduction type for changing layer is set as n-type, but the utility model can also be applied to by hole be set as the solid-state of signal charge into As device.In this case, each semiconductor regions are constructed with the semiconductor regions of films of opposite conductivity, and And the conduction type of the photoelectric conversion layer formed in semiconductor substrate can be p-type.
In addition, in embodiment, although illustrating in the description applied to detection according to the incident light as physical quantity The situation for the CMOS-type solid state image pickup device that the unit pixel of the signal charge of amount is arranged with matrix shape, but the utility model It is not limited to apply to CMOS-type solid state image pickup device, and can applies to CCD type solid state image pickup device.In latter event Under, signal charge is transmitted in vertical direction by the vertical transfer register with CCD type structure, and signal charge passes through Horizontal transport register transmits to be exaggerated in the horizontal direction, so as to output pixel signal (picture signal).In addition, this practicality The new wherein pixel that is not limited to is formed with two-dimensional matrix shape and arranges column signal process circuit for each pixel column Overall row type solid state image pickup device.In addition, in some cases, selection transistor can be omitted.
In addition, image-forming component of the present utility model and cascade type image-forming component are not limited to the incidence applied to visible ray is detected So that the distribution to be imaged as to the solid state image pickup device of image, image-forming component and cascade type of the present utility model are imaged for the distribution of light quantity Element applies also for the distribution of the amount of incident of infrared ray, X ray, particle etc. being imaged as the solid state image pickup device of image.This Outside, in a broad sense, image-forming component and cascade type image-forming component of the present utility model can be applied to fingerprint detection sensor etc. The distribution of other physical quantitys of detection pressure or electrostatic capacitance etc. with by it is described be distributed be imaged as the overall solid-state of image into As device (physical quantity distribution detecting device).
In addition, the utility model is not limited to the unit pixel in scanning imagery region with from unit picture with behavior unit sequence Element reads the solid state image pickup device of picture element signal.The utility model can be applied in units of pixel and arbitrarily select pixel and with picture Element reads the X-Y address type solid state image pickup devices of picture element signal for unit from selected pixel.Solid state image pickup device can be formed For a chip, or solid state image pickup device can be formed as the modular form with imaging function, wherein, imaging region, drive Dynamic circuit or optical system are encapsulated jointly.
In addition, the utility model, which is not limited to apply to solid state image pickup device, the utility model, can be applied to imaging device.This In, imaging device represents the camera arrangement of digital camera or DV etc. or such as movement with imaging function The electronic equipment of phone etc..In some cases, the utility model may be implemented as installing module on an electronic device Form, i.e. camera model.
Figure 48 concept map is shown by the solid-state of image-forming component of the present utility model or cascade type image-forming component construction Imaging device 201 is used for the example of electronic equipment (camera).Electronic equipment 200 includes solid state image pickup device 201, optical lens Mirror 210, shutter device 211, drive circuit 212 and signal processing circuit 213.Optical lens 210 is by the figure from subject As the image of light (incident light) is formed at the image space of solid state image pickup device 201.Therefore, signal charge is in solid-state imaging device A period of time is stored in putting 201.Shutter device 211 controls the light irradiation period and shading period of solid state image pickup device 201.Driving Circuit 212 provides the driving letter for controlling the transmission operation of solid state image pickup device 201 and the shutter operation of shutter device 211 Number.The transmission of the signal of solid state image pickup device 201 is carried out according to the drive signal (clock signal) provided from drive circuit 212. Signal processing circuit 213 carries out various signal transactings.Depositing for memory etc. is stored in by the picture signal of signal transacting Store up in medium or export to monitor.In electronic equipment 200, due to improving the Pixel Dimensions of solid state image pickup device 201 And efficiency of transmission, therefore the electronic equipment 200 that pixel characteristic is improved can be obtained.Solid state image pickup device 201 can be applied Electronic equipment 200 be not limited to camera, and electronic equipment can apply to the imaging device of digital camera etc. or be used for The camera model of the mobile device of mobile phone etc..
It will be appreciated by those skilled in the art that according to design requirement and other factorses, can carry out various modifications, combination, Sub-portfolio and change, as long as they are in the range of appended claims or its equivalent.
In addition, for example, this technology can have be constructed as below.
(1) a kind of imaging device, the imaging device include：
Substrate, the substrate include the first photoelectric conversion unit；And second photoelectric conversion unit, second photoelectricity turn The light incident side that unit is in the substrate is changed, second photoelectric conversion unit includes：Photoelectric conversion layer, first electrode, position Second electrode, the 3rd electrode above photoelectric conversion layer and between the 3rd electrode and the photoelectric conversion layer Insulating materials, wherein, a part for the insulating materials is between the first electrode and the 3rd electrode.
(2) imaging device according to more than described in (1), further comprises：The insulating materials is located at the described 3rd electricity First area between pole and the photoelectric conversion layer；And the insulating materials is located at the 3rd electrode and described first Second area between electrode, wherein, the second area of the insulating materials includes first containing the insulating materials Insulating barrier and the second insulating barrier containing the insulating materials, and the first insulating materials is layered on the second insulating materials.
(3) imaging device according to more than described in (2), wherein, one of first insulating barrier in the second area Part is between the first electrode and the photoelectric conversion layer.
(4) imaging device according to more than described in (3), wherein, the first area and the second area include containing The insulating barrier of the varying number of the insulating materials.
(5) imaging device according to more than described in any one of (1) to (4), further comprises：Coordination electrode is transmitted, it is described Coordination electrode is transmitted between the first electrode and the 3rd electrode.
(6) imaging device according to more than described in (5), wherein, during charge storage operation, apply to the transmission control Current potential of the current potential of electrode processed less than application to the 3rd electrode.
(7) imaging device according to more than described in any one of (5) to (6), wherein, the substrate includes the 3rd opto-electronic conversion Unit, and first photoelectric conversion unit, second photoelectric conversion unit and the 3rd photoelectric conversion unit difference It is connected to single signal wire.
(8) imaging device according to more than described in any one of (1) to (7), further comprises：Electric charge discharges electrode, described Electric charge discharges electrode and the first electrode and the 3rd electrode separation, and the photoelectric conversion layer is discharged with the electric charge Electrode contacts.
(9) imaging device according to more than described in (8), wherein, the electric charge discharge electrode around the first electrode and 3rd electrode.
(10) imaging device according to more than described in any one of (1) to (9), further comprises：Multiple 3rd electrode sections.
(11) imaging device according to more than described in (10), wherein, apply to being located most closely to the first electrode position The current potential of 3rd electrode section at place is higher than application to the 3rd electrode for being located furthest from the first electrode opening position The current potential of section.
(12) imaging device according to more than described in any one of (1) to (11), wherein, the photoelectric conversion layer includes stacking Rotating fields, the layer stacked structure include lower semiconductor layer and upper semiconductor layer.
(13) imaging device according to more than described in (12), wherein, the lower half above the 3rd electrode is led The material composition of body layer is different from the material composition of the lower semiconductor layer above the first electrode.
(14) imaging device according to more than described in any one of (12) to (13), wherein, the lower semiconductor layer includes containing Indium oxide.
(15) imaging device according to more than described in any one of (1) to (14), wherein, during electric charge stores, apply extremely The current potential of 3rd electrode, which is more than, to be applied to the current potential of the first electrode.
(16) imaging device according to more than described in any one of (1) to (15), wherein, at least one of the insulating materials Side on the first electrode is put in distribution.
(17) imaging device according to more than described in (16), wherein, with the first electrode and the 3rd electrode it Between distance reduce, the thickness of the insulating materials between the upper surface of the first electrode and the photoelectric conversion layer is in institute State the 3rd electrode side increase of first electrode.
(18) imaging device according to more than described in any one of (1) to (17), wherein, the imaging device be back-illuminated type into As device.
(19) a kind of electronic equipment, the electronic equipment include：Imaging device, the imaging device include：Substrate, it is described Substrate includes the first photoelectric conversion unit；And second photoelectric conversion unit, second photoelectric conversion unit are in the base The light incident side of plate, second photoelectric conversion unit include：Photoelectric conversion layer, first electrode, above photoelectric conversion layer Second electrode, the 3rd electrode and the insulating materials between the 3rd electrode and the photoelectric conversion layer, wherein, institute A part for insulating materials is stated between the first electrode and the 3rd electrode；Lens, the lens are configured to It light be directed on the surface of the imaging device；And circuit, the circuit are configured to control and filled from the imaging The output signal put.
(20) a kind of method for driving imaging device, the described method comprises the following steps：During charging, by the first current potential Apply to charge storage electrode；During charging, the second current potential is applied to first electrode, wherein, first TV university is in institute State the second current potential；During electric charge transmits, the 3rd current potential is applied to the charge storage electrode；And transmitted in the electric charge Period, the 4th current potential is applied to the first electrode, wherein, the 4th current potential is more than the 3rd current potential, and
The imaging device includes：Substrate, the substrate include the first photoelectric conversion unit；And the second opto-electronic conversion list Member, second photoelectric conversion unit are in the light incident side of the substrate, and second photoelectric conversion unit includes：Photoelectricity turns Change layer, first electrode, the second electrode above the photoelectric conversion layer, charge storage electrode and deposited positioned at the electric charge Insulating materials between storing up electricity pole and the photoelectric conversion layer, wherein, a part for the insulating materials is positioned at the described first electricity Between pole and the charge storage electrode.
(A01) image-forming component
A kind of image-forming component, the image-forming component include：
By being laminated first electrode, photoelectric conversion layer and second electrode the photoelectric conversion unit that forms,
Wherein, the photoelectric conversion unit further comprises charge storage electrode, and the charge storage electrode is arranged to Separated with the first electrode, and be arranged to face the photoelectric conversion layer across insulating barrier.
(A02)
According to the image-forming component described in (A01), further comprise：Semiconductor substrate, wherein, the photoelectric conversion unit cloth Put above the semiconductor substrate.
(A03)
According to the image-forming component described in (A01) or (A02), wherein, the first electrode is being arranged at the insulating barrier The photoelectric conversion layer is extended to connect in opening portion.
(A04)
According to the image-forming component described in (A01) or (A02), wherein, the photoelectric conversion layer is being arranged at the insulating barrier Opening portion in be extended to connect to the first electrode.
(A05)
According to the image-forming component described in (A04), wherein,
The edge of the top surface of the first electrode is covered by the insulating barrier, and the first electrode is exposed to the opening portion Bottom surface, and when by first surface limit the insulating barrier the surface contacted with the top surface of the first electrode and by Second surface limits contacting with the part in face of the charge storage electrode of the photoelectric conversion layer for the insulating barrier During surface, the side surface of the opening portion has the slope extended from the first surface to the second surface.
(A06)
According to the image-forming component described in (A05), wherein,
The side table with the slope extended from the first surface to the second surface of the opening portion Face is located at charge storage electrode side.
(A07) to the control of first electrode and the current potential of charge storage electrode
According to the image-forming component described in any one of (A01) to (A06), further comprise：Control unit, described control unit It is arranged at semiconductor substrate and including drive circuit, wherein, the first electrode and the charge storage electrode are connected to described Drive circuit,
During electric charge stores, from drive circuit by current potential V11Apply to the first electrode, by current potential V12Apply to institute Charge storage electrode is stated, so that electric charge is stored in the photoelectric conversion layer, and
During electric charge transmits, from drive circuit by current potential V21Apply to the first electrode, by current potential V22Apply to institute Charge storage electrode is stated, so that the electric charge being stored in the photoelectric conversion layer is read out to the control by the first electrode Unit processed,
In the case of current potential of the current potential of the first electrode higher than the second electrode, V12≥V11And V22<V21, In the case of current potential of the current potential of the first electrode less than the second electrode, V12≤V11And V22>V21。
(A08) coordination electrode is transmitted
According to the image-forming component described in any one of (A01) to (A06), further comprise：Defeated coordination electrode, the transmission control Electrode processed is arranged between the first electrode and the charge storage electrode and stored with the first electrode and the electric charge Electrode separation, and be arranged to face the photoelectric conversion layer across the insulating barrier.
(A09) first electrode, charge storage electrode and the control of Electric potentials for transmitting coordination electrode
According to the image-forming component described in (A08), further comprise：Control unit, described control unit are arranged at semiconductor Substrate and including drive circuit, wherein, the first electrode, the charge storage electrode and the transmission coordination electrode connect The drive circuit is connected to,
During electric charge stores, from the drive circuit by current potential V11Apply to the first electrode, by current potential V12Apply To the charge storage electrode, by current potential V13Apply to the transmission coordination electrode, so that electric charge is stored in the photoelectricity and turned Change in layer, and
During electric charge transmits, from the drive circuit by current potential V21Apply to the first electrode, by current potential V22Apply To the charge storage electrode, by current potential V23Apply to the transmission coordination electrode, so as to be stored in the photoelectric conversion layer Electric charge described control unit is read out to by the first electrode,
In the case of current potential of the current potential of the first electrode higher than the second electrode, V12>V13And V22≤V23≤ V21, and
In the case of current potential of the current potential of the first electrode less than the second electrode, V12<V13And V22≥V23≥ V21。
(A10) electric charge discharge electrode
According to the image-forming component described in any one of (A01) to (A09), further comprise：Electric charge discharges electrode, the electric charge Discharge electrode is connected to the photoelectric conversion layer and is arranged to separate with the first electrode and the charge storage electrode.
(A11)
According to the image-forming component described in (A10), wherein, the electric charge discharge electrode is arranged to around the first electrode With the charge storage electrode.
(A12)
According to the image-forming component described in (A10) or (A11), wherein,
The photoelectric conversion layer is extended to connect to the electric charge row in the second opening portion for being arranged at the insulating barrier Go out electrode,
The edges cover of the top surface of the electric charge discharge electrode has the insulating barrier,
The electric charge discharge electrode is exposed to the bottom surface of second opening portion, and
When limiting the insulating barrier by the 3rd surface surface that the top surface of electrode contacts is discharged with the electric charge and by the Two surfaces limit the table contacted with the part for facing the charge storage electrode of the photoelectric conversion layer of the insulating barrier During face, the side surface of second opening portion has the slope extended from the 3rd surface to the second surface.
(A13) control of Electric potentials of first electrode, charge storage electrode and electric charge discharge electrode
According to the image-forming component described in any one of (A10) to (A12), further comprise：Control unit, described control unit It is arranged at semiconductor substrate and including drive circuit, wherein, the first electrode, the charge storage electrode and the electricity Lotus discharge electrode is connected to the drive circuit,
During electric charge stores, from the drive circuit by current potential V11Apply to the first electrode, by current potential V12Apply To the charge storage electrode, by current potential V14Apply to the electric charge and discharge electrode, so that electric charge is stored in the photoelectricity and turned Change in layer,
During electric charge transmits, from the drive circuit by current potential V21Apply to the first electrode, by current potential V22Apply To the charge storage electrode, by current potential V24Apply to the electric charge and discharge electrode, so as to be stored in the photoelectric conversion layer Electric charge described control unit is read out to by the first electrode,
In the case of current potential of the current potential of the first electrode higher than the second electrode, V14>V11And V24<V21, and
In the case of current potential of the current potential of the first electrode less than the second electrode, V14<V11And V24>V21。
(A14) charge storage electrode section
According to the image-forming component described in any one of (A01) to (A13), wherein, the charge storage electrode is by multiple electric charges Storage electrode section is formed.
(A15)
According to the image-forming component described in (A14), wherein, it is higher than the electricity of the second electrode in the current potential of the first electrode In the case of position, during electric charge transmits, apply to the electric charge for the opening position for being located most closely to the first electrode and store Electricity of the current potential of electrode section higher than the charge storage electrode section of application to the opening position for being located furthest from the first electrode Position, and in the case of current potential of the current potential of the first electrode less than the second electrode, during electric charge transmits, apply Current potential to the charge storage electrode section for the opening position for being located most closely to the first electrode is farthest to being located at less than applying From the current potential of the charge storage electrode section of the opening position of the first electrode.
(B01)
According to the image-forming component described in any one of (A01) to (A15),
Wherein, at least floating diffusion layer and the amplifying transistor of composition control unit is arranged at semiconductor substrate, and
The first electrode is connected to the gate portion of the floating diffusion layer and the amplifying transistor.
(B02)
According to the image-forming component described in (B01),
Wherein, the reset transistor and selection transistor for forming described control unit are arranged at semiconductor substrate,
The floating diffusion layer is connected to a regions and source/drain of the reset transistor,
One regions and source/drain of the amplifying transistor is connected to a source/drain of the selection transistor Region, and
Another regions and source/drain of the selection transistor is connected to signal wire.
(B03)
According to the image-forming component described in any one of (A01) to (B02), wherein, the charge storage electrode is than described first Electrode is big.
(B04)
According to the image-forming component described in any one of (A01) to (B03), wherein, light is incident from second electrode side, and shading Layer is formed at the light incident side of the second electrode.
(B05)
According to the image-forming component described in any one of (A01) to (B03), wherein, light is incident from second electrode side, and light is not Incidence is on the first electrode.
(B06)
According to the image-forming component described in (B05), wherein, light shield layer forms side on the first electrode and is used as described second The light incident side of electrode.
(B07)
According to the image-forming component described in (B05), wherein, set above the charge storage electrode and the second electrode There is lenticule on piece, and
Incident light on lenticule on said sheets is collected in the charge storage electrode.
(C01) cascade type image-forming component
One kind includes the cascade type image-forming component of the image-forming component described in any one of at least one basis (A01) to (B07).
(D01) the first embodiment of solid state image pickup device
One kind includes the solid state image pickup device of the image-forming component described in any one of multiple bases (A01) to (B04).
(D02) the second embodiment of solid state image pickup device
One kind includes the solid state image pickup device of the cascade type image-forming component described in multiple bases (C01).
(E01) driving method of solid state image pickup device
A kind of driving method of solid state image pickup device, the solid state image pickup device has multiple image-forming components, the multiple Image-forming component has following structure, wherein：
Include by being laminated first electrode, photoelectric conversion layer and second electrode the photoelectric conversion unit that forms,
The photoelectric conversion unit further comprises：Charge storage electrode, the charge storage electrode be arranged to it is described First electrode separates and is arranged to face the photoelectric conversion layer across insulating barrier, and
Light is incident from second electrode side, and light is not incident on the first electrode, and the driving method includes following heavy Multiple step：
In all image-forming components, electric charge is stored in the photoelectric conversion layer simultaneously, and by the first electrode Electric charge be expelled to outside；
In all image-forming components, by the electric charge simultaneous transmission being stored in the photoelectric conversion layer to the described first electricity Pole；And
After the transfer is complete, the electric charge for being transferred to the first electrode is read sequentially in each image-forming component.
The cross reference of related application
This application claims in the Japanese Priority Patent Application JP 2016- submitted to Japan Office on the 30th of September in 2016 193919 rights and interests, the full content of the priority application is hereby incorporated herein by herein.
Reference numerals list
11 first electrodes
12 charge storage electrodes
12A, 12B, 12C charge storage electrode section
13rd, 13A, 13B transmit coordination electrode (charge transmission electrode)
14 electric charges discharge electrode
15 photoelectric conversion layers
16 second electrodes
41 form the n-type semiconductor region of the second image-forming component
43 form the n-type semiconductor region of the 3rd image-forming component
42nd, 44,73 p+ layers
FD1、FD21、FD3, 45C, 46C floating diffusion layer
TR1ampAmplifying transistor
TR1rstReset transistor
TR1selSelection transistor
51 reset transistor TR1rstGate portion
51A reset transistors TR1rstChannel formation region
51B, 51C reset transistor TR1rstRegions and source/drain
52 amplifying transistor TR1ampGate portion
52A amplifying transistors TR1ampChannel formation region
52B, 52C amplifying transistor TR1ampRegions and source/drain
53 selection transistor TR1selGate portion
53A selection transistors TR1selChannel formation region
53B, 53C selection transistor TR1selRegions and source/drain
TR2trsTransmission transistor
The gate portion of 45 transmission transistors
TR2rstReset transistor
TR2ampAmplifying transistor
TR2selSelection transistor
TR3trsTransmission transistor
The gate portion of 46 transmission transistors
TR3rstReset transistor
TR3ampAmplifying transistor
TR3selSelection transistor
VDDPower supply
RST1、RST2、RST3Reset line
SEL1、SEL2、SEL3Selection line
117、VSL1、VSL2、VSL3Signal wire
TG2、TG3Transmit gate line
VOA、VOT、VOUDistribution
61 contact hole portions
62 wiring layers
63rd, 64,68A welding disks
65th, 68B connecting holes
66th, 67,69 connecting portion
70 semiconductor substrates
70A first surfaces (preceding surface) semiconductor substrate
70B second surfaces (back side) semiconductor substrate
71 element isolation zones
72 oxide-films
74 HfO2Film
75 dielectric films
76 interlayer insulating films
77th, 78,81 interlayer insulating film
82 insulating barriers
The first surface of 82a insulating barriers
The second surface of 82b insulating barriers
3rd surface of 82c insulating barriers
83 protective layers
84th, 84A, 84B, 84C opening portion
85th, the opening portions of 85A second
90 upper lenticules
91 image-forming components are located at the various parts of the lower section of interlayer insulating film 81
92 light shield layers
100 solid state image pickup devices
101 cascade type image-forming components
111 imaging regions
112 vertical drive circuits
113 column signal process circuits
114 horizontal drive circuits
115 output circuits
116 drive control circuits
118 horizontal signal lines
200 electronic equipments (camera)
201 solid state image pickup devices
210 optical lenses
211 shutter devices
212 drive circuits
213 signal processing circuits

Claims (19)

1. a kind of image-forming component, the image-forming component includes：
Substrate, the substrate have the first photoelectric conversion unit；And
Second photoelectric conversion unit, second photoelectric conversion unit are located at the light incident side of the substrate, second photoelectricity Converting unit includes：
Photoelectric conversion layer；
First electrode；
Second electrode above the photoelectric conversion layer；
3rd electrode；And
Insulating materials between the 3rd electrode and the photoelectric conversion layer,
Characterized in that,
A part for the insulating materials is between the first electrode and the 3rd electrode.
2. image-forming component according to claim 1, further comprises：
The first area between the 3rd electrode and the photoelectric conversion layer of the insulating materials；And
The second area between the 3rd electrode and the first electrode of the insulating materials,
Characterized in that,
The second area of the insulating materials includes the first insulating barrier containing the insulating materials and contains the insulation Second insulating barrier of material, and first insulating materials is layered on second insulating materials.
3. image-forming component according to claim 2, it is characterised in that first insulating barrier in the second area A part is between the first electrode and the photoelectric conversion layer.
4. image-forming component according to claim 2, it is characterised in that the first area and the second area include containing There is the insulating barrier of the varying number of the insulating materials.
5. image-forming component according to claim 1, it is characterised in that further comprise：
Coordination electrode is transmitted, the transmission coordination electrode is between the first electrode and the 3rd electrode.
6. image-forming component according to claim 5, it is characterised in that
During charge storage operation, apply to the current potential of the transmission coordination electrode electricity less than application to the 3rd electrode Position.
7. image-forming component according to claim 5, it is characterised in that the substrate includes the 3rd photoelectric conversion unit, and And first photoelectric conversion unit, second photoelectric conversion unit and the 3rd photoelectric conversion unit are respectively connecting to list Only signal wire.
8. image-forming component according to claim 1, it is characterised in that further comprise：
Electric charge discharges electrode, the electric charge discharge electrode and the first electrode and the 3rd electrode separation, and the light Electric conversion layer contacts with electric charge discharge electrode.
9. image-forming component according to claim 8, it is characterised in that the electric charge discharge electrode surrounds the first electrode With the 3rd electrode.
10. image-forming component according to claim 1, it is characterised in that further comprise multiple 3rd electrode sections.
11. image-forming component according to claim 10, it is characterised in that apply to being located most closely to the first electrode position The current potential of 3rd electrode section at the place of putting is electric to be located furthest from the first electrode opening position the described 3rd higher than applying The current potential of pole section.
12. image-forming component according to claim 1, it is characterised in that the photoelectric conversion layer includes layer stacked structure, institute Stating layer stacked structure includes lower semiconductor layer and upper semiconductor layer.
13. image-forming component according to claim 12, it is characterised in that the lower half above the 3rd electrode The material composition of conductor layer is different from the material composition of the lower semiconductor layer above the first electrode.
14. image-forming component according to claim 12, it is characterised in that the lower semiconductor layer includes containing indium oxide.
15. image-forming component according to claim 1, it is characterised in that during electric charge stores, apply to the described 3rd electricity Current potential of the current potential of pole higher than application to the first electrode.
16. image-forming component according to claim 1, it is characterised in that at least a portion of the insulating materials is arranged in Above the first electrode.
17. image-forming component according to claim 16, it is characterised in that with the first electrode and the 3rd electrode The distance between reduce, the thickness of the insulating materials between the upper surface of the first electrode and the photoelectric conversion layer Spend and increase in the 3rd electrode side of the first electrode.
18. image-forming component according to claim 1, it is characterised in that the image-forming component is back-illuminated type image-forming component.
19. a kind of electronic equipment, it is characterised in that the electronic equipment includes：
Image-forming component, the image-forming component are the image-forming components as any one of claim 1 to 18；
Lens, the lens are configured to light be directed on the surface of the image-forming component；And
Circuit, the circuit are configured to control the output signal from the image-forming component.
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